PD-95830 RevD

IRAMS10UP60B
Series
Integrated Power Hybrid IC for
Appliance Motor Drive Applications.
10A, 600V
Description with Internal Shunt Resistor
International Rectifier's IRAMS10UP60B is an Integrated Power Module developed and optimized for elec-
tronic motor control in appliance applications such as washing machines and refrigerators. Plug N Drive
technology offers an extremely compact, high performance AC motor-driver in a single isolated package for
a very simple design. An internal shunt is also included and offers easy current feedback and overcurrent
monitor for precise and safe operation. A built-in temperature monitor and over-current protection, along
with the short-circuit rated IGBTs and integrated under-voltage lockout function, deliver high level of
protection and fail-safe operation. The integration of the bootstrap diodes for the high-side driver section,
and the single polarity power supply required to drive the internal circuitry, simplify the utilization of the
module and deliver further cost reduction advantages. UL Certified.
Features
• Internal Shunt Resistor
• Integrated Gate Drivers and Bootstrap Diodes
• Temperature Monitor
• Fully Isolated Package
• Low VCE(on) Non Punch Through IGBT Technology
• Undervoltage lockout for all channels
• Matched propagation delay for all channels
• Schmitt-triggered input logic
• Cross-conduction prevention logic
• Lower di/dt gate driver for better noise
immunity
• Motor Power range 0.4~0.75kW / 85~253 Vac
• Isolation 2000VRMS /1min
• UL certificate number: E252584
Absolute Maximum Ratings
Parameter Description Value Units
VCES / VRRM IGBT/Diode Blocking Voltage 600
V
V+ Positive Bus Input Voltage 450
IO @ TC=25°C RMS Phase Current (Note 1) 10
IO @ TC=100°C RMS Phase Current (Note 1) 5 A
IO Pulsed RMS Phase Current (Note 2) 15
FPWM PWM Carrier Frequency 20 kHz
PD Power dissipation per IGBT @ TC =25°C 27 W
VISO Isolation Voltage (1min) 2000 VRMS
TJ (IGBT & Diodes) Operating Junction temperature Range -40 to +150
°C
TJ (Driver IC) Operating Junction temperature Range -40 to +150
T Mounting torque Range (M3 screw) 0.5 to 1.0 Nm
Note 1: Sinusoidal Modulation at V+=400V, TJ=150°C, FPWM=20kHz, Modulation Depth=0.8, PF=0.6, See Figure 3.
Note 2: tP<100ms; TC=25°C; FPWM=20kHz. Limited by IBUS-ITRIP, see Table "Inverter Section Electrical Characteristics"

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Absolute Maximum Ratings (Continued)
Symbol Parameter Min Max Units Conditions
Bootstrap Diode Peak Forward tP= 10ms,
IBDF --- 4.5 A
Current TJ = 150°C, TC=100°C
Bootstrap Resistor Peak Power tP=100µs, TC =100°C
PBR Peak --- 80 W
(Single Pulse) ESR / ERJ series
High side floating supply offset
VS1,2,3 VB1,2,3 - 25 VB1,2,3 +0.3 V
voltage

VB1,2,3 High side floating supply voltage -0.3 600 V

Low Side and logic fixed supply

VCC -0.3 20 V
voltage
Lower of
VIN, VEN, VITRIP Input voltage LIN, HIN, EN, ITrip -0.3 (VSS+15V) or V
VCC+0.3V

Inverter Section Electrical Characteristics @TJ= 25°C

Symbol Parameter Min Typ Max Units Conditions
Collector-to-Emitter Breakdown
V(BR)CES 600 --- --- V VIN=5V, IC=250µA
Voltage
Temperature Coefficient of VIN=5V, IC=1.0mA
∆V(BR)CES / ∆T --- 0.57 --- V/°C
Breakdown Voltage (25°C - 150°C)

