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Investigation of Single Event Latch-up effects in the ALICE SAMPA ASIC / Mahmood, Sohail Musa (Oslo U.) ; Roeed, Ketil (Oslo U.) /ALICE Collaboration
During RUN 3 and RUN 4 at the Large Hadron Collider (LHC), the SAMPA chip will be used in the upgraded front end electronics of the ALICE (A Large Ion Collider Experiment) Time Projection Chamber (TPC) and Muon Chambers (MCH). Previously, it was reported that the SAMPAV2 prototypes were susceptible to the high energy proton induced Single Event Latch-up (SEL) events. [...]
SISSA, 2019 - 5 p. - Published in : PoS TWEPP2018 (2019) 023
In : Topical Workshop on Electronics for Particle Physics, Antwerp, Belgique, 17 - 21 Sep 2018, pp.023

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(91)

Exploring Single Event Effects in the ALICE (A Large Ion Collider Experiment) SAMPA chip / Mahmood, Sohail Musa
After the second Long-Shutdown at the Large Hadron Collider, improved resolution requirements for the tracking detectors of the High Energy Physics experiments demand a higher number of readout channels and more compact front-end electronics [...]
CERN-THESIS-2020-270 - 280 p.

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(86)

First irradiation test results of the ALICE SAMPA ASIC / Mahmood, Sohail Musa (U. Oslo (main) ; U. Sao Paulo (main)) ; Røed, Ketil (U. Oslo (main)) ; Winje, Fredrik Lindseth (U. Oslo (main)) ; Velure, Arild (U. Bergen (main)) /ALICE
With the continuous scaling of the CMOS technology, the CMOS circuits are considered to be more tolerant to Single event Latchup (SEL) effects due to the reduction in the supply voltages. This paper reports the results from SEL testing performed on the first two prototypes for the new readout ASIC (SAMPA). [...]
SISSA, 2018 - 5 p. - Published in : PoS TWEPP-17 (2018) 093 Fulltext: PDF; External link: PoS server
In : Topical Workshop on Electronics for Particle Physics, Santa Cruz, Ca, United States Of America, 11 - 15 Sep 2017, pp.093

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(49)

Cosmic ray simulation experiments for the study of single event upsets and latch-up in CMOS memories / Stephen, J H ; Sanderson, T K ; Mapper, D ; Farren, J ; Harboe-Sørensen, R ; Adams, L
AERE-R-10949-MF. - 1983. - 22 p.
CERN library copies

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(46)

The Pion Single-Event Latch-Up Cross Section Enhancement: Mechanisms and Consequences for Accelerator Hardness Assurance / Coronetti, Andrea (CERN ; Jyvaskyla U.) ; Alia, Ruben Garcia (CERN) ; Cerutti, Francesco (CERN) ; Hajdas, Wojtek (PSI, Villigen) ; Soderstrom, Daniel (Jyvaskyla U.) ; Javanainen, Arto (Jyvaskyla U. ; Vanderbilt U. (main)) ; Saigne, Frederic (Montpellier U.)
Pions make up a large part of the hadronic environment typical of accelerator mixed fields. Characterizing device cross sections against pions is usually disregarded in favor of tests with protons, whose single-event latch-up (SEL) cross section is, nonetheless, experimentally found to be lower than that of pions for all energies below 250 MeV. [...]
2021 - 10 p. - Published in : IEEE Trans. Nucl. Sci. 68 (2021) 1613-1622 Fulltext: PDF;

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(41)

Use of external resistor to prevent radiation induced latch-up in commercial CMOS IC's / Skorobogatov, P K ; Nikiforov, A Y ; Demidov, A A
CERN, 2000 Published version from CERN: PDF;
In : 6th Workshop on Electronics for LHC Experiments, Krakow, Poland, 11 - 15 Sep 2000, pp.496-498 (CERN-2000-010)

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(37)

SEE Flux and Spectral Hardness Calibration of Neutron Spallation and Mixed-Field Facilities / Cecchetto, Matteo (CERN) ; Fernández-Martínez, Pablo (CERN) ; García Alía, Rubén (CERN) ; Ferraro, Rudy (CERN) ; Danzeca, Salvatore (CERN) ; Wrobel, Frédéric (IES, Montpellier) ; Cazzaniga, Carlo (Daresbury) ; Frost, Christopher D (Daresbury)
The approach of calibrating neutron environments through well-known Single Event Upset (SEU)-based SRAM memories is applied to a neutron spallation and mixed-field facility. Implications on the Soft Error Rate (SER) induced by intermediate energy neutrons are evaluated comparing operational environments, such as ground level and accelerator shielded areas, with those reproducible by facilities. [...]
2019 - 9 p. - Published in : IEEE Trans. Nucl. Sci. 66 (2019) 1532-1540
In : Conference on Radiation and its Effects on Components and Systems, Gothenburg, Sweden, 16 - 21 Sep 2018, pp.1532-1540

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(36)

Heavy Ion Nuclear Reaction Impact on SEE Testing: From Standard to Ultra-high Energies / Wyrwoll, Vanessa (CERN) ; García Alía, Rubén (CERN) ; Røed, Ketil (Oslo U.) ; Fernández-Martínez, Pablo (CERN) ; Kastriotou, Maria (CERN) ; Cecchetto, Matteo (CERN) ; Kerboub, Nourdine (CERN) ; Tali, Maris (CERN) ; Cerutti, Francesco (CERN)
We perform Monte Carlo (MC) simulations to describe heavy ion (HI) nuclear interactions in a broad energy range (4 MeV/n–150 GeV/n), focusing on the single event effect (SEE) sub-linear energy transfer (LET) impact. Previously retrieved single event latch-up (SEL) experimental data have indicated that standard energy ions (~10 MeV/n) can produce high-LET secondaries through fusion reactions which are expected to strongly influence the SEE cross section in the sub-LET region. [...]
2020 - 9 p. - Published in : IEEE Trans. Nucl. Sci. 67 (2020) 1590-1598 Fulltext from publisher: PDF;

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(35)

About SEEs in the HV Distributor System of the TileCal / Chadelas, R ; Gris, P ; Lambert, D
SEE tests performed in october 2001 (27-28) on the HV distributor system of the Tile calorimeter gave us estimated numbers concerning soft and latch-up events. [...]
ATL-TILECAL-2002-006. - 2002. - 7 p.
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Irradiation Test Results on Cryogenics Electronic Cards using the Smartfusion2 FPGA / Trikoupis, Nikolaos (CERN) ; Casas-Cubillos, Juan (CERN) ; Danzeca, Salvatore (CERN)
In the context of implementing more control and data processing capabilities in new electronic cards at the European Organization for Nuclear Research (CERN), the Smartfusion2 Flash-based Reprogrammable Field Programmable Gate Array (FPGA) has been tested in the CHARM radiation facility at CERN. The CHARM facility was configured to offer a representative radiation environment of the CERN's Large Hardon Collider (LHC) accelerator. [...]
2021 - 6 p. - Published in : 10.1109/radecs45761.2018.9328694
In : Conference on Radiation and its Effects on Components and Systems (RADECS 2019), 16 - 20 Sep 2019, Montpellier, France

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