STB80NF10

STP80NF10
N-channel 100 V, 0.012 Ω, 80 A, TO-220, D2PAK
low gate charge STripFET™ II Power MOSFET

Features
RDS(on)
Type VDSS ID
max
STP80NF10 100 V < 0.015 Ω 80 A
STB80NF10 100 V < 0.015 Ω 80 A

■ Exceptional dv/dt capability 3 3

2 1
1
■ 100% Avalanche tested
■ Application oriented characterization TO-220 D²PAK

Applications
■ Switching applications

Description Figure 1. Internal schematic diagram

This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters for telecom
and computer application. It is also intended for
any application with low gate charge drive
requirements.

Table 1. Device summary

Order codes Marking Package Packaging

STP80NF10 P80NF10@ TO-220 Tube

STB80NF10T4 B80NF10@ D²PAK Tape and reel

April 2009 Doc ID 6958 Rev 18 1/14

www.st.com 14
Contents STB80NF10, STP80NF10

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 5

3 Test circuit ................................................ 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

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STB80NF10, STP80NF10 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage (VGS = 0) 100 V

VGS Gate- source voltage ±20 V
ID(1) Drain current (continuous) at TC = 25 °C 80 A
ID (1) Drain current (continuous) at TC = 100 °C 80 A
(2)
IDM Drain current (pulsed) 320 A
PTOT Total dissipation at TC = 25 °C 300 W
Derating factor 2 W/°C
dv/dt (3) Peak diode recovery voltage slope 7 V/ns
EAS(4) Single pulse avalanche energy 350 mJ
Tstg Storage temperature
-55 to 175 °C
Tj Operating junction temperature
1. Limited by package
2. Pulse width limited by safe operating area
3. ISD < 80 A, di/dt < 300 A/µs, VDD= 80% V(BR)DSS
4. Starting Tj = 25 °C, ID = 40 A, VDD = 50 V

Table 3. Thermal resistance

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case max 0.5 °C/W

Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W
Tl Maximum lead temperature for soldering purpose 300 °C

Doc ID 6958 Rev 18 3/14

Electrical characteristics STB80NF10, STP80NF10

2 Electrical characteristics

(TCASE=25 °C unless otherwise specified)

Table 4. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source
V(BR)DSS ID = 250 µA, VGS = 0 100 V
breakdown voltage
Zero gate voltage VDS = Max rating 500 nA
IDSS
drain current (VGS = 0) VDS = Max rating @125°C 10 µA
Gate-body leakage
IGSS VGS = ±20 V ±100 nA
current (VDS = 0)
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V
Static drain-source on
RDS(on) VGS = 10 V, ID = 40 A 0.012 0.015 Ω
resistance

Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

gfs (1) Forward transconductance VDS = 25 V , ID =40 A - 50 S

Input capacitance
Ciss 5500 pF
Output capacitance VDS = 25 V, f = 1 MHz,
Coss - 700 pF
Reverse transfer VGS = 0
Crss 175 pF
capacitance
Qg Total gate charge 135 182 nC
VDD = 50 V, ID = 80 A,
Qgs Gate-source charge - 23 nC
VGS = 10 V
Qgd Gate-drain charge 51.3 nC
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time 26 ns

VDD = 50 V, ID= 40 A,
tr Rise time 80 ns
RG = 4.7 Ω, VGS=10 V - -
td(off) Turn-off-delay time 116 ns
(see Figure 15)
tf Fall time 60 ns

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STB80NF10, STP80NF10 Electrical characteristics

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max Unit

ISD Source-drain current - 80 A

(1)
ISDM Source-drain current (pulsed) - 320 A
VSD (2)
Forward on voltage ISD = 80 A, VGS = 0 - 1.3 V
trr Reverse recovery time ISD=80 A, VDD = 50 V 106 ns
Qrr Reverse recovery charge di/dt = 100 A/µs, - 450 nC
IRRM Reverse recovery current Tj=150 °C 8.5 A
1. Pulse width limited by safe operating area
2. Pulse duration=300µs, duty cycle 1.5%

