Infineon-Discrete IGBT Datasheet Explanation-AN-v01 00-EN PDF
Infineon-Discrete IGBT Datasheet Explanation-AN-v01 00-EN PDF
Infineon-Discrete IGBT Datasheet Explanation-AN-v01 00-EN PDF
Application Note
Table of contents
1 Introduction ............................................................................................................... 2
1.1 Status of datasheets............................................................................................................................ 2
1.2 Type designation ................................................................................................................................. 3
2 IGBT datasheet parameters .......................................................................................... 5
2.1 Maximum ratings ................................................................................................................................. 5
2.2 Static characteristics ........................................................................................................................... 9
2.3 Dynamic characteristics .................................................................................................................... 13
2.4 Switching characteristics .................................................................................................................. 16
2.5 Other parameters and figures........................................................................................................... 20
3 Symbols and terms.................................................................................................... 26
4 References ............................................................................................................... 28
Introduction
1 Introduction
Datasheets provide information about products and their parameters, which characterize the products.
With this information designers could compare devices from different suppliers. Furthermore, the
information indicates the device’s limits.
Datasheet values describe the device’s behavior at different junction temperatures and testing conditions.
The dynamic characterization tests, from which the switching losses are extracted, are related to a specific
test setup with its individual characteristics. Therefore, these values can deviate from a final user
application and between datasheets of older and newer products.
The attached diagrams, tables and explanations refer to the IKW40N65H5 rev. 2.1 datasheet published in
2015-05-06 as an example. Table 3 and Table 4 only, refer respectively to IHW20N120R5 rev. 2.1 and
IHW15N120E1 rev. 2.1. For the latest version of datasheets please refer to Infineon’s website
www.infineon.com.
Infineon’s IGBT datasheets are normally arranged to contain:
A cover page with a short description of part number, IGBT technology and diode in case of DuoPack
Summarized features, key parameters, applications as well as basic package information
Maximum rated electrical values and IGBT thermal resistance as well as diodes in case of DuoPack
Electrical characteristics at room temperature, both static and dynamic parameters
Switching characteristics at 25°C and 150 or 175°C
Electrical characteristics diagrams
Package drawings
Figures of definition for key parameters
Revision history
Preliminary datasheet differentiating from a final datasheet in a way that certain data values are still
missing, for example the maximum values. These missing values in the preliminary data sheet are marked to
be defined (t.b.d). The preliminary datasheet is based on engineering samples, which are very close to final
products.
Normally the watermark of ‘Draft’ exists on preliminary datasheets.
Final datasheet including all the values, which are missing in the preliminary datasheet. Major changes of
IGBT and diode characteristics or changes in datasheet values after the release of the final datasheet are
accompanied by a Product Change Note (PCN).
Introduction
Thus, the part number indicates the manufacturer to be Infineon Technologies, the device configuration
single IGBT or DuoPack, the package type, the current class, the channel type, the break down voltage and
finally the product generation related to the technology.
Table 1 summarizes a detailed description of possible labels for the different products including discrete
IGBTs and diodes. It provides a useful tool to interpret each product part number. Group 7 is applicable for
products launched after December 2014. It contains the diode’s information for DuoPack devices.
Introduction
The value defines the lowest breakdown voltage limit based on statistical distribution out of IGBT mass
production. Furthermore, it defines the maximum permissible voltage between collector and emitter at a
junction temperature of 25°C. Exceeding this limit leads to a reduction of the device’s lifetime or to the
device failure.
This value is validated by the parameter V(BR)CES specified in the static characteristics section of the
datasheet. Please refer to paragraph 2.2.
DC collector current IC
IC is defined as the DC collector-emitter current value, which leads to an IGBT junction temperature Tvjmax
with a starting temperature of TC (usually 25°C or 100°C).
IC is obtained by the equation:
T Tvj max TC Rth( j c ) I C VCEsat@ Tvj max [1]
Furthermore, the figure section in the datasheets depicts IC as a function of the case temperature TC as given
in Figure 2.
The value at 100°C is typically used as current rating of the device and the device’s name. Please note that
based on this formula, an IGBT with low VCEsat results in higher current rating for the same chip size
compared to a fast IGBT, which has normally a higher VCEsat. However, since the IGBT is used as a switch, not
only conduction losses but also switching losses contribute to the total power losses.
