AEC-Q101 Qualified

4V Drive Nch MOSFET

RHU002N06FRA

Structure Dimensions (Unit : mm)

Silicon N-channel
UMT3
MOSFET transistor
2.0 0.9

0.3 0.2 0.7

(3)
Features

1.25

2.1
1) Low on-resistance.
(2) (1)
2) High ESD.

0.1Min.
0.65 0.65
3) High-speed switching. 1.3 0.15

4) Low-voltage drive (4V).

(1) Source Each lead has same dimensions
5) Drive circuits can be simple. (2) Gate
6) Parallel use is easy. (3) Drain Abbreviated symbol : KP

Applications
Switching

Packaging specifications Equivalent circuit

Package Taping (3)

Code T106
Type Basic ordering unit (pieces) 3000
RHU002N06
RHU002N06FRA (2) ∗2

∗1
Absolute maximum ratings (Ta=25C) (1) Source
∗1 ESD PROTECTION DIODE (1) (2) Gate
∗2 BODY DIODE (3) Drain
Parameter Symbol Limits Unit
Drain-source voltage VDSS 60 V ∗ A protection diode has been built in between the
gate and the source to protect against static
Gate-source voltage VGSS ±20 V electricity when the product is in use.
Use the protection circuit when fixed voltages are
Continuous ID ±200 mA exceeded.
Drain current
Pulsed IDP ∗1 ±800 mA

Source current Continuous IS 200 mA

(Body diode) Pulsed ISP ∗1 800 mA
∗2
Total power dissipation PD 200 mW
Channel temperature Tch 150 °C
Storage temperature Tstg −55 to +150 °C
∗1 Pw≤10μs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended

Thermal resistance
Parameter Symbol Limits Unit
Channel to ambient Rth (ch-a) ∗ 625 °C / W
∗ With each pin mounted on the recommended land.

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RHU002N06FRA Data Sheet

Electrical characteristics (Ta=25C)

Parameter Symbol Min. Typ. Max. Unit Test Conditions
Gate leakage current IGSS − − ±10 μA VGS=±20V, VDS=0V
Drain-source breakdown voltage V (BR) DSS 60 − − V ID=1mA, VGS=0V
Drain cutoff current IDSS − − 1 μA VDS=60V, VGS=0V
Gate threshold voltage VGS (th) 1 − 2.5 V VDS=10V, ID=1mA
− 1.7 2.4 ID=200mA, VGS=10V
Drain-source on-state resistance RDS (on)∗ Ω
− 2.8 4.0 ID=200mA, VGS=4V
Forward transfer admittance l Yfs l∗ 0.1 − − S VDS=10V, ID=200mA
Input capacitance Ciss − 15 − pF VDS=10V
Output capacitance Coss − 8 − pF VGS=0V
Crss − 4 − pF f=1MHz
Reverse transfer capacitance
Turn-on delay time td (on)∗ − 6 − ns
ID=100mA, VDD 30V
Rise time tr∗ − 5 − ns VGS=10V
Turn-off delay time td (off)∗ − 12 − ns RL=300Ω
RG=10Ω
Fall time tf∗ − 95 − ns
Total gate charge Qg∗ − 2.2 4.4 nC VDD 30V
Gate-source charge Qgs∗ − 0.6 − nC VGS=10V
ID=200mA
Gate-drain charge Qgd∗ − 0.3 − nC
∗ Pulsed

Body diode characteristics (Source-drain) (Ta=25C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage VSD ∗ − − 1.2 V IS=200mA, VGS=0V
∗Pulsed

Electrical characteristic curves

0.8 1 2.5
GATE THRESHOLD VOLTAGE : VGS (th) (V)

10V VDS=10V VDS=10V

Ta=25°C Pulsed ID=1mA
0.7 Pulsed
8V Pulsed
6V 2.0
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)

0.6
0.1
0.5 Ta=−25˚C 1.5
4V 25˚C
0.4 75˚C
125˚C
0.3 1.0
3.5V
0.01
0.2
VGS=3V 0.5
0.1

0.0 0.001 0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 −50 −25 0 25 50 75 100 125 150

DRAIN-SOURCE VOLTAGE : VDS (V) GATE-SOURCE VOLTAGE : VGS (V) CHANNEL TEMPERATURE : Tch (°C)

Fig.1 Typical Output Characteristics Fig.2 Typical Transfer Characteristics Fig.3 Gate Threshold Voltage
vs. Channel Temperature

10 10 7
VGS=10V VGS=4V Ta=25°C
ON-STATE RESISTANCE : RDS (on) (Ω)

ON-STATE RESISTANCE : RDS (on) (Ω)

Pulsed Pulsed Pulsed

ON-STATE RESISTANCE : RDS (on) (Ω)

6
Ta=125°C
75°C
Ta=125°C 25°C 5
STATIC DRAIN-SOURCE

75°C
STATIC DRAIN-SOURCE

−25°C
25°C
STATIC DRAIN-SOURCE

−25°C 4
ID=200mA
3

2
100mA
1

1.0 1.0 0
0.01 0.1 1.0 0.01 0.1 1.0 0 5 10 15 20
DRAIN CURRENT : I D (A) DRAIN CURRENT : I D (A) GATE-SOURCE VOLTAGE : VGS (V)

Fig.4 Static Drain-Source On-State Fig.5 Static Drain-Source On-State Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current ( Ι ) Resistance vs. Drain Current ( ΙΙ ) Resistance vs. Gate-Source Voltage

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 RHU002N06FRA Data Sheet

3.0 1 10
VGS=10V VGS=0V Ta=25°C

REVERSE DRAIN CURRENT : IDR (A)

REVERSE DRAIN CURRENT : IDR (A)

Pulsed Pulsed
ON-STATE RESISTANCE : RDS (on) (Ω)

Pulsed

2.5 1 VGS=10V
0.1
Ta=125°C
STATIC DRAIN-SOURCE

ID=200mA 75°C
2.0 25°C 0.1 0V
−25°C

0.01
100mA
1.5 0.01

1.0 0.001 0.001

−50 −25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2
CHANNEL TEMPERATURE : Tch (°C) SOURCE-DRAIN VOLTAGE : VSD (V) SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.7 Static Drain-Source On-State Fig.8 Reverse Drain Current vs. Fig.9 Reverse Drain Current vs.
Resistance vs. Channel Temperature Source-Drain Voltage ( Ι ) Source-Drain Voltage ( ΙΙ )

1 100 1000
FORWARD TRANSFER ADMITTANCE : I Yfs I (S)

VGS=10V Ta=25°C Ta=25°C

Pulsed f=1MHz VDD=30V
VGS=0V VGS=10V
RG=10Ω

SWITCHING TIME : t (ns)

tf
Ta=−25°C Pulsed
CAPACITANCE : C (pF)

0.1 25°C 100

75°C Ciss
125°C
10 td(off)
Coss
0.01 10
td(on)
Crss
tr

0.001 1 1
0.001 0.01 0.1 1 0.01 0.1 1 10 100 1 10 100 1000

DRAIN CURRENT : ID (A) DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (mA)

Fig.10 Forward Transfer Admittance Fig.11 Typical Capacitance Fig.12 Switching Characteristics
vs. Drain Current vs. Drain-Source Voltage

Switching characteristics measurement circuit

Pulse width

90%
VGS 50% 50%
ID VGS
VDS 10%
D.U.T. RL
RG VDS 10% 10%
VDD
90%
90%
td (on) tr tf
td (off)
ton toff

Fig.13 Switching time test circuit Fig.14 Switching time waveforms

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 Notice

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R1120A
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