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Paolo Magnone
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2020 – today
- 2023
- [i1]Massimo Vatalaro, H. Neill, F. Gity, Paolo Magnone, V. Maccaronio, C. Márquez, J. C. Galdon, F. Gamiz, Felice Crupi, P. Hurley, Raffaele De Rose:
Experimental analysis of variability in WS2-based devices for hardware security. CoRR abs/2308.02265 (2023) - 2020
- [j11]Mohammad Mohammadi, Afshin Mirzaee, Paolo Magnone, Javad Shokrollahi Moghani, Paolo Mattavelli:
Performance improvement of pulse width-amplitude modulation-based quasi-Z-source inverters: Analysis and implementation. Int. J. Circuit Theory Appl. 48(10): 1786-1799 (2020) - [j10]Guangyuan Liu, Tommaso Caldognetto, Paolo Mattavelli, Paolo Magnone:
Suppression of Second-Order Harmonic Current for Droop-Controlled Distributed Energy Resource Converters in DC Microgrids. IEEE Trans. Ind. Electron. 67(1): 358-368 (2020)
2010 – 2019
- 2018
- [j9]Paolo Magnone, Giacomo Barletta, A. Magrì:
Investigation of degradation mechanisms in low-voltage p-channel power MOSFETs under High Temperature Gate Bias stress. Microelectron. Reliab. 88-90: 438-442 (2018) - [c3]Guangyuan Liu, Aram Khodamoradi, Paolo Mattavelli, Tommaso Caldognetto, Paolo Magnone:
Plug and Play DC-DC Converters for Smart DC Nanogrids with Advanced Control Ancillary Services. CAMAD 2018: 1-6 - 2017
- [j8]Andrea Natale Tallarico, Susanna Reggiani, Paolo Magnone, Giuseppe Croce, Riccardo Depetro, P. Gattari, Enrico Sangiorgi, Claudio Fiegna:
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide. Microelectron. Reliab. 76-77: 475-479 (2017) - 2012
- [j7]Raffaele De Rose, Antonio Malomo, Paolo Magnone, Felice Crupi, Giorgio Cellere, Marco Martire, Diego Tonini, Enrico Sangiorgi:
A methodology to account for the finger interruptions in solar cell performance. Microelectron. Reliab. 52(9-10): 2500-2503 (2012) - [j6]Felice Crupi, Massimo Alioto, Jacopo Franco, Paolo Magnone, Mitsuhiro Togo, N. Horiguchi, Guido Groeseneken:
Understanding the Basic Advantages of Bulk FinFETs for Sub- and Near-Threshold Logic Circuits From Device Measurements. IEEE Trans. Circuits Syst. II Express Briefs 59-II(7): 439-442 (2012) - [j5]Felice Crupi, Massimo Alioto, Jacopo Franco, Paolo Magnone, Ben Kaczer, Guido Groeseneken, Jérôme Mitard, Liesbeth Witters, Thomas Y. Hoffmann:
Buried Silicon-Germanium pMOSFETs: Experimental Analysis in VLSI Logic Circuits Under Aggressive Voltage Scaling. IEEE Trans. Very Large Scale Integr. Syst. 20(8): 1487-1495 (2012) - 2011
- [j4]Paolo Magnone, Felice Crupi, Massimo Alioto, Ben Kaczer, Brice De Jaeger:
Understanding the Potential and the Limits of Germanium pMOSFETs for VLSI Circuits From Experimental Measurements. IEEE Trans. Very Large Scale Integr. Syst. 19(9): 1569-1582 (2011) - [c2]Felice Crupi, Massimo Alioto, Jacopo Franco, Paolo Magnone, Ben Kaczer, Guido Groeseneken, Jérôme Mitard, Liesbeth Witters, Thomas Y. Hoffmann:
Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling. ISCAS 2011: 2249-2252 - 2010
- [c1]Paolo Magnone, Felice Crupi, Massimo Alioto, Ben Kaczer:
Experimental study of leakage-delay trade-off in Germanium pMOSFETs for logic circuits. ISCAS 2010: 1699-1702
2000 – 2009
- 2009
- [j3]Gino Giusi, Felice Crupi, Calogero Pace, Paolo Magnone:
Full Model and Characterization of Noise in Operational Amplifier. IEEE Trans. Circuits Syst. I Regul. Pap. 56-I(1): 97-102 (2009) - 2007
- [j2]Paolo Srinivasan, Felice Crupi, Eddy Simoen, Paolo Magnone, Calogero Pace, Durga Misra, Cor Claeys:
Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks. Microelectron. Reliab. 47(4-5): 501-504 (2007) - [j1]Paolo Magnone, Calogero Pace, Felice Crupi, Gino Giusi:
Low frequency noise in nMOSFETs with subnanometer EOT hafnium-based gate dielectrics. Microelectron. Reliab. 47(12): 2109-2113 (2007)
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