Nothing Special   »   [go: up one dir, main page]
Scribd Logo
Upload

Welcome to Scribd!

  • 31 views

    Semihow KSH13009AL

    Uploaded by

    douglas campos
    This document summarizes the specifications and characteristics of the KSH13009AL NPN silicon power transistor. The transistor is suitable for switching regulator and inverter applications with a maximum collector current of 12 amps. Key specifications include a collector-emitter voltage rating of 400V, collector dissipation of 130W, and current gain bandwidth product of 4MHz. Electrical characteristics like saturation voltage, storage time, and turn-on time are also provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Semihow KSH13009AL

    Uploaded by

    douglas campos
    31 views5 pages
    This document summarizes the specifications and characteristics of the KSH13009AL NPN silicon power transistor. The transistor is suitable for switching regulator and inverter applications with a maximum collector current of 12 amps. Key specifications include a collector-emitter voltage rating of 400V, collector dissipation of 130W, and current gain bandwidth product of 4MHz. Electrical characteristics like saturation voltage, storage time, and turn-on time are also provided.

    Original Description:

    Original Title

    Semihow-KSH13009AL

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document summarizes the specifications and characteristics of the KSH13009AL NPN silicon power transistor. The transistor is suitable for switching regulator and inverter applications with a maximum collector current of 12 amps. Key specifications include a collector-emitter voltage rating of 400V, collector dissipation of 130W, and current gain bandwidth product of 4MHz. Electrical characteristics like saturation voltage, storage time, and turn-on time are also provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    31 views5 pages

    Semihow KSH13009AL

    Uploaded by

    douglas campos
    This document summarizes the specifications and characteristics of the KSH13009AL NPN silicon power transistor. The transistor is suitable for switching regulator and inverter applications with a maximum collector current of 12 amps. Key specifications include a collector-emitter voltage rating of 400V, collector dissipation of 130W, and current gain bandwidth product of 4MHz. Electrical characteristics like saturation voltage, storage time, and turn-on time are also provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 5

    KSH130

    009AL
    KSH13009AL

    ◎ SEMIHOW REV.A1,Oct 2007


    KSH130
    009AL
    KSH13009AL

    Switch Mode series NPN silicon Power Transistor


    - High voltage, high speed power switching
    - Suitable for switching regulator, inverters motor controls

    12 Amperes
    NPN Silicon Power Transistor
    Absolute Maximum Ratings TC=25℃ unless otherwise noted 100 Watts
    CHARACTERISTICS SYMBOL RATING UNIT TO-3P
    1. Base
    2. Collector
    Collector-Base Voltage VCBO 700 V 3. Emitter
    Collector-Emitter
    Collector Emitter Voltage VCEO 400 V
    Emitter-Base Voltage VEBO 9 V
    Collector Current(DC) IC 12 A
    Collector Current(Pulse) ICP 24 A
    Base Current IB 6 A
    Collector Dissipation(Tc=25℃) PC 130 W
    Junction Temperature TJ 150 ℃ 12
    3
    Storage Temperature TSTG -65~150 ℃

    Electrical Characteristics TC=25℃ unless otherwise noted


    CHARACTERISTICS SYMBOL Test Condition Min Typ. Max Unit

    Collector-Emitter Sustaining Voltage VCEO(sus) IC=10mA, IB=0 400 V

    Emitter Cut-off Current IEBO VEB=9V,IC=0 1 ㎃

    *DC Current Gain hFE1 VCE=5V,IC=5A 8 40


    hFE2 VCE=5V,I
    , C=8A 6 30

    *Collector-Emitter Saturation Voltage VCE(sat) IC=5A,IB=1A 1 V


    IC=8A,IB=1.6A 1.5 V
    IC=12A,IB=3A 3 V

    *Base-Emitter Saturation Voltage VBE(sat) IC=5A,IB=1A 1.2 V


    IC=8A,IB=1.6A 1.6 V

    Output Capacitance Cob VCB=10V, f=0.1MHz 180 ㎊

    Current Gain Bandwidth Product fT VCE=10V,IC=0.5A 4 ㎒

    Turn on Time ton 1.1 ㎲


    Vcc=125V, Ic=8A
    Storage Time tstg IB1=1.6A, IB2= -1.6A 3 ㎲
    RL=15.6Ω
    Fall Time tF 0.7 ㎲
    * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
    Note. Package Mark information.
    R 8 ~ 17 S SemiHow Symbol
    S
    hFE1 O 15 ~ 28 YWW Z YWW Y; year code, WW; week code
    Classification KSH13009AL
    26 ~ 39 Z hFE1 Classification
    Y
    Y1(26~33), Y2(31~39)

    ◎ SEMIHOW REV.A1,Oct 2007


    KSH130
    009AL
    Typical Characteristics

    ◎ SEMIHOW REV.A1,Oct 2007


    KSH130
    009AL
    Typical Characteristics ( Continued )

    ◎ SEMIHOW REV.A1,Oct 2007


    KSH130
    Package Dimension

    009AL
    TO-
    TO-3P

    15.6±0.20 4.8±0.20
    13.6±0.20 0
    9.6±0.20 ± 0.2 1.5±0.20
    .2
    φ3
    19.9±0.20

    18.7±0.20
    14.9±0.20
    13.9±0.20

    1.4±0.20
    3±0.20
    3.5±0.20

    2±0.20
    16.5±0.20

    1±0.20

    5.45typ 0.6±0.20

    5.45typ

    Dimensions in Millimeters

    ◎ SEMIHOW REV.A1,Oct 2007

    You might also like