To determine, whether or not the product fulfills the application’s requirements, calculations and
verifications are mandatory to be performed. They are based on design parameters like topology, switching
frequency, voltage, temperature, cooling capabilities, external RG and others.
ICpulse is defined as the maximum transient current at both turn-on and turn-off. In theory it is limited by the
power dissipation within a specific period of time, which allows the device to be operated within the
maximum junction temperature limit of Tjmax ≤ 175°C. However, there are some other limitations, for
instance bonding wire configuration, reliability consideration as well as a margin to avoid IGBT latching.
With state-of-the-art IGBTs it is usually rated at 3~4 times nominal current to keep a high level of reliability
as well as life time.
Moreover, this value also defines the current limitation given in the SOA.
The same definition as used for the pulse collector current ICpuls is used to define the diode forward
continuous current IF and the diode pulse current Ipuls in case of DuoPack device.
This parameter specifies the maximum gate voltage. Therefore, it defines a gate driver or gate clamp
limitation. Two conditions can be specified. The first one labeled as static and corresponds to the gate
voltage maximum values in case of continuous operation without damaging the device itself. The second
one is labeled transient and corresponds to the maximum values during transient operation. In this case, it
defines the maximum transient voltage, which could be applied to the gate without causing damages or
degradations. If the voltage stress on the gate is accidentally higher than specified, an immediate failure
may occur or it might cause an oxide degradation, which could lead to a later failure.
Ptot describes the maximum power dissipation allowed, correlated to the IGBT’s junction to case thermal
resistance. It can be calculated as
T [2]
Ptot
Rth ( j c )
In the datasheet’s figure section, the total power dissipation is given as a function of the case temperature
as it can be seen in Figure 3.
This parameter is extremely important for the design. Although the device will not fail immediately once the
limit is exceeded, the maximum junction temperature should never exceed its maximum rating. This will
lead to device degradation and reduced lifetime.
Infineon Technologies IGBTs achieved Tjmax = 175°C with the first generation of TrenchstopTM technology. It is
indeed 25°C higher than conventional ones like PT- and NPT-technologies. In an application with a given
thermal setup, a device with higher specified maximum junction temperatures could achieve longer life
times in comparison to conventional IGBTs with lower specified temperature rating. In other words,
customers are able to drive higher current out of the same power system, corresponding to higher power
density.
The thermal resistance characterizes the thermal behavior of power semiconductors at steady state.
Correspondingly, the thermal impedance Zth(j-c) describes the device’s thermal behavior during transient
pulses.
The IGBT/diode case should be considered as the leadframe of device. In case of a FullPAK, the central pin
should be considered as the case.
The maximum value stated in the datasheet takes the tolerance during mass production into consideration.
It is the value to be used for the product design-in.
The thermal resistance junction to case Rth(j-c) is a key parameter to determine the thermal behavior of
semiconductor devices. However in any design, it is not enough to compare this value directly from one
product to another. In the thermal dissipation path of a power system, as illustrated in Figure 4, the thermal
resistance junction to ambient Rth(j-a) plays the most important role, as it dictates the thermal limits in
operating conditions. It consists of a resistance case to ambient Rth(c-h) + Rth(h-a) and the resistance from
junction to case Rth(j-c). In most cases, the Rth of the thermal interface material, isolation - if applicable - and
heatsink is dominating the Rth(j-a). For the IKW40N65H5, the Rth(j-c)max is 0.6 K/W. The thermal resistance value
of typical thermal interface material (TIM) and isolation like isolation foil could be as low as 1 K/W and the
thermal resistance heatsink to ambient could range anywhere from 1 K/W with forced ventilation to tens of
K/W without ventilation. Therefore, the Rth(j-c) impact is only in the order of some single digit percent to some
tens of percent compared to the total Rth(j-a).
Mold
Chip compound
Junction temp. Tj
Rth(j-c) Solder
Copper leadframe
Rth(c-h) Case temp. Tc
Thermal interface material
Heatsink temp. Th
Heatsink
Rth(h-a)
Ambient temp. Ta
Rth(j-a) = Rth(j-c) + Rth(c-h) + Rth(h-a)
Figure 4 Thermal resistance chain of IGBT in application
This parameter specifies the minimum breakdown voltage at a specific leakage current. The current is for
this example Ic = 0.2 mA, which corresponds to different chip sizes as well as different IGBT technologies. The
collector-emitter breakdown voltage varies with junction temperature. Usually it has a positive temperature
coefficient for most Infineon IGBT products.
