Surface Mount NPN Silicon High Frequency Transistor NE688 Series
Surface Mount NPN Silicon High Frequency Transistor NE688 Series
Surface Mount NPN Silicon High Frequency Transistor NE688 Series
DESCRIPTION
b e rs
NEC's NE688 series of NPN epitaxial silicon transistors are
E : u m ot
designed for low cost amplifier and oscillator applications. Low
n
30 (SOT 323 STYLE) 33 (SOT 23 STYLE)
O T r t n
noise figures, high gain and high current capability equate to
N a e .
p r
wide dynamic range and excellent linearity. NE688's low
E a g n
E S
w i ng heet d e si
phase noise distortion and high fT make it an excellent choice
A
for oscillator applications up to 5 GHz. The NE688 series is
PL f o llo a t as n e w
available in six different low cost plastic surface mount pack-
o r
age styles, and in chip form.
e d r f
his ded fo office
T h CHARACTERISTICS
39 (SOT 143 STYLE) 39R (SOT 143R STYLE)
ELECTRICAL t
fro m mmen sales
(TA = 25°C)
o l
rec se cal
PART NUMBER1 NE68818 NE68819 NE68830 NE68833 NE68839/39R
EIAJ2 REGISTERED NUMBER 2SC5194 2SC5195 2SC5193 2SC5191 2SC5192/92R
PACKAGE OUTLINE 18 19 30 33 39
a
Ple ils:
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
fT Gain Bandwidth Product at
a
det 8818
VCE = 1V, IC = 3 mA, f = 2.0 GHz GHz 4 5 4.5 5 4 4.5 4 4.5 4 4.5
fT Gain Bandwidth Product at
VCE = 3V, IC = 20 mA, f = 2.0 GHz GHz 10 9.5 9 8.5 9
N E 6 8 8 39
NFMIN Minimum Noise Figure at
VCE = 1 V, I C = 3 mA, f = 2.0 GHz dB 1.7 2.5 1.7 2.5 1.7 2.5 1.7 2.5 1.7 2.5
NFMIN Minimum Noise Figure at
NE6 8839R
VCE = 3 V, I C = 7 mA, f = 2.0 GHz dB 1.5 1.5 1.5 1.5 1.5
|S21E|2 Insertion Power Gain at
VCE = 1V, IC = 3 mA, f = 2.0 GHz dB 3.0 4.0 3.0 4.0 2.5 3.5 2.5 3.5 4.0 4.5
NE6
|S21E|2 Insertion Power Gain at
VCE = 3V, IC = 20 mA, f = 2.0 GHz dB 8.5 8 6.5 6.5 9
hFE Forward Current Gain3 at
VCE = 1 V, I C = 3 mA 80 160 80 160 80 160 80 160 80 160
ICBO Collector Cutoff Current
at VCB = 5 V, IE = 0 mA nA 100 100 100 100 100
IEBO Emitter Cutoff Current
at VEB = 1 V, IC = 0 mA nA 100 100 100 100 100
CRE4 Feedback Capacitance at
VCB = 1 V, I E = 0 mA, f = 1 MHz pF 0.65 0.8 0.7 0.8 0.75 0.85 0.75 0.85 0.65 0.8
PT Total Power Dissipation mW 150 125 150 200 200
RTH(J-A) Thermal Resistance
(Junction to Ambient) °C/W 833 1000 833 625 625
RTH(J-C) Thermal Resistance(Junction to Case) °C/W
Notes: 3. Pulsed measurement, PW ≤ 350 µs, duty cycle ≤ 2%.
1. Precaution: Devices are ESD sensitive. Use proper handling procedures. 4. The emitter terminal should be connected to the ground terminal of
2. Electronic Industrial Association of Japan. the 3 terminal capacitance bridge.
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
100
100
50
0 0
0 50 100 150 0 50 100 150
25 180 µA
Collector Current, IC (mA)
200
160 µA
20
140 µA
120 µA
15
100 µA
100
80 µA
10
60 µA
40 µA
5
IB = 20 µA
0 0
0 50 100 150 0 2.5 5 7
VCE = 3 V
4
VCE = 1 V
3
4
VCE = 3 V
2
2 VCE = 1 V
1
0 0
1 2 5 10 20 50 100 1 2 5 10 20 50 100
NE68839
D.C. CURRENT GAIN vs. GAIN BANDWIDTH PRODUCT
COLLECTOR CURRENT vs. COLLECTOR CURRENT
200 10
VCE = 1 V f = 2 GHz
Gain Bandwidth Product, fT (GHz) VCE = 3 V
8
DC Current Gain, hFE
VCE = 1 V
6
100
0 0
0.1 0.2 0.5 1 2 5 10 20 50 100 1 2 5 10 20 50 100
NE68830
COLLECTOR CURRENT vs. FEED-BACK CAPACITANCE vs.
