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Article

High-Performance Vis–NIR Photodetectors Based on Two-Dimensional Bi2Te3 Thin Film and Applications

by
Zhendong Fu
1,
Xuefang Liu
2,
Fuguo Wang
2,3,
Langlang Du
2,
Wenbao Sun
1,*,
Yueyu Sun
1,
Xiaoxian Song
2,3,*,
Haiting Zhang
2 and
Jianquan Yao
2,3
1
Center of Intelligent Opto-Electric Sensors, Tianjin Jinhang Technical Physics Institute, Tianjin 300308, China
2
School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, China
3
School of Precision Instrument and Opto-Electronics Engineering, Tianjin University, Tianjin 300072, China
*
Authors to whom correspondence should be addressed.
Photonics 2024, 11(11), 1052; https://doi.org/10.3390/photonics11111052
Submission received: 10 October 2024 / Revised: 6 November 2024 / Accepted: 7 November 2024 / Published: 9 November 2024
(This article belongs to the Special Issue Advanced Photonics Metamaterials and Metasurfaces: Science and Applications, 2nd Edition)
Browse Figures
Figure 1
<p>(<b>a</b>) Lattice structure of Bi<sub>2</sub>Te<sub>3</sub>. (<b>b</b>) Structure diagram of Bi<sub>2</sub>Te<sub>3</sub> PD. (<b>c</b>) Surface SEM of Bi<sub>2</sub>Te<sub>3</sub> thin film. (<b>d</b>) Energy band diagram of Bi<sub>2</sub>Te<sub>3</sub> PD, arrows indicate the direction of electron and hole flow.</p> "> Figure 2
<p>(<b>a</b>) AFM of Bi<sub>2</sub>Te<sub>3</sub> thin film samples. (<b>b</b>) Thickness of Bi<sub>2</sub>Te<sub>3</sub> thin film samples. (<b>c</b>) Raman spectrum of Bi<sub>2</sub>Te<sub>3</sub> thin film samples. (<b>d</b>) X-ray diffraction pattern of Bi<sub>2</sub>Te<sub>3</sub> thin film samples.</p> "> Figure 3
<p>(<b>a</b>) I-V curves of Bi<sub>2</sub>Te<sub>3</sub> PD under 405 nm illumination. (<b>b</b>) I-V curves of Bi<sub>2</sub>Te<sub>3</sub> PD under 532 nm illumination. (<b>c</b>) I-V curves of Bi<sub>2</sub>Te<sub>3</sub> PD under 808 nm illumination.</p> "> Figure 4
<p>Time-dependent photoresponse of the Bi<sub>2</sub>Te<sub>3</sub> PD under (<b>a</b>) 405 nm, (<b>b</b>) 532 nm and (<b>c</b>) 808 nm laser irradiation. Single-period response for rise and fall times under (<b>d</b>) 405 nm, (<b>e</b>) 532 nm and (<b>f</b>) 808 nm laser irradiation.</p> "> Figure 5
<p><span class="html-italic">R</span> and <span class="html-italic">D*</span> of Bi<sub>2</sub>Te<sub>3</sub> PD under (<b>a</b>) 405 nm, (<b>b</b>) 532 nm and (<b>c</b>) 808 nm laser irradiation at <span class="html-italic">V<sub>DS</sub></span> = 2 V.</p> "> Figure 6
<p>(<b>a</b>) Single-point scanning imaging system based on Bi<sub>2</sub>Te<sub>3</sub> PD. (<b>b</b>) Imaging results of digital images at a 532 nm wavelength.</p> ">
Versions Notes

Abstract

:
Two-dimensional materials have excellent optoelectronic properties and have great significance in the field of photodetectors. We have prepared a thin film photodetector based on bismuth telluride (Bi2Te3) topological insulator using dual-temperature-zone vapor deposition technology. Due to the high-quality lattice structure of Bi2Te3 and the uniform and dense surface morphology of the Bi2Te3 thin film, the device exhibits excellent photoelectric response and Vis–NIR spectral range. Under 405 nm illumination, the responsivity is 5.6 mA/W, the specific detectivity is 1.22 × 107 Jones, and the response time is 262/328 ms. We designed a photodetector single-point scanning imaging system and successfully achieved high-resolution imaging at a wavelength of 532 nm. This work provides guidance for the application of two-dimensional materials, especially Bi2Te3, in the fields of photodetectors and imaging.

