IAUC50N08S5L096

™
OptiMOS -5 Power Transistor
Product Summary

VDS 80 V
Features
• OptiMOS™ power MOSFET for automotive applications RDS(on),max 9.6 mW

• N-channel - Enhancement mode - Logic Level ID 50 A

• MSL1 up to 260°C peak reflow PG-TDSON-8-33

• 175 °C operating temperature

• Green product (RoHS compliant)
• 100% Avalanche tested
1

Type Package Marking

IAUC50N08S5L096 PG-TDSON-8-33 5N08L096

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter Symbol Conditions Value Unit

V GS=10 V, Chip
Drain current ID 50 A
limitation1,2)

V GS=10V, DC current 50

T a=85 °C, V GS=10 V,

16
RthJA on 2s2p 2,3)
Pulsed drain current2) I D,pulse T C=25 °C 200

Avalanche energy, single pulse2) E AS I D=29 A 45 mJ

Avalanche current, single pulse I AS - 29 A

Gate source voltage V GS - ±20 V

Power dissipation P tot T C=25 °C 60 W

Operating and storage temperature T j, T stg - -55 ... +175 °C

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Parameter Symbol Conditions Values Unit

min. typ. max.

Thermal characteristics2)

Thermal resistance, junction - case R thJC - - - 2.5 K/W

Thermal resistance, junction -

R thJA - - 24.9 -
ambient4)

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V (BR)DSS V GS=0V, I D=1mA 80 - - V

Gate threshold voltage V GS(th) V DS=V GS, I D=24 µA 1.2 1.6 2.0

V DS=80V, V GS=0V,
Zero gate voltage drain current I DSS - 0.1 1 µA
T j=25°C

V DS=80V, V GS=0V,
- 1 20
T j=85°C2)

Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA

Drain-source on-state resistance R DS(on) V GS=4.5V, I D=25A - 10.3 13.9 mW

V GS=10V, I D=25A - 7.8 9.6

Gate resistance2) RG - - 1.2 - W

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 IAUC50N08S5L096

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic characteristics2)

Input capacitance C iss - 1295 1684 pF

V GS=0V, V DS=40V,
Output capacitance C oss - 212 276
f =1MHz
Reverse transfer capacitance Crss - 15 23

Turn-on delay time t d(on) - 3 - ns

Turn-off delay time t d(off) V DD=40V, V GS=10V, - 14 -

tr I D=25A, R G,ext=3.5W
Rise time - 2 -

Fall time tf - 6 -

Gate Charge Characteristics2)

Gate to source charge Q gs - 4 6 nC

Gate to drain charge Q gd V DD=40V, I D=25A, - 5 7

Qg V GS=0 to 10V
Gate charge total - 22 29

Gate plateau voltage V plateau - 3.1 - V

Reverse Diode

Diode continous forward current2) IS T C=25°C - - 50 A

Diode pulse current2) I S,pulse T C=25 °C - - 200

V GS=0V, I F=25 A,
Diode forward voltage V SD - 0.9 1.2 V
T j=25°C

Reverse recovery time2) t rr V R=40V, I F=50A, - 33 - ns

di F/dt =100A/µs
Reverse recovery charge2) Q rr - 26 - nC
1)
Practically the current is limited by the overall system design including the customer-specific PCB.
2)
The parameter is not subject to production test - verified by design/characterization.
3)
Device on a four-layer 2s2p FR4 PCB defined in accordance with JEDEC standards (JESD51-5-7). PCB is vertical in
still air.

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 IAUC50N08S5L096

1 Power dissipation 2 Drain current

P tot = f(T C); V GS = 10 V I D = f(T C); V GS = 10 V

70 60

60
50

50
40

40
Ptot [W]

ID [A]
30

30

20
20

10
10

0 0
0 50 100 150 200 0 50 100 150 200

TC [°C] TC [°C]

3 Safe operating area 4 Max. transient thermal impedance

I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p)
parameter: t p parameter: D =t p/T
1000
101

0.5
1 µs 100
100
10 µs 0.1
ZthJC [K/W]

0.05
ID [A]

100 µs
10-1
0.01

150 µs

10
single pulse

10-2

1 10-3
0.1 1 10 100 10-6 10-5 10-4 10-3 10-2 10-1 100
VDS [V] tp [s]

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5 Typ. output characteristics 6 Typ. drain-source on-state resistance

I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C
parameter: V GS parameter: V GS

200 30
5V

160 25

6V
4.5 V

120 10 V 20

RDS(on) [mW]
ID [A]

80 4V
15
4V

4.5 V 5V

40 10 6V

10 V

0 5
0 1 2 3 4 5 6 0 40 80 120 160 200
VDS [V] ID [A]

7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance

I D = f(V GS); V DS = 6V R DS(on) = f(T j);
parameter: T j parameter: ID, VGS

200 24

180 -55 °C 22

160 25 °C 20

140 18
VGS=4.5V, ID=25A
120 175 °C 16
RDS(on) [mW]
ID [A]

100 14

80 12

60 10

40 8
VGS=10V, ID=25A
20 6

0 4
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 -60 -20 20 60 100 140 180
VGS [V]
Tj [°C]

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 IAUC50N08S5L096

9 Typ. gate threshold voltage 10 Typ. capacitances

V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D

2.5 104

2
Ciss

103

C [pF]
240 µA

1.5
VGS(th) [V]

24 µA
Coss

102

0.5

Crss

0
-60 -20 20 60 100 140 180 0 20 40 60 80

Tj [°C] VDS [V]

11 Typical forward diode characteristics 12 Avalanche characteristics

IF = f(VSD) I AS= f(t AV)
parameter: T j parameter: Tj(start)

103 100

102

25 °C
IAV [A]
IF [A]

10
100 °C
150 °C

101
175 °C 25 °C

100 1
0 0.2 0.4 0.6 0.8 1 1.2 0.1 1 10 100 1000
VSD [V] tAV [µs]

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13 Avalanche energy 14 Drain-source breakdown voltage

E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA
parameter: I D

200 88

86
160

7.5 A
84

120

VBR(DSS) [V]
EAS [mJ]

82

80 15 A
80

40 29 A
78

0 76
25 75 125 175 -60 -20 20 60 100 140 180

Tj [°C] Tj [°C]

15 Typ. gate charge 16 Gate charge waveforms

V GS = f(Q gate); I D = 25 A pulsed
parameter: V DD

10
V GS
9 16 V
Qg
8 40 V

7 64V

6
VGS [V]

4
V gs(th)
3

1
Q g(th) Q sw Q gate
0
0 4 8 12 16 20 24
Q gs Q gd
Qgate [nC]

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Package Outline

Footprint

Packaging

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Published by
Infineon Technologies AG
81726 Munich, Germany

© Infineon Technologies AG 2021

All Rights Reserved.

Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.

Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).

Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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 IAUC50N08S5L096

Revision History

Version Date Changes

Revision 1.0 2021-05-14 Final Data Sheet

- Company log size adjusted
Revision 1.1 2021-06-18 - Datasheet file neme updated

Rev. 1.1 page 10 2021-06-18