BASE TO EMITTER VOLTAGE COLLECTOR TO BASE VOLTAGE
100
VCE = 1 V
50 f = 1 MHz
Feed-back Capacitance, CRE (pF)
20
Collector Current, IC (mA)
10
5 1.0
2
1 0.5
0.5
0.2
0.1
0.05
0.02
0.01 0.1
0 0.5 1 1 5 10 20
Base to Emitter Voltage, VBE (V) Collector to Base Voltage, VCB (V)
NE688 SERIES
VCE = 5.0 V, IC = 10 mA
0.1 0.717 -44.700 22.801 147.800 0.029 68.600 0.867 -28.800 0.210 28.956
0.4 0.466 -119.600 10.924 103.000 0.063 49.200 0.442 -67.400 0.609 22.390
0.8 0.383 -161.000 5.912 80.300 0.093 48.100 0.279 -81.500 0.886 18.033
1.0 0.371 -173.600 4.804 72.300 0.108 47.600 0.246 -84.900 0.954 16.482
1.5 0.356 163.800 3.304 55.300 0.149 43.800 0.206 -89.800 1.029 12.415
2.0 0.349 146.600 2.545 40.600 0.192 37.800 0.183 -94.100 1.055 9.785
2.5 0.346 131.700 2.110 26.300 0.237 30.200 0.163 -99.400 1.055 8.057
3.0 0.349 118.200 1.842 12.700 0.282 21.500 0.140 -111.400 1.045 6.851
4.0 0.403 87.800 1.503 -13.400 0.369 1.900 0.113 -179.400 1.015 5.349
5.0 0.485 53.100 1.262 -38.900 0.437 -18.800 0.229 127.200 0.992 4.606
Note:
1.Gain Calculations:
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S21| |S21| 2 2 2
MAG = (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
|S12| |S12| 2 |S12 S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
NE688 SERIES
VCE = 5.0 V, IC = 10 mA
0.1 0.656 -44.300 22.050 146.100 0.029 70.900 0.835 -29.100 0.264 28.810
0.4 0.380 -119.100 9.847 104.200 0.067 59.500 0.400 -57.400 0.732 21.672
0.8 0.311 -155.500 5.283 86.600 0.107 64.100 0.258 -62.400 0.949 16.935
1.0 0.299 -166.800 4.287 81.100 0.129 65.200 0.232 -63.600 0.989 15.216
1.5 0.291 173.200 2.964 69.500 0.183 65.300 0.204 -67.100 1.028 11.073
2.0 0.289 157.500 2.315 60.200 0.239 63.500 0.197 -71.700 1.028 8.840
2.5 0.289 145.100 1.932 51.600 0.294 60.600 0.201 -76.800 1.016 7.393
3.0 0.285 131.600 1.686 43.900 0.349 57.000 0.207 -83.200 1.006 6.382
4.0 0.307 110.900 1.388 30.500 0.453 48.400 0.205 -100.900 0.982 4.863
5.0 0.385 98.500 1.225 17.800 0.543 38.300 0.173 -142.100 0.965 3.533
Note:
1.Gain Calculations:
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S21| |S21| 2 2 2
MAG = (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
|S12| |S12| 2 |S12 S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
NE688 SERIES
1 90˚
.8
1.5
.6
2
.4 135˚ 45˚
S22 3
5 GHz
4
.2 5
S11
10
S12
5 GHz 5 GHz
20 S21 S12
0 .2 .4 .6 .8 1 1.5 2 3 4 5 10 20 180˚ 5 GHz .25 .50 0˚
S22 -20
0.1 GHz S21
0.1 GHz -10 0.1 GHz
S11
-.2 -5 0.1 GHz
-4 1
-3 Coordinates in Ohms
-.4 Frequency in GHz 225˚ 315˚
-2
-.6 (VCE = 0.5 V, IC = 0.5 mA)
-1.5
-.8 -1 270˚
NE68833
