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A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Biosensors".

Deadline for manuscript submissions: closed (31 May 2020) | Viewed by 41141

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Special Issue Editors

Dr. He Tian

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Guest Editor

Institute of Microelectronics, Tsinghua University, Beijing 100084, China
Interests: sensors; graphene; actuator; 2D materials; nano devices
Special Issues, Collections and Topics in MDPI journals

Prof. Dr. Jian-Bin Xu

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1. Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, N.T.,Hong Kong SAR, China
2. Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, China
Interests: Near-field sensing; surface plasmonics; energy conversion
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Dr. Philip Feng

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Electrical Engineering & Computer Science, Case Western Reserve University, Cleveland, OH 44106, USA
Interests: Semiconductor Devices Physics; NEMS/MEMS; Circuits & Systems; Advanced Materials
Special Issues, Collections and Topics in MDPI journals

Prof. Dr. Yang Xu

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School of Information Science and Electronic Engineering, College of Microelectronics, Zhejiang University, Hangzhou 310027, China
Interests: Graphene; Graphene-Si heterostructure; photodectors; image sensor
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Two-dimensional materials (graphene, MoS2, Black Phosphorus et.) with the combination of nano-fabrications can enable high performance sensors or novel sensors with new funtionalities, which can open widely applications.

Two-dimensional materials can be the building blocks for various type of sensors, such as photodectors, strain/pressure sensors, gas sensors et. The two-dimensional-based sensors can be also enlarged by creating two-dimentional heterostructures. The two-dimentional heterostructures can be produced by combining 2D-2D, 2D-3D, 2D-1D, 2D-0D structures. This special Issue aims to introduce the two-dimensional materials with the combination of nano-fabrications. Topics in general include, but are not limited, to:

Two-dimensional materials/heterostructures-based sensors: 2D material growth, transfer, fabrication, device prototype and demo
Two-dimensional materials/heterostructures as photodectors
Graphene or other 2D materials-based strain/pressure sensor with high sensitivity
Two-dimensional materials as bio-sensors
Two-dimensional materials for acoustic or thermal sensing applications

Dr. He Tian
Prof. Dr. Jian-Bin Xu
Prof. Philip Feng
Prof. Dr. Yang Xu
Guest Editors

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Keywords

graphene
black Phosphorus
two-Dimensional Materials
photodetectors
strain/Pressure sensors
bio-sensors
acoustic or thermal sensing

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Published Papers (7 papers)

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11 pages, 1714 KiB

Open AccessArticle

Two-Channel Graphene pH Sensor Using Semi-Ionic Fluorinated Graphene Reference Electrode

by Dae Hoon Kim, Woo Hwan Park, Hong Gi Oh, Dong Cheol Jeon, Joon Mook Lim and Kwang Soup Song

Sensors 2020, 20(15), 4184; https://doi.org/10.3390/s20154184 - 28 Jul 2020

Cited by 11 | Viewed by 3596

Abstract

A reference electrode is necessary for the working of ion-sensitive field-effect transistor (ISFET)-type sensors in electrolyte solutions. The Ag/AgCl electrode is normally used as a reference electrode. However, the Ag/AgCl reference electrode limits the advantages of the ISFET sensor. In this work, we fabricated a two-channel graphene solution gate field-effect transistor (G-SGFET) to detect pH without an Ag/AgCl reference electrode in the electrolyte solution. One channel is the sensing channel for detecting the pH and the other channel is the reference channel that serves as the reference electrode. The sensing channel was oxygenated, and the reference channel was fluorinated partially. Both the channels were directly exposed to the electrolyte solution without sensing membranes or passivation layers. The transfer characteristics of the two-channel G-SGFET showed ambipolar field-effect transistor (FET) behavior (p-channel and n-channel), which is a typical characteristic curve for the graphene ISFET, and the value of V_Dirac was shifted by 18.2 mV/pH in the positive direction over the range of pH values from 4 to 10. The leakage current of the reference channel was 16.48 nA. We detected the real-time pH value for the two-channel G-SGFET, which operated stably for 60 min in the buffer solution. Full article

(This article belongs to the Special Issue Two-Dimensional Materials Based Sensors)

