RCA Transistor Manual 1964 (Original)
RCA Transistor Manual 1964 (Original)
RCA Transistor Manual 1964 (Original)
Manual
eCLUD'NG RECTIFIERS, SILICON CONTROLLED RECTIFIERS,
VARACTOR DIODES, AND TUNNEL DIODES
Tech cal(Series
RCA
TRANSISTOR
MANUAL
Revised and up-dated for the reader
who wants to be informed of the
latest changes in semiconductor-de-
vice technology and data. Features
over 200 additions to RCA's exten-
sive line of semiconductor products.
The popular Circuits Section has
also been revised to include several
new interesting and practical circuit
applications.
NEW FEATURES
• Complete chapter on silicon con-
trolled rectifiers discussing basic
operation and applications.
• Revised application guide speci-
fying recommended usage for
RCA transistors.
• Additions to the expanded Tech-
nical Data Section include va-
ractor diodes, silicon controlled
rectifiers, high-voltage rectifiers,
tunnel diodes, and many new
types of transistors.
• AND, for the experimenter and
hobbyist, several new circuits
including two portable radio re-
ceivers, a variety of hi-fi and
stereo components, a five-watt
citizens-band transmitter, ignition
systems, electronic control cir-
cuits, and many other popular
applications.
Copyright 1964 by
3
4 RCA Transistor Manual
ELECTRON-PAIR SEMICONDUCTOR
BONDS ATOMS
reduced.
The vacancy or hole in the crystal where the two materials meet (called
structure is considered to have a the p-n junction). An interaction
takes place between the two types
ELECTRON-PAIR SEMICONDUCTOR of material at the junction as a re-
BONDS ATOMS sult of the holes in one material and
the excess electrons in the other.
When a p-n junction is formed,
some of the free electrons from the
n-type material diffuse across the
junction and fill holes in the lattice
structure of the p-type material.
This interaction or diffusion occurs
for a short time in the immediate
vicinity of the junction, and produces
a small space-charge region (some-
IMPURITY/ VACANCY times called the transition region or
ATOM (HOLE) depletion layer). The p-type material
Figure 4. Lattice structure of p-type in this region acquires a slight nega-
material. tive charge as a result of the addi-
6 RCA Transistor Manual
P IN
L J
+ +III _
(o) REVERSE BIAS (b) FORWARD BIAS
rial can then penetrate the space- rent flow is not materially reduced.
charge region, flow across the junc- A device containing two p-n junc-
tion, and move by way of the holes tions biased in opposite directions
in the p-type material toward the can operate in this fashion.
positive terminal of the battery. This Such a two-junction device is
electron flow continues as long as shown in Fig. 9. The thick end layers
the external voltage is applied. Un-
der these conditions, the junction is
said to be forward-biased.
The generalized voltage-current
characteristic for a p-n junction in
Fig. 8 shows both the reverse-bias
and forward-bias regions. In the
forward-bias region, current rises
FORWARD
CURRENT are made of the same type of mate-
REVERSE BIAS
rial (n-type in this case), and are
separated by a very thin layer of the
FORWARD 8IAS —3>
opposite type of material (p-type in
REVERSE the device shown). By means of the
CURRENT
external batteries, the left-hand (n-p)
1 CURRENT (µA)
junction is biased in the forward
direction to provide a low-resistance
input circuit, and the right-hand
Figure 8. Voltage-current characteristic for
a p-n junction. (p-n) junction is biased in the re-
verse direction to provide a high-
resistance output circuit.
rapidly as the voltage is increased
Electrons flow easily from the left-
and is quite high. Current in the
hand n-type region to the center p-
reverse-bias region is usually much
lower. Excessive voltee (bias) in type region as aresult of the forward
biasing. Most of these electrons dif-
either direction should be avoided in
fuse through the thin p-type region,
normal applications because exces-
however, and are attracted by the
sive currents and the resulting high
positive potential of the external bat-
temperatures may permanently dam-
tery across the right-hand junction.
age the semiconductor device.
In practical devices, approximately
95 to 99.5 per cent of the electron
N-P-N AND P-N-P STRUCTURES current reaches the right-hand n-
Fig. 7 shows that a p-n junction type region. This high percentage of
biased in the reverse direction is current penetration provides power
equivalent to a high-resistance ele- gain in the high-resistance output
ment (low current for a given ap- circuit and is the basis for transistor
plied voltage), while a junction amplification capability.
biased in the forward direction is The operation of p-n-p devices is
equivalent to a low-resistance ele- similar to that shown for the n-p-n
ment (high current for a given ap- device, except that the bias-voltage
plied voltage). Because the power polarities are reversed, and electron-
developed by a given current is current flow is in the opposite direc-
greater in a high-resistance element tion. (Many discussions of semicon-
than in a low-resistance element ductor theory assume that the "holes"
(P =PR), power gain can be ob- in semiconductor material constitute
tained in a structure containing two the charge carriers in p-n-p devices,
such resistance elements if the cur- and discuss "hole currents" for these
8 RCA Transistor Manual
13a, electrons flow from the emitter conductor diodes, the arrow indicates
to the collector. In the p-n-p tran- the direction of "conventional cur-
sistor shown in Fig. 13b, electrons rent flow" in the circuit.)
The first two letters of the n-p-n
and p-n-p designations indicate the
EMITTER COLLECTOR
respective polarities of the voltages
applied to the emitter and the
collector in normal operation. In
BASE
an n-p-n transistor, the emitter is
(o) N—P—N TRANSISTOR made negative with respect to both
the collector and the base, and the
collector is made positive with re-
spect to both the emitter and the
EMITTER Ç COLLECTOR base. In a p-n-p transistor, the emit-
ter is made positive with respect to
both the collector and the base, and
BASE the collector is made negative with
respect to both the emitter and the
(b) P—N—P TRANSISTOR
bee.
Figure 13. Schematic symbols for The transistor, which is a three-
transistors.
element device, can be used for a
wide variety of control functions, in-
flow from the collector to the emit- cluding amplification, oscillation, and
ter. In other words, the direction of frequency conversion. Transistor
de electron current is always oppo- characteristics and applications are
site to that of the arrow on the discussed in detail in the following
emitter lead. (As in the case of semi- sections.
Transistor Designs and
Circuit Configurations
N—TYPE
MATERIAL P—TYPE
REGIONS
EMITTER CONTACT
10
Transistor Designs and Circuit Configurations 11
COLLECTOR
(ORIGINAL
EMITTER WAFER)
Figure 17. Structure of drift-field transistor.
(b)
Mesa and planar transistors use Figure 18. Structure of (a) mesa transistor
newer construction techniques which and (b) epitaxial transistor.
are better suited to many applica- BASIC CIRCUITS
tions than the grown-junction or
alloy methods. These transistors in- There are three basic ways of con-
volve two basic processes: (1) the necting transistors in a circuit:
use of diffusion masking materials common-base, common-emitter, and
and photolithographic techniques to common-collector. In the common-
obtain a planar structure in which base (or grounded-base) connection
all the p-n junctions are buried un- shown in Fig. 21, the signal is intro-
der a protective passivating layer, duced into the emitter-base circuit
and (2) the use of a separate collec- and extracted from the collector-base
tor-contact diffusion or an epitaxial circuit. (Thus the base element of the
growth to reduce the electrical series transistor is common to both the in-
resistance in the collector. In these put and output circuits.) Because the
12 RCA Transistor Manual
ritoEidentify
term "characteristic" is used
the distinguishing elec-
tained by varying the base-to-emitter
(bias) voltage at a specified or con-
trical features and values of a tran- stant collector voltage, and measur-
sistor. These values may be shown ing collector current for different
in curve form or they may be tabu- base currents. A collector-character-
lated. When the characteristics values istic family of curves is shown in Fig.
are given in curve form, the curves 24. Fig. 25 shows the transfer-
may be used for the determination characteristic family of curves for
of transistor performance and the the same transistor.
calculation of additional transistor
parameters. TYPICAL COLLECTOR CHARACTERISTICS
TYPE 2N2IO2
Characteristics values are obtained COMMON -EMITTER CIRCUIT, BASE INPUT.
%0 AMBIENT TEMPER-
from electrical measurements of tran- ATURE •25' C
5
sistors in various circuits under cer- 6
,.......-
tain definite conditions of current and 4
voltage. Static characteristics are ob-
tained with de potentials applied to
the transistor electrodes. Dynamic 2
ing conditions.
Published data for transistors in-
clude both electrode characteristic TYPICAL TRANSFER CHARACTERISTICS
14
15
Transistor Characteristics
Io 0.98 1 n.
a= — o.vo
100
Breakdown voltages may be meas-
GAIN-BANDWIDTH
-PRODUCT
ured with the third electrode open,
(commoN-Emirree, shorted, or biased in either the for-
ward or the reverse direction. For
example, Fig. 28 shows a series of
collector-characteristic curves for
aCUTOFF:
different base-bias conditions. It can
be seen that the collector-to-emitter
breakdown voltage increases as the
base-to-emitter bias decreases from
the normal forward values through
zero to reverse values. The symbols
0.1 shown on the abscissa are sometimes
10 3 10 3 le 10 3 le 10T 108 used to designate collector-to-emitter
FREQUENCY—CPS breakdown voltages with the base
Figure 27. Forward current-transfer ratio open (BVcE0), with external base-to-
as a function of frequency.
emitter resistance (BVcEE), with the
base shorted to the emitter (BVcE8),
unchanged. Thus, if an emitter-to- and with a reverse base-to-emitter
base voltage change of 0.1 volt causes voltage (BV cEx).
a collector-current change of 3 milli-
amperes (0.003 ampere) with other As the resistance in the base-to-
voltages constant, the transconduct- emitter circuit decreases, the col-
ance is 0.003 divided by 0.1, or 0.03 lector characteristic develops two
mho. (A "mho" is the unit of con- breakdown points, as shown in Fig.
ductance, and was named by spelling 28. After the initial breakdown, the
"ohm" backward.) For convenience, collector-to-emitter voltage decreases
a millionth of a mho, or a micro- with increasing collector current
mho (mho), is used to express trans.. until another breakdown occurs at a
conductance. Thus, in the example, lower voltage. This minimum collec-
0.03 mho is 30,000 micromhos. tor-to-emitter breakdown voltage is
Cutoff currents are small de reverse called the sustaining voltage.
currents which flow when atransistor
(In large-area power transistors,
is biased into non-conduction. They
consist of leakage currents, which there is a destructive mechanism
are related to the surface character- referred to as "second breakdown".
This condition is not avoltage break-
istics of the semiconductor material,
down, but rather an electrically and
and saturation currents, which are
thermally regenerative process in
related to the impurity concentration
which current is focused in a very
in the material and which increase
small area of the order of the diam-
with increasing temperatures. Col-
eter of a human hair. The very
lector-cutoff current is the de current
high current, together with the volt-
which flows in the reverse-biased
age across the transistor, causes a
collector-to-base circuit when the
localized heating that may melt a
emitter-to-base circuit is open.
minute hole from the collector to the
Emitter-cutoff current is the cur-
emitter of the transistor and thus
rent which flows in the reverse-
cause a short circuit. This regenera-
biased emitter-to-base circuit when
tive process is not initiated unless
the collector-to-base circuit is open.
certain high voltages and currents
Transistor breakdown voltages de- are coincident for certain finite
fine the voltage values between two lengths of time.)
specified electrodes at which the crys-
tal structure changes and current The curves at the left of Fig. 28
begins to rise rapidly. The voltage show typical collector characteristics
then remains relatively constant over under normal forward-bias condi-
a wide range of electrode currents. tions. For agiven base input current,
Transistor Characteristics 17
BVCEX
COLLECTOR-TO-EMITTER VOLTAGE
(a) (b)
Figure 29. Biasing network for common-base circuit for (a) n-p-n and (b) p-n-p transistors.
18
Transistor Applications 19
caused by a change in emitter ments shown in Figs. 31, 32, 33, and
current, therefore, automatically 34 may be used. However, the sta-
changes the base bias. This type of bility of Figs. 31, 32, and 34 may be
circuit provides less gain than the poor unless the voltage drop across
circuit of Fig. 31, but is commonly the load resistor RL is at least one-
used because of its inherent stability. third the value of the supply volt-
The common-emitter circuits shown age. The determining factors in the
in Figs. 33 and 34 may be used to selection of the biasing circuit are
provide stability and yet minimize usually gain and circuit stability.
loss of gain. In Fig. 33, a resistor In many cases, the bias network
RE is added to the emitter circuit, may include special elements to com-
and the base resistor R2 is returned pensate for the effects of variations
in ambient temperature or in sup-
ply voltage. For example, the therm-
istor (temperature-sensitive resis-
tor) shown in Fig. 35a is used to
compensate for the rapid increase
of collector current with increasing
temperature. Because the thermistor
resistance decreases as the tempera-
ture increases, the bias voltage is
reduced and the collector current
Figure 33. Bias network using emitter tends to remain constant. The addi-
stabilizing resistor. tion of the shunt and series resist-
ances provides most effective corn-
to the positive terminal of the bat-
tery instead of to the collector. The SUPPLY
VOLTAGE V
SO01
U-T
P ALG
P YE
emitter resistor Rio provides addi-
tional stability; it is bypassed with
capacitor CB. The value of Cm is
usually about 50 microfarads, but
may be much higher depending, BIAS BIAS
VOLTAGE VOLTAGE
among other things, on the lowest
frequency to be amplified.
In Fig. 34, the Mi., voltage-divider
network is split, and all ac feedback
currents through R2 are shunted to
DIODE
ground (bypassed) by capacitor Ci.
The value of R, is usually larger
than the value of R2. The total re-
sistance of It2 and R2 should equal
THERMISTOR
the resistance of Ri in Fig. 32.
(a) (b)
Figure 35. Bias networks Including (a) a
thermistor and (b) a temperature- and
voltage-compensating diode.
(a)
(b)
Figure 37. (a) Two-stage resistance-capacitance-coupled circuit and (b) two-stage direct-
coupled circuit.
Transistor Applications 23
ance values for three typical circuit can be used only in class A ampli-
configurations. The maximum value fiers. For class AB or class B audio-
which SF can assume is the value amplifier service, abalanced amplifier
of beta. stage using two transistors is re-
quired. A push-pull stage can also
be used in class A audio amplifiers
AMPLIFICATION to obtain reduced distortion and
greater power output. Class C ampli-
The amplifying action of a tran-
fiers cannot be used for audio appli-
sistor can be used in various ways
cations.
in electronic circuits, depending on
the results desired. The four recog-
nized classes of amplifier service can
Audio Amplifiers
be defined for transistor circuits as Audio amplifier circuits are used
follows: in radio and television receivers,
A class A amplifier is an amplifier public address systems, sound re-
in which the base bias and alter- corders and reproducers, and similar
nating signal are such that collector applications to amplify signals in the
current in a specific transistor flows frequency range from 10 to 20,000
continuously during the complete cycles per second. Each transistor in
electrical cycle of the signal, and an audio amplifier can be considered
even when no signal is present. as either a current amplifier or a
A class AB amplifier is an ampli- power amplifier.
fier in which the base bias and alter- Simple class A amplifier circuits
nating signal are such that collector are normally used in low-level audio
current in a specific transistor flows stages such as preamplifiers and
for appreciably more than half but drivers. Preamplifiers usually follow
less than the entire electrical cycle. low-level output transducers such as
A class B amplifier is an amplifier microphones, hearing-aid and phono-
in which the base is biased to ap- graph pickup devices, and recorder-
proximately collector-current cutoff, reproducer heads.
so that collector current is approxi- One of the most important char-
mately zero when no signal is ap- acteristics of a low-level amplifier
plied, and so that collector current circuit is its signal-to-noise ratio,
in a specific transistor flows for ap- or noise figure. The input circuit of
proximately one-half of each cycle an amplifier inherently contains some
when an alternating signal is ap- thermal noise contributed by the re-
plied. sistive elements in the input device.
A class C amplifier is an amplifier All resistors generate a predictable
in which the base is biased to such quantity of noise power as a result
a degree that the collector current of thermal activity. This power is
in each transistor is zero when no about 160 db below one watt for a
signal is applied, and so that col- bandwidth of 10 kilocycles.
lector current in a specific transistor When an input signal is amplified,
flows for appreciably less than one- therefore, the thermal noise gener-
half of each cycle when an alter- ated in the input circuit is also
nating signal is applied. amplified. If the ratio of signal
For radio-frequency (rf) ampli- power to noise power (S/N) is the
fiers which operate into selective same in the output circuit as in the
tuned circuits, or for other ampli- input circuit, the amplifier is con-
fiers in which distortion is not a sidered to be "noiseless" and is said
prime factor, any of the above classes to have a noise figure of unity, or
of amplification may be used with zero db.
either a single transistor or a push- In practical circuits, however, the
pull stage. For audio-frequency (af) ratio of signal power to noise power
amplifiers in which distortion is an is inevitably impaired during ampli-
important factor, single transistors fication as a result of the generation
Transistor Applications 25
AMPLIFIER AMPLIFIER]
STAGE STAGE
AMPLIFIER AMPLIFIER
STAGE STAGE
This network provides equalization the circuit. Volume controls and their
comparable to that obtained with Fig. associated circuits should permit var-
40, but is more suitable for low-level iation of gain from zero to maxi-
amplifier stages because it does not mum, and should attenuate all
require high-level low frequencies. frequencies equally for all positions
In addition, the inverse feedback im- of the variable arm of the control.
proves the distortion characteristics Several examples of volume controls
of the amplifier. and tone controls are shown in the
As mentioned previously, it is Circuits Section.
undesirable to use a high-resistance Driver stages in audio amplifiers
signal source for an audio amplifier are located immediately before the
because of the high noise figure in- power-output stage. When a single-
volved. High source resistance can- ended class A output stage is used,
not be avoided, however, if an input the driver stage is similar to a pre-
device such as a crystal pickup is amplifier stage. When a push-pull
used. In such cases, the use of nega- output stage is used, however, the
tive feedback to raise the input im- audio driver must provide two output
pedance of the amplifier circuit (to signals, each 180 degrees out of
avoid mismatch loss) is no solution phase with the other. This phase re-
because feedback cannot improve the quirement can be met by use of a
signal-to-noise ratio of the amplifier. tapped-secondary transformer be-
A more practical method is to in- tween a single-ended driver stage
crease the input impedance some- and the output stage, as shown in
what by operating the transistor at Fig. 42. The transformer T. provides
TO Cli
TO Oz
the lowest practical current level and the required out-of-phase input sit-
by using a transistor which has a nais for the two transistors Q, and
high forward current-transfer ratio. Q. in the push-pull output stage.
Some preamplifier or low-level Transistor audio power amplifiers
audio amplifier circuits include vari- may be class A single-ended stages,
able resistors or potentiometers which or class A, class AB, or class B
function as volume or tone controls. push-pull stages. A simple class A
Transistor Applications 27
T2
2 TO
E.SPEAKER
•
Tuned Amplifiers
In transistor radio-frequency (rf)
and intermediate-frequency (if) am-
plifiers, the bandwidth of frequencies
to be amplified is usually only a
small percentage of the center fre-
quency. Tuned amplifiers are used
in these applications to select the
Figure 48. Basic complementary symmetry
circuit. desired bandwidth of frequencies and
to suppress unwanted frequencies.
and 48, essentially no de current The selectivity of the amplifier is
flows through the load resistor RL. obtained by means of tuned inter-
Therefore, the voice coil of a loud- stage coupling networks.
speaker can be connected directly in The properties of tuned amplifiers
place of RLwithout excessive speaker depend upon the characteristics of
cone distortion. resonant circuits. A simple parallel
A phase inverter is a type of class resonant circuit (sometimes called a
A amplifier used when two out-of- "tank" because it stores energy) is
phase outputs are required. In the shown in Fig. 50. For practical pur-
split-load phase-inverter stage shown poses, the resonant frequency of such
in Fig. 49, the output current of a circuit may be considered inde-
transistor Q, flows through both the pendent of the resistance R, provided
collector load resistor R4 and the R is small compared to the inductive
emitter load resistor Rs. When the reactance XL. The resonant fre-
input signal is negative, the in- quency fr is then given by
creased output current causes the 1
collector side of resistor R, to be-
come more positive and the emitter = zic,717c
Transistor Applications 31
For any given resonant frequency, allel with a capacitance C., as shown
the product of L and C is a constant; in Fig. 51. Similarly, the input im-
at low frequencies LC is large; at pedance can be considered as consist-
high frequencies it is small. ing of a resistance RI in parallel
with a capacitance C.. Because the
tuned circuit is shunted by both the
output impedance of the preceding
transistor and the input impedance
of the following transistor, the ef-
fective selectivity of the circuit is
lc the loaded Q (or QL) based upon
the total impedance of the coupled
1 network, as follows:
OUTPUT OF INPUT OF
PRECEDING COUPLING FOLLOWING
TRANSISTOR NETWORK TRANSISTOR
00
I 3
2
00
4
'Í
R
Figure 51. Equivalent output and input circuits of transistors
connected by a coupling network.
32 RCA Transistor Manual
Pf = f,/Q L
The inherent internal feedback in'
transistors can cause instability and
oscillation as the gain of an amplifier
NI N2 stage is increased (i.e., as the load
and source impedances are increased
Figure 52. Equivalent circuit for transformer-
coupling network having tuned primary from zero to matched conditions).
winding. At low frequencies, therefore, where
the potential gain of transistors is
ri = Ri (Ni/N2) 2 high, it is often desirable to keep
the transistor load impedance low.
where Ni/N2 represents the electrical
Relatively high capacitance values in
turns ratio between the primary
the tuned collector circuit can then
winding and the secondary winding
be avoided by use of a tap on the
of T. If there is capacitance in the
primary winding of the coupling
secondary circuit (C.), it is reflected
transformer, as shown in Fig. 54. At
to the primary circuit as a capaci-
tance C.., and is given by
OUTPUT
TO AUDIO
AMPLIFIER
for the 455-kilocycle signal from the voltage is fed back to the emitter of
input tuned circuit to the emitter. the transistor through the resistor
Resistor R«, which is bypassed for R, to provide automatic gain control.
455 kilocycles by capacitor C,, is Resistor R, and capacitor C« form
the emitter de stabilizing resistor. an audio decoupling network to pre-
The amplified signal from the tran- vent audio feedback to the base of
sistor is developed across the par- the transistor.
allel resonant circuit (tuned to 455 Automatic gain control (age) is
kilocycles) formed by capacitor C« often used in rf and if amplifiers in
and the primary winding of trans- AM radio and television receivers to
former T«, and is coupled by T« to provide lower gain for strong sig-
the crystal-diode second detector CR. nals and higher gain for weak sig-
Voltage at the intermediate fre- nals. The de component of the
quency is taken from the secondary second-detector output, which is di-
winding of the single-tuned output rectly proportional to the strength
circuit and applied to the base of of the signal carrier received, can
the transistor through the feedback be used to vary either the de emitter
(neutralizing) capacitor C«. Because current or the collector voltage of a
of the phase reversal in the common- transistor to provide age. Fig. 56
emitter configuration, this external shows typical curves of power gain
feedback is out of phase with the
0)25
input from the if amplifier, and can-
cels the in-phase reactive feedback T 20 A
as a function of emitter current for both the resonant circuit in the in-
a 455-kilocycle amplifier using either put of the coupling network and the
common-base or common-emitter resonant circuit in the output are
configuration. tuned to the same resonant fre-
In high-frequency tuned ampli- quency. In "stagger-tuned" net-
fiers, where the input impedance is works, the two resonant circuits are
typically low, mutual inductive coup- tuned to slightly different resonant
ling may be impracticable because frequencies to provide a more rec-
of the small number of turns in the tangular band pass. Double-tuned or
secondary winding. It is extremely stagger-tuned networks may use ca-
difficult in practice to construct a pacitive, inductive, or mutual induct-
fractional part of a turn. In such ance coupling, or any combination of
cases, capacitance coupling may be the three.
used, as shown in Fig. 57. This ar- Cross-modulation is an important
rangement, which is also called consideration in the evaluation of
capacitive division, is similar to transistorized tuner circuits. This
tapping down on a coil near reso- phenomenon, which occurs primarily
nance. Impedance transformation in in nonlinear systems, can be defined
this network is determined by the as the transfer of modulation from
ratio between capacitors Ci and C2. an interfering carrier to the desired
Capacitor C, is normally much carrier. In general, the value of
smaller than C2; thus the capacitive cross-modulation is independent of
reactance X0,is normally much larger both the semiconductor material and
OUTPUT OF I— CI INPUT OF
PRECEDING q.• FOLLOWING
Li
TRANSISTOR C2 TRANSISTOR
than X,. Provided the input resist- the construction of the transistor.
ance of the following transistor is At low frequencies, cross-modulation
much greater than Xch the effective is also independent of the amplitude
turns ratio from the top of the coil of the desired carrier, but varies as
to the input of the following tran- the square of the amplitude of the
sistor is (CI C2)/C,. The total ca- interfering signal.
pacitance Ct across the inductance L In most rf circuits, the undesir-
is given by able effects of cross-modulation can
be minimized by good selectivity in
CI — CiC2 the antenna and rf interstage coils.
C2 + C2 Minimum cross-modulation can best
be achieved by use of the optimum
The resonant frequency fr is then
circuit Q with respect to bandwidth
given by
and tracking considerations, which
1 implies minimum loading of the tank
circuits.
fr = 2z-VL ICt
In rf circuits where selectivity is
Double-tuned interstage coupling limited by the low unloaded Q's of
networks are often used in prefer- the coils being used, improved cross-
ence to single-tuned networks to modulation can be obtained by mis-
provide flatter frequency response matching the antenna circuit (that
within the desired pass band and a is, selecting the antenna primary-
sharper drop in response imme- to-secondary turns ratio such that
diately adjacent to the ends of the the reflected antenna impedance at
pass band. In double-tuned networks, the base of the rf amplifier is very
Transistor Applications 35
OSCILLATION
o o
FEEDBACK
NETWORK
FEEDBACK
POWER
LOAD
POWER
INPUT POWER OUTPUT POWER
INPUT OUTPUT
NETWORK NETWORK
o
Figure 62. Block diagram of transistor oscillator showing division of output power.
Li
TIME
(a) (b)
Figure 63. (a) Simplified transistor LC oscillator and (b) corresponding current waveforms.
Transistor Applications 39
C3
within the dotted lines comprise the one shown in the tuned-base oscil-
transistor amplifier. The collector lator in Fig. 64, except for the loca-
shunt-feed arrangement prevents de tion of the tank circuit. The tuned
current flow through the tickler circuit consists of the primary wind-
(primary) winding of transformer ing of transformer T and the var-
T. Feedback is accomplished by the iable capacitor C.. Regeneration is
mutual inductance between the trans- accomplished by coupling the feed-
former windings. back signal from transformer wind-
The tank circuit consisting of the ing 3-4 to the tickler coil winding
secondary winding of transformer T
and variable capacitor C, is the fre-
quency-determining element of the
oscillator. Variable capacitor C. per-
mits tuning through a range of fre-
quencies. Capacitor C2 couples the
oscillation signal to the base of the
transistor, and also blocks dc. Ca-
pacitor C. bypasses the ac signal
around the emitter resistor R. and
prevents degeneration. The output
signal is coupled from the collector
through coupling capacitor C. to the
load.
A tuned-collector transistor oscil-
lator is shown in Fig. 65. In this
circuit, resistors R. and R. establish
the base bias. Resistor R. is the Figure 65. Tuned-collector oscillator.
40 RCA Transistor Manual
1-2. The secondary winding of the of the transformer primary and the
transformer couples the signal out- added capacitor.
put to the load. The Hartley oscillator shown in
Another form of LC resonant Fig. 67 is similar to the Colpitts
feedback oscillator is the transistor oscillator, except that a split induct-
version of the familiar Colpitts os- ance is used instead of a split ca-
cillator, shown in Fig. 66. Regenera- pacitance to obtain feedback. The
circuit in Fig. 67 is modified for push-
pull operation to provide greater
output. The regenerative signal is
applied between base and emitter of
each transistor by means of the in-
duced voltages in the transformer
windings 1-3 and 4-6. After the
feedback signal is applied to trans-
former winding 1-3, circuit opera-
tion is similar to that of a push-pull
amplifier. Capacitor C. places ter-
minal 2 of the transformer at ac
ground potential through capacitor
C.
C3
SWITCHING
Transistors are often used in
pulse and switching circuits in
radar, television, telemetering, pulse-
Figure 74. Simple switching circuit.
code communication, and computing
equipment. These circuits act as gen- minimum. This value of collector
erators, amplifiers, inverters, fre- voltage is referred to as the satura-
quency dividers, and wave-shapers tion voltage, and is an important
to provide limiting, triggering, gat- characteristic of the transistor. A
ing, and signal-routing functions. transistor operating in the satura-
These applications are normally char- tion region is in the ON (conducting)
acterized by large-signal or nonlinear state. (Both junctions are forward-
operation of the transistor. biased.)
In large-signal operation, the tran- Regions of operation are similar
sistor acts as an overdriven amplifier for all transistor configurations used
which is driven from the cutoff region as switches. When both junctions of
to the saturation region. In the sim- the transistor are reverse-biased
ple transistor-switching circuit shown (cutoff condition), the output current
in Fig. 74, the collector-base junc- is very small and the output voltage
tion is reverse-biased by battery Vco is high. When both junctions are
through resistor R3. Switch Si con- forward-biased (saturation condi-
trols the polarity and amount of base tion), the output current is high and
current from battery V111 or V52. the output voltage is small. For most
When Si is in the OFF position, the practical purposes, the small output
emitter-base junction of the transis- current in the cutoff condition and
tor is reverse-biased by battery VB2 the small output voltage in the sat-
through the current-limiting resistor urated condition may be neglected.
R.. The transistor is then in the OFF
(cutoff) state. (Normal quiescent Switching Times
conditions for a transistor switch in
the cutoff region require that both When switch S, in Fig. 74 is
junctions be reverse-biased.) operated in sequence from OFF to
Transistor Applications 45
ON and then back to OFF, the cur- is measured between the points on
rent pulses shown in Fig. 75 are ob- the leading edge and on the trailing
tained. The rectangular input current edge where the amplitude is 90 per
cent of the maximum value.
The storage time t. is the length
of time that the output current Io re-
Is 0 mains at its maximum value after
INPUT AO-I
INPUT 130--1(
C2
are chosen so that the initial appli- cuits are designed to evaluate input
cation of dc power causes one tran- conditions to provide apredetermined
sistor to be cut off and the other to output, they are primarily used as
be driven into saturation. Because of logic circuits. Logic circuits include
the feedback arrangement, each tran- OR, AND, NOR (NOT-OR), NAND
sistor is held in its original state by (NOT-AND), series (clamping), and
the condition of the other. The appli- shunt or inhibitor circuits.
cation of a positive trigger pulse to An OR gate has more than one in-
the base of the OFF transistor or a put, but only one output. It provides
negative pulse to the base of the ON a prescribed output condition when
transistor switches the conducting one or another prescribed input con-
state of the circuit. The new condi- dition exists. In the simple OR gate
tion is then maintained until a sec- shown in Fig. 78, the high resistance
ond pulse triggers the circuit back to of Ri and R2 isolates one input source
the original condition. from the other. When a negative in-
In Fig. 77, two separate inputs are put pulse is applied at either input
shown. A trigger pulse at input A resistor, a negative output pulse is
will change the state of the circuit. obtained. Application of negative
An input of the same polarity at in- pulses to both inputs results only in
put B or an input of opposite polar- a widening of the output pulse. If a
ity at input A will then return the common-emitter configuration is used
circuit to its original state. (Collector instead of the common-base config-
triggering can be accomplished in a uration, phase inversion of the sig-
similar manner.) The time constants nal results, and the OR gate becomes
of QR., and of Cat, essentially deter- a NOT-OR (NOR) gate.
mine the fall time (from conduction
An AND gate also has more than
to cutoff) of transistors Q, and
one input, but only one output. How-
respectively. The output of the cir-
ever, it provides an output only when
cuit is a unit step voltage when one
all the inputs are applied simultan-
trigger is applied, or a square wave
eously. As in the case of the OR
when continuous pulsing of the input
gate, the use of a common-emitter
is used.
configuration provides phase inver-
sion and provides a NOT-AND
Gating Circuits (NAND) gate. In the simple NAND
gate shown in Fig. 79, forward (sat-
A transistor switching circuit in uration) bias is provided by battery
which the transistor operates as an Vbb. The bias value is chosen so that
RI
trigger a bistable multivibrator. The Provided all transistors are cut off
over-all gating function, which con- (quiescent condition), triggering of
sists of a NAND function and a the bistable multivibrator is accom-
NOR function, is performed by tran- plished when the prescribed input
sistors Q,, Q2, and Q2. Transistor Q, conditions for either of the NAND
is part of the bistable multivibrator. gates are met, i.e., when either tran-
Transistors Q, and Q2 are series- sistors Q, and Qz or transistors Q2
connected and form a NAND gate. and Q2 are triggered into conduction.
MULTIVIBRATOR
î
INPUT
A
02
INPUT
INPUT
THERMAL CONSIDERATIONS
49
50 RCA Transistor Manual
HEAT SINKS
Silicon rectifiers are often mounted
on devices called "heat sinks". A HEAT-SINK COOLING CHART
heat sink generally consists of a rel-
atively large metal plate attached to 40
fraction of the ac input cycle during Figure 85. Typical heat-sink cooling chart.
52 RCA Transistor Manual
2. The desired output current (ex- 4. From Fig. 85, the minimum heat-
pressed in amperes) is divided by sink size for the above conditions is
the number of current paths. The ac- found to be 6 by 6 inches.
tual number of paths depends on the
type of operation intended, and can
be determined from the table below. SERIES AND PARALLEL
ARRANGEMENTS
Type of Number of Series arrangements of silicon rec-
Operation Current Paths tifiers are used when the applied re-
Single-Phase, Full-Wave: verse voltage is expected to be
Center-Tapped 2 greater than the maximum peak re-
Bridge 2 verse voltage rating of a single sili-
con rectifier (or cell). For example,
Three-Phase:
four rectifiers having a maximum
Y 3 reverse voltage rating of 200 volts
Double Y 6
each could be connected in series to
Bridge 3
handle an applied reverse voltage of
Six-Phase Star 6 800 volts.
In a series arrangement, the most
The resulting figure is the average important consideration is that the
forward current of the rectifier. applied voltage be divided equally
3. The average current is then across the individual rectifiers. If the
multiplied by the current-multiply- instantaneous voltage is not uni-
ing factor obtained in Step 1. The formly divided, one of the rectifiers
resulting figure represents the ad- may be subjected to avoltage greater
justed average forward current of than its specified maximum reverse
the rectifier. voltage, and, as a result, may be de-
4. This adjusted current is applied stroyed. Uniform voltage division
to Fig. 85 to determine either the can usually be assured by connection
maximum allowable ambient tem- of either resistors or capacitors in
perature for a given heat-sink size parallel with individual cells. Shunt
or the minimum heat-sink size for a resistors are used in steady-state
given ambient temperature. (Pub- applications, and shunt capacitors in
lished data may also include a chart applications in which transient volt-
similar to Fig. 85 for forced-air-cool- ages are expected. Both resistors and
ing applications.) capacitors should be used if the cir-
The following example illustrates cuit is to be exposed to both de and
the calculation of minimum heat-sink ac components.
size for a three-phase, half-wave (Y) A parallel arrangement of rectifiers
circuit. The conduction angle is 120 can be used when the maximum aver-
degrees, the desired output current age forward current required is
is 90 amperes, and the ambient tem- larger than the maximum current
perature is 90 degrees centigrade. rating of an individual rectifier cell.
1. From Fig. 84, the current-multi- To avoid differences in voltage across
plying factor for a conduction angle the parallel rectifiers, it is desirable
of 120 degrees is 1.18. to 'add either aresistor or an inductor
2. For three-phase half-wave oper- in series with each cell. Balanced
ation, the number of current paths is transformers or separate transformer
3. The average forward current windings can be used for this pur-
through the rectifier, therefore, is 90 pose. Although resistors are con-
divided by 3, or 30 amperes. sidered the simplest method of
3. This average forward current is current division, individual inductors
then multiplied by the current-multi- in series with each cell are more effi-
plying factor (1.18) obtained in Step cient because they do not consume as
1 to provide an adjusted forward much power as the resistor arrange-
current of 35.4 amperes. ment.
Silicon Rectifiers 53
OUTPUT RECTIFIER
VOLTAGE CURRENT
IIV --1.1
N
Figure 86. Single-phase het-wave circutt.
OUTPUT RECTIFIER
VOLTAGE CURRENT
oM
av ;rul*—
has a higher peak-to-average volt- through each rectifier cell. This type
age ratio than the circuit of Fig. 86, of circuit is used in alternator recti-
and about 50 per cent less ripple. fiers in automobiles.
This type of circuit is widely used Fig. 90 shows a three-phase (Y)
in television receivers and large au- full-wave bridge circuit which uses a
dio amplifiers. total of six rectifier cells. In this
The single-phase full-wave bridge arrangement, two half-wave recti-
circuit shown in Fig. 88 uses four rec- fiers are connected in series across
tifiers, and does not require the use each leg of a high-voltage trans-
of a transformer center-tap. It sup- former. This circuit delivers twice as
plies twice as much output voltage much voltage output as the circuit of
as the circuit of Fig. 87 for the same Fig. 89 for the same voltage condi-
Silicon Rectifiers 55
OUTPUT RECTIFIER
VOLTAGE CURRENT
OUTPUT
VOLTAGE
CY-Y-1
RECTIFIER
CURRENT
Figure 89. Three-phase (Y) half-wave circuit.
OUTPUT
VOLTAGE
Cv-ry
Eav
3
RECTIFIER
CURRENT
tions. In addition, this circuit, as tween the output of the rectifier and
well as those shown in Figs. 91 and any capacitor in the filter circuit.
92, has an extremely small percent- Values shown do not take into con-
age of ripple and a very low ratio sideration voltage drops which occur
of peak-to-average voltage. in the power transformer, the silicon
The six-phase "star" circuit shown rectifiers, or the filter components
in Fig. 91, which also uses six recti- under load conditions. When a par-
fier cells, allows the least amount of ticular rectifier type has been selected
the total current (one-sixth) to flow for use in a specific circuit, Table I
through each cell. The three-phase can be used to determine the param-
double-Y and interphase transformer eters and characteristics of the
circuit shown in Fig. 92 uses six circuit.
half-wave rectifiers in parallel. This In Table I, all ratios are shown as
arrangement delivers six current functions of either the average out-
pulses per cycle and twice as much put voltage E. or the average de
output current as the circuit shown output current I.., both of which are
in Fig. 89. expressed as unity for each circuit.
Table I lists voltage and current In practical applications, the magni-
ratios for the circuits shown in Figs. tudes of these average values will,
86 through 92 for an inductive load. of course, vary for the different cir-
These ratios apply for sinusoidal ac cuit configurations.
input voltages. It is generally rec- Filter circuits are generally used
ommended that inductive loads rather to smooth out the ac ripple in the
than resistive loads be used for fil- output of arectifier circuit. A smooth-
tering of rectifier current, except ing filter usually consists of capaci-
for the circuit of Fig. 86. Current tors and iron-core chokes. In any
ratios given for inductive loads apply filter-design problem, the load im-
only when a filter choke is used be- pedance must be considered as an
OUTPUT
VOLTAGE
rry-v-r-r%
o,
14--1
_0
I ni
RECTIFIER
CURRENT
OUTPUT
VOLTAGE
f`CY-Y -Y , e1
0 ,
r.-- -3.1
RECTIFIER
CURRENT
CIRCUIT RATIOS:
Output Voltage Fig. 86 Fig. 87 Fig. 88 Fig. 89 Fig. 90 Fig. 91 Fig. 92
Average Eav Eav Eav Eav Eav Eav Eav
Peak (x Eav) 3.14 1.57 1.57 1.21 1.05 1.05 1.05
Ripple (%) 121 48 48 18.3 4.3 4.3 4.3
Input Voltage (RMS)
Phase (x Eav) . 2.22 1.11* 1.11 0.855° 0.428* 0.74 6 0.855*
Line-to-Line (x Eav) 2.22 2.22 1.11 1.48 0.74 1.48t 1.71 t
Average Output
(Load) Current Jay Jay lay Jay Lay Jay lay
RECTIFIER CELL RATIOS
Forward Current
Average (x lay) 1.00 0.5 0.5 0.333 0.333 0.167 0.167
RMS (x lay) 1.57 0.785 0.785 0.587 0.579 0.409 0.293
Peak (x lay) 3.14 1.57 1.57 1.21 1.05 1.05 0.525
Peak Reverse Voltage
xEav ..... .......... 3.14 3.14 1.57 2.09 1.05 2.09 2.42
xErma .... .......... 1.41 2.82 1.41 2.45 2.45 2.83 2.83
* to center tap f maximum value
• to neutral $ maximum value, no load
Table 1-Voltage and current ratios for rectifier circuits shown in Figs. 86 through 92.
Fig. 86 uses a resistive load, and Figs. 87 through 92 an inductive load.
58 RCA Transistor Manual
0— IRRP— e— rtilnr"— •
- 0 0— •— f150P— •
- 0
CT
RECTIFIER RECTIFIER RECTIFIER
o o
L= FILTER CHOKE C= FILTER CAPACITOR
91HE silicon controlled rectifier cathode, gate, base, and anode. These
I (SCR) is basically a four-layer layers are enclosed in a special
n-p-n-p semiconductor device having metal container which is then her-
three electrodes: a cathode, an metically sealed to maintain an ultra-
anode, and a control electrode called dry atmosphere. This entire unit is
the gate. Like all rectifiers, it con-
ducts current primarily in one di-
rection. However, it differs from CATHODE TERMINAL
conventional rectifiers in that it will
not conduct a substantial amount of
current in the forward direction un-
til the anode voltage exceeds a cer-
tain minimum voltage called the
forward breakover voltage. The value GATE TERMINAL
of this voltage can be varied, or
controlled, by the introduction of an
external signal at the third elec-
trode, or gate, of the silicon con-
trolled rectifier. This unique control
characteristic makes the silicon con-
trolled rectifier a particularly useful N (CATHODE)
switching or power-control-device, tN
P (GATE)
especially in high-power circuits. (BASE)
P (ANODE)
(The generic term thyristor has
recently been adopted as an inter-
PEDESTAL
national standard for semiconductor
devices having control character-
istics similar to those of thyratron
STUD
tubes. The silicon controlled rectifier
belongs in this class, and is, more
specifically, a reverse-blocking triode
type of thyristor. This name will
probably replace the name silicon
controlled rectifier on a gradual ba-
sis.) Figure 94. Construction details of typical
silicon controlled rectifier.
CONSTRUCTION
mounted in a rugged case which
Fig. 94 shows the basic construc- provides protection against severe
tion details of the silicon controlled thermal environmental stresses. The
rectifier. The alternate layers of dif- pedestal below the semiconductor
fused silicon material serve as the layers acts as a heat sink to help
59
60 RCA Transistor Manual
dissipate the heat developed inter- this phenomenon occurs, the rectifier
nally during operation. is considered to be triggered, or in
the "on" condition. The forward cur-
CURRENT-VOLTAGE rent then continues to increase rap-
CHARACTERISTICS idly with slight increases in forward
bias, and the device enters a state of
The voltage-current characteristic high forward conduction.
and circuit symbol of the silicon It can be seen that when the for-
controlled rectifier are shown in Fig.. ward breakover voltage of a silicon
95. Under reverse-bias conditions, the controlled rectifier is exceeded, the
device operates in a manner similar high internal resistance of the device
to that of conventional rectifiers, changes to a very low value. The
and exhibits a slight reverse leak- lower resistance then permits a high
age current which is called the re- current to flow through the device
verse blocking current (Lama). This at very low voltage values (Vr).
current has a small value until the This change in internal resistance
peak reverse voltage (PRV) is ex- makes the silicon controlled rectifier
ceeded, at which point the reverse an ideal device for switching appli-
current increases by several orders cations. When the operating voltage
of magnitude. The value of the peak is below the breakover point, rec-
reverse voltage differs for each in- tifier current is extremely small and
dividual type. the switch is effectively open. When
I
F
once
re0
v i
H oo ii vaoo
.1% V
P
If
L
'FBO ANODE
vFBONI (reP
)
F
R
v
m drep)
(0 (b)
Figure 95. (a) Typical voltage and current characteristic and (b) circuit symbol for silicon
controlled rectifier.
the family of curves shown in Fig. 96. reverse voltage (\rum (non-rep)) is
When the gate current is zero, the the maximum value of negative volt-
forward voltage must reach the VR00 age which may be applied to the
value of the device before breakover anode for not more than five milli-
occurs. As the gate current is in- seconds when the gate is open. The
creased, however, the value of break- maximum peak forward blocking
over voltage becomes less until the voltage (Vraord) is the highest value
curve closely resembles that of a of positive voltage which can be ap-
conventional rectifier. In normal op- plied to the anode when the gate is
eration, silicon controlled rectifiers open. The maximum peak gate volt-
are operated well below the forward age (forward V.Kil or reverse Vx(m)
voltage breakover point, and a gate is the highest value of voltage which
signal of sufficient amplitude is used may be applied between the gate and
to assure triggering of the rectifier the cathode when the anode is open.
to the "on" mode. One of the more critical current
ratings for silicon controlled rec-
tifiers is the maximum peak surge
current (irm (surge) ), which is the
highest permissible non-repetitive
peak current of a forward cycle.
This peak current may be repeated
after sufficient time has elapsed for
the device to return to pre-surge
thermal conditions.
Also important is the maximum
average forward current of the de-
i vice. Silicon controlled rectifiers pres-
194 > 4 3> Iga > rg 1 .0
ently available have forward-current
ratings ranging from less than one
Figure 96. Family of curves with gate cur-
to more than 100 amperes. Pub-
rent at different values. lished data for these devices usually
include temperature-rating charts
After the silicon controlled rec- which indicate the percentage of cur-
tifier is triggered by the gate signal, rent permitted as a function of tem-
the current flow through the device perature.
is independent of gate voltage or TRIGGERING
gate current. It remains in the high- CHARACTERISTICS
conduction state until the primary
or anode current is reduced to a level Fig. 97 shows the gate trigger-
below that required to sustain con- voltage characteristics for silicon
duction. Turnoff of the device can controlled rectifier type 2N681. The
be achieved in minimum time by GATE TRIGGER-VOLTAGE CHARACTERISTICS
trigger signal applied to the gate protect the devices from dc feedback
of the device must not exceed the originating in the load or parallel
maximum ratings of the gate, but conduction circuits. The magnitude
must be sufficiently large to assure of the over-current flow can be lim-
reliable triggering under all con- ited by proper selection of source
ditions. and transformer impedances, as well
The gate voltage of silicon con- as the inductance and reactance, of
trolled rectifiers during "off" periods the de circuit.
must be below the values shown by Because of the fast switching ac-
the lower curve of Fig. 97 to prevent tion and high commutating duty of
random triggering. Because the max- silicon controlled rectifiers, voltage
imum gate voltage for "off" periods transients are more troublesome than
varies with temperature, a suffi- in conventional rectifiers. In many
ciently low value must be used to critical applications, effective pro-
prevent undesired triggering at all tection against voltage transients re-
temperature values encountered in quires the use of silicon controlled
a particular application. rectifiers having extremely high
When anegative voltage is applied voltage ratings or the use of two
to the anode of a silicon controlled or more rectifiers in series (as
rectifier, the positive voltage at the described below). In less critical
gate significantly increases the re- applications, more economical tech-
verse leakage current and, as a niques are available. For example,
result, the power which must be a conventional rectifier can be used
dissipated by the device. This dis- in series with the silicon controlled
sipation may be reduced by means rectifier for protection against high
of a "clamping" circuit in which a voltage surges.
diode and a resistor are connected The effects of voltage transients
between the gate and the anode. This in silicon-controlled-rectifier circuits
arrangement attenuates positive gate can be minimized by reducing the
signals when the anode is negative. rate at which the energy is dissipated
An alternative arrangement is to in the devices. This "slowdown" of
place a conventional rectifier having energy release can be achieved by
a low reverse leakage current in relocation of the switching elements
series with the silicon controlled rec- in the circuit or by a change in the
tifier. A large percentage of the sequence of switching. Other pre-
negative voltage is then assumed by ventive methods include the change
the diode, and reverse dissipation of speed of current interruption by
in the controlled rectifier is greatly the switching elements, or the use
reduced. of an additional energy source or
dissipation means in the circuit.
OVERLOAD PROTECTION
In any silicon-controlled-rectifier SERIES ARRANGEMENT
circuit, precautions should be taken
to protect the device from over- Two or more silicon controlled rec-
current and over-voltage surge con- tifiers can be used in a series ar-
ditions. Protection against over- rangement when the total forward
current surges can be achieved by (or reverse) voltage is higher than
either preventing or interrupting the the maximum voltage rating for a
current surge, or by limiting the single device. In series arrange-
magnitude of the current flow by ments, precautions must be taken
means of the circuit impedance. For to assure equal division of the ap-
the first approach, circuit fuses or plied voltage among the devices. If
breakers can be used effectively to one rectifier carries a larger share
disconnect the entire circuit from of voltage because of leakage differ-
the power supply or to isolate the ences or other variations between
faulted silicon controlled rectifiers. units, it may inadvertently fire when
In addition, dc fuses can be used to the peak voltage across the string
Silicon Controlled Rectifiers 63
is large, and thus disrupt the entire reverse direction as well as in the
series string. Under steady-state forward direction.
blocking conditions, this problem In series operation, the gate signal
can be minimized by shunting in- for each silicon controlled rectifier
dividual rectifiers with resistors of must be electrically isolated from
the same value to equalize the volt- the gate signals for all other units.
age drop. Small transformers having multiple
Transient effects also present a secondary windings can effectively
problem in series arrangements. Un- provide such isolation for ac and
der high-frequency voltage-transient pulse-type triggering circuits. In ad-
conditions, voltage division across dition, a small resistor or capacitor
the silicon controlled rectifiers be- may be placed in series with each
comes inversely proportional to the gate to prevent controlled rectifiers
junction capacitance of the individual having low-impedance gate charac-
units. In this case, proper voltage teristics from shunting the trigger-
division can be achieved by placing ing signal away from units having
a small capacitor in parallel with higher gate impedance.
each voltage-equalizing resistor, as Although silicon controlled rec-
shown in Fig. 98a. For most appli- tifiers can also be used in parallel
cations, a 0.01- to 0.05-microfarad arrangements, the circuit require-
capacitor should be sufficient. ments in such applications are quite
In extremely critical applications, complicated, and require a discus-
voltage division for a series ar- sion which is too detailed for the
rangement can best be attained by purposes of this manual.
replacing each voltage-equalizing re-
sistor with a silicon voltage-refer-
POWER CONTROL
ence diode, as shown in Fig. 98b.
As mentioned previously, silicon
controlled rectifiers are used in a
large number of commercial and in-
dustrial power-control applications.
Fig. 99a shows a simple power-con-
trol circuit using a controlled recti-
fier; Fig. 99b shows the waveforms
for applied voltage and load current.
In this circuit, the rectifier is con-
(0) nected in series with the load, and
the gate circuit receives its trigger-
ing signal from the pulse generator.
VOLTAGE-REFERENCE The rectifier selected has a voltage
DIODES,
breakover point which is higher than
the value of applied peak ac anode
voltage. As a result, when the gate
circuit is open (i.e., no signal ap-
plied by the pulse generator), the
rectifier is in the "off" condition, and
no current flows through the load
except a slight leakage current.
When a gate signal of sufficient
(b)
amplitude is applied at the beginning
of the positive anode voltage, the
Figure 98. Various methods of proper rectifier is triggered and current
voltage division in series arrangements. flows through the circuit for the re-
mainder of the positive cycle, even
Double-ended diodes should be used when the triggering signal is re-
if the series string is required to moved. The load current ceases only
block appreciable voltage in the when the applied ac signal becomes
64 RCA Transistor Manual
0.8
LOAD 0.7
CURRENT
06
GATE
CURRENT
(b)
I.' 4'
CURRENT RATIOS Se. (Se
0.1 .s.6e
i
In the design of circuits using
I
silicon controlled rectifiers, it is 0 30 60 90 120 150 180
often necessary to determine the spe- CONDUCTION ANGLE (
4)
can be used in a number of ways to that the current can obtain and corre-
calculate desired current values. For sponds to the peak of the sine wave.
example, they can be used to de- For conduction angles greater than
termine the peak or rms current in 90 degrees, I. is equal to I.; for
a silicon controlled rectifier when a conduction angles smaller than 90
certain average current is to be de- degrees, I. is smaller than I..
livered to a load during a specific The general procedure for the use
part of the conduction period. It is of the charts is as follows:
also possible to work backwards and
determine the necessary period of (1) Identify the unknown or de-
conduction if, for example, aspecified sired parameter.
peak-to-average current ratio must (2) Determine the values of the
be maintained in a particular appli- parameters fixed by the cir-
cation. Another use is the calculation cuit specifications.
of the rms current at various conduc- (3) Use the appropriate curve to
tion angles when it is necessary to find the unknown quantity as
determine the power delivered to a afunction of two of the fixed
load, or power losses in transform- parameters.
ers, motors, leads, or bus bars. Al- Example No. 1: In the single-
though the charts are presented in phase half-wave circuit shown in
terms of device current, they are
Fig. 103, a 2N685 silicon controlled
equally useful for the calculation of rectifier is used to control power
load current and voltage ratios.
from a sinusoidal ac source of 120
0.6 volts rms (170 volts peak) into a
2.8-ohm load. This application re-
quires a load current which can be
0.5
varied from 2 to 25 amperes rms. It
is necessary to determine the range
00.4 of conduction angles required to ob-
tain this range of load current.
t 0.3 "1"YPE
cc 2N685
cc
V 02
0.1
Ru2.8
o 30 OHMS
60 90 120 150 leg
CONDUCTION ANGLE (o)
IRO 150 120 90 60 30 o
FIRING ANGLE (
4)
The ratios of Irm./Io for the maxi- Again, the first quantity to be cal-
mum and minimum load-current culated is the reference current. Be-
values are then calculated, as fol- cause the reference current varies
lows: with the load resistance, the maxi-
mum and minimum values are de-
2
= 0.033 termined as follows:
min — 61
25
= 0.41 (L) max = Ve
ri max = 61 (RI.)min
These current-ratio values are then 45
-
672 = 225 amperes
applied to curve $ of Fig. 100, and
the corresponding conduction angles
are determined to be
Vpk
(O.) min = 15 degrees (I.) min =
(RI.) max
(0.) max = 106 degrees
45
Example No. 2: In the single- = = 11.2 amperes
phase full-wave bridge circuit (two
legs controlled) shown in Fig. 104, a
constant average load current of The corresponding ratios of I.../I.
seven amperes is to be maintained are then calculated, as follows:
while the load resistance varies from
0.2 to 4 ohms. In this case, it is 3.5
— 0015
necessary to determine the variation min 225
3.5
= 0.312
TYPE max 11.2
1N11994
Finally, these ratios are applied to
32 VOLTS
curve 2 of Fig. 100 to determine the
rms desired conduction values, as fol-
lows:
45 VOLTS
PEAK
(0.) min = 25 degrees
(0.) max = 165 degrees
TYPE Example No. 3: In the three-phase
2N1043A half-wave circuit shown in Fig. 105,
the firing angle is varied continu-
Z. 0(0 * OÉ9 ously from 30 to 155 degrees. In this
• Io sin 8Of-5.8.5180'1 case, it is necessary to determine
180° the resultant variation in the at-
Ide
Of leo . 1 /2 tainable load power. Reference cur-
rent for this circuit is determined
Irms .Pri
Of as follows:
• (0°.≤ 015901
Vk 85
Moo; sin 8 (90*,e.efS.180 °) 10 = —= 28 amperes
RL 3.0
Figure 104. Single-phase full-wave bridge
circuit using resistive load, and respective Rectifier current ratios are de-
equations for device current. termined from Fig. 102 for the
extremes of the firing range, as
required in the conduction angle. The follows:
average silicon controlled rectifier
current is half the load current, or Or = 30 * ; — 0.49
3.5 amperes. The applicable current
ratios for this circuit are shown in — 0.06
Or = 155%
Fig. 100 (the individual device cur-
rents are half-wave although the
load current is full-wave).
Silicon Controlled Rectifiers 67
2NI845A
Z.I0 sin O (30°≤8_≤180°)
T et+120
Figure 105. Three-phase half-wave circuit using resistive load, and respective equations
for device current.
These ratios, together with the ref- the load is equal to the rms recti-
erence current, are then used to de- fier current multiplied by the square
termine the range of rms current in root of three; as a result, the de-
the rectifiers, as follows: sired power range of the load is as
(Ir..) max = 0.49 x 28 follows:
= 13.7 amperes
(Ir..) min = 0.06 X 28
= 1.7 amperes P (Ir.. -
0) 2 R
P... = 1700 watts
In this circuit, the rms current in P.i. = 26 watts
Tunnel, Varactor,
and Other Diodes
4—ENCAPSULATING
MATERIAL
--/ PELLET-/
The pellet (approximately 0.025 inch not conduct current under conditions
square) is then soldered into a low- of reverse bias until the breakdown
68
Tunnel, Varactor, and Other Diodes 69
MILLIAMPERES
\Iv Vigo
BIAS —MILLIVOLTS
voltage is reached; under forward type and p-type regions are shown as
bias they begin to conduct at ap- pure resistances r, and r,. The tran-
proximately 300 millivolts. In tunnel sition region is represented as a
diodes, however, a small reverse bias voltage-sensitive resistance R(v) in
causes the valence electrons of semi- parallel with a voltage-sensitive ca-
conductor atoms near the junction to pacitance C(v) because tunneling is
"tunnel" across the junction from
the p-type region into the n-type
region; as a result, the tunnel diode N I
I
TRANSITION
I P
REGION
is highly conductive for all reverse
biases. Similarly, under conditions of
small forward bias, the electrons in
the n-type region "tunnel" across o--ree
the junction to the p-type region and
the tunnel-diode current rises rapidly Civ)
to a sharp maximum peak L. At in- Figure 108. Equivalent circuit for a tunnel
termediate values of forward bias, diode.
the tunnel diode exhibits a negative-
resistance characteristic and the cur-
rent drops to a deep minimum valley a function of both voltage and junc-
point L. At higher values of forward tion capacitance. This capacitance is
bias, the tunnel diode exhibits the similar to that of a parallel-plate
diode characteristic associated with capacitor having plates separated by
conventional semiconductor current the transition region.
flow. The decreasing current with in- The dashed portion L in Fig. 108
creasing forward bias in the negative- represents an inductance which re-
resistance region of the characteristic sults from the case and mounting of
provides the tunnel diode with its the tunnel diode. This inductance is
ability to amplify, oscillate, and unimportant for low-frequency di-
switch. odes, but becomes increasingly im-
portant at high frequencies (above
Equivalent Circuit 100 megacycles).