VCE = 0.5 V, IC = 0.5 mA
FREQUENCY S11 S21 S12 S22 K MAG1
GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB)
0.1 0.971 -15.100 1.775 164.000 0.065 79.000 0.989 -8.700 0.117 14.363
0.4 0.877 -59.900 1.588 127.800 0.215 50.900 0.883 -30.200 0.261 8.684
0.8 0.723 -105.400 1.237 90.500 0.295 25.300 0.729 -48.600 0.491 6.225
1.0 0.683 -122.900 1.101 76.900 0.303 16.500 0.682 -55.300 0.581 5.603
1.5 0.640 -158.100 0.871 51.800 0.265 2.900 0.609 -71.400 0.824 5.168
2.0 0.644 174.400 0.717 35.000 0.199 3.900 0.584 -88.400 1.167 3.092
2.5 0.669 151.300 0.612 25.500 0.171 27.800 0.578 -107.300 1.428 1.649
3.0 0.682 131.300 0.544 22.100 0.243 47.700 0.580 -126.900 1.244 0.525
VCE = 3.0 V, IC = 20 mA
0.1 0.479 -65.600 29.593 133.500 0.026 65.900 0.692 -41.600 0.448 30.562
0.4 0.276 -141.300 10.351 95.700 0.066 67.400 0.266 -67.200 0.898 21.954
0.8 0.252 -176.800 5.382 80.200 0.119 68.300 0.165 -73.600 0.999 16.554
1.0 0.251 171.500 4.352 74.600 0.146 67.100 0.146 -77.100 1.014 14.006
1.5 0.265 151.700 2.993 62.700 0.212 62.500 0.121 -88.700 1.024 10.543
2.0 0.289 136.500 2.324 52.200 0.275 56.900 0.110 -104.300 1.021 8.387
2.5 0.313 124.100 1.932 42.400 0.335 50.800 0.114 -122.300 1.012 6.930
3.0 0.332 113.100 1.678 33.800 0.390 44.500 0.130 -139.600 1.007 5.840
4.0 0.378 96.000 1.384 17.900 0.486 32.000 0.175 -170.800 0.992 4.545
5.0 0.445 80.700 1.201 3.100 0.556 19.400 0.231 160.200 0.983 3.345
VCE = 5.0 V, IC = 10 mA
0.1 0.686 -44.200 22.023 145.500 0.030 67.500 0.828 -29.500 0.293 28.658
0.4 0.356 -115.200 9.698 102.500 0.071 59.600 0.390 -57.900 0.756 21.354
0.8 0.271 -158.000 5.191 83.500 0.116 62.500 0.246 -64.000 0.958 16.508
1.0 0.262 -172.200 4.212 77.100 0.139 62.400 0.217 -66.100 0.997 14.815
1.5 0.266 161.900 2.912 64.000 0.199 60.200 0.178 -73.800 1.028 10.631
2.0 0.285 143.600 2.269 52.800 0.258 56.100 0.158 -84.900 1.029 8.398
2.5 0.312 129.300 1.886 42.600 0.316 51.300 0.153 -99.700 1.017 6.962
3.0 0.332 117.100 1.639 33.700 0.370 45.800 0.158 -116.500 1.008 5.901
4.0 0.381 97.900 1.351 17.500 0.469 34.200 0.187 -150.600 0.986 4.595
5.0 0.449 81.900 1.175 2.500 0.548 22.000 0.230 176.200 0.970 3.313
Note:
1.Gain Calculations:
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S21| |S21| 2 2 2
MAG = (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
|S12| |S12| 2 |S12 S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
NE688 SERIES
VCE = 5.0 V, IC = 10 mA
0.1 0.703 -41.700 22.638 149.200 0.027 69.700 0.865 -26.400 0.232 29.235
0.4 0.441 -117.800 11.095 106.400 0.064 54.500 0.432 -59.100 0.640 22.389
