| Article | |
| Title | Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation |
| Author(s) | Røed, Ketil (Oslo U.) ; Eriksen, Dag Øistein (Oslo U.) ; Ceccaroli, Bruno (Unlisted, NO) ; Martinella, Corinna (Jyvaskyla U. ; CERN) ; Javanainen, Arto (Jyvaskyla U. ; Vanderbilt U.) ; Reshanov, Sergey (Unlisted, SE) ; Massetti, Silvia (ESTEC, Noordwijk) |
| Publication | 2022 |
| Number of pages | 8 |
| In: | IEEE Trans. Nucl. Sci. 69 (2022) 1675-1682 |
| DOI | 10.1109/TNS.2022.3173061 |
| Subject category | Detectors and Experimental Techniques |
| Abstract | The radiation tolerance of isotopic enriched and natural silicon carbide junction barrier Schottky diodes are compared under heavy ion irradiation. Both types of devices experience leakage current degradation as well as single-event burnout events. The results were comparable, although the data may indicate a marginally lower thresholds for the isotopic enriched devices at lower linear energy transfer (LET). Slightly higher reverse bias threshold values for leakage current degradation were also observed compared to previously published work. |
| Copyright/License | publication: (License: CC-BY-4.0) |
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Record created 2022-08-09, last modified 2022-08-11