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PHYSICS FOR COMPUTER
SCIENCE AND INFORMATION
TECHNOLOGY
21PH101
UNIT V
Batch/Year : 2021-2022 / I
Date : 10-01-2022
TABLE OF CONTENTS
1 Course Objectives 7
2 Syllabus 8
3 Course Outcomes 9
4 CO - PO/PSO Mapping 10
5 Lecture Plan 11
Quantum Computing
5.1 Introduction to Nanomaterials 13
5.10 Tunneling 26
7 Solved Problems 38
Video Links 39
Quiz 40
8 Assignment 41
10 Part B – Questions 45
On completion of this course, the students will gain knowledge and will be able to
CO1: Know the principle, construction and working of lasers and their
applications in fibre optic communication.
C03: Analyze the classical and quantum electron theories and energy band
structures.
PO PO PO PO PO PO PO PO PO PO PO PO
COs
1 2 3 4 5 6 7 8 9 10 11 12
CO1 3 2 3 2 - - - - - - - -
CO2 3 2 3 2 - - - - - - - -
CO3 3 2 3 2 - - - - - - - -
CO4 3 2 3 2 - - - - - - - -
CO5 3 2 3 2 - - - - - - - -
CO6 3 2 3 2 - - - - - - - -
LECTURE PLAN
No. Mode
Actual Taxono
S.N Topics to be of Pertaini Propos of
Lecture my
o. Covered Perio ng CO ed Date Deliver
Date Level
ds y
PPT,
Introduction to
1 1 CO5 K1 Chalk &
nanomaterials
Talk
Electron density in
PPT,
bulk materials
2 1 CO5 K2 Chalk &
Size dependence of
Talk
Fermi energy
Quantum
confinement and PPT,
3 quantum structures 1 CO5 K2 Chalk &
Density of states in Talk
quantum well
Density of states in PPT,
4 quantum wire and 1 CO5 K2 Chalk &
quantum dot Talk
Bandgap of PPT,
5 nanomaterial 1 CO5 K1 Chalk &
Tunneling Talk
Single electron
PPT,
phenomenon and
6 1 CO6 K1, K2 Chalk &
single electron
Talk
transistor
PPT,
7 Quantum dot laser 1 CO6 K2 Chalk &
Talk
Introduction to PPT,
8 quantum 1 CO6 K1 Chalk &
computing Talk
Differences
PPT,
between classical
9 1 CO6 K2 Chalk &
and quantum
Talk
computations
ACTIVITY
Is measuring an art or a science?
The purpose of this activity is to help students understand the concepts of accuracy
and precision and how they are important in measurements at the nano-scale.
https://nnin.org/sites/default/files/files/Measure_art_science_TG.pdf
https://nnin.org/sites/default/files/files/Measure_art_science_SG.pdf
Nanoelectronics covers a diverse set of devices and materials, with the common
characteristic that they are so small that physical effects alter the materials'
properties on a nanoscale – inter-atomic interactions and quantum mechanical
properties play a significant role in the workings of these devices. At the nanoscale,
new phenomena take preference over those that hold influence in the macro-world.
Quantum effects such as tunneling and atomistic disorder dominate the
characteristics of these nanoscale devices.
5.2 ELECTRON DENSITY IN BULK MATERIAL
The bulk material is a collection of atoms having properties that are from individual
atoms. The material which is having grain size of 1-100 nm is called nanomaterial
that can exhibit unique, optical, mechanical, magnetic, conductive and absorptive
properties different from that of bulk materials. It is to be noted that the
nanomaterial differ from bulk materials in the number of available energy states. In
a bulk material, the states within each energy sublevel are so close that they
combine into band.
