Lec6w Processintegration Ee143 CTN
Lec6w Processintegration Ee143 CTN
Lec6w Processintegration Ee143 CTN
CTN 9/16/14
CTN 9/16/14
CTN 9/16/14
CTN 9/16/14
CTN 9/16/14
CTN 9/16/14
CTN 9/16/14
CTN 9/16/14
CTN 9/16/14
Process Flow:
1. Silicon oxidation: target = 100nm
2. LPCVD Si3N4: target = 100nm
3. Lithography: Mask I (active area)
4. Etch Si3N4 to clear it in field areas
5. Field isolation implant: B+ (p-type)
6. Remove PR
7. Grow 1mm of SiO2 by thermal oxidation
(LOCOS oxidation)
8. Blanket etch all Si3N4 in hot phosphoric acid
wet etchant
9. Threshold voltage implant: B+ (no mask)
CTN 9/16/14
CTN 9/16/14
Through step 5:
CTN 9/16/14
CTN 9/16/14
CTN 9/16/14
CTN 9/16/14