research-article

Bias temperature instability analysis of FinFET based SRAM cells

Authors:

Praveen Raghavan,

Francky CatthoorAuthors Info & Claims

DATE '14: Proceedings of the conference on Design, Automation & Test in Europe

Article No.: 31, Pages 1 - 6

Published: 24 March 2014 Publication History

Abstract

Bias Temperature Instability (BTI) is posing a major reliability challenge for today's and future semiconductor devices as it degrades their performance. This paper provides a comprehensive BTI impact analysis, in terms of time-dependent degradation, of FinFET based SRAM cell. The evaluation metrics are read Static Noise Margin (SNM), hold SNM and Write Trip Point (WTP); while the aspects investigated include BTI impact dependence on the supply voltage, cell strength, and design styles (6 versus 8 Transistors cell). A comparison between FinFET and planar CMOS based SRAM cells degradation is also covered. The simulation performed on FinFET based cells for 10⁸ seconds of operation under nominal V_dd show that Read SNM degradation is 16.72%, which is 1.17X faster than hold SNM, while WTP improves by 6.82%. In addition, a supply voltage increment of 25% reduces the Read SNM degradation by 40%, while strengthening the cell pull-down transistors by 1.5× reduces the degradation by only 22%. Moreover, the results reveal that 8T cell degrades 1.31× faster than 6T cell, and that FinFET cells are more vulnerable (~ 2×) to BTI degradation than planar CMOS cells.

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Cited By

Guo SWang RYu ZHao PRen PWang YLiao SHuang CGuo TChen AXie JHuang RParameswaran S(2017)Towards reliability-aware circuit design in nanoscale finFET technologyProceedings of the 36th International Conference on Computer-Aided Design10.5555/3199700.3199804(780-785)Online publication date: 13-Nov-2017
https://dl.acm.org/doi/10.5555/3199700.3199804
Kraak DAgbo ITaouil MWeckx PCosemans SCatthoor FHamdioui SDehaene W(2017)Mitigation of sense amplifier degradation using input switchingProceedings of the Conference on Design, Automation & Test in Europe10.5555/3130379.3130583(858-863)Online publication date: 27-Mar-2017
https://dl.acm.org/doi/10.5555/3130379.3130583
Agbo ITaouil MKraak DHamdioui SKukner HWeckx PRaghavan PCatthoor F(2017)Integral Impact of BTI, PVT Variation, and Workload on SRAM Sense AmplifierIEEE Transactions on Very Large Scale Integration (VLSI) Systems10.1109/TVLSI.2016.264361825:4(1444-1454)Online publication date: 1-Apr-2017
https://dl.acm.org/doi/10.1109/TVLSI.2016.2643618
Show More Cited By

Index Terms

Bias temperature instability analysis of FinFET based SRAM cells
1. Hardware

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Information & Contributors

Information

Published In

cover image ACM Other conferences

DATE '14: Proceedings of the conference on Design, Automation & Test in Europe

March 2014

1959 pages

ISBN:9783981537024

General Chairs:
Gerhard Fettweis
TU Dresden, DE
,
Wolfgang Nebel
OFFIS, DE

Sponsors

EDAA: European Design Automation Association
ECSI
EDAC: Electronic Design Automation Consortium
IEEE Council on Electronic Design Automation (CEDA)
The Russian Academy of Sciences: The Russian Academy of Sciences

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SIGDA: ACM Special Interest Group on Design Automation

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European Design and Automation Association

Leuven, Belgium

Publication History

Published: 24 March 2014

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DATE '14

Sponsor:

EDAA
EDAC
The Russian Academy of Sciences

DATE '14: Design, Automation and Test in Europe

March 24 - 28, 2014

Dresden, Germany

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Overall Acceptance Rate 518 of 1,794 submissions, 29%

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Cited By

Guo SWang RYu ZHao PRen PWang YLiao SHuang CGuo TChen AXie JHuang RParameswaran S(2017)Towards reliability-aware circuit design in nanoscale finFET technologyProceedings of the 36th International Conference on Computer-Aided Design10.5555/3199700.3199804(780-785)Online publication date: 13-Nov-2017
https://dl.acm.org/doi/10.5555/3199700.3199804
Kraak DAgbo ITaouil MWeckx PCosemans SCatthoor FHamdioui SDehaene W(2017)Mitigation of sense amplifier degradation using input switchingProceedings of the Conference on Design, Automation & Test in Europe10.5555/3130379.3130583(858-863)Online publication date: 27-Mar-2017
https://dl.acm.org/doi/10.5555/3130379.3130583
Agbo ITaouil MKraak DHamdioui SKukner HWeckx PRaghavan PCatthoor F(2017)Integral Impact of BTI, PVT Variation, and Workload on SRAM Sense AmplifierIEEE Transactions on Very Large Scale Integration (VLSI) Systems10.1109/TVLSI.2016.264361825:4(1444-1454)Online publication date: 1-Apr-2017
https://dl.acm.org/doi/10.1109/TVLSI.2016.2643618
Guo SWang RYu ZHao PRen PWang YLiao SHuang CGuo TChen AXie JHuang R(2017)Towards reliability-aware circuit design in nanoscale FinFET technology: — New-generation aging model and circuit reliability simulator2017 IEEE/ACM International Conference on Computer-Aided Design (ICCAD)10.1109/ICCAD.2017.8203856(780-785)Online publication date: 13-Nov-2017
https://dl.acm.org/doi/10.1109/ICCAD.2017.8203856

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