Micronas Hall

MICRONAS HAL501...
506, 508, 509,

HAL516...519, 523
Hall Effect Sensor Family
Edition Feb. 14, 2001

6251-109-4E
6251-485-2DS MICRONAS
HAL5xx
Contents
Page Section Title
3 1. Introduction
3 1.1. Features
3 1.2. Family Overview
4 1.3. Marking Code
4 1.3.1. Special Marking of Prototype Parts
4 1.4. Operating Junction Temperature Range
4 1.5. Hall Sensor Package Codes
4 1.6. Solderability
5 2. Functional Description
6 3. Specifications
6 3.1. Outline Dimensions
6 3.2. Dimensions of Sensitive Area
6 3.3. Positions of Sensitive Areas
7 3.4. Absolute Maximum Ratings
7 3.5. Recommended Operating Conditions
8 3.6. Electrical Characteristics
9 3.7. Magnetic Characteristics Overview
14 4. Type Descriptions
14 4.1. HAL501
16 4.2. HAL502
18 4.3. HAL503
20 4.4. HAL504
22 4.5. HAL505
24 4.6. HAL506
26 4.7. HAL508
28 4.8. HAL509
30 4.9. HAL516
32 4.10. HAL517
34 4.11. HAL518
36 4.12. HAL519
38 4.13. HAL523
40 5. Application Notes
40 5.1. Ambient Temperature
40 5.2. Extended Operating Conditions
40 5.3. Start-up Behavior
40 5.4. EMC
44 6. Data Sheet History
2 Micronas
HAL5xx
Hall Effect Sensor Family 1.2. Family Overview

in CMOS technology
The types differ according to the magnetic flux density
Release Notes: Revision bars indicate significant values for the magnetic switching points, the tempera-
changes to the previous edition. ture behavior of the magnetic switching points, and the
mode of switching.
1. Introduction
The HAL5xx family consists of different Hall switches Type Switching Sensitivity see
produced in CMOS technology. All sensors include a Behavior Page
temperature-compensated Hall plate with active offset
compensation, a comparator, and an open-drain output 501 bipolar very high 14
transistor. The comparator compares the actual mag- 502 latching high 16
netic flux through the Hall plate (Hall voltage) with the
fixed reference values (switching points). Accordingly, 503 latching medium 18
the output transistor is switched on or off.
504 unipolar medium 20
The sensors of this family differ in the switching behavior
and the switching points. 505 latching low 22
The active offset compensation leads to constant mag- 506 unipolar high 24
netic characteristics over supply voltage and tempera-
508 unipolar medium 26
ture range. In addition, the magnetic parameters are ro-
bust against mechanical stress effects. 509 unipolar low 28
The sensors are designed for industrial and automotive 516 unipolar with high 30
applications and operate with supply voltages from inverted output
3.8 V to 24 V in the ambient temperature range from
–40 °C up to 150 °C. 517 unipolar with medium 32
inverted output
All sensors are available in a SMD-package (SOT-89B)
and in a leaded version (TO-92UA). 518 unipolar with medium 34
inverted output
1.1. Features: 519 unipolar with high 36

inverted output
– switching offset compensation at typically 62 kHz (north polarity)
– operates from 3.8 V to 24 V supply voltage 523 unipolar low 38
– overvoltage protection at all pins
– reverse-voltage protection at VDD-pin
– magnetic characteristics are robust against mechani- Latching Sensors:
cal stress effects
– short-circuit protected open-drain output by thermal The output turns low with the magnetic south pole on the
shut down branded side of the package and turns high with the
magnetic north pole on the branded side. The output
– operates with static magnetic fields and dynamic mag- does not change if the magnetic field is removed. For
netic fields up to 10 kHz changing the output state, the opposite magnetic field
– constant switching points over a wide supply voltage polarity must be applied.
range
– the decrease of magnetic flux density caused by rising Bipolar Switching Sensors:
temperature in the sensor system is compensated by
a built-in negative temperature coefficient of the mag- The output turns low with the magnetic south pole on the
netic characteristics branded side of the package and turns high with the
– ideal sensor for applications in extreme automotive state is not defined for all sensors if the magnetic field is
and industrial environments removed again. Some sensors will change the output
– EMC corresponding to DIN 40839 state and some sensors will not.
Micronas 3
HAL5xx
Unipolar Switching Sensors: for lab experiments and design-ins but are not intended to
be used for qualification tests or as production parts.
The output turns low with the magnetic south pole on the
branded side of the package and turns high if the mag-
netic field is removed. The sensor does not respond to 1.4. Operating Junction Temperature Range
the magnetic north pole on the branded side.
A: TJ = –40 °C to +170 °C
K: TJ = –40 °C to +140 °C
Unipolar Switching Sensors with Inverted Output:
E: TJ = –40 °C to +100 °C
The output turns high with the magnetic south pole on
The Hall sensors from Micronas are specified to the chip
the branded side of the package and turns low if the
temperature (junction temperature TJ).
magnetic field is removed. The sensor does not respond
to the magnetic north pole on the branded side.
The relationship between ambient temperature (TA) and
junction temperature is explained in section 5.1. on page
Unipolar Switching Sensors with Inverted Output 40.
Sensitive to North Pole:
1.5. Hall Sensor Package Codes
The output turns high with the magnetic north pole on the
branded side of the package and turns low if the magnet- HALXXXPA-T
ic field is removed. The sensor does not respond to the
Temperature Range: A, K, or E
magnetic south pole on the branded side.
Package: SF for SOT-89B
UA for TO-92UA
1.3. Marking Code Type: 5xx
All Hall sensors have a marking on the package surface

(branded side). This marking includes the name of the Example: HAL505UA-E
sensor and the temperature range.
→ Type: 505
→ Package: TO-92UA
Type Temperature Range → Temperature Range: TJ = –40 °C to +100 °C
A K E Hall sensors are available in a wide variety of packaging
HAL501 501A 501K 501E versions and quantities. For more detailed information,
please refer to the brochure: “Ordering Codes for Hall
HAL502 502A 502K 502E Sensors”.
HAL503 503A 503K 503E
HAL504 504A 504K 504E 1.6. Solderability
HAL505 505A 505K 505E all packages: according to IEC68-2-58

HAL506 506A 506K 506E
During soldering reflow processing and manual rework-
HAL508 508A 508K 508E ing, a component body temperature of 260 °C should
not be exceeded.
HAL509 509A 509K 509E
HAL516 516A 516K 516E Components stored in the original packaging should
provide a shelf life of at least 12 months, starting from the
HAL517 517A 517K 517E date code printed on the labels, even in environments as
HAL518 518A 518K 518E
extreme as 40 °C and 90% relative humidity.
VDD
HAL519 519A 519K 519E 1
HAL523 523A 523K 523E

OUT
3
1.3.1. Special Marking of Prototype Parts

2
Prototype parts are coded with an underscore beneath the GND
temperature range letter on each IC. They may be used
Fig. 1–1: Pin configuration
4 Micronas
HAL5xx
2. Functional Description HAL5xx

