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A. Souifi
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2020 – today
- 2022
- [c6]Camille Laguna
, Mathieu Bernard, Julien Garrione, Niccolo Castellani, Valentina Meli, S. Martin, François Aussenac, D. Rouchon, N. Rochat, Emmanuel Nolot, Guillaume Bourgeois, Marie Claire Cyrille, Liviu Militaru, A. Souifi, François Andrieu, Gabriele Navarro
Multilayer Structure in SeAsGeSi-based OTS for High Thermal Stability and Reliability Enhancement. ESSDERC 2022: 225-228 - 2021
- [c5]Camille Laguna
Multilayer OTS Selectors Engineering for High Temperature Stability, Scalability and High Endurance. IMW 2021: 1-4
2010 – 2019
- 2017
- [j10]Slah Hlali
Effect of interface traps for ultra-thin high-k gate dielectric based MIS devices on the capacitance-voltage characteristics. Microelectron. Reliab. 75: 154-161 (2017) - [j9]S. Chatbouri, M. Troudi
Interface traps effect on the charge transport mechanisms in metal oxide semiconductor structures based on silicon nanocrystals. Microelectron. Reliab. 78: 227-232 (2017) - [c4]Getenet Tesega Ayele, Stéphane Monfray, Frédéric Boeuf, Jean-Pierre Cloarec
Development of ultrasensitive extended-gate Ion-sensitive-field-effect-transistor based on industrial UTBB FDSOI transistor. ESSDERC 2017: 264-267 - 2015
- [j8]N. Abdelwahed, M. Troudi
Impact of defect on I(V) instabilities observed on Ti/4H-SiC high voltage Schottky diodes. Microelectron. Reliab. 55(8): 1169-1173 (2015) - [c3]Dominique Drouin, Mohamed Amine-Bounouar, Gabriel Droulers
3D microelectronic with BEOL compatible devices. VTS 2015: 1 - 2013
- [c2]S. Chatbouri, M. Troudi
Effect of illumination on the electron transport mechanisms in Silicon nanocrystal-based nanopixels. SSD 2013: 1-4
2000 – 2009
- 2009
- [j7]Aimen Boubaker, M. Troudi
Electrical characteristics and modelling of multi-island single-electron transistor using SIMON simulator. Microelectron. J. 40(3): 543-546 (2009) - [c1]Wei Xuan
Discussion on the performances of hybrid SET-MOSFET Voltage Controlled Oscillators. ICECS 2009: 479-482 - 2007
- [j6]Neila Hizem, A. Kalboussi, R. Adhiri, A. Souifi:
Blue/green luminescence based on Zn(S)Se/GaAs heterostructures. Microelectron. J. 38(4-5): 496-500 (2007) - [j5]Aimen Boubaker, Nabil Sghaier
A new SIMPLORER model for single-electron transistors. Microelectron. J. 38(8-9): 894-899 (2007) - [j4]M. Troudi
Macro-modeling for the compact simulation of single electron transistor using SIMPLORER. Microelectron. J. 38(12): 1156-1160 (2007) - 2006
- [j3]Nabil Sghaier
Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates. Microelectron. J. 37(4): 363-370 (2006) - [j2]Nabil Sghaier
Static and low-frequency noise characterization in submicron MOSFETs for memories cells applications. Microelectron. J. 37(11): 1399-1403 (2006) - 2001
- [j1]Liviu Militaru, A. Souifi, M. Mouis, Alain Chantre, G. Brémond:
Investigation of deep traps in silicon-germanium epitaxial base bipolar transistors with a single polysilicon quasi self-aligned architecture. Microelectron. Reliab. 41(2): 253-263 (2001)
Coauthor Index
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