VO617A

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Vishay Semiconductors
Optocoupler, Phototransistor Output, High Reliability, 5300 VRMS

FEATURES
• Operating temperature from -55 °C to +110 °C
• Good CTR linearity depending on forward current
• Isolation voltage, 5300 VRMS
• High collector emitter voltage, VCEO = 80 V
• Low saturation voltage
• Fast switching times
• Low CTR degradation
• Low coupling capacitance
• End stackable, 0.100" (2.54 mm) spacing
• High common mode interference immunity
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

DESCRIPTION
The 110 °C rated VO617A feature a high current transfer
ratio, low coupling capacitance and high isolation voltage.
These couplers have a GaAs infrared emitting diode, which
is optically coupled to a silicon planar phototransistor
detector, and is incorporated in a plastic DIP-4 package.
17918-24
The coupling devices are designed for signal transmission
between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm spacing.
Creepage and clearance distances of > 8.0 mm are
achieved with option 6 and option 8. This version complies
with IEC 60950 (DIN VDE 0805) for reinforced insulation up
A 1 4 C
to an operation voltage of 400 VRMS or DC. Specifications
subject to change.
C 2 3 E
APPLICATIONS
• AC adapters
• SMPS
• PLC
• Factory automation

AGENCY APPROVALS
LINKS TO ADDITIONAL RESOURCES
Safety application model number covering all products in
this data sheet is VO617A. This model number should be
Product Page Design Tools Models Footprints Related used when consulting safety agency documents.
Documents
• UL / cUL 1577
• DIN EN 60747-5-5 (VDE 0884-5), available with option 1
• BSI
• CQC GB4943.1-2011
• CQC GB8898-2011
• FIMKO

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ORDERING INFORMATION
DIP-4 Option 6
V O 6 1 7 A - # X 0 # # T

7.62 mm 10.16 mm
PART NUMBER CTR PACKAGE OPTION TAPE
BIN AND Option 7 Option 8
REEL

> 8 mm 9.27 mm

AGENCY CERTIFIED / CTR (%)

PACKAGE 5 mA
UL, cUL, BSI, FIMKO 50 to 600 40 to 80 63 to 125 100 to 200 160 to 320 80 to 160 130 to 260 200 to 400
DIP-4 VO617A VO617A-1 VO617A-2 VO617A-3 VO617A-4 VO617A-7 VO617A-8 VO617A-9
DIP-4, 400 mil, option 6 - - - VO617A- VO617A- - - -
3X006 4X006
SMD-4, option 7 - - VO617A- VO617A- VO617A- - - -
2X007T 3X007T 4X007T
VDE, UL, cUL, BSI, FIMKO 50 to 600 40 to 80 63 to 125 100 to 200 160 to 320 80 to 160 130 to 260 200 to 400
DIP-4, 400 mil, option 6 - - - VO617A- VO617A- VO617A- VO617A- VO617A-
3X016 4X016 7X016 8X016 9X016
SMD-4, option 7 - VO617A- VO617A- VO617A- VO617A- VO617A- VO617A- VO617A-
1X017T 2X017T 3X017T 4X017T 7X017T 8X017T 9X017T
SMD-4, 400 mil, option 8 VO617A- - - VO617A- VO617A- - - -
X018T 3X018T 4X018T
Note
• Additional options may be possible, please contact sales office

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER CONDITIONS SYMBOL VALUE UNIT
INPUT
Reverse voltage VR 6 V
Forward current IF 60 mA
Forward surge current tp ≤ 10 μs IFSM 1.5 A
LED power dissipation Pdiss 70 mW
OUTPUT
Collector emitter voltage VCEO 80 V
Emitter collector voltage VECO 7 V
Collector current IC 50 mA
Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA
Ouput power dissipation Pdiss 150 mW
COUPLER
Total power dissipation Ptot 200 mW
Operation temperature Tamb -55 to +110 °C
Storage temperature range Tstg -55 to +150 °C
Soldering temperature 2 mm from case, ≤ 10 s Tsld 260 °C
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability

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Ptot - Total Power Dissipation (mW)

250

200 Coupled device

150
Detector
100

50 LED

0
0 20 40 60 80 100 120

Tamb - Ambient Temperature (°C)

