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    Basic Electronics Engineering 4

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    Basic Electronics Engineering 4

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    shivamvyasq
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    3 views3 pages

    Basic Electronics Engineering 4

    Uploaded by

    shivamvyasq

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    Total No. of Questions: 6 Total No.

    of Printed Pages:3

    Enrollment No......................................

    Faculty of Engineering / Science


    End Sem Examination Dec-2023
    EN3ES16 / BC3ES08 Basic Electronics Engineering
    Programme: B.Tech./ Branch/Specialisation: All
    B.Sc.
    Duration: 3 Hrs. Maximum Marks: 60
    Note: All questions are compulsory. Internal choices, if any, are indicated. Answers of
    Q.1 (MCQs) should be written in full instead of only a, b, c or d. Assume suitable data if
    necessary. Notations and symbols have their usual meaning.
    Q.1 i. At room temperature, the energy gap (EG) between conduction and 1
    valence bands of semiconductor is approximately equal to-
    (a) 0 ev (b) 0.5 ev (c) 1 ev (d) 1.5 ev
    ii. Reverse saturation current IO is of the order of (for Silicon and 1
    Germanium respectively)-
    (a) nA, nA (b) nA, µA (c) µA, µA (d) µA, nA
    iii. For amplification purpose, a transistor is used in- 1
    (a) Forward active mode (b) Saturation mode
    (c) Cut-off mode (d) All of these
    iv. Which type of transistor is known as NORMALLY-OFF transistor? 1
    (a) Depletion-Type MOSFET in depletion mode
    (b) Depletion-Type MOSFET in enhancement mode
    (c) Enhancement-Type MOSFET
    (d) None of these
    v. Sampling theorem states- 1
    (a) fs ≥ 2fm (b) fs ≤ 2fm (c) fs < 2fm (d) fs > 2fm
    vi. Condition for modulation (fc=Carrier signal frequency, fm=Message 1
    signal frequency)-
    (a) No any condition (b) fc ≤ fm
    (c) fc > fm (d) fc = fm
    vii. 1’s complement can be easily obtained by using- 1
    (a) Multiplexer (b) Subtractor
    (c) Comparator (d) Adder
    viii. The decimal number 10 is represented in its BCD form as- 1
    (a) 10100000 (b) 01010111 (c) 00010000 (d) 00101011

    P.T.O.
    [2] [3]
    ix. Which of the following device is used to measure power in A.C. 1 OR iii. Explain ‘Need for Modulation’ and give advantages of modulation. 7
    circuits?
    (a) Wattmeter (b) Voltmeter (c) Ohmmeter (d) Ammeter Q.5 i. Define minterms and maxterms with example. 4
    x. Which of the following determines light intensity in a CRT? 1 ii. Explain half adder and full adder in detail. 6
    (a) Fluorecent screen (b) Current OR iii. Simplify the expression Y = ∑m (3,4,5,7,9,13,14,15) using the K-map 6
    (c) Momentum of electrons (d) Voltage method.

    Q.2 i. Define barrier potential. 2 Q.6 i. Give difference between accuracy and precision. 2
    ii. What is effect of temperature on conductivity of intrinsic and extrinsic 3 ii. Explain types of multimeter. 3
    semiconductor? Explain. iii. Draw block diagram of CRO and explain the functioning of each 5
    iii. Draw and explain the circuit required to produce the output given in 5 block.
    Fig. (b) When input is waveform given in Fig. (a). OR iv. Explain measurement of voltage, frequency and phase angle using 5
    CRO with the help of diagram.

    ******

    Input Waveform Output Waveform


    Fig. (a) Fig. (b)
    OR iv. Draw and explain the circuit required to produce the output given in 5
    Fig. (b) When input is waveform given in Fig. (a).

    Input Waveform Output Waveform


    Fig. (a) Fig. (b)

    Q.3 i. What is Early-Effect? 2


    ii. Explain transistor biasing modes with circuit diagram for NPN 3
    transistor.
    iii. Explain input and output characteristics of common base transistor. 5
    OR iv. Explain construction and working of Enhancement-Type MOSFET 5
    (N-Channel).

    Q.4 i. Explain amplitude modulation with the help of diagram. 3


    ii. Draw block diagram of communication system and explain the 7
    functioning of each block.
    [4]
    Q.5 i. Minterms- 2 Marks, 4
    Scheme of Marking Maxterms- 2 Marks
    EN3ES16 Basic Electronics Engineering ii. Half adder- 3 Marks 6
    Full adder- 3 Marks
    Q.1 i) c) 1 ev 1 OR iii. Y = A’CD+ABC+AC’D+A’BC’- 6 Marks 6
    ii) b) nA, µA 1
    iii) a) Forward active mode 1 Q.6 i. Difference between Accuracy and Precision-2 Marks 2
    iv) c) Enhancement-Type MOSFET 1 ii. Analog- 1.5 Marks, 3
    v) 1 Digital- 1.5 Marks
    a) fs≥2fm
    vi) 1 iii. Block diagram of CRO- 2 Marks, 5
    c) fc>fm
    explanation of the functioning of each block-3 Marks
    vii) b) Subtractor 1 OR iv. measurement of voltage- 2 Marks, 5
    viii) c) 00010000 1 frequency- 1.5 Marks,
    ix) a) Wattmeter 1 phase angle- 1.5 Marks
    x) c) Momentum of electrons 1
    ******
    Q.2 i. Definition 2
    ii. Intrinsic Semicondutor- 1.5 Marks, 3
    Extrinsic Semicondutor- 1.5 Marks
    iii. Circuit Diagram- 2 Marks, 5
    Explanation- 3 Marks
    OR iv. Circuit Diagram- 2 Marks, 5
    Explanation- 3 Marks

    Q.3 i. Early-Effect-2 Marks 2


    ii. 1 Mark for each mode 3
    iii. Input Characteristics- 2.5 Marks, 5
    Output Characteristics- 2.5 Marks
    OR iv. Construction- 2 Marks, 5
    working of Enhancement-Type MOSFET- 3 Marks

    Q.4 i. Explanation of amplitude modulation- 2 Marks, 3


    Diagram- 1 Mark
    ii. Block diagram of communication system- 2 Marks, 7
    explanation of the functioning of each block-5 Marks
    OR iii. ‘Need for Modulation’- 5 Marks, 7
    Advantages- 2 Marks

    P.T.O.

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