1. Introduction

Photodetectors (PDs) can convert light signals into electrical signals and have broad application prospects in sensing [1], measurement [2], imaging [3], artificial nociceptors [4], health monitoring [5] and communication fields [6]. Materials such as perovskite [7], quantum dot [8] and graphene [9] are considered the future of PDs. Two-dimensional (2D) materials have become promising candidates for optoelectronic devices due to their ultra-thin thickness, tunable bandgap, free dangling bonds and mechanical flexibility [10]. 2D materials do not have lattice mismatches because they are covalently bonded in-plane and out-of-plane bonded by weak van der Waals forces [11]. One such 2D material is Bi2Te3, a V-VI semiconductor compound with a rhombic crystal structure, belonging to the R-3m space group [12]. The Bi-Te in the crystal plane within the layer is bound by covalent and ionic bonds [13]. At the same time, Bi2Te3 is a topological insulator with an insulating body state and conductive surface state [14], and its electrons and holes can be quickly transferred through the surface state [15]. All of the above characteristics make Bi2Te3 an ideal material in the field of PDs, which has important value for imaging research.
Bi2Te3 PDs have been reported, including nanowires [16], nanobelts [17], heterojunction [18] and photoelectrochemical types [19]. Wang et al. prepared polycrystalline Bi2Te3 thin films using pulsed laser deposition at different growth temperatures, which exhibited excellent optoelectronic properties in the infrared band [20]. Zhang et al. used molecular beam epitaxy technology to directly grow high-quality Bi2Te3 topological insulator layers on GaAs chips and prepared heterojunction array PDs with a broadband light response [21]. However, nanowire and nanobelt PDs have shortcomings in response time, performance, integration, commercialization, and manufacturing cost. The preparation process of heterojunction PDs is complex, costly, and requires consideration of energy level matching for different materials [22]. The photoelectric chemical type Bi2Te3 PD has low responsivity and service life [23]. Therefore, the research on Bi2Te3 thin film PDs has important potential and value.
In this paper, we have grown continuous and high-quality Bi2Te3 thin films on substrates using a dual-temperature-zone vapor deposition method. Under 405 nm illumination, the responsivity (R) of the device is 5.6 mA/W, the specific detectivity (D*) is 1.22 × 107 Jones and the response time is 262/328 ms. The test results show that the Bi2Te3 thin-film material has excellent broadband spectral response and great potential for application in modern optoelectronic detection. In order to study the imaging performance of the device, we constructed a single-point scanning imaging system based on a Bi2Te3 PD and successfully obtained high-resolution imaging results for four digital images of “8358” at a wavelength of 532 nm.

2. Experimental

2.1. Material Synthesis and Device Preparation

Substrates were successively ultrasonically cleaned with acetone, isopropanol and deionized water. As shown in Figure S1, Bi2Te3 thin films were grown using a tube furnace through vapor deposition. Bi2O3 (99.995%, 0.1 g) powder was used as the Bi source, and Te (99.9999%, 1 g) granules were used as the Te source. Argon gas and hydrogen gas at flow rates of 200 sccm and 15 sccm, respectively were used as growth carrier gas. The growth equipment uses a dual-temperature-zone tube furnace, with Bi2O3 placed in the high-temperature zone and heated to 700 °C, and Te placed in the low-temperature zone and heated to 500 °C. The substrate was placed 7 cm below Bi2O3, at a temperature of about 450 °C, and grown for 15 min. Bi2Te3 thin films were grown on the substrate. Finally, 10 nm chromium and 300 nm gold were grown on the Bi2Te3 thin films by vacuum thermal evaporation to prepare Bi2Te3 PDs. The electrode structure is shown in Figure S2; it has a channel length of 0.05 mm and a channel width of 2.5 mm.