In the equivalent circuit for a tun- Fig. 109 shows the form of the
nel diode shown in Fig. 108, the n- equivalent circuit when the diode is
70 RCA Transistor Manual
HIGH-CURRENT
TUNNEL DIODES
----CONVENTIONAL
RECTIFIER
«mews TUNNEL
RECTIFIER
I VOLTAGE
COMPENSATING DIODES
Figure 117. Varactor-diode frequency
multiplier. Excellent stabilization of collector
current for variations in both supply
a fundamental frequency f and an voltage and temperature can be ob-
internal impedance Z.. Because the tained by the use of a compensating
ideal input filter is an open circuit diode operating in the forward di-
for all frequencies except the funda- rection in the bias network of ampli-
mental frequency, only the funda- fier or oscillator circuits. Fig. 118
mental component of current if can shows the transfer characteristics of
flow in the input loop. A second-
harmonic current i,f is generated by 50
the varactor diode and flows toward
the load Zo another ideal filter is
used in the output loop to block the )
fundamental-frequency component of 0 Ir) 0
the input current. Cll
,
i
ent of temperature.
i
The use of a compensating diode
20
also reduces the variation in tran-
sistor idling current as a result of
10 supply-voltage variations. Because
the diode current changes in propor-
tion with the supply voltage, the bias
0 50 100 150 200 250 voltage to the transistor changes in
FORWARD DIODE MILLIVOLTS the same proportion and idling-cur-
rent changes are minimized. (The
Figure 119. Forward characteristics of
compensating diode. use of diode compensation is dis-
cussed in more detail under "Biasing"
diode current at this point deter- in the Transistor Applications Sec-
mines a bias voltage which estab- tion.)
Transistor Installation
76
Transistor Installation 77
THE technical data for RCA tran- Electrode voltage and current rat-
I- sistors given in the following sec- ings for transistors are in general
tion include ratings, characteristics, self-explanatory, but abrief explana-
typical operation values, and char- tion of some ratings will aid in the
acteristic curves. Unless otherwise understanding and interpretation of
specified, all voltages and currents transistor data.
are de values, and all values are ob-
Voltage ratings are established
tained at an ambient temperature of
with reference to a specified elec-
25 degrees centigrade.
trode (e.g., collector-to-emitter volt-
Ratings are established for semi- age), and indicate the maximum
conductor devices to help equipment potential which can be placed across
designers utilize the performance the two given electrodes before crys-
and service capabilities of each type tal breakdown occurs. These ratings
to the best advantage. These ratings may be specified with the third elec-
are based on careful study and ex- trode open, or with specific bias volt-
tensive testing, and indicate limits ages or external resistances.
within which the specified character-
Transistor dissipation is the power
istics must be maintained to ensure
dissipated in the form of heat by the
satisfactory performance. The maxi-
collector. It is the difference between
mum ratings given for the semi-
the power supplied to the collector
conductor devices included in this
and the power delivered by the tran-
Manual are based on the Absolute sistor to the load. Because of the
Maximum system. This system has sensitivity of semiconductor mate-
been defined by the Joint Electron De-
rials to variations in thermal condi-
vice Engineering Council (JEDEC)
tions, maximum dissipation ratings
and standardized by the National
are usually given for specific tem-
Electrical Manufacturers Association
perature conditions.
(NEMA) and the Electronic Indus-
tries Association (EIA). For many types, the maximum
value of transistor dissipation is spec-
Absolute-maximum ratings are ified for ambient, case, or mounting-
limiting values of operating and en- flange temperatures up to 25 degrees
vironmental conditions which should centigrade, and must be reduced
not be exceeded by any device of a linearly for higher temperatures. For
specified type under any condition of such types, Fig. 122 can be used to
operation. Effective use of these determine maximum permissible dis-
ratings requires close control of sipation values at particular tem-
supply-voltage variations, component perature conditions above 25 degrees
variations, equipment-control adjust- centigrade. (This figure cannot be
ment, load variations, signal varia- assumed to apply to types other than
tions, and environmental conditions. those for which it is specified in the
79
80 RCA Transistor Manual
loo
80
om ü
Op
an 60 ee
—2—
cox
< ete.
tu
m0
•(./..
c7) 1... 40 're .e0
>la
e , ) o.o
a
u!re
ui
6*
a.
20
o N N NN
o
25 50 75 100 125 150 175 200
TEMPERATURE--- *C
data section.) The curves show the for the transistor at the given tem-
permissible percentage of the maxi- perature.
mum dissipation ratings as a func- The following example illustrates
tion of ambient or case temperature. the calculation of the maximum per-
Individual curves are plotted for missible dissipation for transistor
maximum operating temperatures of type 2N1490 at a case temperature
50, 71, 85, 100, 175, and 200 degrees of 100 degrees centigrade. This type
centigrade. If the maximum operat- has a maximum dissipation rating of
ing temperature of a desired tran- 75 watts at a case temperature of 25
sistor type is some other value, a degrees centigrade, and a maximum
new curve can be drawn from point permissible case-temperature rating
A in the figure to the desired maxi- of 200 degrees centigrade.
mum temperature value on the 1. A perpendicular line is drawn
abscissa. from the 100-degree point on the
To use the chart, it is necessary to abscissa to the 200-degree curve.
know the maximum dissipation rat- 2. The projection of this point to
ing and the maximum operating tem- the ordinate indicates a percentage
perature for a given transistor. The of 57.5.
calculation then involves only two Therefore, the maximum permis-
steps: sible dissipation for the 2N1490 at
a case temperature of 100 degrees
1. A vertical line is drawn at the centigrade is 0.575 times 75, or ap-
desired operating temperature value
proximately 43 watts.
on the abscissa to intersect the curve Semiconductor devices require
representing the maximum operating close control of thermal variations
temperature specified for the tran- not only during operation, but also
sistor. during storage. For this reason, the
2. A horizontal line drawn from maximum ratings for transistors
this intersection point to the ordi- usually include a maximum permis-
nate establishes the permissible per- sible storage temperature, as well as
centage of the maximum dissipation a maximum operating temperature.
Interpretation Of Data 81
TRANSISTORS
82
Selection Charts 83
RECTIFIERS
MAX. PEAK MAX. AMBIENT MAX. PEAK MAX. AMBIENT
REVERSE TEMPERATURE REVERSE TEMPERATURE
TYPE VOLTS (Operating — °C) TYPE VOLTS (Operating — *C)
RECTIFIERS (cont'd)
MAX. PEAK MAX. AMBIENT MAX. PEAK MAX. AMBIENT
REVERSE TEMPERATURE REVERSE TEMPERATURE
TYPE VOLTS (Operating—`t) TYPE VOLTS (Operating—°C)
SILICON RECTIFIER
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive lead
CHARACTERISTICS
Maximum Reverse Current:
Dynamics 3.8 ma
•Average value for one complete cycle at maximum peak reverse voltage, maximum
average forward current, and case temperature = 150 *C.
81
88 RCA Transistor Manual
SILICON RECTIFIER
These types are reverse-polarity riTK
1N248RA versions of types 1N248A, 1N248B,
1N248RB and 1N248C, respectively. Types
1N248RA and 1N248RB are discon-
1N248RC tinued types listed for reference only.
JEDEC No. DO-5 package; outline
3, Outlines Section.
SILICON RECTIFIER
Hermetically sealed 20-ampere
1N249A types used in generator-type power
supplies in mobile equipment; dc-to-
1N249B dc converters and battery chargers;
1N249C power supplies for aircraft, marine,
and missile equipment; transmitters,
rf generators, and dc-motor supplies; machine-tool controls; welding and elec-
troplating equipment; dc-blocking service; magnetic amplifiers; and a wide
variety of other heavy-duty applications. These types are designed to meet
stringent environmental and mechanical specifications. The special copper-alloy
mounting stud can withstand an installing torque up to 50 inch-pounds. JEDEC
No. DO-5 package; outline 3, Outlines Section. Types 1N249A and 1N249B are
discontinued types listed for reference only; they are similar to type 1N249C
except for some slightly lower ratings, and can be directly replaced by type
1N249C. Type 1N249C is identical with type 1N1198A except for the following
items:
MAXIMUM RATINGS
For power-supply frequency of 60 cps,. single-
phase operation, with resistive or inductive load
fie max volts
Peak Reverse Voltage 77 max volts
RMS Supply Voltage 100 max volts
DC Blocking Voltage
CHARACTERISTICS
Maxitun Reverse Current: 3.6 ma
Dynamic*
•Average value for one complete cycle at maximum peak reverse voltage, maximum
average forward current, and case temperature = 150•C.
SILICON RECTIFIER
These types are reverse-polarity
1N249RA versions of types 1N249A, 1N249B,
and 1N249C, respectively. Types
1N249RB 1N249RA and 1N249RB are discon-
1N249RC tinued types listed for reference only.
JEDEC No. DO-5 package; outline C f)
3, Outlines Section.
SILICON RECTIFIER
Hermetically sealed 20-ampere
1N250A supplies in mobile equipment; dc-to-
types used in generator-type power
1N250B dc converters and battery chargers;
1N250C power supplies for aircraft, marine,
and missile equipment; transmitters,
rf generators, and dc-motor power supplies; machine-tool controls; welding an'
Technical Data 89
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive toad
CHARACTERISTICS
Maximum Reverse Current:
Dynamic* 3.4 Ma
•Average value for one complete cycle at maximum peak reverse voltage, maximum
average forward current, and case temperature = 150°C.
SILICON RECTIFIER
These types are reverse-polarity
versions of types 1N250A, 1N250B,
1N250RA
and 1N250C, respectively. Types 1N25ORB
1N250RA and 1N25ORB are discon-
tinued types listed for reference only. 1N25ORC
JEDEC No. DO-5 package; outline
3, Outlines Section.
SILICON RECTIFIER
Hermetically sealed 750-milli-
ampere type for use at peak reverse
voltages up to 100 volts. It is used in 1N440B
magnetic amplifiers, dc-blocking cir-
cuits, power supplies, and other rec-
tifying applications. This type is
designed to meet stringent environmental and mechanical tests. JEDEC No.
DO-1 package; outline 1, Outlines Section. This type is identical with type
1N443B except for the following items:
MAXIMUM RATINGS
For power-supply frequency of 60 cps, sin gle-
phase operation, with resistive or inductive load
Peak Reverse Voltage 100 max volts
RMS Supply Voltage 70 max volts
DC Blocking Voltage 100 max volts
CHARACTERISTICS
Maximum Reverse Current:
Dynamic* 100 Ma
Static; 0.3 Ma
•Average value for one complete cycle at maximum peak reverse voltage, maximum
average forward current, and ambient temperature = 150°C.
tDC value at maximum peak reverse voltage, average forward current = 0, and ambient
temperature = 25°C.
90 RCA Transistor Manual
SILICON RECTIFIER
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive load
CHARACTERISTICS
Maximum Reverse Current:
Dynamic* 100 pa
Statict 0.75 pa
•Average value for one complete cycle at maximum peak reverse voltage, maximum
average forward current, and ambient temperature = 1sec.
tDC value at maximum peak reverse voltage, average forward current = 0, and ambient
temperature = 25°C.
SILICON RECTIFIER +
Hermetically sealed 750-milli-
ampere type for use at peak reverse
1N442B voltages up to 300 volts. It is used in
magnetic amplifiers, dc-blocking cir-
cuits, power supplies, and other rec- g
tifying applications. This type is
designed to meet stringent environmental and mechanical tests. JEDEC No.
DO-1 package; outline 1, Outlines Section. This type is identical with type
1N443B except for the following items:
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive load
CHARACTERISTICS
Maximum Reverse Current:
Dynamic* 200
Statict 1 pa
•Average value for one complete cycle at maximum peak reverse voltage, maximum
average forward current, and ambient temperature = 150°C.
tDC value at maximum peak reverse voltage, average forward current = O. and ambient
temperature = 25°C.
Technical Data 91
A SILICON RECTIFIER
Hermetically sealed 750-milli-
ampere type for use at peak reverse
voltages up to 400 volts. It is used in
magnetic amplifiers, dc-blocking cir-
cuits, power supplies, and other rec-
tifying applications. This type is 1N443B
designed to meet stringent environmental and mechanical tests. JEDEC No.
DO-1 package; outline 1, Outlines Section.
MAXIMUM RATINGS
For power-supply frequency of 60 ens, single-
phase operation, with resistive or inductive load
RATING CHART
TYPE 174443B
750
fll
el
t 625
a>
>'«* 500
i
›¡
D 375
'e 250
in 125
CHARACTERISTICS
Maximum Forward Voltage Drops 1.5 volts
Maximum Reverse current:
Dynamics 200 ga
Statict 1.5 ga
SILICON RECTIFIER
Hermetically sealed 750-milli-
ampere type for use at peak reverse
voltages up to 500 volts. It is used in 1N444B
magnetic amplifiers, dc-blocking cir-
cuits, power supplies, and other rec-
tifying applications. This type is
designed to meet stringent environmental and mechanical tests. JEDEC No.
DO-1 package; outline 1, Outlines Section.
92 RCA Transistor Manual
MAXIMUM RATINGS
RATING CHART
TYPE IN4448
.750
Lie
ow 625
ac1-
cr 2
wEX.
>, 500
M 2 375
•«* 250
Mec
o
u.
125
CHARACTERISTICS
Maximum Forward Voltage Drop* 1.5volts
Maximum Reverse Current:
Dynamic 200
Statict 1.75 aa
•DC value at full-load average current and ambient temperature = 25°C.
tAverage value for one complete cycle at maximum peak reverse voltage, maximum
average forward current, and ambient temperature = 150°C.
tDC value at maximum peak reverse voltage, average forward current = 0, and ambient
temperature = 25°C.
MAXIMUM RATINGS
For power-supply frequency of 60 ells, single-
phase operation, with resistive or inductive Wad
RATING CHART
TYPE IN44513
.750
sae
o625
.
eta-
erM
urx
>3500
Mi
275
250
ne
o
125
CHARACTERISTICS
Maximum Forward Voltage Drop* 1.5 volts
Maximum Reverse Current:
Dynamics 200 aa
Statict 2 sia
1 5 SILICON RECTIFIER
Hermetically sealed 750- m illi-
ampere type for use at peak rev erse
voltages up to 50 volts. It is used in 1N536
magnetic amplifiers, dc-blocking cir-
cuits, power supplies, and other rec-
tifying applications. This type is
iesigned to meet stringent environmental and mechanical tests. JEDEC No.
DO-1 package; outline 1, Outlines Section. This type is identical with type
-IN547 except for the following items:
fflIAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive toad
- .:HARACTERISTICS
SILICON RECTIFIER
Hermetically sealed 750-milli-
ampere type for use at peak reverse
1N537 voltages up to 100 volts. It is used in
magnetic amplifiers, dc-blocking cir-
cuits, power supplies, and other rec-
tifying applications. This type is
designed to meet stringent environmental and mechanical tests. JEDEC No.
DO-1 package; outline 1, Outlines Section. This type is identical with type
1N547 except for the following items:
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive load
CHARACTERISTICS
Maximum Forward Voltage Drop* 1.1 volts
Maximum Reverse Current:
Dynamict 0.4 ma
SILICON RECTIFIER f )
c_
MAXIMUM RATINGS
For power-supply frequency of 60 ePs, single-
phase operation, with resistive or inductive load
CHARACTERISTICS
Maximum Forward Voltage Drop* 1.1 volts_
Maximum Reverse Current:
Dynamict 0.3 Inik
SILICON RECTIFIER q
s )
DO-1 package; outline 1, Outlines Section. This type is identical with type
1N547 except for the following items:
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive Wad
CHARACTERISTICS
Maximum Forward Voltage Drop* 1.1 volts
Maximum Reverse Current:
Dynamic: 0.3 ma
SILICON RECTIFIER
Hermetically sealed 750-milli-
ampere type for use at peak reverse
voltages up to 400 volts. It is used in
magnetic amplifiers, dc-blocking cir- 1N540
cuits, power supplies, and other rec-
K tifying applications. This type is
designed to meet stringent environmental and mechanical tests. JEDEC No.
DO-1 package; outline 1, Outlines Section. This type is identical with type
1N547 except for the following items:
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive load
Peak Reverse Voltage 400 max volts
RMS Supply Voltage 280 max volts
DC Blocking Voltage 400 max volts
CHARACTERISTICS
Maximum Forward Voltage Drie s 1.1 volts
Maximum Reverse Current:
Dynamici 0.3 ma
4 ) SlLICON RECTIFIER
He rmetically sealed 750-milli-
ampere type for use at peak reverse
magnetic
voltages up
amplifiers,
to 600 volts.
dc-blocking
It is used
cir-
in 1N547
cuits, power supplies, and other rec-
tifying applications. This type is
designed to meet stringent environmental and mechanical tests. JEDEC No.
DO-1 package; outline 1, Outlines Section.
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive Wad
Peak Reverse Voltage 600 max volts
RMS Supply Voltage 420 max volts
96 RCA Transistor Manual
RATING CHART
TYPE 1N547'
750
•40. 625
EJ
3 sco
e!
375
leo250
u.
125
CHARACTERISTICS
Maximum Forward Voltage Drop' 1.2 volts
Maximum Reverse Current:
Dynamics 0.35 ma
Statict 5 pa
•DC value at average forward ma = 500 and ambient temperature = 25°C.
;Average value for one complete cycle at maximum peak reverse voltage, maximum
average forward current, and ambient temperature = 150°C.
tDC value at maximum peak reverse voltage, average forward current = 0, and ambient
temperature = 25°C.
SILICON RECTIFIER
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive load
CHARACTERISTICS
Maximum Reverse Current:
Dynamic' 0.3 ma
•Average value for one complete cycle at maximum peak reverse voltage, maximum
average forward current, and ambient temperature = 150°C.
Technical Data 97
SILICON RECTIFIER
Hermetically sealed 40-ampere
type for use at peak reverse voltages
up to 50 volts. It is used in genera- 1N1183A
tor-type power supplies in mobile
equipment; dc-to-dc converters and
battery chargers; power supplies for
aircraft, marine and missile equipment; transmitters, rf generators, and dc-
motor power supplies; machine-tool controls; welding and electroplating equip-
ment; dc-blocking service; magnetic amplifiers; and a wide variety of other
heavy-duty equipment. This type is designed to meet stringent environmental
and mechanical specifications. The special copper-alloy mounting stud can
withstand an installing torque up to 50 inch-pounds. JEDEC No. DO-5 pack-
age; outline 3, Outlines Section. This type is identical with type 1N1186A ex-
cept for the following items:
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive load
SILICON RECTIFIER
This type is a reverse-polarity
version of type 1N1183A. JEDEC No.
DO-5 package; outline 3, Outlines 1N1183RA
Section.
SILICON RECTIFIER
Hermetically sealed 40-ampere
type for use at peak reverse voltages
up to 100 volts. It is used in genera- 1N1184A
tor-type power supplies in mo bil e
equipment; dc-to-dc converters and
battery chargers; power supplies for
aircraft, marine, and missile equipment; transmitters, rf generators, and dc-
motor power supplies; machine-tool controls; welding and electroplating equip-
ment; dc-blocking service; magnetic amplifiers; and a wide variety of other
heavy-duty equipment. This type is designed to meet stringent environmental
and mechanical specifications. The special copper-alloy mounting stud can
withstand an installing torque up to 50 inch-pounds. JEDEC No. DO-5 pack-
age; outline 3, Outlines Section. This type is identical with type 1N1186A ex-
cept for the following items:
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive Load
Peak Reverse Voltage
RMS Supply Voltage 100 max volts
DC Blocking Voltage 70 max volts
100 max volts
SILICON RECTIFIER
This type is a reverse-polarity
version of type 1N1184A. JEDEC No.
DO-5 package; outline 3. Outlines
1N1184RA
Section.
98 RCA Transistor Manual
SILICON RECTIFIER
Hermetically sealed 40-ampere
type for use at peak reverse voltages
up to 200 volts. It is used in genera-
1N1186A tor-type power supplies in mobile
equipment; dc-to-dc converters and
battery chargers; power supplies for
aircraft, marine, and missile equipment; transmitters, rf generators, and de-
motor power supplies; machine-tool controls; welding and electroplating equip-
ment; dc-blocking service; magnetic amplifiers; and a wide variety of other
heavy-duty applications. This type is designed to meet stringent environmental
and mechanical specifications. The special copper-alloy mounting stud can
withstand an installing torque up to 50 inch-pounds. JEDEC No. DO-5 pack-
age; outline 3, Outlines Section.
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive Load
Peak Reverse Voltage 200 max volts
RMS Supply Voltage 140 max volts
DC Blocking Voltage 200 max volts
Average Forward Current:
At case temperature of 15ec 40 max amperes
At other case temperatures See Rating Chart I
Peak Recurrent Current 195 max amperes
Surge Current:•
For one-half cycle, sine wave 800 max amperes
For one or more cycles See Rating Chart II
Case-Temperature Range:
Operating and storage —65 to 200
RATING CHART I.
HEAT-SINK COOLING CHART TYPE IN I186A I ' '
LOAD: RESISTIVE OR INDUCTIVE
CURVE 1TYPE OF OPERATION
40 A DIRECT CURRENT
13 SINGLE PHASE
C THREE PHASE
D SIX PHASE
35
o
w 30
cc
a.
2
4
î 25
W
o 160 170 180 190 200
us. CASE TEMPERATURE-•C
20
RATING CHART IL
ir TYPE INI186A
> -NATURAL COOLING
4 SINGLE-PHASE OPERAT ON
1 II
RECTIFIER TYPE IS STUD- TYPE INI186A
= 15 - MOUNTED DIRECTLY ON V->
SUPPLY FREQUENCY. 60 CPS SINE WAVE.
HEAT SINK. LOAD: RESISTIVE OR INDUCTIVE
a
HEAT SINK: I/16•-THICK COPPER
- WITH A MAT BLACK SURFACE eBoo RMS SUPPLY VOLTAGE •MAXIMUM-
RATED VALUE
-
AND THERMAL EMISSIVITY OF ve
AVERAGE FORWARD CURRENT MAXI-
10 - MUM RATED VALUE
a 600
a CASE TEMPERATURE •I50 •C
5 le 400
a
200
O
0 50 100 150 200
AMBIENT TEMPERATURE --, C
92C14-113481 O
2 4 6010 2 4 6 8100
SURGE - CURRENT DURATION- CYCLES
9222-03302
Technical Data 99
CHARACTERISTICS
Maximum Forward Voltage Drops 0.65 volt
Maximum Reverse Current:
Dynamics 2.5 ma
Statict 0.015 ma
Maximum Thermal Resistance:
Junction-to-case 1 °C/watt
•Superimposed on device operating within maximum voltage, current, and temperature
ratings; may be repeated after sufficient time has elapsed for the device to return to
the presurge thermal-equilibrium conditions.
Average value over one complete cycle at maximum peak reverse voltage, maximum
average forward amperes, and case temperature = 150°C.
tAC value at maximum peak reverse voltage, average forward current = 0, and case
temperature = 25°C.
SILICON RECTIFIER
This type is a reverse-polarity
version of type 1N118SA. JEDEC No. 1N1186RA
DO-5 package; outline 3, Outlines
Section.
SILICON RECTIFIER
ciA Hermetically sealed types for
use at peak reverse voltages up
to 300 volts. They are used i n 1N1187
1N1187 1N1187A
Peak Reverse Voltage 300 300 max volts
RMS Supply Voltage 212 212 max volts
DC Blocking Voltage 240 300 max volts
CHARACTERISTICS
Maximum Reverse Current:
Dynamic* 2.5 ma
•Average value for one complete cycle at maximum peak reverse voltage, maximum
forward amperes, and case temperature = 150°C.
SILICON RECTIFIER
These types are reverse-polarity
versions of types 1N1187 and
1N1187A. Type 1N1187R is a discon- 1N1187R
tinued type listed for reference only. ivv
Ny -17., A
JEDEC No. DO-5 package; outline I I bv,M
3, Outlines Section.
100 RCA Transistor Manual
SILICON RECTIFIER
Hermetically sealed types for use
at peak reverse voltages up to 400
1N1188 volts. They are used in generator-
.' Nii88A type power supplies in mobile
•-• equipment; dc-to-dc converters and
battery chargers; power supplies for
aircraft, marine, and missile equipment; transmitters, rf generators, and dc-
motor power supplies; machine-tool controls; welding and electroplating equip-
ment; dc-blocking service; magnetic amplifiers; and a wide variety of other
heavy-duty applications. These types are designed to meet stringent environ-
mental and mechanical specifications. The special copper-alloy mounting stud
can withstand an installing torque up to 50 inch-pounds. JEDEC No. DO-5
package; outline 3, Outlines Section. Type 1N1188 is a discontinued type listed
for reference only. These types are identical with types 1N1190 and 1N1190A,
respectively, except for the following items:
MAXIMUM RATINGS
For power-supply .frequency of 60 cps, single-
phase operation, unth resistive or inductive Load
1N1188 1N1188A
Peak Reverse Voltage 400 400 max volts
RMS Supply Voltage 284 284 max volts
DC Blocking Voltage 320 400 max volts
CHARACTER I
STI CS
Maximum Reverse Current:
Dynamic — 2.2 Ma
•Average value for one complete cycle at maximum peak reverse voltage, maximum
forward amperes, and case temperature = 150°C.
SILICON RECTIFIER
These types are reverse-polarity
versions of types 1N1188 and
1N1188R 1N1188A. Type 1N1188R is a discon-
tinued type listed for reference only.
1N1188RA JEDEC No. DO-5 package; outline
3, Outlines Section.
SILICON RECTIFIER
Hermetically sealed types for use
at peak reverse voltages up to 500
1N1189 volts. They are used in generator-
1 N1189A type power supplies in mobile
equipment; dc-to-dc converters and
battery chargers; power supplies for
aircraft, marine, and missile equipment; transmitters, rf generators, and dc-
motor power supplies; machine-tool controls; welding and electroplatmg equip-
ment; dc-blocking service; magnetic amplifiers; and a wide variety of other
heavy-duty applications. These types are designed to meet stringent environ-
mental and mechanical specifications. The special copper-alloy mounting stud
can withstand an installing torque up to 50 inch-pounds. JEDEC No. DO-5
package; outline 3, Outlines Section. Type 1N1189 is a discontinued type listed
for reference only. These types are identical with types 1N1190 and 1N1190A,
respectively, except for the following items:
Technical Data 101
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive load
1N1189 1N1189A
Peak Reverse Voltage 500 500 max volts
RMS Supply Voltage 355 355 max volts
DC Blocking Voltage 400 500 max volts
CHARACTERISTICS
Maximum Reverse Current:
Dynamic* — 2 ma
• Average value for one complete cycle at maximum peak reverse voltage, maximum
forward amperes, and case temperature = 150C.
SILICON RECTIFIER
SILICON RECTIFIER
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive load
1N1190 1N1190A
Peak Reverse Voltage 600 600 max volts
RMS Supply Voltage 4:4 424 max volts
DC Blocking Voltage 480 600 max volts
Average Forward Current:
At case temperature of 140 °C 35 40 max amperes
At other case temperatures See Rating Chart I
Peak Recurrent Current 130 195 max amperes
Surge Current: •
For one-half cycle, sine wave 500 800 max amperes
For one or more cycles — See Rating Chart II
Case-Temperature Range:
Operating and Storage —65 to 175 —65 to 200 °C
92CS-11342TI
0 20 e«.
... : e
e ,.,,.
RATING CHART a P.
TYPE 1N1190A 15
SUPPLY FREQUENCY •60 CPS SINE WAVE
CASE TEMPERATURE •150* C
800 LOAD: RESISTIVE OR INDUCTIVE - i
›‘
to
RMS SUPPLY VOLTAGE •MAXIMUM-RATED
cc -1 VALUE -
DP_ 10
AVERAGE FORWARD CURRENT. MAXIMUM-
«i6 600 RATED VALUE -
x rr
ta,
a.
2400 N ......\-_____......... 5
\
Fe%
a 200
CHARACTERISTICS
Maximum Forward Voltage Drop" 1.7 0.65 volts
Maximum Reverse Current:
Dynamict 10 1.8 ma
Stahel 0.025 0.015 ma
Maximum Thermal Resistance:
Junction-to-case 1 1 °C/watt
SILICON RECTIFIER
These types are reverse-polarity
versions of types 1N1190 and
1N1190R 1N1190A. Type 1N119OR is a discon-
SILICON RECTIFIER
'FA Hermetically sealed types used
in generator-type power supplies in
mobile equipment; dc-to-dc con- 1N1195
verters and battery chargers; power 1N1195A
supplies for aircraft, marine, and
IC missile equipment; transmitters, rf
generators, and de-motor power supplies; machine-tool controls; welding and
electroplating equipment; dc-blocking service; magnetic amplifiers; and a wide
variety of other heavy-duty applications. These types are designed to meet
stringent environmental and mechanical specifications. The special copper-alloy
mounting stud can withstand an installing torque up to 50 inch-pounds. JEDEC
No. DO-5 package; outline 3, Outlines Section. Type 1N1195 is a discontinued
type listed for reference only; it is similar to type 1N1195A except for some
slightly lower ratings, and can be directly replaced by type 1N1195A. Type
1N1195A is identical with type 1N1198A except for the following items:
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive load
CHARACTERISTICS
Maximum Reverse Current:
Dynamics 3.2 ma
•Average value for one complete cycle at maximum peak reverse voltage, maximum
average forward amperes, and case temperature = 150°C.
SILICON RECTIFIER
( f ) These types are reverse-polarity
versions of types 1N1195 and
1N1195A, respectively. Type 1N1195R 1N1 195R
is a discontinued type listed for ref-
erence only. JEDEC No. DO-5 pack- 1N1195RA
A age; outline 3, Outlines Section.
SILICON RECTIFIER
Hermetically sealed types used
in generator-type power supplies in
mobile equipment; de-to-dc con- 1N1196
verters and battery chargers; power 1N1196A
supplies for aircraft, marine, and
missile equipment; transmitters, rf
generators, and dc-motor power supplies; machine-tool controls; welding and
electroplating equipment; dc-blocking service; magnetic amplifiers, and a wide
variety of other heavy-duty applications. These types are designed to meet
stringent environmental and mechanical specifications. The special copper-alloy
mounting stud can withstand an installing torque up to 50 inch-pounds. JEDEC
No. DO-5 package; outline 3, Outlines Section. Type 1N1196 is a discontinued
type listed for reference only; it is similar to type 1N1196A except for some
slightly lower ratings, and can be directly replaced by type 1N1196A. Type
1N1196A is identical with type 1N1198A except for the following items:
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive load
CHARACTERISTICS
Maximum Reverse Current:
Dynamic' 2.5 ma
•Average value for one complete cycle at maximum peak reverse voltage, maximum
average forward amperes, and case temperature = 150°C.
SILICON RECTIFIER
These types are reverse-polarity
versions of types 1N1196 and
1N1 196R 1N1196A, respectively. Type 1N1196R
SILICON RECTIFIER
Hermetically sealed types for use
at peak reverse voltages up to 500
1N1 197 volts. They are used in generator-
.' N1197A type power supplies in mobile
equipment; dc-to-dc converters and
battery chargers; power supplies for
aircraft, marine, and missile equipment; transmitters, rf generators, and dc-
motor supplies; machine-tool controls; welding and electroplating equipment;
dc-blocking service; magnetic amplifiers, and a wide variety of other heavy-
duty applications. These types are designed to meet stringent environmental
and mechanical specifications. The special copper-alloy mounting stud can
withstand an installing torque up to 50 inch-pounds. JEDEC No. DO-5 pack-
age; outline 3, Outlines Section. Type 1N1197 is a discontinued type listed for
reference only; it is similar to type 1N1197A except for some slightly lower
ratings, and can be directly replaced by type 1N1197A. Type 1N1197A is iden-
tical with type 1N1198A except for the following items:
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive load
CHARACTERISTICS
Maximum Reverse Current:
Dynamic* 2.2 ma
•Average value for one complete cycle at maximum peak reverse voltage, maximum
average forward amperes, and case temperature = 150°C.
SILICON RECTIFIER
These types are reverse-polarity
1N1 197R versions of types 1N1197 and
1N1197A, respectively. Type 1N1197R
1N1197RA is a discontinued type listed for ref-
erence only. JEDEC No. DO-5 pack-
age; outline 3, Outlines Section.
Technical Data 105
SILICON RECTIFIER
Hermetically sealed 20-ampere
types for use at peak reverse volt-
ages up to 600 volts. They are used 1N1198
in generator-type power supplies in 1N1 198A
mobile equipment; dc-to-dc con-
verters and battery chargers; power
supplies for aircraft, marine, and missile equipment; transmitters, rf generators,
and de-motor power supplies; machine-tool controls; welding and electroplat-
ing equipment; de-blocking service; magnetic amplifiers, and a wide variety of
other heavy-duty applications. These types are designed to meet stringent en-
vironmental and mechanical specifications. The special copper-alloy mounting
stud can withstand an installing torque up to 50 inch-pounds. JEDEC No. DO-5
package; outline 3, Outlines Section. Type 1N1198 is a discontinued type listed
for reference only; it is similar to type 1N1198A except for some slightly lower
ratings, and can be directly replaced by type 1N1198A.
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive load
TYPE INI198A
LOAD: RESISTIVE OR INDUCTIVE
CURVE TYPE OF OPERATION
A DIRECT CURRENT HEAT-SINK COOLING CHART
SINGLE PHASE •
THREE PHASE
S X PHASE TYPE IN1198A
NATURAL COOLING.
1 SINGLE-PHASE
OPERATION.
3 1-.. RECTIFIER STUD-
MOUNTED DIRECTLY
'1,,.S, ON HEAT SINK.
s — HEAT SINK: U4 •-THICK
4- COPPER WITH MAT
e BLACK SURFACE,
e. THERMAL
.6*.; EMISSIVITY=0.9
••••,..
120 140 160 160
CASE TEMPERATURE-•C v.
92C6-10746T1
\
t.f.
lu RATING CHART It
TYPE INI198A 24
SUPPLY FREQUENCY •60 CPS SINE WAVE
Cr Y TEMPERATURE•150•C
bi L RESISTIVE OR INDUCTIVE
RMS SUPPLY VOLTAGE MAXIMUM-RATED VALUE
AVERAGE FORWARD CURRENT.MAXIMUM-RATED
400 VALUE
tt.•
D- 5
300
ta \
o
gr
n 200
to
0 50 100 150 200
AMBIENT TEMPERATURE-%
a 100 92CM-10741T
a o
2 4 6 8 10 2 • 6 8100
SUR GE-CURRENT DURATION-CYCLES
92cs-lososu
106 RCA Transistor Manual
CHARACTERISTICS
Maximum Forward Voltage Dropt 0.6 volt
Maximum Reverse Current:
Dynamict 1.5 ma
tAverage value for one complete cycle at maximum peak reverse voltage, maximum
average forward current, and case temperature =- 150 C.
SILICON RECTIFIER
These types are reverse-polarity
versions of types 1N1198 and
1N1 198R 1N1198A, respectively. Type 1N1198R
SILICON RECTIFIER
Hermetically sealed 12-ampere
type for use at peak reverse volt-
.' N1199A ages up to 50 volts. It is used in
generator-type power supplies in
mobile equipment; dc-to-dc con-
verters and battery chargers; power IS
supplies for aircraft, marine, and missile equipment; transmitters, rf generators,
and dc-motor power supplies; machine-tool controls; welding and electroplat-
ing equipment; dc-blocking service; magnetic amplifiers, and a wide variety of
other heavy-duty applications. This type is designed to meet stringent en-
vironmental and mechanical specifications. The special copper-alloy mounting
stud can withstand an installing torque up to 25 inch-pounds. JEDEC No. DO-4
package; outline 2, Outlines Section. This type is identical with type 1N1206A
except for the following items:
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive load
CHARACTERISTICS
Maximum Reverse Current:
Dynamics 3 Ma
•Average value for one complete cycle at maximum peak reverse voltage, maximum
average forward current, and case temperature -= 150 C.
SILICON RECTIFIER
This type is a reverse-polarity
1N1199RA version of type 1N1109A. JEDEC No.
DO-4 package; outline 2, Outlines
Section.
Technical Data 107
SILICON RECTIFIER
1;
7) Hermetically sealed 12-ampere
type for use at peak reverse volt-
ages up to 100 volts. It is used in 1N1200A
generator-type power supplies in
mobile equipment; dc-to-dc con-
ic verters and battery chargers; power
supplies for aircraft, marine, and missile equipment; transmitters, rf generators,
and dc-motor power supplies; machine-tool controls; welding and electroplat-
ing equipment; dc-blocking service; magnetic amplifiers, and a wide variety
of other heavy-duty applications. This type is designed to meet stringent en-
vironmental and mechanical specifications. The special copper-alloy mounting
stud can withstand an installing torque up to 25 inch-pounds. JEDEC No. DO-4
package; outline 2, Outlines Section. This type is identical with type 1N1206A
except for the following items:
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive load
•Average value for one complete cycle at maximum peak reverse voltage, maximum
average forward current, and case temperature = 150 C.
SILICON RECTIFIER
This type is a reverse-polarity
version of type 1N1200A. JEDEC No. 1N1200RA
DO-4 package; outline 2, Outlines
S A
Ie Section.
SILICON RECTIFIER
Hermetically sealed 12-ampere
type for use at peak reverse volt-
ages up to 200 volts. It is used in
generator-type power supplies in 1N1202A
mobile equipment; dc-to-dc con-
verters and battery chargers; power
supplies for aircraft, marine, and missile equipment; transmitters, rf generators,
and dc-motor power supplies; machine-tool controls; welding and electroplat-
ing equipment; dc-blocking service; magnetic amplifiers, and a wide variety
of other heavy-duty applications. This type is designed to meet stringent en-
vironmental and mechanical specifications. The special copper-alloy mounting
stud can withstand an installing torque up to 25 inch-pounds. JEDEC No. DO-4
package; outline 2, Outlines Section. This type is identical with type 1N1206A
except for the following items:
MAXIMUM RATINGS
For power-supply frequency of GO cps, single-
phase operation, with resistive or inductive load
CHARACTERISTICS
Maximum Reverse Current:
Dynamic' 2 ma
•Average value for one complete cycle at maximum peak reverse voltage, maximum
average forward current, and case temperature = 150°C.
SILICON RECTIFIER
This type is a reverse-polarity
version of type 1N1202A. JEDEC No.
1N1202RA DO-4 package; outline 2, Outlines
Section.
SILICON RECTIFIER
Hermetically sealed 12-ampere
type for use at peak reverse volt-
1N1203A ages up to 300 volts. It is used in
generator-type power supplies in
mobile equipment; dc-to-dc con-
verters and battery chargers; power
supplies for aircraft, marine, and missile equipment; transmitters, rf generators,
and dc-motor power supplies; machine-tool controls; welding and electroplat-
ing equipment; dc-blocking service; magnetic amplifiers, and a wide variety
of other heavy-duty applications. This type is designed to meet stringent en-
vironmental and mechanical specifications. The special copper-alloy mounting
stud can withstand an installing torque up to 25 inch-pounds. JEDEC No. DO-4
package; outline 2, Outlines Section. This type is identical with type 1N1206A
except for the following items:
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive toad
CHARACTERISTICS
Maximum Reverse Current:
Dynamic' 1.75 Ina
•Average value for one complete cycle at maximum peak reverse voltage, maximum
average forward current, and case temperature .= 150°C.
SILICON RECTIFIER
This type is a reverse-polarity
version of type 1N1203A. JEDEC No.
1N1203RA DO-4 package; outline 2, Outlines
Section.
SILICON RECTIFIER
Hermetically sealed 12-ampere
type for use at peak reverse volt-
1N1204A ages up to 400 volts. It is used in
mobile equipment; dc-to-dc con-
verters and battery chargers; power
generator-type power supplies in Et tc
supplies for aircraft, marine, and missile equipment; transmitters, rf generators,
Technical Data 109
MAXIMUM RATINGS
For power-supply frequency of 60 cPs, sinate-
phase operation, with resistive or inductive load
CHARACTERISTICS
Maximum Reverse Current:
Dynamic* 1.5 ma
•Average value for one complete cycle at maximum peak reverse voltage, maximum
average forward current, and case temperature = 150 C.
SILICON RECTIFIER
This type is a reverse-polarity
version of type 1N1204A. JEDEC No. 1N1204RA
DO-4 package; outline 2, Outlines
Section.
SILICON RECTIFIER
Hermetically sealed 12-ampere
type for use at peak reverse volt-
ages up to 500 volts. It is used in 1N1205A
generator-type power supplies in
mobile equipment; dc-to-dc con-
ic verters and battery chargers; power
supplies for aircraft, marine, and missile equipment; transmitters, rf generators,
and dc-motor power supplies; machine-tool controls; welding and electroplat-
ing equipment; dc-blocking service; magnetic amplifiers, and a wide variety
of other heavy-duty applications. This type is designed to meet stringent en-
vironmental and mechanical specifications. The special copper-alloy mounting
stud can withstand an installing torque up to 25 inch-pounds. JEDEC No. DO-4
package; outline 2, Outlines Section. This type is identical with type 1N1206A
except for the following items:
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive load
CHARACTERISTICS
Maximum Reverse Current:
Dynamic. 1.25 ma
•Average value for one complete cycle at maximum peak reverse voltage, maximum
average forward current, and case temperature = 150°C.
110 RCA Transistor Manual
SILICON RECTIFIER
This type is a reverse-polarity
1N1205 RA version of type 1N1205A. JEDEC No.
DO-4 package; outline 2, Outlines
Section.
SILICON RECTIFIER
Hermetically sealed 12-ampere
type for use at peak reverse volt-
1N1 206A ages up to 600 volts. It is used in
generator-type power supplies in
mobile equipment; dc-to-dc con-
verters and battery chargers; power
supplies for aircraft, marine, and missile equipment; transmitters, rf generators,
and dc-motor power supplies; machine-tool controls; welding and electroplat-
ing equipment; dc-blocking service; magnetic amplifiers, and a wide variety
of other heavy-duty applications. This type is designed to meet stringent en-
vironmental and mechanical specifications. The special copper-alloy mounting
stud can withstand an installing torque up to 25 inch-pounds. JEDEC No. DO-4
package; outline 2, Outlines Section.
RATING CHART I
HEAT-SINK COOLING CHART
TYPE IN 1206A
LOAD RESISTIVE OR INDUCTIVE
TYPE IN1206A
_ NATURAL COOLING. CURVE TYPE OF OPERATION
SINGLE-PHASE OPERATION. A DIRECT CURRENT
RECTIFIER STUD-MOUNTED
SINGLE PHASE
_ DIRECTLY ON HEAT SINK,
- i
ii THREE PHASE
HEAT SINK: Ve -THICK COPPER
WITH MAT BLACK SURFACE, 0 SIX PHASE
- THERMAL EMISSIVITY =0.9
8 .. Iltfit.......
--Co
200
1.0
2
150
2
D 100
2 ".***--....,..........._
0 50 100 150 200
AMBIENT TEMPERATURE-% 11 50
92CM-1106811
O
4 6 810 2 4 6 13100
SURGE -CURRENT DURATION -CYCLES
92CS -110 66 T1
Technical Data 111
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive load
CHARACTERISTICS
Maximum Forward Voltage Drop* 0.55 volt
Maximum Reverse Current:
Dynamics 1 Ma
Statict 0.004 Ma
Maximum Thermal Resistance:
Junction-to-case 2 "C/watt
•Average value for one complete cycle at maximum peak reverse voltage, maximum
average forward current,and case temperature . 150 C.
tDC value at maximum peak reverse voltage and case temperature = 25°C.
SILICON RECTIFIER
This type is a reverse-polarity
version of type 1N1206A. JEDEC No. 1N1206RA
DO-4 package; outline 2, Outlines
Section.
SILICON RECTIFIER
Hermetically sealed 5-ampere
type for use at peak reverse volt-
ages up to 50 volts. It is used in 1N1612
generator-type power supplies in
mobile equipment; dc-to-dc con-
verters and battery chargers; power
supplies for aircraft, marine, and missile equipment; transmitters, rf generators,
and dc-motor power supplies; machine-tool controls; welding and electroplat-
ing equipment; de-blocking service; magnetic amplifiers, and a wide variety
of other heavy-duty applications. This type is designed to meet stringent en-
vironmental and mechanical specifications. The special copper-alloy mounting
stud can withstand an installing torque up to 25 inch-pounds. JEDEC No. DO-4
package; outline 2, Outlines Section. This type is identical with type 1N1616
except for the following items:
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive load
Peak Reverse Voltage 50 max volts
RMS Supply Voltage 35 max volts
DC Blocking Voltage 50 max volts
112 RCA Transistor Manual
SILICON RECTIFIER
This type is a reverse-polarity
1N1612R version of type 1N1612. JEDEC No.
DO-4 package; outline 2, Outlines
Section.
SILICON RECTIFIER
Hermetically sealed 5-ampere
type for use at peak reverse volt-
1N1613 ages up to 100 volts. It is used in
generator-type power supplies in
mobile equipment; dc-to-dc con-
verters and battery chargers; power
supplies for aircraft, marine, and missile equipment; transmitters, rf generators,
and dc-motor power supplies; machine-tool controls; welding and electroplat-
ing equipment; dc-blocking service; magnetic amplifiers, and a wide variety
of other heavy-duty applications. This type is designed to meet stringent en-
vironmental and mechanical specifications. The special copper-alloy mounting
stud can withstand an installing torque up to 25 inch-pounds. JEDEC No. DO-4
package; outline 2, Outlines Section. This type is identical with type 1N1616
except for the following items:
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive load
Peak Reverse Voltage 100 max volts
RMS Supply Voltage 70 max volts
DC Blocking Voltage 100 max volts
SILICON RECTIFIER
This type is a reverse-polarity
version of type 1N1613. JEDEC No.
1N1613R DO-4 package; outline 2, Outlines
Section.
SILICON RECTIFIER
Hermetically sealed 5-ampere
type for use at peak reverse volt-
1N1614 ages up to 200 volts. It is used in
generator-type power supplies in
mobile equipment; dc-to-dc con-
verters and battery chargers; power
supplies for aircraft, marine, and missile equipment; transmitters, rf geaerators,
and dc-motor power supplies; machine-tool controls; welding and electroplat-
ing equipment; dc-blocking service; magnetic amplifiers, and a wide variety
of other heavy-duty applications. This type is designed to meet stringent en-
vironmental and mechanical specifications. The special copper-alloy mounting
stud can withstand an installing torque up to 25 inch-pounds. JEDEC No. DO-4
package; outline 2, Outlines Section. This type is identical with type 1N1616
except for the following items:
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive load
Peak Reverse Voltage 200 max volts
RMS Supply Voltage 140 max volts
DC Blocking Voltage 200 max volts
Technical Data 113
SILICON RECTIFIER
This type is a reverse-polarity
version of type 1N1614. JEDEC No.
DO-4 package; outline 2, Outlines 1N1614R
Section.
SILICON RECTIFIER
Hermetically sealed 5-ampere
mobile equipment; dc-to-dc con-
type for use at peak reverse volt- 1N1615
ages up to 400 volts. It is used in
verters and battery chargers; power
generator-type power supplies in
supplies for aircraft, marine, and missile equipment; transmitters, rf generators,
and dc-motor power supplies; machine-tool controls; welding and electroplat-
ing equipment; dc-blocking service; magnetic amplifiers, and a wide variety
of other heavy-duty applications. This type is designed to meet stringent en-
vironmental and mechanical specifications. The special copper-alloy mounting
stud can withstand an installing torque up to 25 inch-pounds. JEDEC No. DO-4
package; outline 2, Outlines Section. This type is identical with type 1N1616
except for the following items:
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive load
SILICON RECTIFIER
This type is a reverse-polarity
version of type 1N1615. JEDEC No.
DO-4 package; outline 2, Outlines 1N1615R
Section.
SILICON RECTIFIER
Hermetically sealed 5-ampere
type for use at peak reverse volt-
ages up to 600 volts. It is used in 1N1616
generator-type power supplies in
mobile equipment; dc-to-dc con-
verters and battery chargers; power
supplies for aircraft, marine, and missile equipment; transmitters, rf generators,
and dc-motor power supplies; machine-tool controls; welding and electroplat-
ing equipment; dc-blocking service; magnetic amplifiers, and a wide variety
of other heavy-duty applications. This type is designed to meet stringent en-
vironmental and mechanical specifications. The special copper-alloy mounting
stud can withstand an installing torque up to 25 inch-pounds. JEDEC No. DO-4
package; outline 2, Outlines Section.
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive load
Peak Reverse Voltage
EMS Supply Voltage 600 max volts
420 max volts
114 RCA Transistor Manual
RATING CHART
I I I
TYPE IN 616
_LOAD +RESISTIVE OR INDUCTIVE
CURVE TYPE OF OPERATION
hen 4 A DIRECT CURRENT —
ge 6.25 B SINGLE PHASE
..-- C THREE PHASE
>2 5 8...........\- o SIX PHASE _
C
3.75 [b----.....................„...........
2.5
1.25
o
130 135 140 145 150 155 160 165 170 175
CASE TEMPERATURE-%
92CS-112957
CHARACTERISTICS
Maximum Forward Voltage Drops 1.5 volts
Maximum Reverse Current:
Dynamics 1 ma
Statict 0.01 Ina
SILICON RECTIFIER
This type is a reverse-polarity
version of type 1N1616. JEDEC No.
1N1616R DO-4 package; outline 2, Outlines
Section.
SILICON RECTIFIER q )
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with capacitor input to filter
Peak Reverse Voltage 400 max volts_
RMS Supply Voltage 140 max volts
Average Forward Current:
At ambient temperatures up to 75°C 500 max man
At ambient temperatures above 75°C See Rating Charff
Peak Recurrent Current:
At ambient temperatures up to 75°C 5max amperes_
At ambient temperatures above 75 °C See Rating Charl—
Technical Data 115
CHARACTERISTICS
Maximum Forward Voltage Drop. 3 volts
Maximum Reverse Current (at maximum peak reverse voltage):
At ambient temperature of 25°C 100 pa
At ambient temperature of 100 °C 1 ma
TYPICAL CHARACTERISTICS
RATING CHART
FULL-WAVE VOLTAGE DIVIDER
TYPE INI763 TYPE INI763
_SUPPLY FREOUENCY•60 CPS AMBIENT TEMPERATURE •25 °C
-SUPPLY FREQUENCY •60 CPS
INPUT 5.6
— 117 VOLTS AC OHMS T10
.. DC
o OUTPUT
_c VOLTAGE
2 400
o
u 300 C •250
o
100
25
200 50
O
-75 -50 -25 0 25 50 75 100
AMBIENT TEMPERATURE-°C I
00 0
0.1 02 03 04 0.5 06 07
SZCS-972772 DC LOAD AMPERES
92CS-9716T
TYPICAL OPERATION
As Half-Wave Rectifier
i
. The transformer series resistance or other resistance in the line may be deducted from
the value shown.
116 RCA Transistor Manual
SILICON RECTIFIER A
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with capacitor input to filter
CHARACTERISTICS
Maximum Forward Voltage Drop* 3 volts
Maximum Reverse Current (at maximum peak reverse voltage) :
At ambient temperature of 25°C 100 ma
At ambient temperature of 100°C 1 Ma
TYPICAL CHARACTERISTICS
RATING CHART FULL-WAVE VOLTAGE DIVIDER
TYPE INI764
TYPE INI764 AMBIENT TEMPERATURE •25 °C
_SUPPLY FREQUENCY.60 CPS _SUPPLY FREQUENCY. 60 CPS
›z
>4 1.0 6.8 OHMS
• (00
INPUT
II? VOLTS AC Il DC
OUTPUT
VOLTAGE
-
..-.
ar500 _
1-3W
z a 75
t5'2g• ó I I
. 400 C•2501.0
50 o
100
25 300 So
o
••75 -50 -25 0 25 50 75 100 200 0 01 02 03 04 0.5 06 01.
AMBIENT TEMPERATURE-'C DG LOAD AMPERES
92CS-9727T2 SZCS-9717T
TYPICAL OPERATION
As Half-Wave Rectifier
150 150 150 volts
RMS Supply Voltage 100 250 pi
50
Filter-Input Capacitor 6.8 6.8 ohms
Surge-Limiting Resistancet 6.8
DC Output Voltage (Approx.) at input to filter: 158 184 190 volts
At half-load current of 250 milliamperes volts
128 170 178
At full-load current of 500 milliamperes
Voltage Regulation (Approx.) : 30 14 12 volts
Half-load to full-load current
Technical Data 117
tThe transformer series resistance or other resistance in the line may be deducted from
the value shown.
DIODE
Hermetically sealed germanium
type used to compensate for the ef-
fects of temperature and supply- 1N2326
voltage changes in class B push-pull
audio-frequency power-amplifier
stages. In a typical af power-ampli-
fier circuit, it maintains the bias voltage applied to the output stage within
±-0.015 volt for supply-voltage variations up to —40 per cent, and simul-
taneously compensates for ambient-temperature variations over the range from
—20 to 71°C. Package is similar to JEDEC No. TO-1 (outline 4, Outlines Sec-
tion) except that lead No. 3 is omitted.
MAXIMUM RATINGS
Temperature and voltage-cornpensaticrn service
CHARACTERISTICS
Forward Voltage Drop:
At average forward ma — 2
135 mv
At average forward ma — 100
260 mv
• Operation with reverse voltages is not recommended.
200
o
cc
3 1 50
E
Lo 100
e
50
SILICON RECTIFIER 4 1.
)
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-phase operation
Resistive or Capacitive
Inductive Load Load
Peak Reverse Voltage 50 max 50 max volts
RMS Supply Voltage 35 max 17 max volts
DC Blocking Voltage 50 max 50 max volts
CHARACTERISTICS
Maximum Reverse Current (at maximum peak reverse voltage) . 0.4 Ma
SILICON RECTIFIER
Hermetically sealed type used in
power-supply applications at peak
1N2859 reverse voltages up to 100 volts. This
type has a maximum average-for-
ward-current rating of 750 milli-
amperes for resistive or inductive
loads and 500 milliamperes for capacitive loads. JEDEC No. DO-1 package;
outline 1, Outlines Section. This type is identical with type 1N2864 except for
the following items:
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-phase operation
Resistive or Capacitive
Inductive Load Load
Peak Reverse Voltage 100 max 100 max volts
RMS Supply Voltage 70 max 35 max volts
DC Blocking Voltage 100 max 100 max volts
CHARACTERISTICS
Maximum Reverse Current (at maximum peak reverse voltage) . 0.4 ma
SILICON RECTIFIER
Hermetically sealed type used in
power-supply applications at peak
1N2860 reverse voltages up to 200 volts. This
type has a maximum average-for-
ward-current rating of 750 milli-
amperes for resistive or inductive
loads and 500 milliamperes for capacitive loads. JEDEC No. DO-1 package
outline 1, Outlines Section. This type is identical with type 1N2864 except fox
the following items:
Technical Data 119,
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-phase operation
Resistive or Capacitive
Inductive Load Load
Peak Reverse Voltage 200 max 200 max volts
EMS Supply Voltage 140 max 70 max volts
DC Blocking Voltage 200 max 200 max volts
CHARACTERISTICS
Maximum Reverse Current (at maximum peak reverse voltage) . 0.4 ins
A SILICON RECTIFIER
Hermetically sealed type used in
power-supply applications at peak
reverse voltages up to 300 volts. This
type has a maximum average-for- 1N2861
ward-current rating of 750 milli-
amperes for resistive or inductive
loads and 500 milliamperes for capacitive loads. JEDEC No. DO-1 package;
outline 1, Outlines Section. This type is identical with type 1N2864 except for
the following items:
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-phase operation
Resistive or Capacitive
Inductive Load Load
Peak Reverse Voltage 300 max 300 max volts
EMS Supply Voltage 210 max 105 max volts
DC Blocking Voltage 300 max 300 max volts
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-phase operation
Resistive or Capacitive
Inductive Load Load
Peak Reverse Voltage 400 max 400 max volts
EMS Supply Voltage 280 max 140 max volts
DC Blocking Voltage 400 max 400 max volts
SILICON RECTIFIER
Hermetically sealed type used in
power-supply applications at peak
reverse voltages up to 500 volts. This 1N2863
type has a maximum average-for-
ward-current rating of 750 milli-
amperes for resistive or inductive
loads and 500 milliamperes for capacitive loads. JEDEC No. DO-1 package;
120 RCA Transistor Manual
outline 1, Outlines Section. This type is identical with type 1N2864 except for
the following items:
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-phase operation
Resistive or Capacitive
Inductive Load Load
Peak Reverse Voltage 500 max 500 max volts
RMS Supply Voltage 350 max 175 max volts
DC Blocking Voltage 500 max 500 max volts
SILICON RECTIFIER
Hermetically sealed type used in
power-suprly applications at peak
reverse voltages up to 600 volts. This
1N2864 type has a maximum average-for-
ward-current rating of 750 milli-
amperes for resistive or inductive
loads and 500 milliamperes for capacitive loads. JEDEC No. DO-1 package;
outline 1, Outlines Section.
