2 SB 955
2 SB 955
2 SB 955
Application
Power switching complementary pair with 2SD1126(K)
Outline
TO-220AB
2 3
1. Base
2. Collector
(Flange)
3. Emitter
ID
1.0 k
(Typ)
200
(Typ)
3
2SB955(K)
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Rating
Unit
VCBO
120
VCEO
120
VEBO
Collector current
IC
10
I C(peak)
15
10
50
ID*
1
2
PC *
Junction temperature
Tj
150
Storage temperature
Tstg
55 to +150
Min
Typ
Max
Unit
Test conditions
120
I C = 25 mA, RBE =
V(BR)EBO
I E = 200 mA, IC = 0
I CBO
100
VCB = 120 V, IE = 0
I CEO
10
hFE
1000
20000
VCE(sat)1
1.5
I C = 5 A, IB = 10 mA*1
voltage
VCE(sat)2
3.0
I C = 10 A, IB = 0.1 A*1
VBE(sat)1
2.0
I C = 5 A, IB = 10 mA*1
voltage
VBE(sat)2
3.5
I C = 10 A, IB = 0.1 A*1
VD
3.0
I D = 10 A*1
Turn on time
t on
0.8
VCC = 30 V
t off
4.0
I C = 5 A, IB1 = IB2 = 10 mA
Note:
Symbol
1. Pulse test
VCE = 3 V, IC = 5 A*1
2SB955(K)
Maximum Collector Dissipation
Curve
Area of Safe Operation
30
0.3
Ta = 25C
0.1
50
100
Case temperature TC (C)
0.03
3
150
2.0
30000
5
1.
1.0
0.9
0.8
0.7
50
0.6
0.5
4
0.4 mA
2
IB = 0
0
6
8
10
2
4
Collector to emitter voltage VCE (V)
TC = 25C
10
30
100
300
Collector to emitter voltage VCE (V)
ot
)
sh
C
ot
25
s1
=
sh
m
1
1
s
=
(T C
m
ion
at
er
Op
1.0
10
10
20
IC(max)
DC
30
PW
40
iC(peak)
10
PW
50
VCE = 3 V
Pulse
10000
=
Ta
3000
C
75
25
5
2
1000
300
100
30
0.3
1.0
3
10
Collector current IC (A)
30
10
3
10
3
VBE(sat)
1.0
500
VCE(sat)
0.3
2SB955(K)
200
IC/IB = 100
0.1
Ta = 25C
Pulse
0.03
0.01
0.3
1.0
3
10
Collector current IC (A)
tstg
ton
1.0
tf
0.3
0.1
VCC = 30 V
IC = 500 IB1 = 500 IB2
Ta = 25C
0.03
30
0.01
0.3
1.0
3
10
Collector current IC (A)
TC = 25C
1
2
3
4
Diode forward voltage VF (V)
30
Unit: mm
11.5 MAX
2.79 0.2
10.16 0.2
9.5
3.6 -0.08
+0.1
1.26 0.15
15.0 0.3
6.4
18.5 0.5
1.27
+0.2
0.1
8.0
4.44 0.2
7.8 0.5
1.5 MAX
0.76 0.1
2.54 0.5
2.54 0.5
14.0 0.5
2.7 MAX
0.5 0.1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-220AB
Conforms
Conforms
1.8 g
Cautions
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