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Proton Direct Ionization Upsets at Tens of MeV
/ Coronetti, Andrea (CERN ; IES, Montpellier) ; García Alía, Rubén (CERN) ; Lucsanyi, David (CERN) ; Wang, Jialei (Leuven U.) ; Saigné, Frédéric (IES, Montpellier) ; Javanainen, Arto (Jyvaskyla U. ; Vanderbilt U. (main)) ; Leroux, Paul (Leuven U.) ; Prinzie, Jeffrey (Leuven U.)
Experimental monoenergetic proton single-event upset (SEU) cross sections of a 65-nm low core-voltage static random access memory (SRAM) were found to be exceptionally high not only at low energies (< 3 MeV), but also at energies $>$ 3 MeV and extending up to tens of MeV. The SEU cross Section from 20-MeV protons exceeds the 200-MeV proton SEU cross Section by almost a factor of 3. [...]
2023 - 8 p.
- Published in : IEEE Trans. Nucl. Sci. 70 (2023) 314-321
Fulltext: PDF;
In : 2022 IEEE Nuclear and Space Radiation Effects Conference, Provo, Utah, USA, 18 - 23 Jul 2022, pp.314-321
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Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation
/ Røed, Ketil (Oslo U.) ; Eriksen, Dag Øistein (Oslo U.) ; Ceccaroli, Bruno (Unlisted, NO) ; Martinella, Corinna (Jyvaskyla U. ; CERN) ; Javanainen, Arto (Jyvaskyla U. ; Vanderbilt U.) ; Reshanov, Sergey (Unlisted, SE) ; Massetti, Silvia (ESTEC, Noordwijk)
The radiation tolerance of isotopic enriched and natural silicon carbide junction barrier Schottky diodes are compared under heavy ion irradiation. Both types of devices experience leakage current degradation as well as single-event burnout events. [...]
2022 - 8 p.
- Published in : IEEE Trans. Nucl. Sci. 69 (2022) 1675-1682
Fulltext from publisher: PDF;
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SEU characterization of commercial and custom-designed SRAMs based on 90 nm technology and below
/ Coronetti, Andrea (CERN ; Jyvaskyla U.) ; Cecchetto, Matteo (CERN) ; Wang, Jialei (Leuven U.) ; Tali, Maris (CERN) ; Martinez, Pablo Fernandez (CERN) ; Kastriotou, Maria (CERN) ; Papadopoulou, Athina (CERN) ; Bilko, Kacper (CERN) ; Castellani, Florent (ENSAE, Toulouse) ; Sacristan, Mario (CERN) et al.
The R2E project at CERN has tested a few commercial SRAMs and a custom-designed SRAM, whose data are complementary to various scientific publications. The experimental data include low- and high-energy protons, heavy ions, thermal, intermediate- and high-energy neutrons, high-energy electrons and high-energy pions..
2020 - 8 p.
- Published in : 10.1109/redw51883.2020.9325822
In : 2020 IEEE Radiation Effects Data Workshop, Online, US, 7 Dec 2020, pp.1-8
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The Pion Single-Event Latch-Up Cross Section Enhancement: Mechanisms and Consequences for Accelerator Hardness Assurance
/ Coronetti, Andrea (CERN ; Jyvaskyla U.) ; Alia, Ruben Garcia (CERN) ; Cerutti, Francesco (CERN) ; Hajdas, Wojtek (PSI, Villigen) ; Soderstrom, Daniel (Jyvaskyla U.) ; Javanainen, Arto (Jyvaskyla U. ; Vanderbilt U. (main)) ; Saigne, Frederic (Montpellier U.)
Pions make up a large part of the hadronic environment typical of accelerator mixed fields. Characterizing device cross sections against pions is usually disregarded in favor of tests with protons, whose single-event latch-up (SEL) cross section is, nonetheless, experimentally found to be lower than that of pions for all energies below 250 MeV. [...]
2021 - 10 p.
- Published in : IEEE Trans. Nucl. Sci. 68 (2021) 1613-1622
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Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment
/ Söderström, Daniel (Jyvaskyla U.) ; Matana Luza, Lucas (Montpellier U.) ; Kettunen, Heikki (Jyvaskyla U.) ; Javanainen, Arto (Jyvaskyla U. ; Vanderbilt U.) ; Farabolini, Wilfrid (CERN ; Saclay) ; Gilardi, Antonio (CERN ; Naples U. ; INFN Naples) ; Coronetti, Andrea (Jyvaskyla U. ; CERN) ; Poivey, Christian (ESTEC, Noordwijk) ; Dilillo, Luigi (Montpellier U.)
This study investigates the response of synchronous dynamic random access memories to energetic electrons and especially the possibility of electrons to cause stuck bits in these memories. Three different memories with different node sizes (63, 72, and 110 nm) were tested. [...]
2021 - 8 p.
- Published in : IEEE Trans. Nucl. Sci. 68 (2021) 716-723
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Assessment of Proton Direct Ionization for the Radiation Hardness Assurance of Deep Submicron SRAMs Used in Space Applications
/ Coronetti, Andrea (CERN ; Jyvaskyla U.) ; Alia, Ruben Garcia (CERN) ; Wang, Jialei (Leuven U.) ; Tali, Maris (CERN) ; Cecchetto, Matteo (CERN) ; Cazzaniga, Carlo (Rutherford) ; Javanainen, Arto (Jyvaskyla U. ; Vanderbilt U.) ; Saigne, Frederic (IES, Montpellier) ; Leroux, Paul (Leuven U.)
2021 - 12 p.
- Published in : IEEE Trans. Nucl. Sci. 68 (2021) 937-948
fulltext from publisher: PDF;
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Radiation Hardness Assurance Through System-Level Testing: Risk Acceptance, Facility Requirements, Test Methodology, and Data Exploitation
/ Coronetti, Andrea (CERN ; Jyvaskyla U.) ; Garcia Alia, Ruben (CERN) ; Budroweit, Jan (DLR, Bremen) ; Rajkowski, Tomasz (Unlisted, FR) ; Da Costa Lopes, Israel (IES, Montpellier) ; Niskanen, Kimmo (IES, Montpellier) ; Soderstrom, Daniel (Jyvaskyla U.) ; Cazzaniga, Carlo (Rutherford) ; Ferraro, Rudy (CERN) ; Danzeca, Salvatore (CERN) et al.
2021 - 12 p.
- Published in : IEEE Trans. Nucl. Sci. 68 (2021) 958-969
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Direct Ionization Impact on Accelerator Mixed-Field Soft-Error Rate
/ García Alía, Rubén (CERN) ; Tali, Maris (CERN) ; Brugger, Markus (CERN) ; Cecchetto, Matteo (CERN) ; Cerutti, Francesco (CERN) ; Cononetti, Andrea (CERN) ; Danzeca, Salvatore (CERN) ; Esposito, Luigi (CERN) ; Fernández-Martínez, Pablo (CERN) ; Gilardoni, Simone (CERN) et al.
We investigate, through measurements and simulations, the possible direct ionization impact on the accelerator soft-error rate (SER), not considered in standard qualification approaches. Results show that, for a broad variety of state-of-the-art commercial components considered in the 65–16-nm technological range, indirect ionization is still expected to dominate the overall SER in the accelerator mixed-field. [...]
2019 - 8 p.
- Published in : IEEE Trans. Nucl. Sci. 67 (2019) 345-352
Fulltext: PDF;
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