Enhancement Mode

MOSFET (N-Channel)
2N7002Z

Enhancement Mode MOSFET (N-Channel)

Features
 Low On-Resistance
 Fast Switching Speed
 Low-voltage drive SOT-23
 Easily designed drive circuits
 ESD Protected:2000V
 RoHS Compliance, Halogen Free

Mechanical Data
Case: SOT-23, Plastic Package

Terminals: Solderable per MIL-STD-202G, Method 208

Weight: 0.008 gram

Maximum Ratings @ TA=25°C unless noted otherwise

Symbol Description 2N7002Z Unit

VDSS Drain-Source Voltage 60 V

VGSS Gate-Source Voltage ±20 V

ID Drain Current Continuous 115 mA

IDP Drain Current Pulsed (Note 1) 800 mA

IDR Reverse Drain Current Continuous 115 mA

IDRP Reverse Drain Current Pulsed (Note 1) 800 mA

PD Total Power Dissipation (Note 2) 225 mW

Tch Channel Temperature 150 °C

Tstg Storage Temperature Range -55 ~ +150 °C

Note: 1. Pw ≦10 μs, Duty cycle ≦1 %.

2. When mounted on a 1x0.75x0.062 inch glass epoxy board.

TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Rev. B/CW

Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Page 1 of 8
Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415
 Enhancement Mode MOSFET (N-Channel)

2N7002Z
Electrical Characteristics @ TA=25°C unless noted otherwise
Off Characteristics

Symbol Description Min. Typ. Max. Unit Conditions

V(BR)DSS Drain-Source Breakdown Voltage 60 - - V VGS=0V, ID=10µA

IDSS Zero Gate Voltage Drain Current - - 1 μA VDS=60V, VGS=0V

IGSS Gate-Source Leakage Current - - ±10 μA VGS=±20V, VDS=0V

On Characteristics

Symbol Description Min. Typ. Max. Unit Conditions

VGS(th) Gate Threshold Voltage 1.0 1.85 2.5 V VDS=VGS, ID=250uA

- - 7.5 VGS=10V, ID=0.5A

RDS(ON)* Drain-Source On-State Resistance Ω
- - 7.5 VGS=5V, ID=0.05A

gfs* Forward Transfer Admittance 80 - - mS VDS=10V, ID=0.2A

Dynamic Characteristics

Symbol Description Min. Typ. Max. Unit Conditions

Ciss Input Capacitance - 25 50

VDS=25V, VGS=0V,
Coss Output Capacitance - 10 25 pF
f=1MHz
Crss Reverse Transfer Capacitance - 3.0 5.0

Switching Characteristics

Symbol Description Min. Typ. Max. Unit Conditions

td(on) * Turn-On Delay Time - 12 20 ID=200mA, VDD=30V,

nS VGS=10V, RL=155Ω,
td(off) * Turn-Off Delay Time - 20 30 RGS=10Ω

* Pw ≦300 μs, Duty cycle ≦1 %.

Rev. B/CW
www.taitroncomponents.com Page 2 of 8
 Enhancement Mode MOSFET (N-Channel)

2N7002Z
Typical Characteristics Curves
Fig.1- Typical Output Characteristics Fig.2- Typical Transfer Characteristics
Drain Current ID (A)

Drain Current ID (A)

Drain-Source Voltage VDS (V) Gate-Source Voltage VGS (V)

Fig.3- Gate Threshold Voltage vs. Fig.4- Static Drain-Source On-state

Channel Temperature Resistance vs. Drain Current ( I )
Gate Threshold Voltage VGS(th) (V)

On-state Resistance RDS (Ω)

Static Drain-Source

(V)

Channel Temperature Tch (°C) Drain Current ID (A)

Rev. B/CW
www.taitroncomponents.com Page 3 of 8
 Enhancement Mode MOSFET (N-Channel)

2N7002Z

Fig.5- Static Drain-Source On-state Fig.6- Static Drain-Source On-state

Resistance vs. Drain Current ( II ) Resistance vs. Gate-Source Voltage

On-state Resistance RDS (Ω)

On-state Resistance RDS (Ω)

Static Drain-Source
Static Drain-Source

Drain Current ID (A) Gate-Source Voltage VGS (V)

Fig.7- Static Drain-Source On-state Fig.8- Reverse Drain Current vs.

Resistance vs. Channel Temperature Source-Drain Voltage ( I )
Reverse Drain Current IDR (A)
On-state Resistance RDS (Ω)
Static Drain-Source

Channel Temperature Tch (°C) Source-Drain Voltage VSD (V)

Rev. B/CW
www.taitroncomponents.com Page 4 of 8
 Enhancement Mode MOSFET (N-Channel)

2N7002Z

Fig.9- Reverse Drain Current vs. Fig.10- Forward Transfer Admittance vs.
Source-Drain Voltage ( II ) Drain Current
Reverse Drain Current IDR (A)

Forward Transfer Admittance

|gfs| (S)

Source-Drain Voltage VSD (V) Drain Current ID (A)

Fig.11- Typical Capacitance vs. Fig.12- Switching Characteristics

Drain-Source Voltage (Refer Fig.13&14)
Switching Time t (ns)
Capacitance C (pF)

Drain-Source Voltage VDS (V) Drain Current ID (A)

Rev. B/CW
www.taitroncomponents.com Page 5 of 8
 Enhancement Mode MOSFET (N-Channel)

2N7002Z

Switching Characteristics Measurement Circuit

Fig.13- Switching Time Measurement Circuit Fig.14- Switching Time Waveforms

Equivalent Circuit

Rev. B/CW
www.taitroncomponents.com Page 6 of 8
 Enhancement Mode MOSFET (N-Channel)

2N7002Z

Marking Information:

X: Date Code

Dimensions in mm

SOT-23

Rev. B/CW
www.taitroncomponents.com Page 7 of 8
 Enhancement Mode MOSFET (N-Channel)

2N7002Z

How to contact us:

US HEADQUARTERS
28040 WEST HARRISON PARKAWAY, VALENCIA, CA 91355-4162
Tel: (800) TAITRON (800) 824-8766 (661) 257-6060
Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415
Email: taitron@taitroncomponents.com
Http://www.taitroncomponents.com

TAITRON COMPONENTS MEXICO, S.A .DE C.V.

BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P.
42970 MEXICO
Tel: +52-55-5560-1519
Fax: +52-55-5560-2190

TAITRON COMPONENTS INCORPORATED TAIWAN, TAIPEI

5F-2, NO. 77, SEC. 1, HSIN TAI WU ROAD, HSI-CHIH, TAIPEI HSIEN, TAIWAN R.O.C.
Tel: 886-2-2698-8878
Fax: 886-2-2698-8879

TAITRON COMPONETS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE

METROBANK PLAZA, 1160 WEST YAN’AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA
Tel: +86-21-5424-9942
Fax: +86-21-5424-9931

Rev. B/CW
www.taitroncomponents.com Page 8 of 8