Fig. 1 - Total Power Dissipation vs. Ambient Temperature

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 60 mA - VF 1 1.35 1.65 V
Reverse current VR = 6 V - IR - 0.01 10 μA
Junction capacitance VR = 0 V, f = 1 MHz - Cj - 13 - pF
OUTPUT
VO617A-1 - 2 50
VO617A-2 - 2 50
VO617A-3 - 5 100
Collector emitter leakage current VCE = 10 V VO617A-4 ICEO - 5 100 nA
VO617A-7 - 5 100
VO617A-8 - 5 100
VO617A-9 - 5 100
Collector emitter capacitance VCE = 5 V, f = 1 MHz - CCE - 5.2 - pF
Collector emitter breakdown voltage IC = 1 mA - BVCEO 80 - - V
Emitter collector breakdown voltage IE = 100 μA - BVECO 7 - - V
COUPLER
Collector emitter saturation voltage IF = 5 mA, IC = 1.0 mA - VCEsat - 0.25 0.4 V
Coupling capacitance f = 1 MHz - CC - 0.4 - pF
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements

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CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
VO617A CTR 50 - 600 %
VO617A-1 CTR 40 - 80 %
VO617A-2 CTR 63 - 125 %
VO617A-3 CTR 100 - 200 %
IC/IF IF = 5 mA, VCE = 5 V
VO617A-4 CTR 160 - 320 %
VO617A-7 CTR 80 - 160 %
VO617A-8 CTR 130 - 260 %
VO617A-9 CTR 200 - 400 %

SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION CTR BIN SYMBOL MIN. TYP. MAX. UNIT
NON-SATURATED
Rise and fall time IF = 5 mA, VCC = 5 V, RL = 75 Ω - tr, tf - 2 - μs
Turn-on time - ton - 3 - μs
IF = 5 mA, VCC = 5 V, RL = 75 Ω
Turn-off time - toff - 2.3 - μs
Cut-off frequency IF = 5 mA, VCC = 5 V, RL = 75 Ω - fctr - 190 - kHz
SATURATED
Turn-on time IF = 5 mA - ton - 6 - μs
Turn-off time IF = 5 mA - toff - 25 - μs
Rise time IF = 5 mA - tr - 4.6 - μs
Fall time IF = 5 mA - tf - 15 - μs

IF IF +5V IF
0
0
tp t
IC
R G = 50 Ω 100 %
tp 90 %
= 0.01
T
t p = 50 µs
Channel I
Oscilloscope
R L = 1 MΩ 10 %
Channel II
C L = 20 pF 0
50 Ω RL tr
td tf t
ts
t on t off
95 10804-3
tp Pulse duration ts Storage time
Fig. 2 - Test Circuit, Non-Saturated Operation td Delay time tf Fall time
tr Rise time t off (= ts + tf) Turn-off time
t on (= td + tr) Turn-on time 96 11698
IF I F = 10 mA +5V
0 Fig. 4 - Switching Times
IC

R G = 50 Ω
tp
= 0.01
T
t p = 50 µs
Channel I
Oscilloscope
R L ≥ 1 MΩ
Channel II
C L ≤ 20 pF
50 Ω 1 kΩ

95 10843

Fig. 3 - Test Circuit, Saturated Operation

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SAFETY AND INSULATION RATINGS

PARAMETER CONDITION SYMBOL VALUE UNIT
Climatic classification According to IEC 68 part 1 55 / 115 / 21
Pollution degree According to DIN VDE 0109 2
Comparative tracking index Insulation group IIIa CTI 175
Maximum rated withstanding isolation voltage According to UL1577, t = 1 min VISO 5300 VRMS
Maximum transient isolation voltage According to DIN EN 60747-5-5 VIOTM 8000 Vpeak
Maximum repetitive peak isolation voltage According to DIN EN 60747-5-5 VIORM 890 Vpeak
Tamb = 115 °C, VIO = 500 V RIO ≥ 1011 Ω
Isolation resistance
Tamb = 175 °C, VIO = 500 V RIO ≥ 109 Ω
Output safety power PSO 700 mW
Input safety current ISI 400 mA
Input safety temperature TS 175 °C
Creepage distance DIP-4 ≥7 mm
Clearance distance DIP-4 ≥7 mm
Creepage distance DIP-4, 400 mil, option 6 ≥8 mm
Clearance distance DIP-4, 400 mil, option 6 ≥8 mm
Creepage distance SMD-4, option 7 ≥7 mm
Clearance distance SMD-4, option 7 ≥7 mm
Creepage distance SMD-4, 400 mil, option 8 ≥8 mm
Clearance distance SMD-4, 400 mil, option 8 ≥8 mm
Insulation thickness DTI ≥ 0.4 mm
Note
• As per DIN EN 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of protective circuits

