JSSC 1986 1052568
JSSC 1986 1052568
JSSC 1986 1052568
4,AUGUST 1986
I. INTRODUCTION
.
210
cies, however, charge storage in the quad devices and the values of r~ are assumed for the two devices. The large-sig-
influence of their base resistances causes significant distor- nal input capacitance Cmrepresents charge storage in the
tion in ~the ideal mixing process. The most important device due to emitter-base depletion capacitance CJ, and
manifestation of this is the creation of third-order inter- base charging capacitance so that
modulation products in the converted output signal.
In this paper the mechanisms of intermodulation crea- (1)
tion in the basic mixer of Fig. 1 are examined, and
methods are derived for estimating distortion from device dIcz dVz
parameters and signal levels. I~z=~l— + cJe
—dt . (2)
dt
lQ lQ \ ‘T ‘Q I
where
A = tiorlrbIQ/V~ (11)
Assuming a sinusoidal local oscillator waveform VO=
in (7) we find
Vo~ cos Uot and normalizing time to t‘= LJo,( B = LJoCJeVT/IQ (12)
C = uorbCJ,. (13)
d
~
H~
ICI IQ
dependent on factors uo~l and C and further that the
functional dependence on the remaining variables of IM3
in the output current can be approximately expressed as
+ C,erbuo~ : —
in — — + in — ;:2 . (8)
() IQ IC2
Substituting (l)–(4) in (6) we find
WoC,eVT /10
A ,’-2 ,0-1
-40 ‘0”3 1 I *
rb =0
Is.M/lo =02
I;M/Io=o.2 -50
VOM = 500 mV
-70 ~~
IM3 ---- --,* IM3 -60
---G- ______ ----- (dB)
(OB)
I -70
t t
Fig. 3. Computed values of IM3 versus normalized local oscillator Fig. 5. Computed valued of IM3 versus q&VT/ZQ with rb = O, Vo~
voltage amplitude with C,, = Oand l~~/IQ ==0.2. = 500 mV, and l~~/IQ = 0.2.
[7”
effectively add directly to C,, of Q1–QA. Equations (8) and
-65 (9) indicate that the factor aO<,V~/lQ is now the only
factor affecting the nonlinear behavior of the circuit and
IM3 -70 this has been verified by computer simulation. Computed
(dB)
values of IllJ in the mixer versus LOOCJeV~/IQ with rb = O,
-75 l~~/ZQ = 0.2, and VOM= 500 mV are shown in Fig. 5.
Simulations of typical quad mixers with complete device
-80 c,, =0 models (including all parasitic and allowing CJ= to vary
l~f.4/I,3=02
V’M=500 mV with V~E) yield values of IlfJ that are usually close to the
-85
result obtained by simply adding the distortion products
due to the two mechanisms, as represented by (14). Thus
Fig. 4. Computed values of !fM3 versus LOo~eVT/IQ with ~e = O, Vo~
= 500 mV, and l~~/IQ = 0.2. in any particular application the designer can estimate in
advance whether a given circuit can meet a desired lkf~
specification. Appropriate and necessary bias levels can be
@O~lr#~/ VT together with local oscillator drive VoM/ VT estimated and, if necessary, alternative fabrication
and signal input i, /lQ determines the nonlinear behavior. processes giving more favorable combinations of device
Simulated values of IM3 as a function of VoM/V~ for two parameters can be proposed.
