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Bandgap reference, temperature sensor and low drop-out regulator circuits monolithic sensors in TPSCo 65 nm ISC technology
/ Yelkenci, A. (Nikhef, Amsterdam) ; Qui, S. (Utrecht U.) ; Rossewij, M.J. (Utrecht U.) ; Grelli, A. (Utrecht U.) ; Gajanana, D. (NIKHEF, Amsterdam) ; Gromov, V. (NIKHEF, Amsterdam)
With Inner Tracking System v3 (ITS3), the ALICE experiment is pursuing a wafer-scale Monolithic Active Pixel Sensor (MAPS). The chip is being developed in TPSCo 65 nm ISC technology which is under study in the framework of CERN EP R&D; on monolithic sensors for High Energy Physics (HEP) applications. [...]
2023
- Published in : Journal of Instrumentation 18 (2023) C02017
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Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics
/ Rinella, G Aglieri (CERN) ; Andronic, A (Munster U., ITP) ; Antonelli, M (INFN, Trieste ; Trieste U.) ; Baccomi, R (INFN, Trieste ; Trieste U.) ; Ballabriga, R (CERN) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Baudot, J (Strasbourg, IPHC) ; Becht, P (Heidelberg U.) ; Benotto, F (INFN, Turin ; Turin U.) et al.
The long term goal of the CERN Experimental Physics Department R&D; on monolithic sensorsis the development of sub-100nm CMOS sensors for high energy physics. The first technologyselected is the TPSCo 65nm CMOS imaging technology. [...]
2023 - 15 p.
- Published in : PoS Pixel2022 (2023) 083
Fulltext: PDF;
In : 10th International Workshop on Semiconductor Pixel Detectors for Tracking and Imaging (PIXEL 2022), Santa Fe, USA, 11 - 16 Dec 2022, pp.083
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3.
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Development of a Stitched Monolithic Pixel Sensor prototype (MOSS chip) towards the ITS3 upgrade of the ALICE Inner Tracking system
/ Vicente Leitao, P (CERN) ; Aglieri Rinella, G (CERN) ; Bugiel, S (Strasbourg, IPHC) ; Cecconi, L (CERN) ; de Melo, J L A (CERN) ; De Robertis, G (INFN, Bari ; Bari U.) ; Deng, W (CERN ; Hua-Zhong Normal U.) ; Dorda Martin, A (CERN ; KIT, Karlsruhe) ; Dorosz, P (CERN) ; Fang, X (Strasbourg, IPHC) et al.
The MOnolithic Stitched Sensor (MOSS) is a development prototype chip towards the ITS3 vertexing detector for the ALICE experiment at the LHC. Designed using a 65 nm CMOS Imaging technology, it aims at profiting from the stitching technique to construct a single-die monolithic pixel detector of 1.4 cm × 26 cm. [...]
2023 - 8 p.
- Published in : JINST 18 (2023) C01044
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C01044
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5.
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Design implementation and test results of the RD53A, a 65 nm large scale chip for next generation pixel detectors at the HL-LHC
/ Marconi, S (Marseille, CPPM) ; Barbero, M B (Marseille, CPPM) ; Fougeron, D (Marseille, CPPM) ; Godiot, S (Marseille, CPPM) ; Menouni, M (Marseille, CPPM) ; Pangaud, P (Marseille, CPPM) ; Rozanov, A (Marseille, CPPM) ; Breugnon, P (Marseille, CPPM) ; Bomben, M (Paris U., VI-VII) ; Calderini, G (Paris U., VI-VII) et al.
The RD53A large scale pixel demonstrator chip has been developed in 65 nm CMOS technology by the RD53 collaboration, in order to face the unprecedented design requirements of the pixel 2 phase upgrades of the CMS and ATLAS experiments at CERN. This prototype chip is designed to demonstrate that a set of challenging specifications can be met, such as: high granularity (small pixels of 50×50 or 25× 100 µm2) and large pixel chip size (~2x2 cm2), high hit rate (3 GHz/cm2), high readout speed, very high radiation levels (500 Mrad - 1 Grad) and operation with serial powering. [...]
2019 - 4 p.
- Published in : 10.1109/NSSMIC.2018.8824486
In : 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC 2018), Sydney, Australia, 10 - 17 Nov 2018, pp.8824486
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8.
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Design of analog front-ends for the RD53 demonstrator chip
/ Gaioni, L (Bergamo U. ; INFN, Pavia) ; De Canio, F (Bergamo U. ; INFN, Pavia) ; Nodari, B (Bergamo U. ; INFN, Pavia) ; Manghisoni, M (Bergamo U. ; INFN, Pavia) ; Re, V (Bergamo U. ; INFN, Pavia) ; Traversi, G (Bergamo U. ; INFN, Pavia) ; Barbero, M B (Marseille, CPPM) ; Fougeron, D (Marseille, CPPM) ; Gensolen, F (Marseille, CPPM) ; Godiot, S (Marseille, CPPM) et al.
The RD53 collaboration is developing a large scale pixel front-end chip, which will be a tool to evaluate the performance of 65 nm CMOS technology in view of its application to the readout of the innermost detector layers of ATLAS and CMS at the HL-LHC. Experimental results of the characterization of small prototypes will be discussed in the frame of the design work that is currently leading to the development of the large scale demonstrator chip RD53A to be submitted in early 2017. [...]
SISSA, 2017 - 14 p.
- Published in : PoS Vertex 2016 (2017) 036
Fulltext: PDF; External link: PoS server
In : VERTEX 2016, La Biodola, Italy, 25 - 30 Sep 2016, pp.036
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9.
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Recent progress of RD53 Collaboration towards next generation Pixel Read-Out Chip for HL-LHC
/ Demaria, N (INFN, Turin) ; Barbero, M B (Marseille, CPPM) ; Fougeron, D (Marseille, CPPM) ; Gensolen, F (Marseille, CPPM) ; Godiot, S (Marseille, CPPM) ; Menouni, M (Marseille, CPPM) ; Pangaud, P (Marseille, CPPM) ; Rozanov, A (Marseille, CPPM) ; Wang, A (Marseille, CPPM) ; Bomben, M (Paris U., VI-VII) et al.
/RD53
This paper is a review of recent progress of RD53 Collaboration. Results obtained on the study of the radiation effects on 65 nm CMOS have matured enough to define first strategies to adopt in the design of analog and digital circuits. [...]
FERMILAB-CONF-16-622-PPD.-
2016
- Published in : JINST 11 (2016) C12058
IOP Open Access article: PDF;
In : International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (PIXEL2016), Sestri Levante, Italy, 5 - 9 Sep 2016, pp.C12058
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Radiation hard analog circuits for ALICE ITS upgrade
/ Gajanana, D (NIKHEF, Amsterdam) ; Gromov, V (NIKHEF, Amsterdam) ; Kuijer, P (NIKHEF, Amsterdam) ; Kugathasan, T (CERN) ; Snoeys, W (CERN)
The ALICE experiment is planning to upgrade the ITS (Inner Tracking System) [1] detector during the LS2 shutdown. The present ITS will be fully replaced with a new one entirely based on CMOS monolithic pixel sensor chips fabricated in TowerJazz CMOS 0.18 μ m imaging technology. [...]
2016 - 10 p.
- Published in : JINST 11 (2016) C03027
IOP Open Access article: PDF;
In : Topical Workshop on Electronics for Particle Physics, Lisbon, Portugal, 28 Sep - 2 Oct 2015, pp.C03027
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