2.2. Material Characterization and Device Measurement

X-ray diffraction (XRD) (Bruker, Germany) was used to obtain X-ray diffraction patterns of the Bi2Te3 films. Field emission scanning electron microscopy (FE-SEM) (FEI, America) was used to characterize the surface of the Bi2Te3 films. Raman spectroscopy (Hrobia, Japan) was used to analyze internal molecular vibration patterns and intermolecular forces. The thickness and surface roughness images of the Bi2Te3 thin films were obtained using atomic force microscopy (AFM) (Bruker, Germany).
Two Au electrodes are connected to the two output ports of a Keithley 2400 as source and drain, and the channel current (IDS) of the device was detected under the action of the applied drain-source voltage (VDS). The photoelectric test is carried out under 405 nm, 532 nm and 808 nm illumination.

3. Results and Discussion

Bi2Te3 has a rhomboid structure belonging to the R-3m space group (a = b = 4.386 Å, c = 30.497 Å, and α = β = 90°, γ = 120°) [24]. As shown in Figure 1a, the crystal structure of Bi2Te3 consists of five atomic layers Te-Bi-Te-Bi-Te [25,26], where the bonds within each quintuple layer are formed through strong covalent bonds, while the bonds between quintuple layers are formed through weak van der Waals forces [24]. This out-of-plane van der Waals interaction without surface dangling bonds helps to reduce the recombination noise generated by charge carriers [27,28]. The structure diagram of Bi2Te3 PD is shown in Figure 1b. The Bi2Te3 thin films are deposited on Si/SiO2 substrates, and electrodes are evaporated onto the Bi2Te3 thin films. The surface SEM of the Bi2Te3 thin film shows a dense and uniform morphology as shown in Figure 1c, which gives the Bi2Te3 PD excellent optoelectronic performance. The energy band diagram is shown in Figure 1d. Due to the high crystal quality of Bi2Te3, the localization effect of electrons is weak, exhibiting an enlarged excitable electron pool [20]. The carrier transport behavior can be explained by the carrier transport mechanism under illumination [29], such as carrier transitions, hot electron emissions and tunneling currents [30]. When the incident light is irradiated on the channel, the energy of the incident photon excites the transition of electrons from the valence band to the conduction band in Bi2Te3. Due to energy level differences, electrons and holes will transfer from Bi2Te3 to the electrodes on both sides, forming a photocurrent.
Figure 2a shows an AFM image of the Bi2Te3 thin film. The height distribution is shown in Figure 2b along the white dashed lines labeled in the AFM image, which shows that the thickness of the Bi2Te3 thin film used to fabricate the PD is about 12.31 nm. The Bi2Te3 thin film exhibits good surface roughness with a root mean square roughness of 1.11 nm. The Raman spectrum of Bi2Te3 is shown in Figure 2c, and two characteristic peaks can be observed, corresponding to the Eg2 (123 cm−1) and A1g2 (142 cm−1) modes of the Bi2Te3 layer [31]. In order to further determine the crystal structure of the prepared Bi2Te3 and analyze the related properties, Bi2Te3 was characterized by XRD. The XRD diffraction pattern is shown in Figure 2d, with four diffraction peaks located at 2θ = 23.56°, 27.59°, 38.8°, and 40.5° corresponding to the (101), (015), (1.0.10), and (110) crystal planes of Bi2Te3 [32].
I-V curves of the Bi2Te3 PD are shown in Figure 3, Ohmic contact is formed between the Bi2Te3 thin film and Cr/Au metal electrodes [11]. The IDS was modulated by VDS, thus, the device worked as a photoconductive device. We studied the IDS under different bias voltages and optical powers. Figure 3a–c show the IDS of Bi2Te3 PDs at wavelengths of 405 nm, 532 nm and 808 nm at different incident powers. As can be seen, IDS is highly dependent on bias voltage and incident light power. As the bias voltage increases, the IDS shows an approximately linear increasing trend. Because bias is conducive to the separation and transport of photon-excited charge carriers, the integration amount of photogenerated charge carriers will significantly increase with an increase in the electric field [33]. It can be seen that at higher excitation intensities, more electron–hole pairs are generated, which is consistent with the observed fact that the IDS increases monotonically with increasing excitation power [34].
The light-response speed is another key factor that determines the ability of PD to track fast-switching light signals [35]. The time-dependent response curves of the Bi2Te3 PD at VDS = 2 V are shown in Figure 4, the Bi2Te3 PD exhibited good periodic on-off switching. Optical response measurements were conducted under alternating on/off laser illumination. Figure 4a shows the photoelectric switching behavior under 405 nm laser irradiation at different excitation intensities and a 2 V bias voltage, indicating that the Bi2Te3 PD exhibits highly reversible and stable photoelectric switching behavior when laser irradiation alternates on/off [36]. In order to further understand the optical response of the Bi2Te3 PD, the performance of the device in air was measured under laser irradiation at 532 nm and 808 nm at a bias voltage of 2 V, as shown in Figure 4b,c. The IDS gradually increases with an increase in light intensity, indicating that the photoconductive mechanism is the operating principle of the device [37]. The Bi2Te3 thin film has a unique topological insulator structure, and its carrier dynamics exhibit significant light-intensity dependence. The different electronic structures of surface and bulk electrons significantly affect the number of electrons excited by light [20]. The single period response is shown in Figure 4d,e, Under 405 nm, 532 nm and 808 nm illumination, the Bi2Te3 PD had the response speed of 328/338 ms, 262/328 ms and 365/277 ms, respectively.
R is defined as the ratio of the photocurrent or photovoltage of a PD to the incident light power [38]. D* represents the signal-to-noise ratio generated by each unit of irradiation power of a PD at unit bandwidth and unit area, and is used to compare the detection capabilities of different PDs [39]. The R and D* of the Bi2Te3 PD are shown in Figure 5. The R is calculated using the following equation [20]
R = Δ I P = I i l l u − I d a r k E e × A
where Iillu represents the channel current under illumination, and Idark represents the dark current. P, A and Ee are laser power, effective channel area and irradiance density, respectively. The D* is calculated by the following equation [20]
D * = R A 2 e I d a r k
As shown in Figure 5, under 405 nm illumination (66 mW/cm2), 532 nm illumination (78 mW/cm2) and 808 nm illumination (70 mW/cm2), the device has a maximum R of 5.6 mA/W, 5.3 mA/W and 4.8 mA/W, and a D* of 1.22 × 107 Jones, 1.17 × 107 Jones and 1.13 × 107 Jones, respectively. The values of R and D* decrease with the growing light intensity, which can be attributed to the increased recombination of photoexcited carriers under high light intensity [40]. External quantum efficiency (EQE) is another significant parameter for evaluating the performance of PD and is denoted by:
E Q E = h c R λ q λ
where h is Plank’s constant, c is the light velocity, q is the electronic charge, and λ is the incident light wavelength [41]. The EOE of the device under different optical power conditions is shown in Figure S3. It can be seen from the figure that the maximum EQE value is obtained at a wavelength of 405 nm, with a value of 1.7%.
In order to study the imaging performance of the device, we built a single-point scanning imaging system based on the Bi2Te3 PD, as shown in Figure 6a. The system includes a 532 nm laser, a 2D scanning platform, an image mask, and a Bi2Te3 PD. In the system, the laser fires a laser at a pre-designed image mask, such as our design of “8358” four digital images. By moving the mask, the laser can shine on different parts of the mask. With the movement of the mask, we can collect the change in the photocurrent signal of the device and record the photocurrent value at each position. Then, the changes in the optical signal are processed and calculated by an appropriate algorithm to generate a mapped image of the photocurrent. We successfully obtained the imaging results of four digital images of “8358” at a 532 nm wavelength, as shown in Figure 6b. From this result, we can speculate that similar effects can also be achieved at wavelengths of 405 nm and 808 nm. Based on these imaging results, the Bi2Te3 PD shows great potential at normal atmospheric pressure and room temperature and plays a role in promoting visible light imaging. This indicates that the Bi2Te3 device has good application prospects in imaging and is worthy of further research and exploration.
The performance of our Bi2Te3 PD and Bi2Te3 PDs in the literature were compared, as shown in Table 1. Compared with thin-film devices, the Bi2Te3 PD prepared by us has a faster response speed, with slightly lower R and D*. Compared with nanosheets and nanoplate devices, our Bi2Te3 PD has relatively better performance. If we continue to study the process and device structure direction, we believe that we can obtain Bi2Te3 PDs with better performance. For example, improving the preparation process of Bi2Te3 to enhance film quality can accelerate device performance. In addition, the performance of the device can be improved by adding strategies, preparing dielectric layers, and constructing heterostructures.