HAL5xx
VDD Reverse Temperature Short Circuit &
The HAL 5xx sensors are monolithic integrated circuits Voltage & Dependent
Hysteresis
Control
Overvoltage
1 Overvoltage Bias Protection
which switch in response to magnetic fields. If a Protection
magnetic field with flux lines perpendicular to the
sensitive area is applied to the sensor, the biased Hall Hall Plate
Comparator OUT
plate forces a Hall voltage proportional to this field. The Switch Output
Hall voltage is compared with the actual threshold level 3
in the comparator. The temperature-dependent bias

increases the supply voltage of the Hall plates and
adjusts the switching points to the decreasing induction
Clock
of magnets at higher temperatures. If the magnetic field
exceeds the threshold levels, the open drain output GND
switches to the appropriate state. The built-in hysteresis 2
eliminates oscillation and provides switching behavior of
output without bouncing.
Fig. 2–1: HAL5xx block diagram
Magnetic offset caused by mechanical stress is com-
pensated for by using the “switching offset compensa-
tion technique”. Therefore, an internal oscillator pro-
vides a two phase clock. The Hall voltage is sampled at fosc
the end of the first phase. At the end of the second
phase, both sampled and actual Hall voltages are aver-
aged and compared with the actual switching point. Sub-
sequently, the open drain output switches to the ap- t
propriate state. The time from crossing the magnetic
switching level to switching of output can vary between B
zero and 1/fosc.
BON
Shunt protection devices clamp voltage peaks at the

Output-Pin and VDD-Pin together with external series t
resistors. Reverse current is limited at the VDD-Pin by an VOUT
internal series resistor up to –15 V. No external reverse VOH
protection diode is needed at the VDD-Pin for reverse
VOL
voltages ranging from 0 V to –15 V.
t
IDD
1/fosc = 16 µs tf t
Fig. 2–2: Timing diagram
Micronas 5
HAL5xx
3. Specifications
3.1. Outline Dimensions

sensitive area sensitive area
4.55 1.5 4.06 ±0.1
∅ 0.2 ∅ 0.4
0.15 1.7 0.3
0.3 2 y y
3.05 ±0.1
4 ±0.2 2.55
3.1 ±0.2
min. 0.48
0.25 top view
1 2 3
0.55 1 2 3
0.4 0.4
0.75 ±0.2
1.15 14.0
0.36 min.
0.4
1.5
0.42
3.0
1.27 1.27
branded side
2.54
0.06 ±0.04 branded side

SPGS0022-5-A3/2E
Fig. 3–1: 45° 0.8

Plastic Small Outline Transistor Package SPGS7002-9-A/2E
(SOT-89B)
Weight approximately 0.035 g Fig. 3–2:
Dimensions in mm Plastic Transistor Single Outline Package
(TO-92UA)
Weight approximately 0.12 g
Dimensions in mm
3.2. Dimensions of Sensitive Area Note: For all package diagrams, a mechanical tolerance
of ±0.05 mm applies to all dimensions where no tolerance
0.25 mm x 0.12 mm is explicitly given.
3.3. Positions of Sensitive Areas An improvement of the TO-92UA package with reduced
tolerances will be introduced end of 2001.
SOT-89B TO-92UA
x center of center of
the package the package
y 0.95 mm nominal 1.0 mm nominal
6 Micronas
HAL5xx
3.4. Absolute Maximum Ratings
Symbol Parameter Pin No. Min. Max. Unit
VDD Supply Voltage 1 –15 281) V
–VP Test Voltage for Supply 1 –242) – V
–IDD Reverse Supply Current 1 – 501) mA
IDDZ Supply Current through 1 –2003) 2003) mA

Protection Device
VO Output Voltage 3 –0.3 281) V
IO Continuous Output On Current 3 – 501) mA
IOmax Peak Output On Current 3 – 2503) mA
IOZ Output Current through 3 –2003) 2003) mA

Protection Device
TS Storage Temperature Range5) –65 150 °C
TJ Junction Temperature Range –40 150 °C

–40 1704)
1) as long as TJmax is not exceeded
2) with a 220 Ω series resistance at pin 1 corresponding to the test circuit on page 40
3) t < 2 ms
4) t < 1000h
5) Components stored in the original packaging should provide a shelf life of at least 12 months, starting from the
date code printed on the labels, even in environments as extreme as 40 °C and 90% relative humidity.
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the
“Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute maxi-
mum ratings conditions for extended periods may affect device reliability.
3.5. Recommended Operating Conditions
Symbol Parameter Pin No. Min. Max. Unit
VDD Supply Voltage 1 3.8 24 V
IO Continuous Output On Current 3 0 20 mA
VO Output Voltage 3 0 24 V
(output switched off)
Micronas 7
HAL5xx
3.6. Electrical Characteristics at TJ = –40 °C to +170 °C , VDD = 3.8 V to 24 V, as not otherwise specified in Conditions
Typical Characteristics for TJ = 25 °C and VDD = 12 V
Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions
IDD Supply Current 1 2.3 3 4.2 mA TJ = 25 °C
IDD Supply Current over 1 1.6 3 5.2 mA

Temperature Range
VDDZ Overvoltage Protection 1 – 28.5 32 V IDD = 25 mA, TJ = 25 °C,

at Supply t = 20 ms
VOZ Overvoltage Protection at Output 3 – 28 32 V IOH = 25 mA, TJ = 25 °C,

t = 20 ms
VOL Output Voltage 3 – 130 280 mV IOL = 20 mA, TJ = 25 °C
VOL Output Voltage over 3 – 130 400 mV IOL = 20 mA

Temperature Range
IOH Output Leakage Current 3 – 0.06 0.1 µA Output switched off,

TJ = 25 °C, VOH = 3.8 to 24 V
IOH Output Leakage Current over 3 – – 10 µA Output switched off,

Temperature Range TJ ≤150 °C, VOH = 3.8 to 24 V
fosc Internal Oscillator – 49 62 – kHz TJ = 25 °C,

Chopper Frequency VDD = 4.5 V to 24 V
fosc Internal Oscillator Chopper Fre- – 38 62 – kHz

quency over Temperature Range
ten(O) Enable Time of Output after 1 – 30 70 µs VDD = 12 V 1)

Setting of VDD
tr Output Rise Time 3 – 75 400 ns VDD = 12 V, RL = 820 Ohm,

CL = 20 pF
tf Output Fall Time 3 – 50 400 ns VDD = 12 V, RL = 820 Ohm,

CL = 20 pF
RthJSB Thermal Resistance Junction – – 150 200 K/W Fiberglass Substrate

case to Substrate Backside 30 mm x 10 mm x 1.5mm,
SOT-89B pad size see Fig. 3–3
RthJA Thermal Resistance Junction – – 150 200 K/W

case to Soldering Point
TO-92UA
1) B > BON + 2 mT or B < BOFF – 2 mT for HAL 50x, B > BOFF + 2 mT or B < BON – 2 mT for HAL 51x
5.0
2.0
2.0
1.0
Fig. 3–3: Recommended pad size SOT-89B

Dimensions in mm
8 Micronas
HAL5xx
3.7. Magnetic Characteristics Overview at TJ = –40 °C to +170 °C, VDD = 3.8 V to 24 V,

Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.