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Figure 1

Figure 1
XPS and Raman spectra of graphene. (a) Survey spectra of XPS on pristine, oxygenated and fluorinated graphene; (b) deconvoluted C 1s peaks on partially oxygenated graphene; (c) deconvoluted F 1s peaks on partially fluorinated graphene; (d) Raman spectra of pristine, oxygenated and fluorinated graphene. Full article ">Figure 2
Typical three-dimensional pH sensor using graphene field-effect transistor. (a) Schematic illustration of G-ISFET with Ag/AgCl reference electrode. For oxygenated G-ISFET: (b) IDS–VDS transfer characteristic with respect to VGS and (c) IDS–VGS transfer characteristic with respect to pH value. Full article ">Figure 3
Characteristic graphs of fluorinated G-ISFET: (a) IDS–VDS transfer characteristic with respect to VGS and (b) IDS–VGS transfer characteristic with respect to pH value. Full article ">Figure 4
Real-time detection of pH in electrolyte solution using (a) oxygenated G-ISFET and (b) fluorinated G-ISFET. (c) Long-term stability of oxygenated G-ISFET in a buffer solution of pH 8. Full article ">Figure 5
Two-dimensional pH sensor using graphene field-effect transistor. (a) Schematic illustration of two-channel graphene solution gate field-effect transistor (G-SGFET) and sensor image. For two-channel G-ISFET: (b) IDS–VDS transfer characteristic with respect to VGS and (c) IDS–VGS transfer characteristic with respect to pH value (d) IDS–VDS transfer characteristic with respect to pH value. (e) The Dirac point of the two-channel G-STGFET. Full article ">Figure 6
(a) Real-time detection of pH in electrolyte solution using two-channel G-SGFET. (b) The long-term stability of two-channel G-SGFET in a buffer solution of pH 8. Full article ">

11 pages, 5044 KiB

Open AccessArticle

Temperature Characteristics of a Pressure Sensor Based on BN/Graphene/BN Heterostructure

by Mengwei Li, Teng Zhang, Pengcheng Wang, Minghao Li, Junqiang Wang and Zewen Liu

Sensors 2019, 19(10), 2223; https://doi.org/10.3390/s19102223 - 14 May 2019

Cited by 19 | Viewed by 4179

Abstract

Temperature is a significant factor in the application of graphene-based pressure sensors. The influence of temperature on graphene pressure sensors is twofold: an increase in temperature causes the substrates of graphene pressure sensors to thermally expand, and thus, the graphene membrane is stretched, leading to an increase in the device resistance; an increase in temperature also causes a change in the graphene electrophonon coupling, resulting in a decrease in device resistance. To investigate which effect dominates the influence of temperature on the pressure sensor based on the graphene–boron nitride (BN) heterostructure proposed in our previous work, the temperature characteristics of two BN/graphene/BN heterostructures with and without a microcavity beneath them were analyzed in the temperature range 30–150 °C. Experimental results showed that the resistance of the BN/graphene/BN heterostructure with a microcavity increased with the increase in temperature, and the temperature coefficient was up to 0.25%°C⁻¹, indicating the considerable influence of thermal expansion in such devices. In contrast, with an increase in temperature, the resistance of the BN/graphene/BN heterostructure without a microcavity decreased with a temperature coefficient of −0.16%°C⁻¹. The linearity of the resistance change rate (ΔR/R)–temperature curve of the BN/graphene/BN heterostructure without a microcavity was better than that of the BN/graphene/BN heterostructure with a microcavity. These results indicate that the influence of temperature on the pressure sensors based on BN/graphene/BN heterostructures should be considered, especially for devices with pressure microcavities. BN/graphene/BN heterostructures without microcavities can be used as high-performance temperature sensors. Full article

(This article belongs to the Special Issue Two-Dimensional Materials Based Sensors)

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11 pages, 6909 KiB

Open AccessArticle

Effects of Acetone Vapor on the Exciton Band Photoluminescence Emission from Single- and Few-Layer WS₂ on Template-Stripped Gold

by Samantha Matthews, Chuan Zhao, Hao Zeng and Frank V. Bright

Sensors 2019, 19(8), 1913; https://doi.org/10.3390/s19081913 - 23 Apr 2019

Cited by 4 | Viewed by 4121

Abstract

Two-dimensional (2D) materials are being used widely for chemical sensing applications due to their large surface-to-volume ratio and photoluminescence (PL) emission and emission exciton band tunability. To better understand how the analyte affects the PL response for a model 2D platform, we used atomic force microscopy (AFM) and co-localized photoluminescence (PL) and Raman mapping to characterize tungsten disulfide (WS₂) flakes on template-stripped gold (TSG) under acetone challenge. We determined the PL-based response from single- and few-layer WS₂ arises from three excitons (neutral, A⁰; biexciton, AA; and the trion, A⁻). The A⁰ exciton PL emission is the most strongly quenched by acetone whereas the A⁻ PL emission exhibits an enhancement. We find the PL behavior is also WS₂ layer number dependent. Full article

