<Silicon RF Power Modules >

RA30H3340M
RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO

DESCRIPTION BLOCK DIAGRAM

The RA30H3340M is a 30-watt RF MOSFET Amplifier Module for
12.5-volt mobile radios that operate in the 330- to 400-MHz range. 2 3
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage
(VGG=0V), only a small leakage current flows into the drain and the RF
input signal attenuates up to 60 dB. The output power and drain current
1 4
increase as the gate voltage increases. With a gate voltage around
4.0V (minimum), output power and drain current increases substantially. 5

The nominal output power becomes available at 4.5V (typical) and 5V

(maximum). At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be
used for linear modulation by setting the drain quiescent current with
the gate voltage and controlling the output power with the input power. 1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
FEATURES 3 Drain Voltage (VDD), Battery
• Enhancement-Mode MOSFET Transistors 4 RF Output (Pout)
(IDD0 @ VDD=12.5V, VGG=0V)
5 RF Ground (Case)
• Pout>30W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 330-400MHz
PACKAGE CODE: H2S
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• 66 x 21 x 9.8 mm
• Linear operation is possible by setting the quiescent drain current with
the gate voltage and controlling the output power with the input power

RoHS COMPLIANCE
• RA30H3340M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in
electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent
tubes.
2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

ORDER NUMBER SUPPLY FORM

Antistatic tray,
RA30H3340M-101
10 modules/tray

Publication Date : Jul.2011

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<Silicon RF Power Modules >

RA30H3340M
RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO

MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)

SYMBOL PARAMETER CONDITIONS RATING UNIT
VDD Drain Voltage VGG<5V 17 V
VGG Gate Voltage VDD<12.5V, Pin=0mW 6 V
Pin Input Power 100 mW
f=330-400MHz,
Pout Output Power 45 W
ZG=ZL=50
Tcase(OP) Operation Case Temperature Range -30 to +110 °C
Tstg Storage Temperature Range -40 to +110 °C

The above parameters are independently guaranteed.

ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

f Frequency Range 330 - 400 MHz
Pout Output Power 30 - - W
T Total Efficiency VDD=12.5V, 40 - - %
nd
2fo 2 Harmonic VGG=5V, - - -25 dBc
in Input VSWR Pin=50mW - - 3:1 —
IGG Gate Current - 1 - mA
VDD=10.0-15.2V, Pin=25-70mW,
— Stability No parasitic oscillation —
Pout<40W (VGG control), Load VSWR=3:1
VDD=15.2V, Pin=50mW, Pout=30W (VGG control),
— Load VSWR Tolerance No degradation or destroy —
Load VSWR=20:1

All parameters, conditions, ratings, and limits are subject to change without notice.

Publication Date : Jul.2011

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<Silicon RF Power Modules >

RA30H3340M
RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO

TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)

OUTPUT POWER, TOTAL EFFICIENCY, OUTPUT POWER and TOTAL EFFICIENCY
and INPUT VSWR versus FREQUENCY versus INPUT POWER
60 120 50 100

OUTPUT POWER Pout (dBm)

VDD=12.5V, f ==330MHz, Pout

TOTAL EFFICIENCY ηT(%)

TOTAL EFFICIENCYηT(%)
OUTPUT POWER Pout (W)

50 VGG =5V, 100 VDD=12.5V ,

80
PouT Pin=50mW 45 VGG=5V
INPUT VSWR ρin

40 80
ηT 60
ηT
30 60 40
40
20 40
35
20
10 ρin 20

0 0 30 0
320 330 340 350 360 370 380 390 400 410 -10 -5 0 5 10 15 20
FREQUENCY f(MHz) INPUT POWER Pin(dBm)

OUTPUT POWER and EFFICIENCY OUTPUT POWER and EFFICIENCY

versus INPUT POWER versus INPUT POWER
50 100 50 100
P out
OUTPUT POWER Pout (dBm)

OUTPUT POWER Pout (dBm)

TOTAL EFFICIENCY ηT(%)

Pout
TOTAL EFFICIENCYηT(%)

80 80
45 45

ηT 60 60
ηT
40 40
40 40

35 35
f =365MHz, 20 f=400MHz, 20
VDD=12.5V , VDD=12.5V,
VGG=5V VGG=5V

30 0 30 0
-10 -5 0 5 10 15 20 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm) INPUT POWER Pin(dBm)

