SEMICONDUCTOR

2N2907AS
TECHNICAL DATA

General Purpose Transistor

PNP Silicon

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT-23 package which 3
is designed for low power surface mount applications.
2
Features
1
• We declare that the material of product compliance with RoHS requirements.
SOT– 23
ORDERING INFORMATION
Device Maring †
Shipping
3
2N2907AS 2F 3000 / Tape & Ree l COLLECTOR

1
BASE
MAXIMUM RATINGS (TA = 25°C)
2
Rating Symbol Max Unit
EMITTER
Collector−Emitter Voltage VCEO -60 Vdc
Collector−Base Voltage VCBO -60 Vdc
Emitter−Base Voltage VEBO -5.0 Vdc
Collector Current − Continuous IC -600 mAdc

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation (Note 1) PD 225 mW
TA = 25°C
Thermal Resistance, R JA 556 °C/W
Junction−to−Ambient
Operating and Storage Junction TJ, Tstg −55 to +150 °C
Temperature Range

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1) V(BR)CEO -60 − Vdc
(IC = -1.0 mAdc, I B = 0)
Collector −Base Breakdown Voltage V(BR)CBO -60 − Vdc
(IC = -10 Adc, I E = 0)
Emitter −Base Breakdown Voltage V(BR)EBO -5.0 − Vdc
(IE = -10 Adc, IC = 0)
Base Current IB − -50 nAdc
(VCE = -30 Vdc, VEB = -0.5 Vdc)
Collector Cutoff Current ICEX − -50 nAdc
(VCE = -30 Vdc, VEB = -0.5 Vdc)

2008. 02. 18 Revision No : 1 1/5

 2N2907AS

ON CHARACTERISTICS
DC Current Gain HFE −
(IC = -0.1 mAdc, VCE = -10 Vdc) 75 −
(IC = -1.0 mAdc, VCE = -10 Vdc) 100 −
(IC = -10 mAdc, VCE = -10 Vdc) 100 −
(IC = -150 mAdc, VCE = -10 Vdc) 100 300
(IC = -500 mAdc, VCE = -10 Vdc) 50 −
Collector −Emitter Saturation Voltage VCE(sat) Vdc
(IC = -150 mAdc, IB = -15 mAdc) − -0.4
(IC = -500 mAdc, IB = -50 mAdc) − -1.6
Base −Emitter Saturation Voltage VBE(sat) Vdc
(IC = -150 mAdc, IB = -15 mAdc) − -1.3
(IC = -500 mAdc, IB = -50 mAdc) − -2.6

SMALL− SIGNAL CHARACTERISTICS

Current −Gain − Bandwidth Product fT 200 − MHz
(IC = -50 mAdc, VCE = 20 Vdc, f = 100 MHz)

Output Capacitance Cobo − 8.0 pF

(VCB = -10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance Cibo − 30 pF
(VEB = -2.0 Vdc, I C = 0, f = 1.0 MHz)

SWITCHING CHARACTERISTICS
Delay Time (VCC = -30 Vdc, VBE = − 0.5 Vdc, td − 10
ns
Rise Time IC = -150 mAdc, IB1 = -15 mAdc) tr − 40
Storage Time (VCC = -30 Vdc, IC = -150 mAdc, ts − 80
ns
Fall Time IB1 = IB2 = 15 mAdc) tf − 30
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width ≤300 s, Duty Cycle ≤ 2.0%.

INPUT
INPUT
Z O= 50 Ω
Z o = 50 Ω
–30 V PRF = 150 PPS +15 V
PRF = 150 PPS –6.0 V
200 RISE TIME <2.0 ns
RISE TIME <2.0 ns 1.0 k 37
P.W. < 200 ns
P.W. <200 ns
1.0 k 1.0 k
TO OSCILLOSCOPE 0 TO OSCILLOSCOPE
0
RISE TIME < 5.0 ns RISE TIME < 5.0 ns
50 50
–16 V –30 V 1N916