VCEsat represents the voltage drop between collector and emitter, when the nominal current is flowing
through the IGBT. It is specified typically at a gate voltage of 15 V and at several junction temperatures.
In the datasheet’s figure chapter, the chart of typical VCEsat values as a function of the junction temperature is
given, represented in Figure 5. With the latest TrenchstopTM 5 technology, a 40 A IGBT shows positive
temperature coefficient starting from 10 A. Such characteristics facilitate paralleling of IGBT for high power
applications, because the current is shared among the devices automatically. IGBT devices of traditional PT
technologies show a negative temperature coefficient even at nominal currents. This results in high
reliability risks in parallel operation. Therefore, it limits the maximum power capability.
The diode forward voltage (VF ) refers to the voltage across the diode during conduction mode. In the
datasheet’s figure chapter, the typical VF values as function of temperature are given as shown in Figure 6.
Note that it is usually characterized by a slightly negative temperature coefficient at nominal diode current.
This parameter represents the gate voltage, which initiates a current flow from collector to emitter. Figure 7
depicts the detailed temperature behavior of the gate threshold voltage.
These parameters indicate the upper limit of leakage current between collector and emitter (I CES) or gate and
emitter (IGES). They are normally determined by the technology as well as the manufacturing and process
tolerances. Note that ICES correlates to the breakdown voltage. When the device is in off-mode with voltage
applied between collector and emitter, ICES flows in the IGBT and it introduces some quiescent losses. In
order to reduce the impact of these losses, ICES has to be kept as low as possible during the development
phase. A low leakage value would contribute to higher quality and reliability of the final product as well.
The leakage current specification at Tvj = 175°C is not relevant in typical applications, because the device’s
junction temperature cannot reach 175°C in off-state. Therefore, datasheets of new products do not include
the maximum value at Tvj = 175°C anymore. A typical value is specified instead.
Transconductance gfs
The transconductance gfs stands for the current flow variation according to a gate voltage change. As
presented in Figure 8, the curve’s slope at every single point is exactly the transconductance value for a
specific collector current, gate voltage and temperature condition.
Figure 8 also indicates the gate voltage threshold dependency of the temperature. VGE(th) is the voltage to be
applied to the gate to activate a current flow in the IGBT. It is lower at higher temperatures, approximately
4.5 V at 150°C and 5.4 V at 25°C, that means a negative temperature coefficient of VGE(th). This should be
carefully considered in parallel operations.
The transconductance gfs and Figure 8 are instrumements to describe the controllability of the IGBT, they
should not be understood as operating conditions.
The dynamic characteristics refer to the device parameters, which are related to gate driving as well as
switching characteristics.
Input, output and reverse transfer capacitance Cies, Coes and Cres
Figure 9 shows an equivalent circuit diagram for the IGBT and provides an electrical visualization of above
mentioned parameters.
The input capacitance Cies, given by the sum of Cres and CGE, is a key parameter to design the driver stage. It
has to be charged and discharged within every switching cycle. Therefore, it defines the gate charge losses.
On the other hand CGE reduced the risks of parasitic turn-on due to the current through the capacitor Cres
during switching events in half bridge configurations.
The reverse transfer capacitance Cres, also known as miller capacitance, determines the time constant, which
dictates the crossing time between current and voltage during switching. As a result, it is influencing the
switching losses. The factor Cres/CGE has a high influence on the coupling effect between collector-emitter’s
dV/dt and VGE. Reducing the ratio enables fast switching capability as well as avoiding unwanted parasitic
turn-on of the device.
Coss is the output capacitance. It is the sum of CCE and Cres. It has a high influence on the EMI behavior,
because it impacts the collector-emitter dV/dt.
As given in Figure 10, all these capacitances have a non-linear behavior as a function of the collector-emitter
voltage.
