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Lattice location study of low-fluence ion-implanted 124In in 3C-SiC
/ Costa, A. R. G. ; Wahl, U. ; Correia, J. G. ; David-Bosne, E. ; Augustyns, V. ; Lima, T. A. L. ; Silva, D. J. ; da Silva, M. R. ; Bharuth-Ram, K. ; Pereira, L. M. C.
We report on the lattice location of low-fluence ion implanted 124In in single-crystalline 3C-SiC by means of the emission channeling technique using radioactive isotopes produced at the ISOLDE/CERN facility. In the sample implanted at room temperature to a fluence of 4 × 1012 cm−2, 60(9)% of the In atoms were found slightly displaced (0.12–0.20 Å) from substitutional Si sites, with the remainder occupying sites of low crystallographic symmetry, the so-called random sites. [...]
2019
- Published in : Journal of Applied Physics 125 (2019) 215706
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Lattice sites of ion-implanted Mn, Fe and Ni in 6H-SiC
/ Costa, A R G (IST, Lisbon (main)) ; Wahl, U (IST, Lisbon (main)) ; Correia, J G (IST, Lisbon (main)) ; David-Bosne, E (IST, Lisbon (main)) ; Amorim, L M (Leuven U.) ; Augustyns, V (Leuven U.) ; Silva, D J (Porto U., Astron. Dept.) ; da Silva, M R (Lisbon U., CFNUL) ; Pereira, L M C (Leuven U.)
/ISOLDE
Using radioactive isotopes produced at the CERN-ISOLDE facility, the lattice location of the implanted transition metal (TM) ions $^56$Mn, $^59$Fe and $^65$Ni in n-type single-crystalline hexagonal 6H-SiC was studied by means of the emission channeling technique. TM probes on carbon coordinated tetrahedral interstitial sites ($T_C$) and on substitutional silicon sites ($S_{Si,h+k}$) were identified. [...]
2017 - 10 p.
- Published in : Semicond. Sci. Technol. 33 (2017) 015021
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Direct observation of the lattice sites of implanted manganese in silicon
/ da Silva, Daniel José ; Wahl, Ulrich (Lisbon, IST) ; Martins Correia, Joao (Lisbon, IST) ; Amorim, Lígia (Leuven U.) ; Decoster, Stefan (Leuven U.) ; Castro Ribeiro Da Silva, Manuel (Lisboa U.) ; Da Costa Pereira, Lino Miguel (Leuven U.) ; Esteves De Araujo, Araujo Joao Pedro (Porto U.)
/IS453 Collaboration ; EC-SLI Collaboration
We have studied the influence of electronic doping on the preferred lattice sites of implanted 61Co, and the related stabilities against thermal annealing, in silicon. Using the beta- emission channeling technique we have identified Co on ideal substitutional (ideal S) sites, sites displaced from bond-centered towards substitutional (near-BC) sites and sites displaced from tetrahedral interstitial towards anti-bonding (near-T) sites. [...]
CERN-OPEN-2017-007.-
Porto, Portugal : Porto U., 2016 - 7 p.
- Published in : Appl. Phys. A 122 (2016) 241
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Emission channeling lattice location experiments with short-lived isotopes
/ Wahl, Ulrich (Centro de Ciências e Tecnologias Nucleares (C2TN), Instituto Superior Técnico, Universidade de Lisboa, Sacavém, Portugal) ; Amorim, Lígia Marina (Instituut voor Kern- en Stralingsfysica (IKS), KU Leuven, Belgium) ; Araújo, João Pedro (Departamento de Física, Universidade do Porto, Portugal) ; Augustyns, Valérie (Instituut voor Kern- en Stralingsfysica (IKS), KU Leuven, Belgium) ; Bharuth-Ram, Krish (University of KwaZulu Natal, Durban, South Africa) ; David-Bosne, Eric (Centro de Ciências e Tecnologias Nucleares (C2TN), Instituto Superior Técnico, Universidade de Lisboa, Sacavém, Portugal) ; Correia, João Guilherme (Centro de Ciências e Tecnologias Nucleares (C2TN), Instituto Superior Técnico, Universidade de Lisboa, Sacavém, Portugal) ; Costa, Ângelo (Centro de Ciências e Tecnologias Nucleares (C2TN), Instituto Superior Técnico, Universidade de Lisboa, Sacavém, Portugal) ; Miranda, Pedro (Departamento de Física, Universidad de Chile, Santiago, Chile) ; Pereira, Lino Miguel da Costa (Instituut voor Kern- en Stralingsfysica (IKS), KU Leuven, Belgium) et al.
CERN-INTC-2014-001 ; INTC-P-218-ADD-2.
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2014.
Fulltext - Original Document (INTC-P-218)
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Lattice location and thermal stability of implanted nickel in silicon studied by on-line emission channeling
/ Silva, Daniel José (Porto U.) ; Wahl, Ulrich (IST/ITN, Lisbon) ; Correia, Joaõ Guilherme (IST/ITN, Lisbon) ; Pereira, Lino Miguel da Costa (Leuven U.) ; Amorim, Lígia Marina (Leuven U.) ; da Silva, Manuel Ribeiro (Lisbon U., CFNUL) ; David-Bosne, Eric (IST/ITN, Lisbon ; Aveiro U.) ; Araújo, João Pedro (Porto U.)
