Test - Electronic Devices - 3 - 10 Questions MCQ Test GATE ECE (Electronics) 2023 Mock Test Series Electronics and Communication Engineering (ECE)

5/6/22, 12:11 PM Test: Electronic Devices - 3 | 10 Questions MCQ Test GATE ECE (Electronics) 2023 Mock Test Series
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Test: Electronic Devices - 3

10 Questions MCQ Test GATE ECE (Electronics) 2023 Mock Test Series | Test: Electronic Devices - 3
Description
Attempt Test: Electronic Devices - 3 | 10 questions in 30 minutes | Mock test for Electronics and
Communication Engineering (ECE) preparation | Free important questions MCQ to study GATE ECE
(Electronics) 2023 Mock Test Series for Electronics and Communication Engineering (ECE) Exam |
Download free PDF with solutions
QUESTION: 1
The open-circuit p-n junction diode without any Biasing is shown if NA = 2 × 1017/cm3, ND = 5
× 1016/cm3 then the depletion region width (W) is ______μm
A. 2.50 μm
B. 4 μm
C. 10 μm
D. 6 μm
https://edurev.in/course/quiz/attempt/7813_Test-Electronic-Devices-3/46f7266a-fe67-4fd3-92d1-89583232ca41 1/18
5/6/22, 12:11 PM Test: Electronic Devices - 3 | 10 Questions MCQ Test GATE ECE (Electronics) 2023 Mock Test Series Electronics and Communic…
Solution:
For the p-n junction diode, the depletion region width is given by
W = 10 μm
*Answer can only contain numeric values
QUESTION: 2
For the diode circuit shown below, If Vs = 24 sin 100πt, and the diode is practical with a cut in
voltage of 0.7 V. The conduction angle of the circuit is _______ Degrees.
Answer
Solution:
For practical diode

When
Vi > 12 + 0.7 = 12.7 diode conducts
i.e
24 sin θ >12.7
θ > 31.93
Conduction angle = 180 – 2 (31.93)
= 116.12°
QUESTION: 3
The correct output waveform for the circuit shown if the input is a sinusoidal signal of
maximum Amplitude Vmax is
A.
B.
C.
D.
Solution:
The circuit shown in a half-wave voltage double During Positive half cycle C1 and D1 Conducts and C is charged to
Vmax During Negative half cycle C2 and D2conducts and
Vout = Vmax + VCl
= 2 Vmax
QUESTION: 4
In the circuit shown, the forward biased LED has a voltage drop of 1.5 volts. If the battery
voltage is 6V. Then the power displaced in the resistor R in milliwatts is _________mW. Current
through LED is 15mA.
Answer
Solution:
If r is the internal resistance of LED
Total current =
As the drop across LED = 1.5 V

Internal resistance r =
The external resistance to be connected

R = 400 – 100 = 300Ω
Power dissipated in the resistor
I2R = 67.5 mW
QUESTION: 5
The voltage regulator circuit using a Zener diode is shown. The Zener diode current is limited in
the range 5 ≤ iz ≤ 100 mA
The range of load resistance is

A. 60 ≤ RL ≤ 372 Ω
B. 60 ≤ RL ≤ 200 Ω
C. 40 ≤ RL ≤ 192 Ω
D. 40 ≤ RL ≤ 360 Ω
Solution:
IZ = (125 - IZ)mA
Case A:
IZ = 5 mA
IZ = 120 mA
= 0.12 A
Case B:
IZ = 100 mA
IZ = (125 – 100) mA
= 25 mA
= 0.025 A
QUESTION: 6
For a P±n Si junction the reverse current at room temperature is 0.9 nA/cm2. If donor density is
1015 cm-3 and intrinsic carrier concentration is 1.05 × 1010. The minority carrier life time is
________ n sec.
[Assume μP = 450 cm2/V-sec, kT = 25mV ]
Answer
Solution:
For P±n junction the current density is given by
Substituting
DP = 0.025 × 450
= 11.25
τp = 4.32 × 10-9 sec
QUESTION: 7
The sketch of output voltage Vo vs. input voltage VI is of from
A.
B.
C.
D.
Solution:
For voltages -5V < VI < 5 V both the diodes are off since the diodes are reverse biased.
The output voltage Vo = VI

For VI ≤ -5V
The diode D1 is forward biased, while D2 is reverse biased
For VI ≥ 5 V
The diode D1 is reverse biased, while D2 is forward biased
Drawing sketch of Vo Vs VI
QUESTION: 8
Consider a pn junction at zero bias with an electric distribution as sketched below. Calculate the
built-in-potential
Answer
Solution:
The built in potential is the integral of election field at zero bais:
⇒ 75 × 10-2 V
⇒ 0.75 V
QUESTION: 9
The correct waveform of the output of the given circuit is
Assume the Zener diodes are ideal with threshold voltage Vk = 0.7
A.
B.
C.
D.
Solution:
For positive cycle when VI = 0.7 V, the 6 V Zener diode is forward biased while 4 V is reverse biased
For negative cycle VI <-0.7 V, the 6 V Zener diode is reverse biased 4 V Zener diode is forward biased
For -0.7 < VI < 0.7 both the diodes are reverse biased hence Vout = VI
The output waveform will be of form
QUESTION: 10
The correct statement regarding depletion and diffusion capacitance is

i) Depletion capacitance is dominant in reverse-bias voltage
ii) Diffusion capacitance is dominant in reverse-bias voltage
iii) The diffusion capacitance is due to a stored charge of minority electrons and minority holes
near the depletion region
iv) Depletion capacitance is directly proportional to the width of the depletion region
A. i, iii
B. iii, iv
C. ii, iii, iv
D. All the above
Solution:
Diffusion capacitance is due to transfer of minority carries during forward bias. The minority carries diffuse from one
end of junction to other, causing variation of charge with applied voltage. This leads to capacitance, it is present only in
forward bias and is significantly higher than depletion capacitance in forward bias.
Depletion capacitance is due to storage of charges in reverse bias junction, which acts like parallel plate capacitance
with forward voltage, the depletion width decreases increasing depletion capacitance. It is less than diffusion
capacitance in forward bias mode.
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5/6/22, 12:11 PM Test: Electronic Devices - 3 | 10 Questions MCQ Test GATE ECE (Electronics) 2023 Mock Test Series

Series Electronics and Communic…

Test: Electronic Devices - 3

*Answer can only contain numeric values

For practical diode

*Answer can only contain numeric values

If r is the internal resistance of LED

As the drop across LED = 1.5 V

The external resistance to be connected

The range of load resistance is

*Answer can only contain numeric values

For P±n junction the current density is given by

The sketch of output voltage Vo vs. input voltage VI is of from

The output voltage Vo = VI

*Answer can only contain numeric values

The built in potential is the integral of election field at zero bais:

The correct waveform of the output of the given circuit is

The correct statement regarding depletion and diffusion capacitance is

D. All the above

Use Code STAYHOME200 and get INR 200 additional OFF

Simple Present Tenses: Tenses

Test: Transfer Function

Test: Introduction to Control Systems

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Power Electronic Devices

Opto Electronic Junction Devices

Test: Electronic Devices - 3

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