Gate charge QG
This parameter describes the charge required to drive the gate voltage VGE to a certain value, which is
typically 15 V. It constitutes a main factor for the driving losses. Consequently, it affects the whole drive
circuit design and dimensioning. The driving losses can be derived by the equation:
PGdr QG (VGE (on) VGE (off ) ) f sw [3]
Figure 11 shows the typical gate charge diagram, where it is possible to read the QG values needed to drive
VGE to a certain value.
QG is a function of the load current and the collector-emitter voltage. Usually it is plotted for the nominal
value of IC and for different VCE values, like 130 V and 520 V in Figure 11.
Notice that VCE has not a significant impact on this parameter.
LE contributes to the total commutation loop inductance value, which normally defines both the voltage
overshoot as well as parts of the switching losses. Therefore, the value needs to be minimized especially for
IGBTs operated at high switching frequencies.
Note: The voltage drop across the internal emitter inductance cannot be measured externally, but needs to
be considered for the maximum VCE-voltage during switching off.
The switching characteristics indicate the basic switching performance of the device. The switching
characteristics are normally specified at several conditions.
It should be considered that switching performances are highly dependent on several factors, for instance:
collector current, collector-emitter-voltage, temperature, external gate resistance as well as board design
and parasitic parameters especially inductances and capacitances. Therefore, a direct comparison between
parts from different manufactures based on datasheet values might not be a fair comparison. Thus, it is
highly recommended to evaluate the devices by means of application tests and proper characterization.
As given in Table 2, this section provides switching times as well as switching losses for a certain
measurement setup in well-defined and specified conditions. Usually, the switching characteristics are
specified at one or two collector current values, at room temperature 25°C and high temperature 150°C or
175°C.
Those entities are usually measured and evaluated according to the definitions of international standards,
like JEDEC or IEC60747-9 (2007) as depicted in Figure 12.
Referring to Figure 12 switching timings are:
t(d)on : time interval from 10% of VGE to 10% of ICM (left side)
tr : time interval from 10% of ICM to 90% of ICM (left side)
t(d)off : time interval from 90% of VGE to 90% of ICM (right side)
tf : time interval from 90% of ICM to 10% of ICM (right side)
Where VGE is the gate voltage and ICM is the collector current.
The switching losses Eon and Eoff are calculated as the integral of the power loss over the switching period.
The power loss is the product of VCE and IC. In this case, the timing definition takes the IGBT tail current effect
into account.
Following the IEC standard:
For Eon: tsw starts at 10% of VGE and lasts until 2% of VCE
For Eoff: tsw starts at 90% of VGE and lasts until 2% of ICM.
Ets, total switching losses, is the sum of Eon and Eoff.
The test setup used for deriving the switching characteristics is shown in Figure 13.
Usually the IGBTs used as high side switch and low side switch are identical. The low side IGBT is the device
under test, called DUT IGBT. The gate of the high side IGBT is directly connected to or even negatively biased
against the emitter to allow conducting of the anti-parallel diode only. The high side anti-parallel diode is
called DUT diode.
The load current could be easily adjusted by controlling the conduction time of the low side IGBT but it is
also defined by the DC-link voltage and the loop inductance. When the current reaches the desired value,
the low side IGBT would be switched off. Based on waveforms during this process, the switching time as well
as energy at turn-off could be easily obtained.
After the IGBT is fully turned off, the whole current freewheels through the high side diode. Since the value
of the load inductance L is relatively high, the load current does not decay during the short freewheeling
phase.
Then the IGBT is switched on again to measure the switching time and energy during turn-on. However, due
to recovery characteristics of the diode, the IGBT’s Eon also includes the recovery energy from the high side
diode. Therefore, the anti-parallel diode has to be selected carefully to achieve the best match with the IGBT
technology.
Due to accuracy limitations of the equipment as well as existence of parasitic capacitance, which might
cause oscillations on the tail current, it is difficult to determine the time, at which ICM is exactly 2%.
This implies that there might be some discrepancies concerning the switching time definitions used by
different manufacturers and the ones provided by standards.
Based on previous considerations, Infineon Technologies typically calculates Eon in the interval between
10% of VGE until 3% of VCE, and Eoff in the interval from 90% of VGE to 1% of ICM. The slightly lower turn-on time
is compensated by the higher turn-off time. In any case the adapted definition should be published in official
documents like datasheets and application notes.