The total number of electron states, , with energies upto , can be determined based
on quantum mechanics using the following equation
[ ]
3
π 8 𝑚 2 3 /2
𝑁 = 𝐸 𝑉
3 h
2
…(5.1)
[ ]
3/ 2
𝑁 π 8 𝑚
𝑛= = 𝐸3 /2
𝑉 3 h
2 …(5.2)
Density of states is the number of energy states per unit volume per unit energy
…(5.3)
𝑑𝑛
𝑍 ( 𝐸 ) =
𝑑𝐸
[ ]
3/ 2 …(5.4)
π 8 𝑚 1/ 2
𝑍 ( 𝐸)= 𝐸
2 h2
The above eqn. (5.4) represents that (i.e., Density of states for a bulk material is
directly proportional to the square root of energy)
𝑛e =∫ 𝑍 ( 𝐸 ) 𝑑𝐸 𝐹 ( 𝐸 )
Let be the number of electrons per unit volume,
…(5.5)
[ ]
Substitute value in the above equation 3 / 2
π 8𝑚
𝑛𝑒 =∫ 𝐸 1/ 2 𝑑𝐸 𝐹 ( 𝐸 )
2 h
2 …(5.6)
The effect of temperature on Fermi function can be given by the following equation
1
𝐹 ( 𝐸 )= …(5.7)
1+ exp
( 𝐸 − 𝐸F
𝑘𝐵 T
We know that, Femi energy level is the maximum energy that can be occupied by
)
electrons at 0 K.
At 0 K, if E< F (E) =1
[ ]
3 𝐸𝐹 1
𝜋 8𝑚
0
𝑛𝑒 =
2 h
2
2
∫ 𝐸 2 …(5.8)
𝑑𝐸
0
[ ]
𝜋 8𝑚
3
2
𝐸 3/
𝐹
2
…(5.9)
𝑛𝑒 = 0
2 h
2
3/2
In a conductor at T=0 K, the electron density is given by the number of free
electrons,
[ ]
3
𝜋 8 𝑚 2 …(5.10)
𝑛𝑒 = 𝐸3
𝐹
/2
3 h
2 0
[ ]
𝜋 8 𝑚
3 …(5.11)
2 3 /2
𝑛𝑒 = 𝐸 𝐹0
3 h
2
From the above equation,
[ ]
2 3
3 / 2 3 𝑛𝑒 h 2
𝐸 𝐹0 =
𝜋 8 𝑚 …(5.12)
Fermi energy at 0 K
[ ]
2
3 3 h2 2 / 3
𝐸 𝐹0 = 𝑛𝑒
𝜋 8 𝑚 …(5.13)
Here,
[ ]
2
3 3 h2
=constant
𝜋 8 𝑚 …(5.14)
Electron density ( is the total number of free electrons ( per unit volume
N e
n e = …(5.16)
V
Equation (5.15) becomes,
𝐸 𝐹0 ∝ 𝑛𝑒
2/ 3
∝ ( 𝑁 𝑒
𝑉 …(5.17) )
Equation (5.17) approximately becomes
𝐸 𝐹0 ∝ ( 𝑁 𝑒
𝑉 )
…(5.18)
Hence, we can say that the energy states will have the same energy for small
volume and large volume of atoms. But for small volume of atoms we get larger
spacing between states. This is not only for conductors, but also for semiconductors
and insulators too.
Let us consider that the energy states upto are occupied by free electrons (N).
𝑁 𝑒
Fig. 5.1 Size dependence of Fermi energy
1 …(5.20)
∆ 𝐸 ∝
𝑉
Thus, the spacing between states is inversely proportional in the volume of the solid.
If particle size is reduced in nano order, energy states become discrete and
separation between states increases when particle size decreases.
The energy sublevel and the spacing between energy states within it will depend on
the number of atoms as shown in Fig. 5.1.
Electrons are confined if the size of material of the order of the de-Broglie
wavelength. To confine an electron of wavelength,, a material should have a
characteristic dimension at least half of its wavelength
𝜆 h
𝐷= =
2 2 𝑚𝑣
SIZE EFFECTS BAND GAP OF QUANTUM DOT
The above diagram shows as the size of the crystal decreases the bandgap
increases.
The more energy needed to excite dot. Also more energy is released when returning
to ground state. Therefore there is shift from red to blue in emitted light. Thus same
material can emit any colour by changing quantum dot size. The emitted wavelength
depends on the size of the quantum dot.
(i) Quantum dot is one in which all three-dimensions are in nanoscale to create
quantum confinement. It is also called zero dimensional nanomaterial. Metal
particles with size 1-10 nm diameters behave like quantum dots.