200 ns 200 ns

Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit

2008. 02. 18 Revision No : 1 2/5

 2N2907AS

TYPICAL CHARACTERISTICS

30
h FE , NORMALIZED CURRENT GAIN

V CE = –1 0 V
20 V CE = –10 V T J = 125°C

25°C
10

0.7 –55°C

05

03

02
–0.1 –0.2 –0.3 –0.5 –0.7 –1.0 –2 0 –3 0 –5.0 –7 0 –10 –20 –30 –50 –70 –100 –200 –300 –500

I C , COLLECTOR CURREN (mA)

Figure 3. DC Current Gain

–1 0
V CE , COLLECTOR– EMITTER

–0 8
I C = –1.0 mA –10 mA –100 mA –500 mA
VOLTAGE (VOLTS)

–0 6

–0.4

–0 2

0
–0.005–0.01 –0.02 –0 03 –0.05 –0.7 –0.1 –0.2 –0.3 –0.5 –0.7 –1.0 –2 0 –3.0 –5.0 –7.0 –10 –20 –30 –50

I B , BASE CURRENT (mA)

Figure 4. Collector Saturation Region

300 300

200 200
V CC = –30 V V CC = –30 V
I C /I B = 10 100
I C /I B = 10
100 tr
T J = 25°C tf I B1 = I B2
70 70
T J = 25°C
t, TIME (ns)
t, TIME (ns)

50 50

30 30

20 20 t ’ s = t s – 1/8 t f
t d @ V BE(off) = 0 V
10 10

7.0 70

5.0 2.0 V 50

3.0 30

–5.0–7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500 –5.0–7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500

I C , COLLECTOR CURRENT I C , COLLECTOR CURRENT (mA)

Figure 5. Turn–On Time Figure 6. Turn–Off Time

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 2N2907AS

TYPICAL SMALL–SIGNAL CHARACTERISTICS

NOISE FIGURE
V CE = 10 Vdc, T A = 25°C

10 10

f=1.0 kHz
8.0 8.0
NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

6.0 I C = –1.0 mA, R S= 430 Ω
6.0 I C = –50µA
–500 µA, R S= 560 Ω
–100 µA
–50 µA, R S= 2.7 k Ω –500 µA
4.0 –100 µA, R S= 1.6 k Ω 4.0 –1.0 mA

2.0 RS=OPT MUM SOURCE RESISTANCE 2.0

0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k

f, FREQUENCY (kHz) R S, SOURCE RESISTANCE ( Ω )

Figure 7. Frequency Effects Figure 8. Source Resistance Effects

400
f T , CURRENT– GAIN — BANDWIDTH

30
300
20 C eb
200
PRODUCT (MHz)
C, CAPACITANCE(pF)

10
100
7.0 80
VCE=–20 V
60
5.0 C cb T J= 25°C

40
3.0 30

2.0 20
–0.1 –0 2 –0.3 –0.5 –1.0 –2.0 –3.0 –5 0 –10 –20 –30 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 –1000

REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA)

Figure 9. Capacitances Figure 10. Current–Gain — Bandwidth Product

–1 0 +0.5

T J = 25°C
V BE(sat) @ I C /I B = 10 0
–0 8 R θVC for V CE(sat)
COEFFICIENT (mV/ ° C)

–0.5
V, VOLTAGE (VOLTS)

V BE(on) @ V CE = –10 V
–0 6

– 1.0

– 0.4
–1.5

–0 2
–2.0 R θVB for V BE
V CE(sat) @ I C /I B = 10
0 –2.5
–0.1 –0.2 –0 5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500

I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA)

Figure 11. “On” Voltage Figure 12. Temperature Coefficients

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 2N2907AS

SOT-23 (TO-236AB)

A
L NOTES:
1. CONTROLLING DIMENSION: MILLIMETERS
3
2. LEAD THICKNESS SPECIFIED PER L / F DRAWING WITH
B S SOLDER PLATING.
1 2

INCHES MILLIMETERS
V G DIM MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0180 0.0236 0.45 0.60
C L 0.0350 0.0401 0.89 1.02
S 0.0830 0.0984 2.10 2.50
V 0.0177 0.0236 0.45 0.60
D H J
K
STYLE 1 1:
PIN 1. ANODE
2. NO CONNECTION
3. C ATHODE

0.037
0.037 0.95
0.95

0.079
2.0

0.035
0.9

0.031 inches
0.8 mm

2008. 02. 18 Revision No : 1 5/5