ISO5500 2.5-A Isolated IGBT, MOSFET Gate Driver: 1 Features 3 Description

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ISO5500
SLLSE64D – SEPTEMBER 2011 – REVISED JANUARY 2015
ISO5500 2.5-A Isolated IGBT, MOSFET Gate Driver

1 Features 3 Description
•
1 2.5-A Maximum Peak Output Current The ISO5500 is an isolated gate driver for IGBTs and
MOSFETs with power ratings of up to IC = 150 A and
• Drives IGBTs up to IC = 150 A, VCE = 600 V VCE = 600 V. Input TTL logic and output power stage
• Capacitive Isolated Fault Feedback are separated by a capacitive, silicon dioxide (SiO2),
• CMOS/TTL Compatible Inputs isolation barrier. When used in conjunction with
• 300-ns Maximum Propagation Delay isolated power supplies, the device blocks high
voltage, isolates ground, and prevents noise currents
• Soft IGBT Turnoff from entering the local ground and interfering with or
• Integrated Fail-Safe IGBT Protection damaging sensitive circuitry.
– High VCE (DESAT) Detection The device provides over-current protection (DESAT)
– Undervoltage Lockout (UVLO) Protection With to an IGBT or MOSFET while an Undervoltage
Hysteresis Lockout circuit (UVLO) monitors the output power
supply to ensure sufficient gate drive voltage. If the
• User Configurable Functions
output supply drops below 12 V, the UVLO turns the
– Inverting, Noninverting Inputs power transistor off by driving the gate drive output to
– Auto-Reset a logic low state.
– Auto-Shutdown For a DESAT fault, the ISO5500 initiates a soft
• Wide VCC1 Range: 3 V to 5.5 V shutdown procedure that slowly reduces the
IGBT/MOSFET current to zero while preventing large
• Wide VCC2 Range: 15 V to 30 V
di/dt induced voltage spikes. A fault signal is then
• Operating Temperature: –40°C to 125°C transmitted across the isolation barrier, actively
• Wide-Body SO-16 Package driving the open-drain FAULT output low and
• ±50-kV/us Transient Immunity Typical disabling the device inputs. The inputs are blocked as
long as the FAULT-pin is low. FAULT remains low
• Safety and Regulatory Approvals: until the inputs are configured for an output low state,
– VDE 6000 VPK Basic Isolation per DIN V VDE followed by a logic low input on the RESET pin.
V 0884-10 (VDE V 0884-10) and DIN EN
The ISO5500 is available in a 16-pin SOIC package
61010-1 and is specified for operating temperatures from
– 4243 VRMS Isolation for One Minute per UL –40°C to 125°C.
1577
– CSA Component Acceptance Notice #5A, IEC Device Information(1)
61010-1, and IEC 60950-1 End Equipment PART NUMBER PACKAGE BODY SIZE (NOM)
Standards ISO5500 SOIC (16) 10.30 mm × 7.50 mm
(1) For all available packages, see the orderable addendum at
2 Applications the end of the datasheet.
• Isolated IGBT and MOSFET Drives in

Functional Block Diagram
– Motor Control
– Motion Control VCC1
VREG ISO5500
– Industrial Inverters - VCC2

VIN+ UVLO
– Switched-Mode Power Supplies + VC
V IN- + DESAT
Gate DESAT 12 .3V
Drive -
ISO - Barri er
DELAY
and
7.2 V Q1b Q1a
Fault Q4
Logic VOUT
FAULT
Q S
VE
R
RESET Q3
Q2b Q2a
VEE-P
GND1
VEE-L
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
ISO5500
SLLSE64D – SEPTEMBER 2011 – REVISED JANUARY 2015 www.ti.com
Table of Contents
1 Features .................................................................. 1 8.3 Feature Description................................................. 17
2 Applications ........................................................... 1 8.4 Device Functional Modes........................................ 25
3 Description ............................................................. 1 9 Application and Implementation ........................ 26
4 Revision History..................................................... 2 9.1 Application Information............................................ 26
9.2 Typical Application ................................................. 26
5 Pin Configuration and Functions ......................... 3
6 Specifications......................................................... 4 10 Power Supply Recommendations ..................... 35
6.1 Absolute Maximum Ratings ...................................... 4 11 Layout................................................................... 35
6.2 ESD Ratings.............................................................. 4 11.1 Layout Guidelines ................................................. 35
6.3 Recommended Operating Conditions....................... 4 11.2 PCB Material ......................................................... 35
6.4 Thermal Information .................................................. 5 11.3 Layout Example .................................................... 35
6.5 Electrical Characteristics........................................... 5 12 Device and Documentation Support ................. 36
6.6 Switching Characteristics .......................................... 6 12.1 Device Support...................................................... 36
6.7 Typical Characteristics .............................................. 7 12.2 Documentation Support ........................................ 36
7 Parameter Measurement Information ................ 12 12.3 Trademarks ........................................................... 36
12.4 Electrostatic Discharge Caution ............................ 36
8 Detailed Description ............................................ 16
8.1 Overview ................................................................. 16 13 Mechanical, Packaging, and Orderable
8.2 Functional Block Diagram ....................................... 16
Information ........................................................... 36
4 Revision History
Changes from Revision C (June 2013) to Revision D Page
• Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional
Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1
• VDE standard changed to DIN V VDE V 0884-10 (VDE V 0884-10):2006-12 ...................................................................... 1
• Added FAULT limits to Absolute Maximum Ratings .............................................................................................................. 4
Changes from Revision B (May 2013) to Revision C Page
• Changed VCE from1200 V to 600 V ........................................................................................................................................ 1

• Added the Thermal Information table inside the data sheet below the Absolute Maximum Ratings table ............................ 5
• Changed row VIORM and VPR specification from VIORM of 1200Vpk to 680 Vpk....................................................................... 17
• Changed 1200 VPK in the Regulatory Information table from 1200 VPK to 680 VPK ............................................................. 17
• Deleted last row of the IEC 60664-1 Rating Table............................................................................................................... 18
• Added Isolation Lifetime at a Maximum Continuous Working Voltage table........................................................................ 18
• Added Function Table under the Functional Block Diagram ................................................................................................ 25
Changes from Revision A (July 2012) to Revision B Page
• Changed the Regulatory Approvals List ................................................................................................................................. 1

• Changed the REGULATORY INFORMATION table, VDE Column From: File Number: pending To: File Number:
40016131.............................................................................................................................................................................. 17
• Changed the REGULATORY INFORMATION table, CSA Column From: File Number: pending To: File Number:
220991.................................................................................................................................................................................. 17
Changes from Original (September 2011) to Revision A Page
• Changed the device From: Product Preview To: Production ................................................................................................. 1
2 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated
Product Folder Links: ISO5500

ISO5500
www.ti.com SLLSE64D – SEPTEMBER 2011 – REVISED JANUARY 2015
5 Pin Configuration and Functions
DW Package
16-Pin SOIC
Top View
VIN+ 1 16 VE
VIN- 2 15 VEE-L
VCC1 3 14 DESAT
ISOLATION
GND1 4 13 VCC2
RESET 5 12 VC
FAULT 6 11 VOUT
NC 7 10 VEE-L
GND1 8 9 VEE-P
Pin Functions
PIN
I/O DESCRIPTION
NO. NAME
1 VIN+ I Noninverting gate drive voltage control input
2 VIN– I Inverting gate drive voltage control input
3 VCC1 Supply Positive input supply (3 V to 5.5 V)
4,8 GND1 Ground Input ground
5 RESET I FAULT reset input
6 FAULT O Open-drain output. Connect to 3.3k pullup resistor
7 NC NC Not connected
9 VEE-P Supply Most negative output-supply potential of the power output. Connect externally to pin 10.
Most negative output-supply potential of the logic circuitry. Pin 10 and 15 are internally connected.
10, 15 VEE-L Supply
Connect at least pin 10 externally to pin 9. Pin 15 can be floating.
11 VOUT O Gate drive output voltage
12 VC Supply Gate driver supply. Connect to VCC2.
13 VCC2 Supply Most positive output supply potential
14 DESAT I Desaturation voltage input
16 VE Ground Gate drive common. Connect to IGBT Emitter.
Copyright © 2011–2015, Texas Instruments Incorporated Submit Documentation Feedback 3

ISO5500
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Supply voltage, VCC1 –0.5 6 V
Total output supply voltage, VOUT(total) (VCC2 – VEE-P) –0.5 35 V
35 –
Positive output supply voltage, VOUT+ (VCC2 – VE) –0.5 V
(VE – VEE-P)
Negative output supply voltage, VOUT- (VE – VEE-P) –0.5 VCC2 V
DESAT VE – 0.5 VCC2
Voltage at V
VIN+, VIN–, RESET, FAULT –0.5 6
Peak gate drive output voltage Vo(peak) –0.5 VCC2 V
Collector voltage, VC –0.5 VCC2 V
(1)
Output current , IO ±2.8 A
FAULT output current, IFL ±20 mA
Maximum junction temperature, TJ 170 °C
Storage temperature, Tstg –65 150 °C
(1) Maximum pulse width = 10 μs, maximum duty cycle = 0.2%.
6.2 ESD Ratings

VALUE UNIT
(1)
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 ±4000
Charged-device model (CDM), per JEDEC specification JESD22- ±1500
V(ESD) Electrostatic discharge V
C101 (2)
Machine model JEDEC JESD22-A115-A ±200
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VCC1 Supply voltage 3 5.5 V
VOUT(total) Total output supply voltage (VCC2 – VEE-P) 15 30 V
30 – (VE – V
VOUT+ Positive output supply voltage (VCC2 – VE) 15
VEE-P)
VOUT– Negative output supply voltage (VE – VEE-P) 0 15 V
VC Collector voltage VEE-P + 8 VCC2 V
tui Input pulse width 0.1 μs
tuiR RESET Input pulse width 0.1 μs
VIH High-level input voltage (VIN+, VIN–, RESET) 2 VCC V
VIL Low-level input voltage (VIN+, VIN–, RESET) 0 0.8 V
fINP Input frequency 520 (1) kHz
(2)
VSUP_SR Supply Slew Rate (VCC1 or VCC2 – VEE-P) 75 V/ms
TJ Junction temperature –40 150 °C
TA Ambient temperature -40 25 125 °C
(1) If TA = 125°C, VCC1= 5.5 V, VCC2 = 30 V, RG = 10 Ω, CL = 1 nF

(2) If VCC1 skew is faster than 75 V/ms (especially for the falling edge) then VCC2 must be powered up after VCC1 and powered down before
VCC1 to avoid output glitches.