Positive flux density values refer to the magnetic south pole at the branded side of the package.
Sensor Parameter On point BON Off point BOFF Hysteresis BHYS Unit
Switching type TJ Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
HAL 501 –40 °C –0.8 0.6 2.5 –2.5 –0.8 0.8 0.5 1.4 2 mT
bipolar 25 °C –0.5 0.5 2.3 –2.3 –0.7 0.5 0.5 1.2 1.9 mT
170 °C –1.5 0.7 3 –2.5 –0.2 2 0.4 0.9 1.8 mT
HAL 502 –40 °C 1 2.8 5 –5 –2.8 –1 4.5 5.6 7.2 mT
latching 25 °C 1 2.6 4.5 –4.5 –2.6 –1 4.5 5.2 7 mT
170 °C 0.9 2.3 4.3 –4.3 –2.3 –0.9 3.5 4.6 6.8 mT
HAL 503 –40 °C 6.4 8.6 10.8 –10.8 –8.6 –6.4 14.6 17.2 20.6 mT
latching 25 °C 6 8 10 –10 –8 –6 13.6 16 18 mT
170 °C 4 6.4 8.9 –8.9 –6 –4 11 12.4 16 mT
HAL 504 –40 °C 10.3 13 15.7 5.3 7.5 9.6 4.4 5.5 6.5 mT
unipolar 25 °C 9.5 12 14.5 5 7 9 4 5 6.5 mT
170 °C 8.5 10.2 13.7 4.2 5.9 8.5 3.2 4.3 6.4 mT
HAL 505 –40 °C 11.8 15 18.3 –18.3 –15 –11.8 26 30 34 mT
latching 25 °C 11 13.5 17 –17 –13.5 –11 24 27 32 mT
170 °C 9.4 11.7 16.1 –16.1 –11.7 –9.4 20 23.4 31.3 mT
HAL 506 –40 °C 4.3 5.9 7.7 2.1 3.8 5.4 1.6 2.1 2.8 mT
unipolar 25 °C 3.8 5.5 7.2 2 3.5 5 1.5 2 2.7 mT
170 °C 3.2 4.6 6.8 1.7 3 5.2 0.9 1.6 2.6 mT
HAL 508 –40 °C 15.5 19 21.9 14 16.7 20 1.6 2.3 2.8 mT
unipolar 25 °C 15 18 20.7 13.5 16 19 1.5 2 2.7 mT
170 °C 12.7 15.3 20 11.4 13.6 18.3 1 1.7 2.6 mT
HAL 509 –40 °C 23.1 27.4 31.1 19.9 23.8 27.2 2.9 3.6 3.9 mT
unipolar 25 °C 23.1 26.8 30.4 19.9 23.2 26.6 2.8 3.5 3.9 mT
170 °C 21.3 25.4 28.9 18.3 22.1 25.3 2.5 3.3 3.8 mT
HAL 516 –40 °C 2.1 3.8 5.4 4.3 5.9 7.7 1.6 2.1 2.8 mT
unipolar 25 °C 2 3.5 5 3.8 5.5 7.2 1.5 2 2.7 mT
inverted 170 °C 1.7 3 5.2 3.2 4.6 6.8 0.9 1.6 2.6 mT
HAL 517 –40 °C 14 17.1 21.5 15.5 19.6 22.5 1.6 2.5 3 mT
unipolar 25 °C 13.5 16.2 19 15 18.3 20.7 1.5 2.1 2.7 mT
inverted 170 °C 9 12.3 18 10.5 13.7 20 0.8 1.4 2.4 mT
HAL 518 –40 °C 14 16.7 20 15.5 19 22 1.5 2.3 3 mT
unipolar 25 °C 13.5 16 19 15 18 20.7 1.4 2 2.8 mT
inverted 170 °C 11 13.6 18.3 12.2 15.3 20 0.8 1.7 2.6 mT
Note: For detailed descriptions of the individual types, see pages 14 and following.
Micronas 9
HAL5xx
Magnetic Characteristics Overview, continued
Sensor Parameter On point BON Off point BOFF Hysteresis BHYS Unit
Switching type TJ Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
HAL 519 –40 °C –5.4 –3.8 –2.1 –7.7 –5.9 –4.3 1.6 2.1 2.8 mT
unipolar 25 °C –5 –3.6 –2 –7.2 –5.5 –3.8 1.5 1.9 2.7 mT
inverted 170 °C –5.2 –3.0 –1.5 –6.8 –4.6 –2.8 0.9 1.6 2.6 mT
HAL 523 –40 °C 28 34.5 42 18 24 30 7 10.5 14 mT
unipolar 25 °C 28 34.5 42 18 24 30 7 10.5 14 mT
170 °C 28 34.5 42 18 24 30 7 10.5 14 mT
Note: For detailed descriptions of the individual types, see pages 14 and following.
mA HAL 5xx mA HAL 5xx

25 5.0
4.5
20
IDD TA = –40 °C IDD 4.0
TA = –40 °C
15
TA = 25 °C
3.5
TA=170 °C TA = 25 °C
10
3.0
TA = 100 °C
5 2.5
TA = 170 °C
2.0
0
1.5
–5
1.0
–10
0.5
–15 0
–15–10 –5 0 5 10 15 20 25 30 35 V 1 2 3 4 5 6 7 8 V
VDD VDD
Fig. 3–4: Typical supply current Fig. 3–5: Typical supply current
versus supply voltage versus supply voltage
10 Micronas
HAL5xx
mA HAL 5xx kHz HAL 5xx

5 100
90
IDD 4 fosc 80
70
VDD = 24 V
TA = 25 °C
VDD = 12 V
3 60
TA = –40 °C
50 TA = 170 °C
2 40
VDD = 3.8 V
30
1 20
10
0 0
–50 0 50 100 150 200 °C 0 5 10 15 20 25 30 V
TA VDD
Fig. 3–6: Typical supply current Fig. 3–8: Typ. Internal chopper frequency
versus ambient temperature versus supply voltage
kHz HAL 5xx kHz HAL 5xx

100 100
90 90
fosc 80 fosc 80
70 VDD = 3.8 V 70
TA = 25 °C
60 60 TA = –40 °C
50 50
VDD = 4.5 V...24 V TA = 170 °C
40 40
30 30
20 20
10 10
0 0
–50 0 50 100 150 200 °C 3 3.5 4.0 4.5 5.0 5.5 6.0 V
TA VDD
Fig. 3–7: Typ. internal chopper frequency Fig. 3–9: Typ. internal chopper frequency
versus ambient temperature versus supply voltage
Micronas 11
HAL5xx
mV HAL 5xx mV HAL 5xx

400 400
IO = 20 mA IO = 20 mA
350
VDD = 3.8 V
VOL VOL
300 300
VDD = 4.5 V
TA = 170 °C VDD = 24 V
250
TA = 100 °C
200 200
150 TA = 25 °C
TA = –40 °C
100 100
50
0 0
0 5 10 15 20 25 30 V –50 0 50 100 150 200 °C
VDD TA
Fig. 3–10: Typical output low voltage Fig. 3–12: Typical output low voltage
versus supply voltage versus ambient temperature
mV HAL 5xx mA HAL 5xx

600 104
IO = 20 mA
103
500
VOL IOH 102
TA = 170 °C
101
400 TA = 150 °C
100
TA = 100 °C
300 10–1
TA = 170 °C
10–2
TA =100 °C
200 TA = 25 °C
10–3
TA = 25 °C
TA = –40 °C 10–4
100 TA = –40 °C
10–5
0 10–6
3 3.5 4.0 4.5 5.0 5.5 6.0 V 15 20 25 30 35 V
VDD VOH
Fig. 3–11: Typical output low voltage Fig. 3–13: Typical output high current
versus supply voltage versus output voltage
12 Micronas
HAL5xx
µA HAL 5xx dBµV HAL 5xx

