LMH 6702
LMH 6702
LMH 6702
LMH6702
SNOSA03H – NOVEMBER 2002 – REVISED MAY 2016
-3 -230
-70
-4 AV = -4 -280 -75 HD3, RL = 100 :
-80
-5 -330 -85
AV = -10
-90
-6 -380
-95 HD3, RL = 1 k:
-7 -430 -100
1M 10M 100M 1G -105
Frequency (Hz) 1M 10M 100M
Frequency (Hz)
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LMH6702
SNOSA03H – NOVEMBER 2002 – REVISED MAY 2016 www.ti.com
Table of Contents
1 Features .................................................................. 1 7.3 Device Functional Modes........................................ 12
2 Applications ........................................................... 1 8 Application and Implementation ........................ 13
3 Description ............................................................. 1 8.1 Application Information............................................ 13
4 Revision History..................................................... 2 8.2 Typical Application ................................................. 13
5 Pin Configuration and Functions ......................... 3 9 Power Supply Recommendations...................... 15
6 Specifications......................................................... 4 10 Layout................................................................... 15
6.1 Absolute Maximum Ratings ...................................... 4 10.1 Layout Guidelines ................................................. 15
6.2 ESD Ratings.............................................................. 4 10.2 Layout Example .................................................... 16
6.3 Recommended Operating Conditions....................... 4 11 Device and Documentation Support ................. 17
6.4 Thermal Information .................................................. 4 11.1 Documentation Support ....................................... 17
6.5 Electrical Characteristics........................................... 5 11.2 Community Resources.......................................... 17
6.6 Typical Characteristics .............................................. 7 11.3 Trademarks ........................................................... 17
7 Detailed Description ............................................ 11 11.4 Electrostatic Discharge Caution ............................ 17
7.1 Overview ................................................................. 11 11.5 Glossary ................................................................ 17
7.2 Feature Description................................................. 11 12 Mechanical, Packaging, and Orderable
Information ........................................................... 17
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
• Added, updated, or renamed the following sections: Device Information; Specifications; Application and
Implementation; Power Supply Recommendations; Layout; Device and Documentation Support; Mechanical,
Packaging, and Ordering Information .................................................................................................................................... 1
• Changed ±5 V to ±4 V in Recommended Operating Conditions............................................................................................ 4
DBV Package
5-Pin SOT-23 D Package
Top View 8-Pin SOIC
Top View
1 5 + 1 8
OUT V N/C N/C
2 7 +
-IN - V
- 2
V
3 6
+ - +IN + OUT
3 4
+IN -IN
- 4 5
V N/C
Pin Functions
PIN
NUMBER I/O DESCRIPTION
NAME
D DBV
-IN 2 4 I Inverting input voltage
+IN 3 3 I Non-inverting input voltage
N/C 1, 5, 8 – – No connection
OUT 6 1 O Output
V- 4 2 I Negative supply
V+ 7 5 I Positive supply
6 Specifications
6.1 Absolute Maximum Ratings
(1) (2)
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VS ±6.75 V
(3)
IOUT See
Common mode input voltage V− to V+ V
Maximum junction temperature 150 °C
Storage temperature −65 150 °C
Infrared or convection (20 s) 235 °C
Soldering information
Wave soldering (10 s) 260 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.
(3) The maximum output current (IOUT) is determined by device power dissipation limitations.
(1) Human body model: 1.5 kΩ in series with 100 pF. JEDEC document JEP155 states that 2000-V HBM allows safe manufacturing with a
standard ESD control process. Manufacturing with less than 2000-V HBM is possible with the necessary precautions. Pins listed as
±2000 V may actually have higher performance.
(2) Machine model: 0 Ω in series with 200 pF. JEDEC document JEP157 states that 200-V MM allows safe manufacturing with a standard
ESD control process. Manufacturing with less than 200-V MM is possible with the necessary precautions. Pins listed as ±200 V may
actually have higher performance.
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications, see the Electrical
Characteristics tables.
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report (SPRA953).
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables under
conditions of internal self-heating where TJ > TA. Min/Max ratings are based on production testing unless otherwise specified.
(2) All limits are ensured by testing or statistical analysis.
(3) Typical numbers are the most likely parametric norm.
