Electrical and optical properties of materials JJL Morton

Electrical and optical properties of materials

John JL Morton

Part 2: Dielectric properties of materials

In this, the second part of the course, we will examine the properties of
dielectric materials, how they may be characterised, and how these charac-
teristics depend on parameters such as temperature, and frequency of applied
field. Finally, we shall review the ways in which dielectric materials fail under
very high electric fields.

2.1 Ways to characterise dielectric materials

a. Relative permittivity, r

b. Loss tangent, tan δ

c. Breakdown field

2.1.1 Relative permittivity, r

Let’s begin by reminding ourselves about relative permittivity, which was
introduced in earlier courses. Michael Faraday discovered that upon placing
a slab of insulator between two parallel plates the charge on the plates in-
creased, for a given voltage. This additional charge arises from an induced
polarisation in the dielectric material.
dQ
Recap Q=CV I= dt
= C dV
dt

The capacitance increased with this insulator in place, such that we can
define the new capacitance C = r C0 , where C0 is the capacitance of the par-
allel plates when filled with a vacuum. The factor by which the capacitance
increases is thus the relative permittivity, r .
The electric displacement field D arises from the combination of the ap-
plied electric field E and the polarisation of the material P , in the relation:

D = 0 E + P (2.1)

Assuming the polarisation is proportional to the applied field E in the relation

P = χe 0 E, we can rewrite this as:

D = 0 E + χe 0 E = 0 (1 + χe )E = 0 r E (2.2)

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2. Dielectric properties of materials

Thus, the induced polarisation serves to increase the apparent electric field
by a factor r , which we can now express as:
P
r = +1 (2.3)
0 E

2.1.2 Loss tangent, tan δ

If we apply an AC voltage V = V0 sin ωt to a capacitor C, the current
IC = V0 ωC cos ωt follows π/2 out of phase. The same will hold for a circuit
containing purely capacitive components, as these can simply be expressed
with an effective capacitance. The power lost in the circuit is the product of
the current and voltage W = IV , which is zero because I and V are precisely
out of phase. Conversely, the current through a resistor R will follow the AC
voltage in phase (IR = V0 sin ωt/R) and it dissipates power.
If the capacitor is ‘leaky’ in some way, such that there is a residual resis-
tance, or the polarisation of the dielectric lags behind the AC voltage such
that I and V are no longer perfectly out of phase, power will be lost across
the capacitance. We define this characteristic in terms of the loss tangent.
We model the leaky dielectric as a perfect capacitor with a resistor in parallel,

Figure 2.1: A leaky capacitor

as shown in Figure 2.1, and apply an AC voltage V = V0 sin ωt.

V0 sin ωt
I = IR + IC = + CV0 ω cos ωt (2.4)
R
We define the loss tangent tan δ as the ratio of the amplitude of these
components, such that a perfect capacitor has a loss tangent of zero.

IR V0 /R 1
tan δ = = = (2.5)
IC CV0 ω ωCR
The power lost W = V I is:
1 T
Z Z 2π/ω  
ω V0 sin ωt
W = VI = V0 sin ωt + CV0 ω cos ωt dt (2.6)
T 0 2π 0 R

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Electrical and optical properties of materials JJL Morton

2π/ω
ωV02
 
1 − cos 2ωt
Z
W = + Cω sin ωt cos ωt dt (2.7)
2π 0 2R
V02 1 1
W = = ωV02 C tan δ = ωV02 C0 r tan δ (2.8)
2R 2 2
So there is power dissipation proportional to the loss tangent (tan δ) as
well as relative permittivity r . We sometimes use the loss factor (r tan δ)
to compare dielectric materials by their power dissipation.
Another way of thinking about this is allowing a complex relative permit-
tivity which incorporates this loss tangent. The imaginary part of r is then
directly responsible for the effective resistance. The impedance of a capacitor
C is (C0 is the capacitance of the device were it filled with vacuum):
1 1
Z= = (2.9)
iωC iωr C0
For a complex r = Re(r ) + iIm(r ):