(This article belongs to the Special Issue Two-Dimensional Materials Based Sensors)

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Full article ">Figure 1
Typical AFM results for a WS2 flake on TSG. (a) Typical AFM height (left) and phase (right) images. The dotted curve is used to outline the WS2 flake. Two vectors (V1 and V2) are shown in the height image. (b) Typical height profiles along the V1 (left) and V2 (right) vectors shown in panel a. The V1 and V2 vectors traverse largely single- and two-layer regions, respectively. Full article ">Figure 2
Typical single point Raman spectra and band assignments for different areas on a WS2 flake on TSG. (a) Single-layer region. (b) Few-layer region. Full article ">Figure 3
Typical WS2 layer count maps for a single WS2 flake on TSG. (a) I2LA/IA1g intensity ratio map. (b) Δ (E2LA − EA1g) band energy difference map. (c) Combined a and b WS2 layer count map. Full article ">Figure 4
Typical total PL emission intensity maps (1.8–2.1 eV) for a single WS2 flake on TSG. (a) Air atmosphere. (b) Acetone atmosphere. (c) PLAir/PLAcetone intensity response map. The black and white dots indicate single- and few-layer WS2 regions determined from <a href="#sensors-19-01913-f003" class="html-fig">Figure 3</a>c. Full article ">Figure 5
Typical single point PL emission spectra and curve fits from specific locations on the WS2 flake shown in <a href="#sensors-19-01913-f004" class="html-fig">Figure 4</a>. (a) Spectra from a single-layer WS2 region. (b) Spectra from a few-layer WS2 region. (1) Spectra recorded in air. (2) Spectra recorded under acetone vapor. (3) Energy-dependent PLAir/PLAcetone response spectra. The dashed line in spectra 3 located at 1.0 denotes no quenching. Spectral regions with PLAir/PLAcetone < 1 exhibit a PL enhancement under acetone vapor. Spectral regions with PLAir/PLAcetone > 1 exhibit a PL quench under acetone vapor. Full article ">Figure 6
Typical PL emission A0, AA, and A− exciton band amplitude maps for a single WS2 flake on TSG under air and acetone vapors. Maps are generated by curve fitting PL emission spectra at each pixel across the entire flake. (a,b,c) Maps in air. (d,e,f) Maps under acetone vapor. Full article ">Figure 7
Typical PL emission A0, AA, and A− exciton band maxima (eV) maps for a single WS2 flake on TSG under air and acetone vapors. Maps are generated by curve fitting PL emission spectra at each pixel across the entire flake. (a,b,c) Maps in air. (d,e,f) Maps under acetone vapor. Full article ">Figure 8
Typical PL emission A0, AA, and A− exciton band FWHM (eV) maps for a WS2 flake on TSG under air and acetone vapors. Maps are generated by curve fitting PL emission spectra at each pixel across the entire flake. (a,b,c) Maps in air. (d,e,f) Maps under acetone vapor. Full article ">Figure 9
Typical acetone vapor-dependent PL emission A0, AA, and A− exciton band intensity ratio (PLAir/PLAcetone), band energy maxima difference (Emax,Air − Emax,Acetone), and band FWHM energy difference (FWHMAir − FWHMAcetone) maps for a single WS2 flake on TSG. Full article ">Figure 10
Model of the overall effect of acetone on exciton bands. A WS2 flake in an air environment denoting single- and few-layer areas. The red arrows indicate a quench in PL and the blue arrow indicates an enhancement. The arrow length represents the effect magnitude. Full article ">

11 pages, 2589 KiB

Open AccessArticle

Controlled Growth of an Mo₂C—Graphene Hybrid Film as an Electrode in Self-Powered Two-Sided Mo₂C—Graphene/Sb₂S_0.42Se_2.58/TiO₂ Photodetectors

by Zhe Kang, Zhi Zheng, Helin Wei, Zhi Zhang, Xinyu Tan, Lun Xiong, Tianyou Zhai and Yihua Gao