ISO5500
6.4 Thermal Information

ISO5500
THERMAL METRIC (1) DW (SOIC) 16 UNIT
PINS
θJA Junction-to-ambient thermal resistance 76
θJCtop Junction-to-case (top) thermal resistance 34
θJB Junction-to-board thermal resistance 36 °C/W
ψJT Junction-to-top characterization parameter 8
ψJB Junction-to-board characterization parameter 35
TSHDN+ 185 °C
Thermal Shutdown
TSHDN- 173 °C
TSHDN-HYS Thermal Shutdown Hysteresis 12 °C
PD Power Dissipation See Equation 2 through Equation 6 592 mW
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
6.5 Electrical Characteristics

All typical values are at TA = 25°C, VCC1 = 5 V, VCC2 – VE = 30 V, VE – VEE-P = 0 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Quiescent VI = VCC1 or 0 V, No load, See Figure 1, 5.5 8.5
ICC1 Supply current mA
300 kHz Figure 2, Figure 28, and Figure 29 5.7 8.7
Quiescent VI = VCC1 or 0 V, No load, See Figure 3 8.4 12
ICC2 Supply current mA
300 kHz through Figure 5, Figure 30, and Figure 31 9 14
IOUT = 0, See Figure 27 and Figure 30 1.3
ICH High-level collector current mA
IOUT = –650 μA, See Figure 27 and Figure 30 1.9
ICL Low-level collector current See Figure 27 and Figure 31 0.4 mA
IEH VE High-level supply current See Figure 6 and Figure 40 –0.5 –0.3 mA
IEL VE Low-level supply current See Figure 6 and Figure 41 –0.8 –0.53 mA
IIH High-level input leakage 10
IN from 0 to VCC μA
IIL Low-level input leakage –10
VFAULT = VCC1, no pull-up,
IFH High-level FAULT pin output current –10 10 μA
See Figure 33
IFL Low-level FAULT pin output current VFAULT = 0.4 V, no pull-up, See Figure 34 5 12 mA
VIT+(UVLO) Positive-going UVLO threshold voltage 11.6 12.3 13.5
VIT–(UVLO) Negative-going UVLO threshold voltage See Figure 32 11.1 12.4 V
VHYS (UVLO) UVLO Hysteresis voltage (VIT+ – VIT–) 0.7 1.2
VOUT = VCC2 – 4 V (1), See Figure 7 and
–1 –1.6
Figure 35
IOH High-level output current A
VOUT = VCC2 – 15 V (2), See Figure 7 and
–2.5
Figure 35
VOUT = VEE-P + 2.5 V (1), See Figure 8 and
1 1.8
Figure 36
IOL Low-level output current A
VOUT = VEE-P + 15 V (2), See Figure 8 and
2.5
Figure 36
VOUT – VEE-P = 14 V, See Figure 9 and
IOF Output-low fault current 90 140 230 mA
Figure 37
IOUT = –100 mA, See Figure 10, Figure 11
VC-1.5 VC-0.8
and Figure 38
VOH High-level output voltage V
IOUT = –650 μA, See Figure 10, Figure 11 and
VC-0.15 VC-0.05
Figure 38
IOUT = 100 mA, See Figure 12, Figure 13 and
VOL Low-level output voltage 0.2 0.5 V
Figure 39
VDESAT = 0 V to 6 V, See Figure 14 and
ICHG Blanking capacitor charging current –180 –270 –380 μA
Figure 42
IDSCHG Blanking capacitor discharge current VDESAT = 8 V, See Figure 42 20 45 mA
(1) Maximum pulse width is 50 μs, maximum duty cycle is 0.5%

(2) Maximum pulse width is 10 μs, maximum duty cycle is 0.2%
ISO5500
Electrical Characteristics (continued)

(VCC2 – VE) > VTH-(UVLO), See Figure 15 and
VDSTH DESAT threshold voltage 6.7 7.2 7.7 V
Figure 42
VI = VCC1 or 0 V, VCM at 1500 V,
CMTI Common mode transient immunity 25 50 kV/μS
See Figure 43 though Figure 46
6.6 Switching Characteristics

tPLH, tPHL Propagation Delay 150 200 300 ns
RG = 10 Ω, CG = 10 nF,
tsk-p Pulse Skew |tPHL – tPLH| 50 % duty cycle, 10 kHz input, 1.7 10 ns
tsk-pp Part-to-part skew (1) VCC2 – VEE = 30 V, 45 ns
VE – VEE = 0 V, See Figure 16
tsk2-pp Part-to-part skew (2) –50 50 ns
through Figure 19, Figure 26,
tr Output signal rise time Figure 47, Figure 49, and 55 ns
Figure 50
tf Output signal fall time 10 ns
tDESAT (90%) DESAT sense to 90% VOUT delay 300 550 ns
tDESAT (10%) DESAT sense to 10% VOUT delay RG = 10 Ω, CG = 10 nF, 1.8 2.3 μs
VCC2 – VEE-P = 30 V,
tDESAT (FAULT) DESAT sense to FAULT low output delay 290 550 ns
VE – VEE-P = 0 V, See Figure 20
DESAT sense to DESAT low propagation through Figure 25, Figure 48 and
tDESAT (LOW) 180 ns
delay Figure 51
tRESET (FAULT) RESET to high-level FAULT signal delay 3 8.2 13 μs
tUVLO (ON) UVLO to VOUT high delay 1ms ramp from 0 V to 30 V 4 μs
tUVLO (OFF) UVLO to VOUT low delay 1ms ramp from 30 V to 0 V 6 μs
Failsafe output delay time from input power
tFS 2.8 μs
loss
(1) tsk-pp is the maximum difference in same edge propagation delay times (either VIN+ to VOUT or VIN– to VOUT) between two devices
operating at the same supply voltage, same temperature, and having identical packages and test circuits.
ìé (
ï ëtP HL-ma x VCC1, VCC2, TA )- ( )
tPHL -m in VCC1, VCC2,TA ûù,ïü
i.e. max í ý
(
ï ëétP LH-ma x VCC1, VCC2, TA
î )- ( )
tPL H-m in VCC1, VCC2,TA ûù ï
þ
(2) tsk2-pp is the propagation delay difference in high-to-low to low-to-high transition ( any of the combinations VIN+ to VOUT or VIN– to VOUT)
between two devices operating at the same supply voltage, same temperature, and having identical packages and test circuits.
i.e. min = tPHL-min (VCC1, VCC2,TA ) - tPLH-max (VCC1 ,VCC2 ,TA )
max = tP HL -ma x (VCC1, VCC2,TA ) - tPL H-min (VCC1, VCC2,TA )

ISO5500
6.7 Typical Characteristics
8 7
7
6
ICC1 - Supply Current (mA)

6
5
5
4 4
3
3
2
VCC1 = 3 V VCC1 = 4.5 V
1 2 VCC1 = 3.3 V
VCC1 = 3.3 V VCC1 = 5 V
VCC1 = 3.6 V VCC1 = 5.5 V VCC1 = 5 V
0 1
-40 -20 0 20 40 60 80 100 120 140 0 50 100 150 200 250 300
o
Ambient Temperature ( C) Input Frequency (KHz)
Figure 1. VCC1 Supply Current vs. Temperature Figure 2. VCC1 Supply Current vs. Frequency
12 12
No Load
11
11

10
10
9
8 9
7
8
6
VCC2 = 15 V VCC2 = 15 V
7
5 VCC2 = 20 V VCC2 = 20 V
VCC2 = 30 V VCC2 = 30 V
4 6
-40 -20 0 20 40 60 80 100 120 140 0 50 100 150 200 250 300
o
Ambient Temperature ( C) Input Frequency (KHz)
Figure 3. VCC2 Supply Current vs. Temperature Figure 4. VCC2 Supply Current vs. Frequency
70 0
RG = 10 W
fINP = 20 kHz -0.1
IEH, IEL - Supply Current (mA)
60
50 -0.2
-0.3
40
-0.4
30
-0.5
20
-0.6 IEH, VE - VEE = 0 V
IEH, VE - VEE = 15 V
10 VCC2 = 15 V -0.7 IEL, VE - VEE = 0 V
VCC2 = 30 V IEL, VE - VEE = 15 V
0 -0.8
0 20 40 60 80 100 -40 -20 0 20 40 60 80 100 120 140
o
Load Capacitance (nF) Ambient Temperature ( C)
Figure 5. VCC2 Supply Current vs. Load Capacitance Figure 6. VE Supply Current vs. Temperature

ISO5500
Typical Characteristics (continued)

0 8
VOUT = 2.5 V
-0.5 VOUT = 15 V
7
IOH - Output Drive Current (A)
IOL - Output Sink Current (A)

-1
6
-1.5
-2 5
-2.5 4
-3
3
-3.5
2
-4
VOUT = VC - 4 V 1
-4.5
VOUT = VC - 15 V
-5 0
-40 -20 0 20 40 60 80 100 120 140 -40 -20 0 20 40 60 80 100 120 140
o o
Ambient Temperature ( C) Ambient Temperature ( C)
Figure 7. Output Drive Current vs. Temperature Figure 8. Output Sink Current vs. Temperature
160 0.1
VOH - VC - High Output Voltage Drop (V)

150 -0.1
IOF - Output Sink Current During
a Fault Condition (mA)
140 -0.3
130 -0.5
120 -0.7
110 -0.9
100 -1.1
TA = -40oC
90 TA = 25oC -1.3 IOUT = -650 mA
TA = 125oC IOUT = -100 mA
80 -1.5
0 5 10 15 20 25 30 -40 -20 0 20 40 60 80 100 120 140
o
Output Voltage (V) Ambient Temperature ( C)
Figure 9. Output Sink Current During a Fault Condition Figure 10. High Output Voltage Drop vs. Temperature
vs. Output Voltage
30 0.35
TA = -40oC
IOUT = 100 mA
29.5 TA = 25oC
VOH - High Output Voltage (V)
TA = 125oC
VOL - Low Output Voltage (V)
29 0.3
28.5
28 0.25
27.5
27 0.2
26.5
26 0.15
25.5
25 0.1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.5 -40 -20 0 20 40 60 80 100 120 140
o
Output Drive Current (A) Ambient Temperature ( C)
Figure 11. High Output Voltage vs. Output Drive Current Figure 12. Low Output Voltage vs. Temperature

