SHF Communication Technologies AG

Wilhelm-von-Siemens-Str. 23D • 12277 Berlin • Germany

Phone +49 30 772051-0 • Fax +49 30 7531078

E-Mail: sales@shf-communication.com • Web: www.shf-communication.com

Datasheet
SHF P100 A
Broadband Amplifier

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Description
The SHF P100 A broadband amplifier is the RoHS compliant successor of the popular SHF
100 AP. The SHF P100 A is a two stage, wideband RF amplifier featuring flat gain and low group delay
variation. By use of proprietary monolithic microwave integrated circuits (MMICs) a 1 dB compression
point of 13 dBm and low noise figure are achieved. An internal voltage regulation protects the amplifier
against accidental reverse voltage connection and makes it robust against line voltage ripple.
In addition the amplifier is characterized by a gain control input for up to 3 dB gain reduction.

Applications
 Optical Communications, Modulator Driver
 High-Speed Pulse Experiments
 Satellite Communications
 Research and Development
 Antenna Measurements
 RF over fiber

Available Options
1
01: DC return on input (max. ±1.75 V, max. 35 mA)
1
02: Built-in bias tee on input (max. ±12 V, max. 200 mA)
1
03: DC return on output (max. ±1.75 V, max. 35 mA)
1
04: Built-in bias tee on output (max. ±12 V, max. 200 mA)
MP: Matches the phase of two amplifiers

1
The options 01 & 02 or 03 & 04 cannot be combined.
If an option is chosen, the maximum gain and the maximum output power might be reduced by up to 1 dB. The low frequency 3 dB Point might be
increased up to 60 kHz.

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Specifications - SHF P100 A
Parameter Unit Symbol Min. Typ. Max. Comment

Absolute Max Ratings

Maximum RF Input dBm Pin max 10

V 2 peak to peak voltage

DC Voltage at RF Input V ±12 AC coupled input

DC Voltage at RF Output V ±12 AC coupled output

Positive Supply Voltage V 8.5 9 12 reverse voltage protected

Positive Supply Current A IDD 0.4 0.5

Reduction by approx. 3dB
Gain Control Voltage V UGC -5 0 IGC <= 10 mA
pin open: max gain is achieved.
2
Case Temperature Tcase °C 10 45 50

2
If operated with heat sink (part of the delivery) at room temperature there is no need for additional cooling.

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 Parameter Unit Symbol Min. Typ. Max. Comment

Electrical Characteristics (At 45°C case temperature, unless otherwise specified)

High frequency 3 dB point GHz fHIGH 25

Low frequency 3 dB point kHz fLOW 30 40

Gain dB S21 17 18 non-inverting

Output Power at 1 dB dBm P01dB 13 10 MHz...17 GHz

Compression V 2.8 peak to peak voltage

Output Power at 2 dB dBm P02dB 16 10 MHz...17 GHz

Compression V 4.0 peak to peak voltage

Output Power at 3 dB dBm P03dB 17.5 10 MHz...17 GHz

Compression V 4.7 peak to peak voltage

Input Return Loss dB S11 -12 -10 < 20 GHz

Output Return Loss dB S22 -10 -9 < 20 GHz

Rise Time/Fall Time Vout ~ 4.5 V, 20 Gbps,

20%...80%
ps tr/tf 3, 4
17 Deconvoluted
3
20 Full Setup

Jitter Vout ~4.5 V, 20 Gbps

3, 4
ps JRMS 0.9 Deconvoluted
3
1.0 Full Setup

Group Delay Ripple ps ±50 2…20 GHz, 100 MHz aperture

Power Consumption W 3.6 9 V supply voltage

Mechanical Characteristics

Input Connector SMA female

Output Connector SMA female

Dimensions mm 51x40x16
excluding connectors

3
Measured with the following setup: SHF 40A BPG -> DUT (SHF P100 A) -> Agilent 86100C with 50 GHz sampling head and precision time base.
4
Calculation based on typical results of setup without DUT :

𝑡𝑟 /𝑡𝑓 𝑑𝑒𝑐𝑜𝑛𝑣𝑜𝑙𝑢𝑡𝑒𝑑 = √(𝑡𝑟 /𝑡𝑓 𝑓𝑢𝑙𝑙 2 − (𝑡𝑟 /𝑡𝑓 𝑠𝑒𝑡𝑢𝑝 𝑤/𝑜 𝐷𝑈𝑇 )2 = √(𝑡𝑟 /𝑡𝑓 𝑓𝑢𝑙𝑙 2 − 12 𝑝𝑠 2
𝑠𝑒𝑡𝑢𝑝 ) 𝑠𝑒𝑡𝑢𝑝 )

2
𝐽𝑅𝑀𝑆 𝑑𝑒𝑐𝑜𝑛𝑣𝑜𝑙𝑢𝑡𝑒𝑑 = √(𝐽𝑅𝑀𝑆 𝑓𝑢𝑙𝑙 𝑠𝑒𝑡𝑢𝑝 )2 − (𝐽𝑅𝑀𝑆 𝑠𝑒𝑡𝑢𝑝 𝑤/𝑜 𝐷𝑈𝑇 ) = √(𝐽𝑅𝑀𝑆 𝑓𝑢𝑙𝑙 𝑠𝑒𝑡𝑢𝑝 )
2 − 350 𝑓𝑠 2