Sensors 2019, 19(5), 1099; https://doi.org/10.3390/s19051099 - 4 Mar 2019

Cited by 31 | Viewed by 5341

Abstract

The monotonic work function of graphene makes it difficult to meet the electrode requirements of every device with different band structures. Two-dimensional (2D) transition metal carbides (TMCs), such as carbides in MXene, are considered good candidates for electrodes as a complement to graphene. Carbides in MXene have been used to make electrodes for use in devices such as lithium batteries. However, the small lateral size and thermal instability of carbides in MXene, synthesized by the chemically etching method, limit its application in optoelectronic devices. The chemical vapor deposition (CVD) method provides a new way to obtain high-quality ultrathin TMCs without functional groups. However, the TMCs film prepared by the CVD method tends to grow vertically during the growth process, which is disadvantageous for its application in the transparent electrode. Herein, we prepared an ultrathin Mo₂C—graphene (Mo₂C—Gr) hybrid film by CVD to solve the above problem. The work function of Mo₂C—Gr is between that of graphene and a pure Mo₂C film. The Mo₂C—Gr hybrid film was selected as a transparent hole-transporting layer to fabricate novel Mo₂C—Gr/Sb₂S_0.42Se_2.58/TiO₂ two-sided photodetectors. The Mo₂C—Gr/Sb₂S_0.42Se_2.58/TiO₂/fluorine-doped tin oxide (FTO) device could detect light from both the FTO side and the Mo₂C—Gr side. The device could realize a short response time (0.084 ms) and recovery time (0.100 ms). This work is believed to provide a powerful method for preparing Mo₂C—graphene hybrid films and reveals its potential applications in optoelectronic devices. Full article

(This article belongs to the Special Issue Two-Dimensional Materials Based Sensors)

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Figure 1
The schematic diagrams of Mo2C crystal growth and the novel Mo2C—Gr/Sb2S0.42Se2.58/TiO2/FTO vertical heterostructure photodetector. (a) Schematic diagram of the chemical vapor deposition (CVD) method to grown Mo2C—graphene. (b) The schematic diagram of the transfer of the Mo2C—Gr layer. (c) The schematic diagram of the self-driven two-sided photodetector. Full article ">Figure 2
The schematic diagrams (upper) and SEM images (bottom) of Mo2C crystal and Mo2C—Gr growth under the various ratios of methane to hydrogen. (a) 0, (b) 1:600, (c) 1:100. Full article ">Figure 3
The schematic diagram and optical image showing the growth of Mo2C and Mo2C—Gr under various ratios of methane to hydrogen and various growth times. (a) The schematic diagram of the distribution of Mo2C crystals on the Cu/Mo substrate at the ratio of 1:600. (b–e) The distribution of Mo2C crystals on the Cu/Mo substrate with a growth time of 10, 30, 60 and 120 min, respectively. (f) The schematic diagram of the distribution of the grown Mo2C—Gr on the Cu/Mo substrate at the ratio of 1:100. (g–j) The growth of Mo2C—Gr and distribution of Mo2C crystals on the Cu/Mo substrate with a growth time of 10, 30, 60 and 120 min, respectively. Full article ">Figure 4
The characterization analysis of Mo2C. (a) The element distribution of Mo2C on Cu. (b) The transmission electron microscope (TEM) image. (c) The high-resolution TEM image of Mo2C. The inset image is a magnified image of a selected region. (d) The selected area electron diffraction (SAED) pattern along the [100] zone axis. Full article ">Figure 5
The spectral analysis of Mo2C and Mo2C—Gr. (a) The Raman spectrum of Mo2C. The inset is the optical image of Mo2C. (b) The X-ray diffraction patterns of Mo2C. (c) The UPS spectra of graphene (black) and Mo2C—Gr (red) on n-type silicon. The inset of the left panel shows the magnified region from 18 eV to 15 eV. Full article ">Figure 6
The optoelectronic characteristics of the Mo2C—Gr/Sb2S0.42Se2.58/TiO2 photodetector. (a) The schematic diagram of photodetectors. (b) The energy band diagram of Mo2C—Gr, Sb2S0.42Se2.58, TiO2 and FTO in the photodetector. (c) Dark current-voltage of Mo2C—Gr/Sb2S0.42Se2.58/TiO2 photodetectors. (d) Current-voltage curves of Mo2C/Sb2S0.42Se2.58/TiO2, Mo2C—Gr/Sb2S0.42Se2.58/TiO2 and Gr/Sb2S0.42Se2.58/TiO2 photodetectors, respectively, under 1.5 G illumination (100 mW/cm−2). Full article ">Figure 7
The detection performance of the Mo2C—Gr/Sb2S0.42Se2.58/TiO2/FTO photodetector under illumination from the Mo2C—Gr side. (a) The current-time curves of the photodetector under a 2 mW/cm2 illumination with a wavelength of 400 nm to 1000 nm at 0 bias. (b) Self-powered photoresponse under an illumination of 650 nm light. (c) At various bias voltages, the photoresponse under a 2.5 mW/cm2 illumination with 650 nm wavelength. (d) The current-time curves of the photodetector in atmosphere and vacuum under a 2 mW/cm2 illumination of 650 nm wavelength light at 0 bias. (e) Photoresponse at various temperatures. (f) The voltage response and recovery time of the photodetector. Full article ">Figure 8
The impedance analysis of the photodetector. (a) The schematic equivalent circuit diagram of the Mo2C—Gr/Sb2S0.42Se2.58/TiO2/FTO photodetector. (b,c) Nyquist diagram and frequency-dependent relationships of the Mo2C—Gr/Sb2S0.42Se2.58/TiO2/FTO photodetector in the dark (black) and under illumination (red), respectively. CPE: constant-phase element. Full article ">