ISO5500

6 -0.15
ICHG - Blanking Capacitor Charging

-0.17
5
-0.19
VOL - Low Output Voltage (V)
-0.21
4
Current (mA)
-0.23
3 -0.25
-0.27
2
-0.29
TA = -40oC -0.31
1
TA = 25oC -0.33
TA = 125oC
0 -0.35
0 0.5 1 1.5 2 2.5 -40 -20 0 20 40 60 80 100 120 140
o
Output Sink Current (A) Ambient Temperature ( C)
Figure 13. Low Output Voltage vs. Output Sink Current Figure 14. Blanking Capacitance Charging Current vs.
Temperature
7.9 240
RG = 10 W,
7.7 CL = 10 nF
VDSTH - Desat Threshold (V)
230
Propagation Delay (ns)

7.5
220
7.3
210
7.1
200
6.9 tPLH at VCC1 = 3.3 V
tPHL at VCC1 = 3.3 V
6.7 190 tPLH at VCC1 = 5 V
tPHL at VCC1 = 5 V
6.5 180
-40 -20 0 20 40 60 80 100 120 140 -40 -20 0 20 40 60 80 100 120 140
o o
Ambient Temperature ( C) Ambient Temperature ( C)
Figure 15. DESAT Threshold vs. Temperature Figure 16. Propagation Delay vs. Temperature
225 230
RG = 10 W, RG = 10 W,
CL = 10 nF 225 CL = 10 nF
220
220
215
215
210
210
205
200 tPLH at VCC1 = 3.3 V

205 tPHL at VCC1 = 3.3 V
tPLH 195 tPLH at VCC1 = 5 V
tPHL tPHL at VCC1 = 5 V
200 190
3 3.5 4 4.5 5 5.5 14 16 18 20 22 24 26 28 30
VCC1 Supply Voltage (V) VCC2 Supply Voltage (V)
Figure 17. Propagation Delay vs. VCC1 Supply Voltage Figure 18. Propagation Delay vs. VCC2 Supply Voltage

ISO5500

1400 450
RG = 10 W RG = 10 W,
Desat Sense to 90% VOUT Delay (ns)

1200 CL = 10 nF
400
1000
350
800
300
600
250
400 tPLH at VCC1 = 3.3 V
tPHL at VCC1 = 3.3 V
200
200 tPLH at VCC1 = 5 V VCC2 = 15 V
tPHL at VCC1 = 5 V VCC2 = 30 V
0 150
0 10 20 30 40 50 60 70 80 90 100 -40 -20 0 20 40 60 80 100 120 140
o
Figure 19. Propagation Delay vs. Load Capacitance Figure 20. DESAT Sense to 90% VOUT Delay vs Temperature
1600 2.5
RG = 10 W
Desat Sense to 10% VOUT Delay (ms)

Desat Sense to 90% VOUT Delay (ns)
RG = 10 W,
1400 CL = 10 nF
2
1200
1000 1.5
800
600 1
400
0.5
200 VCC2 = 15 V VCC2 = 15 V
VCC2 = 30 V VCC2 = 30 V
0 0
0 10 20 30 40 50 60 70 80 90 100 -40 -20 0 20 40 60 80 100 120 140
o
Figure 21. DESAT Sense to 90% VOUT Delay vs Load Figure 22. DESAT Sense to 10% VOUT Delay vs Temperature
Capacitance
18 450
RG = 10 W
Desat Sense to 10% VOUT Delay (ms)
Desat Sense to Fault Low Delay (ns)
15
400
14
12 350
10
300
8
6 250
4
VCC2 = 15 V
200 VCC2 = 15 V
2
VCC2 = 30 V VCC2 = 30 V
0 150
0 10 20 30 40 50 60 70 80 90 100 -40 -20 0 20 40 60 80 100 120 140
o
Figure 23. DESAT Sense to 10% VOUT Delay vs Load Figure 24. DESAT Sense to Fault Low Delay vs Temperature
Capacitance

ISO5500

10
VCC2 - VEE = 30 V
9.5
R G = 0 W,
9
Reset to Fault Delay (ms)
CL = 10 nF
8.5
8
7.5
7 VCC1 = 3 V
VCC1 = 3.3 V
5 V / div
6.5
VCC1 = 3.6 V
6 VCC1 = 4.5 V
5.5 VCC1 = 5 V
VCC1 = 5.5 V
5
-40 -20 0 20 40 60 80 100 120 140
o
Ambient Temperature ( C)
Time 125 ns / div
Figure 25. Reset to Fault Delay vs Temperature Figure 26. Output Waveform
3
ICH, ICL - Supply Current (mA)
2.5
1.5
ICH, IOUT = -500 mA

1
ICH, IOUT = -1 mA
ICL, IOUT = -1 mA
0.5 ICL, IOUT = -2 mA
0
-40 -20 0 20 40 60 80 100 120 140
o
Ambient Temperature ( C)
Figure 27. VC Supply Current vs. Temperature

ISO5500
7 Parameter Measurement Information
1 1
VIN+ VE 16 VIN+ VE 16
ICC1
ICC1
0.1 2 0.1 2
5.5 V µF VIN- VEE-L 15 5.5 V µF VIN- VEE-L 15
3 3
VCC1 DESAT 14 VCC1 DESAT 14
4 4
GND1 VCC2 13 GND1 VCC2 13
5 5
RESET VC 12 RESET VC 12
6 6
FAULT VOUT 11 FAULT VOUT 11
7 7
NC VEE-L 10 NC VEE-L 10
8 8
GND1 VEE-P 9 GND1 VEE-P 9
Figure 28. ICC1H Test Circuit Figure 29. ICC1L Test Circuit
1 16 16
VIN+ VE 1 VIN+ VE
0.1 2 15 15
5V µF VIN- VEE-L 2 VIN- VEE-L
3 14 14
VCC1 DESAT 3 VCC1 DESAT
ICC2 ICC2
4 13 13
GND1 VCC2 4 GND1 VCC2
IC IC
5 12 12
RESET VC 5 RESET VC
30 V
6 11 0.1 11 30 V 0.1
FAULT VOUT µF 6 FAULT VOUT µF
7 VEE-L 10 10
NC IOUT 7 NC VEE-L
8 9 9
GND1 VEE-P 8 GND1 VEE-P
Figure 30. ICC2H, ICH Test Circuit Figure 31. ICC2L, ICL Test Circuit
1 16 1 16
VIN+ VE VIN+ VE
0.1 2 15 0.1 0.1 2 15
5V µF VIN- VEE-L 5.5 V µF VIN- VEE-L
µF
3 14 V1 3 14
VCC1 DESAT Sweep VCC1 DESAT
4 13 0.1 4 13
GND1 VCC2 µF GND1 VCC2
5 12 5 12
RESET VC V2
RESET VC
0.1
6 11 VOUT µF 5.5 V 6 11 30 V 0.1
FAULT VOUT FAULT VOUT µF
IFAULT
7 10 7 10
NC VEE-L NC VEE-L
8 9 8 9
GND1 VEE-P GND1 VEE-P
Figure 32. VIT(UVLO) Test Circuit Figure 33. IFH Test Circuit

ISO5500
Parameter Measurement Information (continued)

1 16 1 16
VIN+ VE VIN+ VE
0.1 2 15 0.1 2 15
3V µF VIN- VEE-L 5V µF VIN- VEE-L
3 14 3 14
VCC1 DESAT VCC1 DESAT
4 13 4 13 VPULSE
GND1 VCC2 GND1 VCC2
5 12 5 12
RESET VC RESET VC 0.1 4.7
30 V µF µF
0.4 V 6 11 30 V 0.1 6 11
FAULT VOUT µF FAULT VOUT
IFAULT IOUT
7 10 7 10
NC VEE-L NC VEE-L
8 9 8 9
Figure 34. IFL Test Circuit Figure 35. IOH Test Circuit
16 1 16
1 VIN+ VE VIN+ VE
15 0.1 2 15
2 VIN- VEE-L 5V µF VIN- VEE-L
14 3 14
3 VCC1 DESAT VCC1 DESAT
13 4 13
4 GND1 VCC2 GND1 VCC2
12 5 12 0.1
5 RESET VC 0.1 4.7 RESET VC µF
30 V 30 V
VPULSE µF µF IOUT
11 6 11
6 FAULT VOUT FAULT VOUT
IOUT
14 V
7 NC VEE-L 10 7
NC VEE-L
10
9 8 9
8 GND1 VEE-P GND1 VEE-P
Figure 36. IOL Test Circuit Figure 37. IOF Test Circuit
1 16 1 16
VIN+ VE VIN+ VE
0.1 2 15 0.1 2 15
3 14 3 14
4 13 4 13
GND1 VCC2 GND1 VCC2
5 12 VOUT 0.1 5 12 100 0.1
RESET VC µF RESET VC mA µF
30 V 30 V
6 11 6 11
FAULT VOUT FAULT VOUT
VOUT
7 10 7 10
NC VEE-L IOUT NC VEE-L
8 9 8 9
Figure 38. VOH Test Circuit Figure 39. VOL Test Circuit

ISO5500

IE IE
1 16 1 16
VIN+ VE VIN+ VE
0.1 2 15 0.1 0.1 2 15 0.1
µF µF
3 14 3 14
VCC1 DESAT V1 VCC1 DESAT V1
4 13 0.1 4 13 0.1
GND1 VCC2 µF GND1 VCC2 µF
5 12 5 12
RESET VC V2
RESET VC V2
0.1 0.1
6 11 µF 6 11 µF
7 10 7 10
NC VEE-L NC VEE-L
8 9 8 9
Figure 40. IEH Test Circuit Figure 41. IEL Test Circuit
1 16 1 16
VIN+ VE VIN+ VE
0.1 SWEEP 0.1
5V 2 15 0.1 5V 2 15
µF VIN- VEE-L µF VIN- VEE-L
µF
3 14 3 14
VCC1 DESAT V1
VCC1 DESAT
IDESAT
4 13 0.1 4 13
GND1 VCC2 µF GND1 VCC2
5 12 5 12
RESET VC 3k RESET VC
V2
0.1 0.1 4.7 30 V
6 11 µF 6 11 µF µF
FAULT VOUT SCOPE FAULT VOUT
7 10 7 10
NC VEE-L 100 pF NC VEE-L 10 W
8 9 8 9
GND1 VEE-P GND1 VEE-P 10
nF
VCM
Figure 42. ICHG, IDSCHG, VDSTH Test Circuit Figure 43. CMTI VFH Test Circuit
1 16 1 16
VIN+ VE VIN+ VE
0.1 2 15 0.1 2 15
3 14 3 14
4 13 4 13
GND1 VCC2 GND1 VCC2
5 12 5 12
3k RESET VC 3k RESET VC SCOPE
0.1 4.7 30 V 0.1 4.7 30 V
6 11 µF µF 6 11 µF µF
SCOPE FAULT VOUT FAULT VOUT
7 10 100 pF 7 10
100 pF NC VEE-L 10 W NC VEE-L 10 W
8 9 8 9
GND1 VEE-P 10 GND1 VEE-P 10
nF nF
VCM VCM
Figure 44. CMTI VFL Test Circuit Figure 45. CMTI VOH Test Circuit

