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CERN Document Server 31 のレコードが見つかりました。  1 - 10次最後  レコードへジャンプ: 検索にかかった時間: 0.79 秒 
1.
Gain measurements of the first proof-of-concept PicoAD prototype with a 55Fe X-ray radioactive source / Milanesio, M (Geneva U.) ; Iacobucci, G (Geneva U.) ; Paolozzi, L (Geneva U. ; CERN) ; Munker, M (Geneva U.) ; Cardella, R (Geneva U.) ; Gurimskaya, Y (CERN) ; Martinelli, F (Geneva U.) ; Picardi, A (Geneva U.) ; Rücker, H (IHP, Frankfurt) ; Trusch, A (IHP, Frankfurt) et al.
The Picosecond Avalanche Detector is a multi-junction silicon pixel detector devised to enable charged-particle tracking with high spatial resolution and picosecond time-stamping capability. A proof-of-concept prototype of the PicoAD sensor has been produced by IHP microelectronics. [...]
2023 - 3 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 1046 (2023) 167807 Fulltext: PDF;
In : 15th Pisa Meeting on Advanced Detectors, La Biodola - Isola D'elba, It, 22 - 28 May 2022, pp.167807
2.
Picosecond Avalanche Detector — working principle and gain measurement with a proof-of-concept prototype / Paolozzi, L. (Geneva U. ; CERN) ; Munker, M. (Geneva U.) ; Cardella, R. (Geneva U.) ; Milanesio, M. (Geneva U.) ; Gurimskaya, Y. (Geneva U.) ; Martinelli, F. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) ; Rücker, H. (IHP, Frankfurt) ; Trusch, A. (IHP, Frankfurt) ; Valerio, P. (Geneva U.) et al.
The Picosecond Avalanche Detector is a multi-junction silicon pixel detector based on a $\mathrm{(NP)_{drift}(NP)_{gain}}$ structure, devised to enable charged-particle tracking with high spatial resolution and picosecond time-stamp capability. It uses a continuous junction deep inside the sensor volume to amplify the primary charge produced by ionizing radiation in a thin absorption layer. [...]
arXiv:2206.07952.- 2022-10-20 - 15 p. - Published in : JINST 17 (2022) P10032 Fulltext: 2206.07952 - PDF; Publication - PDF;
3.
Testbeam Results of the Picosecond Avalanche Detector Proof-Of-Concept Prototype / Iacobucci, G. (Geneva U.) ; Zambito, S. (Geneva U.) ; Milanesio, M. (Geneva U.) ; Moretti, T. (Geneva U.) ; Saidi, J. (Geneva U.) ; Paolozzi, L. (Geneva U. ; CERN) ; Munker, M. (Geneva U.) ; Cardella, R. (Geneva U.) ; Martinelli, F. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) et al.
The proof-of-concept prototype of the Picosecond Avalanche Detector, a multi-PN junction monolithic silicon detector with continuous gain layer deep in the sensor depleted region, was tested with a beam of 180 GeV pions at the CERN SPS. The prototype features low noise and fast SiGe BiCMOS frontend electronics and hexagonal pixels with 100 μm pitch. [...]
arXiv:2208.11019.- 2022-10-25 - 22 p. - Published in : JINST 17 (2022) P10040 Fulltext: document - PDF; 2208.11019 - PDF;
4.
Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology / Iacobucci, G. (Geneva U.) ; Paolozzi, L. (Geneva U.) ; Valerio, P. (Geneva U.) ; Moretti, T. (Geneva U.) ; Cadoux, F. (Geneva U.) ; Cardarelli, R. (Geneva U.) ; Cardella, R. (Geneva U.) ; Débieux, S. (Geneva U.) ; Favre, Y. (Geneva U.) ; Ferrere, D. (Geneva U.) et al.
A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 $\mu$m. [...]
arXiv:2112.08999.- 2022-02-10 - 17 p. - Published in : JINST 17 (2022) P02019 Fulltext: 2112.08999 - PDF; document - PDF;
5.
Monolithic Picosecond Silicon Pixel Sensors for Future Physics: Experiments and Applications / Iacobucci, Giuseppe (U. Geneva (main)) ; Paolozzi, Lorenzo (U. Geneva (main)) ; Valerio, Pierpaolo (CERN)
Particle-physics, space research and several other fields of basic and applied science necessitate the production of large area detectors made by a new generation of thin sensors able to provide, at the same time, excellent position and time resolution. In the case of high-energy physics experiments, for example, with the advent of the very large number of collisions per bunch crossing foreseen at the High-Luminosity Large Hadron Collider (HL-LHC) (HL-LHC) and at the future Future Circular Collider (FCC), the density of particles close to the interaction point due to the pileup of events will be so high that efficient pattern-recognition and track-reconstruction will not be possible without precise timing information. At the HL-LHC, 4D event reconstruction will be achieved by two different detectors, specialised either in space or in time measurement. [...]
2021 - 7 p. - Published in : IEEE Instrum. Measur. Mag. 24 (2021) 5-11
6.