…(5.21)
𝑛2 h 2
𝐸 = ∗ 2
8
where where and are the quantum 𝑚
numbers. 𝐿
…(5.22)
2 8 𝑚 ∗ 𝐿2
𝑛 = 2
𝐸
h
( )
∗ 2
𝜋 8𝑚 𝐿
𝑁 ( 𝐸 ) 𝑑𝐸 = 𝑑𝐸
…(5.26)
4 h
2
Density of energy states is the number of energy state per unit area .
𝑤𝑒𝑙𝑙 𝑁 ′ ( 𝐸 ) 𝑑𝐸
𝐷𝑠 𝑑𝐸 = …(5.28)
𝐿2
𝑤𝑒𝑙𝑙 4 𝜋 𝑚∗
𝐷𝑠 𝑑𝐸 = 𝑑𝐸
…(5.29)
h2
On substituting` , eqn. (5.29) becomes
𝑤𝑒𝑙𝑙 𝑚∗
𝐷𝑠 = 2
for 𝐸 ≥ 𝐸
…(5.30)
𝑜
𝜋 ℏ
where is the ground state energy of the quantum well system.
∗
𝑚
𝐷 𝑠
𝑤𝑒𝑙𝑙
=
𝜋 ℏ 2 ∑ 𝜎( 𝐸−𝐸 𝑛)
…(5.31)
𝑛
The bottom of the conduction band set as the origin of energy . If energy is higher
than , more than one sub-band should be there, with at least two values and .
Fig. 5.6 Density of states in quantum well
On substituting` , eqn. (5.29) becomes
𝑤𝑒𝑙𝑙 𝑚∗
𝐷𝑠 = 2
for 𝐸 ≥ 𝐸
…(5.30)
𝑜
𝜋 ℏ
where is the ground state energy of the quantum well system.
∗
𝑚
𝐷 𝑠
𝑤𝑒𝑙𝑙
=
𝜋 ℏ
2 ∑ 𝜎( 𝐸−𝐸 …(5.31)
𝑛 )
𝑛
The bottom of the conduction band set as the origin of energy . If energy is higher
than , more than one sub-band should be there, with at least two values and .
Thus the density of states of quantum well increases by a factor each time the
energy become higher than the bottom of a new sub-band (, , , ...). So that it exhibit
a stair-case like shape as shown in Fig. 5.6.
Density of state of quantum wire is defined as the number of available states per
unit length per unit energy interval.
…(5.32)
𝑤𝑖𝑟𝑒 2 × 𝑑𝑛
𝐷 𝑠 =
𝐿
Fig. 5.7 Density of states in quantum wire
Energy of electron
𝑛2 h 2 …(5.33)
𝐸 = ∗ 2
8 𝑚 𝐿
( )
∗ 2 1/ 2
8 𝑚 𝐿 …(5.34)
1/ 2
𝑛= 2
𝐸
h
( ) ( )
∗ 1 /2 ∗ 1 /2
𝐿 8𝑚 − 1 /2 𝐿 8𝑚 …(5.35)
𝑑𝑛= 𝐸 𝑑𝐸 = 𝑑𝐸
2 h2 2 𝐸 h2
Equation (5.32) becomes
( )
∗ 1/2
8𝑚
𝐷
𝑤𝑖𝑟𝑒
𝑠 = 𝐸
− 1/ 2
( h= 2 𝜋…(5.36)
ℏ)
h2
( )
1/ 2
𝑤𝑖𝑟𝑒 8 𝑚∗ −…(5.37)
1 /2
𝐷 𝑠 = 𝐸
( 2 𝜋 ℏ )2
𝑤𝑖𝑟𝑒 ( 2 𝑚∗ )1 / 2 …(5.38)
𝐷 𝑠 = 𝐸− 1 /2
𝜋 ℏ
𝐷𝑠 𝑤𝑖𝑟𝑒
=
1 √ 2 𝑚…(5.39)
∗
𝜋 ℏ √¿ ¿ ¿
By taking as the ground state energy,
𝐷𝑠 𝑤𝑖𝑟𝑒
=
1
𝜋 ℏ √ 2 𝑚∗
𝐸 − 𝐸0
…(5.40)
for 𝐸 ≥ 𝐸 𝑜
5.8 DENSITY OF STATES IN QUANTUM DOT
In quantum dot, electrons are confined in all the three-dimensions. So there is only
one level is possible with 2 states; corresponding to up spin and down spin.