Collector-to-Emitter Saturation --- 1.70 2.00 IC=5A, VCC=15V

VCE(ON) V
Voltage --- 2.00 2.40 IC=5A, VCC=15V, TJ=150°C

Zero Gate Voltage Collector --- 5 80 VIN=5V, V+=600V

ICES µA
Current --- 10 --- VIN=5V, V+=600V, TJ=150°C
--- 1.80 2.35 IC=5A
VFM Diode Forward Voltage Drop V
--- 1.30 1.70 IC=5A, TJ=150°C

Bootstrap Diode Forward Voltage -- -- 1.25 IF=1A

VBDFM V
Drop --- --- 1.10 IF=1A, TJ=150°C
RBR Bootstrap Resistor Value --- 2 --- Ω TJ=25°C

∆RBR/RBR Bootstrap Resistor Tolerance --- --- ±5 % TJ=25°C

Current Protection Threshold TJ=-40°C to 125°C
IBUS_TRIP 13.1 --- 16.4 A
(positive going) See fig. 2

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IRAMS10UP60B
Inverter Section Switching Characteristics @ TJ= 25°C
Symbol Parameter Min Typ Max Units Conditions
EON Turn-On Switching Loss --- 200 235 IC=5A, V+=400V
EOFF Turn-Off Switching Loss --- 75 100 VCC=15V, L=2mH
µJ Energy losses include "tail" and
ETOT Total Switching Loss --- 275 335
diode reverse recovery
EREC Diode Reverse Recovery energy --- 15 25
tRR Diode Reverse Recovery time --- 70 100 ns See CT1

EON Turn-On Switching Loss --- 300 360 IC=5A, V+=400V

EOFF Turn-off Switching Loss --- 135 165 VCC=15V, L=2mH, TJ=150°C
µJ Energy losses include "tail" and
ETOT Total Switching Loss --- 435 525
diode reverse recovery
EREC Diode Reverse Recovery energy --- 30 40
tRR Diode Reverse Recovery time --- 100 145 ns See CT1
+
QG Turn-On IGBT Gate Charge --- 29 44 nC IC=15A, V =400V, VGE=15V
TJ=150°C, IC=5A, VP=600V
RBSOA Reverse Bias Safe Operating Area FULL SQUARE V+= 450V
VCC=+15V to 0V See CT3

TJ=150°C, VP=600V,
SCSOA Short Circuit Safe Operating Area 10 --- --- µs V+= 360V,
VCC=+15V to 0V See CT2

TJ=150°C, VP=600V, tSC<10µs

ICSC Short Circuit Collector Current --- 47 --- A V+= 360V, VGE=15V
VCC=+15V to 0V See CT2

Recommended Operating Conditions Driver Function

The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommende conditions. All voltages are absolute referenced to COM/ITRIP. The VS offset is tested with all supplies biased
at 15V differential (Note 3)

Symbol Definition Min Max Units

VB1,2,3 High side floating supply voltage VS+12 VS+20
V
VS1,2,3 High side floating supply offset voltage Note 4 450
VCC Low side and logic fixed supply voltage 12 20
V
VITRIP ITRIP input voltage VSS VSS+5
VIN Logic input voltage LIN, HIN VSS VSS+5 V
VEN Logic input voltage EN VSS VSS+5 V
Note 3: For more details, see IR21363 data sheet
Note 4: Logic operational for Vs from COM-5V to COM+600V. Logic state held for Vs from COM-5V to COM-VBS.
(please refer to DT97-3 for more details)
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 IRAMS10UP60B
Static Electrical Characteristics Driver Function
VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to COM/ITRIP and are
applicable to all six channels. (Note 3)
Symbol Definition Min Typ Max Units
VINH , VENH Logic "0" input voltage 3.0 --- --- V
VINL , VENL Logic "1" input voltage --- --- 0.8 V
VCCUV+, VBSUV+ VCC and VBS supply undervoltage Positive going threshold 10.6 11.1 11.6 V
VCCUV-, VBSUV- VCC and VBS supply undervoltage Negative going threshold 10.4 10.9 11.4 V
VCCUVH, VBSUVH VCC and VBS supply undervoltage lock-out hysteresis --- 0.2 --- V
VIN,Clamp Input Clamp Voltage (HIN, LIN, ITRIP) IIN=10µA 4.9 5.2 5.5 V
IQBS Quiescent VBS supply current VIN=0V --- --- 165 µA
IQCC Quiescent VCC supply current VIN=0V --- --- 3.35 mA
ILK Offset Supply Leakage Current --- --- 60 µA
IIN+, IEN+ Input bias current VIN=5V --- 200 300 µA
IIN-, IEN- Input bias current VIN=0V --- 100 220 µA
ITRIP+ ITRIP bias current VITRIP=5V --- 30 100 µA
ITRIP- ITRIP bias current VITRIP=0V --- 0 1 µA
V(ITRIP) ITRIP threshold Voltage 440 490 540 mV
V(ITRIP, HYS) ITRIP Input Hysteresis --- 70 --- mV
RON,FLT Fault Output ON Resistance --- 50 100 ohm