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-phase operation
Resistive or Capacitive
Inductive Load Load
Peak Reverse Voltage 600 max 600 max volts
RMS Supply Voltage 420 max 210 max volts
DC Blocking Voltage 600 max 600 max volts
Average Forward Current:
At ambient temperatures up
750 max 500 max ma
to 75°C
At ambient temperatures
above 75°C See Rating Chart I
Surge Current:
For one cycle at ambient
temperature of 25°C 40 max 40 max amperes
For more than one cycle and at
other ambient temperatures See Rating Chart II
Ambient-Temperature Range:
Operating and Storage
—65 to 125 —65 to 125 oc
tn
RATING CHART IC
lai RATING CHART I
TYPE IN2864
a TYPE 1N2864
' 50 -SINUSOIDAL SUPPLY-VOLTAGE
750 FREQUENCY (CPS)°60
if. 40
o 625
FOR RESISTIVE OR
INDUCTIVE LOADS o.
e500 e, 30
o
o
id 375
5 20
o
zso - CAPACITIVE LOADS
FOR k 10
100°C
a 125
a 0 2 4 6aO 2 4 6 8100
Pc 0 50 100 150 200 SURGE -CURRENT DURATION-CYCLES
4 92CS -104761
AMBIENT TEMPERATURE -°C
92CS- 04741
CHARACTERISTICS volts
Maximum Forward Voltage Drop* 1.2 ma
Maximum Reverse Current (at maximum peak reverse voltage) 0.3
1N3128
See RCA TUNNEL DIODE CHART starting on page
324 for complete data on these types.
to
1N3130
SILICON RECTIFIER
Pi<
Hermetically sealed type used in
power-supply applications at peak
reverse voltages up to 200 volts. This
type has a maximum average-for- 1N3193
ward-current rating of 750 milli-
A amperes for resistive or inductive
loads and 500 milliamperes for capacitive loads. It is designed to meet stringent
temperature-cycling and humidity requirements of critical applications. Pack-
age is similar to JEDEC No. TO-1; outline 21, Outlines Section. This type is
identical with type 1N3196 except for the following items:
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-phase operation
Resistive or Capacitive
Inductive Load Load
Peak Reverse Voltage 200 max 200 max volts
RMS Supply Voltage 140 max 70 max volts
Average Forward Current:
At ambient temperatures up
to 75°C 750 max 500 max ma
Peak Recurrent Current 6max amperes
4 15 SILICON RECTIFIER
Hermetically sealed type used in
power-supply applications at peak
reverse voltages up to 400 volts. This 1N3194
type has a maximum average-for-
ward-current rating of 750 milli-
A amperes for resistive or inductive
loads and 500 milliamperes for capacitive loads. It is designed to meet stringent
temperature-cycling and humidity requirements of critical applications. Pack-
age is similar to JEDEC No. TO-1; outline 21, Outlines Section. This type is
identical with type 1N3196 except for the following items:
TYPICAL CHARACTERISTICS
TYPICAL CHARACTERISTICS
HALF-WAVE VOLTAGE DIVIDER FULL-WAVE VOLTAGE DIVIDER
TYPE IN3194 TYPE IN314 I
AMBIENT TEMPERATURE •25 °C AMBIENT TEMPERATURE •25 °C
-SUPPLY FREQUENCY. 60 CPS -SUPPLY FREQUENCY •60CPS
W e
INPUT 5.6 G DC -
117 VOLTS RUS OHMS GI OUTPUT
TPUT
- VOLTAGE
O
350
5
300
3
C•250µf
250 250
100
200 0 0.1 02 0.3 04 0.5 06 07 20° 0
0.1 0.2 03 0.4 OS 0.6 0.7
DC LOAD AMPERES DC LOAD AMPERES
92CS-K191671 62CS-10916TI
122 RCA Transistor Manual
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-phase operation
Resistive or Capacitive
Inductive Load Load
Peak Reverse Voltage 400 max 400 max volts
RMS Supply Voltage 280 max 140 max volts
Average Forward Current:
At ambient temperatures up
to 75°C 750 max 500 max ma
Peak Recurrent Current — 6max amperes
SILICON RECTIFIER
Hermetically sealed type used in
power-supply applications at peak
1 N3195 reverse voltages up to 600 volts. This
type has a maximum average-for-
ward-current rating of 750 milli-
amperes for resistive or inductive
loads and 500 milliamperes for capacitive loads. It is designed to meet stringent
temperature-cycling and humidity requirements of critical applications. Pack-
age is similar to JEDEC No. TO-1; outline 21, Outlines Section. This type is
identical with type 1N3196 except for the following items:
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-phase operation
Resistive of Capacitive
Inductive Load Load
Peak Reverse Voltage 600 max 600 max volts
RMS Supply Voltage 420 max 210 max volts
Average Forward Current:
At ambient temperatures up
to 75°C 750 max 500 max ma
Peak Recurrent Current 6max amperes
SILICON RECTIFIER
Hermetically sealed type used in
power-supply applications at peak
1N3196 reverse voltages up to 800 volts. This
type has a maximum average-for-
ward-current rating of 500 milli-
amperes for resistive or inductive
loads and 400 milliamperes for capacitive loads. It is designed to meet stringent-
temperature-cycling and humidity requirements of critical applications. Pack-
age is similar to JEDEC No. TO-1; outline 21, Outlines Section.
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-phase operation
Resistive or Capacitive
Inductive Load Load
Peak Reverse Voltage 800 max 800 max volt:
RMS Supply Voltage 560 max 280 max volte
Average Forward Current:
At ambient temperatures up
to 75°C 500 max 400 max Mt
At other ambient temperatures See Rating Chart
Peak Recurrent Current — 5max ampere
Surge Current:
For turn-on time of 2
milliseconds duration — 35 max ampere
Ambient-Temperature Range:
Operating —65 to 100 —65 to 100 .(
Storage —65 to 175 —65 to 175 .(
Lead Temperature:
For 10 seconds maximum 255 max 255 max .
m.
Technical Data 123
CHARACTERISTICS
Maximum Forward Voltage Drop* 1.2 volts
Maximum Reverse Current:
Dynamict 0.2 ma
Statict 0.005 ma
•Instantaneous value at average forward amperes = 0.5 and ambient temperature = 25°C.
$Average value for one complete cycle at maximum peak reverse voltage, maximum
average forward current, and ambient temperature = 75°C.
DC value at maximum peak reverse volts, average forward current = 0, and ambient
temperature = 25°C.
o
cc
g35
230
§ 25
1 2°
1
15
25 10
z 5
o
.75 -50 -25 0 25 50 75 100
AMBIENT TEhIPERATURE-°C
o 0.5 I 15 2 25 3
INSTANTANEOUS FORWARD VOLTS
92C5-972772 92CS-9750T2
SILICON RECTIFIER
Hermetically sealed type used in
power-supply applications at peak
reverse voltages up to 200 volts. This
type has a maximum average-for- 1N3253
ward-current rating of 750 milli-
A amperes for resistive or inductive
loads and 500 milliamperes for capacitive loads. It is designed to meet stringent
temperature-cycling and humidity requirements of critical applications. Pack-
age is similar to JEDEC No. TO-1; outline 22, Outlines Section. This type is
identical with type 1N3193 except that it has a transparent, high-dielectric-
strength plastic sleeve over the metal case.
1( 5 SILICON RECTIFIER
Hermetically sealed type used in
power-supply applications at peak
reverse voltages up to 400 volts. This 1N3254
type has a maximum average-for-
ward-current rating of 750 milli-
A amperes for resistive or inductive
-loads and 500 milliamperes for capacitive loads. It is designed to meet stringent
stemperature-cycling and humidity requirements of critical applications. Pack-
age is similar to JEDEC No. TO-1; outline 22, Outlines Section. This type is
identical with type 1N3194 except that it has a transparent, high-dielectric-
strength plastic sleeve over the metal case.
124 RCA Transistor Manual
SILICON RECTIFIER OK
Hermetically sealed type used in
power-supply applications at peak
1N3255 reverse voltages up to 600 volts. This
type has a maximum average-for-
ward-current rating of 750 milli-
amperes for resistive or inductive UA
loads and 500 milliamperes for capacitive loads. It is designed to meet stringent
temperature-cycling and humidity requirements of critical applications. Pack-
age is similar to JEDEC No. TO-1; outline 22, Outlines Section. This type is
identical with type 1N3195 except that it has a transparent, high-dielectric-
strength plastic sleeve over the metal case.
SILICON RECTIFIER
Hermetically sealed type used
us
power-supply applications at peak
in
45
1N3256 reverse voltages up to 800 volts. This
type has a maximum average-for-
ward-current rating of 500 milli-
amperes for resistive or inductive A
loads and 400 milliamperes for capacitive loads. It is designed to meet stringent
temperature-cycling and humidity requirements of critical applications. Pack-
age is similar to JEDEC No. TO-1; outline 22, Outlines Section. This type is
identical with type 1N3196 except that it has a transparent, high-dielectric-
strength plastic sleeve over the metal case.
SILICON RECTIFIER
Hermetically sealed type used in
power-supply applications at peak
1 N3563 reverse voltages up to 1000 volts.
This type has a maximum average-
forward-current rating of 400 milli-
amperes for resistive or inductive
loads and 300 milliamperes for capacitive loads. It is designed to meet stringent
temperature-cycling and humidity requirements of critical applications. Pack-
age is similar to JEDEC No. TO-1; outline 22, Outlines Section. In addition,
this type has a transparent, high-dielectric-strength plastic sleeve over the
metal case and a protective coating to guard against the effects of severe en-
vironmental conditions. This type is electrically identical with type 1N3196
except for the following items:
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-phase operation
Resistive or Capacitive
Inductive Load Load
Peak Reverse Voltage 1000 max 1000 max volts
R1V1S Supply Voltage 700 max 350 max volts
Average Forward Current:
At ambient temperatures up
to 75°C 400 max 300 max ma
Peak Recurrent Current 4max amperes
Technical Data 125
SILICON RECTIFIER
Hermetically sealed 125-milli-
ampere type used in power-supply
applications at peak reverse voltages
up to 100 volts. This type is designed 1N3754
to meet stringent temperature-
cycling and humidity requirements
of critical applications. Package is similar to JEDEC No. TO-1 (outline 4, Out-
lines Section) except that lead No. 3is omitted. It is identical with type 1N3756
except for the following items:
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-phase operation, with capacitive load
Peak Reverse Voltage 100 max volts
RD4S Supply Voltage 35 max volts
SILICON RECTIFIER
Hermetically sealed 125-milli-
ampere type used in power-supply
applications at peak reverse voltages
up to 200 volts. This type is designed 1N3755
to meet stringent temperature-
cycling and humidity requirements
of critical applications. Package is similar to JEDEC No. TO-1 (outline 4, Out-
lines Section) except that lead No. 3is omitted. It is identical with type 1N3756
except for the following items:
BMAXIMUM RATINGS
For power-supply frequency of 60 cps, single-phase operation, with capacitive load
Peak Reverse Voltage 200 max volts
-RMS Supply Voltage 70 max volts
SILICON RECTIFIER
Hermetically sealed 125-milli-
ampere type used in power-supply
applications at peak reverse voltages
up to 400 volts. This type is designed 1N3756
to meet stringent temperature-
cycling and humidity requirements
d critical applications. Package is similar to JEDEC No. TO-1 (outline 4, Out-
ines Section) except that lead No. 3 is omitted.
mAAXIMUM RATINGS
For power-supply frequency of 60 cps, single-phase operation, with capacitive toad
HARACTERISTICS
daximum Forward Voltage Drop* 1 volt
126 RCA Transistor Manual
DYNAMIC CHARACTERISTICS
Al00
CAT MAXIMUM AVERAGE '-
2 75 4 FORWARD CURRENT AND -
AMBIENT TEMPERATURE•65C)
154
g50 %O le
H3756
1
ID 25
o
20 30 40 50 60 70 80 90 100
AMBIENT TEMPERATURE—"C 920 -11670
TYPICAL CHARACTERISTICS 4
HALF-WAVE RECTIFIER NJ
TYPÉ IN3756
AMBIENT TEMPERATURE •
-SUPPLY FREQUENCY= 60 CPS
25°C e2 STATIC CHARACTERISTICS -
(AT AVERAGE FORWARD
CURRENT•0 AND AMBIENT
5.6 DC TEMPERATURE • 25°C)
IR INPUTMIAS OHMS OUTPUT
t-, leo
o 117 VOLTS VOLTAGC
c -I-
1
Here
IN3756
o 0_
e
2160
100 4
0140 50
2
ISO
100
25 50 75 100 125 150 0 50 100 150 200 250 300 350 40r
0
DC LOAD MILLIAMPERES 92C3-11672t REVERSE VOLTS 92C1A-11671
1N3847
See RCA TUNNEL DIODE CHART for complete
to data on these tunnel diodes and rectifiers.
1N3863
TWIN DIODE
Hermetically sealed germanium
type used in high-speed switching teDI
service in electronic data-processing
2DG001 systems. Maximum ratings: dc re-
verse voltage = —20 volts; average
forward current = —40 milliamperes;
ambient temperature range -= —65 to 85°C. Package is similar to JEDEC
TO-33 (outline 13, Outlines Section) except that lead No. 2 is omitted. This
a discontinued type listed for reference only.
Technical Data 127
TRANSISTOR
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —30 max volts
Collector Current —50 max ma
Emitter Current 50 max ma
Transistor Dissipation:
At ambient temperatures up to 25°C 150 max mw
At ambient temperature of 50°C 80 max mw
At ambient temperature of 70°C 30 max mw
Ambient-Temperature Range:
Operating —65 to 70 oC
Storage —65 to 85 oC
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector µa = —20
and emitter current — 0) —30 min volts
Collector-Cutoff Current (with collector-to-base volts = —12
and emitter current — 0) —10 max Pa
Emitter-Cutoff Current (with emitter-to-base volts = —12 and
collector current = 0) —10 max pa
Thermal Resistance:
Junction-to-ambient 0.4 0C/mw
In Common-Base Circuit
Small-Signal Forward-Current-Transfer-
Ratio Cutoff Frequency:
With collector-to-base volts = —6 and collector ma = —1 700 kc
With collector-to-base volts = —3 and collector ma = —0.2 530 kc
Power Gain (with collector-to-emitter volts = —6, collector ma
= —1, input resistance = 170 ohms, and load resistance =
0.5 megotun) 32.4 db
750
-20
-500
-
-14 -16
COLLECTOR-TO-EMITTER VOLTS InCIA-8512U
In Common-Emitter Circuit
Small-Signal Forward-Current-Transfer-
Ratio Cutoff Frequency:
With collector-to-emitter volts = —6 and collector ma = —1 .. 13.9 kc
With collector-to-emitter volts = —3 and collector ma = —0.2 16.5 kc
128 RCA Transistor Manual
In Common-Collector Circuit
tn 3.0
-50
1- -2.5
-o
-40
-30
-10
TRANSISTOR
Germanium p-n-p type used
in large-signal audio-frequency am-
2INki 109 plifier applications. It is used in
class B push-pull power-output
stages of battery-operated portable
radio receivers and audio amplifiers
and in class A high-gain driver stages. JEDEC No. TO-40 package; outline 15,
Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —35 max volts
Collector-to-Emitter Voltage —25 max volts
Emitter-to-Base Voltage (with collector open) —12 max volts
Collector Current —150 max ma
Emitter Current 70 max ma
Transistor Dissipation:
At ambient temperatures up to 25°C 165 max mw
At ambient temperatures above 25°C See curve page 80
Temperature Range:
Operating —65 to 71 oc
Storage —65 to 85 "C
Lead Temperature (for 10 seconds maximum) 255 max °C
CHARACTERISTICS
Collector-Cutoff Current (with collector-to-base volts = —30
and emitter current = 0) —7 max /La
Emitter-Cutoff Current (with emitter-to-base volts = —12 and
collector current — 0) —7 max ma
Base-to-Emitter Voltage (with collector-to-emitter volt = —1
and collector ma = —50 ma) 0.2 to 0.4 volt
Technical Data 129
In Common-Base Circuit
In Common-Emitter Circuit
DC Forward Current-Transfer Ratio (with collector-to-emitter
volts =_ —6, collector ma =- —1, and frequency =- 1 kilocycle) 50 to 150
Input Resistance at 1 kilocycle 1000 to 4000 ohms
,x - 30
tr -30
o o
L3 20
8 20
- I0
0 -I 0
o
-12
II
-10
0. 9
-0.8
07
-0.6
0.5
-0.4
0.3
-0.1
o -0 -12 -4 -16
0
TRANSISTOR
Germanium p-n-p type used
primarily in 455-kilocycle inter-
2N'I39 mediate-frequency amplifier appli-
cations in battery-operated portable
radio receivers and automobile radio
receivers operating from either a E
6-volt or a 12-volt supply. JEDEC No. TO-40 package; outline 15, Outlines
Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —16 max volts
Emitter-to-Base Voltage (with collector open) —12 max volts
Collector Current —15 max ma
Emitter Current 15 max ma
Transistor Dissipation 35 max mw
Ambient-Temperature Range:
Operating —65 to 70 °C
Storage —65 to 85 °C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector µa
= —10 and emitter current = 0) —16 min volts
Collector-Cutoff Current (with collector-to-base volts = —12
and emitter current — 0) —6 max 40
Emitter-Cutoff Current (with emitter-to-base volts = —12
and collector current = 0) —40 max µa
In Common-Base Circuit
In Common-Emitter Circuit
50
-40
-30
-10
-0.5
-2 -4 -6 -8 -O -2 -4 -6 -8 -20
COLLECTOR-TO-EMITTER VOLTS 92CM- 9849T1
Technical Data 131
TRANSISTOR
Germanium p-n-p type used
primarily in converter and mixer-
oscillator applications in AM battery- 2N140
operated portable radio receivers and
automobile radio receivers operating
from either a 6-volt or a 12-volt
supply. JEDEC No. TO-40 package; outline 15, Outlines Section. For curves
of typical collector characteristics, refer to type 2N139.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —16 max volts
Emitter-to-Base Voltage (with collector open) —0.5 max volt
Collector Current —15 max ma
Emitter Current 15 max ma
Transistor Dissipation 80 max mw
Ambient-Temperature Range:
Operating —65 to 71 •C
Storage —65 to 85 •c
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector µa --- —10
and emitter current = 0) —16 min volts
Collector-Cutoff Current (with collector-to-base volts = —12
and emitter current — 0) —6 max /La
Emitter-Cutoff Current (with emitter-to-base volts = —0.5
and collector current — 0) —12 max pa
In Common-Emitter Circuit
POWER TRANSISTOR
Germanium p-n-p type used in
a wide variety of switching and am-
plifier applications in industrial and 2N173
military equipment requiring tran-
sistors having high voltage, current,
a and dissipation values. It is used in
power-switchinL, voltage- and current-regulating, dc-to-dc converter, inverter,
power-supply, and relay- and solenoid-actuating circuits; and in low-frequency
oscillator and audio-amplifier service. This type is designed to provide satisfac-
tory performance under extreme environmental conditions of temperature,
moisture, and altitude; it is stud-mounted to provide positive heat-sink contact,
and has a cold-weld seal to insure reliable performance under severe environ-
mental conditions. JEDEC No. TO-36 package; outline 14, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter-to-base volts = —1.5) —60 max volts
Emitter-to-Base Voltage (with collector open) —40 max volts
Collector Current —15 max amperes
Emitter Current 15 max amperes
Base Current —4 max amperes
Transistor Dissipation:
At case temperatures up to 25°C 150 max watts
At case temperatures above 25°C See curve page 80
Case-Temperature Range:
Operating and storage —65 to 100 0C
132 RCA Transistor Manual
CHARACTERISTICS
Collector-to-Emitter Breakdown Voltage:
With base short-circuited to emitter and collector amperes
= 0.3 -50 min volts
With base open and collector amperes - 0.3 -50 volts
With base open and collector amperes - -1 -45 min volts
Base-to-Emitter Voltage (with collector-to-emitter volts = -2
and collector amperes = -0.65 volt
Emitter-to-Base Voltage (with collector-to-base volts = -80
and emitter current = 0) -0.15 volt
Collector-to-Emitter Saturation Voltage (with collector
amperes = -12 and base amperes = -2) -0.3 volt
Collector-to-Emitter Reach-Through Voltage -60 min volts
Emitter-Cutoff Current (with emitter-to-base volts = -40
and collector current - 0) -1 ma
Collector-Cutoff Current:
With collector-to-base volts = -2 and emitter current = O -100 Fia
With collector-to-base volts = -60 and emitter current = O -2 ma
Thermal Resistance (junction-to-case) 0.35 °C/watt
Thermal Capacity (for pulses in the 14o-10-millisecond range) 0.075 watt-sec/°C
Thermal Time Constant 26.25 msec
In Common-Emitter Circuit
-oge e'
ce
\e
ee
e I
O -0.2 -0.4 -0.6 -0.8 -0.1 -0.2 -0.3 -0.4 -0.5
BASE-TO-EMITTER VOLTS BASE AMPERES
92CS-10709T 92C5-10712T
CHARACTERISTICS
HARACTERISTICS
1111111 1
TYPE 2NI73
COMMON
CASE TEMPERATURE.25•C
Technical Data 133
POWER TRANSISTOR
E. e
so
.......".c.
eve
/ eel°
0 -02 -0.4 -0.6 -0.8
BASE-TO-EMITTER VOLTS 0 -0.2 -0.4 -0.6 -0.8
BUS-10710T BASE AMPERES
82 Ci -107111'
CHARACTERISTICS
Collector-to-Emitter Breakdown Voltage:
With base short-circuited to the emitter and collector
amperes = —0.3 —70 min volts
With base open and collector amperes — —1 —55 min volts
Base-to-Emitter Voltage (with collector-to-emitter volts = —2
and collector amperes = —5) —0.65 volt
Emitter-to-Base Voltage (with collector-to-base volts = —80
and emitter current — 0) —1 max volt
Collector-to-Emitter Saturation Voltage (with collector
amperes = —12 and base amperes = —2) —0.3 volt
Collector-to-Emitter Reach-Through Voltage —80 volts
Emitter-Cutoff Current (with emitter-to-base volts = —60 and
collector current = 0) —1 ma
134 RCA Transistor Manual
Collector-Cutoff Current:
With collector-to-base volts = —2 and emitter current = o —Ho pa
With collector-to-base volts = —80 and emitter current = 0 —2 ma
Thermal Resistance (junction-to-case) 0.35 "C/watt
Thermal Capacity (for pulses in the 1-to-10-millisecond range) 0.075 watt-sec/°C
Thermal Time Constant 26.25 rnsec
In Common-Emitter Circuit
TRANSISTOR
Germanium p-n-p type used in
low-level preamplifier or input stages
2N175 of audio-frequency amplifiers. This
type is free from microphonism and
hum and has a low noise figure. E
These features make it possible to
obtain high small-signal sensitivity in transistorized audio equipment such as
hearing aids, microphone preamplifiers, and recorders. In addition, the low
noise figure and the low input impedance permit the design of audio amplifiers
in which the transistor is operated directly from low-level, low-impedance
devices such as magnetic microphones and magnetic pickups without an input
coupling transformer. JEDEC No. TO-40 package; outline 15, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —10 max volts
Emitter-to-Base Voltage (with collector open) —10 max volts
Technical Data 135
In Common-Base Circuit
In Common-Emitter Circuit
-L5 15
RES"
Bee hilcROse
-10
LO
0.5
O -2 -4 -6 -8 -10
COLLECTOR-TO-EMITTER VOLTS 9204 - 1391411
POWER TRANSISTOR
Germanium p-n-p type used in
large-signal audio-frequency ampli-
fier applications. It is used in class
A power-output stages and class 13 2N176
push-pull amplifier stages in auto-
mobile radio receivers. Package is
similar to JEDEC No. TO-3; outline 23, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —40 max volts
Collector Current —3 max amperes
Emitter Current 3max amperes
Transistor Dissipation:
At mounting-flange temperatures up to 80°C• 10 max watts
Mounting-Flange-Temperature Range:
Operating and storage —65 to 90 °C
CHARACTERISTICS
Collector-to-Emitter Breakdown Voltage (with collector ma
= —330 and base short-circuited to emitter) —30 min volts
Collector-Cutoff Current (with collector-to-base volts = —30
and emitter current — 0) —3 max ma
Emitter-Cutoff Current (with emitter-to-base volts = —10
and collector current = 0) —2 max ma
Thermal Resistance:
Junction-to-ambient 1 °C/ watt
In Common-Emitter Circuit
TRANSISTOR
Germanium p-n-p type used in
low-power audio-frequency ampli-
fier applications. JEDEC No. TO-1
2N215 package; outline 4, Outlines Section.
This type is electrically identical E
with type 2N104.
TRANSISTOR
Germanium p-n-p type used in
large-signal audio-frequency ampli -
2N217 fier applications. It is used in class
B push-pull power-output stages of
battery-operated portable radio re-
ceivers and audio amplifiers and in
class A high-gain driver stages. JEDEC No. TO-1 package; outline 4, Outlines
Section. This type is electrically identical with type 2N109.
TRANSISTOR
Germanium p-n-p type used
primarily in 455-kilocycle intermedi-
2N218 ate-frequency amplifier applications
in battery-operated portable radio
receivers and automobile radio re-
ceivers operating from either a 6-
volt or a 12-volt supply. JEDEC No. TO-1 package; outline 4, Outlines Section.
This type is electrically identical with type 2N139.
Technical Data 137
TRANSISTOR
Germanium p-n-p type used
primarily in converter and mixer-
oscillator applications in AM battery- 2N219
operated portable radio receivers and
c automobile radio receivers operating
from either a 6-volt or a 12-volt
supply. JEDEC No. TO-1 package; outline 4, Outlines Section. This type is
electrically identical with type 2N140.
TRANSISTOR
Germanium p-n-p low-noise
type used in low-level preamplifier
or input stages of audio-frequency
amplifiers. JEDEC No. TO-1 pack- 2N220
age; outline 4, Outlines Section. This
type is electrically identical with
type 2N175.
TRANSISTOR
Germanium p-n-p type used in
large-signal audio-frequency am-
plifier
single-ended
applications.
or double-ended
It is usedout-
in 2N270
put stages, in high-gain class A
aa c driver stages of radio receivers and
audio amplifiers, and in class B push-pull audio-amplifier service. This type is
also used in battery-operated equipment such as radio receivers, communica-
tion receivers, and phonographs. Package is similar to JEDEC No. TO-7; out-
line 25, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —25 max volts
Emitter-to-Base Voltage (with collector open) —12 max volts
Collector Current:
Peak —150 max ma
DC —75 max ma
Emitter Current:
Peak 150 max ma
DC 75 max ma
Transistor Dissipation:
At ambient temperatures up to 25°C 250 max mw
At ambient temperature of 55°C 150 max mw
At ambient temperature of 71°C 60 max mw
Ambient-Temperature Range:
Operating —65 to 71 .0
Storage —65 to 85 .0
CHARACTERISTICS
In Common-Emitter Circuit
DC Forward Current-Transfer Ratio (with collector-to-emitter
volts = —1 and collector ma = —150)
138 RCA Transistor Manual
to 120
-14
-1.2
-10
ea
kTJ -0 13
E 60
-0.4
o
-40
BASE MILLIAMPERES -02
-20
J-05
•et
D 100
e
cr -75
je
O
ij -50
O
25 G
-I -2 -3 -4 -5 -6 -05 -1 -2
BASE-TO-EMITTER VOLTS BASE MILLIAMPERES
sacs -91131T 92CS-9179t
Technical Data 139
TRANSISTOR
IS Germanium p-n-p type used in
rf and if amplifier circuits; oscillator,
mixer, and converter circuits; and 2N274
low-level video-amplifier circuits in
0 industrial and military equipment.
It is used in the design of rf circuits
having high input-circuit efficiency, excellent operating stability, good auto-
matic-gain-control capabilities over a wide range of input-signal levels, and
good signal-to-noise ratio. The drift-field construction provides low base re-
sistance and collector-transition capacitance, and improves performance at
higher frequencies. The center lead connected internally to the metal case
provides integral shielding which minimizes interlead capacitance and coupling
to adjacent circuit components. For curves of typical collector characteristics
and for video-amplifier circuit, refer to type 2N384. JEDEC No. TO-44 package;
outline 16, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —40 max volts
Collector-to-Emitter Voltage (with base-to-emitter volts = 0.5) —40 max volts
Emitter-to-Base Voltage (with collector open) —0.5 max volt
Collector Current —10 max ma
Emitter Current 10 max ma
Transistor Dissipation:
At ambient temperatures up to 25°C 120 max mw
At ambient temperatures above 25°C See curve page 80
At case temperatures up to 25°C (with heat sink) 240 max mw
At case temperatures above 25°C See curve page 80
Temperature Range:
Operating and storage —65 to 100 *C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector ¡ta = —50
and emitter current = 0) —80 volts
Collector-to-Emitter Reach-Through Voltage
(with emitter-to-base volts = —0.5) —80 volts
Collector-Cutoff Current (with collector-to-base volts = —12
and emitter current = 0) —4 ga
Emitter-Cutoff Current (with emitter-to-base volts = —0.5
and collector current — 0) —1 ¡ta
Thermal Resistance:
Junction-to-case 0.31 max °C/mw
Junction-to-ambient 0.62 max °C/mw
In Common-Base Circuit
In Common-Emitter Circuit
POWER TRANSISTOR
Germanium p-n-p type used in
a wide variety of switching and am-
2N277 plifier applications in industrial and
military equipment requiring tran-
sistors having high voltage, current,
B
and dissipation values. It is used in
power-switching, voltage- and current-regulating, dc-to-dc converter, inverter,
power-supply and relay- and solenoid-actuating circuits; and in low-frequency
oscillator and audio-amplifier service. This type is designed to provide satisfac-
tory performance under extreme environmental conditions of temperature,
moisture, and altitude; it is stud-mounted to provide positive heat-sink contact,
and has a cold-weld seal to insure reliable performance under severe environ-
mental conditions. JEDEC No. TO-36 package; outline 14, Outlines Section.
This type is identical with type 2N173 except for the following items:
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter-to-base volts = —1.5) —40 max volts
Emitter-to-Base Voltage (with collector open) —20 max volts
CHARACTERISTICS
Collector-to-Emitter Breakdown Voltage:
With base short-circuited to emitter and collector amperes
= —0.3 —40 min volts
With base open and collector amperes = —0.3 —40 volts
With base open and collector amperes = —1 —25 mm volts
Emitter-to-Base Voltage (with collector-to-base volts = —40
and emitter current — 0) —1 max volt
Collector-to-Emitter Reach-Through Voltage —40 min volts
Emitter-Cutoff Current (with emitter-to-base volts = —20
and collector current = 0) —1 ma
Collector-Cutoff Current (with collector-to-base volts = —40
and emitter current — 0) —2 ma
—800
600
—500
—400
—300
—200
—150
...1 00
-----r . ...5 0
BASE MILLIAMPERE S
—NO
0
.----
--/...;
0 —5 —10 —15 —20 —25 —30 —35 —40
COLLECTOR—TO—EMITTER VOLTS 52CM — 07251
Technical Data 141
POWER TRANSISTOR
Germanium p-n-p type used in
a wide variety of switching and am-
plifier applications in industrial and
military equipment requiring tran- 2N278
sistors having high voltage, current,
and dissipation values. It is used in
power-switching, voltage- and current-regulating, dc-to-dc converter, inverter,
power-supply, and relay- and solenoid-actuating circuits; and in low-frequency
oscillator and audio-amplifier service. This type is designed to provide satisfac-
tory performance under extreme environmental conditions of temperature,
moisture, and altitude; it is stud-mounted to provide positive heat-sink contact,
and has a cold-weld seal to insure reliable performance under severe environ-
mental conditions. JEDEC No. TO-36 package; outline 14, Outlines Section.
This type is identical with type 2N173 except for the following items:
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter-to-base volts = —1.5) —50 max volts
Emitter-to-Base Voltage (with collector open) —30 max volts
TYPE 2N278
COMMON- EMITTER CIRCUIT, BASE INPUT.
- CASE TEMPERATURE •25 °C
-9001
- -700
-60 0
-500
-400
-300
-zoo
.450
-10 0
BASE MILLIAMPERES-
_
..................e...4.„ o
CHARACTERISTICS
Collector-to-Emitter Breakdown Voltage:
With base short-circuited to the emitter and collector amperes
= —0.3
With base open and collector amperes = —0.3 —45
—45 min volts
volts
With base open and collector amperes — —1 —30 min volts
Emitter-to-Base Voltage (with collector-to-base volts = —50
and emitter current — 0) —1 max volt
Collector-to-Emitter Reach-Through Voltage —50 min volts
Emitter-Cutoff Current (with emitter-to-base volts = —30
and collector current — 0) —1 ma
Collector-Cutoff Current (with collector-to-base volts = —50
and emitter current — 0) —2 ma
POWER TRANSISTOR
Germanium p-n-p type used in
large-signal audio-frequency ampli-
2N307 fier applications such as class A and
class B audio-frequency amplifiers,
class A driver amplifiers, low-fre-
quency oscillators, converters, in-
verters, power supplies, light flashers, and communications systems. Package
is similar to JEDEC No. TO-3; outline 26, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —35 max volts
Collector-to-Emitter Voltage —35 max volts
Collector Current —1 max ma
Emitter Current 1max ma
Transistor Dissipation:
At mounting-Range temperatures up to 25°C 10 max watts
At mounting-flange temperatures above 25°C See curve page 80
Mounting-Flange Temperature Range:
Operating and storage —65 to 75 *C
CHARACTERISTICS
Collector-to-Emitter Saturation Voltage (with collector ma
= —200 and base ma = —20) —1 max volt
Collector-Cutoff Current (with collector-to-emitter volts = —35
and external base-emitter resistance = 30 ohms) —15 max ma
Thermal Resistance:
Junction-to-mounting flange 5 °C/watt
In Common-Emitter Circuit
POWER TRANSISTOR
Germanium p-n-p type used in
large-signal audio-frequency ampli-
2N351 fier applications. It is used primarily
in class A power-output stages and
class B push-pull amplifier stages
in automobile radio receivers. Pack-
age is similar to JEDEC No. TO-3; outline 23, Outlines Section. This type is
identical with type 2N176 except for the following items:
CHARACTERISTICS
In Common-Emitter Circuit
TRANSISTOR
Germanium p-n-p type used as
an amplifier in AM broadcast-band
battery-operated portable radio re-
ceivers and short-wave receivers. 2N370
JEDEC No. TO-7 package; outline
7, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —20 max volts
Emitter-to-Base Voltage (with collector open) —1.5 max volts
Collector Current —10 max ma
Emitter Current 10 max ma
Collector Dissipation:
At ambient temperatures up to 25°C 80 max mw
At ambient temperature of 55°C 40 max mw
At ambient temperature of 71°C 20 max mw
Ambient-Temperature Range:
Operating —65 to 71 °C
Storage —65 to 85 0C
CHARACTERISTICS
Collector-Cutoff Current (with collector-to-base volts = —12
and emitter current — 0) —20 max pa
Emitter-Cutoff Current (with emitter-to-base volts = —1.5
and collector current — 0) —50 max ea
In Common-Base Circuit
In Common-Emitter Circuit
TYPICAL OPERATION
Frequency 1.5 10 20 Mc
DC Collector-to-Emitter Voltage —12 —12 —12 volts
DC Collector Current 1 1 1 ma
Input Resistance 1750 200 100 ohms
Output Resistance 180000 18000 11000 ohms
Maximum Power Gam 50.5 26.2 17 db
Maximum Useful Power Gain in an
unneutralized circuit 31 17.6 125 db
Intrinsic Transconductance 37800 21400 13700 µ mh os
Collector Transition Capacitance 1.7 1.7 1.7 Pf
144 RCA Transistor Manual
-40
30
BAseACROA-te .-
,''-"------------ 10
0.5
TRANSISTOR
Germanium p-n-p type used as
a radio-frequency oscillator in AM
21\1371 broadcast -band battery -operated
portable radio receivers and short-
wave receivers. JEDEC No. TO-7
E IS
package; outline 7, Outlines Section.
Ratings and characteristics for this type are the same as for type 2N370 except
for the following items:
MAXIMUM RATINGS
Emitter-to-Base Voltage (with collector open) —0.5 max volt
CHARACTERISTICS
Emitter-Cutoff Current (with emitter-to-base volts = —0.5
and collector current = 0) —50 max pa
TRANSISTOR
Germanium p-n-p type used as
a radio-frequency mixer in AM
2N372 broadcast -band battery -operated
portable radio receivers and short-
wave receivers. JEDEC No. TO-7
package; outline 7, Outlines Section. E B IS C
This type is electrically identical with type 2N370 except for the following items:
MAXIMUM RATINGS
Emitter-to-Base Voltage (with collector open) —0.5 max volt
CHARACTERISTICS
Emitter-Cutoff Current (with emitter-to-base volts = —0.5 —50 pa
and collector current — 0)
POWER TRANSISTOR
Germanium p-n-p type used in
large-signal audio-frequency ampli-
fier applications. It is used primarily 2N376
in class A power-output stages and
class B push-pull amplifier stages of
automobile radio receivers. Package
is similar to JEDEC No. TO-3; outline 23, Outlines Section. This type is iden-
tical with type 2N176 except for the following items:
CHARACTERISTICS
In Common-Emitter Circuit
TRANSISTOR
IS Germanium p-n-p type used in
rf- and if-amplifier circuits; oscilla-
and
tor, mixer,
low-level
andvideo-amplifier
converter circuits;
cir- 2N384
C cuits in industrial and military
equipment. It is used in the design
of rf circuits having high input-circuit efficiency, excellent operating stability,
good automatic-gain-control capabilities over a wide range of input-signal
levels, and good signal-to-noise ratio. The drift-field construction provides low
base resistance and collector-transition capacitance, and improves performance
at higher frequencies. The center lead internally connected to the metal case
provides integral shielding which minimizes interlead capacitance and coupling
to adjacent circuit components. JEDEC No. TO-44 package; outline 16, Out-
lines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —40 max volts
Collector-to-Emitter Voltage (with base-to-emitter volts = 0.5) —40 max volts
Emitter-to-Base Voltage (with collector open) —0.5 max volt
Collector Current —10 max ma
Emitter Current 10 max ma
Transistor Dissipation:
At case temperatures up to 25°C 240 max mw
At case temperatures above 25°C See curve page 80
At ambient temperatures up to 25°C 120 max mw
At ambient temperatures above 25°C See curve page 80
Ambient-Temperature Range:
Operating (junction) and storage —65 to 100 0C
146 RCA Transistor Manual
CHARACTERISTICS
In Common-Base Circuit
In Common-Emitter Circuit
.. _ CTOR CHARACTERISTICS
TYPE 2N 384
COMMON -EMITTER CIRCUIT, BASE INPUT.
-35 -AMBIENT TEMPERATURE • 25•C -50
-40
-30
20
MICROAMPERES.
--USE
-10
0.
O -2 -4 -6 -8 - - -1114 -lO
COLLECTOR-TO -EMITTER VOLTS szcat-9410T
Technical Data 147
-28 VOLTS DC
R3
C4
92CS-10394RI
TRANSISTOR
Germanium n-p-n types used in
medium-speed switching applica-
tions in data-processing equipment.
2N388
JEDEC No. TO-5 package; outline
6, Outlines Section.
2N388A
MAXIMUM RATINGS
2N388 2N388A
Collector-to-Base Voltage (with emitter open) 25 max 40 max volts
Collector-to-Emitter Voltage:
With external base-to-emitter resistance
= 10000 ohms 20 max 20 max volts
With base-to-emitter volts = —0.5 — 40 max volts
Emitter-to-Base Voltage (with collector open) 15 max 15 max volts
Collector Current 200 max 200 max ma
Transistor Dissipation:
At ambient temperatures up to 25°C 150 max 150 max mw
At ambient temperatures above 25°C See curve page 80
Ambient-Temperature Range:
(Operating and storage) —65 to 100 —65 to 100 •C
Lead Temperature (for 10 seconds maximum) 235 max 235 max °C
CHARACTERISTICS
2N388 2N388A
Base-to-Emitter Voltage:
With collector ma = 200 and base ma = 10 1.5 max 1.5 max volts
With collector ma = 100 and base ma = 4 0.8 max 0.8 max volt
Collector-Cutoff Current:
With collector-to-base volts = 40 and emitter
current = 0 — 40 max ¡sa
With collector-to-base volts = 25 and emitter
current — 0 10 max 10 max Pa
With collector-to-base volts = 1 and emitter
current — 0 5max 5max ¡sa
148 RCA Transistor Manual
In Common-Emitter Circuit
In Common-Base Circuit
TRANSISTOR
Germanium p-n-p type used in
medium-speed switching applica-
2N395 tions in data-processing equipment.
JEDEC No. TO-5 package; outline
6, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —30 max volts
Collector-to-Emitter Voltage (with external base-to-emitter
resistance = 10000 ohms) —15 max volts
Emitter-to-Base Voltage (with collector open) —20 max volts
Collector Current —200 max ma
Transistor Dissipation:
At ambient temperatures up to 25°C 150 max mw
At ambient temperatures above 25 0C See curve page 80
Ambient-Temperature Range:
Operating —65 to 85 OC
Storage —65 to 100 °C
Lead Temperature (for 10 seconds maximum) 230 max 0C
CHARACTERISTICS
Collector-to-Emitter Saturation Voltage (with collector
ma = 50 and base ma = —5) —0.2 max volt
Collector-Cutoff Current (with collector-to-base
volts = —15 and emitter current — 0) —6 max ma
In Common-Base Circuit
In Common-Emitter Circuit
TRANSISTOR
Germanium p-n-p types used in
2N396 medium-speed switching applica-
tions in data-processing equipment.
2N396A JEDEC No. TO-5 package; outline
6, Outlines Section. Ratings for these
types are the same as for type 2N395
except for the following items:
MAXIMUM RATINGS
2N396 2N396A
Collector-to-Emitter Voltage:
With base open — —20 max volts
With external base-to-emitter resistance
= 10000 ohms —20 max — volts
Transistor Dissipation:
At ambient temperatures up to 25°C 150 max 200 max caw
Technical Data 149
CHARACTERISTICS
Collector-to-Emitter Saturation Voltage (with collector ma
-- —50 and base ma = —3.3) —0.2 max volt
Collector-Cutoff Current (with collector-to-base volts = —20
and emitter current — 0) —6 max ria
In Common-Bose Circuit
In Common-Emitter Circuit
TRANSISTOR
Germanium p-n-p type used in
medium-speed switching applica-
tions in data-processing equipment.
JEDEC No. TO-5 package; outline 2N397
6, Outlines Section. This type is
identical with type 2N395 except for
the following items:
CHARACTERISTICS
'Collector-to-Emitter Saturation Voltage
(with collector ma = —50 and base ma = —2.5) —02 max volt
In Common-Bose Circuit
TRANSISTOR
Germanium p-n-p types used for
direct high-voltage control of "on- 2N398
e off" devices such as neon indicators,
relays, incandescent-lamp indica- 2N398A
tors, and indicating counters of elec-
tronic computers. JEDEC No. TO-5 2N398B
package; outline 6, Outlines Section.
MAXIMUM RATINGS
2N398 2N398A 2N398B
Collector-to-Base Voltage
(with emitter open) —105 max —105 max —105 max volts
Collector-to-Emitter Voltage
(with emitter-to-base volts = —1) —105 max —105 max —105 max volts
Emitter-to-Base Voltage
(with collector open) —50 max —50 max —75 max volts
Collector Current —100 max —200 max —200 max ma
Emitter Current 100 max 200 max 200 max ma
Transistor Dissipation:
At ambient temperatures up to
25°C 50 max 150 max 250 max mw
At ambient temperatures above
25°C See curve page 80
Ambient-Temperature Range:
Operating —65 to 55 —65 to 100 —65 to 100 °C
Storage —65 to 85 —65 to 100 —65 to 100 °C
Lead Temperature
150 RCA Transistor Manual
CHARACTERISTICS
Base-to-Emitter Saturation Voltage
(with collector ma = —5 and
base ma = —0.25) —0.4 max —0.4 max —0.3 max volt
Collector-to-Emitter Saturation
Voltage (with collector ma = —5
and base ma = —0.25) —0.35 max —0.35 max —0.25 max volt
Collector-Cutoff Current:
With collector-to-base volts = —2.5
and emitter current — 0 —14 max —14 max —6 max ga
With collector-to-base volts
= —105 and emitter current
— 0 —50 max —50 max —25 max ria
In Common-Base Circuit
Small-Signal Forward-Current-
Transfer-Ratio Cutoff Frequency
(with collector-to-base volts =
—6 and emitter ma — 1) 1mln Mc
In Common-Emitter Circuit
TRANSISTOR
Germanium p-n-p types used in
2N404 medium-speed switching applica-
tions in data-processing equipment. E
2N404A These types also have wide applica-
tion in other low-level, medium-
speed "on-off" control circuits.
JEDEC No TO-5 package; outline 6, Outlines Section.
MAXIMUM RATINGS
2N404 2N404A
Collector-to-Base Voltage (with emitter open) —25 max —40 max volts
Collector-to-Emitter Voltage
(with emitter-to-base volts = —1) —24 max —35 max volts
Emitter-to-Base Voltage (with collector open) —12 max —25 max volts
Collector Current —100 max —150 max ma
Emitter Current 100 max 150 max ma
Transistor Dissipation:
At ambient temperatures up to 25°C 150 max 150 max raw
At ambient temperatures above 25°C See curve page 80
Ambient-Temperature Range:
Operating —65 to 85 —65 to 100 oC
Storage —65 to 100 —65 to 100 OC
Lead Temperature (for 10 seconds maximum) 255 max 255 max oC
CHARACTERISTICS
Collector-to-Emitter Saturation Voltage:
With collector ma = —12 and base ma = —0.4 —0.15 max volt
With collector ma = —24 and base ma = —1 —0.2 max volt
Base-to-Emitter Saturation Voltage:
With collector ma = —12 and base ma = —0.4 —0.35 max volt
With collector ma = —24 and base ma = —1 —0.40 max volt
Collector-Cutoff Current (with collector-to-base volts = —12
and emitter current — 0) —5 max ga
Stored Base charge (with collector ma = —10 and base ma = —1) —1400 max pcoul
In Common-Base Circuit
In Common-Emitter Circuit
TRANSISTOR
Germanium p-n-p type used in
low-power class A audio-frequency
driver-amplifier applications in bat-
tery-operated portable radio-receiv- 2N405
c ers. JEDEC No. TO-40 package;
outline 15, Outlines Section. This
type is electrically identical with type 2N406.
TRANSISTOR
Germanium p-n-p type used in
class A audio-frequency driver-am-
plifier applications in battery-
operated portable radio receivers. 2N406
E JEDEC No. TO-1 package; outline
4, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —20 max volts
Collector-to-Emitter Voltage —18 max volts
Emitter-to-Base Voltage (with collector open) —2.5 max volts
Collector Current —35 max ma
Emitter Current 35 max ma
Collector Dissipation:
At ambient temperatures up to 25°C 150 max mw
At ambient temperature of 55°C 50 max mw
At ambient temperature of 71°C 20 max mw
Ambient Temperature:
Operating —65 to 71 •C
Storage 65 to 85 •C
-40
BASE MICROAMPERES'
- 20
-10
-2 -4 -6 -8
COLLECTOR-TO-EMITTER VOLTS 92C0 —946471
CHARACTERISTICS
Collector-Cutoff Current (with collector-to-base volts = —12
and emitter current = 0) —14 max µa
Emitter-Cutoff Current (with emitter-to-base volts = —2.5
and collector current = 0) —14 max µa
152 RCA Transistor Manual
In Common-Bose Circuit
Small-Signal Forward-Current-Transfer-Ratio Cutoff Frequency
(with collector-to-base volts = —6 and collector ma = —1) C.O lte
In Common-Emitter Circuit
DC Collector-to-Emitter Voltage —6 volts
DC Collector Current —1 ma
Power Gain (with load resistance of 8500 ohms and input
resistance of 750 ohms) 43 db
TRANSISTOR
Germanium p-n-p type used in
class A output stages and class B
2N407 push-pull output stages of battery-
operated portable radio receivers and
audio amplifiers. JEDEC No. TO-40
package; outline 15, Outlines Section.
This type is electrically identical with type 2N408.
TRANSISTOR
Germanium p-n-p type used in
class A output stages and class B
2N408 push-pull output stages of battery-
operated portable radio receivers and
audio amplifiers. JEDEC No. TO-1 E
package; outline 4, Outlines Section.
For curves of collector characteristics and transfer characteristics, refer to
type 2N109.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —20 max volts
Collector-to-Emitter Voltage —18 max volts
Emitter-to-Base Voltage (with collector open) —2.5 max volts
Collector Current —70 max ma
Emitter Current 70 max ma
Collector Dissipation:
At ambient temperatures up to 25°C 150 max mw
At ambient temperature of sec 50 max mw
At ambient temperature of 71°C 20 max mw
Ambient-Temperature Range:
Operating —65 to 71 °C
Storage —65 to 85 °C
CHARACTERISTICS
Collector-Cutoff Current (with collector-to-base volts = —12
and emitter current = 0) • —14 max µa
Emitter-Cutoff Current (with emitter-to-base volts = —1.5
and collector current — 0) —14 max pa
In Common-Emitter Circuit
DC Forward Current-Transfer Ratio (with collector-to-emitter
volts = —1 and collector ma = —50) 75
TRANSISTOR
TRANSISTOR
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —13 max volts
Emitter-to-Base Voltage (with collector open) —0.5 max volt
Collector Current —15 max ma
Emitter Current 15 max ma
Collector Dissipation:
At ambient temperatures up to 25°C 80 max mw
At ambient temperature of 55°C 35 max mw
At ambient temperature of 71°C 10 max mw
Ambient-Temperature Range:
Operating —65 to 71 °C
Storage —65 to 85 °C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage
(with collector µa . —10 and emitter current — 0) —13 min volts
Collector-Cutoff Current (with collector-to-base volts = —13
and emitter current = 0) —10 max pa
Emitter-Cutoff Current (with emitter-to-base volts = —0.5
and collector current — 0) —12 max pa
In Common-Base Circuit
In Common-Emitter Circuit
TRANSISTOR
Germanium p-n-p type used in
converter and mixer-oscillator ap-
2N411 plications in battery-operated port-
able radio receivers. JEDEC No.
TO-40 package; outline 15, Outlines
Section. This type is electrically
identical with type 2N412.
TRANSISTOR
Germanium p-n-p type used in
converter and mixer-oscillator ap-
2N4,12 plications in battery-operated port-
able radio receivers. JEDEC No.
TO-1 package; outline 4, Outlines
Section. For curves of collector char-
acteristics, refer to type 2N139.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —13 max volts
Emitter-to-Base Voltage (with collector open) —0.5 max volt
Collector Current —15 max ma
Emitter Current 15 max ma
Collector Dissipation:
At ambient temperatures up to 25°C 80 max mw
At ambient temperature of 55°C 35 max mw
At ambient temperature of 71°C 10 max mw
Ambient-Temperature Range:
Operating —65 to 71 °C
Storage —65 to 85 •C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage
(with collector µa = —10 and emitter current — 0) —13 min volts
Collector-Cutoff Current (with collector-to-base volts = —13
and emitter current — 0) —10 max µa
Emitter-Cutoff Current (with emitter-to-base volts = —0.5
and collector current — 0) —12 max iia
In Common-Emitter Circuit
TRANSISTOR
Germanium p-n-p type used in
medium-speed switching applica-
2N414 tions in data-processing equipment.
JEDEC No. TO-5; outline 6, Outlines
Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —30 max volts
Collector-to-Emitter Voltage:
—15 max volts
With base open
With base-to-emitter volts — 1 —20 max volts
Technical Data 155
CHARACTERISTICS
Collector-Cutoff Current (with collector-to-base volts = —12
and emitter current — 0) — 5 max Pa
In Common-Base Circuit
In Common-Emitter Circuit
POWER TRANSISTOR
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter-to-base volts = —1.5) —40 max volts
Emitter-to-Base Voltage (with collector open) —20 max volts
Collector Current —15 max amperes
Emitter Current 15 max amperes
Base Current —4 max amperes
Transistor Dissipation:
At case temperatures up to 25°C 150 max watts
At case temperatures above 25°C See curve page 80
Case-Temperature Range:
Operating and storage —65 to 100
CHARACTERISTICS
Collector-to-Emitter Breakdown Voltage:
With base short-circuited to emitter and collector amperes
= —0.3 —40 min volts
With base open and collector amperes = —0.3 —40 volts
Base-to-Emitter Voltage (with collector-to-emitter volts = —2
and collector amperes = —5) —0.65 volt
Emitter-to-Base Voltage (with collector-to-base volts = —40
and emitter current — 0) —1 max volt
Collector-to-Emitter Saturation Voltage (with collector amperes
= —12 and base amperes = —2) —03 volt
Collector-to-Emitter Reach-Through Voltage —40 min volts
156 RCA Transistor Manual
In Common-Emitter Circuit
á -10
. e.,
o
t
•
,
•
Ne‘
o t
25 ...... 0
.
i
0 -0.2 -0.4 -0.6 -. O -0.2 -0.4 -0.6 -0.8
BASE-TO-EMITTER VOLTS BASE AMPERES
92LS-107201 92U-10721T
TOR CHARACTERISTICS
11 IIL 1111
TYPE 2N44I
COMMON-EMITTER CIRCUIT, BASE INPUT.
CASE TEMPERATURE.25 C
•20
120 0
000
-800
-600
-5oo
_400
-300
o
, ‘0 o
1 t I
BASE MI LLIAM PERES= -5°
__ -- ..,..
O -5 -10 -15 -J
COLLECTOR-TO-EMITTER VOLTS 92Cm-107321
Technical Data 157
POWER TRANSISTOR
Germanium p-n-p type used in
a wide variety of switching and am-
plifier applications in industrial and 2N442
military equipment requiring tran-
sistors having high voltage, current,
e and dissipation values. It is used in
power-supply, voltage- and current-regulating, dc-to-dc converter, inverter,
power-supply, and relay- and solenoid-actuating circuits; and in low-frequency
oscillator and audio-amplifier service. This type is designed to provide satis-
factory performance under extreme environmental conditions of temperature,
moisture, and altitude; it is stud-mounted to provide positive heat-sink contact,
and has a cold-weld seal to insure reliable performance under severe environ-
mental conditions. JEDEC No. TO-36 package; outline 14, Outlines Section.
This type is identical with type 2N441 except for the following items:
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter-to-base volts = —1.5) —50 max volts
Emitter-to-Base Voltage (with collector open) —30 max volts
CHARACTERISTICS
Collector-to-Emitter Breakdown Voltage:
With base short-circuited to the emitter and collector amperes
= —0.3 —45 min volts
With base open and collector amperes = —0.3 —45 volts
Emitter-to-Base Voltage (with collector-to-base volts = —50
and emitter current = 0) —1 max volt
Collector-to-Emitter Reach-Through Voltage —50 min volts
Emitter-Cutoff Current (with emitter-to-base volts = —30
and collector current = 0) —1 ma
Collector-Cutoff Current (with collector-to-base volts = —40
and emitter current = 0) —2 ma
••15 ..V20°
-ROO—.
r
-9 ----
-300
-400
-300
-200
5
-100
POWER TRANSISTOR
Germanium p-n-p type used in
a wide variety of switching and am-
plifier applications in industrial and 2N443
military equipment requiring tran-
sistors having high voltage, current,
• and dissipation values. It is used in
power-switching, voltage- and current-regulating, dc-to-dc converter, inverter,
158 RCA Transistor Manual
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter-to-base volts = —1.5) —60 max volts
Emitter-to-Base Voltage (with collector open) —40 max volts
CHARACTERISTICS
Collector-to-Emitter Breakdown Voltage:
With base short-circuited to the emitter and collector amperes
= —0.3 —50 min volts
With base open and collector amperes = —0.3
Emitter-to-Base Voltage (with collector-to-base volts = —60 —55 volts
and emitter current — 0) —1 max volt
Collector-to-Emitter Reach-Through Voltage —60 min volts
Emitter-Cutoff Current (with emitter-to-base volts = —40
and collector current =_ 0) —1 ma
Collector-Cutoff Current (with collector-to-base volts .= —60
and emitter current — 0) —2 ma
--- -1200
-1000
-BOO
-600
24o0
-300
-200
........................." -100
'5°
BASE MILLIAMPER e•-•
0
)
O -10 -20 -30 -40 -50
COLLECTOR-TO-EMITTER VOLTS $204-10729r
TRANSISTOR
Germanium p-n-p type used in
medium-speed switching applica-
tions in data-processing equipment.
JEDEC No. TO-5 package; outline 2N581
6, Outlines Section. This type is
identical with type 2N404 except for
the following items:
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —18 max volts
Collector-to-Emitter Voltage (with emitter-to-base volts = —1) —15 max volts
Emitter-to-Base Voltage (with collector open) —10 max volts
CHARACTERISTICS
Collector-to-Emitter Saturation Voltage
(with collector ma = —20 and base ma = —1) —0.3 volt
Base-to-Emitter Saturation Voltage
(with collector ma = —20 and base ma = —1) —0.5 max volt
Collector-Cutoff Current (with collector-to-base volts = —12
and emitter current — 0) —10 max pa
Stored Base Charge (with collector ma —20 and base ma = —2) 2400 max pcoul
In Common-Emitter Circuit
TRANSISTOR
Germanium p-n-p type used in
medium-speed switching applica-
tions in data-processing equipment.
JEDEC No. TO-5 package; outline 2N582
6, Outlines Section. This type is
identical with type 2N404 except for
the following items:
MAXIMUM RATINGS
Collector-to-Emitter Voltage (with emitter-to-base volts = —1) —14 max volts
CHARACTERISTICS
Collector-to-Emitter Saturation Voltage:
With collector ma = —24 and base ma = —0.6 —0.2 max volt
With collector ma = —100 and base ma — —5 —0.3 max volt
Base-to-Emitter Saturation Voltage:
With collector ma = —24 and base ma = —0.6 —0.4 max volt
With collector ma = —100 and base ma — —5 —0.8 max volt
Stored Base Charge
(with collector ma = —24 and base ma = —1.2) 1200 max pcoul
In Common-Base Circuit
In Common-Emitter Circuit
TRANSISTOR
Germanium n-p-n type used in
switching circuits of compact,
2N585 medium-speed electronic computers.
JEDEC No. TO-5 package; outline
6, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 25 max volts
Collector-to-Emitter Voltage:
With base open 15 max volts
With base-to-emitter volts — —1 24 max volts
Emitter-to-Base Voltage (with collector open) 20 max volts
Collector Current 200 max ma
Transistor Dissipation:
At ambient temperatures up to 25°C 120 max mw
At ambient temperature of 55°C 35 max mw
At ambient temperature of 71°C 10 max mw
Ambient-Temperature Range:
Operating —65 to 71 °C
Storage —65 to 85 °C
CHARACTERISTICS
Collector-to-Emitter Saturation Voltage
(with collector ma = 20 and base ma — 1) 0.2 max volt
Base-to-Emitter Saturation Voltage
(with collector ma = 20 and base ma — 1) 0.45 max volt
Collector-Cutoff Current:
With collector-to-base volts = 0.25 and emitter current = O 6max µa
With collector-to-base volts = 12 and emitter current = 8max pa
Stored Base Charge (with collector ma = 20 and base ma .= 2) 3000 max pcoul
In Common-Base Circuit
In Common-Emitter Circuit
TRANSISTOR
Germanium p-n-p type used in
low-speed switching applications in
2N586 industrial and military equipment.
It is used as a relay-actuating de-
vice and in voltage-regulator, multi-
vibrator, dc-to-dc converter, and E
power-supply circuits. It can also be used in audio-frequency service as an
Technical Data 161
e
2 200
-J 200
3
-1
150
o - 150
o
100 I-.
_o w - 100
o 50 _o
o
50
-2 -3 -4
BASE MILLIAMPERES
92CS-100181 0 -0.2 -0.4 -0.6 - 0.0
BASE-TO-EMITTER VOLTS
92CS-100791
150 •.2
100
-
50 5
sisroa
BASE MILLIAMPER0.25 DIÈSIPATION (MILLIW TTS •250
TRANSISTOR
Germanium p-n-p type used in
large-signal audio-frequency driver-
21\1591 amplifier applications. It is used pri-
marily in high-gain class A audio-
driver stages in automobile radio
receivers. JEDEC No. TO-1 package;
outline 4, Outlines Section.