ISO5500
1 16 1 16
VIN+ VE VIN VIN+ VE
0.1 2 15
5V µF 2 15
VIN- VEE-L GND1 VIN- VEE-L
3 14 3 14
4 13 4 13
GND1 VCC2 GND1 VCC2
0.1 VOUT
5 12 5V µF 5 12
3k RESET VC SCOPE RESET VC 0.1 4.7
V1 µF µF
0.1 4.7 30 V 3k
6 11 µF µF 6 11
10 W
100 pF 7 10 7 10
NC VEE-L 10 W NC VEE-L 10
nF
8 9 8 9
GND1 VEE-P 10 GND1 VEE-P
nF
VCM
Figure 46. CMTI VOL Test Circuit Figure 47. tPLH, tPHL, tr, tf Test Circuit
1 16 VIN- 0V
VIN+ VE 100
VIN
2 15 pF
0.1
VIN- VEE-L µF
3 14 VIN+ 50 % 50 %
VCC1 DESAT V1 0.1
DESAT µF
4 13 tr tf
GND1 VCC2
5 12 VOUT
RESET VC 0.1 4.7
V2 90%
µF µF
6 11
FAULT VOUT
5V
3k 10 W 50%
7 10
NC VEE-L 10
0.1
nF
VOUT 10%
µF 8 9
GND1 VEE-P
tPLH tPHL
Figure 48. tDESAT, tRESET Test Circuit Figure 49. VOUT Propagation Delay, Non-inverting
Configuration
A.
VIN- tDESAT (FAULT )

tDESAT (10%)
50 % 50 % 7.2V tDESAT (LOW)
VDESAT 50%
VIN+ VCC1 tDESAT (90%)
90%
VOUT
tr tf
10%
90%
FAULT 50 % 50 %
50% tRESET (FAULT )
RESET 50%
VOUT 10%
tPLH tPHL
Figure 50. VOUT Propagation Delay, Inverting Figure 51. DESAT, VOUT, FAULT, RESET Delays
Configuration

ISO5500
8 Detailed Description
8.1 Overview
The ISO5500 is an isolated gate driver for IGBTs and MOSFETs with power ratings of up to IC = 150 A and VCE
= 600 V. Input TTL logic and output power stage are separated by a capacitive, silicon dioxide (SiO2), isolation
barrier.
The IO circuitry on the input side interfaces with a micro controller and consists of gate drive control and RESET
inputs, and FAULT alarm output. The power stage consists of power transistors to supply 2.5 A pullup and
pulldown currents to drive the capacitive load of the external power transistors, as well as DESAT detection
circuitry to monitor IGBT collector-emitter overvoltage under short circuit events. The capacitive isolation core
consists of transmit circuitry to couple signals across the capacitive isolation barrier, and receive circuitry to
convert the resulting low-swing signals into CMOS levels. The ISO5500 also contains undervoltage lockout
circuitry to prevent insufficient gate drive to the external IGBT, and soft turnoff feature which ensures graceful
reduction in IGBT current to zero when a short-circuit is detected.
8.2 Functional Block Diagram
VCC1
VREG ISO5500
- VCC2
VIN+ UVLO
+ VC
V IN- + DESAT
Gate DESAT 12 .3V
Drive -
ISO - Barri er
DELAY
and
7.2 V Q1b Q1a
Fault Q4
Logic VOUT
FAULT
Q S
VE
R
RESET Q3
Q2b Q2a
VEE-P
GND1
VEE-L

ISO5500
8.3 Feature Description

Table 1. Package Characteristics
(1) Shortest terminal to terminal distance
L(I01) Minimum air gap (clearance ) 8.3 mm
through air
Shortest terminal to terminal distance
L(I02) Minimum external tracking (creepage (1)) 8.1 mm
across the package surface
Minimum internal gap (internal clearance) Distance through the insulation 0.012 mm
CTI Tracking resistance (comparative tracking index) DIN IEC 60112 / VDE 0303 Part 1 400 V
(2) 12
RIO Isolation resistance Input to output, VIO = 500 V >10 Ω
CIO Barrier capacitance input-to-output VIO = 0.4 sin (2πft), f = 1 MHz (2) 1.25 pF
VI = VCC/2 + 0.4 sin (2π ft), f = 2 MHz,
CI Input capacitance to ground 2 pF
VCC = 5V
(1) Creepage and clearance requirements should be applied according to the specific equipment isolation standards of an application. Care
should be taken to maintain the creepage and clearance distance of a board design to ensure that the mounting pads of the isolator on
the printed circuit board do not reduce this distance.space
Creepage and clearance on a printed circuit board become equal according to the measurement techniques shown in the isolation
glossary. Techniques such as inserting grooves and/or ribs on a printed circuit board are used to help increase their specification.
(2) All pins on each side of the barrier tied together creating a two-terminal device
8.3.1 Insulation Characteristics for DW-16 Package

Over recommended operating conditions (unless noted otherwise)
PARAMETER TEST CONDITIONS SPECIFICATION UNIT

Maximum working insulation voltage per DIN
VIORM 679/480
V VDE V 0884-10 (VDE V 0884-10)
After Input/Output safety test subgroup 2/3,
VPR = 1.2 x VIORM, t = 10 sec, 816/576
Partial discharge < 5 pC
Method a, After environmental tests subgroup 1,
Input to output test voltage per DIN V VDE V
VPR VPR = 1.6 × VIORM, t = 10 sec (qualification) 1088/768
0884-10 (VDE V 0884-10)
Partial discharge < 5pC VPEAK/
VRMS
Method b1, 100% Production test,
VPR = 1.875 × VIORM, t = 1 sec 1275/900
Partial discharge < 5pC
Transient overvoltage per DIN V VDE V VTEST = VIOTM, t = 60 sec (qualification), t = 1 sec
VIOTM 6000/4243
0884-10 (VDE V 0884-10) (100% production)
VTEST = VISO, t = 60 sec (qualification) 6000/4243
VISO Isolation voltage per UL 1577
VTEST = 1.2 × VISO, t = 1 sec (100% production) 7200/5092
RS Insulation resistance VIO = 500 V at TS = 150°C > 109 Ω
Pollution degree 2
8.3.2 Regulatory Information
VDE CSA UL
Certified according to DIN V VDE V 0884-10 Approved under CSA Component Recognized under 1577 Component
(VDE V 0884-10) Acceptance Notice 5A Recognition Program
Basic Insulation
Basic and Reinforced Insulation per CSA (1)
Maximum Transient Overvoltage, 6000 VPK Single Protection, 4243 VRMS
60950-1-07 and IEC 60950-1 (2nd Ed)
Maximum Working Voltage, 680 VPK
Certificate Number: 40016131 Master Contract Number: 220991 File Number: E181974
(1) Production tested ≥ 5092 VRMS for 1 second in accordance with UL 1577.

ISO5500
8.3.3 IEC 60664-1 Rating Table
PARAMETER TEST CONDITIONS SPECIFICATION

Basic Isolation Group Material Group II
Rated Mains Voltage ≤ 300 VRMS I-IV
Installation Classification
Rated Mains Voltage ≤ 600 VRMS I-III
8.3.4 Isolation Lifetime at a Maximum Continuous Working Voltage
PARAMETER LIFETIME SPECIFICATION UNIT

20 years 679/480
Bipolar AC Voltage 25 years 657/465 VPEAK/VRMS
50 years 601/425
8.3.5 Safety Limiting Values

Safety limiting intends to prevent potential damage to the isolation barrier upon failure of input or output circuitry.
A failure of the I/O can allow low resistance to ground or the supply and, without current limiting, dissipate
sufficient power to overheat the die and damage the isolation barrier, potentially leading to secondary system
failures.

θJA = 76°C/W, VI = 3.6 V, TJ = 170°C, TA = 25°C 530
IS Safety Limiting Current θJA = 76°C/W, VI = 5.5 V, TJ = 170°C, TA = 25°C 347 mA
θJA = 76°C/W, VI = 30 V, TJ = 170°C, TA = 25°C 64
TS Case Temperature 150 °C
The safety-limiting constraint is the absolute-maximum junction temperature specified in the Absolute Maximum
Ratings table. The power dissipation and junction-to-air thermal impedance of the device installed in the
application hardware determines the junction temperature. The assumed junction-to-air thermal resistance in the
Thermal Information table is that of a device installed in the High-K Test Board for Leaded Surface-Mount
Packages. The power is the recommended maximum input voltage times the current. The junction temperature is
then the ambient temperature plus the power times the junction-to-air thermal resistance.
Safety Limiting Current - mA
600
500
VCC1 = 3.6V
400
300
VCC1 = 5.5V
200
VCC2 - VEE-P = 30 V
100
0
0 50 100 150 200
Case Temperature - oC
Figure 52. DW-16 θJC Thermal Derating Curve per DIN V VDE V 0884-10 (VDE V 0884-10)

ISO5500
8.3.6 Behavioral Model

Figure 53 and Figure 54 show the detailed behavioral model of the ISO5500 for a non-inverting input
configuration and its corresponding timing diagram for normal operation, fault condition, and Reset.
+HV
ISO5500 DESAT 14
+
1 VIN+
PWM
DIS ISO - CBLK
7.2V
270 μA
2 VIN-
VCC2 13
-
UVLO
μC
ISO - Barrie r
DELAY +
VREG
12.3V
3 VCC1 VC 12
3.3V
15V
to Q1b Q1a
5V
VOUT 11
6 FAULT
I/P
FAULT
Q S
R VE 16
5 RESET Q3
O/P
Q2b Q2a
15V
LOAD
4,8 GND1
VREG VCC2 VEE-P 9
VEE-L 10,15
-HV
Figure 53. ISO5500 Behavioral Model
Normal Operation Fault Condition Reset Normal Operation
VIN+ 5
ISO
4
7.2V
VDESAT
VOUT
FAULT
3
De
2
lay
1
DIS
FAULT
RESET
6
Figure 54. Complete Timing Diagram