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TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

100 14
Tamb = 110 °C IF = 10 mA

IC - Collector Current (mA)

12
IF - Forward Current (mA)

Tamb = 75 °C
Tamb = 25 °C
Tamb = 0 °C 10
10
Tamb = -55 °C
8 IF = 5 mA

6
1
4 IF = 1 mA
IF = 2 mA
2

0.1 0
0.6 0.8 1.0 1.2 1.4 1.6
0 0.1 0.2 0.3 0.4
VF - Forward Voltage (V) VCE - Collector Emitter Voltage (V)

Fig. 5 - Forward Voltage vs. Forward Current Fig. 8 - Collector Current vs. Collector Emitter Voltage

NCTR - Normalized CTR (non-saturated)

55 1.2
IF = 35 mA
50 IF = 5 mA, VCE = 5 V
IC - Collector Current (mA)

45 1.0
IF = 30 mA
40
35 IF = 25 mA 0.8
30
IF = 20 mA 0.6
25
20 IF = 15 mA
0.4
15
IF = 10 mA
10 IF = 1 mA
0.2
5 Normalized to CTR value:
IF = 5 mA IF = 5 mA, VCE = 5 V, Tamb = 25 °C
0 0
0 1 2 3 4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120
VCE - Collector Emitter Voltage (V)
Tamb - Ambient Temperature (°C)

Fig. 6 - Collector Current vs. Collector Emitter Voltage Fig. 9 - Normalized Current Transfer Ratio (non-sat.) vs.
Ambient Temperature

10 000 1.2
IF = 0 mA IF = 5 mA, VCE = 0.4 V
NCTR - Normalized CTR (sat)
ICE0 - Leakage Current (nA)

1000 1.0
VCE = 40 V
100
0.8
10
0.6
1 VCE = 24 V
0.4
0.1
VCE = 12 V
0.01 0.2
Normalized to CTR value:
IF = 5 mA, VCE = 5 V, Tamb = 25 °C
0.001 0
-60 -40 -20 0 20 40 60 80 100 120 -60 -40 -20 0 20 40 60 80 100 120

Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C)

Fig. 7 - Leakage Current vs. Ambient Temperature Fig. 10 - Normalized Current Transfer Ratio (sat.) vs.
Ambient Temperature

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0.40 0
VCEsat - Collector Emitter Voltage (V)

IF = 10 mA VCE = 5 V
0.35 -20
RL = 100 Ω
0.30 -40
Ic = 5 mA

Phase Angle (deg)

0.25 -60 RL = 1000 Ω

0.20 Ic = 2 mA -80

0.15 -100

0.10 -120

0.05 Ic = 1 mA
-140

0.00 -160
-60 -40 -20 0 20 40 60 80 100 120 1 10 100 1000
Tamb - Ambient Temperature (°C) f - Frequency (kHz)

Fig. 11 - Collector Emitter Voltage vs. Ambient Temperature Fig. 14 - Phase Angle vs. Frequency

1.4 1000

FCTR - Cut-Off Frequency (kHz)

Tamb = 0 °C VCC = 5 V
NCTR - Normalized CTR (NS)

1.2
Tamb = -55 °C
1.0 Tamb = 25 °C
100
0.8

0.6
Tamb = 75 °C
10
0.4 Tamb = 100 °C
Normalized to:
0.2 IF = 5 mA, VCE = 5 V,
Tamb = 25 °C
0 1
0.1 1 10 100
0.1 1 10 100
IF - Forward Current (mA) IC - Collector Current (mA)

Fig. 12 - Normalized CTR (non-sat.) vs. Forward Current Fig. 15 - Cut-Off Frequency vs. Collector Current

1.2 1000
VCE = 0.4 V Tamb = 0 °C VCE = 5 V, IF = 2 mA
NCTR - Normalized CTR (sat)

ton, toff - Switching Time (μs)