MAXIMUM RATINGS
Collector-to-Emitter Voltage —32 max volts
Collector Current:
Peak —40 max ma
DC —20 max ma
Emitter Current:
Peak 40 max ma
DC 20 miuc ma
With heat Without
Collector Dissipation: Sink heat sink
At ambient temperatures up to 55°C 100 50 mw
At ambient temperature of 71°C 40 20 row
Ambient-Temperature Range:
Operating 71 max °C
Storage —65 to 85 'C
CHARACTERISTICS
Collector-to-Emitter Breakdown Voltage (with collector ma =
—0.3. base resistance = 4700 ohms, and emitter resistance
= 500 ohms) —32 min volts
Collector-Cutoff Current (with collector-to-base volts = —10
and emitter current — 0) —7 max oa
Emitter-Cutoff Current (with emitter-to-base volts = —1
and collector current — 0) —20 max na
Thermal Resistance:
Junction-to-ambient 0.34 °C/mw
Junction-to-heat sink 0.15 °C/mw
In Common-Emitter Circuit
TRANSISTOR
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 25 max volts
Collector-to-Emitter Voltage 25 max volts
Emitter-to-Base Voltage (with collector open) 12 max volts
Collector Current:
Peak 100 max 11la
DC 50 max Ma
Emitter Current:
Peak —100 max T118
DC —50 max Illa
Collector Dissipation:
At ambient temperatures up to 25°C 100 max mw
At ambient temperature of 55°C 50 max mw
At ambient temperature of 71°C 20 max DM
Ambient Temperature:
Operating
Storage
—65 to 71
—65 to 85
:S
CHARACTERISTICS
Collector-Cutoff Current (with collector-to-base volts = 25
and emitter current — 0) 14 max jis
Emitter-Cutoff Current (with emitter-to-base volts = 12
and collector current — 0) 14 max jia
In Common-Emitter Circuit
os
os
01
os
os
o.4
•
0.3
0
plow MILLIAMPERES•04
4 6 e o 12 14 is
COLLECTOR-TO-MTTER VOLTS 92CM-9044T
TRANSISTOR
Germanium n-p-n type used in
large-signal audio-frequency ampli-
2N649 fier applications. It is designed es-
pecially for use with its p-n-p
counterpart, RCA-2N408, in rises B
complementary-symmetry power-
output stages of compact, transformerless, battery-operated portable radio re-
ceivers, phonographs, and audio amplifiers operating at battery-supply voltages
up to 9volts. This type can also be used in conventional class B push-pull and
class A audio-amplifier circuits. JEDEC No. TO-1 package; outline 4, Outlines
Section. This type is identical with type 2N647 except for the following items:
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 20 max volts
Collector-to-Emitter Voltage (with base open) 18 max volts
Emitter-to-Base Voltage (with collector open) 2.5 max volts
CHARACTERISTICS
Collector-Cutoff Current (with collector-to-base volts = 12
and emitter current — 0) 14 max ma
Emitter-Cutoff Current (with emitter-to-base volts = 2.5 and
collector current — 0) 14 max Pa
In Common-Emitter Circuit
MAXIMUM RATINGS
For sinusoidal ac supply voltage of 50 to
400 cps, with resistive or inductive load
CHARACTERISTICS
Forward Breakover Voltage (at case temperature of 125°C) 25 min volts
Forward Voltage Drop (at case temperature of 65°C) 0.86 max volt
DC Gate-Trigger Voltage:
At case temperature of —65°C 3max volts
At case temperature of 125°C 0.25 min volt
Average Blocking Current (at case temperature of 125°C):
Forward 6.5 max ma
Reverse 6.5 max ma
DC Gate-Trigger Current (at case temperature of 125°C) 25 max Ma
Holding Current (at case temperature of 125°C) 5 ma
Thermal Resistance (junction-to-case) 2max °C/watt
15 .SINGLE-PHASE OPERATKIN o-
CONDUCTION ANGLE •180
er,,)
cr c,
HEAT SINK :1/1e-THICK
125
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AMBIENT TEMPERATURE—% INSTANTANEOUS FORWARD VOLTAGE DROP—VOLTS
92CS-1191611 92CS-1t917T
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- -25 0 25 50 75 100 125 ..-75 -50 -25 0 25 50 75 lOO 125
CASE TEMPERATURE—'C CASE TEMPERATURE — %
92CS-I 9211E 92cS-1192211
MAXIMUM RATINGS
For sinusoidal ac supply voltage of 50 to
400 cps, with resistive or inductive Load
CHARACTERISTICS
Forward Breakover Voltage (at case temperature of 125°C) 50 min volts
Technical Data 167
MAXIMUM RATINGS
For sinusoidal ac supply voltage of 50 to
400 cps, with resistive or inductive Load
CHARACTERISTICS
Voltage (at
Forward Breakover rase temperature of 125 °C) 100 min volts
control
cations and
in industrial
power switching
and military
appli- 2N684
equipment. This type has a maxi-
(STUD)
mum peak forward blocking voltage
of 150 volts and a forward-current capability of 16 amperes (average value)
or 25 amperes (rrns value). This type is designed to meet stringent military
environmental and mechanical specifications. The special high-strength copper-
alloy stud can withstand an installing torque up to 50 inch-pounds. JEDEC
No. TO-48 package; outline 19, Outlines Section. This type is identical with
type 2N681 except for the following items:
MAXIMUM RATINGS
For sinusoidal ac supply voltage of 50 to
400 cps, with resistive or inductive load
Peak Reverse Voltage:
Repetitive 150 max volts
Non-repetitive (transient) 225 max volts
Peak Forward Blocking Voltage (repetitive) 150 max volts
CHARACTERISTICS
Forward Breakover Voltage (at case temperature of 125'C) 150 min volts
168 RCA Transistor Manual
MAXIMUM RATINGS
For sinusoidal ac supply voltage of 50 to
400 cps, with resistive or inductive load
CHARACTERISTICS
Forward Breakover Voltage (at case temperature of 125°C) 200 min volts
Average Blocking Current (at case temperature of 125°C):
Forward 6max ma
Reverse 6 max ma
MAXIMUM RATINGS
For sinusoidal ac supply voltage of 50 to
400 cps, with resistive or inductive load
CHARACTERISTICS
Forward Breakover Voltage (at case temperature of 125°C) 250 min volts
Average Blocking Current (at case temperature of 125°C) :
Forward 5.5 max ma
Reverse 5.5 max ma
Technical Data 169
MAXIMUM RATINGS
For sinusoidal ac supply voltage of 50 to
400 cps, with resistive or inductive Load
Peak Reverse Voltage:
Repetitive 300 max volts
Non-repetitive (transient) 400 max volts
Peak Forward Blocking Voltage (repetitive) 300 max volts
CHARACTERISTICS
Forward Breakover Voltage (at case temperature of 125°C) 300 min volts
Average Blocking Current (at case temperature of 125°C):
Forward 5max ma
Reverse 5max ma
.raeaL,
Diffused-junction n-p-n-p type
used in a wide variety of power-
control and power switching appli- 2N688
cations in industrial and military
equipment. This type has a maxi-
(eta
mum peak forward blocking voltage
of 400 volts and a forward-current capability of 16 amperes (average value)
or 25 amperes (rms value). This type is designed to meet stringent military
environmental and mechanical specifications. The special high-strength copper-
alloy stud can withstand an installing torque up to 50 inch-pounds. JEDEC
No. TO-48 package; outline 19, Outlines Section. This type is identical with
type 2N681 except for the following items:
MAXIMUM RATINGS
For sinusoidal ac supply voltage of 50 to
400 cps, with resistive or inductive load
CHARACTERISTICS
Forward Breakover Voltage (at case temperature of 125°C) 400 min volts
Average Blocking Current (at case temperature of 125°C):
Forward 4max ma
Reverse 4max ins
170 RCA Transistor Manual
lbalto
Diffused-junction n-p-n-p type
used in a wide variety of power-
2N689 control and power switching appli-
cations in industrial and military
equipment. This type has a maxi-
mum peak forward blocking voltage (sum)
of 500 volts and a forward-current capability of 16 amperes (average value)
or 25 amperes (rms value). This type is designed to meet stringent military
environmental and mechanical specifications. The special high-strength copper-
alloy stud can withstand an installing torque up to 50 inch-pounds. JEDEC
No. TO-48 package; outline 19, Outlines Section. This type is identical with
type 2N681 except for the following items:
MAXIMUM RATINGS
For sinusoidal ac supply voltage of 50 to
400 cps, with resistive or inductive load
CHARACTERISTICS
Forward Breakover Voltage (at case temperature of 125°C) 500 min volts
Average Blocking Current (at case temperature of 125°C):
Forward 3 max ma
Reverse 3 max ma
TRANSISTOR
Silicon n-p-n type used in high-
speed switching applications in data-
2N697 processing equipment. This type is
especially effective under conditions
of severe thermal and mechanical
stress and other environmental haz-
ards. JEDEC No. TO-5 package; outline 6, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 60 max volts
Collector-to-Emitter Voltage (with external base-to-emitter
resistance = 10 ohms or less) 40 max volts
Emitter-to-Base Voltage (with collector open) 5 max volts
Collector Current 500 max ma
Transistor Dissipation:
At case temperatures up to 25°C 2max watts
At ambient temperatures up to 25°C 0.6 max watt
At case or ambient temperatures above 25 °C See curve page 80
Temperature Range:
Operating (junction) and Storage —65 to 175 *C
Lead Temperature (for 10 seconds maximum) 255 max °C
CHARACTERISTICS
Base-to-Emitter Saturation Voltage (with pulsed collector ma
= 150* and base ma = 15) 1.3 max volts
Collector-to-Emitter Saturation Voltage (with pulsed collector
ma = 150* and base ma — 15) 1.5 max volts
Collector-Cutoff Current (with collector-to-base volts = 30 and
emitter current — 0) 1max pa
Technical Data 171
In Common-Bose Circuit
in Common-Emitter Circuit
TRANSISTOR
Silicon n-p-n type used in a
wide variety of small-signal and
medium-power applications in in- 2N699
dustrial and military equipment. It
can be used in rf service as an am-
plifier, mixer, oscillator, and con-
verter; in af service for small-signal and power applications; in switching
service for high-speed switching circuits. It features low saturation voltage,
high sustaining voltage, and low output capacitance. JEDEC No. TO-5 pack-
age; outline 6, Outlines Section. For curves of collector characteristics, refer
to type 2N1613.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 120 max volts
Collector-to-Emitter Voltage (with external base-to-emitter
resistance of 10 ohms or less) 80 max volts
Emitter-to-Base Voltage (with collector open) 5max volts
Transistor Dissipation:
At case temperatures up to 25°C 2max watts
At ambient temperatures up to 25°C 0.6 max watt
At case or ambient temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction)
Storage
—65 to 175
—65 to 300 :s
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector ma = 0.1
and emitter current — 0) 120 min volts
Collector-to-Emitter Sustaining Voltage (with external base-to-
emitter resistance = 10 ohms or less and collector ma = 100) 80 min volts
Base-to-Emitter Saturation Voltage (with pulsed collector ma
=150* and emitter ma — 15) 1.3 max volts
Collector-to-Emitter Saturation Voltage
(with pulsed collector ma = 150* and emitter ma — 15) 5max volts
Collector-Cutoff Current (with collector-to-base volts = 60
and emitter current — 0) 2max ma
Emitter-Cutoff Current (with emitter-to-base volts = 2
and collector current — 0) 100 max Pa
Thermal Resistance:
Junction-to-case 75 max °C/watt
Junction-to-ambient 250 max °C/watt
In Common-Base Circuit
In Common-Emitter Circuit
DC-Pulse Forward Current-Transfer Ratio (with collector-to-
emitter volts = 10 and collector ma = 150.) 40 to 120
Small-Signal Forward Current-Transfer Ratio:
With collector-to-emitter volts = 5, collector ma = 1,
and frequency = 1 kilocycle 35 to 100
With collector-to-emitter volts = 10, collector ma -= 5,
and frequency = 1 kilocycle 45 min
With collector-to-emitter volts = 10, collector ma = 50,
and frequency = 20 Mc 2.5 min
TRANSISTOR
Germanium p-n-p type used in
high-speed logic-circuit applica-
2N705 tions in data-processing equipment.
JEDEC No. TO-18 package; outline
12, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —15 max volts
Collector-to-Emitter Voltage
(with external base-to-emitter resistance = 10 ohms or less) —15 max volts
Emitter-to-Base Voltage (with collector open) —35 max volts
Collector Current —50 max ma
Emitter Current 50 max Ma
Transistor Dissipation:
At ambient temperatures up to 25°C 150 max mw
At case temperatures up to 25°C 300 max mw
At ambient or case temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) and storage —65 to 100 °C
Lead Temperature (for 10 seconds maximum) 230 max °C
CHARACTERISTICS
Base-to-Emitter Voltage (with collector ma = —10
and base ma = —0.4) —0.44 max volt
Collector-to-Emitter Saturation Voltage
(with collector ma = —10 and base ma = —0.4) —0.3 max volt
Collector-Cutoff Current (with collector-to-base volts = —5
and emitter current — 0) —3 max µa
Collector Transition Capacitance (with collector-to-base volts
= —10, emitter current = 0, and frequency = 1 Mc) 5 Pf
Emitter Transition Capacitance (with emitter-to-base volts
= —2, collector current = 0, and frequency = 1 Mc) 35 Pf
In Common-Emitter Circuit
Small-Signal Forward Current-Transfer Ratio (with collector-
to-emitter volts = —5. collector ma = —10, and frequency
= 100 Mc) 3
DC Forward Current-Transfer Ratio (with collector-to-emitter
volts =- —0.3 and collector ma = —10) 25 min
TRANSISTOR
Silicon n-p-n type used in high-
MAXIMUM RATINGS
2N706 2N706A
Collector-to-Base Voltage (with emitter open) 25 max 25 max volts
Collector-to-Emitter Voltage (with external
hasp -to-emitter resistance — 10 ohms) 20 max 20 max volts
Emitter-to-Base Voltage (with collector open) 3max 5max volts
Collector Current — 50 max ma
Transistor Dissipation:
At ambient temperatures up to 25°C 0.3 max 0.3 max watt
At ambient temperatures above 25°C See curve page 80
Al case temperatures up to 25°C 1max 1max watt
At case temperature of 100 °C 0.5 max 1max watt
Technical Data 173
Temperature Range:
Operating (junction) and storage —65 to 175 °C
CHARACTERISTICS
Base-to-Emitter Saturation Voltage
(with collector ma = 10 and base ma = 1) 0.9 max 0.9 max volt
Collector-to-Emitter Saturation Voltage
(with collector ma = 10 and base ma = 1) 0.6 max 0.6 max volt
Collector-Cutoff Current (with collector-to-lwese
volts = 15 and emitter current — 0) 0.5 max 0.5 max µa
In Common-Base Circuit
In Common-Emitter Circuit
2N706 2N706A
DC-Pulse Forward Current-Transfer Ratio (with
dc collector-to-emitter volts = 1, collector ma
= 10, pulse duration = 12 milliseconds or less,
and duty factor = 0.02 or less) 20 min 20 min
Small-Signe Forward Current-Transfer Ratio:
With collector-to-emitter volts = 15,
collector ma = 10, and frequency = 100 me 2rrdn
With collector-to-emitter volts = 10.
collector ma = 10. and frequency = 100 Mc 2 in
TRANSISTOR
Silicon n-p-n type used in very-
high-speed switching and high-fre-
quency applications in equipment
which requires high reliability and 2N708
0 high packaging densities. JEDEC No.
TO-18 package; outline 12, Outlines
Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 40 max volts
Collector-to-Emitter Voltage:
With external base-to-emitter resistance = 10 ohms or less 29 max volts
With base open 15 max volts
Emitter-to-Base Voltage (with collector open) 5max volts
Transistor Dissipation:
At case temperatures up to 25°C 1.2 max watts
At ambient temperatures up to 25°C 0.36 max watt
At case or ambient temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) —65 to 200 *C
Storage —65 to 300 *C
Lead Temperature (for 10 seconds maximum) 300 max
CHARACTERISTICS
Base-to-Emitter Saturation Voltage
(with collector ma -- 10 and base ma — 1) 0. 8max volt
Collector-to-Emitter Saturation Voltage
(with collector ma = 10 and base ma — 1) 0.4 max volt
Collector-Cutoff Current (with collector-to-base volts = 20
and emitter ma — 0) 0. 025 max eta
In Common-Base Circuit
In Common-Emitter Circuit
TRANSISTOR
Silicon n-p-n type used in ultra-
high-speed logic-circuit applica-
21\1709 tions in data-processing equipment.
JEDEC No. TO-18 package; outline
12, Outlines Section. This type is
electrically identical with type
2N2475 except for the following items:
CHARACTERISTICS
Base-to-Emitter Saturation Voltage
(with collector ma = 3 and base ma = 0.15) 07to 0-85 volt
Collector-to-Emitter Saturation Voltage
(with collector ma = 3 and base ma = 0.15) 0.3 max volt
In Common-Base Circuit
In Common-Emitter Circuit
TRANSISTOR
Germanium p-n-p type used in
high-speed logic-circuit applica-
2N710 tions in data-processing equipment.
JEDEC No. TO-18 package; outline
12, Outlines Section. This type is
identical with type 2N705 except for
the following items:
MAXIMUM RATINGS
Emitter-to-Base Voltage (with collector open) —2 max volts
CHARACTERISTICS
Base-to-Emitter Voltage (with collector ma = —10 and base ma
= —0.4) —0.5 max volt
Collector-to-Emitter Saturation Voltage
(with collector ma = —10 and base ma = —0.4) —0.5 max volt
In Common-Emitter Circuit
TRANSISTOR
Germanium p-n-p type used in
high-speed logic-circuit applica-
2N711 tions in data-processing equipment.
JEDEC No. TO-18 package; outline
12, Outlines Section. This type is
identical with type 2N705 except
for the following items:
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —12 max volts
Collector-to-Emitter Voltage
(with external base-to-emitter resistance = 10 ohms or less) —12 max volts
Technical Data 175
CHARACTERISTICS
Base-to-Emitter Voltage (with collector ma = —10 and base ma
Collector-to-Emitter
to-Emitter Saturation Voltage —0 5max volt
(with collector ma = —10 and base ma = —0.5) —0 5max volt
In Common-Emitter Circuit
Small-Signal Forward Current-Transfer Ratio (with collector-to-
emitter volts = —5, collector ma = —10, and frequency
= 100 Mc) 2
DC Forward Current-Transfer Ratio (with collector-to-emitter
volts = —0.5 and collector ma = —10) 20 min
TRANSISTOR
c
high-speed switching applications.
JEDEC No. TO-18 package; outline
2N718A
12, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 75 max volts
Collector-to-Emitter Voltage (with base open) 32 max volts
Collector-to-Emitter Voltage (with external base-to-emitter
resistance = 10 ohms or less) 50 max volts
Emitter-to-Base Voltage (with collector open) 7max volts
Transistor Dissipation:
At case temperatures up to 25°C 1.8 max watts
At ambient temperatures up to 25°C 0.5 max watt
At case or ambient temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) —65 to 200 °C
Storage —65 to 300 °C
Lead Temperature (for 10 seconds maximum) 255 max °C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector ma = 0.1
and emitter current — 0) 75 min volts
Emitter-to-Base Breakdown Voltage (with emitter ma = 0.1
and collector current = 0) 7min volts
Collector-to-Emitter Sustaining Voltage (with external base-to-
emitter resistance = 10 ohms and pulsed collector ma = 100') 50 min volts
Base-to-Emitter Saturation Voltage
(with pulsed collector ma = 150" and pulsed base ma = 15') . 1.3 max volts
Collector-to-Emitter Saturation Voltage
(with pulsed collector ma = 150* and pulsed base ma = 15°) . 1.5 max volts
Collector-Cutoff Current (with collector-to-base volts = 60 and
emitter current — 0) 0.01 max pa
Emitter-Cutoff Current (with emitter-to-base volts = 5 and
collector current — 0) 0.01 max ma
Thermal Resistance:
Junction-to-case 97 max °C/watt
Junction-to-ambient 350 max •C/watt
In Common-Base Circuit
Emitter-to-Base Capacitance (with emitter-to-base volts = 0.5
and collector current — 0) 80 max Pf
Collector-to-Base Capacitance (with collector-to-base volts =
10 and emitter current — 0) 25 max Pf
In Common-Emitter Circuit
DC Forward Current-Transfer Ratio:
With collector-to-emitter volts = 10 and pulsed collector
ma = 150' 40 to 120
With collector-to-emitter volts = 10 and pulsed collector
ma = 500* 20 znin
With collector-to-emitter volts = 10 and pulsed collector
ma = 10* 35 Mill
With collector-to-emitter volts = 10 and collector ma
= 0.1 20 min
With ambient temperature = —55°C, collector-to-emitter
volts = 10, and pulsed collector ma — 10. 20 min
176 RCA Transistor Manual
V)
cr
a. \B NA 12 ‘0
e
a 500 e
-J
5 400
4
o
1.11
e..) 300
0 200
se
100
BASE MILLIAMPERES. 0
o 4 6 8
COLLECTOR-TO - EMITTER VOLTS
10
WM-1111197
0 7.1 300
o 200
e-
30 Lu
-à 100
o
TRANSISTOR
Silicon n-p-n type used in a
wide variety of small-signal and
high-speed switching applications.
JEDEC No. TO-18 package; outline
2N720A
12, Outlines Section. For curves of
typical collector and transfer charac-
teristics, refer to type 2N718A.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 120 max volts
Collector-to-Emitter Voltage (with base open) 80 max volts
Collector-to-Emitter Voltage (with external base-to-emitter
resistance = 10 ohms or less) 100 max volts
Emitter-to-Base Voltage (with collector open) 7max volts
Transistor Dissipation:
At case temperatures up to 25°C 1.8 max watts
At ambient temperatures up to 25°C 0.5 max watt
At case or amblent temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) —65 to 200 .c
Storage —65 to 300 •C
Lead Temperature (for 10 seconds maximum) 255 max *C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector ma = 0.1
and emitter current — 0) 120 min volts
Emitter-to-Base Breakdown Voltage (with emitter ma = 0.1
and collector current — 0) 7min volts
Collector-to-Emitter Sustaining Voltage (with pulsed collector
ma = 100* and base current — 0) 80 min volts
Collector-to-Emitter Sustaining voltage (with external base-to-
emitter resistance = 10 ohms and pulsed collector ma = 100) 100 min volts
Base-to-Emitter Saturation Voltage
(with pulsed collector ma = 150' and pulsed base ma = 15') 1.3 max volts
Collector-to-Emitter Saturation Voltage
(with pulsed collector ma = 150" and pulsed base ma = 15') 5max volts
Collector-Cutoff Current (with collector-to-base volts = 90 and
emitter current = 0) 0.01 max ma
Emitter-Cutoff Current (with emitter-to-base volts = 5 and
collector current — 0) 0.01 max mo
Thermal Resistance:
Junction-to-case 97 max °C/watt
Junction-to-ambient 350 max •C/watt
In Common-Base Circuit
à 6
o
t 4
0 2
'BASE MICROAMPERES .0
o 20 40 60 80 100
COLLECTOR-TO-EMITTER VOLTS
82CS-11178T
178 RCA Transistor Manual
In Common-Emitter Circuit
TRANSISTOR
Germanium p-n-p type used in
high-speed switching applications in
which high reliability and high
2N828 packaging densities are required.
JEDEC No. TO-18; outline 12, Out-
lines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —15 max volts
Collector-to-Emitter Voltage (with external base-to-emitter
resistance = 10 ohms or less) --15 max volts
Emitter-to-Base Voltage (with collector open) —2.5 max volts
Collector Current —200 max ma
Transistor Dissipation:
At case temperatures up to 25°C 300 max mw
At ambient temperatures up to 25°C 150 max mw
At case or ambient temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) and storage —65 to 100 °C
Lead Temperature (for 10 seconds maximum) 230 max *C
CHARACTERISTICS
Base-to-Emitter Saturation Voltage
(with collector ma = —10 and base ma = —1) 034 to 0.44 volt
Collector-to-Emitter Saturation Voltage:
With collector ma = —10 and base ma — —1 —0.2 max volt
With collector ma = —50 and base ma — —5 —0.25 max volt
Collector-Cutoff Current (with collector-to-base volts = —6
and emitter current = 0) —3 max µa
Technical Data 179
In Common-Bose Circuit
In Common-Emitter Circuit
TRANSISTOR
Silicon n-p-n type used in very-
high-speed switching applications in
equipment requiring high reliability
and high packaging densities. JEDEC 2N834
No. TO-18 package; outline 12, Out-
lines Section,
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 40 max volts
Collector-to-Emitter Voltage (with base short-circuited
to emitter) 30 max volts
Emitter-to-Base Voltage (with collector open) 5max volts
Collector Current 200 max ma
Transistor Dissipation:
At case temperatures up to 25*C 1max watt
At ambient temperatures up to 25°C 0.3 max watt
At case or ambient temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) and storage —65 to 175 *C
Lead Temperature (for 10 seconds maximum) 240 max
CHARACTERISTICS
Base-to-Emitter Saturation Voltage
(with collector ma = 10 and base ma — 1) 0.9 max volt
Collector-to-Emitter Saturation Voltage:
With collector ma = 10 and base ma — 1 0.25 max volt
With collector ma = 50 and base ma — 5 0.4 max volt
Collector-Cutoff Current (with collector-to-base volts = 20
and emitter current — 0) 0.5 max jia
In Common-Base Circuit
In Common-Emitter Circuit
TRANSISTOR
Silicon n-p-n type used in high-
speed logic-switching and very-
high-frequency amplifier applica-
tions. JEDEC No. TO-18 package;
2N914
outline 12, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 40 max volts
Collector-to-Emitter Voltage:
With external base-to-emitter resistance = 10 ohms or less 20 max volts
With base open 15 max volts
180 RCA Transistor Manual
CHARACTERISTICS
Base-to-Emitter Saturation Voltage
(with collector ma = 10 and base ma — 1) 0.7 to 0.8 volt
Collector-to-Emitter Saturation Voltage
(with collector ma = 200 and base ma = 20) 0.7 max volt
Collector-Cutoff Current (with collector-to-base volts = 20
and emitter current — 0) 0.025 max ga
In Common-Base Circuit
In Common-Emitter Circuit
TRANSISTOR
Germanium n-p-n types used in
2N955 high-speed logic-circuit applica-
tions in data-processing equipment
2N955A JEDEC No. TO-18 pgckeige; outline
12, Outlines Section.
MAXIMUM RATINGS
2N955 2N955A
Collector-to-Base Voltage (with emitter open} 12 max 12 max volts
Collector-to-Emitter Voltage (with base open 8max 8max volts
Emitter-to-Base Voltage (with collector open 2max 2max volts
Collector Current 100 max 150 max ma
Transistor Dissipation:
At ambient temperatures up to 25°C 150 max 150 max MW
At ambient temperatures above 25°C See curve page 80
Ambient-Temperature Range:
Operating and storage —65 to 100
Lead Temperature (for 10 seconds maximum) „ 230 max 230 max °C
CHARACTERISTICS
Base-to-Emitter Saturation Voltage
(with collector ma = 30 and base ma = 1) 0.3 to 0.6 0.3 to 0.6 volt
Collector-to-Emitter Saturation Voltage:
With collector ma = 30 and base ma = 1 0.5 max 0.3 max volt
With collector ma = 100 and base ma = 5 — 0.6 max volt
Collector-Cutoff Current (with collector-to-base
volts = 5 and emitter current — 0) 5max 5max µa
Total Stored Charge (with collector ma = 30
and base ma = 1.5) 125 max 65 max pcoul
In Common-Bose Circuit
In Common-Emitter Circuit
TRANSISTOR
Germanium p-n-p type used in
high-speed saturation switching ap-
plications in industrial data-process-
ing equipment. JEDEC No. TO-18
2N960
package; outline 12, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage —15 max volts
Collector-to-Emitter Voltage (with external base-to-emitter
resistance — 0) —15 max volts
Collector-to-Emitter Voltage —7 max volts
Emitter-to-Base Voltage —2.5 max volts
Collector Current —100 max ma
Transistor Dissipation:
At case temperatures up to 25°C 300 max mw
At ambient temperatures up to 25°C 150 max mw
At case or ambient temperatures above 25°C See curve page 80
Temperature Range:
Operating —55 to 100 °C
Storage —65 to 100 °C
Lead Temperature (for 10 seconds maximum) 230 max .c
CHARACTERISTICS .
Collector-to-Emitter Saturation Voltage:
With collector ma = —10 and base ma = —1 —0.2 max volt
With collector ma -= —50 and base ma = —5 —0.4 max volt
With collector ma = —100 and base ma = —10 —0.7 max volt
Collector-Cutoft Current (with collector-to-base volts = —6
and emitter current — 0) —6 max ga
In Common-Base Circuit
In Common-Emitter Circuit
DC Forward Current-Transfer Ratio:
With collector-to-emitter volts = —0.3 and collector ma = —10 20 min
With collector-to-emitter volts = —1 and collector ma = —50 20 min
With collector-to-emitter volts = —1 and collector ma = —100 20 min
TRANSISTOR
Germanium p-n-p type used in
high-speed saturated switching ap-
plications in industrial data-process-
ing equipment. JEDEC No. TO-18
2N961
package; outline 12, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage —12 max volts
Collector-to-Emitter Voltage (with external base-to-emitter
resistance = 0) —12 MaX volts
Collector-to-Emitter Voltage —7 max volts
Emitter-to-Base Voltage —2 max volts
Collector Current —100 max Illa
Transistor Dissipation:
At case temperatures up to 25°C 300 max mw
At ambient temperatures up to 25°C 150 max mw
At case or -ambient temperatures above 25°C See curve page 80
182 RCA Transistor Manual
Temperature Range:
Operating —55 to 100
Storage —65 to 100 °C
Lead Temperature (for 10 seconds maximum) 230 max •C
CHARACTERISTICS
Collector-to-Emitter Saturation Voltage:
With collector ma = —10 and base ma — —1 —0.2 max volt
With collector ma = —50 and base ma — —5 —0.4 max volt
With collector ma = —100 and base ma = —10 —0,7 max volt
Collector-Cutoff Current (with collector-to-base volts = —6
and emitter current — 0) —3 max xa
in Common-Base Circuit
In Common-Emitter Circuit
TRANSISTOR
MAXIMUM RATINGS
Collector-to-Base Voltage —12 max volts
Collector-to-Emitter Voltage (with external base-to-emitter
resistance -- 0) —12 max volts
Collector-to-Emitter Voltage —7 max volts
Emitter-to-Base Voltage —1.25 max volts
Collector Current —100 max Ma
Transistor Dissipation:
At case temperatures up to 25°C 300 max mw
At ambient temperatures up to 25°C 150 max mw
At case or ambient temperatures above 25°C See curve page 80
Temperature Range:
Operating —55 to 100 •C
Storage —65 to 100 °C
Lead Temperature (for 10 seconds maximum) 230 max °C
CHARACTERISTICS
Collector-to-Emitter Saturation Voltage:
With collector ma = —10 and base ma = —1 —0.2 max volt
With collector ma = —50 and base ma .=.- —5 —04 max volt
With collector ma = —100 and base ma = —10 —0.7 max volt
Collector-Cutoff Current (with collector-to-base volts = —6
and emitter current — 0) —3 max Pa
In Common-Base Circuit
In Common-Emitter Circuit
TRANSISTOR
MAXIMUM RATINGS
Collector-to-Base Voltage —12 max volts
Collector-to-Emitter Voltage (with external base-to-emitter
Collector-to-Emitter
resistance
llvolts = 0) Voltage —12
—7 max volts
Emitter-to-Base Voltage —1.25 max volts
Collector Current —100 max ma
Transistor Dissipation:
At case temperatures up to 25°C 300 max mw
At ambient temperatures up to 25°C 150 max mw
At case or ambient temperatures above 25°C See curve page 80
Temperature Range:
Operating —55 to 100 "C
Storage —65 to 100
Lead Temperature (for 10 seconds maximunl) 230 max •C
CHARACTERISTICS
Collector-to-Emitter Saturation Voltage (with collector ma = —10
and base ma = —1) —0.2 max volt
Collector-Cutoff Current (with collector-to-base volts = —6
and emitter current — 0) —5 max µa
In Common-Base Circuit
In Common-Emitter Circuit
DC Forward Current-Transfer Ratio (with collector-to-emitter
volts = —0.3 and collector ma = —10) 20 min
TRANSISTOR
Germanium p-n-p type used in
high-speed saturated switching ap-
plications in industrial data-process-
ing equipment. JEDEC No. TO-18 2N964
package; outline 12, Outlines Section.
This type is identical with type
2N960 except for the following items:
CHARACTERISTICS
Collector-to-Emitter Saturation Voltage:
With collector ma = —10 and base ma — —1 —0.18 max volt
With collector ma .7. —50 and base ma — —5 —0.35 max volt
With conector ma = —100 and base ma = —10 —04 max volt
In Common-Emitter Circuit
DC Forward Current-Transfer Ratio:
With collector-to-emitter volts = —0.3 and collector ma = —10 40 min
With collector-to-emitter volts = —1 and collector ma = —50 40 min
With collector-to-emitter volts = —1 and collector ma = —100 40 min
184 RCA Transistor Manual
TRANSISTOR
CHARACTERISTICS
Collector-to-Emitter Saturation Voltage:
With collector ma = —10 and base ma — —1 —0.18 max volt
With collector ma = —50 and base ma — —5 —0.35 max volt
With collector ma = —100 and base ma = —10 —0.6 max volt
In Common-Emitter Circuit
TRANSISTOR
CHARACTERISTICS
Collector-to-Emitter Saturation Voltage:
With collector ma = —10 and base ma = —1 -0.18 max volt
With collector ma = —50 and base ma = —5 —0.35 max volt
With collector ma = —100 and base ma = —10 —0.6 max volt
In Common-Emitter Circuit
TRANSISTOR
CHARACTERISTICS
In Common-Emitter Circuit
TRANSISTOR
Germanium n-p-n type used in
low-noise small-signal audio-fre-
e quency amplifier applications. It is 2N1010
used in input stages of audio-fre-
quency amplifiers operating from
extremely small input signals, such
as high-fidelity preamplifiers, tape-recorder amplifiers, microphone preampli-
fiers, and hearing aids, in which low noise is an important design considera-
tion. JEDEC No. TO-1 package; outline 4, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 10 max volts
Collector-to-Emitter Voltage 10 max volts
Emitter-to-Base Voltage (with collector open) 10 max volts
Collector Current 2max ma
Emitter Current —2 max ma
Transistor Dissipation:
At ambient temperatures up to 55°C 20 max mw
Ambient-Temperature Range:
Operating —65 to 55 •c
Storage —65 to 85 'C
CHARACTERISTICS
Collector-Cutoff Current (with collector-to-base volts = to
and emitter current — 0) 10 max ita
Emitter-Cutoff Current (with emitter-to-base volts = 2.5
and collector current — 0) 6max gal
In Common-Base Circuit
In Common-Emitter Circuit
TRANSISTOR
Germanium p-n-p type used in
rf and if amplifier circuits; oscillator,
mixer, and converter circuits; and 2N1023
low-level video-amplifier circuits in
industrial and military equipment.
It is used in the design of rf circuits
having high input-circuit efficiency, excellent operating stability, good auto-
matic-gain-control capabilites over a wide range of input-signal levels, and
good signal-to-noise ratio. The drift-field construction provides low base re-
sistance and collector-transition capacitance, and improves performance at
high frequencies. The center lead is internally connected to the metal case to
provide integral shielding which minimizes interlead capacitance and coupling
to adjacent circuit components. For curves of typical collector characteristics
and for video-amplifier circuit, refer to type 2N384. JEDEC No. TO-44 package;
outline 16, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —40 max volts
Collector-to-Emitter Voltage (with base-to-emitter volts = 0.5) —40 max volts
186 RCA Transistor Manual
CHARACTERISTICS
Collector-to-Base Breakdown Voltage
(with collector pa = —50 and emitter current = 0) —80 volts
Collector-to-Emitter Reach-Through Voltage
(with emitter-to-base volts = —0.5) —80 volts
Collector-Cutoff Current (with collector-to-base volts = —12
and emitter current — 0) —4 ida
Emitter-Cutoff Current (with emitter-to-base volts = —0.5
and collector current — 0) —1 sa
Thermal Resistance:
Junction-to-case 0.31 max °C/mw
Junction-to-ambient 0.62 max °C/mw
In Common-Base Circuit
Small-Signal Forward-Current-Transfer-Ratio Cutoff Frequency
(with collector-to-base volts = —12 and emitter ma = 1.5) 120 Mc
Input Resistance with ac output circuit shorted (with collector-
to-base volts = —12, emitter ma = 1.5, and frequency = 50 Mc) 25 ohms
Output Resistance with ac input circuit shorted (with collector-
to-base volts = —12, emitter ma = 1.5 and frequency = 50 Mc) 8000 ohms
Collector-to-Base Capacitance (with collector-to-base volts
= —12 and emitter current — 0) 2 pf
Power Gain (with collector-to-base volts = —12,
emitter ma = 1.5, and frequency = 50 Mc) 21 db
In Common-Emitter Circuit
Small-Signal Forward Current-Transfer Ratio (with collector-to-
emitter volts = —12, emitter ma = 1.5 and frequency
— 1 kilocycle) 60
In—
put Resistance with ac output circuit shorted (with collector-
to-emitter volts = —12, emitter ma = 1.5. and frequency
-- 30 Mc) 100 ohms
Output Resistance with ac input circuit shorted (with collector-
to-emitter volts = —12, emitter ma = —1.5, and frequency
= 30 Mc) 8000 ohms
Power Gain (with collector-to-emitter volts = —12,
, emitter ma = 1.5, and frequency = 30 Mc) 23 db
TRANSISTOR
Germanium p-n-p type used in
rf and if amplifier circuits; oscillator,
2N1066 mixer, and converter circuits; and
low-level video-amplifier circuits in
industrial and military equipment.
It is used in the design of rf circuits
having high input-circuit efficiency, excellent operating stability, good auto-
matic-gain-control capabilities over a wide range of input-signal levels, and
good signal-to-noise ratio. The drift-field construction provides low base re-
sistance and collector-transition capacitance, and improves performance at high
frequencies. A fourth lead is internally connected to the metal case to provide
integral shielding which minimizes interlead capacitance and coupling to adja-
cent circuit components. JEDEC No. TO-33 package; outline 13, Outlines Sec-
tion. This type is electrically identical with type 2N1023.
Technical Data 187
POWER TRANSISTOR
Silicon n-p-n type used in a
wide variety of intermediate-power
switching and amplifier applications 2N1067
in industrial and military equipment.
It is used in power-switching, dc-to-
dc converter, inverter, chopper,
solenoid and relay control circuits; in oscillator, regulator, and pulse-amplifier
circuits; and as a class A or class B push-pull audio and servo amplifier. It
features low saturation resistance, high current and power dissipation, high
beta at high current, and excellent high-temperature performance. JKDEC
No. TO-8 package; outline 8, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 60 max volts
Collector-to-Emitter Voltage:
With base short-circuited to emitter 60 max volts
With base open 45 max volts
Emitter-to-Base Voltage (with collector open) 12 max volts
Collector Current 0.5 max ampere
Emitter Current —0.5 max ampere
Base Current 0.2 max ampere
Transistor Dissipation:
At case temperatures up to 25°C 5max watts
At case temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) and storage —65 to 175
CHARACTERISTICS
Emitter-to-Base Voltage (with collector-to-emitter volts = 4
and collector ma = 200) —1.2 volts
Collector-Cutoff Current (with collector-to-base volts = 60
and emitter current = 0) 15
Emitter-Cutoff Current (with emitter-to-base volts = 12
and collector current — 0) 1 ma
Collector Current:
With collector-to-emitter volts = 60 and base short-circuited
to emitter 100
With collector-to-emitter volts = 30 and base open 100
Thermal Resistance:
Junction-to-case 15 "C/watt
Junction-to-ambient 100 max °C/watt
Thermal Time Constant 8 rissec
In Common-Base Circuit
600
cc 113
500 16
14
400 12
...„..
10 Ti'r+
o 300
1-
8 e<e)b
A
-I 200
DISgn,
4
`
-'7 1WATT5 )
.5
100 _
BASE MILLIAMPERES•2
.- I II
o 40 45 50
COLLECTOR-TO-EMITTER VOLTS 92C11 1000171
188 RCA Transistor Manual
In Common-Emitter Circuit
15 4,
r, Io
o
2 3
92C3-10023
BASE-10- EMITTER VOLTS
92U-1000Zr
Bi. 82 = 12 volts
Ci = 5 µf, electrolytic, 25 volts
Ri = 51 ohms, 1 watt
Rs = 280 ohms, 0.5 watt
Ra = 700 ohms, 1 watt
R4 = 59 ohms, 2 watts
POWER TRANSISTOR
Silicon n-p-n type used in a
wide variety of intermediate-power
2N1068 switching and amplifier applications
in industrial and military equip-
ment. It is used in power switching,
dc-to-dc converter, inverter, chop-
per, solenoid and relay control circuits; in oscillator, regulator, and pulse-
amplifier circuits; and as a class A or class B push-pull audio and servo
amplifier. It features low saturation resistance, high current and power dissi-
pation, high beta at high current, and excellent high-temperature performance.
JEDEC No. TO-8 package; outline 8, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage 60 max volts
Collector-to-Emitter Voltage:
With base short-circuited to emitter 60 max volts
With base open 45 max volts
Emitter-to-Base Voltage (with collector open) 12 max volts
Collector Current 1.5 max amperes
Emitter Current —1.5 max amperes
Base Current 0.5 max ampere
Transistor Dissipation:
At case temperatures up to 25°C 10 max watts
At case temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) and storage —65 to 175 °G
Technical Data 189
CHARACTERISTICS
Emitter-to-Base Voltage (with collector-to-emitter volts = 4
and collector ma = 750) —1.2 volts
Collector-Cutoff Current (with collector-to-base volts = 60
and emitter current — 0) 15 µa
Emitter-Cutoff Current (with emitter-to-base volts .- 12
and collector current — 0) 1 µa
Collector Current:
With collector-to-emitter volts -= 60 and base short-circuited
to emitter 100 ea
With collector-to-emitter volts = 30 and base open 100 µa
Thermal Resistance:
Junction-to-case 7.5 °C/watt
Junction-to-ambient 100 max °C/watt
Thermal Time Constant 8 msec
M Common-Base Circuit
In Common-Emitter Circuit
25 .
-....•
20
15 .
13
a
5 4 sPAr
3 Arts). s
o
0.2 I 2
BASE MILLIAMPERES •I
1 1 1
o
COLLECTOR -TO- EMITTER VOLTS 92Cal-r000m
'TRANSISTOR C
TYPICAL TRANSFER CHARACTERISTICS CI R2 1 81 B
TYPE 2N 1068
COMMON-EMITTER CIRCUIT, BASE INPUT
- COLLECTOR-TO-EMITTER VOLTS=4
MOUNTING-BASE TEMPERATURE =25•C
fe
82
ce
92CS-10023
B1, B9 = 12 volts
0 05 15 aO Ci = 5 µf, electrolytic, 25 volts
R1 =. 51 ohms, 1 watt
BASE-TO- EMITTER yours Rs = 100 ohms, 0.5 watt
ncs-l000n R.-=- 320 ohms, 1 watt
Ra =15.9 ohms, 2 watts
190 RCA Transistor Manual
POWER TRANSISTOR
Silicon n-p-n type used in a
wide variety of intermediate-power
2N1 069 switching and amplifier applications
in industrial and military equip-
ment. It is used in power switching,
dc-to-dc converter, inverter, chopper,
solenoid and relay control circuits; in oscillator, regulator, and pulse-amplifier
circuits; and as a class A or class B push-pull audio and servo amplifier. It
features low saturation resistance, high current and power dissipation, high
beta at high current, and excellent high-temperature performance. JEDEC
No. TO-3 package; outline 5, Outlines Section. This type is identical with type
2N1070 except for the following:
CHARACTERISTICS
Emitter-to-Base Voltage (with collector-to-emitter volts = 4
and collector amperes = 1.5) —127 volts
In Common-Emitter Circuit
POWER TRANSISTOR
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 60 max volts
Collector-to-Emitter Voltage:
With base short-circuited to emitter 60 max volts
With base open 45 max volts
Emitter-to-Base Voltage (with collector open) 9max volts
Collector Current 4max amperes
Emitter Current —4 max amperes
Base Current 1.3 max amperes
Transistor Dissipation:
At mounting-flange temperatures up to 25°C 50 max watts
At mounting-flange temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) and storage —65 to 175
Technical Data 191
CHARACTERISTICS
Emitter-to-Rase Voltage (with collector-to-emitter volts = 4
and collector amperes = 1.5) —1.1 volts
Collector-Cutoff Current (with collector-to-base volts = 60
and emitter current — 0) 25 Pa
Emitter-Cutoff Current (with emitter-to-base volts = 9
and collector current — 0) 1 ma
Collector Current:
With collector-to-emitter volts = 60 and base short-circuited
to emitter 200 pa
With collector-to-emitter volts = 45 and haqA open 200 Pa
Thermal Resistance:
Junction-to-mounting-flange 1 *C/watt
Thermal Time Constant 10 msec
I
n Common-Base Circuit
I
n Common-Emitter Circuit
\ --60 .s-50
20
0.5
10
5
o 50
COLLECTOR- 70- EMIT TER VOLTS 92CM -100320
40 CP\>.
41)
20
B2
0 05 I5 I
I
BASE- TO -EMITTER VOLTS
92CS-10023
92C5-10026T
BI 132 = 12 volts
Ci =. 5pf, electrolytic, 25 volts
= 51 ohms, 1 watt
R2 = 10 ohms, 0.5 watt
Ra = 75 ohms, 1 watt
R, = 7.5 ohms, 2 watts
192 RCA Transistor Manual
TRANSISTOR
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 25 max volts
Collector-to-Emitter Voltage:
With base-to-emitter volts = —1 18 max volts
With base open 15 max volts
Emitter-to-Base Voltage (with collector open) 20 max volts
Collector Current 400 max ma
Transistor Dissipation:
At ambient temperatures up to 25°C 120 max mw
At ambient temperature of 55°C 35 max mw
At ambient temperature of 71°C 10 max mw
Ambient-Temperature Range:
Operating and storage —65 to 85 •C
CHARACTERISTICS
Base-to-Emitter Voltage:
With collector ma = 20 and base ma = 0.67 0.4 max volt
With collector ma -- 200 and base ma — 10 1.5 max volts
Collector-to-Emitter Saturation Voltage:
With collector ma = 20 and base ma = 0.67 0.2 max volt
With collector ma = 200 and base ma — 10 0.3 max volt
Collector-Cutoff Current (with collector-to-base volts = 12
and emitter current — 0) 8max sa
Stored Base Charge (with collector ma z-... 20 and base ma = 1.33) 1600 max pcoul
In Common-Bose Circuit
In Common-Emitter Circuit
TRANSISTOR
CHARACTERISTICS
Base-to-Emitter Voltage:
With collector ma = 20 and base ma = 0.5 0.35 max volt
With collector ma = 200 and base ma = 6.7 1.1 max volts
Collector-to-Emitter Saturation Voltage:
With collector ma = 20 and base ma = 0.5 0.2 max volt
With collector ma = 200 and base ma = 6.7 0.3 max volt
Collector-Cutoff Current (with collector-to-base volts = 12
and emitter current — 0) 8max µa
Stored Base Charge (with collector ma = 20 and base ma = 1) 1000 max pcoul
In Common-Base Circuit
Forward-Current-Transfer-Ratio Cutoff Frequency
(with collector-to-base volts = 6 and emitter ma = —1) 10 min Mc
Collector-to-Base Capacitance (with collector-to-base volts = 6
and emitter current — 0) 25 max Elf
In Common-Emitter Circuit
Forward Current-Transfer Ratio:
With collector-to-emitter volts = 0.2 and collector ma = 20 40 min
With collector-to-emitter volts = 0.3 and collector ma = 200 30 min
POWER TRANSISTOR
Silicon n-p-n type used in a
wide variety of intermediate-power
switching
in industrial
and and
amplifier
military
applications
equip- 2N1092
o ment. It is used in power switching,
dc-to-dc converter, inverter, chop-
per, solenoid and relay control circuits; in oscillator, regulator, and pulse-
amplifier circuits; and as a class A or class B push-pull audio and servo
amplifier. It features low saturation resistance, high current and power dissi-
pation, high beta at high current, and excellent high-temperature performance.
JEDEC No. TO-5 package; outline 6, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 60 max volts
Collector-to-Emitter Voltage:
With base short-circuited to emitter 60 max volts
With base open 30 max volts
Emitter-to-Base Voltage (with collector open) 12 max volts
Collector Current 0.5 max ampere
Emitter Current —0.5 max ampere
Base Current 0.2 max ampere
Transistor Dissipation:
At case temperatures up to 25°C 2max watts
At case temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) and storage —65 to 175 °C
CHARACTERISTICS
Emitter-to-Base Voltage (with collector-to-emitter volts = 4
and collector ma = 200) —1.2 volts
Collector-Cutoff Current (with collector-to-base volts = 60
and emitter current — 0) 15 ea
Emitter-Cutoff Current (with emitter-to-base volts = 12
and collector current — 0) 1
Collector Current:
With collector-to-emitter volts = 60 and base
short-circuited to emitter 100 ea
With collector-to-emitter volts = 30 and base open 100 ea
Thermal Resistance:
Junction-to-case 35 °C/watt
Junction-to-ambient 225 max °C/watt
Thermal Time Constant 8 msec
In Common-Base Circuit
Small-Signal Forward-Current-Transfer-Ratio Cutoff Frequency
(with collector-to-base volts = 28 and collector ma = 5) 1.5 Mc
In Common-Emitter Circuit
DC Forward Current-Transfer Ratio (with collector-to-emitter
volts = 4 and collector ma = 200) 35
194 RCA Transistor Manual
TYPE 2N1092
TRANSISTOR
_COMMON- EMITTER CIRCUIT. _ Ci /
F2 TB' 5
BASE INPUT.
if
COLLECTOR -TO-EM TTER VOLTS-4
e
l 25 - CASE TEMPERATURE-25°C 500
o.
2 20 .se 400 3
3
• 15 300 if
200 1a
-J
B2
5 100 0
u
o O 92CS-10023
2 3
B., B. — 12 volts
BASE-TO -EMITTER VOLTS •=5 itt, electrolytic, 25 volts
51
—
SzeS-10044T
RI= ohms, 1 watt
R. =280 ohms, 0.5 watt
R. = 700 ohms, 1 watt
EL, =59 ohms, 2 watts
TYPE 2N1092
COMMON -EMITTER CIRCUIT, BASE INPUT.
700 -CASE TEMPERATURE . 25 °C
_I
t'a
n 600
if
18
M 500
16
14
3 400
12 1:1
o t
300
8 0
4,
É
«j 200 6
4 iSse,4r,
100
BASE MILLIAMPERES' N (WArTS) .2
1 ,...—
o 5 10 15 20 25 30 35 40 45 50
COLLECTOR-TO-EMITTER VOLTS 52O1 -loam
POWER TRANSISTOR
Germanium p-n-p type used in
a wide variety of switching and am-
2N1099 plifier applications in industrial and
military equipment requiring tran-
sistors having high voltage, current,
and dissipation values. It is used in L.1E,
CHARACTERISTICS
Collector-to-Emitter Breakdown Voltage:
With base short-circuited to emitter and collector amperes
= —0.3 —70 min volts
With base open and collector amperes = —0.3 —60 volts
Collector-to-Emitter Reach-Through Voltage —80 min volts
Collector-Cutoff Current (with collector-to-base volts = —80
and emitter current — 0) —2 Ilaa
TYPE 2N 099
— COMMON -EMITTER CIRCUIT, BASE INPUT.
CASE TEMPERATURE 25C
20
-800
-700
-600
500
-400
-300
-
-200
-I
-100
-5 50
BA LLIAMPERtS
POWER TRANSISTOR
Germanium p-n-p type used in
awide variety of switching and am-
plifier applications in industrial and 2N1100
military equipment requiring tran-
sistors having high voltage, current,
• and dissipation values. It is used in
power-switching, voltage- and current-regulating, dc-to-dc converter, inverter,
power-supply, and relay- and solenoid-actuating circuits; and in low-frequency
oscillator and audio-amplifier service. This type is designed to provide satis-
factory performance under extreme environmental conditions of temperature,
moisture, and altitude; it is stud-mounted to provide positive heat-sink contact,
and has a cold-weld seal to insure reliable performance under severe environ-
mental conditions. JEDEC No. TO-36 package; outline 14, Outlines Section.
This type is identical with type 2N174 except for the following items:
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter-to-base volts = —1.5) —100 max volts
Emitter-to-Base Voltage (with collector open) —80 max volts
196 RCA Transistor Manual
CHARACTERISTICS
Collector-to-Emitter Breakdown Voltage (with base
short-circuited to emitter and collector amperes = —0.3) —80 min volts
Emitter-to-Base Voltage (with collector-to-base volts = —100
and emitter current = 0) —1 max volt
Collector-to-Emitter Reach-Through Voltage —100 min volts
Emitter-Cutoff Current (with emitter-to-base volts = —80
and collector current — 0) —1 ma
Collector-Cutoff Current (with collector-to-base volts = —100
and emitter current — 0) —3 ma
00
.............'
BASE MILLIAMPER E f0 I2 3
2 fi
o - 40 - 60 -80 -100
COLLECTOR-TO- EMIT TER VOLTS 92CM-10724T
TRANSISTOR
Germanium n-p-n bidirectional
type used in medium-speed switch-
2N'1169 ing circuits in data-processing
equipment. This type is designed so
that the emitter can also function
as a collector and the collector can
also function as an emitter. It is especially useful in bidirectional switching,
core-driver, and ac-signal relay circuits. JEDEC No. TO-5 package; outline 6,
Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 25 max volts
Emitter-to-Base Voltage (with collector open) 25 max volts
Collector-to-Emitter Voltage:
With base-to-emitter volts = —1 20 max volts
With base open 18 max volts
Collector Current -±-400 max ma
Emitter Current ±-400
- max ma
Transistor Dissipation:
At ambient temperatures up to 25°C 120 max mw
At ambient temperature of 55°C 35 max mw
At ambient temperature of 71°C 10 max rnw
Ambient-Temperature Range:
Operating —65 to 71 °C
Storage —65 to 85 °c
CHARACTERISTICS
Base-to-Emitter Voltage (with collector ma = 200 and base
ma = 10) 1.5 max volts
Collector-to-Emitter Saturation Voltage (with collector ma
-- 200 and base ma = 10) 0.3 max volt
Collector-Cutoff Current (with collector-to-base volts = 12
and emitter open) 10 max ua
Technical Data 197
In Common-Base Circuit
Forward-Current-Transfer-Ratio Cutoff Frequency
(with collector-to-base volts = 6 and collector ma = 1) 4.5 min Mc
Collector-to-Base Capacitance (with collector-to-base volts = 6
and collector current — 0) 19 pf
In Common-Emitter Circuit
Forward Current-Transfer Ratio (with collector-to-emitter volts
= 0.3 and collector ma = 200) 20 min
TRANSISTOR
Germanium n-p-n bidirectional
type used in medium-speed switch-
equipment.
ing circuits
This in
typedata-processing
is designed so 2N1170
that the emitter can also function
as a collector and the collector can
also function as an emitter. It is particularly useful in bidirectional switching,
core-driver, and ac-signal relay circuits. JEDEC No. TO-5 package; outline 6,
Outlines Section. This type is identical with type 2N1169 except for the fol-
lowing items:
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 40 max volts
Emitter-to-Base Voltage (with collector open) 40 max volts
Collector-to-Emitter Voltage:
With base-to-emitter volts = —1 39 max volts
With base open 20 max volts
CHARACTERISTICS
Collector-Cutoff Current (with collector-to-base volts = 12
and emitter open) 8max sa
TRANSISTOR
Germanium p-n-p type used in
radio-frequency amplifier applica-
ceivers.
tions in FM
In and
a typical
AM/FMFM
radio
tuner
re- 2N1177
E Is operating at 100 megacycles, this
type can provide a power gain of
14 db. JEDEC No. TO-45 package; outline 17, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —30 max volts
Emitter-to-Base Voltage (with collector open) —1 max volt
Collector Current —10 max ma
Emitter Current 10 max ma
Transistor Dissipation:
At ambient temperatures up to 25°C 80 max mw
At ambient temperature of 55°C 50 max mw
At ambient temperature of 71°C 23 max mw
Ambient-Temperature Range:
Operating —65 to 71 °C
Storage —65 to 85 °C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage
(with emitter-to-base volts = —0.5 and collector sa = —60) —30 min volts
Collector-Cutoff Current (with collector-to-base volts = —12
and emitter current — 0) —12 max sa
Emitter-Cutoff Current (with emitter-to-base volts = —1
and collector current — 0) —12 max sa
In Common-Base Circuit
Small-Signal Forward Current-Transfer Ratio (with collector-
to-base volts = —12, collector ma = —1, and frequency = 1
kilocycle) 0.99
198 RCA Transistor Manual
in Common-Emitter Circuit
o 3
30
1
- 2.5
3
-
2 2 -ZO
.-----'
BASE MICROAMPERES' -0
O.
-2 -4 -6 -8 -10 -12 -4 -6 -8 -2 - - -
COLLECTOR-TO-EMITTER VOLTS 32CIA -10200T1
TRANSISTOR
Germanium p-n-p type used in
radio-frequency oscillator applica-
2N1 '178tions in FM and AM/FM radio re-
ceivers. In local-oscillator service at
a frequency above the incoming rf E B IS
signal, this type can supply an rf
mixer stage with required oscillator-injection voltage for optimum mixing
throughout the FM band. JEDEC No. TO-45 package; outline 17, Outlines Sec-
tion. This type is identical with type 2N1177 except for the following items:
CHARACTERISTICS
in Common-Base Circuit
In Common-Emitter Circuit
TYPICAL OPERATION
DC Collector-to-Base Voltage —11 volts
Collector Current —2.5 ma
Technical Data 199
TRANSISTOR
Germanium p-n-p type used in
radio-frequency mixer applications
in FM and AM/FM radio receivers. 2N1179
In a typical FM tuner operating at
E 18 100 megacycles, this type can pro-
vide a conversion power gain of
17 db. JEDEC No. TO-45 package; outline 17, Outlines Section. This type is
identical with type 2N1177 except for the following items:
MAXIMUM RATINGS
In Common-Base Circuit
In Common-Base Circuit
TYPICAL OPERATION
DC Collector-to-Base Voltage —12 volts
DC Collector Current —0.8 ma
Signal Frequency 100 Mc
Input Resistance (with ac output circuit shorted) 40 ohms
Output Resistance (with ac input circuit shorted and
intermediate frequency = 10.7 Mc) 90000 ohms
RMS Base-to-Emitter Oscillator
Injection Voltage 125 MY
Extrinsic Conversion Transconductance 7500 µmhos
Collector-to-Base Output Capacitance
Maximum Available Conversion Power Gain 17
2
g,
TRANSISTOR
Germanium p-n-p type used in
intermediate-frequency amplifier ap-
plications inInFM
receivers. a and
three-stage
AM/FM radio
10.7- 2N1180
E 8 IS c megacycle if amplifier circuit, this
type can provide a useful power
gain of 65 db with neutralization or 57 db without neutralization. JEDEC No.