ISO5500
8.3.7 Power Supplies

VCC1 and GND1 are the power supply input and output for the input side of the ISO5500. The supply voltage at
VCC1 can range from 3 V up to 5.5 V with respect to GND1, thus supporting the direct interface to state-of-the-art
3.3 V low-power controllers as well as legacy 5 V controllers.
VCC2, VEE-P and VEE-L are the power supply input and supply returns for the output side of the ISO5500. VEE-P is
the supply return for the output driver and VEE-L is the return for the logic circuitry. With VEE-P as the main
reference potential, VEE-L should always be directly connected to VEE-P. The supply voltage at VCC2 can range
from 15 V up to 30 V with respect to VEE-P.
A third voltage input, VE, serves as reference voltage input for the internal UVLO and DESAT comparators. VE
also represents the common return path for the gate voltage of the external power device. The ISO5500 is
designed for driving MOSFETs and IGBTs. Because MOSFETs do not require a negative gate-voltage, the
voltage potential at VE with respect to VEE-P can range from 0 V for MOSFETs and up to 15 V for IGBTs.
ISO5500 ISO5500
VCC2 VCC2
VCC1 VC +15 V VCC1 VC +15 V

15V 15 V-30 V
3 V - 5.5 V 3 V - 5.5 V
ISOLATION
ISOLATION
Power Device Power Device
VE VE
Common Common
GND1 0 V-15 V GND1
0 V-15 V
0-(-15 V) -15 V
VEE-P VEE-P
VEE-L VEE-L
Figure 55. Power Supply Configurations
The output supply configuration on the left uses symmetrical ±15 V supplies for VCC2 and VEE-P with respect to
VE. This configuration is mostly applied when deriving the output supply from the input supply via an isolated DC-
DC converter with symmetrical voltage outputs. The configuration on the right, having both supplies referenced to
VEE-P, is found in applications where the device output supply is derived from the high-voltage IGBT supplies.
8.3.8 Control Signal Inputs

The two digital, TTL control inputs, VIN+ and VIN–, allow for inverting and non-inverting control of the gate driver
output. In the non-inverting configuration VIN+ receives the control input signal and VIN– is connected to GND1. In
the inverting configuration VIN– is the control input while VIN+ is connected to VCC1.
ISO5500 ISO5500
VIN+ VCC1
VCC1 VCC1
3 V - 5.5 V VIN+
3 V - 5.5 V
VIN-
PWM VIN+ VIN- GND1 VIN+
ISOLATION
ISOLATION
VIN- PWM VIN-
GND1 GND1
VOUT VOUT
Figure 56. Non-inverting (left) and Inverting (right) Input Configurations

ISO5500
8.3.9 Output Stage

The output stage provides the actual IGBT gate drive by switching the output voltage pin, VOUT, between the
most positive potential, typically VCC2, and the most negative potential, VEE-P.
VCC2
ISO5500 VC
VIN+
15V
Q1b Q1a
30V
On
VOUT Q3
VOUT Q1 Q2 Q1
Gate
Drive 0V Q2
VGE
Off
Q3 VE
Slow +15V
Q2b Q2a
Off 15V
VE VE
VEE-P VGE
-15V
VEE-L
Figure 57. Output Stage Design and Timing
This stage consists of an upper transistor pair (Q1a and Q1b) turning the IGBT on, and a lower transistor pair
(Q2a and Q2b) turning the IGBT off. Each transistor pair possesses a bipolar transistor for high current drive and
a MOSFET for close-to-rail switching capability.
An additional, weak MOSFET (Q3) is used to softly turn-off the IGBT in the event of a short circuit fault to
prevent large di/dt voltage transients which potentially could damage the output circuitry.
The output control signals, On, Off, and Slow-Off are provided by the gate-drive and fault-logic circuit which also
includes a break-before-make function to prevent both transistor pairs from conducting at the same time.
By introducing the reference potential for the IGBT emitter, VE, the final IGBT gate voltage, VGE, assumes
positive and negative values with respect to VE.
A positive VGE of typically 15 V is required to switch the IGBT well into saturation while assuring the survival of
short circuit currents of up to 5–10 times the rated collector current over a time span of up to 10 μs.
Negative values of VE, ranging from a required minimum of –5 V up to a recommended –15 V, are necessary to
keep the IGBT turned off and to prevent it from unintentional conducting due to noise transients, particularly
during short circuit faults. As previously mentioned, MOSFETs do not require a negative gate-voltage and thus
allow the VE-pin to be directly connected to VEE-P.
The timing diagram in Figure 57 shows that during normal operation VOUT follows the switching sequence of VIN+
(here shown for the non-inverting input configuration), and only the Q1 and Q2 transistor pairs applying VCC2 and
VEE-P potential to the VOUT-pin respectively.
In the event of a short circuit fault, however, while the IGBT is actively driven, the Q1 pair is turned off and Q3
turns on to slowly reduce VOUT in a controlled manner down to a level of approximately 2 V above VEE-P. At this
voltage level, the strong Q2 pair then conducts holding VOUT at VEE-P potential.
8.3.10 Undervoltage Lockout (UVLO)

The Under Voltage Lockout feature prevents the application of insufficient gate voltage (VGE-ON) to the power
device by forcing VOUT low (VOUT = VEE-P) during power-up and whenever else VCC2 – VE drops below 12.3 V.
IGBTs and MOSFETs typically require gate voltages of VGE = 15 V to achieve their rated, low saturation voltage,
VCES. At gate voltages below 13 V typically, their VCE-ON increases drastically, especially at higher collector
currents. At even lower voltages, i.e. VGE < 10 V, an IGBT starts operating in the linear region and quickly
overheats. Figure 58 shows the principle operation of the UVLO feature.

ISO5500
VCC2 12.3V
VCC2
- 11.1V
UVLO VC 2V
+
On 15V
VIN+
Gate 12.3V Q1b Q1a
Drive VOUT
VGE
Failsafe
VE VOUT Low Q1 Q2 Q1 Q2 Q1
0V
Off
R PD Q2
Q2b Q2a 15V VE
+15V
ISO5500 VEE-P VE
VGE
VEE-L -15V
Figure 58. Undervoltage Lockout (UVLO) Function
Because VCC2 with respect to VE represents the gate-on voltage, VGE-ON = VCC2 – VE, the UVLO comparator
compares VCC2 to a 12.3 V reference voltage that is also referenced to VE via the connection of the ISO5500 VE-
pin to the emitter potential of the power device.
The comparator hysteresis is 1.2 V typical and the typical values for the positive and negative going input
threshold voltages are VTH+ = 12.3 V and VTH– = 11.1 V.
The timing diagram shows that at VCC2 levels below 2 V VOUT is 0 V. Because none of the internal circuitry
operates at such low supply levels, an internal 100 kΩ pull-down resistor is used to pull VOUT down to VEE-P
potential. This initial weak clamping, known as failsafe-low output, strengthens with rising VCC2. Above 2 V the
Q2-pair starts conducting gradually until VCC2 reaches 12.3 V at which point the logic states of the control inputs
VIN+ and VIN– begin to determine the state of VOUT.
Another UVLO event takes place should VCC2 drop slightly below 11 V while the IGBT is actively driven. At that
moment the UVLO comparator output causes the gate-drive logic to turn off Q1 and turn on Q2. Now VOUT is
clamped hard to VEE-P. This condition remains until VCC2 returns to above 12.3 V and normal operation
commences.
NOTE
An Undervoltage Lockout does not indicate a Fault condition.
8.3.11 Desaturation Fault Detection (DESAT)

The DESAT fault detection prevents IGBT destruction due to excessive collector currents during a short circuit
fault. Short circuits caused by user misconnect, bad wiring, or overload conditions induced by the load can cause
a rapid increase in IGBT current, leading to excessive power dissipation and heating. IGBTs become damaged
when the current load approaches the saturation current of the device and the collector-emitter voltage, VCE,
rises above the saturation voltage level, VCE-sat. The drastically increased power dissipation overheats and
destroys the IGBT.
To prevent damage to IGBT applications, the implemented fault detection slowly reduces the overcurrent in a
controlled manner during the fault condition.

ISO5500
VCC2
VC
ISO5500 15V
DESAT VIN+
+
DESAT
-
CBLK 7.2V
On VDESAT Q4
Gate 7.2V Q1b Q1a

Drive
VOUT VCE
Dschg Q4
VE VOUT
Fault Off
Slow Q3
Off
Q2b Q2a 15V
Fault
VEE-P
VEE-L
Figure 59. DESAT Fault Detection and Protection
The DESAT fault detection involves a comparator that monitors the IGBT’s VCE and compares it to an internal 7.2
V reference. If VCE exceeds this reference voltage, the comparator causes the gate-drive and fault-logic to initiate
a fault shutdown sequence. This sequence starts with the immediate generation of a fault signal, which is
transmitted across the isolation barrier towards the Fault indicator circuit at the input side of the ISO5500.
At the same time the fault logic turns off the power-pair Q1 and turns on the small discharge MOSFETs, Q3 and
Q4. Q3 slowly discharges the IGBT gate voltage which causes the high short-circuit current through the IGBT to
gradually decrease, thereby preventing large di/dt induced voltage transients. Q4 discharges the blanking
capacitor. Once VOUT is sufficiently close to VEE-P potential (at approximately 2 V), the large Q2-pair turns on in
addition to Q3 to clamp the IGBT gate to VEE-P.
NOTE
The DESAT detection circuit is only active when the IGBT is turned on. When the IGBT is
turned off, and its VCE is at maximum, the fault detection is simply disabled to prevent
false triggering of fault signals.
8.3.12 DESAT Blanking Time

The DESAT fault detection must remain disabled for a short time period following the turn-on of the IGBT to allow
its collector voltage to drop below the 7.2 V DESAT threshold. This time period, called the DESAT blanking time,
tBLK, is controlled by an internal charge current of ICHG = 270 μA, the 7.2 V DESAT threshold, VDSTH, and an
external blanking capacitor, CBLK.
The nominal blanking time with a recommended capacitor value of CBLK = 100 pF is calculated with:
CBL K ´ VDSTH 100 pF ´ 7.2 V
tBL K = = = 2.7 μ s
ICHG 270 μA (1)
The capacitor value can be scaled slightly to adjust the blanking time. However, because the blanking capacitor
and the DESAT diode capacitance build a voltage divider that attenuates large voltage transients at DESAT,
CBLK values smaller than 100 pF are not recommended. The nominal blanking time also represents the ISO5500
maximum response time to a DESAT fault condition.
If a short circuit condition exists prior to the turn-on of the IGBT, (causing the IGBT switching into a short) the soft
shutdown sequence begins after approximately 3 μs. However, if a short circuit condition occurs while the IGBT
is already on, the response time is significantly shorter due to the parasitic parallel capacitance of the DESAT
diode. The recommended value of 100 pF however, provides sufficient blanking and fault response times for
most applications.