102 80
VP = 12 V
TA = 25 °C
70
101 Quasi-Peak-
IOH VDD Measurement
VOH = 24 V test circuit 2
60
100
50
10–1 max. spurious
signals
VOH = 3.8 V 40
10–2
30
10–3
20
10–4
10
10–5 0
–50 0 50 100 150 200 °C 0.01 0.10 1.00
1 10.00
10 100.00
100 1000.00
1000 MHz
TA f
Fig. 3–14: Typical output leakage current Fig. 3–16: Typ. spectrum at supply voltage
versus ambient temperature
dBµA HAL 5xx

30
VDD = 12 V
TA = 25 °C
Quasi-Peak-
20 Measurement
IDD
max. spurious
signals
10
–10
–20
–30
0.01 0.10 1.00
1 10.00
10 100.00
100 1000.00
1000 MHz
Fig. 3–15: Typ. spectrum of supply current
Micronas 13
HAL501
4. Type Description Applications
4.1. HAL 501 The HAL 501 is the optimal sensor for all applications
with alternating magnetic signals and weak magnetic
The HAL 501 is the most sensitive sensor of this family amplitude at the sensor position such as:
with bipolar switching behavior (see Fig. 4–1). – applications with large airgap or weak magnets,
The output turns low with the magnetic south pole on the – rotating speed measurement,
branded side of the package and turns high with the – CAM shaft sensors, and
state is not defined for all sensors if the magnetic field is – magnetic encoders.
removed again. Some sensors will change the output
state and some sensors will not.
Output Voltage
For correct functioning in the application, the sensor re-
quires both magnetic polarities (north and south) on the VO
branded side of the package.
BHYS
Magnetic Features:
– switching type: bipolar VOL

– very high sensitivity
BOFF 0 BON B
– typical BON: 0.5 mT at room temperature
Fig. 4–1: Definition of magnetic switching points for
– typical BOFF: –0.7 mT at room temperature
the HAL 501
– operates with static magnetic fields and dynamic mag-
netic fields up to 10 kHz
Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 3.8 V to 24 V,


Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset BOFFSET Unit
TJ Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
–40 °C –0.8 0.6 2.5 –2.5 –0.8 0.8 0.5 1.4 2 –0.1 mT
25 °C –0.5 0.5 2.3 –2.3 –0.7 0.5 0.5 1.2 1.9 –1.4 –0.1 1.4 mT
100 °C –0.9 0.5 2.5 –2.5 –0.6 0.9 0.5 1.1 1.8 0 mT
140 °C –1.2 0.6 2.8 –2.5 –0.5 1.3 0.5 1.1 1.8 0 mT
170 °C –1.5 0.7 3 –2.5 –0.2 2 0.4 0.9 1.8 0.2 mT
The hysteresis is the difference between the switching points BHYS = BON – BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
14 Micronas
HAL501
mT HAL 501 mT HAL 501

3 3 BONmax
BON BON
BOFF 2 BOFF 2
BOFFmax
1 1
BON
BONtyp
0 0
BOFFtyp
–1 –1
BOFF
TA = –40 °C BONmin
VDD = 3.8 V
TA = 25 °C VDD = 4.5 V... 24 V
–2 –2
TA = 100 °C
BOFFmin
TA = 170 °C
–3 –3
0 5 10 15 20 25 30 V –50 0 50 100 150 200 °C
VDD TA, TJ
Fig. 4–2: Typ. magnetic switching points Fig. 4–4: Magnetic switching points
versus supply voltage versus temperature
Note: In the diagram “Magnetic switching points versus

temperature” the curves for BONmin, BONmax,
mT BOFFmin, and BOFFmax refer to junction temperature,
HAL 501
3 whereas typical curves refer to ambient temperature.
BON
BOFF 2
1 BON
–1 BOFF
TA = –40 °C
TA = 25 °C
–2
TA = 100 °C
TA = 170 °C
–3
3 3.5 4.0 4.5 5.0 5.5 6.0 V
VDD
Fig. 4–3: Typ. magnetic switching points

versus supply voltage
Micronas 15
HAL502
4.2. HAL 502 Applications
The HAL 502 is the most sensitive latching sensor of this The HAL 502 is the optimal sensor for all applications
family (see Fig. 4–5). with alternating magnetic signals and weak magnetic
amplitude at the sensor position such as:
– applications with large airgap or weak magnets,
branded side of the package and turns high with the
magnetic north pole on the branded side. The output – rotating speed measurement,
does not change if the magnetic field is removed. For
– commutation of brushless DC motors,
changing the output state, the opposite magnetic field
polarity must be applied. – CAM shaft sensors, and
– magnetic encoders.
quires both magnetic polarities (north and south) on the
Output Voltage
Magnetic Features: VO
– switching type: latching
BHYS
– high sensitivity
VOL
– operates with static magnetic fields and dynamic mag- BOFF 0 BON B
– typical temperature coefficient of magnetic switching the HAL 502
points is –1000 ppm/K


Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
–40 °C 1 2.8 5 –5 –2.8 –1 4.5 5.6 7.2 0 mT
25 °C 1 2.6 4.5 –4.5 –2.6 –1 4.5 5.2 7 –1.5 0 1.5 mT
100 °C 0.95 2.5 4.4 –4.4 –2.5 –0.95 4 5 6.8 0 mT
140 °C 0.9 2.4 4.3 –4.3 –2.4 –0.9 3.7 4.8 6.8 0 mT
170 °C 0.9 2.3 4.3 –4.3 –2.3 –0.9 3.5 4.6 6.8 0 mT
16 Micronas
HAL502

6 6
BONmax
BON BON
BOFF 4 BOFF 4
BON
BONtyp
2 2
TA = –40 °C BONmin
TA = 25 °C VDD = 3.8 V
0 0
TA = 100 °C VDD = 4.5 V... 24 V
TA = 170 °C BOFFmax
–2 –2
BOFFtyp
BOFF
–4 –4
BOFFmin
–6 –6
0 5 10 15 20 25 30 V –50 0 50 100 150 200 °C
VDD TA, TJ

HAL 502
BON
4
BOFF
BON
TA = –40 °C
TA = 25 °C
0
TA = 100 °C
TA = 170 °C
–2
BOFF
–4
–6
3 3.5 4.0 4.5 5.0 5.5 6.0 V
VDD

Micronas 17
HAL503
The HAL 503 is a latching sensor (see Fig. 4–9). The HAL 503 is the optimal sensor for applications with
alternating magnetic signals such as:
– multipole magnet applications,
– commutation of brushless DC motors, and
polarity must be applied. – window lifter.

branded side of the package. Output Voltage
VO
Magnetic Features:
BHYS
– medium sensitivity
VOL
– typical BOFF: –7.6 mT at room temperature BOFF 0 BON B
– operates with static magnetic fields and dynamic mag- Fig. 4–9: Definition of magnetic switching points for
netic fields up to 10 kHz the HAL 503
– typical temperature coefficient of magnetic switching


–40 °C 6.4 8.4 10.8 –10.8 –8.6 –6.4 14.6 17 20.6 –0.1 mT
25 °C 6 7.6 10 –10 –7.6 –6 13.6 15.2 18 –1.5 0 1.5 mT
100 °C 4.8 7.1 9.5 –9.5 –6.9 –4.8 12.3 14 17 0.1 mT
140 °C 4.4 6.7 9.2 –9.2 –6.4 –4.4 11.5 13.1 16.5 0.1 mT
170 °C 4 6.4 8.9 –8.9 –6 –4 11 12.4 16 0.2 mT
18 Micronas
HAL503