0.8 0.378 -163.300 6.015 85.900 0.095 55.900 0.246 -71.500 0.901 18.015
1.0 0.383 -177.500 4.863 79.200 0.112 56.300 0.203 -77.000 0.956 16.377
1.5 0.418 158.400 3.313 65.600 0.153 55.200 0.145 -97.200 1.020 12.494
2.0 0.468 142.100 2.505 53.900 0.193 52.200 0.133 -126.000 1.035 9.985
2.5 0.512 130.300 2.034 43.700 0.231 48.300 0.153 -152.300 1.034 8.325
3.0 0.559 120.900 1.708 34.800 0.265 44.100 0.191 -170.400 1.024 7.135
4.0 0.638 105.400 1.312 19.300 0.325 35.200 0.282 168.100 0.993 6.061
5.0 0.712 92.600 1.066 5.700 0.370 26.100 0.377 154.100 0.954 4.596
Note:
1.Gain Calculations:
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S21| |S21| 2 2 2
MAG = (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
|S12| |S12| 2 |S12 S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
NE688 SERIES
SCHEMATIC
Q1
CCB
LB LC
CCE
LE
SCHEMATIC CCBPKG
CCB
LCX
LBX LB LC Collector
Base CCE
CCEPKG
CBEPKG LE
LEX
Emitter
SCHEMATIC CCBPKG
Q1
0.08 pF
CCB
LCX
0.24 pF
LBX LB Collector
CCE 0.5 nH
Base
0.19 nH 1.12 nH 0.27 pF
CBEPKG LE CCEPKG
0.3 pF 0.6 nH 0.3 pF
LEX
0.19 nH
Emitter
SCHEMATIC Q1
CCBPKG
CCB
LC LCX
LBX LB Collector
Base CCE
CCEPKG
CBEPKG LE
LEX
Emitter
CCBPKG Q1
SCHEMATIC
CCB
LCX
LBX LB Collector
Base CCE
CBEPKG CCEPKG
LE
LEX
Emitter
SCHEMATIC Q1
CCBPKG
CCB
LC LCX
LBX LB Collector
Base CCE
CCEPKG
CBEPKG LE
LEX
Emitter
1 4
1.25
+0.10 LEAD CONNECTIONS
0.4 -0.05
1. Collector
0.3 2. Emitter
3. Base
0.9 ± 0.1 4. Emitter
1 4
1.7
+0.10
0 to 0.1 0.15 -0.05
2.1 ± 0.2
1.25 ± 0.1
1.7
2.0 ± 0.2 0.65 2 2
+0.1
1.3 0.3 -0.05
3 (ALL LEADS)
3
1 MARKING
1.3
LEAD CONNECTIONS 0.65
0.15 1. Emitter
0.6
2. Base
0.9 ± 0.1 3. Collector 1
0.8
+0.10
0 to 0.1 0.15 -0.05
2.4
2 2
2.9 ± 0.2 0.95
+0.10
0.4 -0.05
1.9 3 (ALL LEADS)
3
1 1.9
+0.2 +0.10
1.5 -0.1 0.65 -0.15 0.95
LEAD 0.8
CONNECTIONS
1.1 to 1.4
1. Emitter 1
0.8 2. Base 1.0
3. Collector
0 to 0.1 +0.10
0.16 -0.06
NE688 SERIES
2 3
2 3
2.9 ± 0.2 0.95
1.9
0.85
LEAD
1 4 CONNECTIONS
1. Collector 1.9
+0.10
0.6 -0.05
2. Emitter
3. Base
4. Emitter
+0.2
1.1 -0.1 1.0
0.8
0.16 +0.10
-0.06
1 4
5˚ 1.0
5˚
0 to 0.1
1 4 +0.10
0.4 -0.05 1.9
(LEADS 1, 3, 4)
1.0
1.1+0.2
-0.1 0.8 0.16 +0.10
-0.06
1 4
1.0
5˚ 5˚
0 to 0.1
ORDERING INFORMATION
PART NUMBER QUANTITY PACKAGING
NE68800 100 Waffle Pack
NE68818-T1-A 3000 Tape & Reel
NE68819-T1-A 3000 Tape & Reel
NE68830-T1-A 3000 Tape & Reel
NE68833-T1-A 3000 Tape & Reel
NE68839-T1-A 3000 Tape & Reel
NE68839R-T1 3000 Tape & Reel
Note:
1. Lead material: Cu
Lead plating: PbSn
05/18/2005
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.
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