EE1110 - High Voltage Engineering Unit-4
EE1110 - High Voltage Engineering Unit-4
EE1110 - High Voltage Engineering Unit-4
By
G.SANTHOSHKUMAR, M.E., (Ph.D)
Assistant Professor (O.G),
Department of EEE, SRM University.
Measurement of High Voltages and Currents
In industrial testing and research laboratories, it is essential to measure
the voltages and currents accurately, ensuring perfect safety to the
personnel and equipment.
Secondly, linear extrapolation of the devices beyond their ranges are not
valid for high voltage meters and measuring instruments, and they have to
be calibrated for the full range.
Electromagnetic interference is a serious problem in impulse voltage and
current measurements, and it has to be avoided or minimized.
Therefore, even though the principles of measurements may be same, the
devices and instruments for measurement of high voltages and currents
differ vastly from the low voltage and low current devices.
(a) Extended series resistance with inductance neglected (b) Series resistance with guard and tuning resistances
To avoid the
drawbacks pointed
out earlier, a series
capacitor is used
instead of a resistor
for a.c. high voltage
measurements. The
current IC through
the meter is: IC=jCV
It is clear from the phasor diagram that V1. (input voltage) = (VC1 + VC2) and is in phase
with V2, the voltage across the meter.
Re and Xe include the potential transformer resistance and leakage reactance. Under
this condition, the voltage ratio becomes a= (V1 /V2)(Vc1 + VRi + V2)/ V2.
(neglecting the voltage drop Im Xe, which is very small compared to the voltage Vc1)
where VRi is the voltage drop in the transformer and choke windings.
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The advantages of a CVT are:
(i) simple design and easy installation,
(ii) can be used both as a voltage measuring device for meter and relaying purposes and
also as a coupling condenser for power line carrier communication and relaying.
(iii) frequency independent voltage distribution along elements as against conventional
magnetic potential transformers which require additional insulation design against surges,
and
(iv) provides isolation between the high voltage terminal and low voltage metering.
The disadvantages of a CVT are:
(i) the voltage ratio is susceptible to temperature variations, and
(ii) the problem of inducing ferro-resonance in power systems.
Resistance Potential Dividers
Resistance potential dividers suffer from the same disadvantages as series resistance
voltmeters for a.c. applications.
Moreover, stray capacitances and inductances associated with the resistances make them
inaccurate, and compensation has to be provided. Hence, they are not generally used.
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V20 = open circuit voltage of the PT winding; VX =% reactance drop in the transformer.
CN as load capacitance used for testing; C = test object capacitance (C CN) and
Rd Damping resistor
L Lead inductance
Cp Capacitance of the shield to ground
S Shield
where s is the complex frequency or Laplace transform operator and V(s) and I(s)
are the transformed quantities of the signals v(t) and i(t). With the value of
C neglected it may be approximated as: V(s)= (R+ Ls)I(S).
It may be noted here that the stray inductance and capacitance should be made as
small as possible for better frequency response of the shunt. The resistance shunt
is usually designed in the following manner to reduce the stray effects.
(a) Bifilar flat strip design,
(b) coaxial tube or Park's shunt design, and
(c) coaxial squirrel cage design
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Bifilar Strip Shunt
The bifilar design (Fig. 7.46) consists of resistor elements wound in opposite directions
and folded back, with both ends insulated by a teflon or other high quality insulation.
The voltage signal is picked up through a ultra high frequency (UHF) coaxial connector.
The shunt suffers from stray inductance associated with the resistance element, and its
potential leads are linked to a small pan of the magnetic flux generated by the current
that is measured. To overcome these problems, coaxial shunts are chosen.
1. Metal base
2. Current terminals (C1 and C2)
3. Bifilar resistance strip
4. Insulating spacer (teflon or bakelite)
5. Coaxial UHF connector P1, P2 Potential terminals
The coaxial tubular shunts were constructed for current peaks up to 500 kA; shunts constructed
for current peaks as high as 200 kA with di/dt of about 5x1010 A/s have induced voltages less
than 50Vand the voltage drop across the shunt was about 100 V.
Skin depth, d, is defined as the distance or depth from the surface at which
the magnetic field intensity is reduced to 1/e (e = 2.718 ...) of the surface
value for a given frequency f.
Materials of low conductivity (high resistivity materials) have large skin
depth and hence exhibit less skin effect It may be stated that low ohmic
shunts of coaxial type or squirrel cage type construction permit
measurements of high currents with response times less than 10 ns.