12 12
BONmax
BON BON BON
BOFF 8 BOFF 8
BONtyp
4 4 BONmin
TA = –40 °C
TA = 25 °C VDD = 3.8 V
0 0
TA = 100 °C VDD = 4.5 V... 24 V
TA = 170 °C
–4 –4 BOFFmax
BOFFtyp
–8 –8
BOFF
BOFFmin
–12 –12
0 5 10 15 20 25 30 V –50 0 50 100 150 200 °C
VDD TA, TJ

ambient temperature” the curves for BONmin, BONmax,
HAL 503
BON BON
BOFF 8
4
TA = –40 °C
TA = 25 °C
0
TA = 100 °C
TA = 170 °C
–4
–8
BOFF
–12
3 3.5 4.0 4.5 5.0 5.5 6.0 V
VDD

Micronas 19
HAL504
The HAL 504 is a unipolar switching sensor (see The HAL 504 is the optimal sensor for applications with
Fig. 4–13). one magnetic polarity such as:
– solid state switches,
branded side of the package and turns high if the mag- – contactless solution to replace micro switches,
netic field is removed. The sensor does not respond to
– position and end-point detection, and
– rotating speed measurement.
quires only the magnetic south pole on the branded side
of the package.
Output Voltage
VO
Magnetic Features:
– switching type: unipolar BHYS
– typical BON: 12 mT at room temperature VOL
– typical BOFF: 7 mT at room temperature 0 BOFF BON B

netic fields up to 10 kHz Fig. 4–13: Definition of magnetic switching points for
the HAL 504


–40 °C 10.3 13 15.7 5.3 7.5 9.6 4.4 5.5 6.5 10.2 mT
25 °C 9.5 12 14.5 5 7 9 4 5 6.5 7.2 9.5 11.8 mT
100 °C 9 11.1 14.1 4.6 6.4 8.7 3.6 4.7 6.4 8.8 mT
140 °C 8.7 10.6 13.9 4.4 6.1 8.6 3.4 4.5 6.4 8.4 mT
170 °C 8.5 10.2 13.7 4.2 5.9 8.5 3.2 4.3 6.4 8 mT
20 Micronas
HAL504

18 18
16 16
BON BON
BOFF BOFF BONmax
14 14
BON
12 12
BONtyp
10 10 BONmin
8 8 BOFFmax
6 6 BOFFtyp
BOFF
TA = –40 °C
4 4 BOFFmin
TA = 25 °C
TA = 100 °C VDD = 3.8 V
2 2
TA = 170 °C VDD = 4.5 V... 24 V
0 0
0 5 10 15 20 25 30 V –50 0 50 100 150 200 °C
VDD TA, TJ

HAL 504
16
BON
BOFF
14
BON
12
10
6
BOFF
TA = –40 °C
4
TA = 25 °C
TA = 100 °C
2
TA = 170 °C
0
3 3.5 4.0 4.5 5.0 5.5 6.0 V
VDD

Micronas 21
HAL505
The HAL 505 is a latching sensor (see Fig. 4–17). The HAL 505 is the optimal sensor for applications with
alternating magnetic signals such as:
– multipole magnet applications,
– commutation of brushless DC motors, and
polarity must be applied. – window lifter.

branded side of the package. Output Voltage
VO
Magnetic Features:
BHYS
– low sensitivity
VOL
– typical BOFF: –13.5 mT at room temperature BOFF 0 BON B
– operates with static magnetic fields and dynamic mag- Fig. 4–17: Definition of magnetic switching points for
netic fields up to 10 kHz the HAL 505


–40 °C 11.8 15 18.3 –18.3 –15 –11.8 26 30 34 0 mT
25 °C 11 13.5 17 –17 –13.5 –11 24 27 32 –1.5 0 1.5 mT
100 °C 10.2 12.4 16.6 –16.6 –12.4 –10.2 22 24.8 31.3 0 mT
140 °C 9.7 12 16.3 –16.3 –12 –9.7 21 24.2 31.3 0 mT
170 °C 9.4 11.7 16.1 –16.1 –11.7 –9.4 20 23.4 31.3 0 mT
22 Micronas
HAL505

20 20
BONmax
BON
BON 15 BON 15
BOFF BOFF BONtyp
10 10
BONmin
5 5
TA = –40 °C VDD = 3.8 V
TA = 25 °C VDD = 4.5 V... 24 V
0 0
TA = 100 °C
TA = 170 °C
–5 –5
BOFF BOFFmax
–10 –10
BOFFtyp
–15 –15
BOFFmin
–20 –20
0 5 10 15 20 25 30 V –50 0 50 100 150 200 °C
VDD TA, TJ

HAL 505
BON
15
BON
BOFF
10
5
TA = –40 °C
TA = 25 °C
0
TA = 100 °C
TA = 170 °C
–5
BOFF
–10
–15
–20
3 3.5 4.0 4.5 5.0 5.5 6.0 V
VDD

Micronas 23
HAL506
The HAL 506 is the most sensitive unipolar switching The HAL 506 is the optimal sensor for all applications
sensor of this family (see Fig. 4–21). with one magnetic polarity and weak magnetic ampli-
tude at the sensor position such as:
netic field is removed. The sensor does not respond to – solid state switches,
– contactless solution to replace micro switches,
For correct functioning in the application, the sensor re- – position and end point detection, and
of the package.
In the HAL 5xx family, the HAL 516 is a sensor with the
same magnetic characteristics but with an inverted out- Output Voltage
put characteristic. VO
Magnetic Features: BHYS
– switching type: unipolar

– high sensitivity VOL
– typical BON: 5.5 mT at room temperature 0 BOFF BON B

– typical BOFF: 3.5 mT at room temperature
– operates with static magnetic fields and dynamic mag- the HAL 506


–40 °C 4.3 5.9 7.7 2.1 3.8 5.4 1.6 2.1 2.8 4.8 mT
25 °C 3.8 5.5 7.2 2 3.5 5 1.5 2 2.7 3.8 4.5 6.2 mT
100 °C 3.6 5.1 7 1.9 3.3 4.9 1.2 1.8 2.6 4.2 mT
140 °C 3.4 4.8 6.9 1.8 3.1 5.1 1 1.7 2.6 4 mT
170 °C 3.2 4.6 6.8 1.7 3 5.2 0.9 1.6 2.6 3.8 mT
24 Micronas
HAL506

8 8
BONmax
BON 7 BON 7
BOFF BOFF
BON
6 6
5 5 BONtyp
BOFFmax
4 4 BONmin
BOFFtyp
3 3
TA = –40 °C BOFF
TA = 25 °C BOFFmin
2 2
TA = 100 °C
TA = 170 °C VDD = 3.8 V
1 1
VDD = 4.5 V... 24 V
0 0
0 5 10 15 20 25 30 V –50 0 50 100 150 200 °C
VDD TA, TJ

HAL 506
7
BON
BOFF BON
6
3
BOFF
TA = –40 °C
2
TA = 25 °C
TA = 100 °C
1
TA = 170 °C
0
3 3.5 4.0 4.5 5.0 5.5 6.0 V
VDD

Micronas 25
HAL508
Fig. 4–25). one magnetic polarity such as:
branded side of the package and turns high if the mag- – contactless solution to replace micro switches,
netic field is removed. The sensor does not respond to
– position and end point detection, and
of the package.
Output Voltage
In the HAL 5xx family, the HAL 518 is a sensor with the VO
same magnetic characteristics but with an inverted out-
put characteristic. BHYS
Magnetic Features: VOL