=∑ 2 𝛿 √( 𝐸 − 𝐸
𝑑𝑜𝑡
𝐷𝑠 0 )
…(5.42)
𝑛
The energies are discrete bunches of varying densities. So they appear as dots in the
graph.
Fig. 5.9 Density of states in Bulk, Quantum well, Quantum wire and
Quantum dot
Applications:
1. It is used in quantum dot laser, quantum dot memory device, quantum dot
photo- detector and quantum cryptography.
2. It is also used in LED display, amplifier, biological sensor, tumor targeting and
diagnostics.
3. New generation semiconductor laser consists of several million nano-sized
crystals called quantum dots in the active region and act as light emitters.
5.10 TUNNELING
It is a quantum mechanical effect in which particles have a finite probability of
crossing an energy barrier, such as the energy needed to break a bond with another
particle, even though the particle's energy is less than the energy barrier.
In classical mechanics, if E < V (the maximum height of the potential barrier), the
particle remains in the well forever; if E > V, the particle escapes.
In quantum mechanics, the situation is not so simple. The particle can escape even
if its energy E is below the height of the barrier V, although the probability of escape
is small unless E is close to V. In that case, the particle may tunnel through the
potential barrier and emerge with the same energy E.
Since the quantum dot is a tiny capacitor of capacitance , the charging time of the
capacitor is nothing but just the time constant.
Δt = 𝑅𝑡 𝐶 𝑑𝑜𝑡
…(5.45)
where is the tunneling resistance which is in series with the .
Now, allowing for maximum uncertainty in the energy stored on the capacitor, we
get the uncertainty in the energy stored on the capacitor is equal to the energy
stored on the capacitor itself, i.e.,
Δ 𝐸C = 𝐸𝐶
𝑒2
Δ 𝐸C = …(5.46)
2 𝐶 𝑑𝑜𝑡
The two conditions for isolating the quantum dots and / or preventing the quantum
dots from unwanted tunneling are.
𝑒2
≫ 𝑘𝐵 𝑇
2 𝐶 𝑑𝑜𝑡
h
𝑅𝑡 >
𝑒2
When the above conditions are met, and the voltage across the quantum dot is
scanned, then the current jumps in increments every time the voltage changes by
𝑒
Δ 𝑉 =
𝐶 𝑑𝑜𝑡
A transistor made from a quantum dot that controls the current from source to drain
one electron at a time is called single electron transistor (SET).
The single electron transistor (SET) is built like a conventional FET. The difference is
that instead of a semiconductor channel between the source and drain electrodes,
there is a quantum dot.
Working of Single Electron Transistor
1. SET in OFF mode. The corresponding potential energy diagram shows that it
is not energetically favorable for electrons in the source to tunnel to the dot
[Fig. 5.12 (a)].
2. SET in ON mode. At the lowest setting, i.e., electron tunnel one at a time from
the source to the drain via the quantum dot [Fig. 5.12 (b)].
4. Until the electron in the quantum dot leaves, no further electron can tunnel into
the quantum dot.
5. The electron then tunnels through the coulomb blockade on the other side to
reach the drain at the lower potential energy [Fig. 5.12 (d)].
6. With the dot being empty, the potential energy gets lowered again and the
process repeats [Fig. 5.12 (e)].
Quantum dots
Quantum dots are tiny particles or nano crystals of semiconducting material with
diameter in the range of 2-10 nm (10 to 50 atoms).
Quantum dot is a nanostructured semiconductor.
It has a size equal or less than the size of de Broglie wavelength (or mean free
path) of an electron within it .
We know in nanomaterial, energy levels are discrete.
Effective energy gap of a quantum dot is greater than the energy gap in bulk
material.
Energy gap can be modified by modifying the size of quantum dot
Fig. 5.13 Schematic
illustration of a quantum
dot laser based on self-
assembled dots
Fig. 5.14
Construction of QD
Laser
Construction of QD Laser
Typical Quantum dot laser consists of a nanostructured InGaAs semiconductor
sandwiched between two GaAs semiconductors. The various layers from the bottom
up are n-GaAs, n-GaAlAs, intrinsic – GaAs with InGaAs QDs, p-GaAlAs and p-GaAs.