OUTPUT POWER and EFFICIENCY OUTPUT POWER and EFFICIENCY

versus DRAIN VOLTAGE versus GATE VOLTAGE
70 140 60 120
f =330/365/400MHz,
VGG =5V, f =330MHz,
60 120
TOTAL EFFICIENCYηT(%)

P out 50 100
OUTPUT POWER Pout (W)

VDD=12.5V,
OUTPUT POWER Pout (W)

Pin=50mW P out
Pin=50mW
TOTL EFFICIENCYηT(%)

50 100
40 80
40 80
ηT
30 ηT 60
30 60
20 40
20 40
: 330MHz
10 : 365MHz 20 10 20
- - - - - :400MHz

0 0 0 0
0 2 4 6 8 10 12 14 16 18 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
DRAIN SUPPLY VOLTAGE V DD (V) GATE VOLTAGE VGG (V)

OUTPUT POWER and EFFICIENCY OUTPUT POWER and EFFICIENCY

versus GATE VOLTAGE versus GATE VOLTAGE
60 120 60 120
f =400MHz,
f =365MHz
TOTAL EFFICIENCYηT(%)
TOTAL EFFICIENCYηT(%)

50 VDD=12.5V, 100
50 100
OUTPUT POWER Pout (W)
OUTPUT POWER Pout (W)

VDD=12.5V,
Pin=50mW
Pin=50mW P out
P out
40 80 40 80

30 Eta 60 30 60
ηT

20 40 20 40

10 20 10 20

0 0 0 0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 2 2.5 3 3.5 4 4.5 5 5.5 6
GATE VOLTAGE V GG(V) GATE VOLTAGE VGG(V)

Publication Date : Jul.2011

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<Silicon RF Power Modules >

RA30H3340M
RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO

OUTLINE DRAWING (mm)

66.0 ±0.5

60.0 ±0.5
3.0 ±0.3

7.25 ±0.8
2-R2 ±0.5
51.5 ±0.5

17.0 ±0.5
21.0 ±0.5

9.5 ±0.5

4.0 ±0.3
5
1 2 3 4
2.0 ±0.5
14.0 ±1

Ø0.45 ±0.15

12.0 ±1

16.5 ±1

43.5 ±1

55.5 ±1
3.1 +0.6/-0.4
0.09 ±0.02

7.5 ±0.5

(9.88)
2.3 ±0.3

(50.4)

1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)

Publication Date : Jul.2011

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<Silicon RF Power Modules >

RA30H3340M
RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO

TEST BLOCK DIAGRAM Power DUT Spectrum

Meter 5 Analyzer

1 2 3 4

Signal Pre- Directional ZG=50 ZL=50 Power

Attenuator
Directional
Attenuator Attenuator
Generator amplifier Coupler Coupler Meter

C1 C2

- + + -
DC Power DC Power
Supply VGG Supply VDD

C1, C2: 4700pF, 22uF in parallel

1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)

EQUIVALENT CIRCUIT

2 3

1 4

Publication Date : Jul.2011

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<Silicon RF Power Modules >

RA30H3340M
RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO

RECOMMENDATIONS and APPLICATION INFORMATION:

Construction:
This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic cap is
attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated
with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits.
Wire leads soldered onto the alumina substrate provide the DC and RF connection.
Following conditions must be avoided:
a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes)
b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)
c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene)
d) ESD, surge, overvoltage in combination with load VSWR, and oscillation
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
Heat sink flatness must be less than 50 µm (a heat sink that is not flat or particles between module and heat sink may
cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws or later
when thermal expansion forces are added).
A thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce
the bending stress on the ceramic substrate caused by the temperature difference to the heat sink.
The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.
M3 screws are recommended with a tightening torque of 4.0 to 6.0 kgf-cm.
Soldering and Defluxing:
This module is designed for manual soldering.
The leads must be soldered after the module is screwed onto the heat sink.
The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second.
Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in
the coating of the transistor chips which can lift off the bond wires).

