Z ibo Seno Electronic Engineering Co., Ltd.

1N5820 – 1N5822
3.0A SCHOTTKY BARRIER RECTIFIER
Features
! Schottky Barrier Chip
! Guard Ring Die Construction for
Transient Protection
! High Current Capability A B A
! Low Power Loss, High Efficiency
! High Surge Current Capability
! For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications C
D

Mechanical Data DO-201AD

! Case: Molded Plastic Dim Min Max
! Terminals: Plated Leads Solderable per A 25.4
24.5 —
MIL-STD-202, Method 208 B 8.50
7.20 9.50
! Polarity: Cathode Band C 1.10
1.20 1.30
! Weight: 1.2 grams (approx.) D 5.00
5.0 5.60
! Mounting Position: Any All Dimensions in mm
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version

Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

Characteristic Symbol 1N5820 1N5821 1N5822 Unit

Peak Repetitive Reverse Voltage VRRM

Working Peak Reverse Voltage VRWM 20 30 40 V
DC Blocking Voltage VR

RMS Reverse Voltage VR(RMS) 14 21 28 V

Average Rectified Output Current (Note 1) @TL = 90°C IO 3.0 A

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load IFSM 80 A
(JEDEC Method) @TL = 75°C

Forward Voltage @IF = 3.0A VFM 0.475 0.50 0.525 V

Peak Reverse Current @TA = 25°C 2.0

IRM mA
At Rated DC Blocking Voltage @TA = 100°C 20

Typical Junction Capacitance (Note 2) Cj 250 pF

Typical Thermal Resistance Junction to Ambient R
JA 20 K/W

Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C

Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

1N5820 – 1N5822 1 of 2 www.senocn.com

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 Z ibo Seno Electronic Engineering Co., Ltd.

1N5820 – 1N5822

4 30
Single Phase Half-Wave

IF, INSTANTANEOUS FORWARD CURRENT (A)

I(AV), AVERAGE OUTPUT CURRENT (A)

60 Hz Resistive or Inductive
Load 9.5mm Lead Length

10
3

2
1.0

1
Tj = 25ºC
Pulse Width = 300µs
2% Duty Cycle

0 0.1
10 50 100 150 0.1 0.3 0.5 0.7 0.9 1.1

TL, LEAD TEMPERATURE (ºC) VF, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 1 Forward Current Derating Curve Fig. 2 Typical Forward Voltage Characteristics

100 1000
Tj = 25ºC
IFSM , PEAK FORWARD SURGE CURRENT (A)

f = 1MHz
Cj, JUNCTION CAPACITANCE (pF)

80

60
100

40

20
8.3ms Single Half Sine-Wave
JEDEC Method

0 10
0.1 1.0 10 100
1 10 100
NUMBER OF CYCLES AT 60 Hz VR, REVERSE VOLTAGE (V)
Fig. 3 Peak Forward Surge Current Fig. 4 Typical Junction Capacitance

1N5820 – 1N5822 2 of 2 www.senocn.com

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