Measurements and analysis of different front-end configurations for monolithic SiGe BiCMOS pixel detectors for HEP applications / Martinelli, Fulvio (CERN ; Ecole Polytechnique, Lausanne) ; Magliocca, Chiara (Geneva U.) ; Cardella, Roberto (Geneva U.) ; Charbon, Edoardo (Ecole Polytechnique, Lausanne) ; Iacobucci, Giuseppe (Geneva U.) ; Nessi, Marzio (Geneva U. ; CERN) ; Paolozzi, Lorenzo (Geneva U. ; CERN) ; Rücker, Holger (IHP, Frankfurt) ; Valerio, Pierpaolo (Geneva U.)
This paper presents a small-area monolithic pixel detector ASIC designed in 130 nm SiGe BiCMOS technology for the upgrade of the pre-shower detector of the FASER experiment at CERN. The purpose of this prototype is to study the integration of fast front-end electronics inside the sensitive area of the pixels and to identify the configuration that could satisfy at best the specifications of the experiment. [...]
arXiv:2111.11184.- 2021-12-22 - 20 p. - Published in : JINST 16 (2021) P12038 Fulltext: 2111.11184 - PDF; document - PDF;
7.
A massively scalable Time-to-Digital Converter with a PLL-free calibration system in a commercial 130 nm process / Martinelli, Fulvio (CERN ; Ecole Polytechnique, Lausanne) ; Valerio, Pierpaolo (Geneva U.) ; Cardarelli, Roberto (INFN, Rome2) ; Charbon, Edoardo (Ecole Polytechnique, Lausanne) ; Iacobucci, Giuseppe (Geneva U.) ; Nessi, Marzio (CERN) ; Paolozzi, Lorenzo (CERN ; Geneva U.)
A 33.6 ps LSB Time-to-Digital converter was designed in 130 nm BiCMOS technology. The core of the converter is a differential 9-stage ring oscillator, based on a multi-path architecture. [...]
arXiv:2107.10162.- 2021-11-17 - 22 p. - Published in : JINST 16 (2021) P11023 Fulltext: 2107.10162 - PDF; document - PDF;
8.
Deep Underground Neutrino Experiment (DUNE) Near Detector Conceptual Design Report / DUNE Collaboration
This report describes the conceptual design of the DUNE near detector
arXiv:2103.13910; FERMILAB-PUB-21-067-E-LBNF-PPD-SCD-T.- 2021-09-29 - 250 p. - Published in : Instruments 5 (2021) 31 Fulltext: 2103.13910 - PDF; fermilab-pub-21-067-e-lbnf-ppd-scd-t - PDF; Fulltext from Publisher: PDF; External link: Fermilab Library Server
9.
Time resolution and power consumption of a monolithic silicon pixel prototype in SiGe BiCMOS technology / Paolozzi, L. (Geneva U.) ; Cardarelli, R. (INFN, Rome2) ; Débieux, S. (Geneva U.) ; Favre, Y. (Geneva U.) ; Ferrère, D. (Geneva U.) ; Gonzalez-Sevilla, S. (Geneva U.) ; Iacobucci, G. (Geneva U.) ; Kaynak, M. (IHP, Frankfurt) ; Martinelli, F. (CERN ; Ecole Polytechnique, Lausanne) ; Nessi, M. (CERN) et al.
SiGe BiCMOS technology can be used to produce ultra-fast, low-power silicon pixel sensors that provide state-of-the-art time resolution even without an internal gain mechanism. The development of such sensors requires the identification of the main factors that may degrade the timing performance and the characterisation of the dependance of the sensor time resolution on the amplifier power consumption. [...]
arXiv:2005.14161.- 2020-11-13 - 12 p. - Published in : JINST 15 (2020) P11025 Fulltext: PDF; Fulltext from publisher: PDF;
10.
A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology / Iacobucci, Giuseppe (Geneva U.) ; Cardarelli, R. (INFN, Rome2) ; Débieux, S. (Geneva U.) ; Di Bello, F.A. (Geneva U.) ; Favre, Y. (Geneva U.) ; Hayakawa, D. (Geneva U.) ; Kaynak, M. (IHP, Frankfurt) ; Nessi, M. (Geneva U. ; CERN) ; Paolozzi, L. (Geneva U.) ; Rücker, H. (IHP, Frankfurt) et al.
A monolithic pixelated silicon detector designed for high time resolution has been produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP Mikroelektronik. This proof-of-concept chip contains hexagonal pixels of 65 {\mu}m and 130 {\mu}m side. [...]
arXiv:1908.09709.- 2019-11-06 - 10 p. - Published in : JINST 14 (2019) P11008 Fulltext: fulltext1751067 - PDF; 1908.09709 - PDF; Fulltext from Publisher: PDF;

CERN Document Server : 31 のレコードが見つかりました。   1 - 10次最後  レコードへジャンプ:
似た著者名:
12 Valerio, P.
10 Valerio, Pierpaolo
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