Moreover, in order to provide a complete overview of the part’s switching behavior, several charts are
plotted in the datasheet. Those are:
1. Switching time tsw as a function of the collector current IC.
2. Switching time tsw as a function of the external gate resistor RG.
3. Switching time tsw as a function of the junction temperature Tj.
4. Switching energies Eon, Eoff and Ets as a function of the collector current IC.
5. Switching energies Eon, Eoff and Ets as a function of the gate resistor RG.
6. Switching energies Eon, Eoff and Ets as a function of the junction temperature Tj.
7. Switching energies Eon, Eoff and Ets as a function of the collector-emitter voltage VCE.
For IGBTs that are intended for resonant application (induction cooking, inverterized microwave ovens,
industrial welding, battery charging), only the indications of turn-off parameters are included in the
datasheet. This modification is made because these devices operate generally in soft switching
commutations at turn-on and therefore the indications of turn-on parameters are of no use.
0 is taken from the datasheet of IHW20N120R5 and contains the same information about the turn-off
characteristics that has been already presented before. Additionally, the testing conditions are also
indicated. The test circuit and the procedure to measure these paramenters are the same as has been
explained previously.
Table 3 Switching characteristics of the IGBTs for resonant applications
Sometimes, as shown in Table 4, soft turn-off energy is indicated instead of the common turn-off energy.
This value corresponds to the turn-off energy of the IGBT when a snubber capacitance is included for
limiting the dVCE/dt. The rate of rise of the VCE is indicated in the testing condition, whilst the other electrical
parameters are assumed to be the same as indicated in timings section. Table 4 is taken from the datasheet
of IHW15N120E1.
The soft Eoff calculation is slightly different from the hard turn-off case. In particular:
Eoff is measured as the integral of the power losses (product of VCE and IC) between t1 and t2, where t1 is
the time at 90% of VGE and t2 is the time at 1% of IC.
The test setup used for deriving the switching characteristics is shown in Figure 14 together with the typical
waveforms of the circuit. The DUT IGBT is operating as low side switch and the high side load consists of a
parallel RLC network. The load current could be adjusted by controlling the conduction time of the IGBT but
it is also defined by the DC-link voltage and the loop inductance. When the current reaches the desired
value, the low side IGBT would be switched off. Based on waveforms measured during this process, the
switching time as well as energy at turn-off could be easily obtained.
When the IGBT is turned-off the inductor current recirculates into the paralleled capacitor. The rate of rise of
the VCE at the desired load current can be tuned by choosing a proper value of the capacitance Cr.
Figure 14 Setup and typical waveforms for soft turn-off parameters definition
For IGBTs for resonant applications, the following charts are plotted in the datasheet, either for hard
switching or soft switching:
1. Turn-off switching time tsw as a function of the collector current IC.
2. Turn-off switching time tsw as a function of the external gate resistor RG.
3. Turn-off switching time tsw as a function of the junction temperature Tj.
4. Turn-off switching energy Eoff as a function of the collector current IC.
5. Turn-off switching energy Eoff as a function of the gate resistor RG.
6. Turn-off switching energy Eoff as a function of the junction temperature Tj.
7. Turn-off switching energy Eoff as a function of the collector-emitter voltage VCE.
For DuoPack and Reverse-Conducting IGBTs (IKx and IHx), also the electrical features for the anti-parallel
diode are specified in the datasheet.
The main parameters that define the diode’s switching behavior can be listed as:
Reverse recovery time and charge
Peak reverse recovery current
Peak rate of fall of reverse recovery current during a defined pulse length.
These values are usually provided at one or two diode forward current values as well as at room
temperature 25°C and high temperature, like 150°C or 175°C.
Since the anti-parallel diode often acts as freewheeling diode in applications, its recovery behavior is very
important, especially at high switching frequency operation. Its performance is strongly influenced by the
diode forward current IF, by forward current change rate dIF/dt as well as the operating temperature.
Furthermore the anti-parallel diode influences the overall performance of the IGBT, especially the turn-on.