different values of uorlrbIQ/V~ with ~,= O and l~~/IQ
= 0.2 are shown in Fig. 3. Note that for low values of IV. MEASUREMENTS
VCM/V~, W increases as Vo~/V~ decreases because the
quad transistors spend more time per cycle in the state Measurements were made on a monolithic quad mixer
where all four are on and thus generate higher distortion. using R ~ = 200 0 external to the chip. This was sufficient
The physical origins of the increase in IA43for large values to make distortion due to Q5, Q6 negligible at the current
of Vo~/ VT are not known but this effect is seen in both levels used. The output was taken single ended from one
computed and measured data. Simulations with ~1 and/or common collector driving a 50-Ki load. Device parameters
rb equal to zero gave lkf~ near – 100 dB with numerical were rb = 35 Q, Cj,O= 2.4 pF, CICO = 0.86 pF, and 71= 320
limitations becoming apparent. The value of the parameter ps. (For frequencies ~.= 100 MHz, j~l = 99 MHz, and
tio~l in (9) had almost no effeet on the simulated distor- f.z = 98.9 MHz, measured and computed values of Ikfs are
tion. Simulated values of 1143 versus uO~lrJ~/ VT with shown in Figs. 6 and 7.) The computation was performed
Cj, = O, l~~/IQ = 0.2, and Vo~ = 500 mV are plotted in with the full device model and examination showed that
Fig. 4. both distortion mechanisms considered previously were
The second major source of nonlinearity in the mixer is contributing significantly. The overall agreement between
the depletion capacitance Cje. Simulations show that the computed and measured values is reasonably close and
distortion produced by C,, is essentially independent of indicates that the major distortion sources and mecha-
both the value of rl and of rb. This is similar to the nisms in the circuit have been adequately modeled.
situation in a common-base amplifier at high frequencies. As an example of the use of Figs. 4 and 5, consider lkf~
Note that in the mixer, when the quad devices are conduct- in the test circuit for Vo~ = 500 rnV, 1~~ = ().8 ti, and
ing they act as common-base stages so that this result is IQ= 4.2 mA. The total predicted distortion from Fig. 7 is
plausible. This result indicates that the term in (8) which 1A43= – 58 dB. The value of aO~lrbIQ/V~ = 1.14 and Fig.
MEYER:1NTERMODULATION
IN BIPOLARTRANSISTOR
MIXERS 537
1
— Computed curve
. Measured pomis
V. CONCLUSIONS
-50
IM3
Intermodulation in bipolar-transistor integrated-circuit
(d El)
●
mixers has been analyzed theoretically and shown to de-
-60 ●
pend on a relatively few normalized parameters. This has
11 VOM= 280 mV been verified by computer simulation. The analysis and
●
lSM:08 mA computer simulation were able to successfully predict the
-70
fo : IOOMHZ
f~, : 99 MHZ magnitude and parameter dependence of intermodulation
t
fs2. 989 MHz in an experimental monolithic quad mixer.
Fig. 6. Computed and measured values of ZM3 versus bias current for a
monolithic quad mixer.
ACKNOWLEDGMENT
v~(volts)
~i The author wishes to acknowledge reviewer’s comments
o 01 02 03 04 05 06 0.7 08
-40 1 , 1 I I I 1 lr---%Q& which significantly improved the paper.
— Computed curve
IM3
(d8)
-50
I ●
. Meosured po!nts
●
REFERENCES
I
●
IsM=08mA
[3] R. G. Meyer,“Integratedcircuitmixersflin IEEE NEREM Rec.,
IQ =42mA VO1. 12, 1970, pp. 62–63.
-70 [4] C. Yamada et al., “A 470 Mf-Iz 5V CATV tuner,” in IEEE ISSCC
Dig., Feb. 1985, pp. 28-29.
t
[5] E. H. Nordholt, H. C. Nauta, and C. A. M. Boo:, “A high-
Fig. 7. Computed and measured values of IM3 versus local oscillator dynamic-range front end for an up-conversion car-racho receiver:
voltage for a monolithic quad mixer. IEEE J. Solid-State Circuits, vol. SC-20, no. 3, pp. 688-696, June
1985,
[6] W. M. C. Sansen and R. G. Meyer, ” Distortion in bipolar-transistor
variable-gain amplifiers,” IEEE J. Solid-State Circuits, vol. SC-8, no.
4 predicts IM3 due to rb is – 65 dB when Z~~/IQ = 0.19. 4, pp. 275-282, Aug. 1973.
The effective value of C,, at the operating point is 4.1 pF,
giving uOC,,V~/IQ = 0.016, and from Fig. 5 IM~ due to Cjt
is – 62 dB. When these values of IM3 are directly added Robert G. Meyer (S’64-M68-SM’74- F’81), for photograph and biogra-
the result is – 57.4 dB, which is very close to the value phy please see this issue, p. 533.