Gondal M-2016-Facile Synthesis of Silicon Carbide-Titanium Dioxide Semiconducting Nanocoposite Using Pulsed Laser Ablation
Gondal M-2016-Facile Synthesis of Silicon Carbide-Titanium Dioxide Semiconducting Nanocoposite Using Pulsed Laser Ablation
Gondal M-2016-Facile Synthesis of Silicon Carbide-Titanium Dioxide Semiconducting Nanocoposite Using Pulsed Laser Ablation
a r t i c l e i n f o a b s t r a c t
Article history: Separation of photo-generated charge carriers (electron and holes) is a major approach to improve the
Received 11 January 2016 photovoltaic and photocatalytic performance of metal oxide semiconductors. For harsh environment like
Received in revised form 12 March 2016 high temperature applications, ceramic like silicon carbide is very prominent. In this work, 10%, 20% and
Accepted 17 March 2016
40% by weight of pre-oxidized silicon carbide was coupled with titanium dioxide (TiO2 ) to form nanocom-
Available online 19 March 2016
posite semiconductor via elegant pulsed laser ablation in liquid technique using second harmonic 532 nm
wavelength of neodymium-doped yttrium aluminium garnet (Nd-YAG) laser. In addition, the effect of
Keywords:
silicon carbide concentration on the performance of silicon carbide-titanium dioxide nanocomposite as
Silicon carbide-titanium dioxide
nanocomposite photo-anode in dye sensitized solar cell and as photocatalyst in photodegradation of methyl orange dye
Dye sensitized solar cells in water was also studied. The result obtained shows that photo-conversion efficiency of the dye sen-
Photo-conversion sitized solar cell was improved from 0.6% to 1.65% and the percentage of methyl orange dye removed
Pulsed laser ablation in liquid was enhanced from 22% to 77% at 24 min under ultraviolet–visible solar spectrum in the nanocompos-
ite with 10% weight of silicon carbide. This remarkable performance enhancement could be due to the
improvement in electron transfer phenomenon by the presence of silicon carbide on titanium dioxide.
© 2016 Elsevier B.V. All rights reserved.
http://dx.doi.org/10.1016/j.apsusc.2016.03.135
0169-4332/© 2016 Elsevier B.V. All rights reserved.
M.A. Gondal et al. / Applied Surface Science 378 (2016) 8–14 9
of free water which appears in TiO2 and all the synthesized T-SiC
nanocomposite due to presence of SiO2 .
The morphology of 6H-SiC integrated TiO2 is shown in Fig. 4.
The FE-SEM image depicted in Fig. 4(a) appears to be a wool
containing aggregates of particles which are clearly known to be
6H-SiC formed within the crystals of TiO2 . This can be described
as reinforcement of TiO2 NPs with 6H-SiC in surface coupled semi-
Fig. 2. (a) Absorbance spectra. (b) Tauc plot of TiO2 , 6H-SiC, T-SiC-10, T-SiC-20 and conductors of the nanocomposite. In order to confirm the image
T-SiC-40. obtained in FE-SEM image, the TEM image is also depicted in
Fig. 4(b) which also shows the presence of large particles integrated
The absorption spectra and the corresponding Tauc plot of 6H- within populated smaller particles. The larger particles known
SiC, TiO2 NPs and synthesized TiO2 -SiC nanocomposites (T-SiC-10, to be 6H-SiC have a lower concentration than the smaller par-
T-SiC-20 and T-SiC-40) are depicted in Fig. 2(a) and 2(b) respec- ticles known as TiO2 NPs because a low percentage weight of
tively. The SiC has a strong absorption in the deep UV–region at the 6H-SiC (∼10%) is present in the synthesized T-SiC-10 nanocom-
absorption edge of 260 nm with a band gap of ∼3.9 eV. However, the posite. Therefore, a perfect integration of 6H-SiC into the surface of
band gap of 3.17 eV is reported for the SiC in our previous work [27]. TiO2 NPs was well accomplished during the pulsed laser ablation
Therefore the broadened band gap is due to the presence of SiO2 process.