ISO5500
The timing diagram in Figure 59 shows the DESAT function for both, normal operation and a short-circuit fault
condition. The use of VIN+ as control input implies non-inverting input configuration.
During normal operation VDESAT will display a small sawtooth waveform every time VIN+ goes high. The ramp of
the sawtooth is caused by the internal current source charging the blanking capacitor. Once the IGBT collector
has sufficiently dropped below the capacitor voltage, the DESAT diode conducts and discharges CBLK through
the IGBT.
In the event of a short circuit fault; however, high IGBT collector voltage prevents the diode from conducting and
the voltage at the blanking capacitor continues to rise until it reaches the DESAT threshold. When the output of
the DESAT comparator goes high, the gate-drive and fault-logic circuit initiates the soft shutdown sequence and
also produces a Fault signal that is fed back to the input side of the ISO5500.
8.3.13 FAULT Alarm

The Fault alarm unit consists of three circuit elements, a RS flip-flop to store the fault signal received from the
gate-drive and fault-logic, an open-drain MOSFET output signaling the fault condition to the micro controller, and
a delay circuit blocking the control inputs after the soft shutdown sequence of the IGBT has been completed.
Figure 60 shows the ISO5500 in a non-inverting input configuration. Because the FAULT-pin is an open-drain
output, it requires a pull-up resistor, RPU, in the order of 3.3 kΩ to 10 kΩ. The internal signals DIS, ISO, and
FAULT represent the input-disable signal, the isolator output signal, and the fault feedback signal respectively.
VCC1 “IGBT
ISO5500 On”
3.3V VIN+ 5
VIN+
PWM ISO
DIS ISO Sh
oc ort 4
VIN- cu
rs
ISO - Barrier
µC RPU FAULT 3
DELAY
De
2
lay
FAULT 1
I/P DIS
FAULT
Q S
R
FAULT
RESET
O/P
RESET 6
GND1
Figure 60. Fault Alarm Circuitry and Timing Sequence
The timing diagram shows that the micro controller initiates an IGBT-on command by taking VIN+ high. After
propagating across the isolation barrier ISO goes high, activating the output stage.
1. Upon a short circuit condition the gate-drive and fault-logic feeds back a fault signal (FAULT = high) which
sets the RS-FF driving the FAULT output active-low.
2. After a delay of approximately 3 μs, the time required to shutdown the IGBT, DIS becomes high and blocks
the control inputs
3. This in turn drives ISO low
4. which, after propagating through the output fault-logic, drives FAULT low.
At this time both flip-flop inputs are low and the fault signal is stored.
5. Once the failure cause has been removed the micro controller must set the control inputs into an "Output-
low" state before applying the Reset pulse.
6. Taking the RESET-input low resets the flip-flop, which removes the fault signal from the controller by pulling
FAULT high and releases the control inputs by driving DIS low

ISO5500
8.4 Device Functional Modes
Table 2. Function Table

UVLO DESAT DETECTED ON PIN 6 (FAULT)
VIN+ VIN- VOUT
(VCC2 – VE) PIN 14 (DESAT) OUTPUT
X X Active X X Low
X X X Yes Low Low
Low X X X X Low
X High X X X Low
High Low Not active No High High

ISO5500
9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information

The ISO5500 is an isolated gate driver for high power devices such as IGBTs and MOSFETs with power ratings
of up to IC = 150 A and VCE = 600 V. It is intended for use in applications such as motor control, industrial
inverters and switched-mode power supplies. In these applications, sophisticated PWM control signals are
required to turn the power-devices on and off, which at the system level eventually may determine, for example,
the speed, position, and torque of the motor or the output voltage, frequency and phase of the inverter. These
control signals are usually the outputs of a micro controller, and are at low voltage levels such as 3.3 V or 5.0 V.
The gate controls required by the MOSFETs and IGBTs, on the other hand, are in the range of 15 V to 30 V, and
need high current capability to be able to drive the large capacitive loads offered by those power transistors. Not
only that, the gate drive needs to be applied with reference to the Emitter of the IGBT (Source for MOSFET), and
by construction, the Emitter node in a gate drive system swings between 0 to the DC bus voltage, which is
several 100s of volts in magnitude.
The ISO5500 is thus used to level shift the incoming 3.3-V and 5.0-V control signals from the microcontroller to
the 15-V to 30-V drive required by the power transistors while ensuring high-voltage isolation between the driver
side and the microcontroller side.
9.2 Typical Application

Figure 61 shows the typical application of a three-phase inverter using six ISO5500 isolated gate drivers. Three-
phase inverters are used for variable-frequency drives to control the operating speed of AC motors and for high
power applications such as High-Voltage DC (HVDC) power transmission.
The basic three-phase inverter consists of three single-phase inverter switches each comprising two ISO5500
devices that are connected to one of the three load terminals. The operation of the three switches is coordinated
so that one switch operates at each 60 degree point of the fundamental output waveform, thus creating a six-
step line-to-line output waveform. In this type of applications carrier-based PWM techniques are applied to retain
waveform envelope and cancel harmonics.
ISOLATION BARRIER
ISO 5500
ISO 5500
1
2
3
PWM 4 ISO 5500
5
6
3-PHASE
INPUT µC
M
ISO 5500
FAULT
ISO 5500
ISO 5500
Figure 61. Typical Motor Drive Application

ISO5500
Typical Application (continued)

9.2.1 Design Requirements
Unlike optocoupler based gate drivers which need external current drivers and biasing circuitry to provide the
input control signals, the input control to the ISO5500 is TTL and can be directly driven by the microcontroller.
Other design requirements include decoupling capacitors on the input and output supplies, a pullup resistor on
the common drain FAULT output signal, and a high-voltage protection diode between the IGBT collector and the
DESAT input. Further details are explained in the subsequent sections.
9.2.2 Detailed Design Procedure
9.2.2.1 Recommended ISO5500 Application Circuit

The ISO5500 has both, inverting and non-inverting gate control inputs, an active low reset input, and an open
drain fault output suitable for wired-OR applications. The recommended application circuit in Figure 62 illustrates
a typical gate drive implementation using the ISO5500.
The four 0.1 μF supply bypass capacitors provide the large transient currents necessary during a switching
transition. Because of the transient nature of the charging currents, low current (20 mA) power supplies for VCC2
and VEE-P suffice. The 100 pF blanking capacitor disables DESAT detection during the off-to-on transition of the
power device. The DESAT diode and its 100 Ω series resistor are important external protection components for
the fault detection circuitry. The 10 Ω gate resistor limits the gate charge current and indirectly controls the IGBT
collector voltage rise and fall times. The open-drain fault output has a passive 3.3 kΩ pull-up resistor and a
330pF filtering capacitor. In this application, the IGBT gate driver will shut down when a fault is detected and will
not resume switching until the micro-controller applies a reset signal.
1 ISO5500 16
V IN+ VE 100 0.1 0.1
2 15 pF μF μF DS (opt.)
V IN- VEE -L
D DESAT
3 14 100 Ω
V CC1 DESAT -
3.3V 0.1 +
μC μF VF
3.3 4 13
GND1 V CC2 Q1
kΩ 4.7 +
5 12 μF
RESET VC 15V VCE
Rg
6 11 -
FAULT VOUT 0.1 3-PHASE
7 10 μF OUTPUT
330 pF NC VEE -L Q2
15V +
8 9
GND1 V EE-P VCE
-
Figure 62. Recommended Application Circuit
9.2.2.2 FAULT Pin Circuitry

The FAULT pin is an open-drain output requiring a 3.3 kΩ pull-up resistor to provide logic high when FAULT is
inactive.
Because fast common mode transients can alter the FAULT-pin voltage during high state, a 330 pF capacitor
connected between FAULT and GND1 is recommended to provide sufficient noise margin at the specified CMTI
of 50 kV/μs. The added capacitance does not increase the FAULT response time during a fault condition.

ISO5500
1 ISO5500
VIN+
2
VIN-
3
0.1
VCC1
µC 5V
µF 4
3.3 GND1
kW
5
RESET
6
FAULT
7
330 pF NC
8
GND1
Figure 63. FAULT Pin Circuitry for High CMTI
9.2.2.3 Driving the Control Inputs

The amount of common-mode transient immunity (CMTI) is primarily determined by the capacitive coupling from
the high-voltage output circuit to the low-voltage input side of the ISO5500. For maximum CMTI performance, the
digital control inputs, VIN+ and VIN–, must be actively driven by standard CMOS or TTL, push-pull drive circuits.
This type of low-impedance signal source provides active drive signals that prevent unwanted switching of the
ISO5500 output under extreme common-mode transient conditions. Passive drive circuits, such as open-drain
configurations using pull-up resistors, must be avoided.
9.2.2.4 Local Shutdown and Reset

In applications with local shutdown and reset, the FAULT output of each gate driver is polled separately, and the
individual reset lines are asserted low independently to reset the motor controller after a fault condition.
1 ISO5500 1 ISO5500
VIN+ VIN+
2 2
VIN- VIN-
3 3
VCC1 VCC1
µC µC
4 4
RF GND1 RF GND1
5 5
RESET RESET
6 6
FAULT FAULT
7 7
NC NC
8 8
GND1 GND1
Figure 64. Local Shutdown and Reset for Noninverting (left) and Inverting Input Configuration (right)
9.2.2.5 Global-Shutdown and Reset

When configured for inverting operation, the ISO5500 can be configured to shutdown automatically in the event
of a fault condition by tying the FAULT output to VIN+. For high reliability drives, the open drain FAULT outputs of
multiple ISO5500 devices can be wired together forming a single, common fault bus for interfacing directly to the
micro-controller. When any of the six gate drivers of a three-phase inverter detects a fault, the active low FAULT
output disables all six gate drivers simultaneously; thereby, providing protection against further catastrophic
failures.