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Typical S-Parameters, Group Delay and Phase Response

Aperture of group delay measurement: 100 MHz

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Typical Noise Figure
The measurement had been performed using a FSW85 Spectrum Analyzer by Rhode & Schwarz. The
noise figure defines the degradation of the signal-to-noise ratio when the signal passes the amplifier. An
ideal amplifier would amplify the noise at its input along with the signal. However, a real amplifier adds
some extra noise from its own components and degrades the signal-to-noise ratio. Please note that this
applies to small signals only. When the amplifier is used close to or in its saturation region additional non-
linear effects will impact the signal-to-noise ratio and the signal waveform.

10

7
Noise Figure [dB]

0
0 5 10 15 20 25
Frequency [GHz]

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Typical Binary Waveforms
31
Measurements at 10, 20 and 28 Gbps (PRBS 2 -1) had been performed using a SHF BPG 40 A and an
Agilent 86100C DCA with Precision Time Base Module (86107A) and 50 GHz Sampling Head (83484A).
The measurements will be part of the inspection report delivered with each particular device.

Input Signal @ 10 Gbps Output Signal @ 10 Gbps

Input Signal @ 20 Gbps Output Signal @ 20 Gbps

Input Signal @ 28 Gbps Output Signal @ 28 Gbps

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Handling Instructions
To operate the amplifier a positive supply voltage of approximately +9 V must be applied.
The gain can be adjusted by applying a voltage of 0 to -5 V. If this pin is left open, the amplifier will have
maximum gain. By reducing the gain the crossing will shift. Typical characteristics are shown in the
following diagram for an input voltage of 0.5 V with 50% crossing.

15

12

6
Gain [dB]
3

0 Crossing shift
-3 [%]
-6
0 -1 -2 -3 -4 -5
Gain Control Voltage [V]

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Typical Low Frequency Response

Typical Saturation power

Top (red): 3 dB compression;

Middle (green): 2 dB compression;
Bottom (blue): 1 dB compression

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Mechanical Drawing with Heat Sink

34.8

16.5

4.9

9.65
7.3
Opt. 04

9.5
9
7
P03dB : 18 dBm

0.4A
+9V
SHF AG Berlin

40kHz - 25GHz
SHF P100 A

40
18 dB
48360

0 ... -5V

9.5
7
Opt. 02

32.5
13.1
9.65
7.3
51

34.8

16.5

4.9

all dimensions in mm

For permanent mounting remove the heat sink from the amplifier. In that case please ensure that
adequate cooling of the amplifier is guaranteed. It is recommended to use thermal paste or a thermal gap
pad for the mounting. In order to separate the heat sink from the amplifier, remove the four screws on the
heat sink. Please note, thermal paste is used between the heat sink and the amplifier housing.

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Mechanical Drawing without Heat Sink

16.5
4.9

16
8.7
6.35
2 5

9.5
4

9
P03dB : 18 dBm

0.4A
+9V
SHF AG Berlin

40kHz - 25GHz
SHF P100 A

40
18 dB
48360

0 ... -5V

9.5
3
1

16.5
4.9
6.35
2.9

8.7
16

51
48
31

Pos. Connector
1 Input
2 Output
37

M2,5x5 (4x) 3 U (Gain Control)

GC

4 +9 V / 0.4 A
5 GND
3

all dimensions in mm

Please ensure that adequate cooling of the amplifier is guaranteed.

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User Instructions
ATTENTION!

Electrostatic sensitive GaAs FET amplifier

1. To prevent damage through static charge build up, cables should be always discharged before
connecting them to the amplifier!
2. Attach a 50 Ohm output load before supplying DC power to the amplifier!
3. The supply voltage can be taken from any regular power supply and can be connected to the supply
feed-through filter via an ON / OFF switch.
4. It make sense to use the minimum supply voltage. A higher one increases the power dissipation of the
internal voltage stabilizer.
5. Using a 3 dB or 6 dB input attenuator will result in a 6 dB or 12 dB increase of the input return loss. For
minimal degradation of amplifier rise time, these attenuators should have a bandwidth specification of
more than the amplifier bandwith.
6. High input voltages will drive the amplifier’s output stage into saturation, leading to waveform peak
clipping.
7. Saturated output voltages can only be used without damage while the amplifier is connected to a 50
Ohm precision load with a VSWR of less than 1.2 or better than 20 dB return loss.
8. While using a reflective load the output voltage has to be reduced to a safe operating level according to
the magnitudes of the reflections.
ATTENTION: At radio frequencies a capacitive load can be transformed to an inductive one through
transmission lines! With an output stage driven into saturation this may lead to the immediate
destruction of the amplifier (within a few ps)!
2
9. For the DC-connections flexible cable 0.2…0.5 mm / AWG 24…20 are recommended. A maximum
soldering temperature of 260 °C for 3 seconds is recommended for the feedthrough (positive supply
voltage and bias tees pin). The ground pin requires significantly more heat as it is connected to the solid
housing.

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