DATA SHEET

SILICON POWER TRANSISTOR

2SC4552
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING

The 2SC4552 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT: mm)
switching and features low VCE(sat) and high hFE. This transistor is
ideal for use in drivers such as DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.

FEATURES
• High hFE and low VCE(sat):
hFE ≥ 100 (VCE = 2 V, IC = 3 A)
VCE(sat) ≤ 0.3 V (IC = 8 A, IB = 0.4 A)
• Mold package that does not require an insulating board or
insulation bushing

ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Electrode Connection

1. Base
Parameter Symbol Ratings Unit 2. Collector
3. Emitter
Collector to base voltage VCBO 100 V

Collector to emitter voltage VCEO 60 V

Emitter to base voltage VEBO 7.0 V

Collector current (DC) IC(DC) 15 A

Collector current (pulse) IC(pulse)* 30 A

Base current (DC) IB(DC) 7.5 A

Total power dissipation PT (Tc = 25°C) 30 W

Total power dissipation PT (Ta = 25°C) 2.0 W

Junction temperature Tj 150 °C

Storage temperature Tstg −55 to +150 °C

* PW ≤ 300 µs, duty cycle ≤ 10%

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. D15598EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K) © 2002
1998
Printed in Japan
 2SC4552

ELECTRICAL CHARACTERISTICS (Ta = 25°°C)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Collector to emitter voltage VCEO(SUS) IC = 8.0 A, IB = 0.8 A, L = 1 mH 60 V

Collector to emitter voltage VCEX(SUS) IC = 8.0 A, IB1 = −IB2 = 0.8 A, 60 V

VBE(OFF) = −1.5 V, L = 180 µH, clamped

Collector cutoff current ICBO VCB = 60 V, IE = 0 10 µA

Collector cutoff current ICER VCE = 60 V, RBE = 50 Ω, Ta = 125°C 1.0 mA

Collector cutoff current ICEX1 VCE = 60 V, VBE(OFF) = −1.5 V 10 µA

Collector cutoff current ICEX2 VCE = 60 V, VBE(OFF) = −1.5 V, 1.0 mA

Ta = 125°C

Emitter cutoff current IEBO VEB = 5.0 V, IC = 0 10 µA

DC current gain hFE1* VCE = 2.0 V, IC = 1.5 A 100

DC current gain hFE2* VCE = 2.0 V, IC = 3.0 A 100 400

DC current gain hFE3* VCE = 2.0 V, IC = 8.0 A 60

Collector saturation voltage VCE(sat)1* IC = 8.0 A, IB = 0.4 A 0.3 V

Collector saturation voltage VCE(sat)2* IC = 12 A, IB = 0.6 A 0.5 V

Base saturation voltage VBE(sat)1* IC = 8.0 A, IB = 0.4 A 1.2 V

Base saturation voltage VBE(sat)2* IC = 12 A, IB = 0.6 A 1.5 V

Collector capacitance Cob VCB = 10 V, IE = 0, f = 1.0 MHz 180 pF

Gain bandwidth product fT VCE = 10 V, IC = 1.5 A 120 MHz

Turn-on time ton IC = 8.0 A, RL = 6.3 Ω, 0.3 µs

IB1 = −IB2 = 0.4 A, VCC ≅ 50 V
Storage time tstg 1.5 µs
Refer to the test circuit.
Fall time tf 0.3 µs

* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%

hFE CLASSIFICATION

Marking M L K

hFE2 100 to 200 150 to 300 200 to 400

SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT

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2 Data Sheet D15598EJ2V0DS

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Data Sheet D15598EJ2V0DS 5

 2SC4552

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M8E 00. 4