Rochd 2018
Rochd 2018
Rochd 2018
DOI: 10.1002/sia.6553
RESEARCH ARTICLE
KEY W ORDS
Surf Interface Anal. 2018;1–5. wileyonlinelibrary.com/journal/sia © 2018 John Wiley & Sons, Ltd. 1
2 ROCHD ET AL.
and Grossman24 have studied the resistance of the graphene mem- 3 | CALCULATION DETAILS
brane by performing a deformation stress by applying the mechanical
deformation rate. Graphene is one of the most rigid materials (modulus approximately
In the vast majority of cases, sputtering is caused by a momentum 1 TPa) and the strongest (resistance approximately 100 GPa).28 There-
transfer process.25 In this work, the computer simulation program fore, we will study its sputtering yield by bombarding it with Na and Cl
SRIM‐2013 was employed to calculate the sputtering yields of both ions with energy that goes from 0 to 100 eV range, and we will then
graphene and SiC membranes by low‐energy Na and Cl ions bombard- measure its impact on the graphene and SiC membrane. We carried
ment. Moreover, the comparison between these membranes was elu- out simulations by the Monte Carlo SRIM that uses the binary collision
cidated in this paper. approximation (BCA), applied to ion‐solid interactions (software pack-
age created by J.F. Ziegler and J.P. Biersack)15; these calculations are
made in two different cases, when the ions are normal on the surface,
2 | S P U TT ER I N G T H EO RY
and also for different angles of incidence. The number of ions
impacting is 100 000.
Sputtering yield is the average number of atoms removed to incident
particle, as stated in the following equation:
• Graphene membrane: Density = 2.26 g/cm3; thickness = 3.605 Å.
The collision on target atoms causes the recoil atoms to overcome sur-
face binding energy, which can be expressed as sputtering yield26: 4 | RESULTS AND DISCUSSION
YðE0 ; θ0 Þ ¼ ⋀ FD ð0; E0 ; θ0 Þ: (2) In this section, we present numerical simulations of the sputtering
yields of graphene and SiC membrane as a function of energy, thick-
As that ⋀ is factor associated with target material, and FD is the
ness, and density of membrane, then according to the angle of inci-
surface binding energy that can be expressed by26
dence of Na and Cl ions.
First of all, we notice in Figure 1 sputtering yields at normal inci-
FD ð0; E0 ; θ0 Þ ¼ α N Sn ðE0 Þ: (3)
dence as a function of projectile energy E of the two Na and Cl ions;
we note here that the sputtering yield in the case of the Na ion is
As that Sn(E0) is a nuclear‐stopping cross section, and α is the cor-
greater by comparing it with the sputtering yield in the case of the
rection factor, which is a function of the mass ratio between
Cl ion. They also have a different threshold energy. Concerning Na
bombarding target mass to the mass of the particle projectile M2/M1,
ion, we observe in this figure at the beginning the absence of the
and θ0 is initial angle of incidence, and N is atomic density of the tar-
sputtering yields, by increasing the energy of bombardment of the
get, so it can be described as sputtering yield.26
ion from 22 eV to 100 eV, the sputtering yields will increase. We also
Y ðE; ηÞ ¼ ⋀α N Sn ðE0 Þ (4) notice that the efficiency coefficient of the sputtering yield is very low
(from 0 to 0.04). On the other hand, in the case of the Cl ion, we
As ƞ is a generic parameter of energy. To accurately calculate the observe in this figure at the beginning the absence of sputtering yields,
sputtering yield, it can be used for nuclear‐stopping cross section, as by increasing the energy of bombardment of the ion from 37 eV to
given by the Sn(E0) equation.27 100 eV, the sputtering yields will increase. We also notice that the
efficiency coefficient of the spray is very low (from 0 to 0.025).
8:462 Z1 Z2 h i
Sn ðEÞ ¼ Sn ðεÞ 10−15 eV:cm2 (5)
ð1 þ M2 =M1 Þ Z10;23 þ Z20;23
32:53 M2 E
ε¼ : (6)
Z1 Z2 ð1 þ M2 =M1 Þ Z0;23
1 þ Z0;23
2
Sn(ε) limits the decline in the nuclear cross section. The energy
unit of the ion incident E is keV, and pack of ions energy ε ≤ 30. It
is described by the following equation.26
0:5 lnð1 þ 1383εÞ FIGURE 1 The graphene sputtering yield under the Na and Cl ions
Sn ðεÞ ¼ : (7)
ε þ 0:0132ε0:21226 þ 0:19593ε0:5 bombardment as a function of energy
ROCHD ET AL. 3
FIGURE 2 The graphene sputtering yield under the Na and Cl ions FIGURE 5 The graphene sputtering yield under the Na and Cl ions
bombardment as a function of the angle of incidence bombardment as a function of the thickness of the membrane
of the incident particle until it reaches its maximum in the range 60° to
76°, and the part where the sputtering yield decreases at very high
energy due to the ion reflection.29
Finally, we can deduce that the sputtering yield is very low at the
angle of incidence of 0° and high at the angle of incidence of 60°. So
the graphene membrane needs a specific angle of incidence to pulver-
ize. And we deduce that the increase of thickness protects the mem-
brane against the sputtering yield. Rather, the increase of density
favored the pulverization.
5 | CO NC LUSIO N
ORCID
Sanaa Rochd http://orcid.org/0000-0002-0826-2844
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