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1.
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Improvement in the Design and Performance of the Monopix2 Reticle-Scale DMAPS
/ Caicedo, Ivan (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Barrillon, Pierre (Marseille, CPPM) ; Bespin, Christian (Bonn U.) ; Berdalovic, Ivan (CERN) ; Breugnon, Patrick (Marseille, CPPM) ; Cardella, Roberto (CERN) ; Degerli, Yavuz (IRFU, Saclay) ; Dingfelder, Jochen (Bonn U.) ; de Acedo, Leyre Flores Sanz (CERN) et al.
“LF-Monopix2” and “TJ-Monopix2” are the second generation of “Monopix” Depleted Monolithic Active Pixel Sensor prototypes fabricated in 150 nm and 180 nm CMOS processes, respectively. Both devices implement a fully functional column-drain read-out architecture at a reticle-size scale, but differ on the concept used for pixel design. [...]
2024 - 13 p.
- Published in : JPS Conf. Proc. 42 (2024) 011021
Fulltext: PDF;
In : The International Workshop on Vertex Detectors (VERTEX 2022), Tateyama, Japan, 24 - 28 Oct 2022, pp.011021
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2.
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Recent results and perspectives of the Monopix Depleted Monolithic Active Pixel Sensors (DMAPS)
/ Hügging, Fabian (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Barrilon, Pierre (Marseille, CPPM) ; Bespin, Christian (Bonn U.) ; Breugnon, Patrick (Marseille, CPPM) ; Caicedo, Ivan (Bonn U.) ; Degerli, Yavuz (IRFU, Saclay) ; Dingfelder, Jochen (Bonn U.) ; Hemperek, Tomasz (Bonn U.) ; Hirono, Toko (Bonn U.) et al.
The integration of readout electronics and sensors into a single entity of silicon in monolithic pixel detectors lowers the material budget while simplifying the production procedure compared to the conventional hybrid pixel detector concept. The increasing availability of high-resistivity substrates and high-voltage capabilities in commercial CMOS processes facilitates the application of depleted monolithic active pixel sensors (DMAPS) in modern particle physics experiments. [...]
2024 - 3 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1070 (2025) 170007
Fulltext: PDF;
In : 16th Pisa Meeting on Advanced Detectors (Pisameet 2024), La Biodola, Isola D'elba, Italy, 26 May - 1 Jun 2024, pp.170007
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3.
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Cross-talk of a large-scale depleted monolithic active pixel sensor (DMAPS) in 180nm CMOS technology
/ Schall, Lars (Bonn U.) ; Bespin, Christian (Bonn U.) ; Caicedo, Ivan (Bonn U.) ; Dingfelder, Jochen (Bonn U.) ; Hemperek, Tomasz (Bonn U.) ; Hirono, Toko (Bonn U.) ; Hügging, Fabian (Bonn U.) ; Krüger, Hans (Bonn U.) ; Moustakas, Konstantinos (Bonn U.) ; Pernegger, Heinz (CERN) et al.
Monolithic pixel detectors combine readout electronics and sensor in a single entity of silicon, which simplifies the production procedure and lowers the material budget compared to conventional hybrid pixel detector concepts. Benefiting from the advances in commercial CMOS processes towards large biasing voltage capabilities and the increasing availability of high-resistivity substrates, depleted monolithic active pixel sensors (DMAPS) are able to cope with the high-rate and high-radiation environments faced in modern high-energy physics experiments. [...]
arXiv:2402.12153.-
2024-04-19 - 7 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1064 (2024) 169381
Fulltext: Publication - PDF; 2402.12153 - PDF;
In : 13th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Vancouver, Canada, 3 - 8 Dec 2023, pp.169381
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4.
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Charge collection and efficiency measurements of the TJ-Monopix2 DMAPS in 180 nm CMOS technology
/ Bespin, Christian (Bonn U.) ; Caicedo, Ivan (Bonn U.) ; Dingfelder, Jochen Christian (Bonn U.) ; Hemperek, Tomasz (Bonn U. ; DECTRIS Baden) ; Hirono, Toko (Bonn U. ; DESY) ; Hügging, Fabian (Bonn U.) ; Krüger, Hans (Bonn U.) ; Moustakas, Konstantinos (Bonn U. ; PSI, Villigen) ; Pernegger, Heinz (CERN) ; Riedler, Petra (CERN) et al.
Monolithic CMOS pixel detectors have emerged as competitive contenders in the field of high-energy particle physics detectors. By utilizing commercial processes they offer high-volume production of such detectors. [...]
arXiv:2301.13638.-
2023 - 8 p.
- Published in : PoS: Pixel2022 (2023) , pp. 080
Fulltext: document - PDF; 2301.13638 - PDF;
In : International Workshop on Semiconductor Pixel Detectors for Tracking and Imaging (PIXEL 2022), Santa Fe, USA, 11 - 16 Dec 2022, pp.080
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5.
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Development and characterization of a DMAPS chip in TowerJazz 180 nm technology for high radiation environments
/ Bespin, Christian (Bonn U.) ; Berdalovic, Ivan (CERN ; Zagreb U.) ; Caicedo, Ivan (Bonn U.) ; Cardella, Roberto (CERN) ; Dingfelder, Jochen (Bonn U.) ; Flores, Leyre (CERN) ; Hemperek, Tomasz (Bonn U.) ; Krüger, Hans (Bonn U.) ; Kugathasan, Thanushan (CERN) ; Marin Tobon, Cesar (CERN) et al.
The increasing availability of commercial CMOS processes with high-resistivity wafers has fueled the R&D; of depleted monolithic active pixel sensors (DMAPS) for use in high energy physics experiments. One of these developments is a series of monolithic pixel detectors with column-drain readout architecture and small collection electrode allowing for low-power designs (TJ-Monopix). [...]