There are metals contacts on substrate and cap layer connects the device to external
circuit. The QD laser is grown on n-GaAs substrate. The top p-metal has GaAs
contact layer. There are also a pair of 2μm thick Al0.85Ga0.15As cladding and the
cladding surrounds 1900 Å thick Al 0.05Ga0.95As waveguide. Highly reflecting ZnSe /
MgF2 coating for layers to increase stimulated emission for laser action are present.
The waveguide consists of a 300 Å thick GaAs with 12 monolayers of In 0.5Ga0.5As
QDs with density 1.5×10 10 cm-2. Quantum dots can have a pyramidal shape of the
order of 10 nm.
Fig. 5.14 shows a simple laser structure, consisting of an active layer
embedded in a waveguide, surrounded by layers of lower refractive index to ensure
light confinement.
The active material consists of quantum wells or quantum dots where the
bandgap is lower than that of the waveguide material. The active layer (QD or QW)
is embedded in an optical waveguide (material with refractive index smaller than
that of the active layer). Wavelength of the emitted light is determined by the
energy levels of the QD rather than the band-gap energy of the dot material.
Therefore, the emission wavelength can be tuned by changing the average size of
the dots. Because the band-gap of the QD material is lower than the band gap of the
surrounding medium we ensure carrier confinement. A structure like this, were
carrier confinement is realized separately from the confinement of the optical wave,
is called a separate-confinement heterostructure (SCH).
The waveguide formed between cladding layer pass laser to exit faces. Lasing
faces of waveguide are polished to form laser activity. Under forward biased
condition, it emits laser light.
Working
The bandgap of InGaAs is 0.76 eV.
The forward bias voltage enables in the electron and hole injection into intrinsic
GaAs layer (active layer) and into the QDs with small E g i.e. electrons migrate
from an n-type to quantum dots and holes migrate from a p-type to the quantum
dots.
Electron-hole recombination occurs , followed by lasing action. Stimulated
recombination of electron-hole pairs occurs with laser beam emission.
The difference in band gap EgGaAs < EgGaAlAs and the refractive index nGaAs > nGaAlAs
enables in light confinement and recombination of electrons and holes in the QDs.
The motion of electrons and holes is restricted and energy levels are discrete.
Laser emits photons of wavelength
Advantages
Wavelength can be modified with extremely small order by modifying the size of
the material
Ultrahigh temperature stability
Low threshold current density
Quantum dot lasers operate over a broad spectrum of wavelengths, from 400 nm
to 1.5 µm.
QD lasers can be switched on and off using less current, and in less time.
Disadvantage:
Applications
These computers are extremely sensitive and require very specific pressure
and temperature conditions and insulation to operate correctly. When these
machines interact with external particles, measurement errors and the erasure of
state overlaps occur, which is why they are sealed and have to be operated using
conventional computers. Quantum computers must have almost no atmospheric
pressure, an ambient temperature close to absolute zero (-273 °C) and insulation
from the earth's magnetic field to prevent the atoms from moving, colliding with
each other, or interacting with the environment. These systems only operate for very
short intervals of time, so that the information becomes damaged and cannot be
stored, making it even more difficult to recover data.
Finance: Companies would further optimise their investments and improve fraud
detection and simulation systems.
Healthcare: This sector would benefit from the development of new drugs and
genetically customised treatments, as well as DNA research.
Solution:
Given data: Band gap, = 2.8 eV
1. Introduction to Nanomaterials
After completing the course, students are instructed to take the following quiz to
quantify their understanding of the concepts on the nanomaterials.
1. https://forms.gle/M3fsKLeg1p38t9A7A
2. https://forms.gle/iJ4m9FJm8zY9e4pa9
RESULTS
Repeat your learning, if your score is less than 60%.
Congratulations, if your score is above 90%.
ASSIGNMENT
Define Moore’s law and connect the law to the continued miniaturising
in the electronics industry today.
Name the two approaches to the manufacture nanomaterials.
Compare the them.
How are small particle size and large surface area of nanoparticles
related to its properties and future applications?
Basics of Quantum Computing
What’s Next in Quantum Computing?