1 Re(r ) Im(r )
Z= = 2
− (2.10)
iωC0 [Re(r ) + iIm(r )] iωC0 |r | ωC0 |r |2

The first of these terms is imaginary and so still looks like an ideal capacitor,
with actual capacitance C 0 , while the second is real and so looks like a resistor
(Z = R), as defined below:

C0 |r |2 Im(r ) 1 Im(r )

C0 = , R= 2
, and hence tan δ = = (2.11)
Re(r ) ωC0 |r | ωCR Re(r )

The loss tangent is then nothing more than the ratio of the imaginary and
real parts of the relative permittivity. Looking back at Eq. 2.3 we see the
relationship between the relative permittivity and the polarisation induced in
the dielectric. If the polarisation change is in phase with the applied electric
field, the material appears purely capacitive. If there is a lag (for reasons
we shall discuss in the coming section), the relative permittivity acquires
some imaginary component, the material acquires ‘resistive’ character and a
non-zero loss tangent.

2.2 Origins of polarisation

2.2.1 Electronic polarisation

Following the simple Bohr model of the atom, the applied electric field dis-
places the electron orbit slightly (see Figure 2.2). This produces a dipole,

3
2. Dielectric properties of materials

equivalent to a polarisation. There are quantum mechanical treatments of

this effect (using perturbation or variational theory) which all give the result
that the effect is both small, and occurs very rapidly (on a timescale equiva-
lent to the reciprocal of the frequency of the X-ray or optical emission from
excited electrons in those orbits). Therefore we expect no lag, and thus no
loss, except at frequencies which are resonant with the electron transition
energies. We will discuss the resonant case later.

e e
- -
+ +

E=0 E

Figure 2.2: Electronic (atomic) polarisation

2.2.2 Ionic polarisation

The ions of a solid may be modelled as charged masses connected (to a first
approximation) to their nearest neighbours by springs of various strengths,
as illustrated in Figure 2.3. The electric field displaces the ions, polarising
the solid. In this case we expect a profound frequency dependence on the lag,
according to the charges, masses and ‘spring constants’ (interatomic forces).

+ ! + ! + + ! + ! +
! + ! + ! ! + ! + !
+ ! + ! + + ! + ! +
! + ! + ! ! + ! + !
E=0 E

Figure 2.3: Ionic polarisation

2.2.3 Orientation polarisation

i. Fluids containing permanent electric dipoles: polar dielectrics
If the molecules of the fluid have permanent electrostatic dipoles, they will
align with the applied electric field, as illustrated in Figure 2.4. Their be-

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Electrical and optical properties of materials JJL Morton

haviour is analogous to the classical theory of paramagnetism, which is ex-

amined in more detail in the following lecture course on Magnetic Properties
of Materials. We shall simply note now that this leads to a 1/T tempera-
ture dependence. We may use intuition to observe that at low frequencies
the molecules have time to respond to the applied electric field and so the
polarisation can be large. On the other hand, if we apply a high frequency
electric field, the molecules may not have time to respond by virtue of their
inertia, collisions with other molecules etc., and so the polarisation can be
less.

E=0 E

Figure 2.4: Polarisation due to electric dipoles in a fluid

ii. Ion jump polarisation

Dipoles across several ions in an ionic solid may reorient under an applied
electric field to yield a net polarisation. For example, consider A+ B − ionic
solids containing a small amount of C 2+ (B − )2 impurity. The A+ vacancies
which are present may associate with the C 2+ (for net charge neutrality),
and this pair will possess an electric dipole. This pair may reorientate under
the applied field, through site-to-site changes of state, in order to minimise
its energy, as illustrated in Figure 2.5. Both temperature and frequency
dependencies are expected. The contribution will be small for frequencies
much greater than the ion hopping frequency (as described in Part 1 of
this course). This mechanism also applies in several of the models for ionic
conductivity we examined earlier in which electric dipoles are present in the
ionic solid.

2.2.4 Space charge polarisation

In a multiphase solid where one phase has a much larger electrical resistivity
than the other, charges can accumulate at the phase interfaces. The mate-
rial behaves like an assembly of resistors and capacitors on a fine scale, the
overall effect being that the solid is polarised (a schematic drawing is shown

5
2. Dielectric properties of materials

+ ! + ! + + ! + ! +

! 2+ ! + ! ! 2+ ! + !

+ ! ! ! + ! ! + ! +

! + ! + ! ! + ! + !

E=0 E

Figure 2.5: ‘Ion-jump’ polarisation

in Figure 2.6). A complicated frequency dependence is expected according

to the range of effective capacitances and resistances involved, determined
by grain sizes and the resistivity of the different phases (which are in turn
temperature dependent). This type of polarisation can be observed in certain
ferrites and semiconductors.
R
+ –
+ –
+ –
+ –
model R
+ – as
+ – C
+ – + – R
+ –– + –
+ + –
+ – R
+ –
+ –
+ –

Figure 2.6: Space charge polarisation

In the following sections we will examine the frequency dependences of

these different mechanisms. Figure 2.12 (towards the end of these notes)
shows a basic summary, which should be consistent with our intuition on the
energy/time scales of these processes.

2.3 Local electric field and polarisation

In order to understand the frequency response of these polarisation mecha-

nisms, we must first develop a microscopic theory of polarisation and under-
stand how the polarisability of particles in a certain effective field relates to
measurable parameters such as r . The polarisation induced at some point
in our dielectric material is proportional to the local electric field:
P = nαEloc , (2.12)
where n is the density of particles of polarisability α. But how can we
calculate the local electric field at some point, when this will itself include

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Electrical and optical properties of materials JJL Morton

contributions from the polarisation of the surrounding material? Let’s take

some point in the middle of the material. In the case of cubic symmetry,
we can cut a spherical hole around that point and represent the effect of the
polarisation of the material we’ve cut out by the surface charge resulting on
the surface of the hole (see Figure 2.7). An electric field in the direction r

Ez Pz z
– – ––
– – rδθ
δA – r
δθ
θ θ
r y
φ
+
+ δφ
+ + r sinθ δφ
+ + + x

Figure 2.7: Calculation of the local electric field, by removing a sphere of

material around the point of interest and finding the surface charge around
the hole

is produced at the centre of the sphere by a small surface area of sphere δA

with polarisation P (along z):
P cos θ
δEr = δA (2.13)
4π0 r2
By symmetry, when we sum all the contributions of this radial electric field
at the centre, only the component parallel to the polarisation (along z) will
remain. Thus ZZ
Es = δEr cos θ (2.14)
surface

Using the standard approach to surface integrals in spherical polar coordi-

nates, where δA = r2 sin θ δθ δφ, we have:
Z π Z 2π
P cos2 θ 2
Es = 2
r sin θ δθ δφ (2.15)
θ=0 φ=0 4π0 r
Z π
P cos2 θ
Es = 2
2πr2 sin θ δθ (2.16)
θ=0 4π 0 r
Z π
P cos2 θ
Es = sin θ δθ (2.17)
θ=0 20
π
P cos3 θ

Es = (2.18)
20 3 0

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2. Dielectric properties of materials

P
Es = (2.19)
30
The total electric field at some point within the material is the sum of this
contribution from the surrounding polarisation, and the applied electric field
E:
P
Eloc = E + (2.20)
30
(Note: this derivation assumed cubic symmetry, and the constant prefactors
in the above change when moving to other symmetries.) By combining this
result with Eqs 2.3 and 2.12 we obtain1 the Clausius-Mossotti relation:
r − 1 nα
= (2.21)
r + 2 30
This relation reveals how a microscopic property of a material, the polaris-
ability α, may be obtained from a measurable quantity r .

2.3.1 Polarisability versus temperature

The term α in the Clausius Mossotti relation derived above represents how
the overall polarisation of a material goes with the effective local (or internal)
field. There must, however, be some temperature dependence — we can
imagine that at high temperatures kinetic energies are such that the particles
pay little attention to the electric field and the resulting polarisation is weak
(and vice versa at low temperatures). We can use the Langevin derivation
(developed originally for paramagnetism) to describe this effect.

p
θ
Eloc

Figure 2.8: A permanent dipole in an electric field

Consider a particle with a permanent dipole p inclined at some angle θ

to the local electric field Eloc (as illustrated in Figure 2.8. It has an electric
potential energy U = −pEloc cos θ. From classical statistical mechanics, the
number of particles δn with energy in the range U to U + δU is:
 
−U
δn = C exp δU (2.22)
kB T
1
Tip: Start from nα = P/Eloc and evaluate right hand side

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Electrical and optical properties of materials JJL Morton

R
C is a normalising constant which ensures that dn = n. Our particle
at angle θ to Eloc contributes p cos θ to the overall polarisation (random
components perpendicular to Eloc will cancel out on average). Hence, the
volume polarisation is: R
p cos θ dn
P =n R (2.23)
dn
Rπ  
pEloc cos θ
0
p cos θ C exp kB T
dU
P =n Rπ   (2.24)
pEloc cos θ
0
C exp kB T
dU

Differentiating U with respect to θ tells us: dU = pEloc sin θ dθ, and so:
Rπ  
pEloc cos θ
0
p cos θ C exp kB T
pEloc sin θ dθ
P =n Rπ   (2.25)
0
C exp pEloc cos θ
kB T
pEloc sin θ dθ

This can be tackled by first cancelling the factor pEloc C from top and bottom
and then making some handy substitutions pEloc /kB T = y and cos θ = x
(which means dx = − sin θ dθ):
R −1
x exp(xy) dx
P = n R1 −1 (2.26)
1
exp(xy) dx

This integral has a known solution:

 
1
P = np coth y − = npL(y) (2.27)
y

L(y) is known as the Langevin function and is plotted in Figure 2.9. In the
limit of small y (small fields and/or high temperatures), L(y) → y/3, i.e.

np2
P = Eloc (2.28)
3kB T

Looking back at Eq. 2.12, we now see that in this limit, the polarisability α
has a 1/T dependence with temperature, and goes with the dipole squared.
At the other limit (very high fields and/or low temperatures), all the dipoles
add up and the polarisation becomes bounded to P = np. (Note that in
this limit there is no further electric field dependence and Eq. 2.12 no longer
holds).

9
2. Dielectric properties of materials

1 L(y)

0.75

0.5

y = pEloc/kBT
-10 -7.5 -5 -2.5 2.5 5 7.5 10

L(y) ~ y/3

-0.5

-0.75

-1

Figure 2.9: The Langevin function

2.4 Resonant frequency dependence r

Many of the polarisation mechanisms described above can be thought of as

some displacement of a charged particle from some equilibrium position. We
can model this as a particle of charge q, mass m, held in the equilibrium by a
force which is linear in displacement (i.e. a spring) with spring constant mω02 .
Let’s say the medium in which the particle sits provides a drag of constant
mγ, and the particle experiences a force from an oscillating electric field
Eloc = E0 exp iωt. The resulting equation of motion is:
 2 
dx dx 2
m +γ + ω0 x = qE0 exp(iωt) (2.29)
dt2 dt
We can guess that the steady state solution will be of the form x0 exp(iωt),
substitute such a solution into the differential equation above to check it
works and find the constant x0 .
q 1
x = x0 exp(iωt) = 2
E0 exp(iωt) (2.30)
m (ω0 − ω 2 ) + iωγ
The dipole moment of this particle is the product of its charge and its dis-
placement: qx, so the total polarisation is:
nq 2 1
P = np = nqx = 2
E0 exp(iωt) (2.31)
m (ω0 − ω 2 ) + iωγ
Using Eq. 2.12 we can extract the polarisability:
q2 1
α= 2
(2.32)
m (ω0 − ω 2 ) + iωγ

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Electrical and optical properties of materials JJL Morton

and then use the Clausius-Mossotti relation (Eq. 2.21) to obtain the relative
permittivity:
r − 1 nq 2 1
= (2.33)
r + 2 3m0 (ω02 − ω 2 ) + iωγ
We notice that r is therefore complex. The imaginary part is directly due
to the ‘drag’ factor γ and leads to absorption of energy by the system, as we
might expect.

2.4.1 Case for weak absorption

In the limit of weak resonance (r close to 1), the Clausius-Mossotti relation
simplifies to:
nα r − 1 r − 1
= ≈ (2.34)
30 r + 2 3
Thus we can write the frequency dependent r derived in Eq. 2.33 as:
nq 2 1
r − 1 = 2
(2.35)
m0 (ω0 − ω 2 ) + iωγ
and separate out the real and imaginary parts:
nq 2 (ω02 − ω 2 )
Re(r ) = 1 + (2.36)
m0 (ω02 − ω 2 )2 + ω 2 γ 2

nq 2 ωγ
Im(r ) = − (2.37)
m0 (ω0 − ω 2 )2 + ω 2 γ 2
2

These expressions can be simplified for the case where the ω is close to the
resonance frequency ω0 with the substitution2 : (ω02 − ω 2 ) = 2ω(ω0 − ω).

nq 2 (ω0 − ω)
Re(r ) = 1 + (2.38)
2mω0 (ω0 − ω)2 + γ 2 /4

nq 2 γ/2
Im(r ) = − (2.39)
2m0 (ω0 − ω)2 + γ 2 /4
These terms are plotted in Figure 2.10 and show the maximum absorption
(imaginary part of r ) right on resonance at ω0 , as expected. For the limits
where ω is small (ω → 0) or large (ω → ∞) we can go back to Eq. 2.35:

nq 2
If ω → 0, then r − 1 → (2.40)
m0 ω02
2


Let ω = ω0 + δ, and write down ω02 − ω 2 neglecting powers of δ 2

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2. Dielectric properties of materials

If ω → ∞, then r − 1 → 0 (2.41)
In both cases the relative permittivity is purely real. We can think of the
low frequency limit as that in which the polarisation can easily keep up with
the oscillating electric field, and so there is no loss. At the other extreme, i.e.
very high frequencies, the polarisation simply has no chance of following the
oscillating electric field and ignores it. There is therefore a drift in the ‘back-
ground’ (non-resonant) part of r to lower values as frequency is increased,
in addition to the resonance peak. We can also see from the figure that the
linewidth of the resonance feature is equal to γ.

0.5 1
Re[ε]-1
0.25 0.75
Re[ε]-1

Im[ε]
0 0.5
Im[ε]

-0.25 0.25

-0.5 0
-2 -1 0 +1 +2
(ω-ω0)/γ

Figure 2.10: The real and imaginary parts of the relative permittivity close
to resonance

We can naturally have multiple polarisation mechanisms/centres at play

in a material, and might expect to see multiple resonances. This can be
treated in the same way as above. Note that in the case of many reso-
nances close together in frequency, discrete resonance lines may not be easily
observed and care must be taken to correctly interpret the absorption spec-
trum.
The model we have used applies quite well to ionic solids, less well to
molecular rotation bands, and surprisingly well to the optical/X-ray transi-
tions in the electron polarisation model at very high frequencies.

2.5 Non-resonant frequency dependence of r

In some mechanisms there will not be some particular resonance we are

exciting, but rather there is a certain time response of the system to change
(e.g. based on collisions in a fluid). This time response then determines the
frequency behaviour of r .

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Electrical and optical properties of materials JJL Morton

Let’s consider the behaviour of a system with polarisation P under the

influence of a field E, when the field suddenly changes to E0 where the
equilibrium polarisation would be P0 . The change in polarisation won’t be
instantaneous, but will depend on the time response of the dominant polar-
isation mechanism. It is reasonable that the polarisation will exponentially
tend to the equilibrium value with some rate constant τ .

P (t) = P0 exp(−t/τ ) (2.42)

We know that the frequency spectrum of something with a time dependence

is given by the Fourier Transform (where constant A ensures f (ω) has the
right dimension): Z ∞
f (ω) = A P (t) exp(−iωt)dt (2.43)
0

P (t) = P0 exp(−t/τ ) (2.44)

Z ∞
r (ω) = A P0 exp (−t (iω + 1/τ )) dt (2.45)
0
AP0
r (ω) = +B (2.46)
1/τ + iω
(For complete generality we have added a constant offset B to this frequency
dependence). Although this expression fully describes the frequency depen-
dence of r as it is, we commonly cancel the constants A and B by expressing
r (ω) in terms of the static (ω = 0) and high-frequency (ω = ∞) limits. Eval-
uating Eq. 2.46 we see:

r (0) = AP0 τ + B and r (∞) = B (2.47)

Thus we can write down the typical form of the Debye Equation

r (ω) − r (∞) 1
= (2.48)
r (0) − r (∞) 1 + iωτ

where, separating real and imaginary parts:

r (0) − r (∞)
Re(r (ω)) = r (∞) + (2.49)
1 + ω2τ 2
r (0) − r (∞)
Im(r (ω)) = ωτ (2.50)
1 + ω2τ 2
These real and imaginary parts are sketched in Figure 2.11. We can see
similarities with the resonant case described above. For example, we see a

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2. Dielectric properties of materials

peak in the absorption (imaginary part) at some frequency ω = 1/τ . On the

other hand, there is no resonant feature in the real part of r as we saw in
Figure 2.10, but rather a smooth change from r (0) to r (∞). The model
we’ve used describes well the behaviour of gases, and is thought to explain
polar liquids and possibly ion-jump polarisation in solids.

Re[ε]
ε'

Im[ε]
ε''
ωτ
0.1 1 10 100

Figure 2.11: The real and imaginary parts of the relative permittivity close
according to Debye relaxation

The different mechanisms and types of frequency dependence are sum-

marised in Figure 2.12 and the table below. Finally, note that it is common
to denote the real part of dielectric permittivity Re(r ) = 0r , and the imagi-
nary part Im(r ) = 00r

2.6 Temperature and frequency dependence in the loss factor

In general, there are two contributions to the loss factor:

a. DC leakage which appears as a resistance R. Polar organic molecules

are very low loss, while ionic solids (as we’ve discovered) have a strongly
temperature dependent conductivity.

b. AC loss arising from the imaginary part of the dielectric permittivity r ,

which has the frequency dependences described above. For example,
oils used in transformers to prevent breakdown are OK at very low
frequencies, but at medium-to-high frequencies ionic solids must be
used. Oils may have Debye-type losses in the medium frequency range,
leading to a drop in r which persists to infinite frequency.

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Electrical and optical properties of materials JJL Morton

log10(Frequency (Hz))
0 2 4 6 8 10 12 14 16 18
Re[ε]
ε'

0 e
-
+ +
+
+ +
Ionic Electronic
Dipolar
Im[ε] molecular spectra atomic
ε'' spectra

rotation vibration
bands bands

permanent dipoles

00 2 4 6 8 10 12 14 16 18
radio MW IR UV X-ray
log10(Frequency (Hz))

Figure 2.12: Summary of various polarisation mechanisms and how they

contribute to the frequency dependence of r (not all present in one material).

Polarisation Temperature dep. Frequency dep.

Electronic none very little, except at very
high frequencies
Ionic some, as spring constants vary resonances in IR
with T
Fluid orientation ∝ 1/T Large - Debye
Ion jump some: tends to 0 as T → 0 (no Debye
jumps) and as T → ∞ (K.E. >>
orientation energy)
Space charge Resistivities of different phases yes (‘RC network’)
strongly T dependent

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2. Dielectric properties of materials

2.7 Dielectric breakdown in semiconductors

This third property of dielectric materials may be treated somewhat indepen-

dently from the other two. Breakdown describes the situation where, under
very high electric fields, the material becomes conducting (lightning being a
classic example). The electric field at which the dielectric eventually breaks
down is known as the dielectric strength or breakdown strength.
As we learnt in Part 1, insulators such as ionic solids behave like semi-
conductors of large energy gap. There are two non-catastrophic breakdown
mechanisms associated with semiconductors which might therefore be appli-
cable: Zener breakdown and avalanche breakdown.