TO-45 package; outline 17, Outlines Section. This type is identical with type
2N1177 except for the following items:
MAXIMUM RATINGS
Emitter-to-Base Voltage (with collector open) —0.5 max volt
CHARACTERISTICS
Emitter-Cutoff Current (with emitter-to-base volts = —0.5
and collector current — 0) —12 max pa
In Common-Bose Circuit
In Common-Emitter Circuit
DC Forward Current-Transfer Ratio (with collector-to-emitter
volts = —12, collector ma = —1, and frequency = 1 kilocycle) 80
TYPICAL OPERATION
DC Collector-to-Emitter Voltage —12 volts
DC Collector Current —1.5 ma
Signal Frequency 10.7 Mc
Input Resistance (with ac output circuit shorted) 325 ohms
Output Resistance (with ac input circuit shorted) 24000 ohms
Extrinsic Transconductance 40250 'mhos
Collector-to-Base Output Capacitance 2 pf
Maximum Power Gain:
Single Stage Three Stages
Available 35 35 db
Useful:
In neutralized circuit 23 21.6 db
In unneutralized circuit 20 19 db
POWER TRANSISTOR
Germanium p-n-p types used in
2N1183 intermediate-power switching and
2N1183A low-frequency amplifier applications
in industrial and military equipment.
2N ' 183B They are used in power switching,
dc-to-dc converters, choppers, sole-
noid drivers, and relay controls; in oscillator, regulator, and pulse-amplifier
circuits; and as class A or class 13 amplifiers for servo and linear amplifier
applications. JEDEC No. TO-8 package; outline 8, Outlines Section.
MAXIMUM RATINGS
2N1183 2N1183A 2N1183B
Collector-to-Base Voltage
(with emitter open) —45 max —60 max —80 max volts
Collector-to-Emitter Voltage:
With emitter-to-base volts = —1.2 . —45 max —60 max —80 max volts
With base short-circuited to emitter —35 max —50 max —60 max volts
With base open —20 max —30 max —40 max volts
Emitter-to-Base Voltage
(with collector open) —20 max —20 max —20 max volts
Collector Current —3 max —3 max —3 max amperes
Emitter Current 3.5 max 3.5 max 3.5 max amperes
Base Current —0.5 max —0.5 max —0.5 max ampere
Transistor Dissipation:
At case temperatures up to 25°C 7.5 max 7.5 max 7.5 max watts
At ambient temperatures up to 25°C 1max 1max 1max watt
At case or ambient temperatures
above 25°C See curve page 80
Temperature Range:
Operating (junction) and storage —65 to 100
CHARACTERISTICS
2N1183 2N1183A 2N1183B
Collector-to-Emitter Breakdown
Voltage:
With emitter-to-base volts = —1.2
and collector ma = —0.25 —45 min —60 min —80 min volts
With base short-circuited to emitter
and collector ma = —50 —35 min —50 min —60 min volts
With base open and collector ma
= —50 —20 min —30 min —40 min volts
Emitter-to-Base Voltage
(with collector-to-emitter volts
= —2 and collector ma = —400) . 1.5 max 1.5 max 1.5 max volts
Collector-Cutoff Current:
With collector-to-base volts = —1.5
and emitter current — —30 max —30 max —30 max
With collector-to-base volts = —45
and emitter current — —250 max — —
With collector-to-base volts = —60
and emitter current — — —250 max — ¡ea
With collector-to-base volts = —80
and emitter current — — — —250 max
Emitter-Cutoff Current
(with emitter-to-base volts = —20
and collector current — 0) —100 max —100 max —100 max ¡La
Technical Data 201
In Common-Base Circuit
Small-Signal Forward-Current-Trans-
fer-Ratio Cutoff Frequency (with
collector-to-base volts = —6 and
emitter ma — 1) 500 min 500 min 500 min kc
In Common-Emitter Circuit
DC Forward Current-Transfer Ratio
(with collector-to-emitter volts
=- —2 and collector ma = —400) .. 20 to 60 20 to 60 20 to 60
TYPE 2N11838
COMMON-EMITTER CIRCUIT, BASE INPUT.
-CASE TEMPERATURE •25*C
WITH HEAT SINK.
1
+ -
92CS-10457R1
0 05 I5 2 2.5 BI, B2 = 12 volts
EMITTER-TO-BASE VOLTS • = 10 µf, electrolytic, 25 volts
92C5-10433T1 111 =- 51 ohms, 2 waits
R2 = 120 ohms, 2 watts
Rs = 230 ohms, 1 watt
• = 29.5 ohms, 5 watts
TYPE 2NI183 B
-COMMON-EMITTER CIRCUIT, BASE INPUT.
CASE TEMPERATURE .25C
en WITH HEAT SINK.
-10
< 500
8
-1 6
— 400
o -5
-4
o 3
w 300
-2
o
• 200
BpsE MIL L‘
eePERS'
-160
- -140
...,
-- --- -120
_ -BO
<
5,
-60
-40
0
.,1 etir -20
•75
— BASE MILLI AMPERES
POWER TRANSISTOR
2N1184 Germanium p-n-p types used in
intermediate-power switching and
2N1184A low-frequency amplifier applications
in industrial and military equipment.
2N118413 They are used in power switching,
dc-to-dc converters, choppers, sole-
noid drivers, and relay controls; in oscillator, regulator, and pulse-amplifier
circuits; and as class A or class B amplifiers for servo and linear amplifier
applications. JEDEC No. TO-8 package; outline 8, Outlines Section. These types
are identical with types 2N1183, 2N1183A and 2N1183B, respectively, except
for the following items:
CHARACTERISTICS
In Common-Emitter Circuit
TYPE 2N118413
-COMMON-EMITTER CIRCUIT. BASE INPUT.
CASE TEMPERATURE-25C
WITH HEAT SINK.
=- -500
-400
ce
o
13 -300
-J e
-200
'
-100
-90
-2 80
9 -70
-60
--
-6'4047. -20
-10
4
BASE MILLIAMPERES .- 75
0.5
o -lO12 - - -I -20
COLLECTOR-TO-EMITTER VOLTS 92M-10439n
TRANSISTOR
Germanium p-n-p type used in
rf and if amplifier circuits; oscillator,
mixer and converter circuits; and
low-level video-amplifier circuits in 2N1224
industrial and military equipment.
It is used in the design of rf circuits
having high input-circuit efficiency, excellent operating stability, good auto-
matic-gain-control capabilities over a wide range of input-signal levels, and
good signal-to-noise ratio. The drift-field construction provides low base re-
sistance and collector-transition capacitance, and improves performance at high
frequencies. A fourth lead internally connected to the metal case provides
integral shielding which minimizes interlead capacitance and coupling to adja-
cent circuit components. JEDEC No. TO-33 package; outline 13, Outlines Sec-
tion. This type is electrically identical with type 2N274.
204 RCA Transistor Manual
TRANSISTOR
Germanium p-n-p type used in
rf and if amplifier circuits; oscillator,
2N1225 mixer, and converter circuits; and E
low-level video-amplifier circuits in
industrial and military equipment.
IS
It is used in the design of rf circuits
having high input-circuit efficiency, excellent operating stability, good auto-
matic-gain-control capabilities over a wide range of input-signal levels, and
good signal-to-noise ratio. The drift-field construction provides low base re-
sistance and collector-transition capacitance, and improves performance at
high frequencies. A fourth lead internally connected to the metal case provides
integral shielding which minimizes interlead capacitance and coupling to adja-
cent circuit components. JEDEC No. TO-33 package; outline 13, Outlines Sec-
tion. This type is electrically identical with type 2N384.
TRANSISTOR
Germanium p-n-p type used in
rf and if amplifier circuits; oscillator,
2N1226 mixer, and converter circuits; and g
low-level video-amplifier circuits in
industrial and military equipment.
13
It is used in the design of rf circuits
having high input-circuit efficiency, excellent operating stability, good auto-
matic-gain-control capabilities over a wide range of input-signal levels, and
good signal-to-noise ratio. The drift-field construction provides low base re-
sistance and collector-transition capacitance, and improves performance at
high frequencies. A fourth lead internally connected to the metal case provides
integral shielding which minimizes interlead capacitance and coupling to adja-
cent circuit components. JEDEC No. TO-33 package; outline 13, Outlines Sec-
tion. This type is electrically identical with type 2N274 except for the following
items:
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —GO max volts
Collector-to-Emitter Voltage (with base-to-emitter volts = 0.5) —GO max volts
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector ¡sa = —50
and emitter current — 0) —100 volts
Collector-to-Emitter Reach-Through Voltage
(with emitter-to-base volts = —0.5) —100 volts
TRANSISTOR
Germanium p-n-p type used in
high-speed switching applications in
2N1300 data-processing equipment. JEDEC
No. TO-5 package; outline 6, Out-
lines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —13 max volts
Collector-to-Emitter Voltage (with base open) —12 max volts
Emitter-to-Base Voltage (with collector open) —1 max volt
Collector Current —100 max ma
Emitter Current 100 max ma
Transistor Dissipation:
At ambient temperatures up to 2CC 150 max mw
At ambient temperatures above 25°C See curve page 80
Technical Data 205
CHARACTERISTICS
Base-to-Emitter Voltage (with collector ma = —40
and base ma = —1) —0.4 max volt
Collector-Cutoff Current (with collector-to-base volts = —6
and emitter open) —3 max ea
Total Stored Charge (with collector ma = —10
and base ma = —1) 400 max pcoul
In Common-Base Circuit
In Common-Emitter Circuit
TRANSISTOR
Germanium p-n-p type used in
high-speed switching applications in
data-processing equipment. JEDEC
No. TO-5 package; outline 6, Out- 2N1301
lines Section. Maximum ratings for
this type are the same as for type
2N1300 except for the following items:
MAXIMUM RATINGS
Emitter-to-Base Voltage (with collector open) —4 max volts
CHARACTERISTICS
Base-to-Emitter Voltage (with collector ma =- —40
and base ma = —1) —0.6 max volt
Collector-Cutoff Current (with collector-to-base volts = —6
and emitter current — 0) —3 max µa
Total Stored Charge:
With collector ma = —10 and base ma = —0.4 325 max pcoul
With collector ma = —40 and base ma = —1.6 800 max pcoul
In Common-Base Circuit
In Common-Emitter Circuit
TRANSISTOR
Germanium n-p-n type used in
medium-speed switching applica-
tions in data-processing equipment.
JEDEC No. TO-5 package; outline
2N1302
6, Outlines Section.
-MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 25 max volts
Emitter-to-Base Voltage (with collector open) 25 max volts
— CollectorCurrent 300 max ma
206 RCA Transistor Manual
Transistor Dissipation:
At ambient temperatures up to 25°C 150 max mw
At ambient temperatures above 25°C See curve page 80
Ambient-Temperature Range:
Operating —65 to 85 "C
Storage —65 to 100 *C
Lead Temperature (for 10 seconds maximum) 230 max °C
CHARACTERISTICS
Base-to-Emitter Voltage (with collector ma = 10 and base
ma = 0.5) 0.15 to 0.4 volt
Collector-to-Emitter Saturation Voltage
(with collector ma = 10 and base ma = 0.5) 0.2 max volt
Collector-Cutoff Current (with collector-to-base volts = 25
and emitter current — 0) 6max µa
In Common-Base Circuit
In Common-Emitter Circuit
TRANSISTOR
Germanium p-n-p type used in
medium-speed switching applica-
2N1303 tions in data-processing equipment.
JEDEC No. TO-5 package; outline
6, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —30 max volts
Emitter-to-Base Voltage (with collector open) —25 max volts
Collector Current —300 max ma
Transistor Dissipation:
At ambient temperatures up to 25°C 150 max mw
At ambient temperatures above 25°C See curve page 80
Amblent-Temperature Range:
Operating —65 to 85 °C
Storage —65 to 100 °C
Lead Temperature (for 10 seconds maximum) 230 max °C
CHARACTERISTICS
Base-to-Emitter Voltage (with collector ma = —10 and base
ma = —0.15 to —0.4 volt
Collector-to-Emitter Saturation Voltage
(with collector ma = —10 and base ma = —0.5) —0.2 max volt
Collector-Cutoff Current (with collector-to-base volts = —25
and emitter current = 0) —6 max
In Common-Base Circuit
In Common-Emitter Circuit
TRANSISTOR
Germanium n-p-n type used in
medium-speed switching applica-
tions in data-processing equipment.
JEDEC No. TO-5 package; outline 2N1304
6, Outlines Section. This type is
identical with type 2N1302 except
for the following:
CHARACTERISTICS
Base-to-Emitter Voltage (with collector ma = 10 and base ma
= 0.5) 0.15 to 0.35 volt
Collector-to-Emitter Saturation Voltage
(with collector ma = 10 and base ma = 0.25) 0.2 max volt
In Common-Base Circuit
Forward-Current-Transfer-Ratio Cutoff Frequency
(with collector-to-base volts = 5 and emitter ma — 1) 5min Mc
in Common-Emitter Circuit
Forward Current-Transfer Ratio:
With collector-to-emitter volts = 1 and collector ma = 10 .. 40 to 200
With collector-to-emitter volts = 0.35 and collector ma = 200 . 15 min
TRANSISTOR
Germanium p-n-p type used in
medium-speed switching applica-
tions in data-processing equipment.
JEDEC No. TO-5 package; outline 2N1305
6, Outlines Section. This type is
identical with type 2N1303 except
for the following:
CHARACTERISTICS
Base-to-Emitter Voltage (with collector ma = —10
and base ma = —0.5) —0.15 to —0.35 volt
Collector-to-Emitter Saturation Voltage (with collector ma = —10
and base ma = —0.25) —0.2 max volt
In Common-Base Circuit
Forward-Current-Transfer-Ratio Cutoff Frequency
(with collector-to-base volts = —5 and emitter ma = 1) .... 5min Mc
In Common-Emitter Circuit
TRANSISTOR
Germanium n-p-n type used in
medium-speed switching applica-
tions in data-processing equipment.
JEDEC No. TO-5 package; outline 2N1306
6, Outlines Section. This type is
identical with type 2N1302 except
for the following:
CHARACTERISTICS
Base-to-Emitter Voltage (with collector ma = 10 and base ma
= 0.5) 0.15 to 0.35 volt
Collector-to-Emitter Saturation Voltage
(with collector ma = 10 and base ma = 0.17) 0.2 max volt
208 RCA Transistor Manual
In Common-Base Circuit
In Common-Emitter Circuit
TRANSISTOR
Germanium p-n-p type used in
medium-speed switching applica-
tions in data-processing equipment.
2N1307 JEDEC No. TO-5 package; outline
6, Outlines Section. This type is
identical with type 2N1303 except
for the following:
CHARACTERISTICS
Base-to-Emitter Voltage (with collector ma = —10
and base ma = —0.5) —0.15 to —0.35 volt
Collector-to-Emitter Saturation Voltage
(with collector ma = —10 and base ma = —0.17) —0.2 max volt
In Common-Base Circuit
In Common-Emitter Circuit
TRANSISTOR
Germanium n-p-n type used in
medium-speed switching applica-
tions in data-processing equipment.
2N1308 JEDEC No. TO-5 package; outline
6, Outlines Section. This type is
identical with type 2N1302 except
for the following:
CHARACTERISTICS
Base-to-Emitter Voltage (with collector ma = 10 and base ma
= 0.5) 0.15 to 0.35 volt
Collector-to-Emitter Saturation Voltage
(with collector ma = 10 and base ma = 0.13) 0.2 max volt
In Common-Base Circuit
In Common-Emitter Circuit
TRANSISTOR
Germanium p-n-p type used in
medium-speed switching applica-
tions in data-processing equipment
JEDEC No. TO-5 package; outline 2N1309
6, Outlines Section. This type is
identical with type 2N1303 except
for the following:
CHARACTERISTICS
Base-to-Emitter Voltage (with collector ma = —10
and base ma = —0.5) —0.15 to —0.35 volt
Collector-to-Emitter Saturation Voltage
(with collector ma = —10 and base ma = —0.13) —0.2 max volt
In Common-Bose Circuit
In Common-Emitter Circuit
TRANSISTOR
Germanium p-n-p bidirectional
type used in medium-speed switch-
ing circuits in data-processing 2N1319
equipment. This type is designed
so that the emitter can also function
as a collector and the collector can
also function as an emitter. It is especially useful in bidirectional switching,
core-driver, and ac-signal relay circuits. JEDEC No. TO-5 package; outline 6,
Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —20 max volts
Emitter-to-Base Voltage (with collector open) —20 max volts
Collector-to-Emitter Voltage (with base-to-emitter volts = 1) —20 max volts
Collector Current ±400 max ma
Emitter Current --L-400 max ma
Transistor Dissipation:
At ambient temperatures up to 25°C 120 max mw
At ambient temperature of 55°C 35 max mw
At ambient temperature of 71°C 10 max mw
Ambient-Temperature Range:
Operating —65 to 71 "C
Storage —65 to 85 °C
CHARACTERISTICS
Base-to-Emitter Voltage (with collector ma = —400
and base ma = —26.7) —1.5 max volts
Collector-to-Emitter Saturation Voltage
(with collector ma = —400 and base ma = —26.7) —0.3 max volt
Collector-Cutoff Current (with collector-to-base volts = —12
and emitter current — 0) —6 max µa
In Common-Base Circuit
Forward-Current-Transfer-Ratio Cutoff Frequency
(with collector-to-base volts = —6 and emitter ma = 1) 3min Mc
Collector-to-Base Capacitance (with collector-to-base volts = —6
and emitter current — 0) 30 max Pf
In Common-Emitter Circuit
POWER TRANSISTOR
Germanium p-n-p type used in
a wide variety of switching and am-
2N1358 plifier applications in industrial and
military equipment requiring tran-
sistors having high voltage, current,
and dissipation values. It is used in
power-switching, voltage- and current-regulating, dc-to-dc converter, inverter,
power-supply, and relay- and solenoid-actuating circuits; and in low-frequency
oscillator and audio-amplifier service. This type is designed to provide satis-
factory performance under extreme environmental conditions of temperature,
moisture, and altitude; it is stud-mounted to provide positive heat-sink contact,
and has a cold-weld seal to insure reliable performance under severe environ-
mental conditions. JEDEC No. TO-36 package; outline 14, Outlines Section.
This type is identical with type 2N174 except for the following items:
CHARACTERISTICS
Collector-to-Emitter Breakdown Voltage:
With base short-circuited to emitter and collector amperes
-- —0.3 —70 min volts
With base open and collector amperes = —0.3 —40 min volts
Base-to-Emitter Voltage:
With collector-to-emitter volts = —2 and collector amperes
— —5 —0.65 volt
With collector-to-base volts = —2 and collector amperes = —1.2 —0.35 volt
Emitter-to-Base Voltage (with collector-to-base volts = —80
and emitter current — 0) —0.15 volt
Emitter-Cutoff Current (with emitter-to-base volts = —60
and collector current — 0) —1 ma
Collector-Cutoff Current (with collector-to-base volts = —2
and emitter current — 0) —100
In Common-Base Circuit
Small-Signal Forward-Current-Transfer-Ratio Cutoff Frequency
(with collector-to-base volts = —12 and collector amperes
= —1) 100 kc
In Common-Emitter Circuit
DC Forward Current-Transfer Ratio:
With collector-to-emitter volts = —2 and collector amperes
= —1.2 55
With collector-to-emitter volts = —2 and collector amperes
— —5 35
TRANSISTOR
Germanium p-n-p type used in
high-speed switching circuits in
2N1384 electronic computers. JEDEC No.
TO-11 package; outline 10, Outlines
Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —30 max volts
Collector-to-Emitter Voltage (with base open) —30 max volts
Emitter-to-Base Voltage (with collector open) —1 max volt
Collector Current —500 max ma
Emitter Current 500 max ma
Transistor Dissipation:
At ambient temperatures up to 25°C 240 max mw
At ambient temperatures above 25°C See curve page 80
Ambient-Temperature Range:
Operating and storage —65 to 85
CHARACTERISTICS
Base-to-Emitter Voltage (with collector ma = —200
and base ma = —10) —0.9 max volt
Collector-Cutoff Current (with collector-to-base volts = —3
and emitter current — 0) —8 max
Stored Base Charge (with collector ma = —10 and base ma = —1) 800 max pcoul
Technical Data 211
In Common-Emitter Circuit
TRANSISTOR
Germanium p-n-p type used in
rf and if amplifier circuits; oscillator,
mixer, and converter circuits; and 2N1395
low-level video-amplifier circuits in
industrial and military equipment.
It is used in the design of rf circuits
having high input-circuit efficiency, excellent operating stability, good auto-
matic-gain-control capabilities over a wide range of input-signal levels, and
good signal-to-noise ratio. The drift-field construction provides low base re-
sistance and collector-transition capacitance, and improves performance at high
frequencies. A fourth lead internally connected to the metal case provides
integral shielding which minimizes interlead capacitance and coupling to adja-
cent circuit components. JEDEC No. TO-33 package; outline 13, Outlines Sec-
tion. This type is electrically identical with type 2N274 except for the collector-
characteristic curves shown below and a higher common-emitter small-signal
forward current-transfer ratio of 90.
-50
r
-30
.-20
°AMPERES
BASE MIC
/..---. -HD
TRANSISTOR
Germanium p-n-p type used in
rf and if amplifier circuits; oscillator,
low-level
mixer, andvideo-amplifier
converter circuits;
circuitsand
in 2N1396
industrial and military equipment.
IS It is used in the design of rf circuits
having high input-circuit efficiency, excellent operating stability, good auto-
matic-gain-control capabilities over a wide range of input-signal levels, and
good signal-to-noise ratio. The drift-field construction provides low base re-
212 RCA Transistor Manual
TRANSISTOR
Germanium p-n-p type used in
rf and if amplifier circuits; oscillator,
2N1397 mixer, and converter circuits; and
low-level video-amplifier circuits in
industrial and military equipment
It is used in the design of rf circuits
having high input-circuit efficiency, excellent operating stability, good auto-
matic-gain-control capabilities over a wide range of input-signal levels, and
good signal-to-noise ratio. The drift-field construction provides low base re-
sistance and collector-transition capacitance, and improves performance at high
frequencies. A fourth lead internally connected to the metal case provides
integral shielding which minimizes interlead capacitance and coupling to adja-
cent circuit components. JEDEC No. TO-33 package; outline 13, Outlines
Section. This type is electrically identical with type 2N1023 except for the col-
lector-characteristic curves, which are the same as for type 2N1395, and a
higher common-emitter small-signal forward current-transfer ratio of 90.
POWER TRANSISTOR
Germanium p-n-p type used in a
wide variety of switching and ampli-
2N14'12 fier applications in industrial and
military equipment requiring tran-
sistors having high voltage, current,
and dissipation values. It is used in
power-switching, voltage- and current-regulating, dc-to-dc converter, inverter,
power-supply, and relay- and solenoid-actuating circuits; and in low-frequency
oscillator and audio-amplifier service. This type is designed to provide satis-
factory performance under extreme environmental conditions of temperature,
moisture, and altitude; it is stud-mounted to provide positive heat-sink contact,
and has a cold-weld seal to insure reliable performance under severe environ-
mental conditions. JEDEC No. TO-36 package; outline 14, Outlines Section.
This type is identical with type 2N174 except for the collector-characteristics
curves, which are the same as for type 2N1100, and the following items:
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter-to-base volts = —1.5) —100 max volts
Emitter-to-Base Voltage (with collector open) —60 max volts
CHARACTERISTICS
Collector-to-Emitter Breakdown Voltage (with base short-
circuited to emitter and collector amperes = —0.3) —80 min volts
Emitter-to-Base Voltage (with collector-to-base volts = —80
and emitter current — 0) .. —1 max volt
Collector-to-Emitter Reach-Through Voltage —100 min volts
Collector-Cutoff Current (with collector-to-base volts = —100
and emitter current — 0) —2 ma
POWER TRANSISTOR
Silicon n-p-n type used in a
wide variety of medium-power
switching and amplifier applications 2N1479
in industrial and military equipment.
It is used in power switching, dc-to-
dc converter, inverter, chopper, sole-
noid and relay control circuits; in oscillator, regulator, and pulse-amplifier
circuits; and as a class A or class B push-pull audio and servo amplifier. It
features low saturation resistance, high current and power dissipation, high
beta at high current, and excellent high-temperature performance. JEDEC
No. TO-5 package; outline 6, Outlines Section. This type is identical with type
2N1482 except for the following:
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 60 max volts
Collector-to-Emitter Voltage:
With emitter-to-base volts = 1.5 60 max volts
With base open 40 max volts
CHARACTERISTICS
Collector-to-Emitter Breakdown Voltage (with emitter-to-base
volts = 1.5 and collector ma = 0.25) 60 min volts
Collector-to-Emitter Sustaining Voltage
(with collector ma = 50 and base current — 0) 40 min volts
In Common-Emitter Circuit
POWER TRANSISTOR
Silicon n-p-n type used in a
wide variety of medium-power
switching
in industrial
andand
amplifier
militaryapplications
equipment 2N1480
It is used in power switching, dc-to-
dc converter, inverter, chopper, sole-
noid and relay control circuits; in oscillator, regulator, and pulse-amplifier
circuits, and as a class A or class B push-pull audio and servo amplifier. It
features low saturation resistance, high current and power dissipation, high
beta at high current, and excellent high-temperature performance. JEDEC
No. TO-5 package; outline 6, Outlines Section. This type is identical with type
2N1482 except for the following items:
CHARACTERISTICS
In Common-Emitter Circuit
POWER TRANSISTOR
Silicon n-p-n type used in a
wide variety of medium-power
2N1481 switching and amplifier applications
in industrial and military equipment.
It is used in power switching, dc-to-
dc converter, inverter, chopper, sole-
noid and relay control circuits; in oscillator, regulator, and pulse-amplifier
circuits; and as a class A or class B push-pull audio and servo amplifier. It
features low saturation resistance, high current and power dissipation, high
beta at high current, and excellent high-temperature performance. JEDEC
No. TO-5 package; outline 6, Outlines Section. This type is identical with type
2N1482 except for the following items:
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 60 max volts
Collector-to-Emitter Voltage:
With emitter-to-base volts = 1.5 60 max volts
With base open 40 max volts
CHARACTERISTICS
Collector-to-Emitter Breakdown Voltage
(with emitter-to-base volts = 1.5 and collector ma = 0.25) 60 min volts
Collector-to-Emitter Sustaining Voltage
(with collector ma = 50 and base current = 0) 40 min volts
POWER TRANSISTOR
Silicon n-p-n type used in a
wide variety of medium-power
2N1482 switching and amplifier applications
in industrial and military equipment.
It is used in power switching, dc-to-
dc converter, inverter, chopper, sole-
noid and relay control circuits; in oscillator, regulator, and pulse-amplifier
circuits; and as a class A or class B push-pull audio and servo amplifier. It
features low saturation resistance, high current and power dissipation, high
beta at high current, and excellent high-temperature performance. JEDEC
No. TO-5 package; outline 6, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 100 max volts
Collector-to-Emitter Voltage:
With emitter-to-base volts = 1.5 100 max volts
With base open 55 max volts
Emitter-to-Base Voltage (with collector open) 12 max volts
Collector Current 1.5 max amperes
Emitter Current —1.75 max amperes
Base Current 1max ampere
Transistor Dissipation:
At case temperatures up to 25°C 5max watts
At case temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) and Storage —65 to 200 °C
CHARACTERISTICS
Collector-to-Emitter Breakdown Voltage (with emitter-to-base
volts = 1.5 and collector ma = 0.25) 100 min volts
Collector-to-Emitter Sustaining Voltage
(with collector ma = 50 and base current — 0) 55 min volts
Base-to-Emitter Voltage (with collector-to-emitter volts = 4
and collector ma = 200) 3max volts
Collector-Cutoff Current (with collector-to-base volts = 30
and emitter current — 0) 10 max ita
Emitter-Cutoff Current (with emitter-to-base volts = 12
and collector current — 0) 10 max ma
Technical Data 215
Thermal Resistance:
Junction-to-case 35 max °C/watt
Junction-to-ambient 200 max °C/watt
Thermal Time Constant 10 msec
In Common-Base Circuit
In Common-Emitter Circuit
TYPE 2'N14 8
'2
_ COMMON- EMITTER CIRCUIT, BASE INPUT.
COLLECTOR -TO- EMITTER VOLTS •4
bi - CURVE CASE TEMPERATURE-CC
cc 50 25
a. ---- -65
.
4 40 - --- yr 200 /y ,
///
30 ./..
20 -I
I+
... .."*. 92CS-I0427R2
10
...".../ Vita = 85 volts
......../
--"" --.... Vcc = 12 volts
0 05 1.5 Ri = 50 ohms, 1 watt
BASE-70- EMITTER VOLTS FL: = 700 ohms, 1 watt
92C5-10438 TI R3 = 59 ohms, 2 watts
20
r
BASE MILLIAMPERES •I5
r
:0
r
r
0.2
.---
8 ),)
2)
o
o 20 30 40 50 60 70 80
COLLECTOR-TO-EMITTER VOLTS 92CM-10453T
216 RCA Transistor Manual
POWER TRANSISTOR
Silicon n-p-n type used in a
wide variety of intermediate-power
2N1483 switching and amplifier applications
in industrial and military equipment.
It is used in power switching, dc-to-
dc converter, inverter, chopper, sole-
noid and relay control circuits; in oscillator, regulator, and pulse-amplifier
circuits; and as a class A or class B push-pull audio and servo amplifier. It
features low saturation resistance, high current and power dissipation, high
beta at high current, and excellent high-temperature performance. JEDEC
No. TO-8 package; outline 8, Outlines Secton. This type is identical with type
2N1486 except for the following:
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 60 max volts
Collector-to-Emitter Voltage:
With emitter-to-base volts — 1.5 60 max volts
With base open 40 max volts
CHARACTERISTICS
Collector-to-Emitter Breakdown Voltage (with emitter-to-base
volts = 1.5 and collector ma = 0.25) 60 min volts
Collector-to-Emitter Sustaining Voltage (with collector
ma = 100 and base current — 0) 40 min volts
In Common-Emitter Circuit
POWER TRANSISTOR
Silicon n-p-n type used in a
wide variety of intermediate-power
2N1484 switching and amplifier applications
in industrial and military equipment.
It is used in power switching, dc-to-
dc converter, inverter, chopper, sole-
noid and relay control circuits; in oscillator, regulator, and pulse-amplifier
circuits; and as a class A or class B push-pull audio and servo amplifier. It
features low saturation resistance, high current and power dissipation, high
beta at high current, and excellent high-temperature performance. JEDEC
No. TO-8 package; outline 8, Outlines Section. This type is identical with type
2N1486 except for the following:
CHARACTERISTICS
In Common-Emitter Circuit
POWER TRANSISTOR
Silicon n-p-n type used in a
wide variety of intermediate-power
switching and amplifier applications 2N1485
in industrial and military equipment.
It is used in power switching, dc-to-
dc converter, inverter, chopper, sole-
noid and relay control circuits; in oscillator, regulator, and pulse-amplifier
circuits; and as a class A or class B push-pull audio and servo amplifier. It
features low saturation resistance, high current and power dissipation, high
beta at high current, and excellent high-temperature performance. JEDEC
No. TO-8 package; outline 8, Outlines Section. This type is identical with type
2N1486 except for the following:
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 60 max volts
Collector-to-Emitter Voltage:
With emitter-to-base volts — 1.5 60 max volts
With base open 40 max volts
CHARACTERISTICS
Collector-to-Emitter Breakdown Voltage (with emitter-to-base
volts = 1.5 and collector ma = 0.25) 60 min volts
Collector-to-Emitter Sustaining Voltage (with collector
ma = 100 and base current — 0) 40 min volts
POWER TRANSISTOR
Silicon n-p-n type used in a
wide variety of intermediate-power
switching and amplifier applications 2N1486
in industrial and military equipment.
It is used in power switching, dc-to-
dc converter, inverter, chopper, sole-
noid and relay control circuits; in oscillator, regulator, and pulse-amplifier
circuits; and as a class A or class B push-pull audio and servo amplifier. It
feaures low saturation resistance, high current and power dissipation, high
beta at high current, and excellent high-temperature performance. JEDEC
No. TO-8 package; outline 8, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 100 max volts
Collector-to-Emitter Voltage:
With emitter-to-base volts — 1.5 100 max volts
With base open 55 max volts
Emitter-to-Base Voltage (with collector open) 12 max volts
Collector Current 3max amperes
Emitter Current —3.5 max amperes
Base Current 1.5 max amperes
Transistor Dissipation:
At case temperatures up to 25°C 25 max watts
At case temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) and storage —65 to 200 °C
CHARACTERISTICS
Collector-to-Emitter Breakdown Voltage (with emitter-to-base
volts = 1.5 and collector ma = 0.25) 100 min volts
Collector-to-Emitter Sustaining Voltage (with collector
ma = 100 and base current — 0) 55 min volts
Base-to-Emitter Voltage (with collector-to-emitter volts = 4
and collector ma = 750) 3.5 max volts
Collector-Cutoff Current (with collector-to-base volts = 30
and emitter current — 0) 15 max ja
Emitter-Cutoff Current (with emitter-to-base volts = 12 and
collector current — 0) 15 max
218 RCA Transistor Manual
Thermal Resistance:
Junction-to-case 7max °C/watt
Junction-to-ambient 100 max °C/watt
Thermal Time Constant 10 Insec
In Common-Bose Circuit
In Common-Emitter Circuit
11;40
/
- +
20 /
I '
?
92CS-I0427R2
_... ../ Vea = 9.5 volts
0 0.5 1.5 2 25 3 Vec = 12 volts
R1 = 50 ohms, 1 watt
BASE-TO-EMITTER VOLTS
sus-1044313 R2 = 220 ohms, 1 watt
R3 = 15.9 ohms, 2 watts
2 80
70
r
60
50
40
30
BASE MILLIAMPERES• 29
V5
0
0.5 , t
/
..«.........\
1
, -
0
13 10 20 30 40 50 60 70 80
COLLECTOR-TO-EMITTER VOLTS 92CM-1044511
Technical Data 219
POWER TRANSISTOR
Silicon n-p-n type used in a
wide variety of high-power switch-
ing and amplifier applications in in- 2N1487
dustrial and military equipment. It
is used in power switching, dc-to-dc
converter, inverter, chopper, solenoid
and relay control circuits; in oscillator, regulator, and pulse-amplifier circuits;
and as a class A or class B push-pull audio and servo amplifier. It features
low saturation resistance, high current and power dissipation, high beta at
high current, and excellent high-temperature performance. Package is similar
to JEDEC No. TO-3; outline 23, Outlines Section. This type is identical with
type 2N1490 except for the following:
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 60 max volts
Collector-to-Emitter Voltage:
With emitter-to-base volts — 1.5 60 max volts
With base open 40 max volts
CHARACTERISTICS
Collector-to-Emitter Breakdown Voltage (with emitter-to-base
volts = 1.5 and collector ma = 0.5) 60 min volts
Collector-to-Emitter Sustaining Voltage (with collector ma = 100
and base current — 0) 40 min volts
POWER TRANSISTOR
Silicon n-p-n type used in a
wide variety of high-power switch-
ing and amplifier applications in in- 2N1488
dustrial and military equipment. It
is used in power switching, dc-to-dc
converter, inverter, chopper, solenoid
and relay control circuits; in oscillator, regulator, and pulse-amplifier circuits;
and as a class A or class B push-pull audio and servo amplifier. It features
low saturation resistance, high current and power dissipation, high beta at
high current, and excellent high-temperature performance. Package is similar
to JEDEC No. TO-3; outline 23, Outlines Section. This type is identical with
type 2N1490 except for the following:
CHARACTERISTICS
In Common-Emitter Circuit
POWER TRANSISTOR
Silicon n-p-n type used in a
wide variety of high-power switch-
ing and amplifier applications in in-
2N1489 dustrial and military equipment. It
is used in power switching, dc-to-dc
converter, inverter, chopper, solenoid
and relay control circuits; in oscillator, regulator, and pulse-amplifier circuits;
and as a class A or class B push-pull audio and servo amplifier. It features
low saturation resistance, high current and power dissipation, high beta at
high current, and excellent high-temperature performance. Package is similar
to JEDEC No. TO-3; outline 23, Outlines Section. This type is identical with
type 2N1490 except for the following:
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 60 max volts
Collector-to-Emitter Voltage:
With emitter-to-base volts — 1.5 60 max volts
With base open 40 max volts
CHARACTERISTICS
Collector-to-Emitter Breakdown Voltage (with emitter-to-base
volts = 1.5 and collector ma = 0.5) 60 min volts
Collector-to-Emitter Sustaining Voltage (with collector ma = 100
and base current — 0) 40 min volts
POWER TRANSISTOR
Silicon n-p-n type used in a
wide variety of high-power switch-
ing and amplifier applications in in-
2N1490 dustrial and military equipment. It
is used in power switching, dc-to-dc
converter, inverter, chopper, solenoid
and relay control circuits; in oscillator, regulator, and pulse-amplifier circuits;
and as a class A or class B push-pull audio and servo amplifier. It features
low saturation resistance, high current and power dissipation, high beta at
high current, and excellent high-temperature performance. Package is similar
to JEDEC No. TO-3; outline 23, Outlines Section.
MAXIMUM RATINGS
CHARACTERISTICS
Collector-to-Emitter Breakdown Voltage (with emitter-to-base
volts = 1.5 and collector ma = 0.5) 100 min volts
Collector-to-Emitter Sustaining Voltage (with collector ma =. 100
and base current — 0) 55 min volts
Base-to-Emitter Voltage (with collector-to-emitter volts = 4
and collector amperes = 1.5) 3.5 max volts
Collector-Cutoff Current (with collector-to-base volts = 30
and emitter current — 0) 25 max
Emitter-Cutoff Current (with emitter-to-base volts = 10 and
collector current — 0) 25 max
Thermal Resistance:
Junction-to-mounting-flange 2.33 max °C/watt
Thermal Time Constant 12 msec
Technical Data 221
In Common-Base Circuit
In Common-Emitter Circuit
TYPE 2N1490
-COMMON- EMITTER CIRCUIT, BASE INPUT,
MOUNTING- FLANGE TEMPERATURE •25.c
225 I
200
75
150
125
00
BASE MILLIAMPERES. 75
o
O 10 20 30 40 50 60 70 80
COLLECTOR- TO- EMITTER VOLTS 92CM-10477T
222 RCA Transistor Manual
TRANSISTOR
Silicon n-p-n type used in a
wide variety of high-frequency and
2N1491 vhf applications in industrial and
military equipment. It is used in
large-signal power-amplifier, video-
amplifier, oscillator, and mixer cir-
cuits over a wide temperature range. This type can also be used in switching
service in circuits requiring transistors having high voltage, current, and dissi-
pation values. JEDEC No. TO-39 package; outline 32, Outlines Section. This
type is identical with type 2N1493 except for the following items:
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 30 max volts
Collector-to-Emitter Voltage (with emitter-to-base volts = 0.5) 30 max volts
Emitter-to-Base Voltage (with collector open) 1max volt
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector ma = 0.1
and emitter current — 0) 30 min volts
In Common-Base Circuit
In Common-Emitter Circuit
TRANSISTOR
Silicon n-p-n type used in a
wide variety of high-frequency and
21\1 14'92 vhf applications in industrial and
military equipment. It is used in
large-signal power-amplifier, video-
amplifier, oscillator, and mixer cir-
cuits over a wide temperature range. This type can also be used in switching
service in circuits requiring transistors having high voltage, current, and dissi-
pation values. JEDEC No. TO-39 package; outline 32, Outlines Section. This
type is identical with type 2N1493 except for the following items:
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 60 max volts
Collector-to-Emitter Voltage (with emitter-to-base volts = 0.5) 60 max volts
Emitter-to-Base Voltage (with collector open) 2max volts
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector ma = 0.1
and emitter current — 0) 60 min volts
In Common-Bose Circuit
In Common-Emitter Circuit
TRANSISTOR
Silicon n-p-n type used in a
wide variety of high-frequency and
vhf applications in industrial and 2N1493
military equipment. It is used in
large-signal power-amplifier, video-
amplifier, oscillator, and mixer cir-
cuits over a wide temperature range. This type can also be used in switching
service in circuits requiring transistors having high voltage, current, and dissi-
pation values. JEDEC No. TO-39 package; outline 32, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 100 max volts
Collector-to-Emitter Voltage (with emitter-to-base volts = 0.5) 100 max volts
Emitter-to-Base Voltage (with collector open) 4.5 max volts
Collector Current 50 max ma
Emitter Current —50 max ma
Transistor Dissipation:
At case temperatures up to 25°C 3max watts
At ambient temperatures up to 25°C 0.5 max watt
At case or ambient temperatures above 25°C See curve page 80
Temperature Range:
Operating (Junction) and storage —65 to 175 °C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector ma = 0.1
and emitter current — 0) 100 min volts
Emitter-Cutoff Current (with emitter-to-base volts = 0.5
and collector current — 0) 100 max µa
Collector-Cutoff Current (with collector-to-base volts = 12
and emitter current — 0) 10 max µa
Thermal Resistance:
Junction-to-case 50 max •C/watt
In Common-Bose Circuit
Y.
Ij 20
o
0 02 04 06 08
BASE-TO-EMITTER VOLTS O 0.2 . 04 0.6 08 1.0 1.2
92CS-105013T BASE MILLIAMPERES 92C5-10519T
224 RCA Transistor Manual
set tittleteeeeS" 2
1.0
os
0.6
0.4
0.2
10 20 30 40 50 60
COLLECTOR-TO-EMITTER VOLTS 112CM-10507T
POWER TRANSISTOR
Silicon n-p-n type used in a
wide variety of high-power switch-
ing and amplifier applications in in-
2N1511 dustrial and military equipment. It
is used in power switching, dc-to-dc
converter, inverter, chopper, solenoid e
and relay control circuits; in oscillator, regulator, and pulse-amplifier circuits;
and as a class A or class B push-pull audio and servo amplifier. It features
low saturation resistance, high current and power dissipation, high beta at
high current, and excellent high-temperature performance. This type is stud-
mounted to provide positive heat-sink contact and has a cold-weld seal.
JEDEC No. TO-36 package; outline 14, Outlines Section. This type is electrically
identical with type 2N1487.
POWER TRANSISTOR
Silicon n-p-n type used in a
wide variety of high-power switch-
2N1512 ing and amplifier applications in in-
dustrial and military equipment. It
is used in power switching, dc-to-dc
converter, inverter, chopper, solenoid a
and relay control circuits; in oscillator, regulator, and pulse-amplifier circuits;
and as a class A or class B push-pull audio and servo amplifier. It features
low saturation resistance, high current and power dissipation, high beta at
high current, and excellent high-temperature performance. This type is stud-
mounted to provide positive heat-sink contact and has a cold-weld seal.
JEDEC No. TO-36 package; outline 14, Outlines Section. This type is electrically
identical with type 2N14
Technical Data 225
POWER TRANSISTOR
Silicon n-p-n type used in a
wide variety of high-power switch-
ing and amplifier applications in in - 2N1513
dustrial and military equipment. It
is used in power switching, dc-to-dc
converter, inverter, chopper, solenoid
and relay control circuits; in oscillator, regulator, and pulse-amplifier circuits;
and as a class A or class B push-pull audio and servo amplifier. It features
low saturation resistance, high current and power dissipation, high beta at
high current, and excellent high-temperature performance. This type is stud-
mounted to provide positive heat-sink contact and has a cold-weld seal.
JEDEC No. TO-36 package; outline 14, Outlines Section. This type is electrically
identical with type 2N1489.
POWER TRANSISTOR
Silicon n-p-n type used in a
wide variety of high-power switch-
dustrial
ing and amplifier
and military
applications
equipment.
in in-
It 2N1514
is used in power switching, dc-to-dc
a converter, inverter, chopper, solenoid
and relay control circuits; in oscillator, regulator, and pulse-amplifier circuits;
and as a class A or class B push-pull audio and servo amplifier. It features
low saturation resistance, high current and power dissipation, high beta at
high current, and excellent high-temperature performance. This type is stud-
mounted to provide positive heat-sink contact and has a cold-weld seal.
JEDEC No. TO-36 package; outline 14, Outlines Section. This type is electrically
identical with type 2N1490.
TRANSISTOR
Germanium p-n-p type used in
intermediate-frequency amplifier ap-
plications in battery-operated AM
portable radio receivers. JEDEC No. 2N1524
TO-1 package; outline 4, Outlines
Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —24 max volts
Emitter-to-Base Voltage (with collector open) —0.5 max volt
Collector Current —10 max ma
Emitter Current 10 max ma
Transistor Dissipation:
At ambient temperatures up to 25°C 80 max mw
At ambient temperature of 55°C
50 max mw
At ambient temperature of 71°C 23 max mw
Ambient-Temperature Range:
Operating and Storage —65 to 85 •C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with emitter-to-base
volts = —0.5 and collector iza = —50) —24 min volts
Collector-Cutoff Current (with collector-to-base volts = —12
and emitter current — 0) —16 max ma
Emitter-Cutoff Current (with emitter-to-base volts = —0.5
and collector current — 0) —16 max µa
Thermal Resistance:
Junction-to-ambient 0.4 °C/mw
226 RCA Transistor Manual
In Common-Base Circuit
In Common-Emitter Circuit
TRANSISTOR
Germanium p-n-p type used in
intermediate-frequency amplifier ap-
2N1525 plications in battery-operated AM
portable radio receivers. JEDEC No.
TO-40 package; outline 15, Outlines
Section. This type is electrically E a
identical with type 2N1524.
Technical Data 227
TRANSISTOR
Germanium p-n-p type used in
converter (mixer-oscillator) appli-
cations in battery-operated portable 2N1526
radio receivers. In acommon-emitter
circuit, this type is capable of pro-
viding a useful conversion power
gain of 34.5 db. JEDEC No. TO-1 package; outline 4, Outlines Section. This
type is identical with type 2N1524 except for the following items:
CHARACTERISTICS
In Common-Emitter Circuit
TRANSISTOR
Germanium p-n-p type used in
converter (mixer-oscillator) appli-
cations in battery-operated AM
portable radio receivers. This type 2N1527
is electrically identical with type
2N1526.
TRANSISTOR
Germanium n-p-n type used in
medium-speed switching applica-
tions in data-processing equipment. 2N1605
These transistors are n-p-n comple-
ments of the p-n-p types 2N404 and 2N1605A
2N404A. JEDEC No. TO-5 package;
outline 6, Outlines Section.
MAXIMUM RATINGS
2N1605 2N1605A
Collector-to-Base Voltage (with emitter open) 25 max 40 max volts
Collector-to-Emitter Voltage (with base-to-
emitter volts = —1) 24 max 40 max volts
Emitter-to-Base Voltage (with collector open) 12 max 12 max volts
Collector Current 100 max 100 max ma
Emitter Current —100 max —100 max ma
Transistor Dissipation:
At ambient temperatures up to 25°C 150 max 200 max mw
At ambient temperatures above 25°C See curve page 80
Ambient Temperature Range:
Operating and storage —65 to 100 —65 to 100 "C
Lead Temperature (for 10 seconds maximum) 235 max 235 max °C
228 RCA Transistor Manual
CHARACTER!STICS
2N1605 2N1605A
Collector-to-Emitter Saturation Voltage:
With collector ma = 12 and base ma = 0.4 .., 0.15 max 0.15 max volt
With collector ma = 24 and base ma = 1 0.2 max 0.2 max volt
Base-to-Emitter Voltage:
With collector ma = 12 and base ma = 0.4 0.35 max 0.35 max volt
With collector ma = 24 and base ma = 1 0.4 max 0.4 max volt
Collector-Cutoff Current:
With collector-to-base volts = 12 and
emitter current = 0 5max — lia
With collector-to-base volts = 40
and emitter current = 0 — 10 max µa
Total Stored Charee (with collector-to-base
volts = 5.25, collector ma = 10, and base
ma = 1) 1400 1400 max pcoul
In Common-Base Circuit
2N1605 2N1605A
Collector-to-Base Capacitance (with collector-
to-base volts = 6 and collector current = 0) 20 max 20 max Pf
Forward-Current-Transfer-Ratio Cutoff
Frequency (with collector-to-base volts
= 6 and emitter current = 1) 4min 4min Mc
In Common-Emitter Circuit
TRANSISTOR
Silicon n-p-n type used in a
wide variety of small-signal and
2N1613 medium-power applications in in-
dustrial and military equipment. It
can be used in rf service as an am-
plifier, mixer, oscillator, and con-
verter; in af service for small- and large-signal driver and power applications;
in switching service for high-speed switching circuits requiring transistors
having high voltage, high dissipation, high pulse beta, low output capacitance,
and exceptionally low noise and leakage characteristics. JEDEC No. TO-5 pack-
age; outline 6, Outlines Section. For curve of typical transfer characteristics,
refer to type 2N2102.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 75 max volts
Collector-to-Emitter Voltage (with external base-to-emitter
resistance = 10 ohms or less) 50 max volts
Emitter-to-Base Voltage (with collector open) 7max volts
Collector Current 1max ampere
Transistor Dissipation:
At case temperatures up to 2s.c 3max watts
At ambient temperatures up to 25°C 0.8 max watt
At case or ambient temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) —65 to 200 °C
Storage —65 to 300 "V
Lead Temperature (for 10 seconds maximum) 255 max °C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage
(with collector ma = 0.1 and emitter current — 0) 75 min volts
Emitter-to-Base Breakdown Voltage
(with emitter ma = 0.25 and collector current — 0) 7min volts
Collector-to-Emitter Reach-Through Voltage
(with emitter-to-base volts = 1.5 and collector ma = 0.11 75 min volts
Technical Data 229
In Common-Base Circuit
in Common-Emitter Circuit
ElO _
COMMON-EMITTER CIRCUIT, BASE IN PUT.
AMBIENT TEMPERATURE=25•C
lu
o.
2 8
-a
o
t 4
30
u 2 15
TYPE 2N 1613
COMMON —EMITTER CIRCUIT, BASE INPUT.
— AMBIENT TEMPERATURE. 25•C
tne
a.
.4
2 500 2Z e V% 12 10
8
2400 6
o 4
c.) 300
u 200
0
100
BASE MILLIAMPERES. 0
o 4 6 8 10 2
COLLECTOR-To -EH I
TTER VOLTS 92CJI•11111197
TRANSISTOR
Germanium p-n-p type used in
radio-frequency amplifier applica-
2N1631 tions in battery-operated AM port-
able radio receivers. In an unneu-
tralized rf amplifier circuit, this type
can provide a power gain of 25.6 db
at 1.5 megacycles. JEDEC No. TO-40 package; outline 15, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —34 max volts
Emitter-to-Base Voltage (with collector open) —0.5 max volt
Collector Current —10 max ma
Emitter Current 10 max ma
Transistor Dissipation:
At ambient temperatures up to 25°C 80 max mw
At ambient temperature of 55°C 50 max mw
At ambient temperature of 71°C 35 max raw
Ambient-Temperature Range:
Operating —65 to 71 °C
Storage —65 to 85 °C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector µa = —50
and emitter current — 0) —34 min volts
Collector-Cutoff Current (with collector-to-base volts = —12
and emitter current — 0) —16 max µa
Emitter-Cutoff Current (with emitter-to-base volts = —0.5
and collector current — 0) —16 max µa
Thermal Resistance:
Junction-to-ambient 0.4 max °C/mw
In Common-Base Circuit
In Common-Emitter Circuit
TYPICAL OPERATION
DC Collector-Supply Voltage —6 —9 —12 volt..
DC Collector-to-Emitter Voltage —5.7 —8.5 —11 volts
DC Collector Current —1 —1 —1 ma
Signal Frequency 1.5 1.5 1.5 Mc
Input Resistance (with ac output circuit shorted) • 520 750 1000 ohms
Output Resistance (with ac input circuit shorted) . 0.065 0.11 0.18 megohm
Extrinsic Transconductance 36000 36000 36000 µmhos
Collector-to-Base Capacitance 2.2 2.1 2
Maximum Power Gain 40.4 44.3 47.7 cg
Useful Power Gain:
In unneutralized circuit 25.3 25.5 25.6 db
TRANSISTOR
Germanium p-n-p type used in
radio-frequency amplifier applica-
tions in battery-operated AM port- 2N1632
able radio receivers. In an unneu-
c tralized rf amplifier circuit, this type
can provide a power gain of 25.6 db
at 1.5 megacycles. JEDEC No. TO-1 package; outline 4, Outlines Section. This
type is electrically identical with type 2N1631.
TRANSISTOR
Germanium p-n-p type used in
radio-frequency amplifier applica-
tions in AM automobile radio re-
2N1637 ceivers. In an unneutralized circuit,
this type is capable of providing a
useful power gain of 25.6 db at 1
megacycle. JEDEC No. TO-1 package; outline 4, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —34 max volts
Emitter-to-Base Voltage (with collector open) —1.5 max volts
Collector Current —10 max ma
Emitter Current 10 max rna
Transistor Dissipation:
At ambient temperatures up to 25 .0 80 max mw
At ambient temperature of 55°C 50 max mw
At ambient temperature of 71°C 35 max mw
Ambient-Temperature Range:
Operating —65 to 71 oc
Storage —65 to 85 "C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage
(with collector µa = —50 and emitter current — 0) —34 min volts
Collector-Cutoff Current (with collector-to-base volts = —12
and emitter current = 0) —5 max µa
Emitter-Cutoff Current (with emitter-to-base volts = —1.5
and collector current — 0) —15 max pa
Thermal Resistance:
Junction-to-ambient 0.4 max °C/mw
TYPICAL OPERATION
DC Collector-to-Emitter Voltage —54 —11.2 volts
DC Collector Current —1 —1 ma
Signal Frequency 1.5 1.5 Mc
Input Resistance (with ac output circuit shorted) 520 1000 ohms
Output Resistance (with ac input circuit shorted) 0.065 0.18 megohm
Maximum Power Gain 40.4 47.7 db
Maximum Useful Power Gain:
In unneutralized circuit 25.3 25.6 db
Technical Data 233
TRANSISTOR
(7)9
Germanium p-n-p type used in
262.5-kilocycle or 455-kilocycle in-
termediate-frequency amplifier ap- 2N1638
plications in AM automobile radio
receivers. In an unneutralized cir-
cuit, this type is capable of provid-
ing auseful power gain of 36.6 db at 262.5 kilocycles. JEDEC No. TO-1 package;
outline 4, Outlines Section. This type is identical with type 2N1637 except for
the following:
MAXIMUM RATINGS
Emitter-to-Base Voltage (with collector open) —0.5 max volt
CHARACTERISTICS
Collector-Cutoff Current (with collector-to-base volts = —12
and emitter current — 0) —7 max Pa
Emitter-Cutoff Current (with emitter-to-base volts = —0.5
and collector current — 0) —8 max pa
In Common-Base Circuit
In Common-Emitter Circuit
TRANSISTOR
Germanium p-n-p type used in
converter (mixer-oscillator) appli-
ceivers.
cations in
In AM
an unneutralized
automobile radio
circuit,
re- 2N1639
this type can provide a useful con-
version power gain of 37 db at 1.5
megacycles. JEDEC No. TO-1 package; outline 4, Outlines Section. This type
is identical with type 2N1637 except for the following items:
MAXIMUM RATINGS
Emitter-to-Base Voltage (with collector open) —05 max volt
CHARACTERISTICS
Collector-Cutoff Current (with collector-to-base volts = —12
and emitter current = 0) —7 µa
Emitter-Cutoff Current (with emitter-to-base volts = —0.5
and collector current — 0) —8
In Common-Base Circuit
In Common-Emitter Circuit
TYPICAL OPERATION
DC Collector-to-Emitter Voltage —5 —11 volts
DC Collector Current —0.65 —0.65 ma
Signal Frequency 1.5 1.5 Mc
Input Resistance 1850 2200 ohms
Output Resistance at 252.5 kilocycles 0.1 0.2 megohm
EMS Base-to-Emitter Oscillator-Injection Voltage 100 100 mv
Useful Conversion Power Gain 35.4 37 db
TRANSISTOR
Germanium p-n-p type used in
high-speed switching applications in
2N1683 data-processing equipment. JEDEC
No. TO-5 package; outline 6, Out-
lines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —13 max volts
Collector-to-Emitter Voltage (with base open) —12 max volts
Emitter-to-Base Voltage (with collector open) —4 max volts
Collector Current —100 max ma
Emitter Current 100 max ma
Transistor Dissipation:
At ambient temperatures up to 25°C 150 max raw
At ambient temperatures above 25°C See curve page 80
Ambient-Temperature Range:
Operating and storage —65 to 85 ''C
Lead Temperature (for 10 seconds maximum) 255 max °C
CHARACTERISTICS
Base-to-Emitter Voltage (with collector ma = —40 and base
ma = —1) —0.6 max volt
Collector-Cutoff Current (with collector volts = —6
and emitter current = 0) —3 max ga
Total Stored Charge:
With collector ma = —10 and base ma = —0.4 160 max pcoul
With collector ma = —40 and base ma = —1.6 410 max pcoul
In Common-Bose Circuit
In Common-Emitter Circuit
POWER TRANSISTOR
Silicon n-p-n type used in a
wide variety of switching and ampli-
2N 700
1 fier applications in industrial equip-
ment. It is used in power switching,
dc-to-de converter, inverter, chop-
per, and relay-control circuits; in
oscillator, voltage- and current-regulator circuits; and in de and servo ampli-
fier circuits. JEDEC No. TO-5 package; outline 6, Outlines Section.
Technical Data 235
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 60 max volts
Collector-to-Emitter Voltage:
With emitter-to-base volts — 1.5 60 max volts
With base open 40 max volts
Emitter-to-Base Voltage 6max volts
Collector Current 1max ampere
Base Current 0.75 max ampere
Transistor Dissipation:
At case temperatures up to 25°C 5max watts
At case temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) and storage —65 to 200 °C
Lead Temperature (for 10 seconds maximum) 255 max °C
CHARACTERISTICS
Collector-to-Emitter Breakdown Voltage
(with emitter-to-base volts = 1.5 and collector ma = 0.5) 60 min volts
Collector-to-Emitter Sustaining Voltage
(with collector ma -= 50 and base current — 0) 40 min volts
Base-to-Emitter Voltage (with collector-to-emitter volts = 4
and collector ma = 100) 2max volts
Collector-Cutoff Current (with collector-to-base volts = 30
and emitter current — 0) 75 max eta
Emitter-Cutoff Current (with emitter-to-base volts = 6
and collector current — 0) 25 max ¡sa
Thermal Resistance:
Junction-to-case 35 max °C/watt
Junction-to-ambient 200 max °C/watt
Thermal Time Constant 10 msec
In Common-Base Circuit
In Common-Emitter Circuit
BASE MILLIAMPERES•I0
5 .......