Quantum computing to new heights in the future
I hope the video helped you to understand more about the fascinating
capabilities of quantum computing. If you are hooked, you can actually
try a real quantum computer via the IBM Cloud. This is done through
the IBM Q Experience platform.
Write your own views on Quantum Computing and your experience with
the IBM Q Experience Platform.
Choose any one of the above mentioned topics and prepare a detailed
report.
PART A – QUESTIONS WITH ANSWERS
Quantum dots are tiny particles or nano crystals of semiconducting material with
diameter in the range of 2-10nm(10 to 50 atoms).
In ordinary material band gap will be smaller. For nanomaterial the band gap will be
greater.
A quantum dot laser is a semiconductor laser that uses quantum dots as the active
medium in its light emitting region.
7. What are the applications of the quantum dot laser? (CO5,K2)
It is defined as the number of available energy states per unit volume, per unit energy
in a solid.
9. Whether Fermi energy varies on material’s size? If yes or no, justify your
statement. (CO5,K2)
No, since electron density is the property of the materials, the Fermi energy does not
vary with material size.
10. What will happen to the band gap when the volume is reduced from that
of a solid to a nano material? (CO5,K2)
The band gap gets bigger as the material gets smaller. If the volume is reduced from
that of a solid to that of a nano material, the band gap will wider.
The effect achieved by reducing the volume of a solid so that energy level with in it
becomes discrete is called quantum confinement.
A quantum confined structure is one which the motion of the electron or holes is
confined in one or more directions by potential barriers.
13. Define the term ‘quantum well, quantum wire and quantum dot.
(April/May 2018) (CO5,K1)
• An electrically isolated region, like a thin film, where electrons are constrained in
one dimension and exhibiting quantum behavior is called quantum well.
14. List the applications of Quantum well, Quantum wire and Quantum
dot. (CO5,K2)
Quantum well
• They are now widely used to make semiconductor layer and other important
devices.
• They are used for infra-red imaging and photo detectors.
Quantum wire
• Quantum wires can be used for transistors.
• It is used in medical field. Nano bar codes are made different quantum wires of
different metals that have different reflectivity.
Quantum dots
• A quantum dot may be used as a basic building block in making a quantum
computer
• A quantum dot applications are blue laser diode, single electron transistor, light
emitting diode, etc.
2. Discuss density of states in quantum well, quantum wire and quantum dot.
(April/ May 2019) (CO5,K2)
4. Explain size dependence of Fermi energy and Energy band gap of nanomaterial.
(CO5,K2)
NPTEL COURSES
Coursera
Udemy
4. Nanotechnology: an Introduction
Clothing: When used in textiles, nanoparticles of silica can help to create fabrics
that repel water and other liquids. Silica can be added to fabrics either by being
incorporated into the fabric’s weave or sprayed onto the surface of the fabric to
create a waterproof or stainproof coating. So if you’ve ever noticed how liquid
forms little beads on waterproof clothing – beads that simply roll off the fabric
rather than being absorbed – that’s thanks to nanotechnology.
49
Computers: Without nanotechnology, we wouldn't have many of the electronics
we use in everyday life. Intel is undoubtedly a leader in tiny computer processors,
and the latest generation of Intel’s Core processor technology is a 10-nanometer
chip. When you think a nanometer is one-billionth of a meter, that’s incredibly
impressive!
50
CONTENT BEYOND THE SYLLABUS
2.Quantum of Conductance
https://nanohub.org/resources/632/download/2004.08.27-l03-ece453
.pdf
3.Carbon Nanotubes
https://www.nanowerk.com/nanotechnology/introduction/introductio
n_to_nanotechnology_22.php
PRESCRIBED TEXTBOOKS AND
REFERENCE BOOKS
TEXTBOOKS
REFERENCE BOOKS
Disclaimer:
This document is confidential and intended solely for the educational purpose of RMK Group of Educational
Institutions. If you have received this document through email in error, please notify the system manager. This
document contains proprietary information and is intended only to the respective group / learning community as
intended. If you are not the addressee you should not disseminate, distribute or copy through e-mail. Please notify
the sender immediately by e-mail if you have received this document by mistake and delete this document from
your system. If you are not the intended recipient you are notified that disclosing, copying, distributing or taking
any action in reliance on the contents of this information is strictly prohibited.