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    P3057LCG Niko-Sem: N-Channel Logic Level Enhancement Mode Field Effect Transistor

    Uploaded by

    lepicane7
    This document provides information on the NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor. It lists the product's maximum ratings and characteristics, including an on-state drain current of 6A, a drain-source on-state resistance of 48-85 mOhms, and operating junction and storage temperatures from -55 to 150°C. Dimensions for the SOT-89 package are also provided, ranging from 1.3-1.7mm for height to 3.8-4.6mm for width.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    P3057LCG Niko-Sem: N-Channel Logic Level Enhancement Mode Field Effect Transistor

    Uploaded by

    lepicane7
    24 views4 pages
    This document provides information on the NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor. It lists the product's maximum ratings and characteristics, including an on-state drain current of 6A, a drain-source on-state resistance of 48-85 mOhms, and operating junction and storage temperatures from -55 to 150°C. Dimensions for the SOT-89 package are also provided, ranging from 1.3-1.7mm for height to 3.8-4.6mm for width.

    Original Description:

    P3057 N-Channel Logic Level Enhancement Mode Field Effect Transistor

    Original Title

    3057

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    © © All Rights Reserved

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    This document provides information on the NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor. It lists the product's maximum ratings and characteristics, including an on-state drain current of 6A, a drain-source on-state resistance of 48-85 mOhms, and operating junction and storage temperatures from -55 to 150°C. Dimensions for the SOT-89 package are also provided, ranging from 1.3-1.7mm for height to 3.8-4.6mm for width.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    24 views4 pages

    P3057LCG Niko-Sem: N-Channel Logic Level Enhancement Mode Field Effect Transistor

    Uploaded by

    lepicane7
    This document provides information on the NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor. It lists the product's maximum ratings and characteristics, including an on-state drain current of 6A, a drain-source on-state resistance of 48-85 mOhms, and operating junction and storage temperatures from -55 to 150°C. Dimensions for the SOT-89 package are also provided, ranging from 1.3-1.7mm for height to 3.8-4.6mm for width.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    NIKO-SEM N-Channel Logic Level Enhancement P3057LCG

    Mode Field Effect Transistor SOT-89


    Lead-Free

    3
    PRODUCT SUMMARY
    V(BR)DSS RDS(ON) ID 1. GATE

    2
    2. DRAIN
    25 50mΩ 6A G
    3. SOURCE

    1
    S
    ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
    PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
    Gate-Source Voltage VGS ±20 V
    TC = 25 °C 6
    Continuous Drain Current ID
    TC = 100 °C 4 A
    1
    Pulsed Drain Current IDM 20
    TC = 25 °C 3
    Power Dissipation PD W
    TC = 100 °C 1.2
    Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150
    1
    °C
    Lead Temperature ( /16” from case for 10 sec.) TL 275

    THERMAL RESISTANCE RATINGS


    THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
    Junction-to-Case RθJC 18
    °C / W
    Junction-to-Ambient RθJA 160
    1
    Pulse width limited by maximum junction temperature.
    2
    Duty cycle ≤ 1%

    ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)


    LIMITS
    PARAMETER SYMBOL TEST CONDITIONS UNIT
    MIN TYP MAX
    STATIC
    Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 25
    V
    Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 0.8 1.2 2.5
    Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 nA
    VDS = 20V, VGS = 0V 25
    Zero Gate Voltage Drain Current IDSS µA
    VDS = 20V, VGS = 0V, TJ = 125 °C 250

    On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 6 A

    Drain-Source On-State VGS = 4.5V, ID = 3A 70 115


    RDS(ON) mΩ
    Resistance1 VGS = 10V, ID = 6A 48 85
    Forward Transconductance1 gfs VDS = 15V, ID = 6A 16 S

    1 Jun-29-2004
    NIKO-SEM N-Channel Logic Level Enhancement P3057LCG
    Mode Field Effect Transistor SOT-89
    Lead-Free

    DYNAMIC
    Input Capacitance Ciss 450
    Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 200 pF
    Reverse Transfer Capacitance Crss 60
    2
    Total Gate Charge Qg 15
    Gate-Source Charge 2
    Qgs VDS = 0.5V(BR)DSS, VGS = 10V, 2.0 nC
    Gate-Drain Charge 2
    Qgd ID = 6A 7.0
    2
    Turn-On Delay Time td(on) 6.0
    Rise Time2 tr VDS = 15V, RL = 1Ω 6.0
    nS
    Turn-Off Delay Time2 td(off) ID ≅ 12A, VGS = 10V, RGS = 2.5Ω 20

    Fall Time2 tf 5.0


    SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
    Continuous Current IS 2.3
    A
    Pulsed Current3 ISM 4
    Forward Voltage1 VSD IF = IS, VGS = 0V 1.5 V
    1
    Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%.
    2
    Independent of operating temperature.
    3
    Pulse width limited by maximum junction temperature.

    REMARK: THE PRODUCT MARKED WITH “P3057G”, DATE CODE or LOT #


    Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.

    2 Jun-29-2004
    NIKO-SEM N-Channel Logic Level Enhancement P3057LCG
    Mode Field Effect Transistor SOT-89
    Lead-Free

    3 Jun-29-2004
    NIKO-SEM N-Channel Logic Level Enhancement P3057LCG
    Mode Field Effect Transistor SOT-89
    Lead-Free

    SOT-89 MECHANICAL DATA

    mm mm
    Dimension Dimension
    Min. Typ. Max. Min. Typ. Max.

    A 4.3 4.5 4.7 H 1.4 1.5 1.6

    B 1.6 1.7 1.8 I 2.8 3.0 3.2

    C 0.4 0.5 0.6 J 1.3 1.5 1.7

    D 2.4 2.5 2.6 K 3.8 4.2 4.6

    E 0.8 1.2 1.4 L 0.3 0.4 0.5

    F 0.4 0.45 0.5 M

    G 0.4 0.5 0.6 N

    4 Jun-29-2004

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