To provide a complete overview of the anti-parallel diode’s characteristics, several diagrams concerning the
switching performance are provided in the datasheet. Those are:
1. Reverse recovery time trr as a function of the diode’s current slope dIF/dt.
2. Reverse recovery charge Qrr as a function of the diode’s current slope dIF/dt.
3. Reverse recovery peak current Irr as a function of the diode’s current slope dIF/dt.
4. Peak rate of fall of recovery current dIrr/dt as a function of the diode’s current slope dIF/dt.
Output characteristics
The output characteristics represent the voltage VCE as a function of the current IC conducted. To provide a
complete overview it is normally given at several gate voltages VGE. Those curves depend on the junction
temperature. Therefore two dedicated diagrams are provided in the datasheet, one at room temperature
25°C like Figure 15 and one at high temperature 150°C or 175°C.
Referring to Figure 15 it is possible to see, how the load current tends to saturate at a certain value, if the
gate voltage VGE is set below 10 V.
To avoid IGBT’s saturation also called linear mode of operation, it is recommended to drive it with at least
VGE = 15 V.
Fast switching devices usually have higher transconductance values. As a result, lower driving voltage like
+12 V could also be considered mainly to achieve benefits like:
1. Increasing the short circuit withstand time for higher reliability
2. Reducing the voltage overshoot during switch off
3. Reducing the driving losses for gate drivers operated at high frequency
The drawbacks of lower gate voltages should be considered too; higher conduction loss as well as higher
switching losses.
tSC defines the time interval, which the device can withstand in short circuit condition without failing. It is
defined at high junction temperatures 150°C or 175°C, at a gate voltage of VGE = +15 V and a certain bus
voltage VCC. The bus voltage for this parameter is typically below the device breakdown 400 V for 600 V
voltage class device.
The typical waveform during short circuit type ǀ is depicted in Figure 16.
During a short circuit event, the collector current raises rapidly according to the DC-link’s voltage and loop
inductance. Afterwards it stays at a high value corresponding to the saturation current at the specific gate
voltage. However, the voltage drop across the IGBT is more or less the same as the DC-link voltage.
Therefore, a huge power loss is generated in the chip, leading to a fast increase of the junction temperature.
In spite of the fact that the current slightly decreases due to the higher junction temperature, the power
losses are extremely high and will destroy the IGBT after a certain period of time. To avoid IGBT destruction
in short circuit operation, it is necessary to protect the IGBT accordingly.
In general, the short circuit withstand time varies from technology to technology and it indicates the level of
the IGBT robustness. Note that it is often the outcome from the technology trade-off optimization. Higher
short circuit withstand time is obtained by limiting the carrier density as well as the IGBT transconductance.
This reduces switching and conduction performances.
The typical value of short circuit current is specified for short circuit rated IGBTs.
In the datasheet, two charts are available as presented in Figure 17. It shows the tSC and IC(SC) behavior as a
function of the gate voltage VGE.
Note that tSC decreases and IC(SC) instead increases for higher VGE values, which is correlated to the output
characteristics.
Figure 17 Typical short circuit collector current (left) and withstand time (right) as a function of the
gate voltage
The forward bias SOA (FBSOA) defines the IGBT’s safe operating conditions during forward biasing
operation. It is represented in the Cartesian space VCE vs. IC with an area limited by four parameters. The
upper current limit is defined by the device pulse current capability ICpulse, the maximum voltage limitation is
defined by the device breakdown voltage V(BR)CES, and the minimum one by the output characteristics in
linear mode. At last, the device safe operation area is limited by thermals, represented with dashed lines in
the charts, corresponding to the device’s transient power dissipation capability.
It is possible to derive values for the thermal limitation in the SOA curve based on the IGBT transient thermal
impedance given in Figure 19 and equation [4]:
equation:
T j max Tc [4]
Ptransient VCE I C
Z th ( j c )
The second safe operating area is the Reverse Bias SOA or RBSOA, which is defined by:
The parameter provides the safe operating conditions for IGBTs during turn-off and it usually refers to an
inductive load. With state-of-the-art IGBT technologies the RBSOA is a square shaped area defined by the
device breakdown voltage V(BR)CES and the maximum pulse current ICpulse.
References
4 References
[1] Infineon Application note AN2011-05 V1.1 ‘Industrial IGBT Modules – Explanation of Technical
Information’, May 2013, Warstein, Germany
Revision history
Major changes since the last revision
Page or reference Description of change
Page 2 Added indication of reference devices for dynamic characteristics of IGBT used in
soft switching applications
Page 18-19 Added explanation of soft-switching dynamic characteristics
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