ISO5500
1 ISO5500
VIN+
2
VIN-
3
VCC1
µC
4
GND1
5
RESET
6
FAULT
7
NC
8
to other to other GND1
RESETs FAULTs
Figure 65. Global Shutdown with Inverting Input Configuration
9.2.2.6 Auto-Reset
Connecting RESET to the active control input (VIN+ for non-inverting, or VIN– for inverting operation) configures
the ISO5500 for automatic reset capability. In this case, the gate control signal at VIN is also applied to the
RESET input to reset the fault latch every switching cycle. During normal IGBT operation, asserting RESET low
has no effect on the output. For a fault condition, however, the gate driver remains in the latched fault state until
the gate control signal changes to the 'gate low' state and resets the fault latch.
If the gate control signal is a continuous PWM signal, the fault latch will always be reset before VIN+ goes high
again. This configuration protects the IGBT on a cycle by cycle basis and automatically resets before the next
'on' cycle. When the ISO5500 is configured for Auto Reset, the specified minimum FAULT signal pulse width is
3 μs.
1 ISO5500 1 ISO5500
VIN+ VIN+
2 2
VIN- VIN-
3 3
VCC1 VCC1
µC µC
4 4
GND1 GND1
5 5
RESET RESET
6 6
FAULT FAULT
7 7
NC NC
8 8
GND1 GND1
Figure 66. Auto Reset for Non-inverting and Inverting Input Configuration
9.2.2.7 Resetting Following a Fault Condition

To resume normal switching operation following a fault condition (FAULT output low), the gate control signal
must be driven into a 'gate low' state before asserting RESET low. This can be accomplished with a micro-
controller, or an additional logic gate that synchronizes the RESET signal with the appropriate input signal.

ISO5500
1 ISO5500 1 ISO5500
VIN+ VIN+
2 2
VIN- VIN-
3 3
VCC1 VCC1
µC µC
4 4
GND1 GND1
5 5
RESET RESET
6 6
FAULT FAULT
7 7
NC NC
8 8
GND1 GND1
Figure 67. Auto Reset with Prior Gate-low Assertion for Non-inverting and Inverting Input Configuration
9.2.2.8 DESAT Pin Protection

Switching inductive loads causes large instantaneous forward voltage transients across the freewheeling diodes
of IGBTs. These transients result in large negative voltage spikes on the DESAT pin which draw substantial
current out of the device. To limit this current below damaging levels, a 100 Ω to 1 kΩ resistor is connected in
series with the DESAT diode. The added resistance neither alters the DESAT threshold nor the DESAT blanking
time.
Further protection is possible through an optional Schottky diode, whose low forward voltage assures clamping of
the DESAT input to VE potential at low voltage levels.
ISO5500 16
VE 100 +
15 pF DS (opt.)
VEE-L VFW
RS DDESAT
14 -
DESAT
13
VCC2 -
12
VC 15V VFW-inst
Rg
11 +
VOUT
VEE-L 10
15V
9
VEE-P
Figure 68. DESAT Pin Protection with Series Resistor and Optional Schottky Diode
9.2.2.9 DESAT Diode and DESAT Threshold

The DESAT diode’s function is to conduct forward current, allowing sensing of the IGBT’s saturated collector-to-
emitter voltage, VCESAT, (when the IGBT is "on") and to block high voltages (when the IGBT is "off"). During the
short transition time when the IGBT is switching, there is commonly a high dVCE/dt voltage ramp rate across the
IGBT. This results in a charging current ICHARGE = CD-DESAT x dVCE/dt, charging the blanking capacitor.
To minimize this current and avoid false DESAT triggering, fast switching diodes with low capacitance are
recommended. As the diode capacitance builds a voltage divider with the blanking capacitor, large collector
voltage transients appear at DESAT attenuated by the ratio of 1+ CBLANK / CD-DESAT.
Table 3 lists a number of fast-recovery diodes suitable for the use as DESAT diodes.
Because the sum of the DESAT diode forward-voltage and the IGBT collector-emitter voltage make up the
voltage at the DESAT-pin, VF + VCE = VDESAT, the VCE level, which triggers a fault condition, can be modified by
adding multiple DESAT diodes in series: VCE-FAULT(TH) = 7.2 V – n x VF (where n is the number of DESAT
diodes).

ISO5500

When using two diodes instead of one, diodes with half the required maximum reverse-voltage rating may be
chosen.
Table 3. Recommended DESAT Diodes

PART NUMBER MANUFACTURER trr (ns) VRRM-max (V) PACKAGE
STTH112 STM 75 1200 SMA, SMB, DO-41
MUR100E Motorola 75 1000 59-04 (axial leaded)
MURS160T3 Motorola 75 600 Case 403A (SMD)
UF4007 General Semi. 75 1000 DO-204AL (axial leaded)
BYM26E Philips 75 1000 SOD64 (axial leaded)
BYV26E Philips 75 1000 SOD57 (axial leaded)
BYV99 Philips 75 600 SOD87 (axial leaded)
9.2.2.10 Determining the Maximum Available, Dynamic Output Power, POD-max

The ISO5500 total power consumption of PD = 592 mW consists of the total input power, PID, the total output
power, POD, and the output power under load, POL:
PD = PID + POD + POL (2)
With:
PID = VCC1-max × ICC1-max = 5.5 V × 8.5 mA = 47 mW (3)
and:
POD = (VCC2 – VEE-P) x ICC2-q = 30 V × 14 mA = 420 mW (4)
then:
POL = PD – PID – POD = 592 mW – 47 mW – 420 mW = 125 mW (5)
In comparison to POL, the actual dynamic output power under worst case condition, POL-WC, depends on a variety
of parameters:
æ ron-max roff-max ö
POL-WC = 0.5 ´ fINP ´ QG ´ (VCC2 - VEE-P ) ´ ç + ÷
r
è on-max + R G roff-max + R G ø
where
• fINP = signal frequency at the control input VIN(±)
• QG = power device gate charge
• VCC2 = positive output supply with respect to VE
• VEE-P = negative output supply with respect to VE
• ron-max = worst case output resistance in the on-state: 4Ω
• roff-max = worst case output resistance in the off-state: 2.5Ω
• RG = gate resistor (6)
Once RG is determined, Equation 6 is to be used to verify whether POL-WC < POL. Figure 69 shows a simplified
output stage model for calculating POL-WC.

ISO5500
ISO5500
VCC2
VC
15 V
ron-max
VOUT RG
QG
roff-max
15 V
VEE-P
Figure 69. Simplified Output Model for Calculating POL-WC
9.2.2.11 Determining Gate Resistor, RG

The value of the gate resistor determines the peak charge and discharge currents, ION-PK and IOFF-PK. Due to the
transient nature of these currents, their peak values only occur during the on-to-off and off-to-on transitions of the
gate voltage. In order to calculate RG for the maximum peak current, ron and roff must be assumed zero. The
resulting charge and discharge models are shown in Figure 70.
ISO5500 ISO5500
VCC2 VCC2
VC VC
15 V 15 V
V CC2 - VEE-P V CC2 - VEE-P

VOUT Ion VOUT Ioff
RG CG RG CG
VE VE
15 V 15 V
VEE-P VEE-P
Figure 70. Simplified Gate Charge and Discharge Model
9.2.2.11.1 Off-to-On Transition

In the off-state, the upper plate of the gate capacitance, CG, assumes a steady-state potential of –VEE-P with
respect to VE. When turning on the power device, VCC2 is applied to VOUT and the voltage drop across RG results
in a peak charge current of ION-PK = (VCC2 – VEE-P)/RG. Solving for RG then provides the necessary resistor value
for a desired on-current via:
V - VEE-P
RG = CC2
ION-PK (7)
9.2.2.11.2 On-to-Off Transition

When turning the power device off, the current and voltage relations are reversed but the equation for calculating
RG remains the same.
Once RG has been calculated, it is necessary to check whether the resulting, worst-case power consumption,
POD-WC, (derived in Equation 6) is below the calculated maximum, POL = 125 mW (calculated in Equation 5).

ISO5500
9.2.2.12 Example
The example below considers an IGBT drive with the following parameters:
ION-PK = 2 A, QG = 650 nC, fINP = 20 kHz, VCC2 = 15V, VEE-P = –5 V
Applying Equation 7, the value of the gate resistor is calculated with
15V - ( - 5V)
RG = = 10 Ω
2A (8)
Then, calculating the worst-case output power consumption as a function of RG, using Equation 6 yields
æ 4Ω 2.5 Ω ö
POL-WC = 0.5 ´ 20 kHz ´ 650 nC ´ (15 V - ( - 5V))´ ç + ÷ = 63 mW
è 4 Ω + 10Ω 2.5 Ω + 10 Ω ø (9)
Because POL-WC = 63 mW is well below the calculated maximum of POL = 125 mW, the resistor value of RG =
10Ω is fully suitable for this application.
9.2.2.13 Determining Collector Resistor, RC

Despite equal charge and discharge currents, many power devices possess longer turn-off propagation and fall
times than turn-on propagation and rise times. In order to compensate for the difference in switching times, it
might be necessary to significantly reduce the charge current, ION-PK, versus the discharge current, IOFF-PK.
Reducing ION-PK is accomplished by inserting an external resistor, RC, between the VC- pin and the VCC2- pin of
the ISO5500.
ISO5500 ISO5500
VCC2 VCC2
VC RC VC VC
C2 - 15 V
VE
15 V E- P
VCC2 - VEE-P
Ion-pk Ioff-pk
VOUT VOUT
RG CG RG CG
VE VE
15 V 15 V
VEE-P VEE-P
Figure 71. Reducing ION-PK by Inserting Resistor RC
Figure 71 (right) shows that during the on-transition, the (VCC2 – VEE-P) voltage drop occurs across the series
resistance of RC + RG, thus reducing the peak charge current to: ION-PK = (VCC2 – VEE-P) /(RC + RG). Solving for RC
provides:
V - VEE-P
RC = CC2 - RG
ION-PK (10)
To stay below the maximum output power consumption, RG must be calculated first via:
VCC2 - VEE-P
RG =
IOFF-PK
(11)
and the necessary comparison of POL-WC versus POL must be completed.
Once RG is determined, calculate RC for a desired on-current using Equation 10.
Another method is to insert Equation 11 into Equation 10 and arriving at:
æI ö
RC = R G ´ ç OFF-PK - 1÷
è ION-PK ø (12)