2.7.1 Zener breakdown

Take a look at Figure 2.13, where a large electric field is applied to a semicon-
ductor. Typically, an electron in the valence band lacks the energy to enter
the conduction band. However, in a strong electric field the energy bands
bend with distance and an electron can hop from the valence to conduction
band by changing its position. There is clearly an energy barrier to such
a jump, but as the field increases, the necessary distance ∆x decreases and
there is increasing likelihood that the electron tunnels successfully. Note that
it also leaves a hole behind, which will also conduct.

2.7.2 Avalanche breakdown

In even larger electric fields (a larger bandgap will require larger fields for
Zener breakdown) an electron, once in the conduction band, may acquire very
large amounts of kinetic energy in between collisions. It may be that when
it does experience a collision, sufficient energy can be given to a valence-
band electron to promote it into the conduction band. The original electron
loses some kinetic energy but stays in the conduction band. There are now
two electrons (and two holes) which can then generate more, producing an
‘avalanche’ effect.

2.8 Dielectric breakdown in insulators

Breakdown in insulators (where it is understood at all) is usually classified

under the following five headings:

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Electrical and optical properties of materials JJL Morton

Ec Ec
ba
nd
e-
ion
duct Ev Ev
con
Energy, E

Energy, E
d
e-
b an
nce h+
e
val
∆x

Position, x Position, x

Figure 2.13: Zener breakdown (left) and collision, or avalanche, breakdown

(right)

2.8.1 Collision breakdown

This is the same mechanism as avalanche breakdown: although in insula-
tors the concentration of electrons in the conduction band is extremely weak
(∼ 106 m−3 ). At high fields these few electrons acquire large amounts of
kinetic energy and thus through collisions multiply the number of free elec-
trons. [Note: Zener breakdown is much less likely in insulators because the
tunnelling length becomes too large — a consequence of the large band gap]

2.8.2 Thermal breakdown

Under DC conditions, once any conduction starts to take place, ohmic heat-
ing will result. Because thermal conductivities of insulators are often very
low, a large degree of local heating is possible. In insulators, as in semi-
conductors, higher temperature results in more free carriers and a higher
conductivity. This can cause more conduction, more heating (even melting)
as breakdown ensues.
Under AC conditions, any loss (lag) mechanism dissipates energy and
hence heats the material, leading to breakdown as above. As an example,
the Debye relaxation term for polythene has a maximum at 1 MHz. The
molecule will absorb more strongly at this frequency, causing heating and a
dramatically lower breakdown strength than at DC:

Breakdown strength@ DC 3 − 5 × 108 Vm−1

Breakdown strenth @ 1 MHz 5 × 106 Vm−1

2.8.3 Gas-discharge breakdown

Common lightning is an obvious example of this effect, though it may also be
the dominant mechanism in a solid if the insulator is porous, containing oc-

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2. Dielectric properties of materials

cluded gas bubbles (e.g. interlayer air in some micas). The field experienced
by the gas is higher than that in the solid because of the continuity condi-
tion on the electric displacement field D = r 0 E (see Figure 2.14). Because
r (solid) is likely to be significantly greater than r (gas), a larger electric
field E will be present within the gas region. Thus, even if the breakdown
strength of the gas were to be greater than that of the solid, it is likely to
fail at a lower applied field because of the amplifying effect of the relative
permittivity of the solid.

D
solid
gas
ε0εr,s Es ε0εr,s Es
ε0εr,g Eg
Eg = Es (εr,s/εr,g)

Figure 2.14: Gas discharge breakdown: the field-amplifying effect of the

relative permittivity of the solid

2.8.4 Electrolytic breakdown

This term is used for breakdown caused by the presence of structural im-
perfections such as dislocation arrays, grain boundaries etc. which produce
electrically weaker or conducting paths in the material through which current
may pass.

2.8.5 Dipole breakdown

Related but distinct from the above mechanism is dipole breakdown, where
structural imperfections stress the dipoles produced when the material be-
comes highly polarised in such a way as to make them more easily ionised.
This increases the concentration of free carriers providing semiconducting
paths with significantly lower electrical resistivity.

In an actual material, all of these mechanisms may be active to some ex-

tent. Thermal and collision breakdown are certainly ‘the last straw’, giving
catastrophic breakdown in many cases.

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