Ee353 Power Electronics (Mid - SP23)
Ee353 Power Electronics (Mid - SP23)
Ee353 Power Electronics (Mid - SP23)
INSTRUCTIONS:
1. The question paper contains 5 questions each of 5 marks and total 25 marks.
2. Attempt all questions.
3. The missing data, if any, may be assumed suitably.
4. Tables/Data handbook/Graph paper etc., if applicable, will be supplied to the candidates
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Q.1(a) Discuss the ideal and practical i-v characteristics of a power diode. [2] 1 2
Q.1(b) Explain with the help of a neat diagram the reverse recovery characteristics of power [3] 1 2
diodes.
Q.3(a) State the differences between BJT and Power MOSFET. [2] 1 1
Q.3(b) Draw an explain the transfer and output characteristics of n-channel Power MOSFET. [3] 1 1
Q.5(a) Explain the switching characteristics of Power MOSFET with proper waveforms. [2] 1 2
Q.5(b) Explain Class F line commutation technique for a thyristor. [3] 1 1
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