11 pages, 2619 KiB

Open AccessArticle

A Sprayed Graphene Pattern-Based Flexible Strain Sensor with High Sensitivity and Fast Response

by Wei Xu, Tingting Yang, Feng Qin, Dongdong Gong, Yijia Du and Gang Dai

Sensors 2019, 19(5), 1077; https://doi.org/10.3390/s19051077 - 3 Mar 2019

Cited by 31 | Viewed by 6208

Abstract

Flexible strain sensors have a wide range of applications in biomedical science, aerospace industry, portable devices, precise manufacturing, etc. However, the manufacturing processes of most flexible strain sensors previously reported have usually required high manufacturing costs and harsh experimental conditions. Besides, research interests are often focused on improving a single attribute parameter while ignoring others. This work aims to propose a simple method of manufacturing flexible graphene-based strain sensors with high sensitivity and fast response. Firstly, oxygen plasma treats the substrate to improve the interfacial interaction between graphene and the substrate, thereby improving device performance. The graphene solution is then sprayed using a soft PET mask to define a pattern for making the sensitive layer. This flexible strain sensor exhibits high sensitivity (gauge factor ~100 at 1% strain), fast response (response time: 400–700 μs), good stability (1000 cycles), and low overshoot (<5%) as well. Those processes used are compatible with a variety of complexly curved substrates and is expected to broaden the application of flexible strain sensors. Full article

(This article belongs to the Special Issue Two-Dimensional Materials Based Sensors)

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Full article ">Figure 1
Schematic illustration of graphene flexible strain sensor fabrication process. Full article ">Figure 2
(a–b) Photograph and schematic images of the strain sensor using polydimethylsiloxane (PDMS) substrate; (c) optical image of PDMS substrate treated by oxygen plasma after 10 pre-stretch cycles (0–10% strain range); (d) SEM image of the graphene film on PDMS after 500 loading and unloading (0–1% strain range) cycles. Full article ">Figure 3
The flexible strain sensor shows high performances. (a) Resistance changes of the strain sensor under 0–1% strain at the 1000th cycle of loading/unloading test; (b) the response time is within the range of 400 to 700 μs under the impact acceleration of 500 g; (c) the measurement of the creep characteristic, blue curve represents the strain measurement curve of sensor with time and the red one is the actual ΔR/R0 measurement curve; (d) ΔR/R0 value of the sensor at strain 1% under 1000 cyclic measurement of 0–1% strain, sampling every 50 cycles. Full article ">Figure 4
The finite element method (FEM) simulation analysis of the slip of graphene sheets when the substrate is under uniaxial stretching. (a) The strain distribution of the sensor (b) and (c) is the strain simulation of graphene sheet and PDMS substrate respectively; (d) the relative movement of the graphene sheet with substrate before stretching and (e) after stretching; (f) the schematic microscopic stacking of graphene sheets before stretching and (g) after stretching. Full article ">Figure 5
The sensors are applicable to detect complex curved surfaces. (a) Illustration of micro-strain detection on the complex model surface under light illumination; (b) The change of ΔR/R0 of sensor with illumination time. Full article ">