0 BOFF BON B
– typical BON: 18 mT at room temperature Fig. 4–25: Definition of magnetic switching points for
the HAL 508
– typical BOFF: 16 mT at room temperature


–40 °C 15.5 19 21.9 14 16.7 20 1.6 2.3 2.8 17.8 mT
25 °C 15 18 20.7 13.5 16 19 1.5 2 2.7 14 17 20 mT
100 °C 13.9 16.6 20.4 12.5 14.8 18.7 1.2 1.8 2.6 15.7 mT
140 °C 13.2 15.8 20.2 11.9 14.1 18.5 1.1 1.7 2.6 15 mT
170 °C 12.7 15.3 20 11.4 13.6 18.3 1 1.7 2.6 14.4 mT
26 Micronas
HAL508

25 25
BON BON BONmax

BOFF 20 BON BOFF 20
BOFFmax
BONtyp
15 15
BOFFtyp
BOFF BONmin
BOFFmin
10 10
TA = –40 °C
TA = 25 °C
TA = 100 °C VDD = 3.8 V
5 5
TA = 170 °C VDD = 4.5 V... 24 V
0 0
0 5 10 15 20 25 30 V –50 0 50 100 150 200 °C
VDD TA, TJ

HAL 508
BON
BOFF 20 BON
15
BOFF
10
TA = –40 °C
TA = 25 °C
TA = 100 °C
5
TA = 170 °C
0
3 3.5 4.0 4.5 5.0 5.5 6.0 V
VDD

Micronas 27
HAL509
Fig. 4–29). one magnetic polarity and strong magnetic fields at the
sensor position such as:
netic field is removed. The sensor does not respond to – contactless solution to replace micro switches,
For correct functioning in the application, the sensor re- – rotating speed measurement.
of the package.
Output Voltage
BHYS
– low sensitivity
VOL
– operates with static magnetic fields and dynamic mag- 0 BOFF BON B


–40 °C 23.1 27.4 31.1 19.9 23.8 27.2 2.9 3.6 3.9 25.6 mT
25 °C 23.1 26.8 30.4 19.9 23.2 26.6 2.8 3.5 3.9 21.5 25 28.5 mT
100 °C 22.2 26.1 29.7 19.1 22.7 25.9 2.7 3.4 3.8 24.4 mT
140 °C 21.7 25.7 29.2 18.6 22.4 25.6 2.6 3.3 3.8 24 mT
170 °C 21.3 25.4 28.9 18.3 22.1 25.3 2.5 3.3 3.8 23.7 mT
28 Micronas
HAL509

35 35
BONmax
BON 30 BON 30
BOFF BON BOFF BOFFmax BONtyp
25 25
BOFFtyp
BOFF BONmin
20 20
BOFFmin
15 15
TA = –40 °C
10 TA = 25 °C 10
TA = 100 °C VDD = 3.8 V
TA = 170 °C VDD = 4.5 V... 24 V
5 5
0 0
0 5 10 15 20 25 30 V –50 0 50 100 150 200 °C
VDD TA, TJ

HAL 509
BON 30
BOFF BON
25
BOFF
20
15
TA = –40 °C
10 TA = 25 °C
TA = 100 °C
TA = 170 °C
5
0
3 3.5 4.0 4.5 5.0 5.5 6.0 V
VDD

Micronas 29
HAL516
The HAL 516 is the most sensitive unipolar switching The HAL 516 is the optimal sensor for all applications
sensor with an inverted output of this family (see with one magnetic polarity and weak magnetic ampli-
Fig. 4–33). tude at the sensor position where an inverted output sig-
nal is required such as:
magnetic field is removed. The sensor does not respond – solid state switches,
– contactless solution to replace micro switches,
For correct functioning in the application, the sensor re- – position and end point detection, and
of the package.
In the HAL 5xx family, the HAL 506 is a sensor with the
same magnetic characteristics but with a normal output Output Voltage
characteristic. VO
Magnetic Features: BHYS
– switching type: unipolar inverted

– high sensitivity VOL
– typical BON: 3.5 mT at room temperature 0 BON BOFF B

– operates with static magnetic fields and dynamic mag- the HAL 516


–40 °C 2.1 3.8 5.4 4.3 5.9 7.7 1.6 2.1 2.8 4.8 mT
25 °C 2 3.5 5 3.8 5.5 7.2 1.5 2 2.7 3.8 4.5 6.2 mT
100 °C 1.9 3.3 4.9 3.6 5.1 7 1.2 1.8 2.6 4.2 mT
140 °C 1.8 3.1 5.1 3.4 4.8 6.9 1 1.7 2.6 4 mT
170 °C 1.7 3 5.2 3.2 4.6 6.8 0.9 1.6 2.6 3.8 mT
The hysteresis is the difference between the switching points BHYS = BOFF – BON
30 Micronas
HAL516

8 8
BOFFmax
BON 7 BON 7
BOFF BOFF
6 6
BOFF
5 5 BOFFtyp
BONmax
4 4 BOFFmin
BON
BONtyp
3 3
TA = –40 °C
TA = 25 °C BONmin
2 2
TA = 100 °C
TA = 170 °C VDD = 3.8 V
1 1
VDD = 4.5 V... 24 V
0 0
0 5 10 15 20 25 30 V –50 0 50 100 150 200 °C
VDD TA, TJ

HAL 516
7
BON
BOFF
BOFF
6
3
BON
TA = –40 °C
2
TA = 25 °C
TA = 100 °C
1
TA = 170 °C
0
3 3.5 4.0 4.5 5.0 5.5 6.0 V
VDD

Micronas 31
HAL517
The HAL 517 is a unipolar switching sensor with inverted The HAL 517 is the optimal sensor for applications with
output (see Fig. 4–37). one magnetic polarity where an inverted output signal is
required such as:
magnetic field is removed. The sensor does not respond – contactless solution to replace micro switches,
of the package.
Output Voltage
– switching type: unipolar inverted
BHYS
– typical on point is 16.2 mT at room temperature
VOL
– typical off point is 18.3 mT at room temperature
– operates with static magnetic fields and dynamic mag- 0 BON BOFF B


–40 °C 14 17.1 21.5 15.5 19.6 22.5 1.6 2.5 3 18.3 mT
25 °C 13.5 16.2 19 15 18.3 20.7 1.5 2.1 2.7 14 17.2 20 mT
100 °C 11 14.3 18.5 12.8 16.1 20.4 1.2 1.8 2.6 15.2 mT
140 °C 10 13.2 18.2 11.5 14.8 20.2 1 1.6 2.6 14 mT
170 °C 9 12.3 18 10.5 13.7 20 0.8 1.4 2.4 13 mT
32 Micronas
HAL517

25 25
BON BON BOFFmax

BOFF 20 BOFF BOFF 20
BONmax
15 15 BOFFtyp
BONtyp
BON
BONmin BOFFmin
10 10
TA = –40 °C
TA = 25 °C
TA = 100 °C VDD = 3.8 V
5 5
TA = 170 °C VDD = 4.5 V... 24 V
0 0
0 5 10 15 20 25 30 V –50 0 50 100 150 200 °C
VDD TA, TJ

