Investigation of high resistivity p-type FZ silicon diodes after 60Co γ-irradiation - CERN Document Server

Pagina principale > CERN Departments > Physics (PH) > EP-R&D Programme on Technologies for Future Experiments > EP-R&D Programme on Technologies for Future Experiments (EP RDET) > Investigation of high resistivity p-type FZ silicon diodes after 60Co γ-irradiation > Riferimenti

Investigation of high resistivity p-type FZ silicon diodes after 60Co γ-irradiation - Liao, C. et al - arXiv:2306.15336

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