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Direct observation of the lattice sites of implanted manganese in silicon
/ da Silva, Daniel José ; Wahl, Ulrich (Lisbon, IST) ; Martins Correia, Joao (Lisbon, IST) ; Amorim, Lígia (Leuven U.) ; Decoster, Stefan (Leuven U.) ; Castro Ribeiro Da Silva, Manuel (Lisboa U.) ; Da Costa Pereira, Lino Miguel (Leuven U.) ; Esteves De Araujo, Araujo Joao Pedro (Porto U.)
/IS453 Collaboration ; EC-SLI Collaboration
We have studied the influence of electronic doping on the preferred lattice sites of implanted 61Co, and the related stabilities against thermal annealing, in silicon. Using the beta- emission channeling technique we have identified Co on ideal substitutional (ideal S) sites, sites displaced from bond-centered towards substitutional (near-BC) sites and sites displaced from tetrahedral interstitial towards anti-bonding (near-T) sites. [...]
CERN-OPEN-2017-007.-
Porto, Portugal : Porto U., 2016 - 7 p.
- Published in : Appl. Phys. A 122 (2016) 241
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Influence of the doping on the lattice sites of Fe in Si
/ Silva, Daniel (Porto U.) ; Wahl, Ulrich (Lisbon, IST) ; Martins Correia, Joao (Lisbon, IST) ; Esteves De Araujo, Araujo Joao Pedro (Porto U.)
/EC-SLI Collaboration
We report on the lattice location and thermal stability of Fe in n+- and p+-type silicon. By means of emission channeling we have observed Fe on ideal substitutional sites, sites located in between bond-centered (BC) and substitutional sites, and sites displaced from tetrahedral towards anti-bonding sites. [...]
CERN-OPEN-2017-008.-
Porto, Portugal : Porto U., 2014 - 4 p.
- Published in : AIP Conf. Proc. 1583 (2014) 24-27
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Lattice location and thermal stability of implanted nickel in silicon studied by on-line emission channeling
/ Silva, Daniel José (Porto U.) ; Wahl, Ulrich (IST/ITN, Lisbon) ; Correia, Joaõ Guilherme (IST/ITN, Lisbon) ; Pereira, Lino Miguel da Costa (Leuven U.) ; Amorim, Lígia Marina (Leuven U.) ; da Silva, Manuel Ribeiro (Lisbon U., CFNUL) ; David-Bosne, Eric (IST/ITN, Lisbon ; Aveiro U.) ; Araújo, João Pedro (Porto U.)
/EC-SLI Collaboration
We have studied the lattice location of implanted nickel in silicon, for different doping types (n, n$^{+}$ and p$^{+}$). By means of on-line emission channeling, $^{65}$Ni was identified on three different sites of the diamond lattice: ideal substitutional sites, displaced bond-center towards substitutional sites (near-BC) and displaced tetrahedral interstitial towards anti-bonding sites (near-T). [...]
CERN-OPEN-2014-018.-
Porto, Portugal : Porto U., 2013 - 10 p.
- Published in : J. Appl. Phys. 115 (2013) 023504
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Diluted manganese on the bond-centered site in germanium
/ Decoster, S (Leuven U.) ; Vantomme, A (Leuven U.) ; Cottenier, S (Gent U.) ; Wahl, U (ITN, Sacavem) ; Correia, JG (ITN, Sacavem) ; Pereira, LMC (Leuven U.) ; Lacasta, C (Valencia U., IFIC) ; Da Silva, MR (Lisbon U.)
The functional properties of Mn-doped Ge depend to large extent on the lattice location of the Mn impurities. Here, we present a lattice location study of implanted diluted Mn by means of electron emission channeling. [...]
CERN-OPEN-2013-008.-
Leuven : Instituut voor Kern- en Stralingsfysica, 2010 - 3 p.
- Published in : Appl. Phys. Lett. 97 (2010) 151914
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Origin of the lattice sites occupied by implanted Co in Si
/ Silva, Daniel (Porto U.) ; Wahl, Ulrich (Lisbon, IST) ; Martins Correia, Joao (Lisbon, IST) ; Da Costa Pereira, Lino Miguel (Leuven U.) ; Amorim, Lígia (Leuven U.) ; Castro Ribeiro Da Silva, Manuel (Lisbon U.) ; Esteves De Araujo, Araujo Joao Pedro (Porto U.)