HAL 517
BON
BOFF 20 BOFF
15
BON
10
TA = –40 °C
TA = 25 °C
TA = 100 °C
5
TA = 170 °C
0
3 3.5 4.0 4.5 5.0 5.5 6.0 V
VDD

Micronas 33
HAL518
The HAL 518 is a unipolar switching sensor with inverted The HAL 518 is the optimal sensor for applications with
output (see Fig. 4–41). one magnetic polarity where an inverted output signal is
required such as:
magnetic field is removed. The sensor does not respond – contactless solution to replace micro switches,
of the package.
In the HAL 5xx family, the HAL 508 is a sensor with the Output Voltage
same magnetic characteristics but with a normal output VO
characteristic.
BHYS
Magnetic Features:
– switching type: unipolar inverted VOL
– medium sensitivity 0 BON BOFF B

– typical BON: 16 mT at room temperature
– typical BOFF: 18 mT at room temperature the HAL 518


–40 °C 14 16.7 20 15.5 19 22 1.5 2.3 3 17.8 mT
25 °C 13.5 16 19 15 18 20.7 1.4 2 2.8 14 17 20 mT
100 °C 12.5 14.8 18.7 13.9 16.6 20.4 1 1.8 2.7 15.7 mT
140 °C 11.7 14.1 18.5 13 15.8 20.2 0.9 1.7 2.7 15 mT
170 °C 11 13.6 18.3 12.2 15.3 20 0.8 1.7 2.6 14.4 mT
34 Micronas
HAL518

25 25
BON BON BOFFmax

BOFF 20 BOFF BOFF 20
BONmax
BOFFtyp
15 15
BONtyp
BON BOFFmin
BONmin
10 10
TA = –40 °C
TA = 25 °C
TA = 100 °C VDD = 3.8 V
5 5
TA = 170 °C VDD = 4.5 V... 24 V
0 0
0 5 10 15 20 25 30 V –50 0 50 100 150 200 °C
VDD TA, TJ

HAL 518
BON
BOFF 20
BOFF
15
BON
10
TA = –40 °C
TA = 25 °C
TA = 100 °C
5
TA = 170 °C
0
3 3.5 4.0 4.5 5.0 5.5 6.0 V
VDD

Micronas 35
HAL519
The HAL 519 is a very sensitive unipolar switching sen- The HAL 519 is the optimal sensor for all applications
sor with an inverted output sensitive only to the magnetic with the north magnetic polarity and weak magnetic am-
north polarity. (see Fig. 4–45). plitude at the sensor position where an inverted output
signal is required such as:
The output turns high with the magnetic north pole on the
branded side of the package and turns low if the magnet- – solid state switches,
ic field is removed. The sensor does not respond to the – contactless solution to replace micro switches,
magnetic south pole on the branded side, the output re-
mains low. For correct functioning in the application, the – position and end point detection, and
sensor requires only the magnetic north pole on the – rotating speed measurement.
Output Voltage
– switching type: unipolar inverted, north sensitive
BHYS
– high sensitivity
– typical BON: –3.5 mT at room temperature
VOL
– operates with static magnetic fields and dynamic mag- BOFF BON 0 B
the HAL 519


–40 °C –5.4 –3.8 –2.1 –7.7 –5.9 –4.3 1.6 2.1 2.8 –4.8 mT
25 °C –5 –3.6 –2 –7.2 –5.5 –3.8 1.5 1.9 2.7 –6.2 –4.5 –3.8 mT
100 °C –4.9 –3.3 –1.9 –6.7 –5 –3.4 1.2 1.7 2.6 –4.2 mT
140 °C –5.1 –3.1 –1.7 –6.8 –4.8 –3.1 1 1.7 2.6 –4 mT
170 °C –5.2 –3 –1.5 –6.8 –4.6 –2.8 0.9 1.6 2.6 –3.8 mT
36 Micronas
HAL519

0 0
TA = –40 °C VDD = 3.8 V
TA = 25 °C VDD = 4.5 V...24 V
BON –1 BON –1
BOFF TA = 100 °C BOFF
BONmax
–2 TA = 170 °C –2
–3 –3
BON BONtyp
–4 –4 BOFFmax
BONmin
–5 –5
BOFF
–6 –6 BOFFtyp
–7 –7
BOFFmin
–8 –8
0 5 10 15 20 25 30 V –50 0 50 100 150 200 °C
VDD TA, TJ

HAL 519
TA = –40 °C
TA = 25 °C
BON –1
BOFF TA = 100 °C
–2 TA = 170 °C
BON
–3
–4
–5
–6
BOFF
–7
–8
3 3.5 4.0 4.5 5.0 5.5 6.0 V
VDD

Micronas 37
HAL523
The HAL 523 is the least sensitive unipolar switching The HAL 523 is the optimal sensor for applications with
sensor of this family (see Fig. 4–49). one magnetic polarity and strong magnetic fields at the
sensor position such as:
netic field is removed. The sensor does not respond to – contactless solution to replace micro switches,
of the package.
Output Voltage
BHYS
– low sensitivity
VOL
– typical BOFF: 24 mT at room temperature
– operates with static magnetic fields and dynamic mag- 0 BOFF BON B
the HAL 523


–40 °C 28 34.5 42 18 24 30 7 10.5 14 29.3 mT
25 °C 28 34.5 42 18 24 30 7 10.5 14 29.3 mT
100 °C 28 34.5 42 18 24 30 7 10.5 14 29.3 mT
140 °C 28 34.5 42 18 24 30 7 10.5 14 29.3 mT
170 °C 28 34.5 42 18 24 30 7 10.5 14 29.3 mT
38 Micronas
HAL523

45 45
BONmax
40 40
BON BON
BOFF BON BOFF
35 35 BONtyp
BOFFmax
30 30
BOFF BONmin
25 25 BOFFtyp
20 20
TA = –40 °C BOFFmin
15 15
TA = 25 °C
TA = 100 °C VDD = 3.8 V
10 10
TA = 170 °C VDD = 4.5 V...24 V
5 5
0 0
0 5 10 15 20 25 30 V –50 0 50 100 150 200 °C
VDD TA, TJ

HAL 523
40
BON
BOFF BON
35
30
BOFF
25
20
TA = –40 °C
15
TA = 25 °C
TA = 100 °C
10
TA = 170 °C
5
0
3 3.5 4.0 4.5 5.0 5.5 6.0 V
VDD