4. Conclusions

In summary, we prepared a Bi2Te3 PD by dual-temperature-zone vapor deposition, and the device exhibited excellent optoelectronic performance, which is attributed to the high-quality lattice structure and dense and uniform thin film. Under 405 nm illumination, the R of the prepared Bi2Te3 PD was 5.6 mA/W, D* was 1.22 × 107 Jones, and the response time was 262/328 ms. We constructed a single-point scanning imaging system based on the prepared Bi2Te3 PD and successfully obtained high-resolution imaging results for four digital images of “8358” at a wavelength of 532 nm. This work provides guidance for the application of 2D semiconductor materials, especially Bi2Te3, in the fields of photoelectric devices and imaging.

Supplementary Materials

The following supporting information can be downloaded at: https://www.mdpi.com/article/10.3390/photonics11111052/s1, Figure S1: Schematic diagram of the preparation process of Bi2Te3 thin-film samples; Figure S2: The electrode structure of the Bi2Te3 PD; Figure S3: The EOE of the device under different optical power conditions.

Author Contributions

Z.F., H.Z. and X.L. designed and conducted experiments. X.S. and F.W. participated in the analysis of data. W.S., L.D. and Y.S. designed the experimental scheme. Z.F. and X.L. wrote the manuscript. J.Y. revised the manuscript. All authors have read and agreed to the published version of the manuscript.

Funding

This research received no external funding.

Institutional Review Board Statement

Not applicable.

Informed Consent Statement

Not applicable.

Data Availability Statement

The data presented in this study are available on request from the corresponding author.

Acknowledgments

This research was supported by the National Key R&D Program of China (2019YFA0705204), the National Natural Science Foundation of China (62005107, 62005074), the Natural Science Foundation of Jiangsu Province (BK20180862, BK20190839) and the China Postdoctoral Science Foundation (2019M651725).