Doc ID 6958 Rev 18 5/14

Electrical characteristics STB80NF10, STP80NF10

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Transconductance Figure 7. Static drain-source on resistance

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STB80NF10, STP80NF10 Electrical characteristics

Figure 8. Gate charge vs. gate-source voltage Figure 9. Capacitance variations

Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs.
vs. temperature temperature

Figure 12. Source-drain diode forward

characteristics

Doc ID 6958 Rev 18 7/14

Test circuits STB80NF10, STP80NF10

3 Test circuits

Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit
resistive load
VDD

12V 47kΩ
1kΩ
100nF
RL 2200 3.3
µF µF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS 2200
RG D.U.T. µF 2.7kΩ VG

PW
47kΩ

PW 1kΩ
AM01468v1 AM01469v1

Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test
switching and diode recovery times circuit

L
A A A
D
FAST L=100µH VD
G D.U.T. DIODE 2200 3.3
µF µF VDD
S B 3.3 1000
B B µF µF
25 Ω VDD ID
D

RG S
Vi D.U.T.

Pw
AM01470v1 AM01471v1

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

V(BR)DSS ton toff

tr tdoff tf
VD tdon

90% 90%
IDM
10%
ID 10% VDS
0

VDD VDD 90%

VGS

AM01472v1 0 10% AM01473v1

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STB80NF10, STP80NF10 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.

Doc ID 6958 Rev 18 9/14

Package mechanical data STB80NF10, STP80NF10

TO-220 mechanical data

mm inch
Dim
Min Typ Max Min Typ Max
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.14 1.70 0.044 0.066
c 0.48 0.70 0.019 0.027
D 15.25 15.75 0.6 0.62
D1 1.27 0.050
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.051
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
∅P 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116

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STB80NF10, STP80NF10 Package mechanical data

D²PAK (TO-263) mechanical data

mm inch
Dim
Min Typ Max Min Typ Max
A 4.40 4.60 0.173 0.181
A1 0.03 0.23 0.001 0.009
b 0.70 0.93 0.027 0.037
b2 1.14 1.70 0.045 0.067
c 0.45 0.60 0.017 0.024
c2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 7.50 0.295
E 10 10.40 0.394 0.409
E1 8.50 0.334
e 2.54 0.1
e1 4.88 5.28 0.192 0.208
H 15 15.85 0.590 0.624
J1 2.49 2.69 0.099 0.106
L 2.29 2.79 0.090 0.110
L1 1.27 1.40 0.05 0.055
L2 1.30 1.75 0.051 0.069
R 0.4 0.016
V2 0° 8° 0° 8°

0079457_M

Doc ID 6958 Rev 18 11/14

Packaging mechanical data STB80NF10, STP80NF10

5 Packaging mechanical data

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA

mm inch
DIM.
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197

TAPE MECHANICAL DATA BASE QTY BULK QTY

1000 1000
mm inch
DIM.
MIN. MAX. MIN. MAX.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
* on sales type

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STB80NF10, STP80NF10 Revision history

6 Revision history

Table 8. Document revision history

Date Revision Changes

04-Nov-2003 8 New datasheet according to PCN DSG-TRA/03/382

13-Dec-2004 9 D²PAK inserted
16-Dec-2004 10 @ inserted in table 2 for TO-220 marking
27-Jan-2005 11 New value in table 3
22-Feb-2005 12 Id value changed
28-Feb-2005 13 New value in table 3
01-Mar-2005 14 Vgs value changed
06-Apr-2006 15 The document has been reformatted
25-Jan-2007 16 Typo mistake on page 1 (order codes)
17-Nov-2008 17 EAS value has been updated
15-Apr-2009 18 IDSS value changed in Table 4: On/off states

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 STB80NF10, STP80NF10

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