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    DIP Type Diodes: Schottky Barrier Diodes MBR20100F

    Uploaded by

    Tri Randi
    This document provides specifications for a Schottky Barrier Diode called the MBR20100F in a TO-220F package. It has a low forward voltage (VF) of 0.85V max, can operate at high junction temperatures up to 175°C, and provides high switching speeds and reliability. The absolute maximum ratings include a DC blocking voltage of 100V, forward current of 10A, and peak forward surge current of 150A. Electrical characteristics at 25°C include a reverse breakdown voltage of 100V min, forward voltage of 0.85V max at 10A, and reverse leakage current of 10uA max at 100V.

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    DIP Type Diodes: Schottky Barrier Diodes MBR20100F

    Uploaded by

    Tri Randi
    34 views2 pages
    This document provides specifications for a Schottky Barrier Diode called the MBR20100F in a TO-220F package. It has a low forward voltage (VF) of 0.85V max, can operate at high junction temperatures up to 175°C, and provides high switching speeds and reliability. The absolute maximum ratings include a DC blocking voltage of 100V, forward current of 10A, and peak forward surge current of 150A. Electrical characteristics at 25°C include a reverse breakdown voltage of 100V min, forward voltage of 0.85V max at 10A, and reverse leakage current of 10uA max at 100V.

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    Datasheet

    Original Title

    datasheet

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    This document provides specifications for a Schottky Barrier Diode called the MBR20100F in a TO-220F package. It has a low forward voltage (VF) of 0.85V max, can operate at high junction temperatures up to 175°C, and provides high switching speeds and reliability. The absolute maximum ratings include a DC blocking voltage of 100V, forward current of 10A, and peak forward surge current of 150A. Electrical characteristics at 25°C include a reverse breakdown voltage of 100V min, forward voltage of 0.85V max at 10A, and reverse leakage current of 10uA max at 100V.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    34 views2 pages

    DIP Type Diodes: Schottky Barrier Diodes MBR20100F

    Uploaded by

    Tri Randi
    This document provides specifications for a Schottky Barrier Diode called the MBR20100F in a TO-220F package. It has a low forward voltage (VF) of 0.85V max, can operate at high junction temperatures up to 175°C, and provides high switching speeds and reliability. The absolute maximum ratings include a DC blocking voltage of 100V, forward current of 10A, and peak forward surge current of 150A. Electrical characteristics at 25°C include a reverse breakdown voltage of 100V min, forward voltage of 0.85V max at 10A, and reverse leakage current of 10uA max at 100V.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    DIP Type Diodes

    Schottky Barrier Diodes


    MBR20100F
    TO-220F Unit: mm

    ±0.20
    ±0.20
    0
    ±0
    .2 2.54 ±0.20
    18 0.70 ±0.20
    3.
    φ

    ■ Features

    6.68 ±0.20
    15.87 ±0.20
    ● LOW VF.

    3.30 ±0.20
    ● High Operating Junction Temperature.

    12.42 ±0.20
    ● High Switching Speed.
    2.76 ±0.20
    ● High Reliability.
    1.47max

    9.75 ±0.20
    0.50 ±0.20
    1
    0.80 ±0.20
    2, 4 2.54typ
    2.54typ
    3

    ■ Absolute Maximum Ratings Ta = 25℃


    Parameter Symbol Rating Unit
    DC Blocking Voltage @ Ir=0.2mA VRRM 100 V
    DC Forward Current IF(AV) 10
    A
    Peak forward surge current IFSM 150
    Junction Temperature TJ 175
    ℃
    Storage temperature range Tstg -55 to 150

    ■ Electrical Characteristics Ta = 25℃


    Parameter Symbol Test Conditions Min Typ Max Unit
    Reverse breakdown voltage VRM IR= 0.2 m A 100 V
    Forward voltage VF IF= 10 A ,Tc=25℃ (Note.1) 850 mV
    Reverse voltage leakage current IR VR= 100V,Tc=25℃ (Note.1) 10 uA

    Note.1: Pulse Test: Pulse Width = 300 us, Duty Cycle ≤ 2.0%.

    1
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    DIP Type Diodes

    Schottky Barrier Diodes


    MBR20100F
    ■ Typical Characterisitics

    50 10
    IF, INSTANTANEOUS FORWARD CURRENT (AMPS)

    TJ = 150°C
    20
    125°
    C

    IR , REVERSE CURRENT (mA)


    150°
    C 1.0
    10
    125°
    C 100°
    C 100°
    C
    0.1
    5.0

    3.0
    0.01
    TJ = 25°C

    1.0 0.001
    25°
    C
    0.5
    0.0001
    0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.91.0 0 20 40 60 80 100
    vF, INSTANTANEOUS VOLTAGE (VOLTS) V R , REVERSE VOLTAGE (VOLTS)

    Figure 1. Typical Forward Voltage Per Diode Figure 2. Typical Reverse Current Per Diode

    20 20
    IF(AV), AVERAGE FORWARD CURRENT (AMPS)

    IF(AV), AVERAGE FORWARD CURRENT (AMPS)

    RATED VOLTAGE APPLIED (HEATSINK)


    dc R JC = 2°C/W R JA = 16°C/W
    (NO HEATSINK)
    15 15
    R JA = 60 °
    C/W

    SQUARE WAVE RATED VOLTAGE


    dc
    10 10 APPLIED

    dc
    5.0 5.0

    SQUARE WAVE
    0 0
    80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180
    TC , CASE TEMPERATURE (°C) TA , AMBIENT TEMPERATURE (°C)

    Figure 3. Typical Current Derating, Case, Per Leg Figure 4. Typical Current Derating, Ambient, Per Leg

    20
    IPK /IAV = 5.0
    18 TA = 25
    °
    C
    IPK /IAV =
    16
    AVERAGE POWER (WATTS)

    14 IPK /IAV = 10

    12 dc
    10
    I PK /IAV = 20
    8.0 SQUARE WAVE
    6.0
    4.0
    2.0
    0
    0 2.0 4.0 6.0 8.0 10 12 14 16 18 20
    AVERAGE CURRENT (AMPS)

    Figure 5. Average Power Dissipation and


    Average Current

    2
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