/EC-SLI Collaboration
We have investigated the lattice location of implanted 61Co in silicon. By means of emission channeling, three different lattice sites have been identified: ideal substitutional sites, displaced bond-centered sites and displaced tetrahedral interstitial sites. [...]
CERN-OPEN-2017-002.-
Porto, Portugal : Porto U., 2014 - 5 p.
- Published in : Semiconductor Science and Technology: 29 (2014) , pp. 125006
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7.
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Mixed Zn and O substitution of Co and Mn in ZnO
/ Pereira, Lino Miguel da Costa (Leuven U. ; ITN, Sacavem ; Porto U.) ; Wahl, Ulrich (ITN, Sacavem ; Lisbon U., CFNUL) ; Decoster, Stefan (Leuven U.) ; Correia, João Guilherme (ITN, Sacavem ; Lisbon U., CFNUL) ; Amorim, Lígia Marina (Leuven U.) ; da Silva, Manuel Ribeiro (Lisbon U., CFNUL) ; Araújo, João Pedro (Porto U.) ; Vantomme, André (Leuven U.)
/EC-SLI Collaboration
The physical properties of an impurity atom in a semiconductor are primarily determined by the lattice site it occupies. In general, this occupancy can be correctly predicted based on chemical intuition, but not always. [...]
CERN-OPEN-2014-004.-
Leuven, Belgium : KU Leuven, 2011 - 6 p.
- Published in : Phys. Rev. B 84 (2011) 125204
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Drawing the geometry of 3d transition metal-boron pairs in silicon from electron emission channeling experiments
/ Silva, Daniel (Porto U.) ; Wahl, Ulrich (Lisbon, IST) ; Martins Correia, Joao (Lisbon, IST) ; Augustyns, Valerie (Leuven U.) ; De Lemos Lima, Tiago Abel (Leuven U.) ; Granadeiro Costa, Angelo Rafael (Lisbon, IST) ; David Bosne, Eric (Lisbon, IST) ; Castro Ribeiro Da Silva, Manuel (Lisbon U.) ; Esteves De Araujo, Araujo Joao Pedro (Porto U.) ; Da Costa Pereira, Lino Miguel (Leuven U.)
/EC-SLI Collaboration
Although the formation of transition metal-boron pairs is currently well established in silicon processing, the geometry of these complexes is still not completely understood. We investigated the lattice location of the transition metals manganese, iron, cobalt and nickel in n- and p+-type silicon by means of electron emission channeling. [...]
CERN-OPEN-2017-004.-
Leuven, Belgium : Leuven U., 2016 - 4 p.
- Published in : Nucl. Instrum. Methods Phys. Res., B 371 (2016) 59-62
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Influence of n$^{+}$ and p$^{+}$ doping on the lattice sites of implanted Fe in Si
/ Silva, Daniel José (Porto U.) ; Wahl, Ulrich (Lisbon, IST ; ITN, Lisbon) ; Correia, João Guilherme (Lisbon, IST ; ITN, Lisbon) ; Araújo, João Pedro (Porto U.)
/EC-SLI Collaboration
We report on the lattice location of implanted $^{59}$Fe in n$^{+}$ and p$^{+}$ type Si by means of emission channeling. We found clear evidence that the preferred lattice location of Fe changes with the doping of the material. [...]
CERN-OPEN-2014-006.-
Sacavém, Portugal : Instituto Superior Tecnico/Instituto Tecnológico e Nuclear, Universidade de Lisboa, 2013 - 10 p.
- Published in : J. Appl. Phys. 114 (2013) 103503
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Transition metal impurities on the bond-centered site in Ge
/ Decoster, S (Leuven U.) ; Cottenier, S (Leuven U. ; RWTH Aachen U. ; U. Gent) ; De Vries, B (Leuven U.) ; Emmerich, H (RWTH Aachen U.) ; Wahl, U (ITN, Sacavem) ; Correia, J G (ITN, Sacavem) ; Vantomme, A (Leuven U.)
/EC-SLI Collaboration
We report on the lattice location of ion implanted Fe, Cu, and Ag impurities in germanium from a combined approach of emission channeling experiments and ab initio total energy calculations. Following common expectation, a fraction of these transition metals (TMs) was found on the substitutional Ge position. [...]
CERN-OPEN-2013-004.-
Leuven : Instituut voor Kern- en Stralingsfysica, 2009 - 4 p.
- Published in : Phys. Rev. Lett. 102 (2009) 065502
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