I
0
._
o LI) 40 50 60 70 80
COLLECTOR-TO-EMITTER \Fogs S2CM -I125611
TYPE 2NI700 1
g30 / r
i.•
e 20
1„, , 92CS-10427R2
10
_...........,./ Vas = 8.5 volts
Vcc = 12 volts
O 05 1.5 2 Ri = 50 ohms, 1 watt
IASE-TO-EMITTER VOLTS Rs = 700 ohms, 1 watt
9PCS-1111411T 59 ohms, 2 watts
POWER TRANSISTOR
Silicon n-p-n type used in a
wide variety of switching and ampli-
fier applications in industrial equip-
2N1701 ment. It is used in power-switching,
de-to-dc converter, inverter, chop-
per, and relay-control circuits; in
oscillator, voltage- and current-regulator circuits; and in de and servo ampli-
fier circuits. JEDEC No. TO-8 package; outline 8, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 60 max volts
Collector-to-Emitter Voltage:
With emitter-to-base volts - 1.5 60 max volts
With base open 40 max volts
Emitter-to-Base Voltage (with collector open) 6max volts
Collector Current 2.5 max amperes
Base Current 1max ampere
Transistor Dissipation:
At case temperatures up to 25°C 25 max watts
At case temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) and storage -65 to 200 °C
Lead Temperature (for 10 seconds maximum) 235 max °C
CHARACTERISTICS
Collector-to-Emitter Breakdown Voltage (with emitter-to-base
volts = 1.5 and collector ma r= 0.75) 60 min volts
Collector-to-Emitter Sustaining Voltage (with collector ma
= 100 and base current - 0) 40 min volts
Base-to-Emitter Voltage (with collector-to-base volts = 4
and collector ma = 300) 3max volts
Collector-Cutoff Current (with collector-to-base volts = 30
and emitter current - 0) 100 max (la
Emitter-Cutoff Current (with emitter-to-base volts = 6
and collector current - 0) 50 max aa
Thermal Resistance:
Junction-to-case 7max •C/watt
Junction-to-ambient 100 max •C/watt
Thermal Time Constant 10 m sec
In Common-Base Circuit
In Common-Emitter Circuit
TYPE 2NI701
_COMMON-EMITTER CIRCUIT. BASE INPUT.
COLLECTOR -TO-EMITTER VOLTS •4
CURVE CASE TEMPERATURE —%
25
---- -65
175
- +
_.....r" ....
92C5-10427R2
o 0.5 1.5
BASE-TO -EMITTER VOLTS
MS-11571T
Vas = 9.5 volts
Vcc = 12 volts
Ri r_-_ 50 ohms, 1 watt
R2 = 220 ohms, 1 watt
Ba = 15.9 ohms, 2 watts
30
BASE MILLIAMPERES 20
15
0.5 10_,;______
5
2
I 0
o --
EV 30 40 50 60 70 80
COLLECTOR-TO- EMITTER VOLTS 112CM-1156271
238 RCA Transistor Manual
POWER TRANSISTOR
Silicon n-p-n type used in a
wide variety of switching and ampli-
fier applications in industrial equip-
2N1702 ment. It is used in power-switching,
dc-to-dc converter, inverter, chop-
per, and relay-control circuits; in
oscillator, voltage- and current-regulator circuits; and in de and servo ampli-
fier circuits. Package is similar to JEDEC No. TO-3; outline 23, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 60 max volts
Collector-to-Emitter Voltage:
With emitter-to-base volts — 1.5 60 max volts
With base open 40 max volts
Emitter-to-Base Voltage (with collector open) 6max volts
Collector Current 5max amperes
Base Current 2.5 max amperes
Transistor Dissipation:
At mounting-flange temperatures up to 25°C 75 max watts
At mounting-flange temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) and storage —65 to 200 °C
CHARACTERISTICS
Collector-to-Emitter Breakdown Voltage (with emitter-to-base
volts = 1.5 and collector ma — 1) 60 min volts
Collector-to-Emitter Sustaining Voltage (with collector ma = 100
and base current = 0) 40 min volts
Base-to-Emitter Voltage (with collector-to-emitter volts = 4
and collector ma = 800) 4max volts
Collector-Cutoff Current (with collector-to-base volts = 30
and emitter current = 0) 200 max
Emitter-Cutoff Current (with emitter-to-base volts = 6
and collector current — 0) 100 max aa
Thermal Resistance:
Junction-to-mounting-flange 2.33 max °C/watt
Thermal Time Constant 12 msec
I
n Common- Base Circuit
In Common-Emitter Circuit
/ / - +
92 CS - 10427 R2
VBB = 8.5 volts
Veo = 12 volts
05 1.5 = 50 ohms, 1 watt
BASE-TO- EMITTER VOLTS Rs = 30 ohms, 1 watt
BICS -11567T Rs = 7.8 ohms, 2 watts
Technical Data 239
4 500
400
300
250
l
ie 3
BASE MILLIAMPERES •200
cc -,......
o 160
u 120
w2
-1 80
o ...... . 60
rao ,
20
10
5
20 30 40 50 60 70 80
COLLECTOR-TO-EMITTER VOLTS 92 ,, -11564T1
POWER TRANSISTOR
Silicon n-p-n type used in a
wide variety of switching and ampli-
fier applications in industrial equip- 2N1703
ment. It is used in power-switching,
dc-to-dc converter, inverter, chop-
per, and relay-control circuits; in
oscillator, voltage- and current-regulator circuits; and in de and servo ampli-
fier circuits. This type is stud-mounted to provide positive heat-sink contact
and has acold-weld seal. JEDEC No. TO-36 package; outline 14, Outlines Sec-
tion. This type is electrically identical with type 2N1702.
TRANSISTOR
Silicon n-p-n type used in very-
high-speed applications in equip-
ments which require high reliability
and high packaging densities. JEDEC 2N1708
C No. TO-46 package; outline 18, Out-
lines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 25 max volts
Collector-to-Emitter Voltage (with external base-to-emitter
resistance = 1000 ohms and load resistance = 100 ohms) 12 max volts
Emitter-to-Base Voltage (with collector open) 3max volts
240 RCA Transistor Manual
CHARACTERISTICS
Base-to-Emitter Saturation Voltage (with collector ma . 10
and base ma = 1) 0.7 to 0.9 volt
Collector-to-Emitter Saturation Voltage:
With collector ma = 10 and base ma — 1 0.22 max volt
With collector ma = 50 and base ma — 5 0.35 max volt
Collector-Cutoff Current (with collector-to-base volts = 15
and emitter current = 0) 0.025 max ma
In Common-Base Circuit
In Common-Emitter Circuit
TRANSISTOR
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 75 max volts
Collector-to-Emitter Voltage (with external base-to-emitter
resistance = 10 ohms or less) 50 max volts
Emitter-to-Base Voltage (with collector open) 7max volts
Collector Current 1max ampere
Transistor Dissipation:
At case temperatures up to 25°C 3max watts
At ambient temperatures up to 25°C 0.8 max watt
At case or ambient temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) —65 to 200 °C
Storage —65 to 300 °C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector ma = 0.1
and emitter current — 0) 75 min volts
Emitter-to-Base Breakdown Voltage (with emitter ma = 0.1
and collector current — 0) 7min volts
Collector-to-Emitter Reach-Through Voltage (with emitter-to-
base volts = 1.5 and collector ma = 0.1) 75 min volts
Collector-to-Emitter Sustaining Voltage (with external base-to-
emitter resistance = 10 ohms or less and pulse collector ma
= 100) 50 min volts
Base-to-Emitter Saturation Voltage (with collector ma = 150
and base ma = 15) 1.3 max volts
Collector-to-Emitter Saturation Voltage (with collector ma
= 150 and base ma = 15) 1.5 max volts
Collector-Cutoff Current (with collector-to-base volts = 60
and emitter current — 0) 0.01 max pa
Technical Data 241
CO)
a.
500
e e te
7.1
6
400
re
3
o
300
2
8200
100
M 8 05
0.0 4
I:
BASE MICROAMPERES*0
10 20 30 40 50 60 70
COLLECTOR-TO-EMITTER VOLTS
92n-11630T
In Common-Base Circuit
In Common-Emitter Circuit
POWER TRANSISTOR
Silicon n-p-n type used in a
wide variety of intermediate-power
2N1768 switching and amplifier applications
in industrial equipment requiring
transistors having high voltage, cur-
E
rent, and dissipation values. It is
used in power switching, dc-to-dc converter, inverter, chopper, and relay
actuating circuits; in voltage- and current-regulator circuits; and in de and
servo amplifier circuits. This type has an offset pedestal, stud-mount arrange-
ment which provides positive heat-sink contact. Outline 28, Outlines Section.
This type is electrically identical with type 2N1486 except for the following
items:
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 60 max volts
Collector-to-Emitter Voltage:
With emitter-to-base volts — 1.5 60 max volts
With base open 40 max volts
Transistor Dissipation:
At case temperatures up to 25°C 40 max watts
At case temperatures above 25°C See curve page 80
Lead Temperature (for 10 seconds maximum) 255 max °C
CHARACTERISTICS
Collector-to-Emitter Breakdown Voltage (with emitter-to-base
volts = 1.5 and collector ma = 0.25) 60 min volts
Collector-to-Emitter Sustaining Voltage (with collector ma = 100
and base current — 0) 40 min volts
Thermal Resistance:
Junction-to-case 4.375 max °C/watt
Junction-to-ambient 175 max °C/watt
POWER TRANSISTOR
Silicon n-p-n type used in a
wide variety of intermediate-power
2N1769 in
switching
industrial
and amplifier
equipmentapplications
requiring
transistors having high voltage, cur-
rent, and dissipation values. It is
used in power-switching, dc-to-dc converter, inverter, chopper, and relay
actuating circuits; in voltage- and current-regulator circuits; and in de and
servo amplifier circuits. This type has an offset pedestal, stud-mount arrange-
ment which provides positive heat-sink contact. Outline 28, Outlines Section.
This type is identical with type 2N1486 except for the following items:
MAXIMUM RATINGS
Transistor Dissipation:
At case temperatures up to 25°C 40 max watts
At case temperatures above 25°C See curve page 80
Lead Temperature (for 10 seconds maximum) 255 max °C
CHARACTERISTICS
Thermal Resistance:
Junction-to-case 4.375 max °C/watt
Junction-to-ambient 175 max °C/watt
Technical Data 243
G
TI&L, !SHORT
TERMINAL!
Diffused-junction n-p-n-p type
used in a wide variety of power-
control and power-switching appli-
cations in industrial and military 2N1842A
A
equipment. This type has a maxi-
(STUD) mum peak forward blocking voltage
of 25 volts and a forward-current capability of 10 amperes (average value)
or 16 amperes (rms value). This type is designed to meet stringent military
environmental and mechanical specifications. The special high-strength copper-
alloy stud can withstand an installing torque up to 50 inch-pounds. JEDEC
No. TO-48 package; outline 19, Outlines Section.
MAXIMUM RATINGS
For sinusoidal ac supply voltage of 50 to
400 cps, with resistive or inductive load
CHARACTERISTICS
Forward Breakover Voltage (at case temperature of 125°C) 25 min volts
Average Forward Voltage Drop (at case temperature of 80°C) 1.2 max volts
DC Gate-Trigger Voltage:
At case temperature of —40°C 3.5 max volts
At case temperature of —65°C 3.7 max volts
At case temperature of 100°C 0.3 min volt
At case temperature of 125°C 0.25 min volt
Average Blocking Current (at case temperature of 125°C) :
Forward 22.5 max ma
Reverse 22.5 max ma
DC Gate-Trigger Current (at case temperature of 125°C) 45 max ma
Holding Current (at case temperature of 125°C) 8 ma
Thermal Resistance (junction-to-case) 2max °C/watt
0150
TYPE 2N1842A
-WAD;
CURRENT
RESISTIVE
WAVEFORM
SINUSOIDAL
OR INDUCTIVE IC\ -
e TYPE 2N1842A
SUPPLY FREQUENCY •60 CPS SINE WAVE
CASE TEMPERATURE •ee C
uf
. 04—i--48Cr • 150 _RESISTIVE LOAD
REPETITIVE PEAK REVERSE VOLTAGE —
I CONDUCTION •MAXIMUM -RATED VALUE
ANGLE 125 GE FORWARD CURRENT •MAX MUM —
t! ,.. TED VALUE
I ffi
ci100
«15 c
m°-75 — 30.60.90'120.18e ,
u 75
CONDUCTION ANGLE
aid 5 50
e.12
4.) 2 ▪ 25
Ui
a.
O
5 lO ID SU ioZ 4 5 8100
AVERAGE FORWARD CURRENT—AMPERES SURGE CURRENT DURATION—CYCLES
92C3-11905T2 92CS-11904TI
244 RCA Transistor Manual
o U 40 60 8G lOO 120 14 0
WENT TEMPERATURE INSTANTANEOUS FORWARD VOLTAGE DROP—VOLTS
szcs-1}90771 92CS-11912A
1
TO TRIGGEF UNI' &
To
7.425ozeUrf
1 i re41"-
1 4.. O
.15 ^50 -25 0 25 50 75 100 125 -55 O 05 50 75 lOO 125 I
CASE TEMPERATURE—'t CASE TEMPERATURE—t
tacs-asoora 92.E.5-118061Z
11080
TERMINAL'
MAXIMUM RATINGS
Por sinusoidal ac supply voltage of 50 to
400 cps, with resistive or inductive load
CHARACTERISTICS
Forward Breakover Voltage (at case temperature of 125°C) 50 min volts
Average Blocking Current (at case temperature of 125°C) :
Forward 19 max ma
Reverse 19 max ma
1Ef4a At(
(SHORT
o
MAXIMUM RATINGS
For sinusoidal ac supply voltage of 50 to
400 cps, with resistive or inductive toad
CHARACTERISTICS
Forward Breakover Voltage (at case temperature of 125°C) 100 min volts
Average Blocking Current (at case temperature of 125°C) :
Forward 12.5 max ma
Reverse 12.5 max Ina
414% emu
Diffused-junction n-p-n-p type
used in a wide variety of power-
control and power-switching appli- 2N1845A
cations in industrial and military
A equipment. This type has a maxi-
(sruo) mum peak forward blocking voltage
of 150 volts and a forward-current capability of 10 amperes (average value)
or 16 amperes (rms value). This type is designed to meet stringent military
environmental and mechanical specifications. The special high-strength copper-
alloy stud can withstand an installing torque up to 50 inch-pounds. JEDEC
No. TO-48 package; outline 19, Outlines Section. This type is identical with
type 2N1842A except for the following items:
MAXIMUM RATINGS
For sinusoidal ac supply voltage of 50 to
400 cps, with resistive or inductive load
CHARACTERISTICS
Forward Breakover Voltage (at case temperature of 125°C) 150 min volts
Average Blocking Current (at case temperature of 125°C):
Forward 6.5 max ma
Reverse 6.5 max ma
LONG
SNORT
TERMINAL)
TERMINALI
MAXIMUM RATINGS
For sinusoidal ac supply voltage of 50 to
400 cps, with resistive or inductive load
CHARACTERISTICS
Forward Breakover Voltage (at case temperature of 125°C) 200 min volts
Average Blocking Current (at case temperature of 125°C):
Forward 6max ma
Reverse 6max ma
rgig
l
egui
4EIZNAL)
MAXIMUM RATINGS
For sinusoidal ac supply voltage of 50 to
400 cps, with resistive or inductive Load
CHARACTERISTICS
Forward Breakover Voltage (at case temperature of 125°C) 250 min volts
Average Blocking Current (at case temperature of 125'C):
Forward 5.5 max ma
Reverse 5.5 max ma
T[kV2AL1 lsNosr
( DEAM
21 NPLJ
Diffused-junction n-p-n-p type
used in a wide variety of power-
control and power-switching appli- 2N1848A
cations in industrial and military
equipment. This type has a maxi-
uruo) muni peak forward blocking voltage
of 300 volts and a forward-current capability of 10 amperes (average value)
or 16 amperes (rms value). This type is designed to meet stringent military
environmental and mechanical specifications. The special high-strength copper-
alloy stud can withstand an installing torque up to 50 inch-pounds. JEDEC
No. TO-48 package; outline 19, Outlines Section. This type is identical with
type 2N1842A except for the following items:
MAXIMUM RATINGS
For sinusoidal ac supply voltage of 50 to
400 cps, with resistive or inductive load
CHARACTERISTICS
Forward Breakover Voltage (at case temperature of 125°C) 300 min volts
Average Blocking Current (at case temperature of 125°C):
Forward 5max ma
Reverse 5max ma
MAXIMUM RATINGS
For sinusoidal ac supply voltage of 50 to
400 cps, with resistive or inductive Load
Peak Reverse Voltage:
Repetitive 400 max volts
Non-repetitive (transient) 500 max volts
Peak Forward Blocking Voltage (repetitive) 400 max volts
248 RCA Transistor Manual
CHARACTERISTICS
Forward Breakover Voltage (at case temperature of 125°C) .... 400 min volts
Average Blocking Current (at case temperature of 125°C):
Forward • 4max ma
Reverse 4max ma
e
!LONG
TERMINAL; rsHoR1-..
TERMINAL;
MAXIMUM RATINGS
For sinusoidal ac supply voltage of 50 to
400 cps, with resistive or inductive load
CHARACTERISTICS
Forward Breakover Voltage (at case temperature of 125°C) 500 min volts
Average Blocking Current (at case temperature of 125°C):
Forward 3max ma
Reverse 3max ma
TRANSISTOR
Germanium p-n-p type used in
high-speed switching applications in
2N1853 data-processing equipment. JEDEC
No. TO-5 package; outline 6, Out- 6-
lines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —18 max volts
Collector-to-Emitter Voltage (with base open) —6 max volts
Emitter-to-Base Voltage (with collector open) —2 max volts
Collector Current —100 max ma
Transistor Dissipation:
At ambient temperatures up to 25°C 150 max mw
At ambient temperatures above 25°C See curve page 80
Emitter-To-Base Dissipation (under breakdown condition with
reverse bias):
At ambient temperatures up to 25°C 25 max mw
At ambient temperatures above 25°C See curve page 80
Ambient-Temperature Range:
Operating and storage —55 to 85 °C
Lead Temperature (for 10 seconds maximum) 235 max °C
CHARACTERISTICS
Base-to-Emitter Voltage (with collector ma = —6 and
base ma = —0.2) —0.4 max volt
Collector-to-Emitter Saturation Voltage (with collector ma = —6
and base ma = —0.2) —0.2 max volt
Collector-Cutoff Current (with collector-to-base volts = —15
and emitter current — 0) -4.2 max Pa
Technical Data 249
In Common-Emitter Circuit
TRANSISTOR
Germanium p-n-p type used in
high-speed switching applications in
data-processing equipment. JEDEC
No. TO-5 package; outline 6, Out- 2N1854
lines Section. This type is identical
with type 2N1853 except for the
following:
CHARACTERISTICS
Base-to-Emitter Voltage (with collector ma = —20
and base ma = —0.5) —0.8 max volt
Collector-to-Emitter Saturation Voltage:
With collector ma = —20 and base ma = —0.66 —0.25 max volt
With collector ma = —20 and base ma - 0.5 —0.3 max volt
In Common-Base Circuit
In Common-Emitter Circuit
POWER TRANSISTOR
Silicon n-p-n type used in awide
variety of small-signal and medium-
dustrial
power switching
and military
applications
equipment.
in in-
It 2N1893
features high collector-to-emitter
sustaining voltage, low leakage char-
acteristics, high switching speeds, and a high de forward current-transfer ratio.
This type can be replaced by the 2N2405 in most applications. JEDEC No. TO-5
package; outline 6, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 120 max volts
Collector-to-Emitter Voltage (with external base-to-emitter
resistance = 10 ohms or less) 100 max volts
Collector-to-Emitter Voltage (with base open) 80 max volts
Emitter-to-Base Voltage (with collector open) 7max volts
Collector Current 0.5 max ampere
Transistor Dissipation:
At case temperatures up to 25°C 3max watts
At ambient temperatures up to 25°C 0.8 max watt
At case or ambient temperatures above 25°C See curve page 80.
Temperature Range:
Operating (Junction) —65 to 200
Storage —65 to 300 •C
Lead Temperature (for 10 seconds maximum) 255 max °G
250 RCA Transistor Manual
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector ma = 0.1
and emitter current = 0) 120 min volts
Emitter-to-Base Breakdown Voltage (with emitter ma .. 0.1
and collector current — 0) 7min volts
Collector-to-Emitter Saturation Voltage:
With base ma = 15 and collector ma = 150 5max volts
With base ma = 5 and collector ma — 50 1.2 max volts
Base-to-Emitter Saturation Voltage:
With base ma = 15 and collector ma = 150 1.3 max volts
With base ma = 5 and collector ma — 50 0.9 max volt
Collector-to-Emitter Sustaining Voltage:
With base current = 0 and pulsed collector ma = 30* 80 min volts
With external base-to-emitter resistance = 10 ohms and
pulsed collector ma = 100* 100 min volts
Collector-Cutoff Current:
With case temperature = 25°C, collector-to-base volts = 90,
and emitter current — 0 0.01 max µa
With case temperature = 150°C, collector-to-base volts = 90,
and emitter current — 0 15 max µa
Emitter-Cutoff Current (with emitter-to-base volts = 5 and
collector current — 0) 0.01 max µa
Thermal Resistance:
Junction-to-case 58.3 max °C/watt
Junction-to-ambient 219 max °C/watt
60
45
30
2 I5
BASE MICROAMPERES •0
O 10 20 30 40 50 60 70 80 90 100
COLLECTOR-TO-EMITTER VOLTS 52CM-1653T
5 300
te e
‘<,e
o
Z3. 200
8
lii
100
O
05 07 0.9 11 L3 1.4
BASE-TO-EMITTER VOLTS
szcs-iliesr
Technical Data 251
in Common-Bose Circuit
Input Resistance at 1 kilocycle:
with collector-to-base volts = 5 and collector ma — 1 20 to 30 ohms
With collector-to-base volts = 10 and collector ma = 5 4to 8 ohms
Emitter-to-Base Capacitance (with emitter-to-base volts = 0.5
and collector current = 0) 85 max 0f
Collector-to-Base Capacitance (with collector-to-base volts =
10 and emitter current — 0) 15 max Of
Output Conductance at 1 kilocycle:
With collector-to-base volts = 5 and collector ma — 1 0.5 max µmho
With collector-to-base volts = 10 and collector ma — 5 0.5 max µmho
Small-Signal Open-Circuit Reverse Voltage-Transfer Ratio at
1 kilocycle:
With collector-to-base volts = 5 and collector ma — 1 1.25 x 10-,
With collector-to-base volts = 10 and collector ma = 5 1.5 x 10-,
In Common-Emitter Circuit
DC Forward Current Transfer Ratio:
With collector-to-emitter volts = 10 and pulsed collector ma
-- 150* 40 to 120
With collector-to-emitter volts = 10 and collector ma = 10 35 min
With collector-to-emitter volts = 10 and collector ma = 0.1 20 min
With collector-to-emitter volts = 10, collector ma = 10, and
case temperature = —55°C 20 min
Small-Signal Forward Current-Transfer Ratio:
With collector-to-emitter volts = 5, and collector ma = 1.
and frequency = 1 kilocycle 30 to 100
With collector-to-emitter volts = 10, and collector ma = 5,
and frequency = 1 kilocycle 45 min
With collector-to-emitter volts = 10, and collector ma = 50,
and frequency = 20 Mc 2.5 min
POWER TRANSISTOR
Germanium p-n-p type used in
a wide variety of switching and am-
plifier applications. It is used as a 2N 1905
high-power high-speed switch in
dc-to-dc converters, inverters, and
computers for data-processing equip-
ment; and in ultrasonic oscillators and large-signal wide-band linear amplifiers.
Package is similar to JEDEC No. TO-3; outline 24, Outlines Section. This type
is identical with type 2N1906 except for typical operation and the following
items:
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —60 max volts
Collector-to-Emitter Voltage (with base open) —40 max volts
- 0
-25
-
-15
-10
— BASE MILLIAMPERES •-5
á 4
o
1- 3
u
_2
o
u
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector ma = —10
and en-tide] curl ent — 0) —60 min volts
Collector-to-Emitter Breakdown Voltage (with collector
ma = —100 and base current = 0) —40 min volts
Base-to-Emitter Voltage (with collector-to-emitter volts = —2
and collector ma = —1000) —0.38 volt
Collector-to-Emitter Saturation Voltage (with collector
ma = —1000 and base ma = —50) —0.3 volt
In Common-Emitter Circuit
POWER TRANSISTOR
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —100 max volts
Collector-to-Emitter Voltage (with base open) —40 max volts
Emitter-to-Base Voltage (with collector open) —1 max volt
Collector Current —10 max amperes
Base Current —3 max amperes
Transistor Dissipation:
For mounting-flange temperatures up to 25°C 50 max watts
For mounting-flange temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) and storage —55 to 100 °C
Lead Temperature (for 10 seconds maximum) 255 max
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector ma = —10
and emitter current — 0) 100 min volts
Collector-to-Emitter Breakdown Voltage (with collector
ma = —100 and base current — 0) 40 min volts
Emitter-to-Base Breakdown Voltage (with emitter ma = —5
and collector current — 0) 1min volt
Technical Data 253
...„----------- .55
-30
25
-20
_
-t0
BASE MILUAMPERCS • 5
O
-5 -10 -15 -20 -25 -30 -35 -40
COLLECTOR-TO-EIMTTER VOLTS WM-1069671
MOUNTING -FLANGE
TEMPERATURE= 25•C
COLLECTOR-TO-
EMITTER VOLTS.-2
In Common-Emitter Circuit
POWER TRANSISTOR
Silicon n-p-n type used in a
wide variety of high-power switch-
2N2015 ing and amplifier applications in in-
dustrial and military equipment. It
is used in power-switching, dc-to-dc
converter, inverter, chopper, sole-
noid and relay control circuits; in oscillator, regulator, and pulse-amplifier
circuits; and as a class A or class B push-pull audio and servo amplifier. It
features low saturation resistance, high current and power dissipation, high
beta at high current, and excellent high-temperature performance. JEDEC No.
TO-36 package; outline 14, Outlines Section. This type is identical with type
2N2016 except for the following:
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 100 max volts
Collector-to-Emitter Voltage (with base open) 50 max volts
CHARACTERISTICS
Collector-to-Emitter Voltage:
With emitter-to-base volts = —1.5 and collector ma — 2 100 min volts
With base open and collector ma = 200 50 min volts
Collector-Cutoff Current (with collector-to-emitter volts = 100
and base-to-emitter volts = —1.5) 2max ma
Collector-to-Emitter Sustaining Voltage (with collector amperes
= 0.2 and base current — 0) 50 min volts
POWER TRANSISTOR
Silicon n-p-n type used in a
wide variety of high-power switch-
2N2016 ing and amplifier applications in in
and military equipment. It
is used in power-switching, dc-to-dc
converter, inverter, chopper, sole-
noid and relay control circuits; in oscillator, regulator, and pulse-amplifier
circuits; and as a class A or class B push-pull audio and servo amplifier. It
features low saturation resistance, high current and power dissipation, high
beta at high current, and excellent high-temperature performance. JEDEC
No. TO-36 package; outline 14, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 130 max volts
Collector-to-Emitter Voltage (with base open) 65 max volts
Emitter-to-Base Voltage (with collector open) 10 max volts
Collector Current 10 max amperes
Base Current 6max amperes
Emitter Current —13 max amperes
Transistor Dissipation:
At case temperatures up to 25°C 150 max watts
At case temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) and Storage —65 to 200 °C
Technical Data 255
CHARACTERISTICS
Collector-to-Emitter Voltage:
With emitter-to-base volts = —1.5 and collector ma — 2 130 min volts
With base open and collector ma = 200 65 min volts
Collector-to-Emitter Sustaining Voltage (with collector
ma -= 200 and base current — 0) 65 min volts
Collector-to-Emitter Saturation Voltage (with collector
amperes = 5 and base ampere = 0.5) 1.25 max volts
Base-to-Emitter Voltage (with collector-to-emitter volts -= 5
and collector amperes — 5) 2.2 max volts
Collector-Cutoff Current:
With collector-to-emitter volts = 30, base-to-emitter
volts -= —1.5, and case temperature = 150°C 2max ma
With collector-to-emitter volts = 130, base-to-emitter
volts = —1.5, and case temperature = 25°C 2max ma
Emitter-Cutoff Current (with emitter-to-base volts = 10 and
collector current — 0) 0.05 max ma
Thermal Resistance:
Junction-to-case 1.17 max °C/watt
Thermal Time Constant 30 msec
500
rn
41
t 900 400
11. 6
100
30 })
1 10
0 ,
o 10 20 30 40 50 60 70 80
COLLECTOR-TO-EMITTER VOLTS 92CH-11092T
In Common-Base Circuit
In Common-Emitter Circuit
TRANSISTOR
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 120 max volts
Collector-to-Emitter Voltage:
With external base-to-emitter resistance = 10 ohms or less 80 max volts
With base open 65 max volts
Emitter-to-Base Voltage (with collector open) 7 max volts
Collector Current 1 max ampere
Transistor Dissipation:
At case temperatures up to 25°C 5 max watts
At ambient temperatures up to 25 °C 1 max watt
At case or ambient temperatures above 25 °C See curve page 80
Temperature Range:
Operating (junction) —65 to 200 °C
Storage —65 to 300 "C
Lead Temperature (for 10 seconds maximum) 300 max °C
à 300
1200
f)
\
g too
e
'BASE MICROAMPERES •0
O 0 0
O 20 40 60 80 r00 O
COLLECTOR-TO-EM TIER VOLTS OASE-TO-EMITTER VOLTS
92C5-111T5T 12664501
Technical Data 257
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector ma = 0.1
and emitter current — 0) 120 min volts
Emitter-to-Base Breakdown Voltage (with emitter ma = 0.1
and collector current — 0) 7min volts
Collector-to-Emitter Reach-Through Voltage (with emitter-to-
base volts = 1.5 and collector ma = 0.1) 120 min volts
Collector-to-Emitter Sustaining Voltage:
With external base-to-emitter resistance = 10 ohms or less
and collector ma = 100 80 min volts
With collector ma = 100 and base current — 0 65 min volts
Base-to-Emitter Saturation Voltage (with collector ma = 150
and base ma = 15) 1.1 max volts
Collector-to-Emitter Saturation Voltage (with collector ma = 150
and base ma = 15) 0.5 max volt
Collector-Cutoff Current (with collector-to-base volts = 60
and emItter current — 0) 0.002 max pa
Emitter-Cutoff Current (with emitter-to-base volts = 5
and collector current — 0) 0.002 max pa
Thermal Resistance:
Junction-to-case 35 max *C/watt
Junction-to-ambient 175 max °C/watt
In Common-Bose Circuit
e
500
à400
o
s-
u 300
o
u 200
i
100
r
-----
¡BASE MILLIAMPERES •0
o 4 6 e uo 12
COLLECTOR- TO-EMITTER VOLTS 92Cm-m76T
In Common-Emitter Circuit
-50 V +20 V
R2
R3
= 0.01 a
OUTPUT RI. R4 = 100 ohms
TO Rs= 1000 ohms
SAMPLING R3 = 4700 ohms
OSCILLOSCOPE R5 = 40 ohms
INPUT Ro = 1000 ohms, 5 watts
FROM
PULSE R6 -50 V
GENER-
ATOR CR
+50 V
,-20 V 92CS-11106R1
POWER TRANSISTOR
Germanium p-n-p type used in
high-fidelity amplifiers and other af
amplifiers where wide frequency
2N2147 range and low distortion are re-
quired. It is intended primarily for
class B amplifier service. JEDEC No.
TO-3 package; outline 5, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage —75 max volts
Collector-to-Emitter Voltage —50 max volts
Emitter-to-Base Voltage —1.5 max volts
Collector Current —5 max amperes
Base Current —1 max ampere
Emitter Current 5max amperes
Transistor Dissipation:
At mounting-flange temperatures up to 81°C 12.5 max watts
At mounting-flange temperatures above 81°C Derate 0.66 watt/°C
Temperature Range:
Operating (junction) and Storage —65 to 100 *C
Lead Temperature (for 10 seconds maximum) 255 max °C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector ma = —10
and emitter current — 0) —75 min volts
Collector-to-Emitter Breakdown Voltage (with collector ma =
—100 and base current — 0) —50 min volts
Base-to-Emitter Voltage (with collector-to-emitter volts = —10
and collector ma = —50) —0.24 volt
Collector-Cutoff Current (with collector-to-base volts = —40
and emitter current — 0) —1 max ma
Technical Data 259
In Common-Emitter Circuit
;.". -25\
\
\
-2.D \ BOUNDARY OF
RECOMMENDED OPERATING
REGION
IS\
\
\
le*
............,
"s.....
BASE MILLIAMPERES* 5-**--, .......
I ---
......... .......
o
COLLECTOR-TO-EMITTER VOLTS •szcm-8331r2
40
- 30
e 20
10
Power Gain 33 db
Maximum-Signal Power Output 25 watts
Total Harmonic Distortion at Maximum Signal Power Output 5 per cent
Maximum Collector Dissipation (per transistor) under worst-case
conditions 12.5 watts
EIA Music Power Output Rating 45 watts
DRIVER
STAGE
Re
= 22 volts
RI, = 330 ohms. 2 watts
R2. R.
= 3.9 ohms, 0.5 watt 92C5-11332R2
Ro, Re = 0.27 ohm. 0.5 watt
Voice coil
impedance = 4 ohms
POWER TRANSISTOR
Germanium p-n-p type used in
high-fidelity amplifiers and other af
2N2148 amplifiers where wide frequency
range and low distortion are re-
quired. It is intended primarily for
use as a class A power amplifier
in driver stages of high-power, high-quality af amplifiers, and in the output
stages of moderate-power amplifiers. It can also be used in class B power-
amplifier circuit. JEDEC No. TO-3 package; outline 5, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage —60 max volts
Collector-to-Emitter Voltage —40 max volts
Emitter-to-Base Voltage —1.5 max volts
Collector Current —5 max amperes
Base Current —1 max ampere
Emitter Current 5max amperes
Transistor Dissipation:
At mounting-flange temperatures up to 81°C 12.5 max watts
At mounting-flange temperatures above 81°C Derate 0.66 watt/°C
Temperature Range:
Operating (junction) and Storage —65 to 100
Lead Temperature (for 10 seconds maximum) 255 max °C
Technical Data 261
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector ma = -10
and emitter current = 0) -60 min volts
Collector-to-Emitter Breakdown Voltage (with collector ma =
-100 and base current - 0) -40 min volts
Base-to-Emitter Voltage (with collector-to-emitter volts = -10
and collector ma = -50) -0.26 volt
Collector-Cutoff Current (with collector-to-base volts = -40 and
emitter current - 0) -1 max ma
Collector-Cutoff Saturation Current (with collector-to-base volt
= -0.5 and emitter current - 0) -100 max ma
Emitter-Cutoff Current (with emitter-to-base volts = -1.5 and
collector current = 0) -10 max ma
Thermal Resistance:
Junction-to-case 1.5 max °C/watt
In Common-Emitter Circuit
40
, -3 \
BOUNDARY OF
-\
-3 0 25\ RECOMMENDED OPERATING
REGION
-20
-15 ''`. -
1 r -10
BASE MILLIAMPERES a-5 .... -- -- -- - -
1
o -15 -20 -25 -30 -35 - 40
j 30
o
a 20
10
'ro
DRIVER
STAGE
TRANSISTOR
Silicon n-p-n type used in very-
high-speed switching applications in
equipments which require high re-
2N2205 liability and high packaging densi-
ties. JEDEC No. TO-18 package;
outline 12, Outlines Section. This
type is electrically identical with type 2N1708 except for the following item:
CHARACTER ISTICS
Emitter-Cutoff Current (with emitter-to-base volts = 3 and
collector current - 0)
100 max ja
TRANSISTOR
Silicon n-p-n type used in very-
high-speed switching applications in
equipments which require high re-
2N2206 liability and high packaging densi-
ties. JEDEC No. TO-46 package;
outline 18, Outlines Section.
Technical Data 263
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 25 max volts
Collector-to-Emitter Voltage (with external base-to-emitter
resistance = 1000 ohms and load resistance = 100 ohms) 20 max volts
Emitter-to-Base Voltage (with collector open) 3max volts
Collector Current 0.2 max ampere
Transistor Dissipation:
At case temperatures up to 25°C 1max watt
At ambient temperatures up to 25°C 0.3 max watt
At case or ambient temperatures above 25°C See curve page 80
Temperature Range:
Operation (junction) —65 to 175 °C
Storage —65 to 300 °C
Lead Temperature (for 10 seconds maximum) 235 max °C
CHARACTERISTICS
Base-to-Emitter Saturation Voltage (with collector ma = 10
and base ma = 1) 0.7 to 0.9 volt
Collector-to-Emitter Saturation Voltage:
With collector ma = 10 and base ma — 1 0.22 max volt
With collector ma = 50 and base ma — 5 0.35 max volt
Collector-Cutoff Current (with collector-to-base volts = 15
and emitter current — 0) 0.025 max µa
In Common-Base Circuit
In Common-Emitter Circuit
TRANSISTOR
Silicon n-p-n type used in a
wide variety of small-signal and
dustrial
medium-power
and military
applications
equipment
in in-
It 2N2270
C can be used in rf service as an am-
plifier, mixer, oscillator and con-
verter; in af service in small-signal and power applications. It features low
output capacitance and exceptionally low noise and leakage characteristics.
JEDEC No. TO-5 package; outline 6, Outlines Section. For curve of collector
characteristics, refer to type 2N2102.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 60 max volts
Collector-to-Emitter Voltage:
With external base-to-emitter resistance = 10 ohms or less 60 max volts
With base open 45 max volts
Emitter-to-Base Voltage (with collector open) 7max volts
Collector Current 1max ampere
Transistor Dissipation:
At case temperatures up to 25°C 5max watts
At ambient temperatures up to 25°C 1max watt
At case or ambient temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) and storage —65 to 200 oc
Lead Temperature (for 10 seconds maximum) 255 max °C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector ma = 0.1
and emitter current = 0) 60 min volts
Emitter-to-Base Breakdown Voltage (with emitter ma = 0.1
and collector current = 7min volts
264 RCA Transistor Manual
In Common-Base Circuit
In Common-Emitter Circuit
TRANSISTOR
Germanium p-n-p type used for
low-power radio-frequency ampli-
fier applications in the vhf range
2N2273 in industrial and military equipment.
JEDEC No. TO-18 package; outline
12, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —25 max volts
Collector-to-Emitter Voltage (with base open) —15 max volts
Emitter-to-Base Voltage (with collector open) —1 max ma
Collector Current —100 max ma
Transistor Dissipation:
At ambient temperatures up to 25°C 100 max mw
At ambient temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) and storage —65 to 100 °C
Lead Temperature (for 10 seconds maximum) 235 max °C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector ma = 0.1
and emitter current — 0) —25 min volts
Collector-to-Emitter Breakdown Voltage (with collector ma = 01
and base current — 0) —15 min volts
Emitter-to-Base Breakdown Voltage (with emitter ma = 0.1
and collector current — 0) —1 min volt
Collector-Cutoff Current (with collector-to-base volts = —12
and emitter current — 0) —10 max ea
In Common-Base Circuit
In Common-Emitter Circuit
ROWER TRANSISTOR
E Silicon n-p-n type used in a
wide variety of switching and am-
plifier applications in industrial 2N2338
equipment. It is used in power-
switching, dc-to-dc converter, in-
verter, chopper, and relay-control
circuits; in oscillator, voltage- and current-regulator circuits; and in de and
servo amplifier circuits. JEDEC No. TO-36 package; outline 14, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 60 max volts
Collector-to-Emitter Voltage:
With emitter-to-base volts — 1.5 60 max volts
With base open 40 max volts
Emitter-to-Base Voltage (with collector open) 6max volts
Collector Current 7.5 max amperes
Base Current 5max amperes
Transistor Dissipation:
At case temperatures up to 25°C 150 max watts
At case temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) and storage —65 to 200 'C
CHARACTERISTICS
Collector-to-Emitter Voltage (with emitter-to-base volts = 1.5
and collector ma — 2) 60 min volts
Collector-to-Emitter Sustaining Voltage (with base open and
collector ma = 200) 40 min volts
Base-to-Emitter Voltage (with collector-to-emitter volts = 4
and collector amperes — 3) 3max volts
Collector-to-Emitter Saturation Voltage:
With collector amperes = 6 and base ampere — 1 3.5 max volts
With collector amperes = 3 and base ampere — 0.3 1.5 max volts
Collector-Cutoff Current:
With collector-to-emitter volts = 30 and base current = 0 5max ma
With collector-to-emitter volts = 60 and base-to-emitter volts
= —1.5 2max ma
With collector-to-emitter volts = 30, base-to-emitter volts
= —1.5, and case temperature = 200°C 50 max ma
With collector-to-base volts = 30, emitter current = 0, and
case temperature =
25°C 0.2 max ma
150°C 3max ma
Emitter-Cutoff Current (with emitter-to-base volts = 6
and collector current = 0) 0.1 max ma
Thermal Time Constant 30 msec
Thermal Resistance:
Junction-to-case 1.17 max °C/watt
In Common-Base Circuit
in Common-Emitter Circuit
1— 700
600
___ 500
,.
400
r
300
200
5030 ........../
r_____..........„9
10
1 0
40 50 60 70 80
COLLECTOR-TO-EMITTER VOLTS 92CM-1155611
/
-65
1000 — --- 175 —
RC
=I 750 RB I
to 500
<
co
250 VBB Vc c
,.., ./
RB2
- 1111 +
2 3
BASE-TO-EMITTER VOLTS
62CS -I1560T 92CS-11125RI
Technical Data 267
POWER TRANSISTOR
Silicon n-p-n type used in a
wide variety of switching and ampli-
fier applications in industrial equip- 2N2339
ment. It is used in power-switching,
dc-to-dc converter, inverter, chop-
C B E per, and relay-control circuits; in
oscillator, voltage- and current-regulator circuits; and in dc and servo ampli-
fiers circuits. This type has an offset pedestal, stud-mounted arrangement
which provides heat-sink contact. Outline 28, Outlines Section. For curves of
typical collector characteristics and base characteristics, refer to type 2N2338.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 60 max volts
Collector-to-Emitter Voltage:
With emitter-to-base volts — 1.5 60 max volts
With base open 40 max volts
Emitter-to-Base Voltage (with collector open) 6max volts
Collector Current 2.5 max amperes
Base Current 1max ampere
Transistor Dissipation:
At case temperatures up to 25°C 40 max watts
At case temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) and Storage —65 to 200 °C
Lead Temperature (for 10 seconds maximum) 255 max °C
CHARACTERISTICS
Collector-to-Emitter Voltage (with emitter-to-base volts = LS
and collector ma = 0.75) 60 min volts
Collector-to-Emitter Sustaining Voltage (with base open and
collector ma = 100) 40 min volts
Base-to-Emitter Voltage (with collector-to-emitter volts = 4 and
collector ampere = 0.3) 3max volts
Collector-to-Emitter Saturation Voltage:
With collector amperes = 1.5 and base ampere = 0.3 9max volts
With collector ampere = 0.3 and base ampere = 0.03 1.5 max volts
Collector-Cutoff Current:
With collector-to-emitter volts = 30 and base current = 0 3max ma
With collector-to-emitter volts = 60 and base-to-emitter volts
= —1.5 0.75 max ma
With collector-to-emitter volts = 30, base-to-emitter volts
= —1.5, and case temperature = 200°C 20 max ma
With collector-to-base volts = 30, emitter current .=. 0, and
case temperature =
25°C 0.1 max ma
150°C 1.5 max ma
Emitter-Cutoff Current (with emitter-to-base volts = 6 and
collector current — 0) 0.05 max ma
Thermal Time Constant 10 msec
Thermal Resistance:
Junction-to-case 7max °C/watt
Junction-to-ambient 100 max °C/watt
In Common-Base Circuit
In Common-Emitter Circuit
POWER TRANSISTOR
Silicon n-p-n type used in awide
variety of small-signal and medium-
2N2405 power switching applications in in-
dustrial and military equipment. It
features high collector-to-emitter
sustaining voltage, low leakage char-
acteristics, high switching speeds, and a high de forward current-transfer ratio.
JEDEC No. TO-5 package; outline 6, Outlines Section. For curve of typical
transfer characteristics, refer to type 2N1893.
MAXIMUM RATINGS
Collector-to-Base Voltage (with base-to-emitter reverse bias
= 1.5 volts) 120 max volts
Collector-to-Base Voltage (with emitter open) 120 max volts
Collector-to-Emitter Voltage:
With external base-to-emitter resistance = 10 ohms or less 140 max volts
With external base-to-emitter resistance = 500 ohms 120 max volts
Collector-to-Emitter Voltage (with base open) 90 max volts
Emitter-to-Base Voltage (with collector open) 7max volts
Collector Current 1max ampere
Transistor Dissipation:
At case temperatures up to 25°C 5max watts
At ambient temperatures up to 25°C 1max watt
At case or ambient temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) and Storage —65 to 200 °C
Lead Temperature (for 10 seconds maximum) 255 max °C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector ma =. 0.1
and emitter current — 0) 120 min volts
Emitter-to-Base Breakdown Voltage (with emitter ma = 01
and collector current = 0) 7min volts
Collector-to-Emitter Saturation Voltage:
With base ma = 15 and collector ma = 150 0.5 max volt
With base ma = 5 and collector ma — 50 0.2 max volt
Base-to-Emitter Saturation Voltage:
With base ma = 15 and collector ma = 150 1.1 max volts
With base ma = 5 and collector ma — 50 0.9 max volt
Technical Data 269
In Common-Base Circuit
In Common-Emitter Circuit
DC Forward Current-Transfer Ratio:
With collector-to-emitter volts .= 10 and pulsed collector ma
= 500• 25 min
With collector-to-emitter volts = 10 and pulsed collector ma
= 150° 60 to 200
With collector-to-emitter volts = 10 and collector ma = 10 . 35 min
With collector-to-emitter volts = 10, collector ma = 10, and
case temperature = —55°C 20 min
Small-Signal Forward Current-Transfer Ratio:
With collector-to-emitter volts = 5, collector ma = 5, and
frequency = 1 kilocycle 50 to 275
With collector-to-emitter volts = 10, collector ma = 50, and
frequency = 20 Mc 6min
Noise Figure (with collector-to-emitter volts = 10, collector ma
= 0.3 generator resistance = 500 ohms, circuit bandwidth
= 15 kilocycles, and signal frequency = 1 kilocycle) 6max db
•Pulse duration = 300 µsec, duty factor = 0.018
! 7
i GO
4
30
I
15
BASE MICROAMPERES•0
10 20 30 40 50 60 70 on on inn un i•Set I. ••• I
TRANSISTOR
Silicon n-p-n type used in ultra-
high-speed logic-circuit applications
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 15 max volts
Collector-to-Emitter Voltage (with base open) 6 max volts
Emitter-to-Base Voltage (with collector open) 4 max volts
Transistor Dissipation:
At case temperatures up to 100°C 500•max mw
At ambient temperatures up to 25°C 300 max mw
At ambient temperatures above 25°C See curve page 80
Temperature Range:
Storage —65 to 300 °C
Operating (junction) —65 to 200 °C
Lead Temperature (for 10 seconds maximum) 300 max °C
•This rating must be reduced by 5 mw per °C for case temperature above 100°C.
CHARACTERISTICS
Base-to-Emitter Saturation Voltage (with collector ma = 20
and base ma = 0.66) 0.8 to 1.0 volt
Collector-to-Emitter Saturation Voltage (with collector ma = 20
and base ma = 0.66) 0.4 max volt
Collector-Cutoff Current (with collector-to-base volts = 5
and emitter current — 0) 0.05 max sa
In Common-Base Circuit
In Common-Emitter Circuit
TRANSISTOR
Silicon n-p-n type used in core-
driving and line-driving applications
requiring exceptionally fast switch-
2N2476 ing speeds at high currents. JEDEC
No. TO-5 package; outline 6, Out-
lines Section. This type is identical
with type 2N2477 except for the following items:
CHARACTERISTICS
Collector-to-Emitter Saturation Voltage:
With collector ma = 150 and base ma — 7.5 0.4 max volt
With collector ma = 500 and base ma — 50 0.75 max volt
Base-to-Emitter Voltage (with collector ma = 150
and base ma = 7.5) 1max volt
In Common-Emitter Circuit
TRANSISTOR
Silicon n-p-n type used in core-
driving and line-driving applications
requiring exceptionally fast switch-
ing speeds at high currents. JEDEC 2N2477
No. TO-5 package; outline 6, Out-
lines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 60 max volts
Collector-to-Emitter Voltage (with base open) 20 max volts
Emitter-to-Base Voltage (with collector open) 5max volts
Transistor Dissipation:
At case temperatures up to 25°C 2max watts
At ambient temperatures up to 25°C 0.6 max watt
At case or ambient temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) —65 to 200 °C
Storage —65 to 300 oc
Lead Temperature (for 10 seconds maximum) 300 max OC
CHARACTERISTICS
Collector-to-Emitter Saturation Voltage:
With collector ma = 150 and base ma = 3.75 0.4 max volt
With collector ma = 500 and base ma — 50 0.65 max volt
Base-to-Emitter Voltage (with collector ma = 150
and base ma = 3.75) 0.95 max volt
Collector-Cutoff Current (with collector-to-base volts = 30
and emitter current — 0) 0.2 max
In Common-Base Circuit
In Common-Emitter Circuit
TRANSISTOR
Germanium n-p-n type used for
low-power radio-frequency ampli-
fier applications in the vhf range in
industrial and military equipment. 2N2482
JEDEC No. TO-18 package; outline
12, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) 20 max volts
Collector-to-Emitter Voltage (with base open) 12 max volts
Emitter-to-Base Voltage (with collector open) 3max volts
Collector Current
Transistor Dissipation: 100 max ma
At ambient temperatures up to 25°C 150 max mw
At ambient temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) and storage —65 to 100 °C
Lead Temperature (for 10 seconds maximum) 235 max °C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector ma = 0.1
and emitter current = 0) 20 min volts
Collector-to-Emitter Breakdown Voltage (with collector ma = 2
and base short-circuited to emitter) 15 min volts
Emitter-to-Base Breakdown Voltage (with emitter ma = 0.1
and collector current = 0) 3min volts
Collector-Cutoff Current (with collector-to-base volts = 6
and emitter current — 5max
272 RCA Transistor Manual
In Common-Base Circuit
In Common-Emitter Circuit
TRANSISTOR
MAXIMUM RATINGS
Collector-to-Base Voltage —30 max volts
Collector-to-Emitter Voltage (with external base-to-emitter
—25 max volts
resistance = 10000 ohms)
Emitter-to-Base Voltage —25 max volts
Collector Current —50 max ma
Emitter Current 50 max ma
Transistor Dissipation:
At ambient temperatures up to 55°C 120 max mw
At ambient temperatures above 55°C Derate 2.6 mw/°C
Temperature Range:
Operating (Junction) and Storage —65 to 100 °C
Lead Temperature (for 10 seconds maximum) 255 max °C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with emitter-to-base
volts = —2 and collector ma = —0.05) —30 min volts
Technical Data 273
In Common-Emitter Circuit
,0
-10
_
•-5.
-1 —BASE MICROAMPERES
- -6 -7 -8 -9 -10
COLLECTOR-TO-EMITTER VOLTS 92CM-19547
TRANSISTOR
Germanium p-n-p type used in
a wide variety of small-signal and
low-power applications in high-
2N2614 quality audio-frequency amplifier
equipment. It is intended primarily
for use in low-to-medium-level
audio-amplifier and driver stages. It features a high small-signal forward
current-transfer ratio, excellent linearity over the entire range of collector
current, high cutoff frequency, low saturation currents, and uniform gain
characteristics over the entire audio-frequency spectrum. JEDEC No. TO-1
package; outline 4, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage —40 max volts
Collector-to-Emitter Voltage (with external base-to-emitter
resistance = 10000 ohms) —35 max volts
Emitter-to-Base Voltage —25 max volts
Collector Current —50 max ma
Emitter Current 50 max ma
Transistor Dissipation:
At ambient temperatures up to 55°C 120 max mw
At ambient temperatures above 55°C Derate 2.6 mw/°C
At case temperatures up to 55°C with infinite heat sink 300 max mw
At case temperatures above 55°C with infinite heat sink Derate 6.67 mw/°C
At case temperatures up to 55°C with typical heat sink 225 max mw
At case temperatures above 55°C with typical heat sink Derate 5 mw/°C
Temperature Range:
Operating (junction) and Storage —65 to 100 °C
Lead Temperature (for 10 seconds maximum) 255 max °C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with emitter-to-base
volts = —2 and collector ma = —0.05) —40 min volts
Collector-to-Emitter Breakdown Voltage (with collector ma
= —1 and external base-to-emitter resistance = 10000 ohms) —35 min volts
Emitter-to-Base Breakdown Voltage (with emitter ma = —0.05
and collector current — 0) —25 min volts
Collector-Cutoff Current (with collector-to-base volts -= —20
and emitter current = 0) —5 max
Emitter-Cutoff Current (with emitter-to-base volts -= —20
and collector current — 0) —75 max µa
Extrinsic Base-Lead Resistance (measured at 20 Mc with
collector-to-emitter volts = —6 and collector ma = —1) 300 ohms
In Common-Emitter Circuit
1
I
muse
o
BASE-TO-EMITTER MILL VOLTS
11M-11114.111
Technical Data 275
e...„............:s.!...:
-OA-
-03 5
./------------- _
-0.05
--
-
BASE MILLIAMPERES •0
. -
-a -4
COLLECTOR-TO-EMITTER VOLTS 92CM-11036T
POWER TRANSISTOR
Silicon n-p-n type used in awide
variety of large-signal high-power
vhf applications in military and in- 2N2631
dustrial communications equipment.
c It is intended primarily for use in
AM, FM, and CW circuits at fre-
quencies up to 150 megacycles. It features high power output and high voltage
ratings. This type is 100-per-cent tested to assure freedom from second break-
down in class A operation at maximum ratings. JEDEC No. TO-39 package;
outline 32, Outlines Section. This type is identical with type 2N2876 except
for the following items:
MAXIMUM RATINGS
Collector Current 1.5 max amperes
Transistor Dissipation:
At case temperatures up to 25*C 8.75 max watts
At case temperatures above 25 °C See curve page 80
t 0.3
A
0.2
0.1
0 JO 20 30 40 50 60
COLLECTOR-TO- EMITTER VOLTS
112U-12039T
276 RCA Transistor Manual
CHARACTERISTICS
Collector-to-Emitter Saturation Voltage (with base ma = 300
and collector amperes = 1.5) 1max volt
In Common-Emitter Circuit
POWER TRANSISTOR
MAXIMUM RATINGS
Collector-to-Base Voltage 35 max volts
Collector-to-Emitter Voltage 20 max volts
Emitter-to-Base Voltage 3max volts
Collector Current Limited by power
dissipation
Transistor Dissipation:
At ambient temperatures up to 25°C 200 max mw
At ambient temperatures above 25°C See curve page 80
Temperature Range:
Operating (Junction) and Storage —65 to 200 °C
Lead Temperature (for 10 seconds maximum) 230 m ax °C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector µa = 1
and emitter current — 0) 35 m i
n vo l
ts
Collector-to-Emitter Breakdown Voltage (with pulsed collector
ma = 3• and base current — 0) 20 min volts
Emitter-to-Base Breakdown Voltage (with emitter µa = 10
and collector current — 0) 3m in volts
Collector-Cutoff Current:
With ambient temperature = 25°C, collector-to-base volts = 15.
and emitter current — 0 0.01 max
With ambient temperature = 150°C, collector-to-base volts =
15. and emitter current — 1max
In Common-Base Circuit
In Common-Emitter Circuit
POWER TRANSISTOR
MAXIMUM RATINGS
Collector-to-Base Voltage 30 max volts
Collector-to-Emitter Voltage 15 max volts
Emitter-to-Base Voltage 2.5 max volts
Collector Current 20 max ma
Transistor Dissipation:
At ambient temperatures up to 25°C 200 max mw
At ambient temperatures above 25°C See curve page 80
At case temperatures up to 25°C (with heat sink) 300 max mw
At case temperatures above 25°C (with heat sink) See curve page 80
Temperature Range:
Operating (junction) and Storage —65 to 200 °C
Lead Temperature (for 10 seconds maximum) 230 max °C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector ma
= 0.001 and emitter current — 0) 30 min volts
Collector-to-Emitter Breakdown Voltage (with collector ma
= 3 and base current = 0) 15 min volts
Emitter-to-Base Breakdown Voltage (with emitter ma
--- 0.01 and collector current — 0) 2.5 min volts
Collector-Cutoff Current (with collector-to-base volts = 15
and emitter current — 0) 0.01 max ea
In Common-Base Circuit
In Common-Emitter Circuit
POWER TRANSISTOR
Germanium p-n-p type used in
2N2869/ a wide variety of af power-amplifier
and large-signal applications in
2N3O1 commercial, industrial, and military
equipment. It is used in class A and
class B af-output-amplifier stages of
automobile radio receivers and mobile communications equipment. It provides
excellent dc-to-dc and dc-to-ac power conversion. This type features high
breakdown voltage, low saturation voltage, high large-signal beta, and a high
dissipation capability. JEDEC No. TO-3 package; outline 5, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage — 60 max volts
Collector-to-Emitter Voltage —50 max volts
Emitter-to-Base Volts —10 max volts
Collector Current —10 max amperes
Emitter Current 10 max amperes
Base Current —3 max amperes
Transistor Dissipation:
At mounting-flange temperatures up to 55°C 30 max watts
At mounting-flange temperatures above 55°C Derate 0.66 watt/°C
Temperature Range:
Operating (Junction) and Storage —65 to 100 °C
Lead Temperature (for 10 seconds maximum) 255 max °C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector ma = —5
and emitter current — 0) —60 min volts
Collector-to-Emitter Breakdown Voltage (with collector ma
= —600 and base current — 0) —50 min volts
Emitter-to-Base Breakdown Voltage (with emitter ma = —2
and collector current — 0) —10 min volts
Collector-to-Emitter Saturation Voltage (with collector amperes
= —10 and base ampere = —1) —0.75 max volt
Base-to-Emitter Voltage (with collector-to-emitter volts = —2
and collector ampere = —1) —0.5 max volt
Collector-Cutoff Current (with collector-to-base volts = —30
and emitter current — 0) —0.5 max ma
Collector-Cutoff Saturation Current (with collector-to-base
volts = —0.5 and emitter current — 0) —0.1 max ma
In Common-Emitter Circuit
10
o
lal
—J
o
o -0.2 -0.4 -0.6 -0.8 0 -50 -100 -150 -200 -250 -300
BASE-TO-EMITTER VOLTS EASE MILLIAMPERES
3201-1NIWN ftC1- 11t50Ti
Technical Data 279
-,..?,e6
=20 0
0-7:75
-450
t2
-400
50
-40
-
-10
-5
ASE MILLIAMPE S• -I
o - -10 -15 - 20 -25 -30 -35 -40 -45 -50
COLLECTOR-TO-EMITTER VOLTS 92O, 924712
POWER TRANSISTOR
Germanium p-n-p type used in
a wide variety of af power-amplifier 2N2870/
and large-signal applications in
commercial, industrial, and military 2N301A
equipment. It is used in class A and
class B al-output-amplifier stages
of automobile radio receivers and mobile communications equipment. It pro-
vides excellent de-to-de and dc-to-ac power conversion. This type features
high breakdown voltage, low saturation voltage, high large-signal beta, and a
high dissipation capability. JEDEC No. TO-3 package; outline 5, Outlines Sec-
tion. This type is identical with type 2N21169/2N301 except for the following
items:
280 RCA Transistor Manual
MAXIMUM RATINGS
Collector-To-Base Voltage —80 max volts
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector ma = —5
and emitter current — 0) —80 min volts
Collector-to-Emitter Saturation Voltage (with collector
amperes = —10 and base ampere = —1) —0.5 max volt
POWER TRANSISTOR
MAXIMUM RATINGS
Collector-to-Base Voltage 80 max volts
Collector-to-Emitter Voltage:
With base open 60 max volts
With base-to-emitter volts = 1.5 80 max volts
Emitter-to-Base Voltage 4max volts
Collector Current 2.5 max amperes
Transistor Dissipation:
At case temperatures up to 25°C 17.5 max watts
At case temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) and Storage —65 to 200 °C
Lead Temperature (for 10 seconds maximum) 230 max °C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector ma = 0.5
and emitter current = 0) 80 min volts
Collector-to-Emitter Sustaining Breakdown Voltage (with
pulsed collector ma .= 500* and base current — 0) 60 min volts
Collector-to-Emitter Breakdown Voltage (with base-to-emitter
volts = —1.5 and collector ma = 0.1) 80 min volts
Emitter-to-Base Breakdown Voltage (with emitter ma = 0.1
and collector current — 0) 4min volts
Collector-to-Emitter Saturation Voltage (with base ma = 500
and collector amperes .= 2.5) 1max volt
Collector-Cutoff Current (with collector-to-base volts = 30
and emitter current = 0) 0.1 max ea
Collector-to-Case Capacitance 6max pf
In Common-Base Circuit
In Common-Emitter Circuit
O 10 20 30 40 50 60
COLLECTOR-TO-EMITTER VOLTS
92U-12030T
TRANSISTOR
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector ma = 0.1
and emitter current = 0) 120 min volts
Emitter-to-Base Breakdown Voltage (with emitter ma = 0.1
and collector current — 0) 7min volts
Collector-to-Emitter Sustaining Voltage:
With base open, pulsed collector ma = 100*, and base
current — 0 65 min volts
With emitter-to-base resistance = 10 ohms, and pulsed
collector ma = 100* 80 min volts
Collector-to-Emitter Saturation Voltage (with pulsed collector
ma = 150* and base ma = 15) 0.6 max volt
Base-to-Emitter Saturation voltage (with pulsed collector
ma = 150° and base ma = 15) 1.2 max volts
282 RCA Transistor Manual
Collector-Cutoff Current:
With case temperature = 25•C, collector-to-base volts = 60.
and emitter current — 0 0.002 max iia
With case temperature = 150°C, collector-to-base volts = 60,
and emitter current — 0 2max Fa
Emitter-Cutoff Current (with emitter-to-base volts = 5
and collector current — 0 0.002 max lia
Thermal Resistance:
Junction-to-case 97 max °C/watt
Junction-to-ambient 350 max °C/watt
3300
u200
L0
o
04 06 08 1 1.2 1.4 1,6
BASE-TO -EMITTER VOLTS
9201-MOST
15
60
At
2 e
BASE MICROAMPERES •0
0 20 40 60 80 100
COLLECTOR-TO-EMITTER VOLTS 02CM-11175T
In Common-Base Circuit
In Common-Emitter Circuit
TRANSISTOR
Silicon n-p-n type used in awide
variety of small-signal and low-to-
medium power applications in mili- 2N2896
tary and industrial equipment. It
features extremely low leakage char-
acteristics, high pulse beta, high
small-signal beta, very low capacitance, and large gain-bandwidth product.
