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    2SB624

    Uploaded by

    asam youssef
    This document provides specifications for the 2SB624 PNP silicon plastic encapsulated transistor. Key details include: - Electrical ratings including a DC current gain of 200 typically, collector-emitter breakdown voltage of -25V maximum, and collector current of -700mA continuous maximum. - Package and marking information for the SOT-23 surface mount package including package type, leader size, and product rank markings. - Absolute maximum ratings and electrical characteristics tables with test conditions and typical/minimum-maximum parameter values. - A characteristics curve graph is included showing collector current vs collector-emitter voltage.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    2SB624

    Uploaded by

    asam youssef
    18 views2 pages
    This document provides specifications for the 2SB624 PNP silicon plastic encapsulated transistor. Key details include: - Electrical ratings including a DC current gain of 200 typically, collector-emitter breakdown voltage of -25V maximum, and collector current of -700mA continuous maximum. - Package and marking information for the SOT-23 surface mount package including package type, leader size, and product rank markings. - Absolute maximum ratings and electrical characteristics tables with test conditions and typical/minimum-maximum parameter values. - A characteristics curve graph is included showing collector current vs collector-emitter voltage.

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    This document provides specifications for the 2SB624 PNP silicon plastic encapsulated transistor. Key details include: - Electrical ratings including a DC current gain of 200 typically, collector-emitter breakdown voltage of -25V maximum, and collector current of -700mA continuous maximum. - Package and marking information for the SOT-23 surface mount package including package type, leader size, and product rank markings. - Absolute maximum ratings and electrical characteristics tables with test conditions and typical/minimum-maximum parameter values. - A characteristics curve graph is included showing collector current vs collector-emitter voltage.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    18 views2 pages

    2SB624

    Uploaded by

    asam youssef
    This document provides specifications for the 2SB624 PNP silicon plastic encapsulated transistor. Key details include: - Electrical ratings including a DC current gain of 200 typically, collector-emitter breakdown voltage of -25V maximum, and collector current of -700mA continuous maximum. - Package and marking information for the SOT-23 surface mount package including package type, leader size, and product rank markings. - Absolute maximum ratings and electrical characteristics tables with test conditions and typical/minimum-maximum parameter values. - A characteristics curve graph is included showing collector current vs collector-emitter voltage.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    2SB624

    -0.7A , -30V
    Elektronische Bauelemente PNP Silicon Plastic Encapsulated Transistor

    RoHS Compliant Product


    A suffix of “-C” specifies halogen & lead-free

    FEATURES SOT-23
     High DC Current Gain. hFE：200 (Typ.) (VCE= -1V, IC= -100mA)
    A
     Complimentary to 2SD596 L
    3
    3

    Top View C B
    MARKING 1
    1 2
    Product-Rank 2SB624-BV1 2SB624-BV2 2SB624-BV3 K E 2

    Range 110~180 135~220 170~270


    D
    Product-Rank 2SB624-BV4 2SB624-BV5
    F G H J
    Range 200~320 250~400
    Millimeter Millimeter
    REF. REF.
    Min. Max. Min. Max.
    A 2.80 3.00 G 0.10 REF.
    B 2.25 2.55 H 0.55 REF.
    PACKAGE INFORMATION C 1.20 1.40 J 0.08 0.15
    D 0.90 1.15 K 0.5 REF.
    Package MPQ LeaderSize E 1.80 2.00 L 0.95 TYP.
    F 0.30 0.50

    SOT-23 3K 7’ inch
    Collector
    
    
    
    Base


    Emitter

    ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)


    Parameter Symbol Ratings Unit
    Collector to Base Voltage VCBO -30 V
    Collector to Emitter Voltage VCEO -25 V
    Emitter to Base Voltage VEBO -5 V
    Collector Current - Continuous IC -700 mA
    Collector Power Dissipation PC 200 mW
    Junction and Storage Temperature TJ, TSTG 150, -55~150 °C

    ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)


    Parameter Symbol Min. Typ. Max. Unit Test Conditions
    Collector to Base Breakdown Voltage V(BR)CBO -30 - - V IC= -100A, IE=0
    Collector to Emitter Breakdown Voltage V(BR)CEO -25 - - V IC= -1mA, IB=0
    Emitter to Base Breakdown Voltage V(BR)EBO -5 - - V IE= -100A, IC=0
    Collector Cut-off Current ICBO - - -0.1 A VCB= -30V, IE=0
    Emitter Cut-off Current IEBO - - -0.1 A VEB= -5V, IC=0
    hFE (1)* 110 - 400 VCE= -1V, IC= -100mA
    DC Current Gain
    hFE (2)* 50 - - VCE= -1V, IC= -700mA
    Collector to Emitter
    VCE(sat) * - - -0.6 V IC= -700mA, IB= -70mA
    Saturation Voltage
    *
    Base to Emitter Saturation Voltage VBE -0.6 - -0.7 V VCE= -6V, IC= -10mA
    Transition Frequency fT - 160 - MHz VCE= -6V, IC= -10mA
    Collector Output Capacitance Cob - 17 - pF VCB= -6V, IE=0, f=1MHz
    *Pulse test：Pulse width ≦ 350 s, Duty Cycle ≦ 2%.
    http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

    15-Feb-2011 Rev. A Page 1 of 2


    2SB624
    -0.7A , -30V
    Elektronische Bauelemente PNP Silicon Plastic Encapsulated Transistor

    CHARACTERISTICS CURVE

    http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

    15-Feb-2011 Rev. A Page 2 of 2

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