ISO5500
9.2.2.13.1 Example
Reducing the peak charge current from the previous example to ION-PK = 1.5 A, requires a RC value of:
æ 2A ö
RC = 10 Ω ´ ç - 1÷ = 3.33 Ω
è 1.5 A ø (13)
9.2.2.14 Higher Output Current Using an External Current Buffer

To increase the IGBT gate drive current, a non-inverting current buffer (such as the npn/pnp buffer shown in
Figure 72) may be used. Inverting types are not compatible with the desaturation fault protection circuitry and
must be avoided. The MJD44H11/MJD45H11 pair is appropriate for currents up to 8 A, the D44VH10/ D45VH10
pair for up to 15 A maximum.
ISO5500 16
VE
15
VEE-L 100 pF
14
DESAT
13 MJD44H11
VCC2 or
12 D44VH10
VC 15 V
10 W 4.5 W
11
VOUT
2.5 W
10
VEE-L
MJD45H11
9 or
VEE-P D45VH10
15 V
Figure 72. Current Buffer for Increased Drive Current
9.2.3 Application Curve
VCC2 - VEE = 30 V
R G = 0 W,
CL = 10 nF
5 V / div
Time 125 ns / div
Figure 73. Output Waveform

ISO5500
10 Power Supply Recommendations

To provide the large transient currents necessary during a switching transition on the gate driver output, 0.1-μF
bypass capacitors are recommended between input supply and ground (VCC1 and GND1), and between output
supplies and ground (VCC2 and VE, VCC2 and VEE-P and VEE-P and VE). These capacitors are shown in Figure 62.
These capacitors should be placed as close to the supply and ground pins as possible.
11 Layout
11.1 Layout Guidelines

A minimum of four layers is required to accomplish a low EMI PCB design (see Figure 74). Layer stacking should
be in the following order (top-to-bottom): high-current or sensitive signal layer, ground plane, power plane and
low-frequency signal layer.
• Routing the high-current or sensitive traces on the top layer avoids the use of vias (and the introduction of
their inductances) and allows for clean interconnects between the gate driver and the microcontroller and
power transistors. Gate driver control input, Gate driver output VOUT and DESAT should be routed in the top
layer.
• Placing a solid ground plane next to the sensitive signal layer provides an excellent low-inductance path for
the return current flow. On the driver side, use VE as the ground plane.
• Placing the power plane next to the ground plane creates additional high-frequency bypass capacitance of
approximately 100 pF/in2. On the gate-driver VEE-P and VCC2 can be used as power planes. They can share
the same layer on the PCB as long as they are not connected together.
• Routing the slower speed control signals on the bottom layer allows for greater flexibility as these signal links
usually have margin to tolerate discontinuities such as vias.
For more detailed layout recommendations, including placement of capacitors, impact of vias, reference planes,
routing etc. see Application Note SLLA284, Digital Isolator Design Guide.
11.2 PCB Material

Standard FR-4 epoxy-glass is recommended as PCB material. FR-4 (Flame Retardant 4) meets the
requirements of Underwriters Laboratories UL94-V0, and is preferred over cheaper alternatives due to its lower
dielectric losses at high frequencies, less moisture absorption, greater strength and stiffness, and its self-
extinguishing flammability-characteristics.
11.3 Layout Example
High-speed traces
10 mils
Ground plane
Keep this
space free FR-4
40 mils from planes, 0r ~ 4.5
traces , pads,
and vias
Power plane
10 mils
Low-speed traces
Figure 74. Recommended Layer Stack

ISO5500
12 Device and Documentation Support
12.1 Device Support

12.1.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
12.2 Documentation Support

12.2.1 Related Documentation
For related documentation see the following:
• ISO5500 Evaluation Module (EVM) User’s Guide, SLLU136
• Digital Isolator Design Guide, SLLA284
12.2.1.1 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12.3 Trademarks
All trademarks are the property of their respective owners.
12.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
SLLA353 -- Isolation Glossary.
13 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

PACKAGE OPTION ADDENDUM
www.ti.com 14-Oct-2014
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) (6) (3) (4/5)
ISO5500DW ACTIVE SOIC DW 16 40 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 125 ISO5500DW
& no Sb/Br)
ISO5500DWR ACTIVE SOIC DW 16 2000 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 125 ISO5500DW
& no Sb/Br)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com 14-Oct-2014
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 12-Feb-2019
TAPE AND REEL INFORMATION
*All dimensions are nominal

Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1
Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
ISO5500DWR SOIC DW 16 2000 330.0 16.4 10.75 10.7 2.7 12.0 16.0 Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 12-Feb-2019
*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
ISO5500DWR SOIC DW 16 2000 350.0 350.0 43.0
Pack Materials-Page 2
GENERIC PACKAGE VIEW
DW 16 SOIC - 2.65 mm max height
7.5 x 10.3, 1.27 mm pitch SMALL OUTLINE INTEGRATED CIRCUIT
This image is a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.
4224780/A
www.ti.com
PACKAGE OUTLINE
DW0016B SCALE 1.500
SOIC - 2.65 mm max height
SOIC
10.63 SEATING PLANE

TYP
9.97
PIN 1 ID 0.1 C
A
AREA
14X 1.27
16
1
10.5 2X
10.1 8.89
NOTE 3
8
9
0.51
16X
0.31
7.6
B 0.25 C A B 2.65 MAX
7.4
NOTE 4
0.33
TYP
0.10
SEE DETAIL A
0.25
GAGE PLANE
0.3
0 -8 0.1
1.27
0.40 DETAIL A
(1.4) TYPICAL
4221009/B 07/2016
NOTES:
1. All linear dimensions are in millimeters. Dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm, per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm, per side.
5. Reference JEDEC registration MS-013.
www.ti.com
EXAMPLE BOARD LAYOUT
DW0016B SOIC - 2.65 mm max height
SOIC
SYMM SYMM
16X (2) 16X (1.65) SEE
SEE DETAILS
DETAILS
1 1
16 16
16X (0.6) 16X (0.6)
SYMM SYMM
14X (1.27) 14X (1.27)

8 9 8 9
R0.05 TYP R0.05 TYP
(9.3) (9.75)
IPC-7351 NOMINAL HV / ISOLATION OPTION

7.3 mm CLEARANCE/CREEPAGE 8.1 mm CLEARANCE/CREEPAGE
LAND PATTERN EXAMPLE

SCALE:4X
SOLDER MASK SOLDER MASK METAL

METAL OPENING OPENING
0.07 MAX 0.07 MIN

ALL AROUND ALL AROUND
NON SOLDER MASK SOLDER MASK

DEFINED DEFINED
SOLDER MASK DETAILS
4221009/B 07/2016
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.

7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
www.ti.com
EXAMPLE STENCIL DESIGN
DW0016B SOIC - 2.65 mm max height
SOIC
SYMM SYMM
16X (2) 16X (1.65)
1 1
16 16
16X (0.6) 16X (0.6)
SYMM SYMM
14X (1.27) 14X (1.27)

8 9 8 9
R0.05 TYP R0.05 TYP

(9.3) (9.75)
IPC-7351 NOMINAL HV / ISOLATION OPTION

7.3 mm CLEARANCE/CREEPAGE 8.1 mm CLEARANCE/CREEPAGE
SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL
SCALE:4X
4221009/B 07/2016
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
www.ti.com
IMPORTANT NOTICE AND DISCLAIMER
TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE
DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS”
AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY
IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD
PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate
TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable
standards, and any other safety, security, or other requirements. These resources are subject to change without notice. TI grants you
permission to use these resources only for development of an application that uses the TI products described in the resource. Other
reproduction and display of these resources is prohibited. No license is granted to any other TI intellectual property right or to any third
party intellectual property right. TI disclaims responsibility for, and you will fully indemnify TI and its representatives against, any claims,
damages, costs, losses, and liabilities arising out of your use of these resources.
TI’s products are provided subject to TI’s Terms of Sale (www.ti.com/legal/termsofsale.html) or other applicable terms available either on
ti.com or provided in conjunction with such TI products. TI’s provision of these resources does not expand or otherwise alter TI’s applicable
warranties or warranty disclaimers for TI products.
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2019, Texas Instruments Incorporated

ISO5500 2.5-A Isolated IGBT, MOSFET Gate Driver: 1 Features 3 Description

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ISO5500 2.5-A Isolated IGBT, MOSFET Gate Driver

• Isolated IGBT and MOSFET Drives in

– Industrial Inverters - VCC2

Changes from Revision B (May 2013) to Revision C Page

• Changed VCE from1200 V to 600 V ........................................................................................................................................ 1

Changes from Revision A (July 2012) to Revision B Page

• Changed the Regulatory Approvals List ................................................................................................................................. 1

Changes from Original (September 2011) to Revision A Page

• Changed the device From: Product Preview To: Production ................................................................................................. 1

2 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated

Product Folder Links: ISO5500

5 Pin Configuration and Functions

Copyright © 2011–2015, Texas Instruments Incorporated Submit Documentation Feedback 3

(1) Maximum pulse width = 10 μs, maximum duty cycle = 0.2%.

6.2 ESD Ratings

6.3 Recommended Operating Conditions

(1) If TA = 125°C, VCC1= 5.5 V, VCC2 = 30 V, RG = 10 Ω, CL = 1 nF

4 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated

Product Folder Links: ISO5500

6.4 Thermal Information

6.5 Electrical Characteristics

(1) Maximum pulse width is 50 μs, maximum duty cycle is 0.5%

Electrical Characteristics (continued)

6.6 Switching Characteristics

6 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated

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6.7 Typical Characteristics

ICC1 - Supply Current (mA)

ICC2 - Supply Current (mA)

Copyright © 2011–2015, Texas Instruments Incorporated Submit Documentation Feedback 7

Typical Characteristics (continued)

IOL - Output Sink Current (A)

VOH - VC - High Output Voltage Drop (V)

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Typical Characteristics (continued)

ICHG - Blanking Capacitor Charging

Propagation Delay (ns)

Propagation Delay (ns)

200 tPLH at VCC1 = 3.3 V

Copyright © 2011–2015, Texas Instruments Incorporated Submit Documentation Feedback 9

Typical Characteristics (continued)

Desat Sense to 90% VOUT Delay (ns)

Desat Sense to 10% VOUT Delay (ms)

Desat Sense to Fault Low Delay (ns)

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Typical Characteristics (continued)

ICH, IOUT = -500 mA

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7 Parameter Measurement Information

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Parameter Measurement Information (continued)

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Parameter Measurement Information (continued)

14 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated