SGP20N60RUF

IGBT
SGP20N60RUF
Short Circuit Rated IGBT

General Description Features

Fairchild's RUF series of Insulated Gate Bipolar Transistors • Short circuit rated 10us @ TC = 100°C, VGE = 15V
(IGBTs) provide low conduction and switching losses as • High speed switching
well as short circuit ruggedness. The RUF series is • Low saturation voltage : VCE(sat) = 2.2 V @ IC = 20A
designed for applications such as motor control, • High input impedance
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.

Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.

TO-220 E
GCE

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol Description SGP20N60RUF Units

VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C 32 A
IC
Collector Current @ TC = 100°C 20 A
ICM (1) Pulsed Collector Current 60 A
TSC Short Circuit Withstand Time @ TC = 100°C 10 us
PD Maximum Power Dissipation @ TC = 25°C 195 W
Maximum Power Dissipation @ TC = 100°C 75 W
TJ Operating Junction Temperature -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for Soldering
TL 300 °C
Purposes, 1/8” from Case for 5 Seconds

Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics
Symbol Parameter Typ. Max. Units
RθJC Thermal Resistance, Junction-to-Case -- 0.64 °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

©2002 Fairchild Semiconductor Corporation SGP20N60RUF Rev. A1

 SGP20N60RUF
Electrical Characteristics of the IGBT T C = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics
BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
∆BVCES/ Temperature Coefficient of Breakdown
VGE = 0V, IC = 1mA -- 0.6 -- V/°C
∆TJ Voltage
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA
IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 20mA, VCE = VGE 5.0 6.0 8.5 V
Collector to Emitter IC = 20A, VGE = 15V -- 2.2 2.8 V
VCE(sat)
Saturation Voltage IC = 32A, VGE = 15V -- 2.5 -- V

Dynamic Characteristics
Cies Input Capacitance -- 1323 -- pF
VCE = 30V, VGE = 0V,
Coes Output Capacitance -- 254 -- pF
f = 1MHz
Cres Reverse Transfer Capacitance -- 47 -- pF

Switching Characteristics
td(on) Turn-On Delay Time -- 30 -- ns
tr Rise Time -- 49 -- ns
td(off) Turn-Off Delay Time VCC = 300 V, IC = 20A, -- 48 70 ns
tf Fall Time RG = 10Ω, VGE = 15V, -- 152 200 ns
Eon Turn-On Switching Loss Inductive Load, TC = 25°C -- 524 -- uJ
Eoff Turn-Off Switching Loss -- 473 -- uJ
Ets Total Switching Loss -- 997 1400 uJ
td(on) Turn-On Delay Time -- 30 -- ns
tr Rise Time -- 51 -- ns
td(off) Turn-Off Delay Time VCC = 300 V, IC = 20A, -- 52 75 ns
tf Fall Time RG = 10Ω, VGE = 15V, -- 311 400 ns
Eon Turn-On Switching Loss Inductive Load, TC = 125°C -- 568 -- uJ
Eoff Turn-Off Switching Loss -- 1031 -- uJ
Ets Total Switching Loss -- 1599 2240 uJ
Tsc Short Circuit Withstand Time VCC = 300 V, VGE = 15V 10 -- -- us
@ TC = 100°C
Qg Total Gate Charge -- 55 80 nC
VCE = 300 V, IC = 20A,
Qge Gate-Emitter Charge -- 10 15 nC
VGE = 15V
Qgc Gate-Collector Charge -- 25 40 nC
Le Internal Emitter Inductance Measured 5mm from PKG -- 7.5 -- nH

©2002 Fairchild Semiconductor Corporation SGP20N60RUF Rev. A1

 SGP20N60RUF
60 60
Common Emitter 20V 15V
Common Emitter
TC = 25℃
VGE = 15V
50 50
T C = 25℃ ━━

Collector Current, IC [A]

12V
T C = 125℃ ------
Collector Current, IC [A]

40 40

30 30
VGE = 10V

20 20

10 10

0 0
0 2 4 6 8 1 10

Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, V CE [V]

Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics

5 28
Common Emitter VCC = 300V
V GE = 15V Load Current : peak of square wave
Collector - Emitter Voltage, VCE [V]

24
4
40A
20
Load Current [A]

3 30A
16
20A
2 12
IC = 10A

8
1
4 Duty cycle : 50%
TC = 100℃
0 Power Dissipation = 32W
0
-50 0 50 100 150 0.1 1 10 100 1000
Case Temperature, T C [℃] Frequency [KHz]

Fig 3. Saturation Voltage vs. Case Fig 4. Load Current vs. Frequency
Temperature at Variant Current Level

20 20
Common Emitter Common Emitter
T C = 25℃ TC = 125℃
Collector - Emitter Voltage, VCE [V]

Collector - Emitter Voltage, VCE [V]

16 16

12 12

8 8

40A
40A
4 4 20A
20A

IC = 10A IC = 10A

0 0
0 4 8 12 16 20 0 4 8 12 16 20

Gate - Emitter Voltage, V GE [V] Gate - Emitter Voltage, V GE [V]

Fig 5. Saturation Voltage vs. VGE Fig 6. Saturation Voltage vs. VGE

©2002 Fairchild Semiconductor Corporation SGP20N60RUF Rev. A1

 SGP20N60RUF
2400
Common Emitter Common Emitter
VGE = 0V, f = 1MHz V CC = 300V, V GE = ± 15V
2000 TC = 25℃ IC = 20A
T C = 25℃ ━━ Ton
Cies T C = 125℃ ------
Capacitance [pF]

Switching Time [ns]

1600
100 Tr
Coes
1200

800

Cres
400

0 10
1 10 1 10 100

Collector - Emitter Voltage, VCE [V] Gate Resistance, R G [Ω ]

Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs.