JEDEC No. TO-18 package; outline 12, Outlines Section. For curve of typical
transfer characteristics, refer to 2N2895.
MAXIMUM RATINGS
Collector-to-Base Voltage 140 max volts
Collector-to-Emitter Voltage:
With base open 90 max volts
With base-to-emitter resistance = 10 ohms or less 140 max volts
Emitter-to-Base Voltage 7max volts
Collector Current 1max ampere
Transistor Dissipation:
At case temperatures up to 25°C 1.8 max watts
At ambient temperatures up to 25°C 0.5 max watt
At case and ambient temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) and Storage —65 to 200 °C
Lead Temperature (for 10 seconds maximum) 255 max °C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector ma
= 0.1 and emitter current — 0) 140 min volts
Emitter-to-Base Breakdown Voltage (with emitter ma = 0.1
and collector current — 0) 7min volts
Collector-to-Emitter Sustaining Voltage:
With base open, pulsed collector ma = 100*, and base
current — 0 90 min volts
With emitter-to-base resistance = 10 ohms, and pulsed
collector ma = 100* 140 min volts
Collector-to-Emitter Saturation Voltage (with pulsed collector
ma = 150* and base ma = 15) 0.6 max volt
Base-to-Emitter Saturation Voltage (with pulsed collector
ma = 150* and base ma = 15) 1.2 max volts
Collector-Cutoff Current:
With case temperature = 25°C, collector-to-base volts = 90,
and emitter current — 0 0.01 max ma
With case temperature = 150°C, collector-to-base volts = 90
and emitter current — 0 10 max pa
Emitter-Cutoff Current (with emitter-to-base volts = 5 and
collector current — 0 0.01 max pa
Thermal Resistance:
Junction-to-case 97 max °C/watt
Junction-to-ambient 350 max °C/watt
In Common-Base Circuit
in Common-Emitter Circuit
8
1
6 ,.....«..........,......
2
4
L \
E
0 25
....-a
SO 75
BASE MICROAMPERES •0
100 125
COLLECTOR-TO-EMITTER VOLTS
ISO 175 200
92CM-120941
TRANSISTOR
MAXIMUM RATINGS
Collector-to-Base Voltage 60 max volts
Collector-to-Emitter Voltage:
With base open 45 max volts
With base-to-emitter resistance = 10 ohms or less 60 max vol ts
Emitter-to-Base Voltage 7max volts
Collector Current 1max ampere
Transistor Dissipation:
At case temperatures up to 25°C 1.8 max watts
At ambient temperatures up to 25°C 0.5 max watt
At case and ambient temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) and Storage —65 to 200 °C
Lead Temperature (for 10 seconds maximum) 255 max °C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector ma = 0.1
and emitter current — 0) 60 min volts
Emitter-to-Base Breakdown Voltage (with emitter ma = 0.1
and collector current — 0) 7min volts
Collector-to-Emitter Sustaining Voltage:
With base open, pulsed collector ma = 100*. and base
current — 0 45 min volts
With emitter-to-base resistance = 10 ohms, and pulsed
collector ma = 100* 60 min volts
Collector-to-Emitter Saturation Voltage (with pulsed collector
ma = 150* and base ma = 15) 1max volt
Base-to-Emitter Saturation Voltage (with pulsed collector
ma = 150* and base ma = 15) 1.3 max volts
Collector-Cutoff Current:
With case temperature = 25°C, collector-to-base volts = 60,
and emitter current — 0 0.05 max tia
With case temperature = 150°C, collector-to-base volts = 60,
and emitter current — 0 50 max pa
Emitter-Cutoff Current (with emitter-to-base volts = 5 and
collector current — 0 0.05 max µa
Thermal Resistance:
Junction-to-case 97 max °C/watt
Junction-to-ambient 350 max °C/watt
Technical Data 235
In Common-Base Circuit
In Common-Emitter Circuit
4, /ee
:= e
..,0.
1.2 1.4 1.6
BASE-TO-EMITTER VOLTS
52CS-121:47
BASE MICROAMPERES
AmMl."
O 10 20 30 40 50 60 70
COLLECTOR-TO-EMITTER VOLTS 92W4- 11711t
TRANSISTOR
This type has an exceptionally low noise figure of 8 db maximum and offers
five levels of beta control from 0.1 ma to 0.5 ampere. JEDEC No. TO-46 pack-
age; outline 18, Outlines Section. This type is electrically identical with type
2N2895.
TRANSISTOR
Silicon n-p-n type used in awide
variety of small-signal and low-to-
medium power applications in mili-
22899
.' tary and industrial equipment. It
features extremely low leakage char-
acteristics, high pulse beta, high
small-signal beta, very low capacitance, and large gain-bandwidth product.
JEDEC No. TO-46 package; outline 18, Outlines Section. This type is elec-
trically identical with type 2N2896.
TRANSISTOR
Silicon n-p-n type used in awide
variety of small-signal and low-to-
2N2900 medium power applications in mili-
tary and industrial equipment. It
features extremely low leakage char-
acteristics, high pulse beta, high
small-signal beta, very low capacitance, and large gain-bandwidth product.
JEDEC No. TO-46 package; outline 18, Outlines Section. This type is elec-
trically identical with type 2N2897.
TRANSISTOR
Silicon n-p-n type used in
switching applications in military and
2N2938 commercial data-processing equip-
ment. This type features high beta
and high switching speed at high c
MAXIMUM RATINGS
Collector-to-Base Voltage 25 max volts
Collector-to-Emitter Voltage 13 max volts
Emitter-to-Base Voltage 5max volts
Collector Current 500 max ma
Transistor Dissipation:
At case temperatures up to 25°C 1max watt
At ambient temperatures up to 25°C 0.3 max watt
At case or ambient temperatures above 25°C See curve page 80
Temperature Range:
Operating —65 to 175 °C
Storage —65 to 200 °C
Lead Temperature (for 10 seconds maximum) 300 max °C
CHARACTERISTICS
Collector-to-Emitter Saturation Voltage (with collector ma
= 50 and base ma = 1.6) 0.4 max volt
Base-to-Emitter Saturation Voltage (with collector ma = 50
and base ma = 1.6) 0.8 to 0.95 volt
Technical Data 287
Collector-Cutoff Current:
With ambient temperature = 25°C, collector-to-emitter volts
= 20, and emitter-to-base volts — 25 max µa
With ambient temperature = 150°C, collector-to-emitter volts
= 20. and emitter-to-base volts — 25 max µa
In Common-Base Circuit
In Common-Emitter Circuit
TRANSISTOR
Germanium p-n-p type used in
audio-frequency driver-amplifier ap-
plications in consumer and indus- 2N2953
trial equipment. This type features
exceptionally high gain under typi-
cal operating conditions for driver
circuits, excellent linearity of small-signal beta and dc beta over its entire
collector-current range, and uniform gain characteristics over the audio-fre-
quency range. All leads are insulated from the case to permit use of the equip-
ment chassis as a heat sink. JEDEC No. TO-1 package; outline 4, Outlines
Section..
MAXIMUM RATINGS
Collector-to-Base Voltage —30 max volts
Collector-to-Emitter Voltage (with base-to-emitter resistance
= 10000 ohms or less) —25 max volts
Emitter-to-Base Voltage —25 max volts
Collector Current —150 max ma
Emitter Current 150 max ma
Transistor Dissipation:
At ambient temperatures up to 55°C 120 max mw
At ambient temperatures above 55°C Derate 2.6 mw/°C
At case temperatures up to 55°C with infinite heat sink 300 max mw
At case temperatures above 55°C with infinite heat sink Derate 6.67 mw/°C
At case temperatures up to 55°C with practical heat sink* 225 max raw
At case temperatures above 55°C with practical heat sink* Derate 5 mw/°C
Temperature Range:
Operating (junction) and Storage —65 to 100 •C
Lead Temperature (for 10 seconds maximum) 255 max °C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with emitter-to-base
volts = —2 and collector ma = —0.05) —30 min volts
Collector-to-Emitter Breakdown Voltage (with base-to-emitter
resistance = 10000 ohms and collector ma = —1) —25 min volts
Emitter-to-Base Breakdown Voltage (with emitter ma = —0.05) —25 min volt ,
"
Collector-Cutoff Current (with collector-to-base volts = —20
and emitter current — 0) —5 max tea
Emitter-Cutoff Current (with emitter-to-base volts = —20 and
collector current = 0) —7.5 max ma
288 RCA Transistor Manual
In Common-Emitter Circuit
I-. 20
IJ
bi
e to
o tc ..‘
-10
o
COLLECTOR-TO -EMITTER VOLTS SUM-121440
POWER TRANSISTOR
MAXIMUM RATINGS
Collector-to-Base Voltage 60 max volts
Collector-to-Emitter Voltage:
With base open 40 max volts
With external base-to-emitter resistance = 10 ohms 50 max volts
With base-to-emitter volts = 1.5 volts 60 max volts
Emitter-to-Base Voltage 5 max volts
Collector Current 0.7 max ampere
Transistor Dissipation:
At case temperatures up to 25°C 5 max watts
At case temperatures above 25°C See curve page 80
Temperature Range:
Operating and Storage —65 to 200 `C
Lead Temperature (for 10 seconds maximum) 235 max °C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector ma = 0.1) 60 min volts
Collector-to-Emitter Sustaining Voltage:
With external base-to-emitter resistance = 0 and collector
ma = 100. 40 min volts
With external base-to-emitter resistance = 10 ohms and
collector ma = 100 50 min volts
Collector-to-Emitter Saturation Voltage (with collector ma
=- 150 and base ma = 15) 1.4 max volts
Base-to-Emitter Saturation Voltage (with collector ma = 150
and base ma = 15) 1.7 max volts
Collector-Cutoff Current (with collector-to-base volts = 30
and emitter current = 0) 0.25 max µa
Emitter-Cutoff Current (with emitter-to-base volts = 4 and
collector current = 0) 0.25 max µa
Thermal Resistance (junction-to-case) 35 max °C/watt
In Common-Bose Circuit
In Common-Emitter Circuit
500
400
6
300
200CURRENT. 2 MA
I
— 4
100
O
I
2 4 e 8 in
COLLECTOR-TO-EMITTER VOLTS SZCIA- 25277
290 RCA Transistor Manual
o
ct
sts
iss
3
e.
sr co
et ¡•
4, re
<V 1
•
/
4
1 I
":"/
e
_,...
04 06 8 .0 12 1.4
BASE-TO-EMITTER VOLTS
P2CS 12329T
POWER TRANSISTOR
Silicon n-p-n type used in a
wide variety of intermediate-power
2N3054 applications in industrial and com-
mercial equipment. This type is par-
ticularly useful in power-switching
circuits, in series and shunt-regula-
tor driver and output stages, and in high-fidelity amplifiers. It is designed to
assure freedom from second breakdown and features a special package which
permits convenient mounting and effective contact with the heat sink. Outline
33, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage 90 max volts
Collector-to-Emitter Voltage:
With base open 55 max volts
With external base-to-emitter resistance = 100 ohms 60 max volts
With base-to-emitter volts = 1.5 volts 90 max volts
Emitter-to-Base Voltage 7max volts
Collector Current 4 max amperes
Base Current 2 max amperes
Transistor Dissipation:
At case temperatures up to 25°C 25 max watts
At case temperatures above 25 °C See curve page 80
Temperature Range:
Operating and Storage --65 to 200 °C
Lead Temperature (for 10 seconds maximum) 235 max °C
100 90
80
..6
51 50
) 1
. 40 30
5 5 ........../
I
_
O 10 20 30 40 50 80 IV
COLLECTOR-TO-EMITTER VOLTS 92CM-12303T
Technical Data 291
CHARACTERISTICS
Collector-to-Emitter Sustaining Voltage:
With external base-to-emitter resistance = 0 and collector
ma = 100 55 min volts
With external base-to-emitter resistance = 100 ohms and
collector ma = 100 60 min volts
Collector-to-Emitter Saturation Voltage (with collector ma
= 500 and base ma — 50) 1max volts
Base-to-Emitter Saturation Voltage (with collector ma = 500
and collector-to-emitter volts — 4) 1.7 max volts
Emitter-Cutoff Current (with emitter-to-base volts = 7 and
collector current = 0) 1max ma
Thermal Resistance (junction-to-case) 7max °C/watt
In Common-Emitter Circuit
AL TRANSFER CHARACTERISTICS
TYPE 2N3054
COLLECTOR-TO-EMITTER VOLTS•4
y
BASE-TO-EMITTER VOLTS
92CS-12305T
POWER TRANSISTOR
MAXIMUM RATINGS
Collector-to-Base Voltage 100 max volts
Collector-to-Emitter Voltage:
With base open 60 max volts
With external base-to-emitter resistance = 100 ohms 70 max volts
With base-to-emitter volts = 1.5 volts 100 max volts
Emitter-to-Base Voltage 7max volts
Collector Current 15 max amperes
Base Current 7max amperes
Transistor Dissipation:
At case temperatures up to 25°C 115 max watts
At case temperatures above 25°C See curve page 80
Temperature Range:
Operating and Storage —65 to 200 °C
Lead Temperature (for 10 seconds maximum) 235 max °C
CHARACTERISTICS
Collector-to-Emitter Sustaining Voltage:
With external base-to-emitter resistance = 0 and collector
ma = 200 60 min volts
With external base-to-emitter resistance = 100 ohms and
collector ma = 200 70 min volts
292 RCA Transistor Manual
In Common-Emitter Circuit
o 700
600
500
400
r
300
e
200 ......
e -
10
1 /0 20 30 40 50 fin 70 so
COLLECTOR-TO-EMITTER VOLTS anoto1-121017
le .4
‘.; /
ioe
05 1.0 1.5 20 25 30
BASE-TO-EMITTER VOLTS
etC8-123071
TRANSISTOR
MAXIMUM RATINGS
Emitter-to-Base Voltage 4max volts
Collector-to-Emitter Voltage:
With base-to-emitter volts = —1.5 85 max volts
With base open 60 max volts
Collector Current 0.5 max ampere
Transistor Dissipation:
At case temperatures up to 25°C 4max watts
At ambient temperatures up to 25°C 1max watts
At case or ambient temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) and Storage —65 to 200 °C
Lead Temperature (for 10 seconds maximum) 255 max °C
CHARACTERISTICS
Emitter-to-Base Breakdown Voltage (with emitter ma = 0.1
and collector current = 0) 4min volts
Collector-to-Emitter Sustaining Breakdown Voltage (with
pulsed collector ma = 10* and base current — 0) 60 min volts
Collector-to-Emitter Breakdown Voltage (with base-to-emitter
volts = —1.5 and collector ma = 0.1) 85 min volts
Collector-Cutoff Current:
With ambient temperature = 25°C, collector-to-base volts
= 30. and emitter current — 0) 0.1 max µa
With ambient temperature = 150°C. collector-to-base volts
= 30, and emitter current — 0) 100 max µa
In Common-Base Circuit
In Common-Emitter Circuit
TRANSISTOR
Silicon n-p-n type used in
switching and pulse-amplifier appli-
2N31 1 9 cations. It is intended primarily for
use in high-voltage high-frequency
amplifiers and high-voltage satura-
tion switches in military and indus-
trial equipment. This type features high collector-to-emitter voltage ratings,
fast rise time, and high power dissipation. JEDEC No. TO-5 package; outline
6, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage 100 max volts
Collector-to-Emitter Voltage:
With base-to-emitter volts = —1.5 100 max volts
With base open 80 max volts
Emitter-to-Base Voltage 4max volts
Collector Current 0.5 max ampere
Transistor Dissipation:
At case temperatures up to 25°C 4max watts
At ambient temperatures up to 25°C 1max watt
At case or ambient temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) and Storage —65 to 200 °C
Lead Temperature (for 10 seconds maximum) 255 max °C
294 RCA Transistor Manual
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector ma --, 010
and emitter current = 0) 100 min volts
Emitter-to-Base Breakdown Voltage (with emitter ma = 0.10
and collector current = 0) 4min volts
Collector-to-Emitter Breakdown Voltage (with base-to-emitter
volts -= 1.5 and collector ma = 0.1) 100 min volts
Collector-to-Emitter Sustaining Breakdown Voltage (with
pulsed collector ma = 10* and base current — 0) 80 min volts
Collector-to-Emitter Saturation Voltage (with base ma = 10
and collector ma = 100) 0.5 max volt
Base-to-Emitter Saturation Voltage (with base ma = 10 and
collector ma = 100) 1.1 max volt
Collector-Cutoff Current:
With ambient temperature = 25°C, collector-to-base volts
= 60, and emitter current — 0 50 max na
With ambient temperature = 150°C, collector-to-base volts
= 60, and emitter current — 0 50 max ma
Emitter-Cutoff current (with ambient temperature = 25°C,
emitter-to-base volts = 3, and collector current — 0) 100 max na
Saturated Switching Turn-on Time (with collector supply volts
= 28, base ma = 10, and collector ma = 100) 40 max nsec
Saturated Switching Turn-off Time (with collector supply volts
= 28, base ma = —10, and collector ma = 100) 700 max sisee
Pulse-Amplifier Rise Time (with collector supply volts = 80
and collector ma = 10) 20 max sisee
In Common-Base Circuit
in Common-Emitter Circuit
CHARACTERISTICS
Forward Breakover Voltage (at case temperature of 100 °C) . 200 min volts
Forward Voltage Drop (at forward current = 3 amperes and
case temperature = 25 °C) 1.5 max volts
Average Blocking Current (at case temperature of 50 °C):
Forward 1.5 max ma
Reverse 1.5 max ma
DC Gate-Trigger Current (at case temperature of 25 °C) 15 max ma
\
TYPE 2N3228
CURRENT WAVEFORM °SINUSOIDAL SUPPLY FREQUENCY •60 CPS SINE WAVE
LOAD °RESISTIVE OR INDUCTIVE CASE TEMPERATURE *50°C
NO
LOAD •RESISTIVE
la• REPETITIVE PEAK REVERSE VOLTAGE•200
-t 60 VOLTS
\N.........................
œw 80 AVERAGE FORWARD CURRENT•3 AMPERES
050
0 1_
-le 70
a L,t
1 11L cs gc. p CONDUCT:0
ANGLE 8Z. - Low
- 0 0.40
rr2
o.
22 30* 120' e 0 1.1
. 30
D uj
4
60
60° 180° 20
L, 50 Q 10
CONDUCTION ANGLE
40
0 I 2 3 4 5 2 4 6 810 2 4 6 81 00 2 4 68
1000
AVERAGE FORWARD CURRENT-AMPERES SURGE CURRENT DURATION-CYCLES
92CS-12375T 92CS-123767
RATING CHART MI FORWARD CHARACTERISTICS
TYPE 2N3228 TYPE 2N3228
4e. I NATURAL COOLING. CASE TEMPERATURE .25 •C
3 9). —SINGLE-PHASE OPERATION. - -
SUPPLY FREQUENCY. v e/
,p CONDUCTION ANGLE .180' 60 CPSy S1NE WAVE e .e
e 4-
k $e
1
O
25 50 75 100 1.5 2 25 3
AMBIENT TEMPERATURE-°C INSTANTANEOUS FORWARD VOLTAGE DROP-VOLTS
92CS-I2377T 92CS-I2379T
GATE-TRIGGER CURRENT CHARACTERISTIC GATE TRIGGER-VOLTAGE CHARACTERISTIC
TYPE 2N3228 TYPE 2N3228
FORWARD CURRENT •0
la 4,
eo'f.o.
ea
1:C,
Foe 044004ftm
QUIRE VOLT4G ,
.••• 4).
0 „e•
• r TR/GGER" IT
woe 4:9
---1 ep
'''''' Cte' e4/
7.
„
-
POWER TRANSISTOR
Silicon n-p-n type used in a
wide variety of aerospace, military,
2N3263 and industrial applications requiring
ahigh degree of reliability. The high
current-handling capability of this
type and its fast switching speed
make it especially suitable in circuits where optimum circuit efficiency is de-
sired. This type is used in switching-control amplifiers, power gates, switching
regulators, dc-dc converters, dc-ac inverters, dc -ri amplifiers, and power os-
cillators. Outline 45, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage 150 max volts
Collector-to-Emitter Voltage (with emitter-to-base volts = —1.5) 150 max volts
Collector-to-Emitter Sustaining Voltage:
With base-to-emitter resistance = 50 ohms or less 110 max volts
With base open 90 max volts
Emitter-to-Base Voltage 7max volts
Collector Current 25 max amperes
Base Current 10 max amperes
Transistor Dissipation See Dissipation Curve
Temperature Range:
Operating (junction) and Storage —65 to 200 `C
CHARACTERISTICS
Emitter-to-Base Voltage (with emitter-to-base ampere = 0.02
and collector current = 0) 7min volts
Collector-to-Emitter Sustaining Voltage:
With collector ampere = 0.2 and base current — 90 min volts
With external base-to-emitter resistance = 50 ohms or less,
collector ampere = 0.2, and base current = 110 min volts
Collector-to-Emitter Saturation Voltage (with pulsed collector
amperes = 15° and base amperes = 1.2) 0.75 max volts
Base-to-Emitter Saturation Voltage (with pulsed collector
amperes = 15° and base amperes = 1.2) 1.60 max volts
Collector-Cutoff Current:
With case temperature = 25°C, collector-to-base volts
= 80, and base current — 4 max ma
With case temperature = 125°C, collector-to-base volts
= 80. and base current — 4 max ma
Emitter-Cutoff Current:
With case temperature = 25°C, emitter-to-base volts
= 5, and collector current — 5 max ma
With case temperature = 125 °C, emitter-to-base volts
= 5, and collector current — 5 max ma
Collector Current (with base reversed biased, collector-
to-emitter volts = 150, and emitter-to-base volts = 1.5) 20 max ma
Thermal Resistance (with junction temperature = 100 °C,
collector-to-emitter volts = 40, and collector amperes = 0.5) 1.5 max °C/watt
Saturated Switching Turn-on Time (with dc collector supply
volts = 30, turn-on and turn-off base amperes = 1.2, and
collector amperes = 15) 0.5 max µsec
Saturated Switching Storage Time (with de collector supply
volts = 30, turn-on and turn-off base amperes = 1.2, and
collector amperes = 15) 1.5 max itsec
Saturated Switching Fall Time (with dc collector supply voltage
= 30, turn-on and turn-off base amperes = 1.2, and collector
amperes = 15) 0.5 max ,sec
Second Breakdown Characteristics (safe-operating region) :
Current at second breakdown with collector-to-emitter
volts — 75 350 min ma
Energy at second breakdown with emitter-to-base volts = —6,
collector amperes = 10, base-to-emitter resistance = 20 ohms,
and inductance = 40 2 min mjoules
In Common-Base Circuit
In Common-Emitter Circuit
600
e e e,
•
4..
• 4.-
2
u
1
4
, 400 ta
jj
„ 8 ,..
200 , __
i
cAsE .. -›
, ,
C
O
0 02 04 0.
6 0.
6 1.2 1.4 oa 04 0.6 08 12 L4 LS
BASE-TO-EMITTER VOLTS BASE-TO-EMITTER VOLTS
92CS-12436T 52CS-24427
DISSIPATION CHARACTERISTICS
TYPE 2N3263
FOR MAX MUM CASE TEMPERATURES ABOVE
- 75 C. DERATE LINEARLY AT 0.66 Wi °C. -
Ito)
I25
,
11 IC* TS
I-0
r
ege= 75
•. 1
c zerezeryirerfe.___rr_____.
MU»
Fr. 50
25
o
COLLECTOR-TO-EMITTER VOLTS
ses-aber
POWER TRANSISTOR
Silicon n-p-n type used in a
wide variety of aerospace, military,
a
and
high
industrial
degree of
applications
reliability. requiring
The high 2N3264
current-handling capability of this
type and its fast switching speed
make it especially suitable in circuits where optimum circuit efficiency is de-
sired. This type is used in switching-control amplifiers, power gates, switching
regulators, dc-dc converters, dc-ac inverters, dc-rf amplifiers, and power os-
cillators. Outline 45, Outlines Section. For curves of transfer characteristics,
refer to type 2N3263.
298 RCA Transistor Manual
MAXIMUM RATINGS
Collector-to-Base Voltage 120 max volts
Collector-to-Emitter Voltage (with emitter-to-base volts = —1.5) 120 max volts
Collector-to-Emitter Sustaining Voltage:
With base-to-emitter resistance = 50 ohms or less 80 max volts
With base open 60 max volts
Emitter-to-Base Voltage 7max volts
Collector Current 25 max amperes
Base Current 10 max amperes
Transistor Dissipation See Dissipation Curve
Temperature Range:
Operating (junction) and Storage —65 to 200 *C
DISSIPATION CHARACTERISTICS
. . .
TYPE EN3264
FOR mAXiMuM CASE TEMPERATURES ABOVE
- 75 C, DERATE LINEARLY AT 0.66 W/T. '
125
,.--713--- .-
.CAf-TfrgirTlegtiZi: Q-
o
COLLECTOR-TO-EMITTER VOLTS
SZCS-125121"
CHARACTERISTICS
Emitter-to-Base Voltage (with emitter-to-base ampere = 0.02
and collector current — 0) 7min volts
Collector-to-Emitter Sustaining Voltage:
With collector ampere 0.2 and base current — 60 min volts
With external base-to-emitter resistance = 50 ohms or less,
collector ampere = 0.2, and base current — 80 min volts
Collector-to-Emitter Saturation Voltage (with pulsed collector
amperes = 15* and base amperes = 1.2) 1.20 max volts
Base-to-Emitter Saturation Voltage (with pulsed collector
amperes = 15* and base amperes = 1.2) 1.80 max volts
Collector-Cutoff Current:
With case temperature = 25°C, collector-to-base volts = 60.
and base current — 10 max ma
With case temperature = 125°C, collector-to-base volts = 60
and base current — 10 max ma
Emitter-Cutoff Current:
With case temperature = 25°C, emitter-to-base volts = 5, and
collector current — 15 max ma
With case temperature = 125°C, emitter-to-base volts .= 5.
and collector current — 15 max ma
Collector Current (with base reversed biased, collector-to-emitter
volts = 120. and emitter-to-base volts = 1.5) 20 max ma
Thermal Resistance (with junction temperature = 100°C.
collector-to-emitter volts = 40, and collector amperes = 0.5) 1.5 max °C/watt
Saturated Switching Turn-on Time (with de collector supply
volts = 30, turn-on and turn-off base amperes = 1.2, and
collector amperes = 15) 0.5 max µsec
Saturated Switching Storage Time with de collector supply
volts =. 30, turn-on and turn-off base amperes = 1.2, and
collector amperes = 15) 1.5 max µsec
Saturated Switching Fall Time (with dc collector supply voltage
= 30, base amperes = 1.2, and collector amperes — 15) 0.5 max µsec
Second Breakdown Characteristics (safe-operating region):
Current at second breakdown with collector-to-emitter
volts — 75 700 min ma
Energy at second breakdown with emitter-to-base volts = —6,
collector amperes = 10, base-to-emitter resistance = 20 ohms,
and inductance = 40 gh 2min rajoules
In Common-Base Circuit
In Common-Emitter Circuit
POWER TRANSISTOR
DISSIPATION CHARACTERISTICS
TYPE 2N326S
FOR MAXIMUM CASE TEMPERATURES ABOVE
- 7e C, DERATE LINEARLY AT 1WPC.
mzi 125 75
tn;
áI 100 /00
at.7,- 75
125
M-
R e50
25
lo
CASE TEMPERATU •175 C
1
O 10 20 30 40 50 60 70 BO SO
COLLECTOR-TO-EMITTER VOLTS
92C5-12911T
POWER TRANSISTOR
dilators. Outline 46, Outlines Section. This type is electrically identical with
type 2N3264 except for the following items:
Transistor Dissipation See Dissipation Curve
Thermal Resistance (with junction temperature = 100°C.
collector-to-emitter volts = 40, and collector ampere = 05) 1max °C/watt
DISSIPATION CHARACTERISTICS
TYPE 2N3266
FOR MAXIMUM CASE TEMPERATURES ABOVE
75 C.DERATE LINEARLY AT IW/*C.
7
oz.125
Sta
á 1too 100
If&
2Iz, 75 125
et,
Rol 50 150
35
25
CASE TEMPERATU •175.0
0 10 20 30 40 50 60 70 80 90
COLLECTOR-TO-EMITTER U
s0025e,
TRIPLE DIODE
TRANSISTOR
MAXIMUM RATINGS
Collector-to-Base Voltage (with emitter open) —25 max volts
Collector-to-Emitter Voltage (with emitter-to-base volts = —1) —24 max volts
Emitter-to-Base Voltage (with collector open) —12 max volts
—200 max ma
Collector Current
Emitter Current 200 max ma
Transistor Dissipation:
At ambient temperatures up to 25°C 150 max mw
At ambient temperatures above 25°C See curve page 80
Ambient-Temperature Range:
Operating —65 to 85 °C
Storage —65 to 100 °C
Lead Temperature (for 10 seconds maximum) 235 max °C
Technical Data 301
CHARACTERISTICS
Base-to-Emitter Saturation Voltage:
With collector ma = —12 and base ma = —0.4 —0.35 max volt
With collector ma = —24 and base ma — —1 —0.4 max volt
Collector-to-Emitter Saturation Voltage:
With collector ma = —12 and base ma = —0.4 —0.15 max volt
With collector ma = —24 and base ma — —1 —0.2 max volt
Collector-Cutoff Current (with collector-to-base volts = —12
and emitter current — 0) —5 max µa
Stored Base Charge (with collector ma = —10 and base ma = —1) 1400 max pcoul
In Common-Base Circuit
In Common-Emitter Circuit
POWER TRANSISTOR
Germanium p-n-p type used in
high-fidelity audio-frequency ampli-
fier applications. This type is in-
tended primarily for use in push- 40022
z pull class B output circuits requiring
low distortion, high power output,
and wide frequency response. It can also be used in class A af power ampli-
fiers in driver- or output-stage circuits. This type features high collector cur-
rent and dissipation capabilities, and exceptional linearly of characteristics
over the full range of collector current. JEDEC No. TO-3 package; outline 5,
Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage —32 max volts
Collector-to-Emitter Voltage (with base-to-emitter resistance
= 30 ohms) —32 max volts
Emitter-to-Base Voltage —5 max volts
Collector Current —5 max amperes
Base Current —1 max ampere
Transistor Dissipation:
At mounting flange temperatures up to 81°C 12.5 max watts
At mounting flange temperatures above 81°C Derate 0.66 watt/°C
Temperature Range:
Operating (junction) and Storage —65 to 100 °C
Lead Temperature (for 10 seconds maximum) 255 max OC
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector ma = —5
and emitter current — 0) —32 min volts
Collector-to-Emitter Breakdown Voltage (with collector ma
= —200 and base-to-emitter resistance = 30 ohms) —32 min volts
Emitter-to-Base Breakdown Voltage (with emitter ma = —200
and collector current — 0) —5 min volts
Base-to-Emitter Voltage (with collector-to-base volts = —10
and collector ma = —50) —0.18 volt
Collector-Cutoff Current (with collector-to-base volts = —30
and emitter current — 0) —1 max ma
Collector-Cutoff Saturation Current (with collector-to-base
volts = —0.5 and emitter current — 0) —0.1 max ma
Thermal Resistance (junction-to-case) 1.5 max °C/watt
In Common-Emitter Circuit
POWER TRANSISTOR
Germanium p-n-p type used in
high-fidelity audio-frequency ampli-
40050 fier applications. This type is in-
tended primarily for use in push-
pull class B output circuits requiring
low distortion and wide frequency
response. It can also be used in class A af power amplifiers in driver- or output-
stage circuits. This type features high dc beta and linear gain characteristics
up to five amperes. JEDEC No. TO-3 package; outline 5, Outlines Section.
MAXIMUM RATINGS
Collector-to-Base Voltage —40 max volts
Collector-to-Emitter Voltage —40 max volts
Emitter-to-Base Voltage —5 max volts
Collector Current —5 max amperes
Base Current —1 max ampere
Transistor Dissipation:
At mounting flange temperatures up to 81°C 12.5 max watts
At mounting flange temperatures above 81°C Derate 0.66 watt/°C
Temperature Range:
Operating (junction) and Storage —65 to 100 °C
Lead Temperature (for 10 seconds maximum) 255 max °C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector ma = —5
and emitter current = 0) —40 mln volts
Collector-to-Emitter Breakdown Voltage (with collector ma
= —600 and base-to-emitter resistance = 68 ohms) —40 min volts
Emitter-to-Base Breakdown Voltage (with emitter ma = —2
and collector current — 0) —5 min volts
Base-to-Emitter Voltage (with collector-to-base volts = —10
and collector ma = —50) 0.17 volt
Collector-Cutoff Current (with collector-to-base volts = —30
and emitter current = 0) —500 max eLa
Collector-Cutoff Saturation Current (with collector-to-base
volts = —0.5 and emitter current — 0) —100 ma
Thermal Resistance (junction-to-case) 1.5 max °C/watt
In Common-Emitter Circuit
POWER TRANSISTOR
CHARACTERISTICS
Collector-to-Base Breakdown Voltage —50 min volts
Collector-to-Emitter Breakdown Voltage —50 min volts
40076
See RCA TUNNEL DIODE CHART starting on
page 324 for complete data on these tunnel diodes. to
40079
304 RCA Transistor Manual
TRANSISTOR
Silicon n-p-n type designed spe-
cifically for use as an oscillator in
40080 27-Mc 5-watt citizens band applica-
tions. JEDEC No. TO-39 package;
outline 32, Outlines Section.
MAXIMUM RATINGS
Collector-to-Emitter Voltage (with base open) 30 max volts
Collector Current 250 max ma
Transistor Dissipation:
At ambient temperatures up to 25°C 0.5 max watt
At ambient temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) and Storage —65 to 175
CHARACTERISTICS
Collector-to-Emitter Voltage (with collector ma = 10 and
base current — 0) 30 min volts
Collector-Cutoff Current (with collector-to-base volts = 15 and
emitter current = 0) 10 max sa
TRANSISTOR
Silicon n-p-n type designed spe-
cifically for use as a driver in 27-Mc
40081 5-watt citizens band applications.
JEDEC No. TO-39 package; outline
32, Outlines Section.
MAXIMUM RATINGS
Collector-to-Emitter Voltage (with reverse bias between base
and emitter) 60 max volts
Emitter-to-Base Voltage (with collector open) 2max volts
Collector Current 250 max ma
Transistor Dissipation:
At case temperatures up to 25°C 2max watts
At case temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) and Storage —65 to 175 *c
CHARACTERISTICS
Collector-to-Emitter Voltage (with base-to-emitter volts = —0.5
and collector µa = 100) 60 min volts
Emitter-to-Base Voltage (with emitter µa = 500 and collector
current = 0) 2min volts
Collector-Cutoff Current (with collector-to-base volts = 15 and
emitter current = 0) 10 max pa
TRANSISTOR
Silicon n-p-n type designed spe-
cifically for use as a power ampli-
40082 fier in 27-Mc 5-watt citizens band
applications. JEDEC No. TO-39
package; outline 32, Outlines Section.
Technical Data 305
MAXIMUM RATINGS
Collector-to-Emitter Voltage (with reverse bias between base
and emitter) 60 max volts
Emitter-to-Base Voltage (with collector open) 2.5 max volts
Collector Current 1.5 max amperes
Transistor Dissipation:
At case temperatures 1. to 25°C 5max watts
At case temperatures above 25°C See curve Page 80
Temperature
Operating (junction) and Storage —65 to 175 `C
CHARACTERISTICS
Collector-to-Emitter Voltage (with base-to-emitter volts
= —0.5 and collector ma = 500) 60 min volts
Emitter-to-Base Voltage (with emitter sa = 500 and collector *
current — 0) 2.5 min volts
Collector-Cutoff Current (with collector-to-base volts
= 15 and emitter current = 0) 10 max ta
TRANSISTOR
MAXIMUM RATINGS
Collector-to-Base Voltage 60 max volts
Collector-to-Emitter Voltage:
With base open 40 max volts
With base-to-emitter resistance = 10 ohms 50 max volts
Emitter-to-Base Voltage 5max volts
Collector Current 1max ampere
Transistor Dissipation:
At ambient temperatures up to 25°C 0.5 max watt
At car temperatures up to 25°C 1.8 max watts
At ambient or case temperatures above 25°C See curve page 80
Temperature Range:
Operating (junction) and Storage —65 to 200 'C
Lead Temperature (for 10 seconds maximum) 225 max °C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (with collector ma = 0.1) 60 min volts
Emitter-to-Base Breakdown Voltage (with emitter ma = 0.1) 5min volts
Collector-to-Emitter Sustaining Voltage:
With base open and pulsed collector ma = 100* 40 min volts
With external base-to-emitter resistance = 10 ohms and
pulsed collector ma = 100° 50 min volts
Collector-to-Emitter Saturation Voltage (with pulsed collector
ma = 150' and base ma = 15) 1.4 max volts
Base-to-Emitter Saturation Voltage (with pulsed collector ma
= 150* and base ma = 15) 1.7 max volts
Collector-Cutoff Current (with collector-to-base volts = 30
and emitter current — 0) 0.25 max sa
Emitter-Cutoff Current (with emitter-to-base volts = 4 and
collector current — 0) 0.25 max sa
Thermal Resistance:
Junction-to-case
97 max °C/watt
Junction-to-ambient 350 max °C/watt
In Common-Base Circuit
In Common-Emitter Circuit
SILICON RECTIFIER
Hermetically sealed 10-ampere
type for use at peak reverse voltages
40108 up to 50 volts. This type is used in
generator-type power supplies in
mobile equipment; dc-to-dc con-
verters and battery chargers; power
supplies for aircraft, marine, and missile equipment; transmitters, rf genera-
tors, and dc-motor power supplies; machine-tool controls; welding and electro-
plating equipment; dc-blocking service; magnetic amplifiers; and awide variety
of other industrial power-control applications. JEDEC No. DO-4 package; out-
line 2, Outlines Section.
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive load
CHARACTERISTICS
Maximum Reverse Current:
Static (at case temperature = 25°C) 0.075 ma
Dynamic (at case temperature = 150 °C) 2.0 ma
Maximum Forward Voltage Drop (average value) 0.60 volt
SILICON RECTIFIER
This type is a reverse-polarity
version of type 40108. JEDEC No.
40108R DO-4 package; outline 2, Outlines
Section.
SILICON RECTIFIER
Hermetically sealed 10-ampere It's
type for use at peak reverse voltages
40109 up to 100 volts. This type is used in
generator-type power supplies in
mobile equipment; dc-to-dc convert-
ers and battery chargers; power sup-
plies for aircraft, marine, and missile equipment; transmitters, rf generators,
and dc-motor power supplies; machine-tool controls; welding and electroplat-
ing equipment; dc-blocking service; magnetic amplifiers; and a wide variety
of other industrial power-control applications. JEDEC No. DO-4 package; out-
line 2, Outlines Section. This type is identical with type 40108 except for the
following items:
Technical Data 307
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive load
SILICON RECTIFIER
Hermetically sealed 10-ampere
type for use at peak reverse volt-
ages up to 200 volts. This type is
used in generator-type power sup- 40110
plies in mobile equipment; dc-to-dc
converters and battery chargers;
power supplies for aircraft, marine, and missile equipment; transmitters, rf
generators, and dc-motor power supplies; machine-tool controls; welding and
electroplating equipment; dc-blocking service; magnetic amplifiers; and a wide
variety of other industrial power-control applications. JEDEC No. DO-4 pack-
age; outline 2, Outlines Section. This type is identical with type 40108 except
for the following items:
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive Load
CHARACTERISTICS
Maximum Reverse Current:
Dynamic (at case temperature = 150*C) 1.5 ma
SILICON RECTIFIER
This type is a reverse-polarity
version of type 40110. JEDEC No.
DO-4 package; outline 2, Outlines 40110R
Section.
SILICON RECTIFIER
Hermetically sealed 10-ampere
type for use at peak reverse volt-
ages up to 300 volts. This type is 40111
used in generator-type power sup-
plies in mobile equipment; dc-to-dc
converters and battery chargers;
power supplies for aircraft, marine, and missile equipment; transmitters, rf
generators, and dc-motor power supplies; machine-tool controls; welding and
electroplating equipment; dc-blocking service; magnetic amplifiers; and a wide
variety of other industrial power-control applications. JEDEC No. DO-4 pack-
age; outline 2, Outlines Section. This type is identical with type 40108 except
for the following items:
308 RCA Transistor Manual
MAXIMUM RATINGS
For power-supply frequency of 60 cPS, single-
phase operation, with resistive or inductive load
CHARACTERISTICS
Maximum Reverse Current:
Dynamic (at case temperature = 150°C) 1.5 ma
SILICON RECTIFIER
Hermetically sealed 10-ampere
type for use at peak reverse volt-
401 '12 ages up to 400 volts. This type is
used in generator-type power sup-
plies in mobile equipment; dc-to-dc
converters and battery chargers; etc
power supplies for aircraft, marine, and missile equipment; transmitters, rf
generators, and dc-motor power supplies; machine-tool controls; welding and
electroplating equipment; dc-blocking service; magnetic amplifiers; and a wide
variety of other industrial power-control applications. JEDEC No. DO-4 pack-
age; outline 2, Outlines Section. This type is identical with type 40108 except
for the following items:
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive load
Peak Reverse Voltage 400 max volts
DC Blocking Voltage 400 max volts
CHARACTERISTICS
Maximum Reverse Current:
Dynamic (at case temperature = 150°C) 1.0 ma
SILICON RECTIFIER
This type is a reverse-polarity
version of type 40112. JEDEC No.
40112R DO-4 package; outline 2, Outlines
Section.
SILICON RECTIFIER
Hermetically sealed 10-ampere
type for use at peak reverse volt-
401 1 3 ages up to 500 volts. This type is
used in generator-type power sup-
plies in mobile equipment; dc-to-dc
converters and battery chargers;
power supplies for aircraft, marine, and missile equipment; transmitters, rf
generators, and dc-motor power supplies; machine-tool controls; welding and
electroplating equipment; dc-blocking service; magnetic amplifiers; and a wide
Technical Data 309
CHARACTERISTICS
Maximum Reverse Current:
Dynamic (at case temperature = 150°C) 0.85 ma
SILICON RECTIFIER
This type is a reverse-polarity
version of type 40113. JEDEC No.
DO-4 package; outline 2, Outlines 40113R
Section.
SILICON RECTIFIER
Hermetically sealed 10-ampere
type for use at peak reverse volt-
ages up to 600 volts. This type is 40114
used in generator-type power sup-
plies in mobile equipment; dc-to-dc
converters and battery chargers;
power supplies for aircraft, marine, and missile equipment; transmitters, rf
generators, and dc-motor power supplies; machine-tool controls; welding and
electroplating equipment; dc-blocking service; magnetic amplifiers; and a wide
variety of other industrial power-control applications. JEDEC No. DO-4 pack-
age; outline 2, Outlines Section. This type is identical with type 40108 except
for the following items:
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive load
CHARACTERISTICS
Maximum Reverse Current:
Dynamic (at case temperature = 150°C) 075 ma
SILICON RECTIFIER
This type is a reverse-polarity
version of type 40114. JEDEC No.
DO-4 package; outline 2, Outlines 40114R
Section.
SILICON RECTIFIER
Hermetically sealed 10-ampere
type for use at peak reverse volt-
used
ages up
in generator-type
to 800 volts. This
power
type
sup-
is 40115
plies in mobile equipment; dc-to-dc
converters and battery chargers;
power supplies for aircraft, marine, and missile equipment; transmitters, rf
generators, and dc-motor power supplies; machine-tool controls; welding and
310 RCA Transistor Manual
CHARACTER ISTICS
Maximum Reverse Current:
Dynamic (at case temperature = 150°C) 0.65 Ma
SILICON RECTIFIER
This type is a reverse-polarity
version of type 40115. JEDEC No.
40115R DO-4 package; outline 2, Outlines
Section. ( Î )
SILICON RECTIFIER
Hermetically sealed 10-ampere
type for use at peak reverse volt-
40116 ages up to 1000 volts. This type is
used in generator-type power sup-
plies in mobile equipment; dc-to-dc
converters and battery chargers;
power supplies for aircraft, marine, and missile equipment; transmitters, rf
generators, and dc-motor power supplies; machine-tool controls; welding and
electroplating equipment; dc-blocking service; magnetic amplifiers; and a wide
variety of other industrial power-control applications. JEDEC No. DO-4 pack-
age; outline 2, Outlines Section. This type is identical with type 40108 except
for the following items:
MAXIMUM RATINGS
For power-supply frequency of 60 cps, single-
phase operation, with resistive or inductive load
CHARACTERISTICS
Maximum Reverse Current:
Dynamic (at case temperature = 150°C) 0.50 Ma
SILICON RECTIFIER
This type is a reverse-polarity
version of type 40116. JEDEC No.
40116R DO-4 package; outline 2, Outlines
Section.
SILICON RECTIFIER
Hermetically sealed 18-ampere
type for use at peak reverse volts
40208 up to 50 volts. This type is used in
generator-type power supplies in
mobile equipment; dc-to-dc con-
verters and battery chargers; power
supplies for aircraft, marine, and missile equipment; transmitters, rf genera-
tors, and dc-motor power supplies; machine-tool controls; welding and elec-
Technical Data 311
CHARACTERISTICS
Maximum Reverse Current:
Static (at case temperature = 25°C) 0.10 ma
Dynamic (at case temperature = 150°C) 3.0 ma
Maximum Forward Voltage Drop (average value) 0.65 volt
SILICON RECTIFIER
This type is a reverse-polarity
version of type 40208. JEDEC No.
DO-5 package; outline 3, Outlines 40208R
Section.
SILICON RECTIFIER
Hermetically sealed 18-ampere
type for use at peak reverse volts up
to 100 volts. This type is used in gen-
erator-type power supplies in mo- 40209
bile equipment; dc-to-de converters
and battery chargers; power supplies
for aircraft, marine, and missile equipment; transmitters, rf generators, and
de-motor power supplies; machine-tool controls; welding and electroplating
equipment; de-blocking service; magnetic amplifiers; and a wide variety of
other industrial power-control applications. JEDEC No. DO-5 package; outline
3, Outlines Section. This type is identical with type 40208 except for the fol-
lowing items:
MAXIMUM RATINGS
Peak Reverse Voltage 100 max volts
DC Blocking Voltage 100 max volts
SILICON RECTIFIER
This type is a reverse-polarity
version of type 40209. JEDEC No.
DO-5 package; outline 3, Outlines
Section.
40209R
SILICON RECTIFIER
Hermetically sealed 18-ampere
type for use at peak reverse volts
generator-type
up to 200 volts. This
powertype
supplies
is used in 40210
mobile equipment; dc-to-de con-
verters and battery chargers; power
supplies for aircraft, marine, and missile equipment; transmitters, rf genera-
tors, and de-motor power supplies; machine-tool controls; welding and elec-
troplating equipment; de-blocking service; magnetic amplifiers; and a wide
variety of other industrial power-control applications. JEDEC No. DO-5 pack-
312 RCA Transistor Manual
age; outline 3, Outlines Section. This type is identical with type 40208 except
for the following items:
MAXIMUM RATINGS
Peak Reverse Voltage 200 max volts
DC Blocking Voltage 200 max volts
CHARACTERISTICS
Maximum Reverse Current:
Dynamic (at case temperature = 150°C) 2.5 ma
SILICON RECTIFIER
SILICON RECTIFIER
CHARACTERISTICS
Maximum Reverse Current:
Dynamic (at case temperature = 150 °C) 2.5 ma
SILICON RECTIFIER
SILICON RECTIFIER
3, Outlines Section. This type is identical with type 40208 except for the fol-
lowing items:
MAXIMUM RATINGS
Peak Reverse Voltage 400 max volts
DC Blocking Voltage 400 max volts
CHARACTERISTICS
Maximum Reverse Current:
Dynamic (at case temperature - 1511 -C1 2.0 ma
SILICON RECTIFIER
This type is a reverse-polarity
version of type 40212. JEDEC No.
DO-5 package; outline 3, Outlines 40212R
A Section.
SILICON RECTIFIER
Hermetically sealed 18-ampere
type for use at peak reverse volts
up to 500 volts. This type is used in
generator-type power supplies in 40213
mobile equipment; dc-to-dc con-
verters and battery chargers; power
supplies for aircraft, marine, and missile equipment; transmitters, rf genera-
tors, and dc-motor power supplies; machine-tool controls; welding and elec-
troplating equipment; dc-blocking service; magnetic amplifiers; and a wide
variety of other industrial power-control applications. JEDEC No. DO-5 pack-
age; outline 3, Outlines Section. This type is identical with type 40208 except
for the following items:
MAXIMUM RATINGS
Peak Reverse Voltage 500 max volts
DC Blocking Voltage 500 max volts
CHARACTERISTICS
Maximum Reverse Current:
Dynamic (at case temperature = 150°C) 1.75 ma
SILICON RECTIFIER
This type is a reverse-polarity
version of type 40213. JEDEC No.
DO-5 package; outline 3, Outlines 40213R
Section.
SILICON RECTIFIER
Hermetically sealed 18-ampere
type for use at peak reverse volts
up
in generator-type
to 600 volts. This
power
type
supplies
is used
in 40214
mobile equipment; dc-to-dc convert-
ers and battery chargers; power
supplies for aircraft, marine, and missile equipment; transmitters, rf genera-
tors, and dc-motor power supplies; machine-tool controls; welding and elec-
troplating equipment; dc-blocking service; magnetic amplifiers; and a wide
variety of other industrial power-control applications. JEDEC No. DO-5 pack-.
314 RCA Transistor Manual
age; outline 3, Outlines Section. This type is identical with type 40208 except
for the following items:
MAXIMUM RATINGS
Peak Reverse Voltage 600 max volts
DC Blocking Voltage 600 max volts
CHARACTERISTICS
Maximum Reverse Current:
Dynamic (at case temperature = 150°C) 1.5 ma
SILICON RECTIFIER
This type is a reverse-polarity
version of type 40214. JEDEC No.
40214R DO-5 package; outline 3, Outlines
Section.
MAXIMUM RATINGS
Peak Reverse Voltage:
Repetitive 600 max volts
Non-repetitive 720 max volts
Peak Forward Blocking Voltage (repetitive) 600 max volts
Peak Forward Gate Current 2max amperes
Peak Gate Voltage:
Forward 10 max volts
Reverse 5max volts
Peak Gate Power 5max watts
Average Gate Power 0.5 max watt
Temperature Range:
Operating (case) —65 to 125 °C
Storage —65 to 150 °C
CHARACTERISTICS
Forward Breakover Voltage (at case temperature of 125°C) 600 min volts
DC Gate-Trigger Voltage:
3.5 max volts
At case temperature of —40°C 3.7 max volts
At case temperature of —65°C
0.3 min volt
At case temperature of 100°C
At case temperature of 125°C 0.25 min volt
Instantaneous Blocking Current (at case temperature of 125°C) :
10 max ma
Forward 10 max ma
Reverse
DC Gate-Trigger Current: 150 max ma
At case temperature of —65°C
80 max ma
At case temperature of 25°C 45 max ma
At case temperature of 125°C
Holding Current (at case temperature of 125°C) 8 ma
2max °C/watt
Thermal Resistance (junction-to-case)
Technical Data 315
COVER
- BASE
EMITTER CONNECTION
CONNECTION
ACTIVE GLASS-TO-METAL
TRANSISTOR ELEMENT SEAL
HEADER
INDEX TAB
BASE LEAD
COLLECTOR LEAD
EMITTER LEAD (CONNECTED TO CASE)
TYPICAL SILICON
SWITCHING TRANSISTOR
316 RCA Transistor Manual
SILICON RECTIFIERS
Hermetically sealed types used
CR101 in power-supply applications at
peak reverse voltages up to 10,000
SERIES volts. These types consist of series-
connected silicon rectifier cells
shunted by a voltage-equalizing
network and molded into a compact, rugged case of insulating material.
The integral resistance-capacitance network equalizes the reverse voltages
across the rectifier cells under both steady-state and transient conditions.
These types are designed to meet stringent environmental and mechanical
specifications. Outline 29, Outlines Section.
Common Parameters
CHARACTER-
MAXIMUM RATINGS (Half-wave Rectifier Service) ISTICS
For power-supply frequency of 60 cps, single-phase
operation, with resistive or inductive load Max
Peak Transient RMS DC Average Forward Shunt
Reverse Reverse Supply Blocking Forward Voltage Capaci-
RCA Voltage Voltage** Voltage Voltage Currentt Drop4: tance
Type (Volts) (Volts) (volts) (volts) (ma) (volts)
•For one-half cycle, sine-wave; for one or more cycles, see Rating Chart I. Super-
imposed on device operating within maximum voltage, current, and temperature
ratings; may be repeated after sufficient time has elapsed for the device to return to
the presurge thermal-equilibrium conditions.
•• Non-repetitive, for duration of 5 milliseconds maximum. The value given is for am-
bient temperatures from 60 to 125°C; for ambient temperatures up to 60°C, see
Rating Chart II.
fFor ambient temperatures up to 60°C; for temperatures above 60°C, see Rating
Chart III.
For complete cycle and for operation at maximum ratings. For instantaneous forward-
voltage drop, see Instantaneous Forward Characteristics Curve.
Technical Data 317
RATING CHART Tr
RATING CHART r
CR101 SERIES
CR101 SERIES
0._
SUPPLY FREQUENCY. 0 CPS SNE WAVE 5r
LOAD: RESISTIVE OR INDUCTIVE.
e/ 130
è 120
.tg
à 541
110
2 4 6810 2 4 6 8100 -75 -50 -25 0 25 50 75 100 125
SURGE-CURRENT DURATION-CYCLES
AMBIENT TEMPERATURE- °C
92CS-11123Ti
92CS-1170ITt
1
J.'
o c91------ O.
---, /
E875 CR101
CR102 i
750 CRIO3
o I
CR104 8 CR105
625
CRIOk 8 •:„, ,
500 CR107 TO CR 110
6
375
250
125 2 / •
0
........„ ,
-
o
-75 -50 -25 0 25 50 75 100 125
AMBIENT TEMPERATURE-t INSTANTANEOUS FORWARD VOLTS
.82c9-1112473 82[M-11122T1
318 RCA Transistor ManuaW
SILICON RECTIFIERS
Hermetically sealed types used
CR201 in power-supply applications at
peak reverse voltages up to 12,000
SERIES volts. These types consist of series-
connected, matched silicon rectifier
cells molded into a compact, rugged
case of insulating material. The matched cells assure equalization of internal-
voltages under both steady-state and transient conditions. These types are
designed to meet stringent environmental and mechanical specifications.
Outline 30, Outlines Section.
Common Parameters
CHARAC-
MAXIMUM RATINGS (Half-wave Rectifier Service) TERISTICS
For power-supply frequency of 60 cps. single-phase
operation, with resistive or inductive load Max
Peak Transient RMS DC Forward
RCA Reverse Reverse Supply Blocking Voltage
Type Voltage Voltage Voltage Voltage Drop*
(volts) (volts) (volts) (volts) (volts)
•For ambient temperatures up to 60°C; for temperatures above 60°C, see Rating Chart I.
•• For one-half cycle, sine wave; for one or more cycles. see Rating Chart II. Super-
imposed on device operating within maximum voltage, current, and temperature
ratings; may be repeated after sufficient time has elapsed for the device to return to
the presurge thermal-equilibrium conditions.
tNon-repetitive, for duration of 5 milliseconds maximum. The value given is for
ambient temperature from 60 to I25°C; for ambient temperatures up to 60°C, see
Rating Chart III.
For complete cycle and for operation at maximum ratings. For instantaneous forward
voltage drop, see Instantaneous Forward Characteristics Curve.
Technical Data 319
RATING. CHART I
IIIIIII
-CR201 SERIES -
en FOR DC AND POLYPHASE OPERATION.