Thermal Design of the Heat Sink:

At Pout=30W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are:
Pin Pout Rth(ch-case) IDD @ T=40% VDD
Stage (V)
(W) (W) (°C/W) (A)
st
1 0.05 1.5 29.0 0.18
nd
2 1.5 9.0 2.4 1.60 12.5
rd
3 9.0 30.0 1.2 4.20
The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are:
Tch1 = Tcase + (12.5V x 0.18A - 1.5W + 0.05W) x 29.0°C/W = Tcase + 23.2 °C
Tch2 = Tcase + (12.5V x 1.60A - 9.0W + 1.50W) x 2.4°C/W = Tcase + 30.0 °C
Tch3 = Tcase + (12.5V x 4.20A - 30.0W + 9.0W) x 1.2°C/W = Tcase + 37.8 °C
For long term reliability the module case temperature Tcase is better kept below 90°C. For an ambient temperature
Tair=60°C and Pout=30W the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / T ) - Pout + Pin ) of the heat sink,
including the contact resistance, is:
Rth(case-air) = (90°C - 60°C) / (30W/40% – 30W + 0.05W) = 0.67 °C/W
When mounting the module with the thermal resistance of 0.67 °C/W, the channel temperature of each stage transistor is:
Tch1 = Tair + 53.2 °C
Tch2 = Tair + 60.0 °C
Tch3 = Tair + 67.8 °C
175°C maximum rating for the channel temperature ensures application under derated conditions.

Publication Date : Jul.2011

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<Silicon RF Power Modules >

RA30H3340M
RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO

Output Power Control:

Depending on linearity following 2 methods are recommended to control the output power:
a) Non-linear FM modulation:
By Gate voltage VGG.
When the Gate voltage is close to zero, the RF input signal is attenuated up to 60dB and only a small leakage current is flowing
from the battery into the Drain.
Around VGG=3.5V the output power and Drain current increases strongly.
Around VGG=4.5V, latest at VGG=5V, the nominal output power becomes available.
b) Linear AM modulation:
By RF input power Pin. The Gate voltage is used to set the Drain quiescent current for the required linearity.
Oscillation:
To test RF characteristic this module is put on a fixture with 2 bias decoupling capacitors each on Gate and Drain, a 4.700pF chip
capacitor, located close to the module, and a 22µF electrolytic capacitor.
When an amplifier circuit around this module shows oscillation following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module ?
b) Is the load impedance ZL=50 ?
c) Is the source impedance ZG=50 ?

ATTENTION:
1.High Temperature; This product might have a heat generation while operation,Please take notice that have a possibility to receive a
burn to touch the operating product directly or touch the product until cold after switch off.
At the near the product,do not place the combustible material that have possibilities to arise the fire.
2. Generation of High Frequency Power; This product generate a high frequency power. Please take notice that do not leakage the
unnecessary electric wave and use this products without cause damage for human and property per normal operation.
3. Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle
for equipment.

PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES:

1.The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of
these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales
offices.
2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile
communication terminals and were not specifically designed for use in other applications.
In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality
assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications
elements. In the application, which is base station applications and fixed station applications that operate with long term continuous
transmission and a higher on-off frequency during transmitting, please consider the derating, the redundancy system, appropriate
setting of the maintain period and others as needed. For the reliability report which is described about predicted operating life time of
Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product
distributor.
3.RA series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD
precautions are required.
4.In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a
sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the case temperature for RA series
products lower than 60deg/C under standard conditions, and less than 90deg/C under extreme conditions.
5.RA series products are designed to operate into a nominal load impedance of 50 ohms. Under the condition of operating into a severe
high load VSWR approaching an open or short, an over load condition could occur. In the worst case there is risk for burn out of the
transistors and burning of other parts including the substrate in the module.
6.The formal specification includes a guarantee against parasitic oscillation under a specified maximum load mismatch condition. The
inspection for parasitic oscillation is performed on a sample basis on our manufacturing line. It is recommended that verification of no
parasitic oscillation be performed at the completed equipment level also.
7.For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the
specification sheet.
8.Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original
form.
9.For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.

Publication Date : Jul.2011

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<Silicon RF Power Modules >

RA30H3340M
RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO

Keep safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.

Notes regarding these materials

•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any
third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are subject
to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It
is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized
Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product
listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi
Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these
inaccuracies or errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means,
including the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).
•When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before making
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no responsibility for any damage, liability or other loss resulting from the information contained herein.
•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or
system that is used under circumstances in which human life is potentially at stake. Please contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when
considering the use of a product contained herein for any specific purposes, such as apparatus or systems
for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or
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Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
destination is prohibited.
•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor
for further details on these materials or the products contained therein.

© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.

Publication Date : Jul.2011
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