8 pages, 2329 KiB

Open AccessArticle

Sensitivity Enhancement of a Surface Plasmon Resonance with Tin Selenide (SnSe) Allotropes

by Xiaoyu Dai, Yanzhao Liang, Yuting Zhao, Shuaiwen Gan, Yue Jia and Yuanjiang Xiang

Sensors 2019, 19(1), 173; https://doi.org/10.3390/s19010173 - 5 Jan 2019

Cited by 58 | Viewed by 5359

Abstract

Single layers of tin selenide (SnSe), which have a similar structure as graphene and phosphorene, also show excellent optoelectronic properties, and have received much attention as a two-dimensional (2D) material beyond other 2D material family members. Surface plasmon resonance (SPR) sensors based on three monolayer SnSe allotropes are investigated with the transfer matrix method. The simulated results have indicated that the proposed SnSe-containing biochemical sensors are suitable to detect different types of analytes. Compared with the conventional Ag-only film biochemical sensor whose sensitivity is 116°/RIU, the sensitivities of these SnSe-based biochemical sensors containing α-SnSe, δ-SnSe, ε-SnSe, were obviously increased to 178°/RIU, 156°/RIU and 154°/RIU, respectively. The diverse biosensor sensitivities achieved with these three SnSe allotropes suggest that these 2D materials can adjust SPR sensor properties. Full article

(This article belongs to the Special Issue Two-Dimensional Materials Based Sensors)

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Figure 1
Sketch diagram of the SPR biochemical sensor made using three types of SnSe allotropes to enhance the sensitivity. Full article ">Figure 2
Measured refractive indices for the three SnSe allotropes [<a href="#B22-sensors-19-00173" class="html-bibr">22</a>]. Full article ">Figure 3
Variation of reflectivity with incidence angle for (a) the conventional biochemical sensor based on a simplex Ag film, (b–d) are the proposed biochemical sensors with α-SnSe, δ-SnSe, ε-SnSe, respectively. Full article ">Figure 4
(a) Change of reflectivity relative to incidence angles, (b) the electric field distributions of the biochemical sensors proposed by SnSe from ns = 1.33 to ns = 1.37, (c) incidence angles of three SnSe allotropes from ns = 1.33 to ns = 1.37, (d) the variation of the sensitivities of the proposed biochemical sensors with different number of SnSe layers with the refractive indices of the sensing medium. Full article ">Figure 5
(a) Change of the reflectance of α-SnSe biosensor, (b) variation of sensitivity with respect to different numbers of SnSe allotrope layers, (c) change of resonance angle with respect to different layer numbers of SnSe allotropes, (d) the electric field distribution for the proposed SPR sensor. Full article ">

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27 pages, 7173 KiB

Open AccessReview

Structure-Property Relationships in Graphene-Based Strain and Pressure Sensors for Potential Artificial Intelligence Applications

by Zewei Luo, Xiaotong Hu, Xiyue Tian, Chen Luo, Hejun Xu, Quanling Li, Qianhao Li, Jian Zhang, Fei Qiao, Xing Wu, V. E. Borisenko and Junhao Chu

Sensors 2019, 19(5), 1250; https://doi.org/10.3390/s19051250 - 12 Mar 2019

Cited by 77 | Viewed by 10472

Abstract

Wearable electronic sensing devices are deemed to be a crucial technology of smart personal electronics. Strain and pressure sensors, one of the most popular research directions in recent years, are the key components of smart and flexible electronics. Graphene, as an advanced nanomaterial, exerts pre-eminent characteristics including high electrical conductivity, excellent mechanical properties, and flexibility. The above advantages of graphene provide great potential for applications in mechatronics, robotics, automation, human-machine interaction, etc.: graphene with diverse structures and leverages, strain and pressure sensors with new functionalities. Herein, the recent progress in graphene-based strain and pressure sensors is presented. The sensing materials are classified into four structures including 0D fullerene, 1D fiber, 2D film, and 3D porous structures. Different structures of graphene-based strain and pressure sensors provide various properties and multifunctions in crucial parameters such as sensitivity, linearity, and hysteresis. The recent and potential applications for graphene-based sensors are also discussed, especially in the field of human motion detection. Finally, the perspectives of graphene-based strain and pressure sensors used in human motion detection combined with artificial intelligence are surveyed. Challenges such as the biocompatibility, integration, and additivity of the sensors are discussed as well. Full article

(This article belongs to the Special Issue Two-Dimensional Materials Based Sensors)

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