Dynamic Electrical Characteristics

Driver only timing unless otherwise specified.)
Symbol Parameter Min Typ Max Units Conditions
Input to Output propagation turn-
TON --- 590 --- ns
on delay time (see fig.11)
VCC=VBS= 15V, IC=10A, V+=400V
Input to Output propagation turn-
TOFF --- 700 --- ns
off delay time (see fig. 11)
TFLIN Input Filter time (HIN, LIN) 100 200 --- ns VIN=0 & VIN=5V
TBLT-Trip ITRIP Blancking Time 100 150 ns VIN=0 & VIN=5V
DT Dead Time (VBS=VDD=15V) 220 290 360 ns VBS=VCC=15V
Matching Propagation Delay Time VCC= VBS= 15V, external dead
MT --- 40 75 ns
(On & Off) time> 400ns
ITrip to six switch to turn-off
TITrip --- --- 1.75 µs VCC=VBS= 15V, IC=10A, V+=400V
propagation delay (see fig. 2)
Post ITrip to six switch to turn-off --- 7.7 --- TC = 25°C
TFLT-CLR ms
clear time (see fig. 2) --- 6.7 --- TC = 100°C

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IRAMS10UP60B
Thermal and Mechanical Characteristics
Symbol Parameter Min Typ Max Units Conditions
Rth(J-C) Thermal resistance, per IGBT --- 4.2 4.7
Flat, greased surface. Heatsink
Rth(J-C) Thermal resistance, per Diode --- 5.5 6.5 °C/W compound thermal conductivity
1W/mK
Rth(C-S) Thermal resistance, C-S --- 0.1 ---
CD Creepage Distance 3.2 --- --- mm See outline Drawings

Internal Current Sensing Resistor - Shunt Characteristics

Symbol Parameter Min Typ Max Units Conditions
RShunt Resistance 33.0 33.3 33.7 mΩ TC = 25°C
TCoeff Temperature Coefficient 0 --- 200 ppm/°C
PShunt Power Dissipation --- --- 2.2 W -40°C< TC <100°C
TRange Temperature Range -40 --- 125 °C

Internal NTC - Thermistor Characteristics

Parameter Definition Min Typ Max Units Conditions
R25 Resistance 97 100 103 kΩ TC = 25°C
R125 Resistance 2.25 2.52 2.80 kΩ TC = 125°C
B B-constant (25-50°C) 4165 4250 4335 k R2 = R1e [B(1/T2 - 1/T1)]
Temperature Range -40 125 °C
Typ. Dissipation constant 1 mW/°C TC = 25°C

Input-Output Logic Level Table

V+

Ho FLT- EN ITRIP HIN1,2,3 LIN1,2,3 U,V,W

Hin1,2,3
+
1 0 0 1 V
(15,16,17) U,V,W
IC 1 0 1 0 0
(8,5,2)
Driver 1 0 1 1 Off
Lin1,2,3
1 1 X X Off
Lo
(18,19,20) 0 X X X Off

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