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Stps 10120 C

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STPS10120C

Datasheet

120 V power Schottky rectifier

A1 Features
K
A2 • High junction temperature capability
• Low leakage current
K • Good trade off between leakage current and forward voltage drop
• Avalanche capability
• ECOPACK®2 compliant

A2 Applications
K
A1
TO-220AB • Switching diode
• SMPS
• DC/DC converter
• Telecom power
• LED lighting
• Notebook adapter

Description
This dual diode common cathode Schottky rectifier is suited for high frequency
switched mode power supplies.
Packaged in TO-220AB, the STPS10120C is optimized for use to enhance the
reliability of the application.
Product status

STPS10120C

Product summary

IF(AV) 2x5A

VRRM 120 V

Tj(max.) 175 °C

VF(typ.) 0.64 V

DS13723 - Rev 2 - August 2018 www.st.com


For further information contact your local STMicroelectronics sales office.
STPS10120C
Characteristics

1 Characteristics

Table 1. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)

Symbol Parameter Value Unit

VRRM Repetitive peak reverse voltage 120 V

IF(RMS) Forward rms current 30 A

Tc = 160 °C Per diode 5


IF(AV) Average forward current, δ = 0.5, square wave A
Tc = 155 °C Per device 10

IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 120 A

PARM Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C 215 W

Tstg Storage temperature range -65 to +175 °C

Tj Maximum operating junction temperature (1) +175 °C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameters

Symbol Parameter Max. value Unit

Per diode 3.8


Rth(j-c) Junction to case °C/W
Total 2.3
Rth(c) Coupling 0.7 °C/W

When the diodes 1 and 2 are used simultaneously: ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)

For more information, please refer to the following application note :


• AN5088 : Rectifiers thermal management, handling and mounting recommendations

Table 3. Static electrical characteristics (per diode)

Symbol Parameter Test conditions Min. Typ. Max. Unit

Tj = 25 °C - 6 µA
IR (1) Reverse leakage current VR = VRRM
Tj = 125 °C - 1 3 mA

Tj = 25 °C - 0.85
IF = 5 A
Tj = 125 °C - 0.64 0.70
VF (2) Forward voltage drop V
Tj = 25 °C - 0.96
IF = 10 A
Tj = 125 °C - 0.73 0.80

1. Pulse test: tp = 5 ms, δ < 2%


2. Pulse test: tp =380 µs, δ < 2%

To evaluate the conduction losses, use the following equation: P = 0.60 x IF(AV) + 0.02 x IF 2 (RMS)
For more information, please refer to the following application notes related to the power losses :
• AN604: Calculation of conduction losses in a power rectifier
• AN4021: Calculation of reverse losses on a power diode

DS13723 - Rev 2 page 2/9


STPS10120C
Characteristics (curves)

1.1 Characteristics (curves)

Figure 2. Average forward current versus ambient


Figure 1. Average forward power dissipation versus
temperature (δ = 0.5, per diode)
average forward current (per diode)

PF(AV)(W) IF(AV)(A)
4.5 6
δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5
4.0 Rth(j-a)=Rth(j-c)
5
3.5
δ=1
3.0 4
Rth(j-a)=30° C/W
TO-220AB
2.5
3
2.0

1.5 2
T T
1.0
1
0.5 Tamb (°C)
IF(AV)(A) δ=tp/T tp δ=tp/T tp
0.0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 25 50 75 100 125 150 175

Figure 4. Relative variation of thermal impedance junction


Figure 3. Normalized avalanche power derating versus to case versus pulse duration
pulse duration (Tj = 125 °C)
Zth(j-c) /Rth(j-c)
PARM (t p ) 1.0
PARM (10 µs)
1 0.9
0.8
0.7

0.1 0.6
0.5
0.4

0.01 0.3
0.2
0.1 Single pulse
t p (s)
t p(µs) 0.0
0.001
1 10 100 1000 1.E-03 1.E-02 1.E-01 1.E+00

DS13723 - Rev 2 page 3/9


STPS10120C
Characteristics (curves)

Figure 5. Reverse leakage current versus reverse voltage Figure 6. Junction capacitance versus reverse voltage
applied (typical values, per diode) applied (typical values, per diode)

IR(µA) C(pF)
1.E+03 1000
F=1MHz
Tj=125°C VOSC=30mVRMS
Tj=25°C
1.E+02
Tj=100°C

1.E+01 Tj=75°C

100
Tj=50°C
1.E+00

Tj=25°C

1.E-01

V R (V) V R (V)
1.E-02 10
1 10 100 1000
0 10 20 30 40 50 60 70 80 90 100 110 120

Figure 7. Forward voltage drop versus forward current (per diode)

IF(A)
200

180

160

140 Tj=125°C
(maximum values)
120

100
Tj=125°C Tj=25°C
80 (typical values) (maximum values)

60

40

20 V F (V)
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6

DS13723 - Rev 2 page 4/9


STPS10120C
Package information

2 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.

2.1 Package information


• Epoxy meets UL 94,V0
• Cooling method: by conduction (C)
• Recommended torque value: 0.55 N·m
• Maximum torque value: 0.70 N·m

Figure 8. TO-220AB package outline

DS13723 - Rev 2 page 5/9


STPS10120C
TO-220AB package information

Table 4. TO-220AB package mechanical data

Dimensions

Ref. Millimeters Inches (for reference only)

Min. Max. Min. Max.

A 4.40 4.60 0.173 0.181


b 0.61 0.88 0.240 0.035
b1 1.14 1.55 0.045 0.061
c 0.48 0.70 0.019 0.028
D 15.25 15.75 0.600 0.620
D1 1.27 typ. 0.050 typ.
E 10.00 10.40 0.394 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.195 0.203
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.260
J1 2.40 2.72 0.094 0.107
L 13.00 14.00 0.512 0.551
L1 3.50 3.93 0.138 0.155
L20 16.40 typ. 0.646 typ.
L30 28.90 typ. 1.138 typ.
θP 3.75 3.85 0.148 0.152
Q 2.65 2.95 0.104 0.116

DS13723 - Rev 2 page 6/9


STPS10120C
Ordering information

3 Ordering information

Table 5. Order code

Order code Marking Package Weight Base qty. Delivery mode

STPS10120CT STPS10120CT TO-220AB 1.95 g 50 Tube

DS13723 - Rev 2 page 7/9


STPS10120C

Revision history

Table 6. Document revision history

Date Revision Changes

11-Jul-2007 1 First issue.


Updated Table 1. Absolute ratings (limiting values per diode at 25 °C, unless
otherwise specified) and Figure 3. Normalized avalanche power derating
09-Aug-2018 2 versus pulse duration (Tj = 125 °C).
Removed TO-220FP package.

DS13723 - Rev 2 page 8/9


STPS10120C

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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved

DS13723 - Rev 2 page 9/9

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