2022 - 6 p.
In : Vienna Conference on Instrumentation, Online, Online, 21 - 25 Feb 2022, pp.167189
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6.
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Radiation hard DMAPS pixel sensors in 150 nm CMOS technology for operation at LHC
/ Barbero, M. (Marseille, CPPM) ; Barrillon, Pierre (Marseille, CPPM) ; Bespin, C. (Bonn U.) ; Bhat, S. (Marseille, CPPM) ; Breugnon, Patrick (Marseille, CPPM) ; Caicedo, Ivan (Bonn U.) ; Chen, Z. (Marseille, CPPM) ; Degerli, Y. (IRFU, Saclay) ; Dingfelder, J. (Bonn U.) ; Godiot, Stephanie (Marseille, CPPM) et al.
Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric field. As a consequence the signal is small and slow, and the radiation tolerance is below the requirements for LHC experiments by factors of 100 to 1000. [...]
arXiv:1911.01119.-
2020-05-22 - 22 p.
- Published in : JINST
Fulltext: PDF;
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7.
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Depleted Fully Monolithic Active CMOS Pixel Sensors (DMAPS) in High Resistivity 150~nm Technology for LHC
/ Hirono, Toko (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Barrillon, Pierre (Marseille, CPPM) ; Bhat, Siddharth (Marseille, CPPM) ; Breugnon, Patrick (Marseille, CPPM) ; Caicedo, Ivan (Bonn U.) ; Chen, Zongde (Marseille, CPPM) ; Daas, Michael (Bonn U.) ; Degerli, Yavuz (IRFU, Saclay) ; Godiot, Stephanie (Marseille, CPPM) et al.
Depleted monolithic CMOS active pixel sensors (DMAPS) have been developed in order to demonstrate their suitability as pixel detectors in the outer layers of a toroidal LHC apparatus inner tracker (ATLAS ITk) pixel detector in the high-luminosity large hadron collider (HL-LHC). Two prototypes have been fabricated using 150 nm CMOS technology on high resistivity (> 2 k$\Omega$ $cm^2$) wafers. [...]
arXiv:1803.09260.-
2019-04-21 - 5 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 924 (2019) 87-91
Fulltext: PDF;
In : 11th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD11) in conjunction with 2nd Workshop on SOI Pixel Detectors (SOIPIX2017) at OIST, Okinawa, Japan, Okinawa, Japan, 10 - 15 Dec 2017, pp.87-91
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8.
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Development of depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade
/ Rymazewski, Piotr (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Bhat, Siddharth (Marseille, CPPM) ; Breugnon, Patrick (Marseille, CPPM) ; Caicedo, Ivan (Bonn U.) ; Chen, Zongde (Marseille, CPPM) ; Degerli, Yavuz (IRFU, Saclay) ; Godiot, Stephanie (Marseille, CPPM) ; Guilloux, Fabrice (IRFU, Saclay) ; Guyot, Claude (IRFU, Saclay) et al.
This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150 nm CMOS process. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade for the High Luminosity Large Hadron Collider (HL-LHC). [...]
arXiv:1711.01233.-
SISSA, 2018-01-10 - 5 p.
- Published in : PoS TWEPP-17 (2018) 045
Fulltext: PoS(TWEPP-17)045 - PDF; arXiv:1711.01233 - PDF; External link: PoS server
In : Topical Workshop on Electronics for Particle Physics, Santa Cruz, Ca, United States Of America, 11 - 15 Sep 2017, pp.045
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9.
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Precision Luminosity of LHC Proton-Proton Collisions at 13 TeV Using Hit-Counting with TPX Pixel Devices
/ Sopczak, André (IEAP CTU, Prague) ; Ali, Babar (IEAP CTU, Prague) ; Asawatavonvanich, Thanawat (IEAP CTU, Prague) ; Begera, Jakub (IEAP CTU, Prague) ; Bergmann, Benedikt (IEAP CTU, Prague) ; Billoud, Thomas (Montreal U.) ; Burian, Petr (IEAP CTU, Prague) ; Caicedo, Ivan (IEAP CTU, Prague) ; Caforio, Davide (IEAP CTU, Prague) ; Heijne, Erik (IEAP CTU, Prague) et al.
A network of Timepix (TPX) devices installed in the ATLAS cavern measures the LHC luminosity as a function of time as a stand-alone system. The data were recorded from 13 TeV proton-proton collisions in 2015. [...]
arXiv:1702.00711.-
2017-02-06 - 10 p.
Fulltext: arXiv:1702.00711 - PDF; Precision_Luminosity_of_LHC_ProtonProton_Collisions_at_13_TeV_Using_Hit_Counting_With_TPX_Pixel_Devices - PDF;
In : IEEE Nuclear Science Symposium and Medical Imaging Conference, Strasbourg, France, 29 Oct - 6 Nov 2016, pp.915
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10.
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Ionizing Energy Depositions After Fast Neutron Interactions in Silicon
/ Bergmann, Benedikt (IEAP CTU, Prague) ; Pospisil, Stanislav (IEAP CTU, Prague) ; Caicedo, Ivan (IEAP CTU, Prague) ; Kierstead, James (Brookhaven) ; Takai, Helio (Brookhaven) ; Frojdh, Erik (CERN)
In this study we present the ionizing energy depositions in a 300 μm thick silicon layer after fast neutron impact. With the Time-of-Flight (ToF) technique, the ionizing energy deposition spectra of recoil silicons and secondary charged particles were assigned to (quasi-)monoenergetic neutron energies in the range from 180 keV to hundreds of MeV. [...]
2016
- Published in : IEEE Trans. Nucl. Sci. 63 (2016) 2372-2378
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