Gate Resistance

Common Emitter
V CC = 300V, V GE = ± 15V
IC = 20A
1000 T C = 25℃ ━━
T C = 125℃ ------ Eoff
Switching Time [ns]

1000
Switching Loss [uJ]

Eon
Toff

Tf Eoff
Toff

Common Emitter
Tf V CC = 300V, V GE = ± 15V
IC = 20A
T C = 25℃ ━━
100
T C = 125℃ ------
100
1 10 100 1 10 100

Gate Resistance, R G [Ω ] Gate Resistance, R G [ Ω ]

Fig 9. Turn-Off Characteristics vs. Fig 10. Switching Loss vs. Gate Resistance
Gate Resistance

1000
Common Emitter
V GE = ± 15V, RG = 10Ω
TC = 25℃ ━━ Ton
TC = 125℃ ------
Switching Time [ns]

Switching Time [ns]

100
Toff
Tr
Tf

Toff

Tf

100 Common Emitter

VGE = ± 15V, RG = 10Ω
TC = 25℃ ━━
TC = 125℃ ------
10
10 15 20 25 30 35 40 10 15 20 25 30 35 40

Collector Current, IC [A] Collector Current, IC [A]

Fig 11. Turn-On Characteristics vs. Fig 12. Turn-Off Characteristics vs.
Collector Current Collector Current
©2002 Fairchild Semiconductor Corporation SGP20N60RUF Rev. A1
 SGP20N60RUF
15
Common Emitter Common Emitter
VGE = ± 15V, RG = 10Ω RL = 15 Ω
T C = 25℃ ━━ TC = 25℃
12

Gate - Emitter Voltage, VGE [ V ]

T C = 125℃ ------ Eoff
VCC = 100 V 300 V
Switching Loss [uJ]

200 V
1000 9
Eoff
Eon

100 0
10 15 20 25 30 35 40 0 10 20 30 40 50 60

Collector Current, IC [A] Gate Charge, Qg [ nC ]

Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics

100 100
IC MAX. (Pulsed)
50㎲

IC MAX. (Continuous) 100㎲

1㎳
Collector Current, I C [A]

Collector Current, IC [A]

10
DC Operation

10

1
Single Nonrepetitive
Pulse T C = 25℃
Curves must be derated
linearly with increase
Safe Operating Area
in temperature
V GE = 20V, TC = 100℃
0.1 1
0.3 1 10 100 1000 1 10 100 1000

Collector-Emitter Voltage, V CE [V] Collector-Emitter Voltage, V CE [V]

Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics

1
Thermal Response, Zthjc [℃/W]

0.5

0.2
0.1 0.1
0.05

0.02
Pdm
0.01 0.01
t1

t2
single pulse
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
1E-3
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
Rectangular Pulse Duration [sec]

Fig 17. Transient Thermal Impedance of IGBT

©2002 Fairchild Semiconductor Corporation SGP20N60RUF Rev. A1

 SGP20N60RUF
Package Dimension

TO-220
9.90 ±0.20 4.50 ±0.20
1.30 ±0.10

(8.70)

2.80 ±0.10
(1.70)

+0.10
ø3.60 ±0.10 1.30 –0.05

18.95MAX.
(3.70)

15.90 ±0.20
9.20 ±0.20

(1.46)

(3.00)
(45°
)
(1.00)
13.08 ±0.20

10.08 ±0.30

1.27 ±0.10 1.52 ±0.10

0.80 ±0.10 +0.10

0.50 –0.05 2.40 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]

10.00 ±0.20

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation SGP20N60RUF Rev. A1

 TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™ FAST® MICROWIRE™ SLIENT SWITCHER® UHC™
Bottomless™ FASTr™ OPTOLOGIC™ SMART START™ UltraFET®
CoolFET™ FRFET™ OPTOPLANAR™ SPM™ VCX™
CROSSVOLT™ GlobalOptoisolator™ PACMAN™ STAR*POWER™
DenseTrench™ GTO™ POP™ Stealth™
DOME™ HiSeC™ Power247™ SuperSOT™-3
EcoSPARK™ I2C™ PowerTrench® SuperSOT™-6
E2CMOS™ ISOPLANAR™ QFET™ SuperSOT™-8
EnSigna™ LittleFET™ QS™ SyncFET™
FACT™ MicroFET™ QT Optoelectronics™ TinyLogic™
FACT Quiet Series™ MicroPak™ Quiet Series™ TruTranslation™
STAR*POWER is used under license

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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
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or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2002 Fairchild Semiconductor Corporation Rev. H5

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