(4) Slew Rate is the average of the rising and falling edges.
(5) Harmonic distortion is strongly influenced by package type (SOT-23 or SOIC). See Application Note section under Harmonic Distortion
for more information.
(6) Drift determined by dividing the change in parameter at temperature extremes by the total temperature change.
(7) Negative input current implies current flowing out of the device.
1 150 1 -30
GAIN AV = +1 AV = -1
GAIN
0 100 0 AV = -2 -80
AV = +2
-1 50 -1 -130
PHASE AV = +4
PHASE
-2 0 -2 -180
Phase (°)
Gain (dB)
Phase (°)
Gain (dB)
-3 -50 -3 -230
AV = +4
-4 -100 -4 AV = -4 -280
AV = +2
-5 -150 -5 -330
AV = +1 AV = -10
-6 -200 -6 -380
AV = +10
-7 -250 -7 -430
1M 10M 100M 1G 1M 10M 100M 1G
Frequency (Hz) Frequency (Hz)
V0 = 2 Vpp RL = 100 Ω RF = 237 Ω VOUT = 2 VPP RF = 237 Ω RL = 100 Ω
Phase (°)
-3
Gain (dB)
Gain (dB)
PHASE
Phase (°)
-4 0 -3 -50
-5 -54
-4 1 k: -100
1 k:
-6 -108
-5 -150
-7 -162 100 :
-216 -6 -200
-8 50 :
-9 -270 -7 -250
10M 100M 1G 10G 0 200M 400M 600M 800M 1G
Frequency (Hz) Frequency (Hz)
VOUT = 0.5 VPP AV = 2 RF = 232 Ω AV = 2 VO = 2 VPP RF = 237 Ω
Figure 3. Small Signal Bandwidth Figure 4. Frequency Response for Various RLs, AV = 2
1 150 1.5
GAIN
0 100
1
-1 50
PHASE
1 k: 0.5 AV = +2
-2 0
Phase (°)
VOUT (V)
Gain (dB)
50 :
-3 -50 0
-4 -100
-0.5 AV = -2
50 :
-5 -150
-1
-6 -200
-7 100 :
-250 -1.5
0 100M 200M 300M 400M 500M 0 2 4 6 8 10 12 14
Frequency (Hz) Time (ns)
AV = 4 VO = 2 VPP RF = 237 Ω VO = 2 VPP RL = 100 Ω
Figure 5. Frequency Response for Various RLs, AV = 4 Figure 6. Step Response, 2 VPP
1 0.1
-1
0.01
-2
-3
-4 0.001
0 10 20 30 40 50 60 1 10 100 1k
Time (ns) Time (ns)
PS (dBc)
-70
-70
-75 HD3, RL = 100 :
-80
-80
-85 -90 50 MHz
-90
-95 HD3, RL = 1 k: -100
-100 25 MHz
-105 -110
1M 10M 100M -5 -3 -1 1 3 5
Frequency (Hz)
Test Tone Power at 50 : Load (dBm)
2 VPP AV = 2 RF = 237 Ω AV = 2 RL = 100 Ω RF = 237 Ω
Figure 9. Harmonic Distortion vs Load and Frequency Figure 10. 2 Tone 3rd Order Spurious Level
(SOIC Package) (SOIC Package)
100 25 -50
90 0.05% SETTLING 60MHz
-60
80 20
70 20MHz
-70
Settling Time (ns)
60 15
HD (dBc)
RS (:)
50 -80
40 0.1% SETTLING 10
RS
-90
30 10MHz
20 5
-100
10 5MHz
0 0 -110
1 10 100 1k 10k -10 -5 0 5 10 15 20
CL (pF) POUT (dBm)
AV = -1 RL = 1 kΩ AV = 2 RF = 237 Ω RL = 100 Ω
Figure 11. RS and Settling Time vs CL Figure 12. HD2 vs Output Power (Across 100 Ω)
(SOIC Package)
-0.5
-70
-1
20 MHz
VOS (mV)
HD (dBc)
-80
-1.5
-90 -2 UNIT 2
Figure 13. HD3 vs Output Power (Across 100 Ω) Figure 14. Input Offset for 3 Representative Units
(SOIC Package)
10 -4
UNIT 3
8
-5
6
-6 UNIT 3
4
2 IBN (µA) -7
IBI (µA)
UNIT 2
0 -8
UNIT 2
-2
UNIT 1 -9
-4
-10
-6 UNIT 1
-8 -11
-10 -12
-40 -15 10 35 60 85 110 135 -40 -15 10 35 60 85 110 135
TEMPERATURE (°C) TEMPERATURE (°C)
Figure 15. Inverting Input Bias Figure 16. Non-Inverting Input Bias for 3 Representative
for 3 Representative Units Units
1000 70 15
+ PSRR
60 5
Hz)
Hz)
50 -5
100
CMRR/PSRR (dB)
INVERTING CURRENT
NOISE CURRENT (pA/
NOISE VOLTAGE (nV/
- PSRR
20 Log (RO)
40 -15
CMRR
30 -25
NON-INVERTING
10
CURRENT
20 -35
RO
VOLTAGE 10 -45
1
100 1k 10k 100k 1M 10M 0 -55
1k 10k 100k 1M 10M 100M
FREQUENCY (Hz)
Frequency (Hz)
VS = ±5 V RL = 100 Ω
Phase (°)
Gain (dB)
DG (%)
DP (°)
70 120 0 0
60 100
PHASE -0.002
50 80 -0.01
DG
40 60
-0.02 -0.004
30 40
20 20 -0.006
-0.03
10k 100k 1M 10M 100M 1G -1.5 -1.2 -0.9 -0.6 -0.3 0 0.3 0.6 0.9 1.2 1.5
Frequency (Hz) VOUT (V)
VS = ±5 V RL = 100 Ω RF = 237 Ω RL = 150 Ω
0.02 0.006
DP
0.01 0.003
DG (%)
DP (°)
0 0
-0.01 -0.003
DG
-0.02 -0.006
-0.03 -0.009
-1.5 -1.2 -0.9 -0.6 -0.3 0 0.3 0.6 0.9 1.2 1.5
VOUT (V)
RF = 237 Ω RL = 150 Ω
7 Detailed Description
7.1 Overview
The LMH6702 has been optimized for exceptionally low harmonic distortion while driving very demanding
resistive or capacitive loads. Generally, when used as the input amplifier to very high speed flash ADCs, the
distortions introduced by the converter will dominate over the low LMH6702 distortions shown in Typical
Characteristics.
-40
-60
CPOS & CNEG
REMOVED
-70
-80
-90
1 10 100
Frequency (MHz)
Figure 22. Decoupling Current Adverse Effect on a Board with Shared Ground Plane
At these extremely low distortion levels, the high frequency behavior of decoupling capacitors themselves could
be significant. In general, lower value decoupling caps tend to have higher resonance frequencies making them
more effective for higher frequency regions. A particular application board which has been laid out correctly with
ground returns split to minimize coupling, would benefit the most by having low value and higher value capacitors
paralleled to take advantage of the effective bandwidth of each and extend low distortion frequency range.
Another important variable in getting the highest fidelity signal from the LMH6702 is the package itself. As
already noted, coupling between high frequency current transients on supply lines and the device input can lead
to excess harmonic distortion. An important source of this coupling is in fact through the device bonding wires. A
smaller package, in general, will have shorter bonding wires and therefore lower coupling. This is true in the case
of the SOT-23 compared to the SOIC package where a marked improvement in HD can be measured in the
SOT-23 package. Figure 23 shows the HD comparing SOT-23 to SOIC package:
-60
HD2, SOIC
-65
-70
-75
HD2, SOT23
HD2 (dBc)
-80
-85
-90 HD3, SOIC
-95
HD3, SOT23
-100
-105
-110
1 10 100
Frequency (MHz)
The LMH6702 data sheet shows both SOT-23 and SOIC data in Electrical Characteristics to aid in selecting the
right package. Typical Characteristics shows SOIC package plots only.
