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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
 FDS6682
February 2004

FDS6682
30V N-Channel PowerTrench MOSFET

General Description Features

This N-Channel MOSFET has been designed • 14 A, 30 V. RDS(ON) = 7.5 mΩ @ VGS = 10 V
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional RDS(ON) = 9.0 mΩ @ VGS = 4.5 V
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an • Low gate charge (22 nC typical)
extremely low RDS(ON) in a small package.
• High performance trench technology for extremely
low RDS(ON)
Applications • High power and current handling capability
• DC/DC converter

D
D 5 4
D
D 6 3

7 2
G
S 8 1
S
SO-8 S

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol Parameter Ratings Units

VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current – Continuous (Note 1a) 14 A
– Pulsed 50
PD Power Dissipation for Single Operation (Note 1a) 2.5 W
(Note 1b) 1.2
(Note 1c) 1.0
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity
FDS6682 FDS6682 13’’ 12mm 2500 units

2004 Fairchild Semiconductor Corporation FDS6682 Rev D(W)

 FDS6682
Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V
∆BVDSS Breakdown Voltage Temperature
ID = 250 µA, Referenced to 25°C 23 mV/°C
∆TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 10 µA
IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA

On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.7 3 V
∆VGS(th) Gate Threshold Voltage ID = 250 µA, Referenced to 25°C
–5.6 mV/°C
∆TJ Temperature Coefficient
RDS(on) Static Drain–Source VGS = 10 V, ID = 14 A 5.7 7.5 mΩ
On–Resistance VGS = 4.5 V, ID = 12.5 A 6.6 9
VGS = 4.5 V, ID = 12.5 A, TJ=125°C 8 11.5
ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
gFS Forward Transconductance VDS = 10 V, ID = 14 A 70 S

Dynamic Characteristics
Ciss Input Capacitance VDS = 15 V, V GS = 0 V, 2310 pF
Coss Output Capacitance f = 1.0 MHz 582 pF
Crss Reverse Transfer Capacitance 237 pF

Switching Characteristics (Note 2)

td(on) Turn–On Delay Time VDD = 15 V, ID = 1 A, 10 20 ns
VGS = 10 V, RGEN = 6 Ω
tr Turn–On Rise Time 7 14 ns
td(off) Turn–Off Delay Time 44 70 ns
tf Turn–Off Fall Time 16 29 ns
Qg Total Gate Charge VDS = 15 V, ID = 14 A, 22 31 nC
VGS = 5 V
Qgs Gate–Source Charge 6.4 nC
Qgd Gate–Drain Charge 8 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current 2.1 A
Drain–Source Diode Forward
VSD VGS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 V
Voltage
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 50°C/W when b) 105°C/W when c) 125°C/W when mounted on a

mounted on a 1in2 mounted on a .04 in2 minimum pad.
pad of 2 oz copper pad of 2 oz copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDS6682 Rev D(W)

 FDS6682
Typical Characteristics

80 2.2
VGS = 10V 4.5V

DRAIN-SOURCE ON-RESISTANCE
3.5V
2
VGS = 3.0V
ID, DRAIN CURRENT (A)

60

RDS(ON), NORMALIZED
1.8

3.0V 1.6
40
1.4 3.5V

4.0V
1.2 4.5V
20
6.0V
1 10V

0 0.8
0 0.5 1 1.5 2 2.5 0 20 40 60 80
VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.8 0.016
ID = 7.0A
DRAIN-SOURCE ON-RESISTANCE

ID = 14A
RDS(ON), ON-RESISTANCE (OHM)

1.6 0.014
VGS = 10V
RDS(ON), NORMALIZED

1.4 0.012
TA = 125oC
1.2 0.01

1 0.008
TA = 25oC
0.8 0.006

0.6 0.004
-50 -25 0 25 50 75 100 125 150 175 2 4 6 8 10
o
TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with

Temperature. Gate-to-Source Voltage.

100 100
VDS = 5V TA = -55oC 25oC VGS = 0V
IS, REVERSE DRAIN CURRENT (A)

80 125oC 10
ID, DRAIN CURRENT (A)

TA = 125oC
1
60
25oC
0.1
40 -55oC
0.01

20
0.001

0 0.0001
1.5 2 2.5 3 3.5 4 0 0.2 0.4 0.6 0.8 1 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS6682 Rev D(W)

 FDS6682
Typical Characteristics

10 4000
ID = 14A VDS = 5V f = 1 MHz
VGS, GATE-SOURCE VOLTAGE (V)

10V VGS = 0 V
8
15V 3000

CAPACITANCE (pF)
CISS
6

2000

4
COSS
1000
2

CRSS
0 0
0 10 20 30 40 50 0 5 10 15 20 25 30
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100 50
P(pk), PEAK TRANSIENT POWER (W) SINGLE PULSE
100µs
RθJA = 125°C/W
RDS(ON) LIMIT 1ms 40 TA = 25°C
ID, DRAIN CURRENT (A)

10 10ms
100ms
1s 30
10s
1
DC
20
VGS = 10V
SINGLE PULSE
0.1
RθJA = 125oC/W 10
TA = 25oC

0.01 0
0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
TRANSIENT THERMAL RESISTANCE

1
r(t), NORMALIZED EFFECTIVE

D = 0.5

RθJA(t) = r(t) + RθJA

0.2
o
0.1 RθJA = 125 C/W
0.1
0.05
P(pk)
0.02
0.01 t1
0.01 t2
TJ - TA = P * RθJA(t)
SINGLE PULSE Duty Cycle, D = t1 / t2

0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

FDS6682 Rev D(W)

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™ FACT Quiet Series™ ImpliedDisconnect™ PACMAN™ SPM™
ActiveArray™ FAST ISOPLANAR™ POP™ Stealth™
Bottomless™ FASTr™ LittleFET™ Power247™ SuperFET™
CoolFET™ FPS™ MICROCOUPLER™ PowerSaver™ SuperSOT™-3
CROSSVOLT™ FRFET™ MicroFET™ PowerTrench SuperSOT™-6
DOME™ GlobalOptoisolator™ MicroPak™ QFET SuperSOT™-8
EcoSPARK™ GTO™ MICROWIRE™ QS™ SyncFET™
E2CMOS™ HiSeC™ MSX™ QT Optoelectronics™ TinyLogic
EnSigna™ I2C™ MSXPro™ Quiet Series™ TINYOPTO™
FACT™ i-Lo™ OCX™ RapidConfigure™ TruTranslation™
Across the board. Around the world.™ OCXPro™ RapidConnect™ UHC™
The Power Franchise OPTOLOGIC SILENT SWITCHER UltraFET
Programmable Active Droop™ OPTOPLANAR™ SMART START™ VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I10
 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

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