MULTIPLY MAX1MUM-AVERAGE-
- FORWARD-CURRENT RATING FOR -
a EACH RECTIFIER BY THE FOLLOW-
2
- ING FACTOR: _
TYPE OF OPERATION FACTOR
_ DIRECT CURRENT 1.10 -
o THREE PHASE 0.89
SIX PHASE 0.68
e400 - LOAD: RESISTIVE OR INDUCT VE
cc
o
300
o
CR201 SERIES
100
TO DETERMINE INSTANTANEOUS FORWARD
- VOLTAGE MULTIPLY VOLTAGE SCALE
0 \\.
BY THE FOLLOWING FACTORS
11II
AMBIENT TEMPERATURE— *C
92CS-11704T
z,
ei
,
op
.e„
,,,
,
i
e 4
,
,,ii
,,
"
3
z 4 6810 2 4 6 800
/,,
,
SURGE- CURRENT DURATION — CYCLES
W2CS-8706Te
,
2
O J
„
,....„, RATING CHART mr
GS 07 09 II 13 15 17 19 CR201 SERIES
INSTANTANEOUS FORWARD VOLTS
92CM - 11707T
100
-75 -50 -25 O 25 50 75 100 125
AMB ENT TEMPERATURE - "C
,ZCS-It70171
320 RCA Transistor Manua•
SILICON RECTIFIERS
Hermetically sealed fin-mounted
CR301 types used in power-supply appli-
cations at peak reverse voltages up
SERIES to 9600 volts. These types consist
of series-connected silicon rectifier
cells shunted by a voltage-equaliz-
ing network. The integral resistance-capacitance network equalizes the re-
verse voltages across the rectifier cells under both steady-state and transient
conditions. These types are designed to meet stringent environmental and
mechanical specifications. For instantaneous forward voltage drop for these
types, see Instantaneous Forward Characteristics Curve. Outline 47, Outlines
Section.
Common Parameters
wi 500 i
e
ni e
taa l
I
III
va 400
,s. "....C,p l I
1
'u
ii,
14
.
e 300
a I"
_...„u....0 ,.'b.- ..........
i b9.
ee.ye. --- /
a-
-,
200
-_,-, / to
20
100
/ /
.e:
4 6 62 4 O 04 06 08 1.2 1.4 1.6
SURGE-CURRENT DURATION —CYCLES INSTANTANEOUS FORWARD VOLTS
92C5-12360T 92CS-12561V
322 RCA Transistor Manual
TERMINAL-CONNECTION DIAGRAMS
FOR DISCONTINUED TRANSISTORS
E 8 IS
E 8
CHARACTER-
MAXIMUM RATINGS ISTICS Maximum
Operating
Tei mixai- Tempera-
RCA Coi rection Out- Veil PER 10 PT Min. l
c. ture Can be replaced
Type Diagram* line (volts) (volts) (amperes) (watts) II ,E (sin) (
CO) by RCA type
TUNNEL DIODES
Electrical Characteristics
(at 25 -C Ambient Temperature)
Min Max
Peak Max Pee-to- Min Ma.: S,ries
Forward Valley Valley- Peak Valley Forward Capad- Resis- Rise Tim
RCA Current Current Current Voltage Voltage Voltage tance* tance (psec)
Type (ma) (ma) Ratio (me) (my) (my) (pf) (ohms) max. typ.
TUNNEL DIODES
Maximum Ratings
(at 25°C Ambient Temperature)
Arbient-
DC Current Temperature (°C) Lead
(ma) Dissipation t Range Temperature ( °C) Out- RCA
Forward Reverse (mw) Operating Storage (3 seconds maximum) Material line Type
TUNNEL RECTIFIERS
Electrical Characteristics
(at 25°C Ambient Temperature)
Min Forward Max Reverse Max Reverse Max
Peak Voltage Voltage Voltage Cana-
RCA Out- Current at 1 ma at 10 ma at 30 ma citance
Type Material line (ma) (mv) (mv) (mv) (11f)
TUNNEL RECTIFIERS
Lead
DC Current Ambient-Temperature 1°C) Temperature
(ma) Dissipation Range (3 seconds RCA
Forward Reverse (mw) Cperating and Storage maximum) Type
Ambient-Temperature 1 °C)
Dissipation t Range RCA
(watts) Operating and Storage Type
VARACTOR DIODES
(V1000 to V7000 Series)
Cutoff
Frequency"' Junction Capacitancet—pf
(Cc)
Min TYP 0.2-0.8 8.4-1.2 0.4-1.1 8.2-8.4 0.4-0.8 0.8-1.2 0.8-1.1
(vit = --6v) (v. = —30v)
Cutoff
Frequency** Junction Capacitancet—pf
(Cc)
Min TYll
(Vu = —6v) (Vu = —45v) 0.2-0.8 0.4-1.2 0.4-1.1 0.2-0.4 0.4-0.8 0.8-1.2 0.8-1.1
(1 -^ where C. is the capacitance at zero bias, V is the bias voltage, ‘.5 is ap-
proximately 1volt, and n is typically 0.35.
330 RCA Transistor Manual
1
•• Cutoff frequency = 2 Ci where R. is the series resistance at reverse volts =
ir R.
—6 at 2 gigacycles and Ci is the junction capacitance at the same voltage.
125-VOLT TYPES**
150-VOLT TYPES**
175-VOLT TYPES**
30 V6200 V6201 V6202 V6203 — V6204
50 V6210 — V6211 V6212 V6213 — V6214
70 V6220 — V6221 V6222 V6223 — V6224
200-VOLT TYPES**
30 V6300 V6301 V6302 V6303 — V6304
50 V6310 V6311 V6312 V6313 — V6314
70 V6320 V6321 V6322 V6323 — V6324
20 125 — — V5000
20 150 — 1/5100
20 175 V5200 —
20 200 V5300
= C. (1 ---11-) -n where Co is the capacitance at zero bias. V is the bias voltage, <0 is
0)
approximately 0.6 volt, and n is typically 0.4.
Outlines
Dimensions in inches
r
44
.1
r
4 7
Drit• .424 MA
C/A.
1
1 25
0
.280
.245 DIA
.725
MAX:
.075 MAX.
Z DIA.—.ft.--
.1300
MAX.
.405
MAX.
.453
.422
MAX.
DIA. 10-32 UNF-2A
.400 THREAD
.360 1/4-26 UNE -2A THREAD
DIA.
.675D MAX.
.450 TO-3
.250
P,
1
.3. MIN.
11 .T35 MAX.
.5
.009 Mtbl.
1.197 '
125 j1 0--A
Ltuis,-
1
1.177.675
3
1.5
mill-3 LEADS
:
44°
4 20 1
47.655
J613 R. MAX.
21Z '
De
BOTH ENDS
DLA'
Weir
t
--
.007 MAX.
JOD
200
332
Outlines 333
.360 MAX.
DM.
.375
MAX TO-8 .115
.270 .260
.200
1.5 tf
.440 1.5
B.‘
.080 MAX.
:8D
LA
D'
A. .360
1-__O 3 LEADS-.J g
LEADS
.146 .016 IXA*
C»6 DIA..136
L."
..146
.136
.055 -
.041 ->
-6. 499
.185
.335 .--1113
) 9
:
fl
.305
DIA 'F
.260 .210
.240 ±.7i7
T-
.125 .500 .030 MAX.
.009 .500
MIN. MIN.
.125 ji 11 [1.-3 LEADS
.009 1.5 MIN.
8 4 LEADS
:82 MA.
.210 21 ()IA.
TAB
INDEX -1 DM. 1.3-LEADS
J90
' 019
016 •••"•• .100
.100
.045 - .100
.029
029 tAN.
i.33
055De.
.520
.260
.240 TO-40
1 - .500 .312 MAX.
.710.375
.125 .610
INSULATED
.00 00 hil " INDEX PIN
.140 MAX. DIA.
.r2c.
MAX.
Fi
4 LEADS 200 l 10-32 NF-2A THREAD
DIA
.019 DIA. F.-J90 MAX.
.016
INDEX TAB
260 MAX
100 2"
), DIA.
DIA. 3 PINS
22 DIA.
.04
.02;
OUTSIDE CORNER
RADII .007 MAX.
.:240 MAX.
DIA.
405 .375
TO 45
MAX. MAX.
3 LEADS
.500 .019
.012 -^*
"L[1[1[1
4 PINS
.202 II :81Z
.172 II MA '
"1.1
N.
5 4
0 1_9EAD
AS
:°16 *
- 17 E n5D
INDEX TAB
4ç5 \
CENTER
LEAD
.046
.036
.562 .544
.544 MAX. DIA.
:
31e, DIX.h-
.405
.300 MAX,
.165 -.150 .115
.210
.125
SEATING_
DIA. HOLE
f PLANE
.140
.115 .14
51?2. .030 MAX.
.120 MIN.
.075
.060 LEADS
14
DIA. HOLE
1
.100 -
GLASS
SEATING .0464> INSULATION
PLANE .036 .048
.453 .028
.422
1/4-28 UNF-
2A THREAD
CATHODE
TERMINAL 1
..556g
1 50
rh
r
:751 DIA.
POL AR1 TY .390
SYMBOL .330
1— 2 PINS — r
405 .475
.425 .8g9 eA•
.
PIN 1195
INSULATING 1.80
EYELETS .675
.655
.225
ANODE .205
TER/ANAL
L015
.118 2 HOLES
.990
.24Q ... •
182 DIA.
MAX. tub .
GLASS1
INSULATION-
439 D ,
A -
.135 2 LEADS
.O36 -
—22- —23 —
79°D11"X
.440 MAX.
, MAX.
2 PINS
n23
: „A.
L5
MIN.
i 0J0
2__„.! PIN-
INSULATING
EYELETS 1:1\ -3 LEADS
2111/1 °*A.
L031
.969 440
.420
-
MKUN
ATil
r
i
EMITTER .'
uo,Esj
L--
2 (COLLECTOR)
DIA.
L562
1.500
—24 — —25 —
336 RCA Transistor Manual
768D I
A
,AA X. -1:24, DIA.
.12X
125 ±..010
.88
MAX. .20
5e,g .48
MAX.
2 PINS
.040 *.002
-f .100
DIA.
.500 Ii MAX,
0
0[1- 112- EADC'
F050sLOLOI
INSULATING---
EYELETS
- .100
.046
.036 .048
.0213
—26 — —27 —
*--.455 MAX.
I.-420 MAX.-1
410
i
I
POLARITY
SYMBOL
PEDESTAL
'6,5
4 1MAX. 14-•
..MOUNTING STUD
- 6-32NC-2A THO .50
3 LEADS
.017 ::
88; DIA. .50
LEAD
J05 MAX. INSULATING
818611610116--IRCUES
EYELETS TOPE
.085 MAX.-.i A
.105
CRIO1 24/8 41/8 2-1/8
C0102 2-3/6 I-I/8 2-1/8
CRIOS 2-3/6 41/0 2-1/8
CRIO4 3-1/4 1-3;4 3
.230 CRIOS 3-i/4 I-3/0 3
MAX
DIA.
MAX. 05101
CR.01
4-1/2
4 -./2
3-1/s
3-.74
0-1/4
4-1/4
OPIOS 4-1/2 3- 1/8 4-1/4
CR.09 5-1/2 4 S-1/4
CIIII0 5-1/2 I e 3-1J11
gee.
—28 — —29 —
—30 —
Outlines 33T
.370 MAX.
id- .335 Tem. - .
DIA
ig
J .335 MAX.
1
4- *DIA. .305 MIN.
.230 WA.
.209
DIA. .100
MIN.
.210 ..gg
, .170
-t SEATING PLANE
SEATING PLAN
.5.0
.030 MAX.
.5
o
4 LEADS
.L_
IN1
DETAILS °POUT* MIN.
.017 +032 0A. LINE IN THIS
-.001
ZONE OPTIONAL
.200 3 LEADS
.019 MAX.
.016 MIN.
PIA.
LEAD
INSULATING
050 EYELETS
.100
OUTSIDE --t.
45* CORNER
RADII N 45.
INDEX ,
TAB 4./Né a .100 DIA. .007 MAX.
.034 MAX.
.036 .028 MIN.
r .045 MAX_
MIN.
INDEX TAB-
-31 - -32 -
.340 .410
250 1
_1 SEATING PLANg MAX.
RED DOT INDICATES
COLLECTOR
.360 MIN. 11 t--.100 MAX..
1.5'%
.L._un n
u
MIN.
4 LEADS
.019 r• a_
.06
.145R: MAX.
BOTH ENDS
se
2 MOUNTING HOLES
.210 ..152 IAA. .100 DIA.
eto 142
R. MAX. 45*
DATUM LINE
2 PINS
.034 D,1'. INDENT BETWEEN
.02111 8 SHIELD AND EMITTER Lead No.4.1.3 Mire.
-33 - -34-
338 RCA Transistor Manual
.340
.320
DIA. .130-.115
.205 TOTAL WIDTH
.195 a
ALIGNMENT
TOLE ANGE
10955
.
.270-.230
440
.420 CERAMIC
CYLINDER
.9°
f
- .055
.035
CERAMIC
3 PINS
.045 D ,
.035 1
POLARITY
095-.0%1
DIA.
.295
.245 J30-.115
,t35 TOTAL aWIDTH
.115
ASSIGNMENT
TOLERANCE
10-32 Ian 22
THREAD
.270 .230
CERAMIC .020
CYLINDER _9310
T.075
.055
-35 -
DIA.
POLARITY
SYMBOL (SEE NOTE)
.140-.120
TOTAL WIDTH
5
ALIGNMENT -37-
TOLERANCE
.065
.060 R.
t /05 -.001 7
POLARITY
.710_94 - .
DIA.
011%1
SYMBOL (SEE NOTE) hotel Arrow shows the direction of forward current
Norl os indicated by dc ammeter.
-38- -39 -
Outlines 339
.25
.87
MAX.
3I DIA.
.
,10°1 .
2 2.25
.50
.25
3/8-24 NF-2
THREAD .6î
-40 -
▪ ANODE
062 TERMINAL
±.003
ANODE TERMINAL.
1
.059
.±. 007
.0 ,
3
CATHODE TERMINAL
▪ CATHODE
±0033
.
.gÓ2 TERMINAL
.062 ±.003
DIA.
088+.004-/
.088±.004 DIA.
DIA.
-41- 42 -
340 RCA Transistor Manual
.020 R
L
.185 ANODe
TERMINAL
.335
.107
.033 CERAMIC
CATHODE
TERMINAL.
.093.001
A.
-43 - -44 -
r705
1 .510 MAX.
MIT —I_
.002 / .200
r L
71:1_Le_ti—s MAX.
t 015
e- 1.--.690 .12$
.615
DIA.
-46 -
Outlines 341
4 MOUNTING
HOLES
.2 DIAL
Nr- E- 4
H
CATHODE
ANODE TERMINAL
TERMINAL
THREAD
I Te
e? 10-32
AD
1 -.IG
. LJT
-47-
DIMENSIONS—INCHES
RCA types A B C D E
LIST OF CIRCUITS
Page
342
Circuits 343
1/ /— 7
2TNYI6P3E7 L3 /7—
TYPE TYPE
2NI639 2NI638
C9
)1
R26
C23
"TYPE
2N2869/ 24
2N301
o
SPEAKER
— 7
T2
C25=
14.4 VO
TYPE
2N2869/
2N301
R25
SPEAKER
O
Rzo
ANT
29' FM TUNER
71
1E22_
,
RF
Ap,ip TYPE
2N11
77
AOTOOYNE
CONV. ge9
(,) AFC
S1 +12 V
AM
e AM ACC
Fi re C55
R23 R25§
-e
13+ AFC 3 C58
AM AGC
C59 1;
349
SPARK
PLATE
8iir i
P
FPLT
DETECTOR c74:1 Z C75KATE
111
C = 18 pf, ceramic disc. C71 = 200 iii, electrolytic, Re Rn R41 = 180 ohms, 0.5
50 v. 25 v. watt
C = 5-80 pf, mica. trimmer C72 = 100 µf. electrolytic. R7 = 68 ohms, 0.5 watt
C8 Co C19 C47 = 5pf, ceramic 25 v. R8 = 220 ohms. 0.5 watt
disc, 50 v. C74 = 500 µf. electrolytic, Ro = 680 ohms, 0.5 watt
C. Cr7 Coe = 6-21 pf, tuning 25 v. Rio = 4300 ohms. 0.5 watt
capacitor Coo C76 = spark plate • = 1 megohm, 0.5 watt
C6 C18 C31 = 1-6 pf, mica, CRi CR. CR. CR. = diode, Rio Rio, = 10000 ohms,
trimmer 1N295 0.5 watt
Co = 1.5 pf. ceramic disc. CR. = AFC diode, 1N3182 R17 R211 = 1500 ohms, 0.5 watt
50 v. or equiv. Rae Rue = 2200 ohms, 0.5 watt
Co Go Co C4e C613 Coo C73 = CR. CR. = diode, 1N542 Rio Rue = 5600 ohms, 0.5 watt
0.05, pf, ceramic disc, 50 V. CR. = diode, 1N1763 Rso Roo = 18000 ohms,
Co Cii CI, Co Cs. Coo = 0.002 Li = 6.2 ph, radio-frequency 0.5 watt
feedthrough. 50 V. choke R21 Flo Rae = 470 ohms,
• = 55-300 pf, mica, L. = antenna coil for FM 0.5 watt
trimmer tuner; 4 turns No. 16 HF R29 = 3900 ohms, 0.5 watt
Cl. = 390 pf. ceramic disc, on 0.220-inch form, spaced R30 = 1000 ohms, 0.5 watt
50 v. fri,-inch (approx.) ;tapped Ru Roo RS7 = 6800 ohms,
C16 = 0.005 a, ceramic disc, at 1 turn; core "J" ma- 0.5 watt
50 v. terial Arnold A1-336 or 144 = potentiometer, 100000
C18 Cza = 4 pf, ceramic disc, equiv. ohms. 0.5 watt, audio taper
50 v. La = antenna coil for AM Rao = 62000 ohms, 0.5 watt
Co = 330 pf, ceramic disc, tuner; variable inductor; R843 = 4700 ohms, 0.5 watt
50 v. tunes with 120 pf over R38 = 3300 ohms. 0.5 watt
Co = 2.2 pf, ceramic disc. the frequency range from R40 = potentiometer, 250000
50 v. 535 to 1610 kc; Q0 = 60 ohms, 0.5 watt, audio taper
Cue CS9 C84 C87 C51 COO C68 at 1610 kc; secondary 8 R42 = 270 ohms, 1watt
Coi = 0.01 pf, ceramic turns R48 = 0.47 ohm. 0.5 watt
disc, 50 v. L4 = rf coil for AM tuner; ▪ = FM if transformer;
Coo Can = part of Ti variable inductor; tunes Thompson -Ramo -Wool-
Cu = 15 pf, ceramic disc. with 560 pf over the fre- dridge No. 12224 or Gen-
50 v. quency range from 535 to eral Instrument No.
Cl. Coi = 3.3 pf, ceramic 1610 kc; Q. = 60 at 1610 E2741353AX or equiv.
disc, 50 v. kc; no secondary Ti To = FM if transformer;
C36 = 180 of, N750 ceramic Lo = rf coil for FM tuner; Thompson -Ramo -Wool-
Cao = 80-550 pf, mica, same as 1.2 except has no dridge No. 12080R1 or
trimmer tap General Instrument No.
Cae Cii = part of T. Le = miniature radio-fre- E2741166BX or equiv.
C31) C. C42 = part of Ti quency choke, 1 ith (ap- Ta = AM if transformer;
C13 Cu = 0.001 id, ceramic prox.) Thompson -Ramo -Wool-
disc. 50 v. L. = oscillator coil for FM dridge No. 12414 or equiv.
Cii = 10 rd, electrolytic, tuner; 3 turns No. 16 HF T6 = AM if transformer;
25 v. on 0.220-inch form. spaced Thompson -Ramo -Wool-
C48 C62 = part of To I/4-inch (approx.): core dridge No. 12415 or equiv.
CIO = 1800 pf -.± 10%, "J" material Arnold Al- Te = radio-detector trans-
ceramic disc 336 or equiv. former; Thompson-Ramo-
Coo Caao = part of T. Wooldridge No. 12007R1
C66 = 2 pf, ceramic disc, Le = oscillator coil for AM
tuner: variable inductor; or General Instrument
50 v. No. E2741166AB or equiv.
Cur C.. = part of Te tunes with 470 pf over the
frequency range from 797 Ti = AM if transformer;
Csq = 200 pf. ceramic disc. Thompson -Ramo -Wool-
50 v. to 1872 kc; Qo = 45 at
1872 kc: secondary 30 dridge No. 12416 or equiv.
CGO = 20 pf. electrolytic. TB = driver transformer;
25 v. turns
primary 8000 ohms at 3ma
Coi = 1500 pf ± 10%, Le = filter choke, 125 Ph dc; secondary 60 ohms;
ceramic disc (approx.) Columbus Process Co. No.
Cos = 0.02 si, ceramic disc, Ro Ron Rwr = 100000 ohms, X5357 or equiv.
50 v. 0.5 watt T. = output transformer;
Coo = part of T. Ra R4 = 560 ohms, 0.5 watt primary 20 ohms at 700
Ce7 = 10 lit electrolytic, 3v. R. = 390 ohms, 0.5 watt ma de; secondary 4 ohms;
Coo = 2.2 ;if, ceramic disc. R6 Rio Rio = 33000 ohms, Columbus Process Co. No.
3 v. 0.5 watt 5383 or equiv.
350 RCA Transistor Manual
Cie
C20
C23
L9
C21
C24
L10
3b
TYPE
2N270
14
TYPE TYPE
2N408 SP
2NI524
TYPE
2N270
CR2
R17
C36i
- --r
+
37R
R2I
?2
Circuits 351
TYPE 2N640
2N1637
CT
R9
0+614
IF AGC
RF AGC
R5
Ci = 3-50 pf. variable Cs = 680 pf, mica 1610 kc; Q = 65 at 1610 kc.
Ci = 0.01 ¡if, ceramic disc. Li L2 = antenna coils, vari- RI R4 R5 = 330 ohms, 0.5
25 v. able inductors tuned with watt
Ca = 30-200 pf, variable 110 pf; frequency range R2 = 82000 ohms. 0.5 watt
Ci = 1000 pf, mica
535 to 1610 kc; Q = 65 at R3 = 2200 ohms, 0.5 watt
C5Co = 0.05 µf, ceramic
disc. 25 v. 1610 k, 60 to 65 at 535 kc Re = 6800 ohms, 0.5 watt
C7 = 120-450 pf, variable La = e coil; variable induc- R7 = 10000 ohms, 0.5 watt
Co = 0.004 µf, ceramic disc. tor tuned with 1000 pf; R8 = 1500 ohms, 0.5 watt
25 v. frequency range 535 to Rs =. 1000 ohms, 0.5 watt
352 RCA Transistor Manual
FM SI -E
3
i
NPUT SI-
A
o
JI
• ni\A.A.f
R9
'
TAPE
DEC K
C4
¡ RI,
CG RIZ CT
4-
o ley
C8 R16 R21
C9 R R19 C12 C13
PI4 - - 4.
R23
Clo
TYPE
2N ,I0 81-
'TYPE
RI? 2N40 OUTPU T
(i
)
C, = 25 uf, miniature elec- Ra = 100 ohms ± 10%, Rio = 2700 ohms ± 10%,
trolytic, 3 v. 0.5 watt 0.5 watt
C2 = 50 uf, miniature elec- Ra = 0.18 megohms -1- 10%, R17 = 180 ohms -1- 10%,
trolytic, 3 v. 0.5 watt 0.5 watt
Co = 50 uf, miniature elec- R. = 330 ohms 2- -10%, Ris = base control poten-
trolytic, 15 V. 0.5 watt tiometer (linear taper),
C4 = 270 pf, ceramic. 600 v. R7 = 1800 ohms ± 10%, 50000 ohms, 0.5 watt
Cao = 0.05 uf, ceramic, 0.5 watt RIP = 2700 ohms - 1- 10%,
50 V. 0.5 watt
Rs, Rn = 27000 ohms :1- - 10%,
Rn = 3300 ohms ± 10%,
C. = 0.2 uf, ceramic, 25 v. 0.5 watt 0.5 watt
C7 = 0.06 µf, ceramic, 50 V. R22 = treble control poten-
RP= 1000 ohms -1- 10%,
Ci = 4uf. miniature electro- tiometer (audio taper),
0.5 watt
lytic, 3 V. 0.1 megohm, 0.5 watt
Ca, C13 = 2 uf, miniature Rio = 1500 ohms ±- 10%,
0.5 watt Si = 2-pole, 3-position
electrolytic, 12 v. rotary switch
Cio = 0.15 uf, ceramic, 50 v. Rn = 820 ohms ± 10%, •If a two-channel sys-
CI, = 0.12 uf, ceramic, 50 v. 0.5 watt tem is used, Ria,
Cao = 10 uf. miniature elec- 1112, R20 = 0.1 megohm and R22 should be dual
trolytic, 12 V. 10%, 0.5 watt controls, one control sec-
CI, = 0.003 uf, mica, 500 v. = volume control poten- tion for each preamplifier,
RI= 1 megohm ± 10%, tiometer (audio taper), and Si should be a 4-pole
switch (Centralab No. PA
0.5 watt 10000 ohms, 0.5 watt
1012, or equiv.), two poles
R2 = 15000 ohms ± 10%, R14 = 56000 ohms - 1-. 10%, per channel. All other
0.5 watt 0.5 watt components are dupli-
R2 = 47000 ohms ± 10%, Ras = 6800 ohms zt. 10%, cated in the second pre-
0.5 watt 0.5 watt amplifier.
Circuits 353
C3
0 20V
§RIO
TYPE
2N591
O
INPUT
FROM
PREAMP
OUTPUT
•+C1)11-0
TYPES
IN 2326
R4 R11
TYPE —Ca
1N2858
C2
TYPE Lra
TYPE
2N109 2N109
TO SPE
.4)._
AKER
-- VOICE COIL
9 •
o
- vcc *
..38 VOLTS
50 MA
TYPE
1N2326
C3
Performance Specifications:
Sensitivity = 0.35 volt mis for 25 watts output
Frequency response = 20 to 20,000 cps -± 1db
Input resistance .= 180 ohms
c, 5
+Ci
R6 .17
L
.3
,
CR Cl2
O R15
INPUT )1
TYPE
2NI524
CI6
R3 R4
R21
R19 R20
TYPE RIGHT
R2 6 2N408
C20
0 12 V
C28
LEFT
C2 5
C23
CI C20 C2I = 10 4f, electro- Cri = 100 Af, electrolytic, R. Ra0 Ft = 5600 ohms,
lytic, 3 V. 12 v. 0.5 watt
C. = 100 tif, electrolytic, 3 v. CR1 CR2 CR ,= 1N295 R.= 68000 ohms, 0.5 watt
C. = 390 pf, mica LIL. Li) = 38-kc trap, vari- R IO R32 R33 = 1000 ohms,
C.C5=. 1000 pf. ceramic disc able inductor, General In- 0.5 watt
COCI4 CI, = 0.05 id, ceramic strument No. E2741173BX, R ., _= 1200 ohms. 0.5 watt
disc or equivalent R i. Ra. R2O = 47000 ohms,
C7 -= 1 eif, ceramic disc, 3 v. L. L. = 19-kc trap, vari- 0.5 watt
C. CO = 1500 pf, mica able inductor, General In- R i2 = potentiometer, 10000
CIO C13 = 390 pf, ceramic disc strument No. E2741173AX, ohms, separation control
C., = 0.75 id, mica or equivalent RI4 = 1800 ohms, 0.5 watt
Cl2 = 5 pf, mica L4 = 100 mh R ,2 = 43000 ohms, 0.5 watt
L. = 10 mh R I7 = 560 ohms, 0.5 watt
= 0.47 id, mica
La Li = 25 mh R21) = potentiometer, 500
CI. = 2200 pf. ceramic disc
= 24000 ohms, 0.5 watt ohms, sideband-level con-
=- 820 pf, mica R.RI, = 3900 ohms, 0.5 watt trol
= 50 uf, electrolytic, R. R IR15 R IO R2, R22 R32 R33 R34 1120 = 75000 ohms.
3 V. 1147 = 4700 ohms, 0.5 watt
: 0.5 watt
C, C,. = 0.01 bf, mica Rs = 330 ohms, 0.5 watt' Rs. R2; = 2200 ohms,
= 10 pf, electrolytic, R. = 1500 ohms, 0.5 watt 0 5 watt
12 v. R; = 10000 ohms, 0.5 watt Ra 47 ohms, 0.5 watt
356 RCA Transistor Manual
R53
TO
SPEAKER
R29 --VOICE
COIL
C21
TYPE
2N2869/
"Re 2N301
TYPE
CERAMIC TYPE TYPE 2N408
PHONOGRAPH 2N408 2N408 R35
INPUT R4
o
o R5
CERAMIC
PHONOGRAPH TYPE TYPE
INPUT TYPER39
2N408 2N408 2N408
TYPE
2N2869/
2N3O1
I> TO
SPEAKER
C4 R. VOICE
I. COIL
C.C.CSC4= 0.02 pi, mini- C2o = 1000 uf, electrolytic, Ra Ra = bass-control dual
ature, 100 v. 25 v. potentiometer, 5000 ohms
CG Co Cr, C.. -= 0.1 pf, mini- Citi CR. -= 1N2859 Ra R., = 2200 ohms, 0.5 watt
ature, 100 V. F — Fuse, ampere, "slo- • 1131 = 1800 ohms, 0.5 watt
Ctl CT= 0.5 µf, miniature, blo" • Ru. = 6800 ohms, 0.5 watt
100 v. RIR. = 3300 ohms, 0.5 watt 12,r, R, = 470 ohms, 0.5 watt
R IIt, = 220000 ohrns, 1137 R.. = 820000 ohms,
C.CIO = 6 µf, electrolytic, 0.5 watt
6 v. 0.5 watt
R, R. = 10000 ohms, 0.5 watt Ru, Ruu = 51 ohms, 0.5 watt
CH = 10 µf, electrolytic R7 Itu = 1200 ohms, 0.5 watt
6 V. R. = 31,0 ohms, 0.5 watt
= treble-control dual • R,u = 220 ohms, 1 watt
Cu -= 0.001 p.f, miniature, potentiometer, 3000 ohms
100 V. R,, = 68 ohms, 0.5 watt
R11 RI4 = 2200 ohms, 0.5 watt
= 56000 ohms, Ru R47 = 0.27 ohm, 0.5 watt
Qr. CII1 CIA CIO = 1 uf, mini-
0.5 watt R. = 7 ohms, 10 watts
ature. 100 V.
RI. Rlfl = 1500 ohms, Ti T. = output transformer,
Cr, = 1000 µf, electrolytic, 25 ohms to 4 ohms at 400
10 V. 0.5 watt
RI7 =- balance potentiometer, cps; Mid-West Coil and
Cr. Cr. 2.2 /if, ceramic Transformer 20A124 or
2500 ohms
disc, 3 V. equiv.
Cr, Cat = 100 e, electrolytic,
Rue R. = 180 ohms, 0.5 watt
Re R22 = loudness-control T. = power transformer,
3 V. dual potentiometer, 10000 117 v. to 48 v., center-
-= 12 pf, ceramic disc, ohms tapped down 3000 tapped (24 v. per wind-
1000 v. ohms ing); Mid-West Coil and
Q u,= 1000 µf, electrolytic. Ra Re Re Re = 330 ohms, Transformer 20P21 or
15 V. 0.5 watt equivalent.
Circuits 357
11-14 HIGH -
QUALITY STEREO AMPLIFIER
RH
R7
R30
R9 C5
•«AA-I
FM-A TYPE
0-0 SI 2N2614 RI? 8OHMS
R24
PH-A
1 TYPE TYPE CHASSIS
2N2613 R29 40051
01 R3
R47
R25
TYPE
C4 2N59I Rae
TYPE I T2
2N2614 I TYPE
40051
C2 R4
TYPE
252613
PH-Bi
0-4 I F2 RL.13 OHMS
Sa R2 R6
FM-B R9 CHAIS
C20
C
6
Re R28 R33
-15 V -16 V -P
2V
CI, C2 = 180 pf, ceramic Ri, R. = 0.22 megohm. Re = balance control, po-
C4, Cr., Ce = 1800 pf, 0.5 watt tentiometer, 5000 ohms,
ceramic RII, R12 = 4700 ohms, 0.5 watt, S taper
C2, C2 = 2 µf, electrolytic, 0.5 watt R13 = 0.12 megohm,
10 V. RI4 = loudness control, 0.5 watt
Co, C,o, CII, C12, CID, C20 = dual potentiometers, 25000 R3I, Rio = 1500 ohms,
5 cf, electrolytic, 3 v. ohms, 0.5 watt, lineas 0.5 watt
Cl3, Ci, =. 5 µf, electrolytic, taper Rel, R35 = 12000 ohms,
3 v. = 27000 ohms, 0.5 watt
Cis, C,2 = 0.5 cf. ceramic 0.5 watt R30, R = 15000 ohms,
Cie, CI7 = 4 eif, mylar R17, Rio = 33000 ohms. 0.5 watt
Coi, Co.= 47 pf, ceramic 0.5 watt Rm. R10, 1143, R45 = 5600
C2-2, Ca = 50 sf, electrolytic, RID, R20 = 1000 ohms, ohms, 1 watt
3 v. R09, R4, = 3.9 ohms, 0.5 watt
0.5 watt Ra,. R-17, R4N, Ra = 0.27 ohm,
F1, F2 = fuse, 3 amperes Ri,, Ra, = 10000 ohms,
RI, R2, Ri. Rio = 1 megohm, 0.5 watt
0.5 watt = selector switch,
0.5 watt
R. = treble control, dual R23, Ri, = 270 ohms, double-pole, double-
0.5 watt throw
potentiometers, 3 meg-
R24, R27 = bass control, dual Ti. T2 = driver transform-
ohms, 0.5 watt, audio ers, Columbus Process
taper potentiometers, 5000 ohms, No. X7602, Better Coil
Ra. Re = 0.1 megohm, 0.5 watt, audio taper and Transformer No.
0.5 watt Re, R39 = 39 °tuns, 0.5 watt 99A4. or equivalent
358 RCA Transistor Manual
600 Volts; 300 Volts; Total Current 330 Milliamperes (Intermittent Duty)
0 + HV
Approx.
600 V
Rio
Ril
Approx.
300 V
II7 V R12
60 ,-v
GREEN
C.n C. = 0.001 µf, ceramic • = 9 turns No. 24 enarn. R., = 27 ohms, 0.5 watt
disc close-wound on 1/ 4 -inch S = receive-transmit switch,
Cs C3 = 27 pf, mica form, ferrite slug six-pole two-position
C, = 0.02 uf, ceramic disc R. = 22000 ohms, 0.5 watt Sp -= speaker, 14-ohm voice
Cs -= 3-35 pf, trimmer R2 = 2200 ohms, 0.5 watt coil
Ci = 10 uf, electrolytic, 3 v. • = 240 ohms, 0.5 watt T. = transformer; primary
C. = 30 uf, electrolytic, R. = regeneration-control 10000 ohms; secondary
3 v. potentiometer, 1000 ohms 1000 ohms, center-tapped
Cn = 0.2 uf, ceramic disc Ro = volume-control poten- (one-half secondary used)
tiometer, 5000 ohms T, = transformer; primary
C.2 = 200 uf, electrolytic,
• =- 6800 ohms, 0.5 watt 20000 ohms; secondary
10 V.
Ri = 56000 ohms, 0.5 watt 800 ohms, center-tapped
CR = crystal, 27.12 Mc • = 1000 ohms, 0.5 watt
(series resonant mode) (one-half secondary used)
• = 10000 ohms, 0.5 watt = transformer; primary
= 25 uh, radio-frequency R.0 = 560 ohms, 0.5 watt 650 ohms, center-tapped.;
choke R,, =- 15 ohms, 0.5 watt secondary 16 ohms
360 RCA Transistor Manual
TYPE
40080 40081
IC TYPE
40082
I(
CII
L3
27M
XTAL
C.2 1 ouTPUT
1' (50 OHMS)
*TYPE TYPE
2N59. 2N591
69
C14:
+ 1 Ci o C22,,
*11E0 I5V
OUTPUT
O (LOAD .
15iy.f )
I
NPUT
(SOURCE .
5000
OHMS )
OUTPUT
TYPE (LOAD .
2NI 493 50 OHMS)
INPUT
(SOURCE.
50 OHMS)
—I5V 50V
C20 TO
C9 L6 30IFM
TYPE AMPL
2N2867
460 Mc
INPUT
C2I
+ -
8V 8V
480 Mc--44.
LOCAL OSCILLATOR
=_.
=. TYPE '
1e
, T YP E
2N2708 2N2708
000
C26
Rio
Ria
C33 C36—
.1.
CI, Co, C12. C IA = 50 pf, C21 = 470 pf, ceramic disc equiv.
ceramic disc = trimmer, 3 to 12 pf, Cft2 = 0.001 cf, ceramic disc
C2, Cg, C15, Cog = trimmer; tubular ceramic L I, 1.0 = silver-plated bar
0.8 to 8 pf; JFD type Czo = 0.001 cf, ceramic stock; length, 2.8 inches;
VC20G, or equiv. feedthrough diameter, V4 inch
C4. Co, C14 = trimmer; 0.3 Coi, Coo, C30 = trimmer; 1 Lo = one-half turn of No.
to 5 pf; tubular ceramic to 12 pf; JFD type 57G, 16 solid copper wire, lo-
Co, Co, Cm, Cu, C11 = 500 pf, or equiv. cated Va inch from and
ceramic
feedthrough = 24 pf, ceramic disc parallel to L4
= 1000 pf,
C T. C12, C1/1 Ciii = trimmer; 2 to 25 pf; L4, Le = silver-plated bar
ceramic feedthrough JFD type VC24GY, or stock; length, 3 inches;
Ci = 75 pf, ceramic disc equiv. diameter, ¼ inch
C., Cog. Ce, Gis = 0.005 iii, Coi =- trimmer; 1 to 4 pf; L5, Ls, L9 = 0.22 ch; rf
ceramic disc JFD type VC21G, or choke; J. W. Miller Type
9320 -02, or equiv.
TO
DETEGTOg
L4
C1, C3, Cis C7. CS= 0.05 pf, Cii = trimmer, 2 to 25 pf; LS, L,= 2 µh, rf coil
ceramic disc JFD type VC24GY, or La = 10 ph, rf choke
CS = trimmer, 0.8 to 8 pf, equiv. RI, R5 = 18000 ohms,
JFD type VC20G, or Li = 3 ph; tapped rf coil; 0.5 watt
equiv. ratio of number of turns Rip R6 = 7500 ohms,
CIS, CS= 2000 pf, ceramic in over-all coil to the 0.5 watt
feedthrough number in section be- RI, R7 = 1000 ohms.
Ce = trimmer, 6 to 8 pf, tween tap and ground, 0.5 watt
tubular ceramic 1.5 to 1 Rs = 110 ohms, 0.5 watt
Lai, Lai = 5 turns of No. L17 = silver-plated bar Rio = 4.7 ohms, 0.5 watt
22 wire, 0.25-inch inner stock; length, 2 inches; Ru = 51000 ohms, 0.5 watt
diameter, coupled on diameter 1 4 inch R12 = 510 ohms, 0.5 watt
same coil form Lis = silver-plate brass Ran = 15000 ohms, 0.5 watt
L1.2 = 1 µh, rf choke strip; length. 1 inch; R14 = 39000 ohms, 0.5 watt
Las = 1.1 ph, rf coil width, ',I inch; located Ti = rf transformer (30
L14 = 6 turns of No. 22 %a inch from and parallel MO: 9 ah; primary-to-
wire; length, lit Inch 'in- to L17 secondary turns ratio, 30
ner diameter, Yin inch Ri. R, = 6800 ohms, to 1; primary. 26 turns of
0.5 watt No. 22 wire wound on J.
Lis = 5 turns of No. 22
RS, Rs, Rs = 2700 ohms, W. Miller type 4500 coil
wire; length, lit inch; in-
0.5 watt form
ner diameter, V2 inch R3. Ro, R9 = 1000 ohms. XTAL = 120-Mc oscillator
L18 = 1 µh, rf choke 0.5 watt crystal
364 RCA Transistor rvianuai
56V'
CI
INPUT
OUTPUT TO
400 CPS
CONTROL PHASE
OF MOTOR
TYPE
CR1= 2N1491
Cs = 20 pf, ceramic disc, OUTPUT
25 v.
Cs Cs = 0.01 eif, ceramic (LOAD.
disc. 25 v. 50-100
Ca = 22 pf, ceramic disc, OHMS)
25 v.
CR = crystal, 27 Mc
La = 15 turns No. 22 enam.,
close-wound on CTC LS5 CI
form (powdered-iron
slug)
La = 2 turns No. 18 enam.,
wound over cold end of
Ls
= 9100 ohms. 0.5 watt
Rs = 680 ohms, 0.5 watt
113 = 200 ohms, 0.5 watt
+20V
7MA
OUTPUT
(LOAD.
50 OHMS)
-25MA
CONSTANT-CURRENT
SUPPLY
CONSTANT -CURREN T
SUPPLY
OUTPUT
450 V
100 MA
DC
CR = reference diode. 27 v.
= 28 ohms, 10 watts (in-
cludes source resistance INPUT OUTPUT
of transformers, rectifiers. 45 TO 55V 28V, 0 TO 0.5A
etc.) DC DC
= 50 ohms, 0.5 watt
o
INPUT
31 - 39V
DC
OUTPUT
26V, 15A
CR = reference diode, 7.5 v., ft• = 60 ohms, 4 watts Ria = 300 ohms, 1 watt
100 mw. R. = 75 ohms. 5 watts
R I= 225 ohms. 5 watts R7 = 2200 ohms, 0.5 watt
NOTE: 2N1485 and 2N2015
= 500 ohms, 2 watts
= 10000 ohms, 0.5 watt transistors must be mounted
RO= 120 ohms, 2 watts
R0 R = 0.075 ohm, 5 watts on heat sink of sufficient
-= 820 ohms, 1 watt
(cut to measure from re- Ru = potentiometer, 150 size to keep the case tem-
sistance wire) ohms, 0.5 watt peratures below 100°C.
368 RCA Transistor Manual
CR = reference diode, 27 V.
INPUT OUTPUT
R., -=- 28 ohms, 10 watts (in-
45 TO 55V 28V, 0 TO 0.5A
cludes source resistance
DC DC of transformers, rectifiers,
etc.)
1000 ohms, 0.5 watt
TYPE
TYPE
2NI479
+0 +'
C2
INPUT
40 —50V OUTPUT
DC 22-30V
0-10A.
DC
C, = 1 pf, paper, 25 V. =_ 1200 ohms, 0.5 watt R7 =- 270 ohms, 0.5 watt
= 100 id electrolytic, R2 R, R = 0.1 ohm, 0.5 watt Ft„ Rio = 1000 ohms, 0.5 watt
50 V. Fi.,, = 2000 ohms, 0.5 watt = potentiometer, 1000
CR .= reference diode, 12 v. R5 = 570 ohms, 0.5 watt ohms, 0.5 watt
Circuits 369
12v
1
Rep. Rate — 2(0.7R2C1)
C1 C2 = 0.01 etf, paper, 25 V.
RIR4 = 60 ohms, 5 watts
R2 Et2 = 1000 ohms, 0.5 watt
.T.-
PULSE
+ 6V —18 V +6 V
CIC3= 180 pf, mica, 24 V. D ID7 13:, D. D5 Da = diode, R. R. = 1200 ohms, 0.5 watt
C. Ci = 430 pf, mica, 24 v. 1N126 R. R. = 11000 ohms, 0.5 watt
RIR. = 5100 ohms, 0.5 watt Ra R. = 2700 ohms, 0.5 watt
Circuits 371
Ti TO SPARK PLUGS
H.V.
+6V DS
DISTRIBUTOR
POINTS
Ti TO SPARK PLUGS
H.V.
+I2V DS
DISTRIBUTOR
POINTS
77 -
37 VOLTAGE-SENSITIVE SWITCH
(USED WITH NORMALLY OPEN RELAY)
Relay energizes when voltage level exceeds a predetermined value
TO RELAY,.
CONTACTS"
VOLTAGE LEVEL
BEING DETECTED
(350 V MAX.)
Ki = dc relay; 12-volt, 71- 112 = 470 ohms -±- 10%; *Relay-contact connections
ohm coil; Potter-Brum- 0.5 watt may be arranged to provide
field Type PRI1DY, or Ra = desired detection-volt- the type of control func-
equivalent. age level x 800 ohms tions desired.
Ri = 150 ohms -±-; 10%;
0.5 watt
77 -
38 VOLTAGE-SENSITIVE SWITCH
(USED WITH NORMALLY CLOSED RELAY)
Relay de-energizes when voltage level exceeds a predetermined value
+24V
TO RELAY
CONTACTSI" VOLTAGE LEVEL
BEING DETECTED
(350 V MAX.)
K = dc relay; 12-volt, 71- IL = 150 ohms riz 10%, 0.5 *Relay-contact connections
ohm coil; Potter-Brum- watt may be arranged to provide
field Type PRIIDY, or Ra = 470 ohms -±- 10%, 0.5 the type of control lune-
equivalent watt tio.ns desired.
R I= 75 ohms .-± 10%, 10 Ri = desired detection-volt-
watts age level x 800 ohms
Circuits 373
o
Ei
E2
o
TYPE TYPE TYPE
2N404 2N404 2N404
(2N2869/ (2N2869/ (2N2869f
2N301) 2N301) 2N301)
TRIG
o
TYPE
2NI302 2NI302 2NI302
C4
2NI302
/Tl
Ct = 100 af, electrolytic, 6 v. No. 49; 2-volt, 60-ma (or 330 ohms, 0.5 watt)
Cs C4 Cs Cs = 0.05 if (or No. 1488; 14-volt, 150-ma) Re, Rs, Rio, RN = 2200 ohms,
0.1 µf), ceramic, 50 v. Ri = 1000 ohms, 0.5 watt 0.5 watt (or 680 ohms.
Cs = 1 sf (or 25 µf), elec- (or 680 ohms, 1 watt) 0.5 watt)
trolytic, 25 v. R2 = 27 ohms. 0.5 watt (or Re, Ro, Fle = 560 ohms, 0.5
CR.,, CR N = crystal 12 ohms, 1 watt) watt (or 180 ohms, 1watt)
diode 1N34 (or 1N3754) Rs = 1000 ohms, 0.5 watt R7. RN" = 150 ohms. 1 watt
L, L, IN = indicator lamp R4 = 1000 ohms, 0.5 watt (or (or 82 ohms, 2 watts)
Notes:
The shift register may use as many stages as desired and may be
made regenerative by connecting points A and A'. In addition, the
basic circuit can be adapted for operation at many different output-
current levels.
117V
GO CPS BEATING
ELEMENT
le
THERMISTOR
ELEMENT
(1000 OHMS AT 25° C)
Cs = 1000 id, electrolytic. RI, R2 = 3000 ohms ± 10%; Rin = 39 ohms ± 10%,
25 v. 0.5 watt 0.5 watt
Cl = 2 id, paper, 200 V. Rs = variable resistor, 500 Rit = 10000 ohms J-.- 10%,
Ci, = 100 isf, electrolytic, ohms, linear taper, 0.5 0.5 watt
15 v. watt Rin = 680 ohms ±- 10%,
Cs = 100 id, electrolytic, Rs = 330 ohms ± 10%, 0.5 0.5 watt
25 v. watt S = toggle switch; single-
F = fuse, 3 amp. 113, R12, R14 = 47 ohms pole, single-throw
= indicator lamp; 117 v., -± 10%, 0.5 watt T1 = transformer; 117-v.
6 watts primary; 25.6 v, 0.6-amp.
K = de relay; single-pole, Rn = 1000 ohms ± 10%, secondary; Thordarson
single-throw, double- 2 watts T-21F27, or equiv.
break; 12-volt de coil, 80 R7, Rs .= 1000 ohms -±- 10%, Ts = transformer, 117-v.
ohms minimum resist- 0.5 watt primary; 6.3 v, 0.6-amp.
ance; Potter-Brumfield Rs = 12000 ohms ± 10%, secondary; Stancor
PR3DY or equiv. 0.5 watt P-6465, or equiv.
Circuits 375
-oK
1
Lo.
ro
o RECEIVER MUTE
R24 TO TRANSMITTER
W V
R25
RI2 R20 TYPE
R13 R19 2N647
R2
2N404 R26
IN2858
TYPES
2N4
830 8 32
831 8 33
S3
IN2S61
+C14
- TYPE
IN2658
R3s 0-1 3C ID
HAND KEY/
r/
rh
Ci, Ci = 1 pf, paper (or Re, Rn, R 12, R20 = 3900 ohms, R29 = volume-control
Mylar), 200 v. 0.5 watt potentiometer, 50000 ohms
Co= 0.47 tif, ceramic, 25 V. R e, R .0 = 18000 ohms. Ra, R. = 10000 ohms,
Ci, Co= 560 pf, ceramic, 0.5 watt 0.5 watt
600 v. Ri, Re = 51000 ohms, Rei = 6800 ohms, 0.5 watt
C6, C9 = 330 pf, ceramic, 0.5 watt Ree = 8200 ohms, 0.5 watt
600 V. Re, R io = potentiometer, R., Ree, Rao = 15000 ohms,
Co. C7 = 0.01 ¡of, ceramic. 10000 ohms 0.5 watt
50 V. R7, RIO = 22000 ohms, 1137, Roo = 47000 ohms,
Cie, Cu = 0.02 ceramic, 0.5 watt 0.5 watt
50 V. Ri, R22, R25 -= 68 ohms, • = 10000 ohms, 1 watt
Ci = 0.1 pf, ceramic, 50 v. 0.5 watt Si = Vibroplex keyer,
Cin, C14 = 2000 pf, electro- RII, Ros = 15000 ohms, or equiv.
lytic, 15 V. 0.5 watt So = toggle switch, double-
Cie = 16 pf, electrolytic. • RI9 = 33000 ohms. pole, double-throw
150 V. 0.5 watt S3 = toggle switch; single-
I = indicator lamp No. 47 R IA, R IS, R:4n, Ree = 27000 pole, single-throw
K = de relay; coil resistance ohms, 0.5 watt ▪ = push-pull output trans-
= 2500 ohms; operating • Ree = 270 ohms, 0.5 watt former (14000 ohm to
current = 4 ma; Putter- R n = 68000 ohms, 0.5 watt V.D.)
Brumfield ML11D, • = 100000 ohms, 0.5 watt Te = power transformer,
or equiv. • = 560 ohms, 0.5 watt Stancor PS8415, P58421,
-= 39000 ohms, 0.5 watt • = 1200 ohms, 0.5 watt or equiv.
376 RCA Transistor Manual
C. = 25 µf, electrolytic, 12 v. = 120 ohms, 0.5 watt rate. Bulbs and other resist-
C. = 100 µf, electrolytic, S = switch ive loads handling currents
12 v. up to one ampere may be
LAMP = bulb, 12 v, NOTE: C. and C. may be used, but inductive loads
1 ampere varied to change flashing should not be used.
R. R. = 2000 ohms. 0.5 watt
R2R., = 100000 ohms,
0.5 watt
Circuits 377
11-46 PHOTO-RELAY
Operates with Light Increase
PHOTOCELL
B = 6 volts, RCA VS317 TYPE 4425
R, = 120 ohms, 0.5 watt
= potentiometer, 5000
ohms; Mallory U-14 or
equivalent TYPE
Relay = 1000 ohms, 2.3-mil- 2N:09
liampere operating cur-
rent: Sigma type 5F or
equivalent
cri
tial and should be insulated
from a common chassis for
safety reasons.
TO CONTROLLED
CIRCUIT
RCA Technical Publications
on Electron Tubes, Semiconductor Products,
and Batteries
378
RCA Technical Publications 379
amplifier application. Single copy free black-and-white and color TV. Fea-
on request tures tube theory written for the
layman, application data, selection
• TECHNICAL BULLETINS—Authorized charts, and typical circuits. Features
information on RCA semiconductor lie-flat binding. Price $1.25*t
products. Be sure to mention type-
number bulletin desired. Single copy • RCA TRANSMITTING TUBES—TT-5
on any type free on request. (8 1
4 " x 5%1-320 pages. Gives data
/
on over 180 power tubes having plate-
input ratings up to 4 kw and on as-
Electron Tubes sociated rectifier tubes. Provides basic
information on generic types, parts
• RCA ELECTRON TUBE HANDBOOK and materials, installation and appli-
—HB-3 (7%" x 5%"). Five 21 4 -inch-
/ cation, and interpretation of data.
capacity binders. Contains over 5000 Contains circuit diagrams for trans-
pages of looseleaf data and curves on mitting and industrial applications.
RCA receiving tubes, transmitting Features lie-flat binding. Price $1.00 41'
tubes, cathode-ray tubes, picture
tubes, photocells, phototubes, camera • RCA POWER TUBES—PG101F (10 7/ 8"
381
Index
Page Page
Absolute Maximum System of Ratings 79 DC-to-DC Converter 366
Alloy-Junction Transistors 10 Earphone Amplifier 353
Alpha Characteristic 15 Eccles-Jordan Multivibrator 46
AM/FM Automobile Radio Circuit 347 Electronic Keyer 375
Amplification 24 Electronic Thermostat 374
Amplifiers: Filter 46
Audio 24 Flipflop 45
Class A 24 FM Stereo Multiplex Adapter 355
Class AB 24 "Front End" for Radio Receiv-
Class B 24 ers 351, 362
Class C 24 Gating Circuits 47
Differential 36 Grid-Dip Meter 376
Direct-Coupled 35 IF Amplifier (30-Mc) 363
Intermediate-Frequency 30 Ignition System:
Neutralized 32 6-volt 371
Phase Inverter 30 12-volt 371
Power 26 Light-Dimmer Control 377
Push-Pull 28 Light-Flasher 376
Radio-Frequency 30 Logic 47
Tuned 30 Monostable 46
Unilateralized 32 Motor-Speed Control 376
Anode 8 NAND 48
Astable Circuits 45 NOR 47
Astable Multivibrator Circuit 45, 46 OR 47
Audio Amplifiers 24 Phonograph Amplifier 353
Audio Amplifier Circuit (25 watt) ... 354 Photo-Relay 377
Audio-Power Amplifiers 26 Portable Radio Receivers .... 344, 345
Automatic Gain Control 33 Power Amplifier. 70-Mc 361
Automobile Radio Circuit: Power Oscillator:
6-volt 346 100-Kc 364
12-volt 347 70-Mc 365
Avalanche Voltage 50 Power Supply For Amateur
Transmitter 358
Preamplifier 352
Radio Receiver, 3-band 350
Barrier, Energy 6
Regulator:
Beta Characteristic 15
Series 35
Biasing 6, 18 Shunt 35
Bistable Circuits 45 Resonant 30
Bistable Multivibrator Circuit 45, 46
Servo Amplifier 364
Blocking Oscillator 43 Single-Phase Full-Wave 54
Breakdown Voltage 16. 50 Single-Phase Full-Wave Bridge 55
Bridge Circuits: Single-Phase Half-Wave 54
Single-Phase Full-Wave 54 Six-Phase Star 56
Three-Phase (Y) Half-Wave 55 Shift Register 373
Stereo Amplifiers 356, 357
Three-Phase Double-Y and
C alculatión of, Interphase Transformer 55
Heat-Sink Size 51 Three-Phase (Y) Half-Wave 55
"Q" (selectivity) 31 Triggered 46
Transistor Dissipation 79 Video Amplifier 361
Capacitive Division 34 Voltage Regulator, Shunt Type:
Characteristics: 81 Regulation — 0.5% 367
Alpha 15 Regulation — 1.5% 368
Beta 15 Voltage Regulator, Series Type:
Dynamic 15 Adjustable Regulation 368
Static 15 Regulation — 2% 367
Chopper-Type Circuits 36 Voltage-Sensitive Switches 372
Circuits: Circuit Configurations 11
AM/FM Automobile Radio 348 Circuit Stability 23
AND 47 Clapp Oscillator 40
Astable Multivibrator 45, 369 Class A Amplifier 24
Audio Amplifier (25-watt) 354 Class AB Amplifier 24
Automobile Radio, 6-volt 346 Class B Amplifier 24
Automobile Radio. 12-volt 347 Class C Amplifier 24
Bistable Multivibrator 45, 370 Code-Practice Oscillator (Circuit) 378
Chopper-Type 36 Collector-Characteristic Curve 14
Citizens-Band Transceiver 359 Colpitts Oscillator 40
Citizens-Band Transmitter 360 Compensating Diodes 74
Code-Practice Oscillator 377 Complementary Symmetry 30
Crystal Oscillator, 27-Mc 365 Controls, Tone and Volume 26
382
Index 383
Page Page
OR Circuits 47
Oscillation 36
Fall Time (tr) 45 Oscillators:
Fault Current 50 Blocking 43
Feedback 25 Clapp 40
Figure-of-Merit 70 Colpitts 40
Filters 78 Crystal 40
Fixed Bias 18 Hartley 40
Flipflop Circuit 45 LC Resonant Feedback 37
FM Stereo Multiplex Adapter (Circuit) 355 Nonsinusoidal 42
Forward Bias 6 Pierce 41
Forward Characteristics, Silicon RC Resonant Feedback 41
Rectifier 50 Wien 42
Forward Current-Transfer Ratio 15 Outlines 332
Frequency Compensation 25 Overload Protection 53, 62
Frequency Cutoff 15
"Front End" for Radio Receivers
(Circuits) 351, 362 Parallel Arrangement 52
Parametric Diode 8
Peak Recurrent Forward Current 50
Peak Reverse Voltage 50
G ain-Bandwith Product 15 Phase Inverter 30
Gain, Automatic Control 33 Phonograph Amplifier (Circuit) 353
Gating Circuits 47 Photo-Relay Circuit 377
384 RCA Transistor Manual
Page Page
SHORT LEAD
OR PIN
ORIENTATION INDICATOR
(INDEX TAB) FLEXIBLE LONG LEAD
NOTES:
Elongated case symbol denotes "in-line" arrangement of elec-
trode terminals.
Arrow on case of diodes or emitter lead of transistor diagrams
indicates direction of "conventional current flow"; electron cur-
rent flows in a direction opposite to the arrows.
RCA
TRANSISTOR
MANUAL
Revised and up-dated for the reader
who wants to be informed of the
latest changes in semiconductor-de-
vice technology and data. Features
over 200 additions to RCA's exten-
sive line of semiconductor products.
The popular Circuits Section has
also been revised to include several
new interesting and practical circuit
applications.
NEW FEATURES
• Complete chapter on silicon con-
trolled rectifiers discussing basic
operation and applications.
• Revised application guide speci-
fying recommended usage for
RCA transistors.
• Additions to the expanded Tech-
nical Data Section include va-
ractor diodes, silicon controlled
rectifiers, high-voltage rectifiers,
tunnel diodes, and many new
types of transistors.
• AND, for the experimenter and
hobbyist, several new circuits
including two portable radio re-
ceivers, a variety of hi-fi and
stereo components, a five-watt
citizens-band transmitter, ignition
systems, electronic control cir-
cuits, and many other popular
applications.