Normalized to: Tamb = -55 °C

1.0
IF = 5 mA,
VCE = 5 V, 100 toff (μs)
0.8 Tamb = 25 °C

0.6 10

0.4 ton (μs)

Tamb = 25 °C 1
0.2
Tamb = 75 °C
Tamb = 100 °C
0 0.1
0 5 10 15 20
0.1 1 10 100
IF - Forward Current (mA) RL - Load Resistance (kΩ)

Fig. 13 - Normalized CTR (sat.) vs. Forward Current Fig. 16 - Switching Time vs. Load Resistance

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PACKAGE DIMENSIONS (in millimeters)

1.2 ± 0.1

4 3

Pin 1 identifier 6.5 ± 0.5

1 2
0.85 ± 0.1

4.58 ± 0.3 7.62 ± 0.3

0.85 ± 0.1

3.5 ± 0.3

1.2 ± 0.1 0.5 typ.

3.3 ± 0.5 0.26

2.8 ± 0.5

0.5 ± 0.1

2.54 ± 0.25 7.62 to 9.98

Option 6 Option 7 Option 8

7.62 typ. 7.62 typ. 7.62 typ.

+ 0.25
3.5 ± 0.3 0.35 - 0.3 3.5 ± 0.3 3.5 ± 0.3

0.1 min. 0.25 ± 0.1

0.6 min. 9.27 min.

2.7 min. 8 min.

10.16 ± 0.3 12.1 max.

10.16 typ.
0.76

0.76
R 0.25 R 0.25
2.54

2.54
1.78

1.78
1.52 8 min. 1.52 9.95 min.

11.05 13

Fig. 17 - Package Drawings

PACKAGE MARKING

VO617A-3
V YWW 25

Fig. 18 - Example of VO617A-3X017T

Notes
• The VDE logo is only marked on option 1 parts. Option information is not marked on the part
• Tape and reel suffix (T) is not part of the package marking

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PACKING INFORMATION
DEVICE PER TUBE
TYPE UNITS/TUBE TUBES/BOX UNITS/BOX
DIP-4 100 40 4000

DEVICE PER TAPE AND REEL

TYPE UNITS/REEL
SMD-4, option 7 1000
SMD-4, 400 mil, option 8 2000

Regular, special,
or bar code label

Tape slot in core

13"

17999-1

Fig. 19 - Tape and Reel Shipping Medium

Ø 1.55 ± 0.05 2 ± 0.1 4 ± 0.1 1.75 ± 0.1

7.5 ± 0.1
16 ± 0.3

12 ± 0.1
0.3 ± 0.05

Fig. 20 - Tape and Packing for Option 7 (1000 units per reel)

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1.75 ± 0.1
4 ± 0.1 8 ± 0.1 2 ± 0.1
Ø 1.50 ± 0.05

11.5 ± 0.1
24 ± 0.3
0.4 ± 0.05
Fig. 21 - Tape and Reel Packaging for Option 8 (2000 units per reel)

SOLDER PROFILES
Axis Title Axis Title
300 10000 300 10000
5s
Lead temperature Max. 260 °C
250 255 °C
250 240 °C
245 °C
235 °C to
260 °C Second Full line: typical
wave 217 °C
Dotted lines:
Temperature (°C)

First wave 200 1000

Temperature (°C)

200 process limits 1000

Max. 30 s

2nd line
2nd line

1st line
2nd line
2nd line

ca. 2 K/s
1st line

ca. 200 K/s

150 150
100 °C to
Max. 120 s Max. 100 s
130 °C
100 100 100 100
Max. ramp down 6 °C/s
2 K/s ca. 5 K/s
50 50 Max. ramp up 3 °C/s
Forced cooling

0 10 0 10
0 50 100 150 200 250 0 50 100 150 200 250 300
948626 Time (s) 19841 Time (s)

Fig. 22 - Wave Soldering Double Wave Profile Fig. 23 - Lead (Pb)-free Reflow Solder Profile
According to J-STD-020 for DIP Devices According to J-STD-020 for SMD Devices

HANDLING AND STORAGE CONDITIONS

ESD level: HBM class 2
Floor life: unlimited
Conditions: Tamb < 30 °C, RH < 85 %
Moisture sensitivity level 1, according to J-STD-020

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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
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