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Mechanical Data: Applications

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Prelim. 11/98 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.

uk
Website http://www.semelab.co.uk
2N4391
JFET SWITCHING
N CHANNEL- DEPLETION
FEATURES
LOW ON RESISTANCE
FAST SWITCHING
MILITARY OPTIONS AVAILABLE
APPLICATIONS:
SWITCHING APPLICATIONS
V
DS
DrainSource Voltage
V
DG
DrainGate Voltage
V
GS
GateSource Voltage
I
GF
Forward Gate Current
P
D
Total Device Dissipation @ T
C
= 25C
Derate above 25C
T
J
Operating Junction Temperature Range
T
STG
Storage Temperature Range
40V
40V
40V
50mA
1.8W
10mW/ C
65 to +175C
65 to +175C
MECHANICAL DATA
Dimensions in mm (inches)
TO18 METAL PACKAGE
ABSOLUTE MAXIMUM RATINGS (T
case
= 25C unless otherwise stated)
PIN 1 Source
Underside View
PIN 2 Drain PIN 3 Gate
1 3
2
2.54 (0.100)
Nom.
0.48 (0.019)
0.41 (0.016)
dia.
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
5
.
3
3

(
0
.
2
1
0
)
4
.
3
2

(
0
.
1
7
0
)
1
2
.
7

(
0
.
5
0
0
)
m
i
n
.
(Gate is connected to case)
Parameter Test Conditions Min. Typ. Max. Unit
I
G
= 1.0A V
DS
= 0
V
GS
= 20V V
DS
= 0
V
GS
= 20V V
DS
= 0
T
A
= 150C
V
DS
= 20V I
D
= 1.0nA
I
G
= 1.0mA V
DS
= 0
V
GS
= 12V V
DS
= 20V
V
GS
= 12V V
DS
= 20V
T
A
= 150C
V
GS
= 0V V
DS
= 20V
I
D
= 12mA V
GS
= 0
I
D
= 1.0mA V
GS
= 0
V
GS
= 0V V
DS
= 20V
f = 1.0MHz
V
GS
= 12V V
DS
= 0V
f = 1.0MHz
V
GS
= 0V I
D
= 0
f = 1.0kHz
I
D(on)
= 12mA
V
GS(on)
= 12V
I
D(on)
= 12mA
V
GS(off)
= 12V
40
0.1
0.2
4.0 10
1.0
0.1
0.2
50 150
0.4
30
14
3.5
30
15
20
5.0
15
OFF CHARACTERISTICS
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 11/98
2N4391
ELECTRICAL CHARACTERISTICS (T
A
= 25C unless otherwise stated)
1) Pulse test : Pulse Width < 300s ,Duty Cycle < 2%
2) f
t
is defined as the frequency at which |h
fe
| extrapolates to untity.
ON CHARACTERISTICS
SWITCHING CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
V
nA
A
V
V
nA
A
mA
V

pF

ns
V
(BR)GSS
Gate Source Breakdown Voltage
1
I
GSS
Gate Reverse Current
V
GS
Gate Source Voltage
V
GS(f)
Gate Source Forward Voltage
I
D(off)
Drain Cut-off Current
I
DSS
Zero Gate voltage Drain Current
1
V
DS(on)
Drain Source OnVoltage
r
DS(on)
Static Drain Source On Resistance
C
iss
Input Capacitance
C
rss
Reverse Transfer Capacitance
r
ds(on)
DrainSource ON Resistance
t
on
TurnOn Time
t
off
TurnOff Time
t
r
RiseTime
t
f
FallTime

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