created on the surface of SiC after calcination. The TiO2 nanoparti- XPS analysis was performed to investigate the chemical state
cle has strong absorption at 324 nm with a band gap of ∼3.32 eV. of T-SiC-10 nanocomposite. The high resolution of Ti 2p spec-
The T-SiC-10, T-SiC-20 and T-SiC-40 nanocomposites show absorp- trum demonstrated two peaks at 458.9 eV (Ti 2p3/2 ) and 464.4 eV
tion peak at 322, 320 and 315 nm which correspond to a band gap (Ti 2p1/2 ) which confirms the existence of titanium. The Ti 2p3/2
of 3.4, 3.42 and 3.46 eV respectively. Therefore, compared to TiO2 , shown in Fig. 5(a) was deconvoluted into two peaks at 455.9 eV
there is a blue shift in the absorption peak due to the effect of deep and 458.0 eV which represents TiO [33] and TiO2 [34] respectively.
absorption edge of SiC on absorption peak of TiO2 . The Si 2p spectrum shown in Fig. 5(b) was fitted into three char-
Fig. 3 shows the FTIR spectra of TiO2 , 6H-SiC, and T-SiC acteristic peaks of Silicon state at 101.1 eV, 101.9 eV and 102.8 eV
nanocomposite. At 790 cm−1 is a strong peak which corresponds to which correspond to SiC [35], SiC-O [36] and TiO2 -SiO2 [37] respec-
Si-C bond stretching mode [31]. This stretching mode present in all tively. The O1s peaks shown in Fig. 5(b) was deconvoluted into two
the synthesized T-SiC nanocomposite enhanced the TiO2 stretching gaussian peaks at 529.1 eV and 531.7 eV which are signatures of
mode at this region. The 1104 cm−1 band assigned to the asym- oxygen states in metal oxide (TiO2 and SiO2 ) and carbonates [38].
metric Si-O-Si stretching vibration was also observed for the bond The high-resolution spectrum of C1s spectrum in Fig. 5(d) shows
between the silicon in 6H-SiC and oxygen in TiO2 NPs. Also around three small fraction peaks at 283.4 eV, 285.0 eV and 287.2 eV which
this region is the C H2 bond within SiCH2 wagging mode because are associated with carbide (SiC) [39], C C and C with O bond [38].
1104 cm−1 is broadened in all the synthesized T-SiC nanocomposite This explains that, a small percentage of SiO2 and SiC O was incor-
(T-SiC-10, T-SiC-20 and T-SiC-40). The presence of the 1380 cm−1 porated in the nanocomposite and there is exchange of elements
peak correspond to Ti-O-Ti bond in TiO2 [32] is observed in the between 6H-SiC and TiO2 during the ablation process.
T-SiC-10 nanocomposite, but absent in such as T-SiC-20 and T-
SiC-10 nanocomposite. This is because the quantity of 6H-SiC in 3.1. Photovoltaic performance of SiC–TiO2 nanocomposites
the T-SiC-10 nanocomposite is very small, less than 12%, for TiO2
bond to appear and become dominant. The band that appear at The current density–voltage (I–V) curves of TiO2 and synthe-
1633 cm−1 was assigned to the bending vibration of the O H bond sized TiO2 -SiC nanocomposite are as shown in Fig. 6. Table 1
of chemisorbed water during laser ablation and the broadband summarized photovoltaic parameters obtained from the DSSCs
around 3377 cm−1 was due to the stretching mode of the O H bond such as the Open circuit voltage (Voc), Short circuit current den-
M.A. Gondal et al. / Applied Surface Science 378 (2016) 8–14 11
Fig. 5. XPS spectral analysis of T-SiC nanocomposite showing deconvoluted peaks in the high resolution of the elements present (Ti, Si, O and C).
Table 1
Parameters of the DSSCs with TiO2 , T-SiC-10, T-SiC-20 and T-SiC-40.
Fig. 6. J–V curve of TiO2 , 6H-SiC, T-SiC-10, T-SiC-20 and T-SiC-40 based DSSC.
Fig. 8. Photo-degradation of MO (a) T-SiC-10, T-SiC-20 and T-SiC-40, (b) TiO2 , 6H-SiC
and T-SiC-10.
Acknowledgements
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