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
+5V 6.8µF
VIN
3 7 CPOS
+ VOUT
CSS 6
RIN LMH6702
0.1µF
-
2 4 CNEG
RF
.01µF
RG
6.8µF
-5V
+5V 6.8µF
RF VOUT
.01µF AV = =
RG VIN
3 7 CPOS
+ VOUT
CSS 6
25: LMH6702
0.1µF
-
2 4 CNEG
VIN RG RF
.01µF
RT SELECT RT TO
6.8µF YIELD DESIRED
-5V RIN = RT||RG
ADC
+ RS
LMH6702
- CIN
80 20
70
RS (:)
50
40 0.1% SETTLING 10
RS
30
20 5
10
0 0
1 10 100 1k 10k
CL (pF)
AV = -1 RL = 1 kΩ
10 Layout
11.3 Trademarks
VIP10, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
11.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
www.ti.com 30-Sep-2021
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)
LMH6702MFX/NOPB ACTIVE SOT-23 DBV 5 3000 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 A83A
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com 30-Sep-2021
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 5-Jan-2022
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 5-Jan-2022
Pack Materials-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 5-Jan-2022
TUBE
Pack Materials-Page 3
PACKAGE OUTLINE
DBV0005A SCALE 4.000
SOT-23 - 1.45 mm max height
SMALL OUTLINE TRANSISTOR
C
3.0
2.6 0.1 C
1.75 1.45
B A
1.45 0.90
PIN 1
INDEX AREA
1 5
2X 0.95 (0.1)
3.05
2.75
1.9 1.9
2
(0.15)
4
3
0.5
5X
0.3
0.15
0.2 C A B NOTE 5 (1.1) TYP
0.00
0.25
GAGE PLANE 0.22
TYP
0.08
8
TYP 0.6
0 TYP SEATING PLANE
0.3
4214839/G 03/2023
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. Refernce JEDEC MO-178.
4. Body dimensions do not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.25 mm per side.
5. Support pin may differ or may not be present.
www.ti.com
EXAMPLE BOARD LAYOUT
DBV0005A SOT-23 - 1.45 mm max height
SMALL OUTLINE TRANSISTOR
PKG
5X (1.1)
1
5
5X (0.6)
SYMM
(1.9)
2
2X (0.95)
3 4
SOLDER MASK
SOLDER MASK METAL METAL UNDER OPENING
OPENING SOLDER MASK
4214839/G 03/2023
NOTES: (continued)
www.ti.com
EXAMPLE STENCIL DESIGN
DBV0005A SOT-23 - 1.45 mm max height
SMALL OUTLINE TRANSISTOR
PKG
5X (1.1)
1
5
5X (0.6)
SYMM
2 (1.9)
2X(0.95)
3 4
(R0.05) TYP
(2.6)
4214839/G 03/2023
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
www.ti.com
PACKAGE OUTLINE
D0008A SCALE 2.800
SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
SEATING PLANE
.228-.244 TYP
[5.80-6.19]
.004 [0.1] C
A PIN 1 ID AREA
6X .050
[1.27]
8
1
.189-.197 2X
[4.81-5.00] .150
NOTE 3 [3.81]
4X (0 -15 )
4
5
8X .012-.020
B .150-.157 [0.31-0.51]
.069 MAX
[3.81-3.98] .010 [0.25] C A B [1.75]
NOTE 4
.005-.010 TYP
[0.13-0.25]
4X (0 -15 )
SEE DETAIL A
.010
[0.25]
.004-.010
0 -8 [0.11-0.25]
.016-.050
[0.41-1.27] DETAIL A
(.041) TYPICAL
[1.04]
4214825/C 02/2019
NOTES:
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.
Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed .006 [0.15] per side.
4. This dimension does not include interlead flash.
5. Reference JEDEC registration MS-012, variation AA.
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EXAMPLE BOARD LAYOUT
D0008A SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55]
SYMM SEE
DETAILS
1
8
8X (.024)
[0.6] SYMM
(R.002 ) TYP
[0.05]
5
4
6X (.050 )
[1.27]
(.213)
[5.4]
EXPOSED
METAL EXPOSED
METAL
.0028 MAX .0028 MIN
[0.07] [0.07]
ALL AROUND ALL AROUND
4214825/C 02/2019
NOTES: (continued)
www.ti.com
EXAMPLE STENCIL DESIGN
D0008A SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55] SYMM
1
8
8X (.024)
[0.6] SYMM
(R.002 ) TYP
5 [0.05]
4
6X (.050 )
[1.27]
(.213)
[5.4]
4214825/C 02/2019
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
www.ti.com
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