/EC-SLI Collaboration
We have studied the lattice location of implanted nickel in silicon, for different doping types (n, n$^{+}$ and p$^{+}$). By means of on-line emission channeling, $^{65}$Ni was identified on three different sites of the diamond lattice: ideal substitutional sites, displaced bond-center towards substitutional sites (near-BC) and displaced tetrahedral interstitial towards anti-bonding sites (near-T). [...]
CERN-OPEN-2014-018.-
Porto, Portugal : Porto U., 2013 - 10 p.
- Published in : J. Appl. Phys. 115 (2013) 023504
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Precise lattice location of substitutional and interstitial Mg in AlN
/ Amorim, Lígia Marina (Leuven U.) ; Wahl, Ulrich (IST/ITN, Lisbon) ; Pereira, Lino Miguel da Costa (Leuven U.) ; Decoster, Stefan (Leuven U.) ; Silva, Daniel José (Porto U.) ; Silva, Manuel Ribeiro da (Lisbon U., CFAUL) ; Gottberg, Alexander (CERN) ; Correia, João Guilherme (IST/ITN, Lisbon) ; Temst, Kristiaan (Leuven U.) ; Vantomme, André (Leuven U.)
The lattice site location of radioactive $^{27}$Mg implanted in AlN was determined by means of emission channeling. The majority of the $^{27}$Mg was found to substitute for Al, yet significant fractions (up to 33%) were also identified close to the octahedral interstitial site. [...]
CERN-OPEN-2014-013.-
Leuven : KU Leuven, 2013 - 5 p.
- Published in : Appl. Phys. Lett. 103 (2013) 262102
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Minority anion substitution by Ni in ZnO
/ Pereira, Lino Miguel da Costa (Leuven U.) ; Wahl, Ulrich (IST/ITN, Lisbon) ; Correia, João Guilherme (IST/ITN, Lisbon) ; Amorim, Lígia Marina (Leuven U.) ; Silva, Daniel José (Porto U.) ; David-Bosne, Eric (IST/ITN, Lisbon ; Aveiro U.) ; Decoster, Stefan (Leuven U.) ; da Silva, Manuel Ribeiro (Lisbon U., CFNUL) ; Temst, Kristiaan (Leuven U.) ; Vantomme, André (Leuven U.)
/EC-SLI Collaboration
We report on the lattice location of implanted Ni in ZnO using the $\beta$− emission channeling technique. In addition to the majority substituting for the cation (Zn), a significant fraction of the Ni atoms occupy anion (O) sites. [...]
CERN-OPEN-2014-011.-
Leuven : Instituut voor Kern- en Stralingsfysica, KU Leuven, 2013 - 4 p.
- Published in : Appl. Phys. Lett. 103 (2013) 091905
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Influence of n$^{+}$ and p$^{+}$ doping on the lattice sites of implanted Fe in Si
/ Silva, Daniel José (Porto U.) ; Wahl, Ulrich (Lisbon, IST ; ITN, Lisbon) ; Correia, João Guilherme (Lisbon, IST ; ITN, Lisbon) ; Araújo, João Pedro (Porto U.)
/EC-SLI Collaboration
We report on the lattice location of implanted $^{59}$Fe in n$^{+}$ and p$^{+}$ type Si by means of emission channeling. We found clear evidence that the preferred lattice location of Fe changes with the doping of the material. [...]
CERN-OPEN-2014-006.-
Sacavém, Portugal : Instituto Superior Tecnico/Instituto Tecnológico e Nuclear, Universidade de Lisboa, 2013 - 10 p.
- Published in : J. Appl. Phys. 114 (2013) 103503
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Emission channeling with short-lived isotopes
: lattice location of impurities in semiconductors and oxides
/ Pereira, L M C (Instituut voor Kern- en Stralingsfysica (IKS), KU Leuven, 3001 Leuven, Belgium) ; Amorim, L M (Instituut voor Kern- en Stralingsfysica (IKS), KU Leuven, 3001 Leuven, Belgium) ; Araújo, J P (Departamento de Física, Universidade do Porto, 4169-007 Porto, Portugal) ; Augustyns, V (Instituut voor Kern- en Stralingsfysica (IKS), KU Leuven, 3001 Leuven, Belgium) ; Bharuth-Ram, K (University of KwaZulu Natal, Durban 4041, South Africa) ; Bosne, E (Departamento de Física, Universidade de Aveiro, 4169-007 Porto, Portugal) ; Correia, J G (Centro de Ciências e Tecnologias Nucleares (C2TN), Instituto Superior Técnico, Universidade de Lisboa, 2686-953 Sacavém, Portugal (on leave at ISOLDE-CERN)) ; Costa, A (Centro de Ciências e Tecnologias Nucleares (C2TN), Instituto Superior Técnico, Universidade de Lisboa, 2686-953 Sacavém, Portugal) ; Miranda, P (Departamento de Física, Universidad de Chile, Las Palmeras 3425, Santiago, Chile) ; Silva, D J (Departamento de Física, Universidade do Porto, 4169-007 Porto, Portugal) et al.
CERN-INTC-2013-031 ; INTC-P-391.
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2013.
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