Conflicts of Interest

The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

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Figure 1. (a) Lattice structure of Bi2Te3. (b) Structure diagram of Bi2Te3 PD. (c) Surface SEM of Bi2Te3 thin film. (d) Energy band diagram of Bi2Te3 PD, arrows indicate the direction of electron and hole flow.
Figure 1. (a) Lattice structure of Bi2Te3. (b) Structure diagram of Bi2Te3 PD. (c) Surface SEM of Bi2Te3 thin film. (d) Energy band diagram of Bi2Te3 PD, arrows indicate the direction of electron and hole flow.
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Figure 2. (a) AFM of Bi2Te3 thin film samples. (b) Thickness of Bi2Te3 thin film samples. (c) Raman spectrum of Bi2Te3 thin film samples. (d) X-ray diffraction pattern of Bi2Te3 thin film samples.
Figure 2. (a) AFM of Bi2Te3 thin film samples. (b) Thickness of Bi2Te3 thin film samples. (c) Raman spectrum of Bi2Te3 thin film samples. (d) X-ray diffraction pattern of Bi2Te3 thin film samples.
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Figure 3. (a) I-V curves of Bi2Te3 PD under 405 nm illumination. (b) I-V curves of Bi2Te3 PD under 532 nm illumination. (c) I-V curves of Bi2Te3 PD under 808 nm illumination.
Figure 3. (a) I-V curves of Bi2Te3 PD under 405 nm illumination. (b) I-V curves of Bi2Te3 PD under 532 nm illumination. (c) I-V curves of Bi2Te3 PD under 808 nm illumination.
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Figure 4. Time-dependent photoresponse of the Bi2Te3 PD under (a) 405 nm, (b) 532 nm and (c) 808 nm laser irradiation. Single-period response for rise and fall times under (d) 405 nm, (e) 532 nm and (f) 808 nm laser irradiation.
Figure 4. Time-dependent photoresponse of the Bi2Te3 PD under (a) 405 nm, (b) 532 nm and (c) 808 nm laser irradiation. Single-period response for rise and fall times under (d) 405 nm, (e) 532 nm and (f) 808 nm laser irradiation.
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Figure 5. R and D* of Bi2Te3 PD under (a) 405 nm, (b) 532 nm and (c) 808 nm laser irradiation at VDS = 2 V.
Figure 5. R and D* of Bi2Te3 PD under (a) 405 nm, (b) 532 nm and (c) 808 nm laser irradiation at VDS = 2 V.
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Figure 6. (a) Single-point scanning imaging system based on Bi2Te3 PD. (b) Imaging results of digital images at a 532 nm wavelength.
Figure 6. (a) Single-point scanning imaging system based on Bi2Te3 PD. (b) Imaging results of digital images at a 532 nm wavelength.
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Table 1. Performance comparison of Bi2Te3 PDs.
Table 1. Performance comparison of Bi2Te3 PDs.
Materials R (mA/W)D* (Jones)Response Time (ms)Ref
Bi2Te3 thin films56.981.82 × 1091.06/2.88[20]
Bi2Te3 nanoplates55.065.92 × 1071.043/1.303[11]
Bi2Te3 nanoplates0.395/1/70[42]
Bi2Te3 nanoplates20.48/700/1480[43]
Bi2Te3 nanoplates4.917.73 × 10914/99[44]
Bi2Te3 thin films5.61.22 × 107262/328This work
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Fu, Z.; Liu, X.; Wang, F.; Du, L.; Sun, W.; Sun, Y.; Song, X.; Zhang, H.; Yao, J. High-Performance Vis–NIR Photodetectors Based on Two-Dimensional Bi2Te3 Thin Film and Applications. Photonics 2024, 11, 1052. https://doi.org/10.3390/photonics11111052

AMA Style

Fu Z, Liu X, Wang F, Du L, Sun W, Sun Y, Song X, Zhang H, Yao J. High-Performance Vis–NIR Photodetectors Based on Two-Dimensional Bi2Te3 Thin Film and Applications. Photonics. 2024; 11(11):1052. https://doi.org/10.3390/photonics11111052

Chicago/Turabian Style

Fu, Zhendong, Xuefang Liu, Fuguo Wang, Langlang Du, Wenbao Sun, Yueyu Sun, Xiaoxian Song, Haiting Zhang, and Jianquan Yao. 2024. "High-Performance Vis–NIR Photodetectors Based on Two-Dimensional Bi2Te3 Thin Film and Applications" Photonics 11, no. 11: 1052. https://doi.org/10.3390/photonics11111052

APA Style

Fu, Z., Liu, X., Wang, F., Du, L., Sun, W., Sun, Y., Song, X., Zhang, H., & Yao, J. (2024). High-Performance Vis–NIR Photodetectors Based on Two-Dimensional Bi2Te3 Thin Film and Applications. Photonics, 11(11), 1052. https://doi.org/10.3390/photonics11111052

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