Micronas 39
HAL5xx
5. Application Notes 5.4. EMC and ESD
5.1. Ambient Temperature For applications with disturbances on the supply line or
radiated disturbances, a series resistor and a capacitor
Due to the internal power dissipation, the temperature are recommended (see figures 5–1). The series resistor
on the silicon chip (junction temperature TJ) is higher and the capacitor should be placed as closely as pos-
than the temperature outside the package (ambient tem- sible to the HAL sensor.
perature TA).
TJ = TA + ∆T Applications with this arrangement passed the EMC
tests according to the product standards DIN 40839.
At static conditions, the following equation is valid:
∆T = IDD * VDD * Rth Note: The international standard ISO 7637 is similar to
the used product standard DIN 40839.
For typical values, use the typical parameters. For worst
case calculation, use the max. parameters for IDD and Please contact Micronas for the detailed investigation
Rth, and the max. value for VDD from the application. reports with the EMC and ESD results.
For all sensors, the junction temperature range TJ is
specified. The maximum ambient temperature TAmax
can be calculated as: RV
TAmax = TJmax – ∆T 220 Ω
RL 1.2 kΩ
1 VDD
5.2. Extended Operating Conditions
VEMC OUT
VP
All sensors fulfill the electrical and magnetic characteris- 3
tics when operated within the Recommended Operating 4.7 nF 20 pF
Conditions (see page 7).
2 GND
Supply Voltage Below 3.8 V
Typically, the sensors operate with supply voltages Fig. 5–1: Test circuit for EMC investigations
above 3 V, however, below 3.8 V some characteristics
may be outside the specification.
Note: The functionality of the sensor below 3.8 V has not

been tested. For special test conditions, please contact
Micronas.
5.3. Start-up Behavior
Due to the active offset compensation, the sensors have

an initialization time (enable time ten(O)) after applying
the supply voltage. The parameter ten(O) is specified in
the Electrical Characteristics (see page 8).
During the initialization time, the output state is not de-

fined and the output can toggle. After ten(O), the output
will be low if the applied magnetic field B is above BON.
The output will be high if B is below BOFF. In case of sen-
sors with an inverted switching behavior (HAL 516 ...
HAL519), the output state will be high if B > BOFF and low
if B < BON.
For magnetic fields between BOFF and BON, the output

state of the HAL sensor after applying VDD will be either
low or high. In order to achieve a well-defined output
state, the applied magnetic field must be above BONmax,
respectively, below BOFFmin.
40 Micronas
HAL5xx
Micronas 41
HAL5xx
42 Micronas
HAL5xx
Micronas 43
HAL5xx
6. Data Sheet History
1. Final data sheet: “HAL 501...506, 508, 509, 516...

518, Hall Effect Sensor Family, Aug. 11, 1999,
6251-485-1DS. First release of the final data sheet.
Major changes to the previous edition “HAL501 ...
HAL506, HAL 508”, Hall Effect Sensor ICs, May 5,
1997, 6251-405-1DS:
– additional types: HAL509, HAL516 ... HAL518
– additional package SOT-89B
– additional temperature range “K”
– outline dimensions for SOT-89A and TO-92UA
changed
– absolute maximum ratings changed
– electrical characteristics changed
– magnetic characteristics for HAL 501, HAL 503,
HAL 506, and HAL 509 changed
2. Final data sheet: “HAL 501...506, 508, 509, 516...

519, 523, Hall Effect Sensor Family”, Feb. 14, 2001,
6251-485-2DS. Second release of the final data
sheet. Major changes:
– additional types: HAL519, HAL523
– phased-out package SOT-89A removed
– temperature range “C” removed
– outline dimensions for SOT-89B: reduced toler-
ances
Micronas GmbH All information and data contained in this data sheet are without any
Hans-Bunte-Strasse 19 commitment, are not to be considered as an offer for conclusion of a
D-79108 Freiburg (Germany) contract, nor shall they be construed as to create any liability. Any new
P.O. Box 840 issue of this data sheet invalidates previous issues. Product availability
and delivery are exclusively subject to our respective order confirma-
D-79008 Freiburg (Germany)
tion form; the same applies to orders based on development samples
Tel. +49-761-517-0 delivered. By this publication, Micronas GmbH does not assume re-
Fax +49-761-517-2174 sponsibility for patent infringements or other rights of third parties
E-mail: docservice@micronas.com which may result from its use.
Internet: www.micronas.com Further, Micronas GmbH reserves the right to revise this publication
and to make changes to its content, at any time, without obligation to
Printed in Germany notify any person or entity of such revisions or changes.
by Systemdruck+Verlags-GmbH, Freiburg (02/01) No part of this publication may be reproduced, photocopied, stored on
Order No. 6251-485-2DS a retrieval system, or transmitted without the express written consent
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MICRONAS HAL501...

506, 508, 509,

Edition Feb. 14, 2001

Page Section Title

44 6. Data Sheet History

Hall Effect Sensor Family 1.2. Family Overview

1.1. Features: 519 unipolar with high 36

All Hall sensors have a marking on the package surface

HAL504 504A 504K 504E 1.6. Solderability

HAL505 505A 505K 505E all packages: according to IEC68-2-58

HAL523 523A 523K 523E

1.3.1. Special Marking of Prototype Parts

2. Functional Description HAL5xx

in the comparator. The temperature-dependent bias

Shunt protection devices clamp voltage peaks at the

Fig. 2–2: Timing diagram

3.1. Outline Dimensions

0.06 ±0.04 branded side

Fig. 3–1: 45° 0.8

y 0.95 mm nominal 1.0 mm nominal

3.4. Absolute Maximum Ratings

Symbol Parameter Pin No. Min. Max. Unit

VDD Supply Voltage 1 –15 281) V

–VP Test Voltage for Supply 1 –242) – V

–IDD Reverse Supply Current 1 – 501) mA

IDDZ Supply Current through 1 –2003) 2003) mA

VO Output Voltage 3 –0.3 281) V

IO Continuous Output On Current 3 – 501) mA

IOmax Peak Output On Current 3 – 2503) mA

IOZ Output Current through 3 –2003) 2003) mA

TS Storage Temperature Range5) –65 150 °C

TJ Junction Temperature Range –40 150 °C

3.5. Recommended Operating Conditions

Symbol Parameter Pin No. Min. Max. Unit

VDD Supply Voltage 1 3.8 24 V

IO Continuous Output On Current 3 0 20 mA

Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions

IDD Supply Current 1 2.3 3 4.2 mA TJ = 25 °C

IDD Supply Current over 1 1.6 3 5.2 mA

VDDZ Overvoltage Protection 1 – 28.5 32 V IDD = 25 mA, TJ = 25 °C,

VOZ Overvoltage Protection at Output 3 – 28 32 V IOH = 25 mA, TJ = 25 °C,

VOL Output Voltage 3 – 130 280 mV IOL = 20 mA, TJ = 25 °C

VOL Output Voltage over 3 – 130 400 mV IOL = 20 mA

IOH Output Leakage Current 3 – 0.06 0.1 µA Output switched off,

IOH Output Leakage Current over 3 – – 10 µA Output switched off,

fosc Internal Oscillator – 49 62 – kHz TJ = 25 °C,

fosc Internal Oscillator Chopper Fre- – 38 62 – kHz

ten(O) Enable Time of Output after 1 – 30 70 µs VDD = 12 V 1)

tr Output Rise Time 3 – 75 400 ns VDD = 12 V, RL = 820 Ohm,

tf Output Fall Time 3 – 50 400 ns VDD = 12 V, RL = 820 Ohm,

RthJSB Thermal Resistance Junction – – 150 200 K/W Fiberglass Substrate

RthJA Thermal Resistance Junction – – 150 200 K/W

Fig. 3–3: Recommended pad size SOT-89B

3.7. Magnetic Characteristics Overview at TJ = –40 °C to +170 °C, VDD = 3.8 V to 24 V,

Magnetic flux density values of switching points.

170 °C –1.5 0.7 3 –2.5 –0.2 2 0.4 0.9 1.8 mT

HAL 502 –40 °C 1 2.8 5 –5 –2.8 –1 4.5 5.6 7.2 mT

latching 25 °C 1 2.6 4.5 –4.5 –2.6 –1 4.5 5.2 7 mT

latching 25 °C 6 8 10 –10 –8 –6 13.6 16 18 mT